Method of shaping high-melting and chemically stable materials

FIELD: thermochemical etching.

SUBSTANCE: method comprises etching the surface of articles made of high-melting chemically stable materials by applying the layer of an agent interacting the article material and heating the surface by laser pulse irradiating. The surface of the article is simultaneously affected by the laser pulses and vapors of a volatile composition, which is subjected to the pyrolytic decomposition to produce the above mentioned material. The amplitude of the laser pulse should be sufficient to cause the evaporation of the material.

EFFECT: enhanced adaptability to shaping.

3 cl

 

The invention relates to methods of thermochemical etching chemically resistant refractory materials, in particular to methods of local etching their surfaces, for example, using local laser irradiation.

Known methods of etching chemically resistant refractory material by exposure to accelerated ion flow in the vacuum have drawbacks: the etching rate is small; need for complex vacuum equipment.

As the closest analogue is selected there is a method of profiling products by etching their surfaces for the coating layer interact with matter (US 3095341 from 25.06.1963).

The disadvantage of this method is the complexity of its implementation, due to its multi-stage: first application of the interacting substances, then the selective irradiation, followed by removal of substances. At each stage it is necessary to ensure their optimal conditions for the process.

The objective of the invention to simplify the known method and to extend the profiling process for refractory and chemically resistant materials, such as sapphire, other refractory oxides or carbides.

The solution is achieved by the fact that when profiling products from refractory and chemically resistant material by etching their surfaces is anonymum on the surface layer interacting with them substances when heated, applying a layer of a substance to produce a local effect of the leading edge of the laser pulse irradiation, for which the surface is subjected to the simultaneous action of the laser pulse and the vapors of volatile compounds, pyrolytic decaying with obtaining the specified substances, and the amplitude of the laser pulse is sufficient to vaporize the substance.

In addition, it is also proposed during the etching of refractory and chemically resistant oxide as a layer of a substance to use films of refractory metals or refractory carbides and oxides.

In addition, it is also proposed to periodically reduce the amplitude of the laser pulses to values smaller than necessary for the specified evaporation, and the duration of the period of the modulation amplitude is more than two periods of the sequence of laser pulses.

In addition, it is also proposed to use a substance, a solvent at a temperature of laser irradiation subjected to etching material.

The proposal to produce a coating of the surface layer substances-provide the Etchant through the impact of the leading edge of the laser pulse, for which the surface is subjected to the simultaneous action of the laser pulse and the vapors of volatile compounds, pyrolytic decaying with obtaining the substance-provide the Etchant, and the amplitude of the laser pulse is sufficient for evaporating substances and products of its chemical reaction with the product, POS is s such operations, as the application provide the Etchant, the process of its reaction with the product, removal of provide the Etchant and reaction products to produce in one cycle, during laser irradiation of the product, without requiring separate operations such as spraying reagent in a single installation, the etching in the other, the removal of provide the Etchant in the third.

The decomposition of a volatile compound substance-provide the Etchant occurs during the laser pulse adsorbed on the surface layer of this compound, as well as penetration of molecules of this compound on the already hot surface from the gas phase.

During one laser pulse is alternately applying actively interacting with the surface of the substance and its evaporation together with products interaction

The proposal to use as a layer of a substance-provide the Etchant film of the refractory metal or refractory carbides or oxides of metals allows the etching due to the leakage of high-temperature chemical reaction type.

for the etching of the diamond, or type

for the etching of sapphire.

The proposal to periodically reduce the amplitude of the laser pulses to a value less than necessary for the specified evaporation, and the duration of the period of the modulation amplitude more than two periods of the laser pulse is s, will precipitate on Travessa surface substance layer of a reagent thicker and for a longer time, which increases the efficiency of its interaction with travemate surface and the etching rate. The explanation lies in the fact that during one laser pulse is deposited less than one monolayer of material. In this case, the alternate application of actively interacting with the surface of the substance and its evaporation together with the products of interaction occur during the time equal to the period of the modulation amplitude of the laser pulses.

The value of the period of the modulation amplitude of the laser pulses from small values is physically limited by the duration of two periods of the sequence of laser pulses.

The proposal to use substances, solvent travesia when the temperature of the laser heating of the material, suggests that the removal of surface atoms is introduced into a layer of substance-provide the Etchant by diffusion. By evaporation of the applied layer of the reagent, which occurs explosively, are removed is introduced by diffusion of the atoms of the surface.

Therefore, new proposals achieve set tasks.

Consider the examples of the invention

For etching diamond propose to use Organoelement compounds of iron, Nickel, R the tion, other transition metals (e.g., CARBONYLS Fe(CO)5, Ni(CO)4That Re2(CO)10). Iron and Nickel can dissolve carbon and chemically with him interact with the formation of carbides. You can also use Organoelement compounds and nonmetals: positive results obtained with the silicon compound (C6H5)3SiH.

For the etching of refractory oxides such as sapphire (aluminum oxide), can be used as substances of stain metals titanium, zirconium, molybdenum, tungsten, chromium, and silicon and other substances. Metals pyrolytic landed on travesias surface of the vapor of Organoelement compounds or vapor halide compounds; silicon, as in the case of diamond from the vapor of triphenylsilane.

Used in the experiment laboratory setting allowed visual inspection under the microscope to focus the radiation beam of the nitrogen laser (wavelength 0,334 μm) duration of the laser pulse of 6 NS at the surface of the diamond single crystal. A focused spot was in the form of a square with a side of 10-20 μm. The patch was supplied to the reagent in the form of steam and gas jets (pair of triphenylsilane in nitrogen).

The diamond was kept at a temperature close to the room. The power density in the laser spot was 5·107W/cm2. On the surface almasevilla film, as expected, pure or partially oxidized silicon (sediment color brown, this color in thin layers have these substances). With increasing laser power the film was evaporated, leaving a depression in the diamond. The etching rate of the diamond was equal to 1 μm/min and during the optimization process, undoubtedly, may be increased.

Examples of the invention demonstrate the attainability of its stated goals.

Industrial application of the method will be as a way of engraving pattern on the surface of a solid chemically resistant materials, in particular diamond; diamond profiling or received from refractory and chemically resistant materials of films and substrates (getting a microrelief in microelectronic production).

1. Method profiling products from refractory and chemically resistant material by etching their surfaces for the coating layer interacting with them substances when heated, wherein applying a layer of a substance to produce a local effect of the leading edge of the laser pulse irradiation, for which the surface is subjected to the simultaneous action of the laser pulse and the vapors of volatile compounds, pyrolytic decaying with obtaining the specified substances, and the amplitude of the laser pulse is sufficient the La evaporation of the substance.

2. The method according to claim 1, characterized in that the etching of refractory and chemically resistant oxide as a layer of substance use films of refractory metals or refractory carbides and oxides.

3. The method according to claim 1 or 2, characterized in that the periodically reduce the amplitude of the laser pulses to values smaller than necessary for the specified evaporation, and the duration of the period of the modulation amplitude is more than two periods of the sequence of laser pulses.

4. The method according to claim 1, characterized in that the used substance, a solvent at a temperature of laser irradiation subjected to etching material.



 

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FIELD: semiconductor engineering; manufacture of extremely thin semiconductor structures and diaphragms.

SUBSTANCE: proposed method includes sticking of wafers and locking plates on faceplate using hold-down devices and separate mechanical treatment of plate and wafer surfaces to attain their desired definite thickness; faceplate is provided with at least two areas for sticking wafers and plates separated by blind slots; stuck to one of these areas are plates made of material whose hardness is greater than that of semiconductor wafer material; locking plates are mechanically finished and semiconductor wafers are stuck to free area of faceplate without changing position of pre-treated locking plates on faceplate. Adhesive used for sticking locking plates has melting point higher by at least 15 - 20 °C than that of adhesive employed for sticking semiconductor wafers. Locking plates are stuck using hold-down device independent of that used for semiconductor wafers.

EFFECT: enhanced quality and precision of treatment of semiconductor wafers.

3 cl, 4 dwg

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FIELD: thermochemical etching.

SUBSTANCE: method comprises etching the surface of articles made of high-melting chemically stable materials by applying the layer of an agent interacting the article material and heating the surface by laser pulse irradiating. The surface of the article is simultaneously affected by the laser pulses and vapors of a volatile composition, which is subjected to the pyrolytic decomposition to produce the above mentioned material. The amplitude of the laser pulse should be sufficient to cause the evaporation of the material.

EFFECT: enhanced adaptability to shaping.

3 cl

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