Device for noise suppression in the signal ac power
The invention relates to electrical engineering. The element ta PN-junction, which works on the effects of Peltier and Seebeck and contributes to reduce the noise effect, which prevents the harmful effects of white noise contained in the fluctuation of the AC power supply from the commercial power source AC, or spurious noise or similar noise caused by electromagnetic interference in a given electromagnetic device, which is characterized by its efficiency when mounted on the stage of design or workmanship in each low power functional circuit that adapts the unit with the specified element made in the form of an element of the device or as a stand-alone unit, to a high-power circuit. A self-contained unit designed by separating at least one of the lines supplied to the electromagnetic device between the input output I of the AC supply and the output pin O on parallel branches a and b and connect the serial connection of the diodes da, db and element ta, tb PN-transition to each branch, which ensures the achievement of the technical result is ease of use. 6 C.p. f-crystals, 7 ill., 1 PL.the food and prevents the harmful effects from blending for example white noise or spurious wave noise caused by EMF interference, on the oscillation of the alternating current, which should be sinusoidal oscillation supplied, for example, from commercially available power source AC voltage of 100 V for electromagnetic devices (including electronic devices). More specifically, the invention relates to a device, which in General case can be used in any electronic device that is connected to the power input circuit that is not a member separate functional circuits of the electrical appliance.Prior artTraditionally used filters or similar devices that are configured to a specific frequency defined by the time constant L, C and R, and forming a separate functional circuits to ground or performing the function of the current element.However, in the conventional device of this type through the use of capacitive or inductive impedance signal corresponding frequency cannot be suppressed and unable to suppress the effect on all frequency bands, and the negative influence of electromagnetic noise interference can be ruled out only partially. In relation to white noise satisfactory financial p is their image or color when using video and so on, caused by noise or omegawiki fluctuations with non-specific and unstable frequency spectrum from the source of AC power.Besides, in the electromagnetic devices in addition to the coils has a large number of connected or built-in electric, electronic items, such as transformers, resistors, capacitors, semiconductor devices. Output current, comprising the above-mentioned noise standing wave, also called such electrical characteristics inductance, conductance, capacitance, etc., inherent in these elements, and such properties of materials, such as thermal noise or electron scattering. Due to the interference of the noise standing wave current, especially near zero current, there is a noise with even higher energy.Since the noise standing wave overlap the normal output signal, which should be essentially similar to the input signal, the input signal is virtually impossible to convert. Noise in electromagnetic devices make the conversion of the input signals into audio signals, image signals, write data, etc., imprecise and unclear, resulting in lost scientific and artistic value of Padova the Denmark devices which can be easily integrated into electromagnetic equipment of the end user, by simply plugging it to the power input circuit.Disclosure of the inventionThe author of this invention is one of the patentees of inventions, the Japan patent No. 2731456. Paying attention to improve the quality of the sound characteristics of the element with the PN-transition (thermal module), which is connected to each of the functional circuits in low power circuits", which is associated with the invention, means for solving the above problems is provided in the General case by applying these characteristics to the supply chains of high-power circuits".The specified element with a PN junction, which creates a temperature difference by means of the Peltier effect and produces thermoelectric current through the Seebeck effect, is explained below with reference paragraph 1 of the claims of the above-mentioned patent.Fig.6 shows an improved element 61 to the signal fluctuations of the electromagnetic circuit containing a transitional pair with section 62 of semiconductor material is P-type and section 63 of the semiconductor N-type material having thermoelectric properties in the passage 64 and the electrode sections 65 and 66 of the material is translated to produce the Peltier effect and the Seebeck effect in one and the same element and to suppress the reverse current electromagnetic induction, causes the noise standing wave, due to the fact that the exothermic Peltier effect occurs at the transition 64, and an endothermic Peltier effect occurs on both electrode sections 65 and 66, which allows due to the presence of transition differenceTt temperature resulting from the exothermic and endothermic effects, to develop a transitional protivoelektrodvizhushchej force of the first polarity between the passage 64 and the two electrode sections 65 and 66 due to the Seebeck effect, when the current flows in the first direction between the section 62 of semiconductor material is P-type and section 63 of the semiconductor material is N-type, and to develop protivoelektrodvizhushchej force opposite, second polarity between the two electrode sections 65 and 66 by inverting the above-mentioned transition differenceTd, when the current flows in a second direction opposite the first direction.Brief description of drawingsFig.1 depicts a block diagram of a circuit illustrating the first embodiment of the device according to the present invention.Fig.2 depicts a block diagram of a circuit illustrating a second embodiment of the device according to the device, according to the present invention.Fig.4 depicts a block diagram of a circuit illustrating the fourth embodiment of the device according to the present invention.Fig.5 (a) depicts a circuit containing a power outlet with an extension cord, and (b) depicts a circuit containing a power outlet type inserts designed for direct insertion into the wall socket.Fig.6 illustrates the execution of eliminating the noise element of the present invention, in particular, (a) shows the device with soldered bulk materials, (b) with soldered thin - and thick-film materials, (C) surround materials, soldered in the form of the letter P with a transition metal strip, and with the element of modular type with many elements connected in series.Fig.7 illustrates a sawtooth oscillations, in particular, (a) normal sawtooth oscillation, and (b) irregular sawtooth oscillation, covered by the noise of the standing wave.The best option of carrying out the inventionThe above improves the sound quality element 61 with a PN-transition, shown in Fig.6, contains a couple of transitional material 62 p-type and material 63 of n-type conductivity, and conclusions 67 and 68 accession the respective boundary layers transition. Fig.6 (a) shows improves the sound element with three-dimensional materials forming the junction. Fig.6 (b) shows improves the sound element with thin-film or thick-film materials forming the junction. Fig.6 (C) shows improves the sound element with three-dimensional materials that are connected in the form of the letter P with the connecting metal strips 69.Assuming that the absolute thermoelectric power of the material of the P-type isR, and the absolute thermoelectric power (Seebeck) of N-type material isN, the relative thermoelectric powerR transition of the pair of both materials is defined as the difference between the absolute thermopower of both materials (R-N). When current flows through the elements 61 PN-transition, shown in Fig.6, for example, from the material P-type 62 to the N-type material 63, the exothermic effect PeltierRIT, is proportional to the relative SeebeckR=R-N element 61, the current I and the absolute temperature T of the transition Cu)IT and (Cu-N)IT, is proportional to the relative thermoelectric powerR element 61, the current I and the absolute temperature T of the electrode sections 65 and 66, occur on both electrode sections 65 and 66, so that the total value of these endothermic effects Peltier becomesRIT. the result is that the transition temperature of 64 rises, and the temperature of both electrode sections 65 and 66 decreases, thereby creating a differenceT temperatures between passage 64 and the electrode sections 65 and 66 (temperature sections 65 and 66 are the same). This differenceT temperature unstable changes due to influence Dzhoulevo warmth I2R allocated to the electric resistance R of the element, and heat transfer ToT caused by thermal conductivity K, which is the inverse of thermal resistance.However, in relation to a sudden current change, the impact Dzhoulevo warmth and heat transfer is extremely low, and the temperature differenceTt=Th-TC temperatures.The specified generated transition differenceTt temperature provides the transitional proteoidsRT, is proportional to the relative SeebeckR element between the passage 64 and the two electrode sections 65 and 66 due to the Seebeck effect. When a transient current flows to the N-type material 63 from the material P-type 62, the electrode 65 has a positive polarity, and the electrode 66 has a negative polarity. When the current in the element current changes direction, the transition temperature, the temperature of both electrode sections and the polarity of the electrodes change the sign.As indicated endothermic and exothermic effects Peltier, proteoids Seebeck arise due to the high velocity of the electrons in the boundary layers transition between passage 64 and the two electrode sections 65 and 66 of the element, they occur in the vicinity of zero znacenje electromagnetic device, changes dramatically, resulting in a quickly suppressed the reverse current electromagnetic induction generates noise standing wave and supports the output signal of the normal form, which gives a positive effect.As materials of different conductivity types, seen from the table, including metals and compounds, which were measured thermoelectric power and which is shown in the form of a series of thermoelectric facilities for their levels, use materials with large positive and negative absolute values of thermopower. In this sense, as material is preferable to choose thermoelectric semiconductor material. Due to its large absolute thermopowerlarge conductivityand low thermal conductivity To the subject in the use temperature range, great effects generate a differenceT1temperature and development protivoelektrodvizhushchej forcesT for the same current. The value of z=2in the General case is a measure of the quality of a thermoelectric material, and the element with wclause sound.More specifically, examples of materials for use as elements identified as improving the sound, are currently based materialsbismuth-tellurium, which have a high rate z quality at a temperature close to the room.One example of a material of the p-type is (Sb2The3)And(Bi2The3)B(Sb2Se3)Cwhere Those added as a donor to A=70-72,=23-27 and C=3-5. One of the examples of n-type material is (Bi2The3)D(Sb2The3)E(Bi2Se3)Fwhere metal-halide compound, such SbI3or HgBr2added as a donor to D=90-98, E=0-50 and F=2-5.Fig.7 illustrates the above-mentioned element with the PN junction consisting of the above materials are used, for example, for horizontal and vertical deflection in television. Fig.7(a) shows the normal sawtooth oscillation, and (b) irregular sawtooth oscillation, overlaid with the noise standing wave. The latter degrades the quality of images sequentially connected to the circuit element with the PN-junction can provide the effect of returning this th is served to users of the Tokyo power company, changes its direction of flow every 1/100 of a second. Because electrons have mass and inertia, the flow of electrons, forming this current may not be adequate to such change of direction every 1/100 of a second (not may stop suddenly), and the electrons collide with each other and move in a chaotic state. This state corresponds to white noise.The present invention is particularly important in preventing collisions of the electrons with each other in chaotic motion of electrons and uses noise reduction element, which is characterized by the fact that "produces a temperature difference by means of the Peltier effect and produces thermoelectric current through the Seebeck effect" to achieve the above purpose, without affecting the internal structure of a display device of the image, for example, TV, etc. when connected to a source of AC power.Although this invention can be used in multi-phase circuit AC power, for example, three-phase circuit AC power below as an example implementation will be described single-phase circuit AC power 100 C. While Japan uses variable is OECS supply voltage or a voltage of 220 or above in foreign countries. If the circuit is designed with regard to the breakdown voltage, the upper limit voltage is not, and can cope with high voltage circuit power distribution or ultra-high voltage transmission circuit. You can change the design, to adapt the invention to the currents of great strength or high power by selecting the current capacity of the diode element PN junction in accordance with the target values.In the basic circuit shown in Fig.1, the two lines L and R (this example is taken for single-phase alternating current, in the case of three-phase alternating current three lines) between the input (I) and output (O), AC split on each branch a and branch b, connected in parallel, and branch and forms a chain C-a-da-ta-D direct current, which is formed by the serial connection of the diode to the element da ta PN junction, and may cause the Peltier effect and the Seebeck effect in one and the same element, while branch b forms a chain C-b-db-tb-D reverse current, which is a serial connection of the diode db to the element tb PN-junction. That is, the direction of the inclusion of the element ta PN-junction in the line and is selected so that the transition will be cooled, when the direct current rectified by the diode da, flows in the element with the PN-transition is when using such a device, the pulsating current due to half-wave rectification flows in the element ta PN-transition in this direction, and the transition is cooled by the Peltier effect, with the formation of a temperature difference, which is due to the Seebeck effect turns the device into a heat generator for converting containing the noise current of the input signal from the input side in the flow of thermal electrons, which in turn must be provided.Although Fig.1 shows a state in which two lines L and R is divided into two branches a and b for the formation of series-connected circuits of diodes and elements of PN-junctions, only one of these two lines L or R can be divided into branches, and the rest of the line remains in the normal state (i.e., the above-mentioned series circuit are not formed).Fig.2 shows the introduction of a PN-transition on the output side of the circuit according to Fig.1 in the form of a connecting loop-back direction of the NP, and the transition of one of the two elements becomes cold while the other becomes heated, and thermal cell by a short circuit, so that the loop produces a high current. Current loop transfers the electrons in accordance with a change in the load device, which is connected to the OUTPUT, and grounded. Odom, also introduced before the diode circuit according to Fig.2 or on its input side. In the experiment with a TV set with a 37-inch screen, the picture quality and sound increased when using the circuit of Fig.1. The circuit according to Fig.2 additionally improved the quality of these parameters compared with the circuit of Fig.1, a circuit according to Fig.3 improved the quality even more. Introduction loop noise suppressing element, a counter connected to the I line, as in Fig.4, led to a further improvement.Fig.6 represents an item in an enlarged scale, and the actual dimensions of the item significantly less. For example, the dimensions (heightdepthlength) element with a current capacity of 10 amps is 2 mm2 mm3 mm, dimensions of the same element with a current capacity of 50 amps is 5 mm5 mm3 mm, the cross-sectional area is approximately proportional to the intensity of the flow, and the length is about 3 mmFig.5(a) shows an example of executing the outlet 51 with the extension and provided with a plug cord 52, and Fig.5 (b) shows an example of executing the outlet slot 54 with a plug 53 for inserting in the crust is I for the electronic device, such as audio or video equipment connected to AC power. The electric circuit shown in Fig.1-3, are embedded in the case shown in Fig.5.In other embodiments, for example, the circuit can be designed with the option of switching between a single line and a single output current limiter, for example, in a box of fuses or can be constructed with shapes and sizes that are consistent with the parameters of a fuse used in a box of fuses, and may be replaced with a fuse.Industrial applicabilityIt is known that the element with the PN-transition, producing the Peltier effect and the Seebeck effect in one and the same element may, at its core, to provide special noise-canceling effect when connecting at the design stage or at the stage of manufacturing to the functional circuit like circuit excretion speech signal or chain excretion videos.It is known that the introduction of the above-mentioned element with the PN junction in the scheme of deviation horizontally or vertically in the receiver shown, for example, in Fig.7, can provide the effect of return is not the 7 (b), and degrades the image quality to normal sawtooth appearance (a).However, because the device is designed as a stand-alone unit that can select easily connect the user between the electromagnetic device in which it was not provided, and the source of the AC power supply AC power, for example, to the receiver through the specified device can significantly improve the quality of picture and sound and make them more natural. I.e., by eliminating noise-like vortex flow generated by a source of AC power, you can significantly weaken fluorescent colors and static on the television screen and better sound quality.As the circuit design is becoming more complex from those shown in Fig.1 shown in Fig.4, the effects of more and more increasing. The video, produced on a television screen, which is noticeable when using the claimed device may include:(1) Video in natural light (water, mountains, grass and flowers).(2) a Human face.(3) sports, different povyshennogo previous).(6) the films demonstrated using the VCR.
Claims1. Device for suppressing noise in a signal is AC power connected between the source of AC power and the input power of the electromagnetic device of alternating current, characterized in that at least one of the lines of individual phases (e.g., L or R) power source AC is divided into branch a and branch b, connected in parallel, each parallel-connected branches a and b is arranged to form a serial circuit of the element ta and tb, respectively, with the PN junction functioning on the basis of the effects of Peltier and Seebeck, and diode d, moreover, the parallel connected branches a and b connected to the node C and E on the input side and to the node D or F on the output side, forming a loop circulating current, input output AC current (I) supplied by the input connector in the form of a connecting plug or connector plug the power cord and output AC (O) is supplied with the output connector, made in the form of a socket or outlet with an extension cord.2. The device under item 1, characterized in that the elements ta2 and tb2 with PN-p is correctly connected branches a and b on the output side and the output pin AC (O).3. The device according to p. 2, characterized in that the element ta3 PN junction connected in series in the forward direction between the anode of the diode, located on the input side of each branch and the input and output AC (I), and an element with tb3 PN junction connected in series in the reverse direction between the cathode of the diode, located on the input side of each branch b and the input output AC (I).4. The device according to p. 3, characterized in that the elements ta4 and tb4 PN junction connected in opposite parallel to each other and connected in series between node G or N parallel-connected branches a and b on the input side elements ta3 and tb3 PN-transition input output AC (I).5. Device according to any one of paragraphs.1-4, characterized in that the circuit from input to output at least one of the lines of individual phases of the source of AC power to output the output is placed in an electrically insulated housing.6. Device according to any one of paragraphs.1-4, characterized in that, in the case of use as a power supply three-phase AC input line for the mentioned alternating current made of three lines and current patterns of each line.7. Device according to any one of abeka, used advanced element 61 for electromagnetic waves containing transition pair with section 62 of semiconductor material is P-type and section 63 of the semiconductor material is N-type, connected with the possibility of generating thermoelectric power, on the transition 64, and the electrode sections 65 and 66 of materials with opposite properties on opposite sides of said transition, and the effects of Peltier and Seebeck in the specified element 61 arise due to the fact that the exothermic Peltier effect occurs on passage 64, and an endothermic Peltier effect occurs on both electrode sections 65 and 66, what transition the differenceTt temperatures arising due to the aforementioned exothermic and endothermic effects, promotes generation of transition protivoelektrodvizhushchej force of the first polarity between the passage 64 and the two electrode sections 65 and 66 due to the Seebeck effect, when the current flows in the first direction between the section 62 of semiconductor material is P-type and section 63 of the semiconductor material is N-type, and generating protivoelektrodvizhushchej force opposite, second polarity between the two electrode sections 65 and 66 protivopoloznom first.
FIELD: mechanical design of thermoelectric batteries.
SUBSTANCE: proposed thermoelectric battery has alternating p and n semiconductor branches connected in series to set up electric circuit by means of switching plates. Branches are electrically interconnected by bringing in contact p branch, switching plate, and n branch, where p branch contacts one of surfaces of switching plate through its end surface and n branch contacts its other surface. Each branch contacts two switching plates through its opposing end surfaces. Surface area of switching plates is slightly larger than cross-sectional area of p and n branches so that their ends protrude beyond surface of structure formed by thermoelectric battery branches. Ends of odd-numbered switching plates protrude beyond one surface of structure and those of even-numbered switching plates, beyond other surface. Ends of switching plates contact electrically isolated pads made in the form of metal or alloy films covering ceramic plates. Space confined between ceramic plates and surface of structure formed by thermoelectric battery branches is filled with heat insulation.
EFFECT: reduced heat load on switching plates, facilitated connection of the latter to cooled parts and heat dump system.
1 cl, 2 dwg
FIELD: thermoelectric instrumentation engineering; thermoelectric batteries.
SUBSTANCE: proposed thermoelectric battery has semiconductor thermal cells connected in series-to form electric circuit by means of switching plates. Electrical connection of circuit branches is made by contacting p branch, switching plate, and n branch. These p and n branches are brought in contact through their end surfaces with two respective opposing surfaces. Surface area of switching plates is slightly greater than cross-sectional area of p and n branches so that some of their ends are protruding beyond surface structure formed by thermoelectric battery branches. Odd-numbered switching plates protrude beyond one surface of structure and even-numbered ones, beyond other surface. Protruding parts of switching plates are covered with shielding layer made of insulating material of high thermal conductivity. Surface ratio of protruding parts of even- and odd-numbered switching plates is found from equation
where S2, S1, α1, α2, T2, T1, are surface areas, coefficients of heat transfer between surfaces and their surrounding media, and averaged temperatures of protruding ends of even- and odd-numbered switching plates, respectively; Ta is ambient temperature; ε is refrigerating factor for thermoelectric battery running as refrigerator or for that running as thermogenerator.
EFFECT: eliminated risk of in-service electric shock, facilitated heat transfer between switching plates and cooled part, as well as between the former and heat dump.
1 cl, 2 dwg
FIELD: thermoelectric instrumentation engineering.
SUBSTANCE: semiconductor thermal cells, each made of two branches of p and n semiconductors, respectively, are interconnected into electric circuit by means of switching wafers. Butt-to-butt switching of thermal cell branches is effected at one end of each switching wafer. Heat transfer from and heat supply to switching wafers is made from their all free surfaces through sectional areas. Ratio of sectional areas of heat-supply and heat-transfer switching wafers is found from equation S1/S2 = 1 ε/1 + γβ, where S1, S2 are sectional areas of heat-supply and heat-transfer wafers, respectively; ε, γ, β are coefficients of thermoelectric battery energy conversion, length ratio of free parts of switching wafers, and ratio of temperature drop across thermal cells and switching wafers with heat-supply and heat-transfer media, respectively.
EFFECT: enhanced operating efficiency of thermoelectric battery.
1 cl, 1 dwg
FIELD: thermoelectric instrumentation engineering; thermoelectric battery mechanical design.
SUBSTANCE: proposed thermoelectric battery has series-connected thermal cells, each being assembled of two p and n semiconductor legs, respectively. These legs are linearly disposed. Switching members are made in the form of flexible insulating heat conductors or copper buses with contact pads at ends made of electricity conducting material. First contact pads are connected on both ends with p and n semiconductor legs. Second contact pads are connected to mutually insulated pads made in the form of metal or alloy strips covering ceramic heat-transfer wafers or in the form of copper wafers soldered onto insulated film contacts of ceramic wafers. All even-numbered switching wafers are connected to one heat-transfer wafer and odd-numbered ones, to other heat-transfer wafer.
EFFECT: facilitated battery connection to objects being cooled (heated) or to heat source and heat dump system at hard-to-get-at places.
1 cl, 1 dwg
FIELD: thermoelectric battery mechanical design.
SUBSTANCE: proposed thermoelectric battery has semiconductor thermal cells connected in series to form electric circuit by means of switching wafers, each cell being formed by two p and n semiconductor legs, respectively. Legs are electrically interconnected through circuit set up of p switching wafer, n leg, where p leg comes in contact through butt-end surface with one of switching wafer surfaces and n leg, with other surface. Each leg contacts two opposing switching wafers through butt-end surfaces. Switching wafers have through holes. Holes made in even- and odd-numbered switching wafers are made in mutually perpendicular planes. Holes of all odd-numbered switching wafers are joined in tandem by means of insulating pipelines to form single channel that carries coolant when thermoelectric battery is operating. Holes of all even-numbered switching wafers are joined in tandem in the same manner to form second channel. Thermoelectric battery and pipelines are provided with heat insulation isolating them from environment.
EFFECT: enhanced temperature differential between cool and hot coolants.
1 cl, 1 dwg