A rewritable optical information medium

 

The invention relates to the accumulation of information. A rewritable optical information medium for recording by the laser beam includes a substrate and a set of layers that includes the first and second layers of a carbide, a recording layer made of a material with a phase transition, which is placed between layers of carbide, the first dielectric layer that is positioned between the substrate and the first layer of a carbide, a light absorbing layer made of material such as Si, Ge, Mo or W, which is placed between the second layer of carbide and one selected layer of the metal mirror layer and the second dielectric layer. This provides greater absorption of laser radiation in the recording layer in the crystalline state, compared to the absorption in the amorphous state. The crystalline portion of the recording layer is heated to a higher temperature than that of the amorphous marks that you want to erase, so amorphous marks can be at the crystallization temperature for a longer period, using a fixed or a smaller period of irradiation of the laser beam. This allows you keep a steady full time erasing (crystallization) to increase the write speed lnformatzionnoj medium for rewritable recording by means of a laser beam, this environment includes a substrate bearing a set of layers; and the collection contains the first and second layers of a carbide, a recording layer made of a material with a phase transition, which is placed between the layers of carbide, the material with a phase transition allows recording of amorphous bits when it is in the crystalline state, and the first dielectric layer that is placed between the substrate and the first layer of carbide.

The invention also relates to the use of such optical medium for recording high density information storage and applications with a high data transfer rate.

Very attractive is the storage of optical information or data on the basis of the principle of the phase transition, as it combines the functionality of a direct overwrite (PP) and high density storage with easy compatibility with systems read-only. Optical recording basic transition involves the formation of amorphous marks record with submicron size in a thin crystalline film using a focused laser beam. During information recording medium is moved relative to the focused laser beam, which is modulated in accordance with and the quick cooling, which causes the formation of amorphous information bits in the irradiated areas of the recording layer, which remains crystalline in non-irradiated areas. Erasing the recorded amorphous marks by using recrystallization during heat treatment by the same laser. Amorphous marks represent data bits that can be played directly through the substrate using a low-power focused laser beam. The difference in the reflectance of the amorphous marks with respect to the crystalline recording layer allows to obtain a modulated laser beam, which is subsequently converted using the detector in a modulated photo libraries in accordance with the encoded recorded digital information.

The main problems in high-speed optical recording phase transition related to the fact that it is necessary to have a large number of rewritings (the ability to overwrite), i.e. the number of re-entries (depreciation), and erase (recrystallization) and the correct rate of crystallization. In particular, the high rate of crystallization is required when recording with high density and high speed data transfer, the I of crystallization (full time erase (PVA)) must be less than 50 NS. If the crystallization rate is not high enough to match the line speed of the medium relative to the laser beam, the old data (amorphous marks) previous record cannot be completely eliminated (recrystallized) during PP. This leads to high noise levels.

The type of the optical information medium, specified in the first paragraph, is described in the unpublished patent application WO-98/28738 (PHN 16184) filed by applicants. Describes the type environment with the phase transition provides a substrate bearing a layer set, containing the first dielectric layer, e.g. (ZnS)80(SiO2)20recording layer of a phase transition, such as a GeSbTe compound, and the recording layer is located between two relatively thin layers of carbide, such as SiC, the second dielectric layer and a reflective layer. This set of alternating layers can be considered as the structure of I1I+PI+I2M, where M is a reflective or mirror layer, I1or I2the first and second dielectric layers, respectively, of the I+the carbide layer and the P - recording layer of the phase transition. For such a set of reported value PVA 25-30 NS. Is PVA 28 does not match the bit rate paavai for additional service information, that is, data that is used for addressing codes and bug fixes.

A higher value SPPD requires a shorter PVA, for example SPPD 50 Mbit/s PVS requires 20 NS. However, in practice it is difficult to obtain such short PVS.

The objective of the invention is to perform, among other things, a rewritable optical information medium, which is suitable for high-speed optical recording, such as PUD-ROM, rewritable DVD and CVUS and optical film having SPPD more than 35 Mbps, 50 Mbps, without the need to reduce the PVA. Under high write speed in this context should be understood linear velocity of the medium relative to the laser beam to at least 7.2 m/s, for example 18.3 m/s, which is above fifteen times the speed corresponding to the standard CD-ROM drives. Shake environment should be low, constant level. In addition, the environment must have good ability to overwrite.

These objectives are achieved according to the invention using the optical information medium, as described in the first paragraph, in which the light-absorbing layer is placed between the second layer of carbide and a metal mirror layer and/or the second dielektricheskom condition, than in the amorphous state. In optical media for recording, as described in the prior art, such as the environment, which sets the structure IPIM, the fraction of laser energy absorbed in the recording layer in the crystalline state (Awith), less than in the amorphous state (Aand). Discovered that if you add a light absorbing layer so that at the same timewithit was above Andandit is possible to get a higher data rate. When awith>Andandthe crystalline portion of the recording layer is heated to a temperature higher than that of amorphous marks, that is, when the recording layer is irradiated with laser radiation with a given pulse duration (exposure time). To erase the amorphous mark needed to maintain the temperature above the crystallization temperature Txduring the time t, which is at least equal to the value of PVA. Because the original crystalline medium will be heated to higher temperatures than amorphous character, which should be washed, heat will be transmitted to the sign, resulting sign will be cooled with a lower speed (slow cooling structure of the disk) and will remain above Txduring the course Itsa at temperatures above Txduring the time t, is equal to or more than the PVS using the same exposure time. When there is a disk structure with a light-absorbing layer according to the invention, achieves a higher data rate without reducing the PVA. In contrast, the set in which Andwithless than Aandwill be quick cooling structure of the disc, i.e. the initial crystalline environment will have a lower temperature than the amorphous mark. Then heat will be transferred from the sign in the original crystalline environment. With the same exposure time and the power of time t, during which the sign is at a temperature above Txwill be less than PVA, but it will not be erased completely amorphous mark.

The optical information medium according to the invention, can be set with the following structure: I1I+PI+AM (Fig.2) or I1I+PI+AI2(Fig.3), where a is the light-absorbing layer and the I1and I2I+, R and M have the above meanings. Preferred is a structure in which there is a second dielectric layer (I2and M; I1I+PI+I2AM (Fig.5) or I1I+PI+

Preferred are the sets in which the third dielectric layer I3is placed between the light-absorbing layer and the second layer of carbide. This third dielectric layer can be used to optimize thermal properties of the set and to prevent fusion between the second carbide layer and a light absorbing layer. These sets have the structure I1I+PI+I3AI2M (Fig.4) and I1I+PI+I3AI2(Fig.6).

In a preferred embodiment, the material for the light-absorbing layer has a ratio n/k from 0.5 to 20, preferably from 0.6 to 16, where n is the refractive index and k is the attenuation coefficient. These values provide the right balance between absorption and transmission of light. Examples of materials that satisfy these conditions are metals selected from the group consisting of Mo, W, Pd, Pt, Co, Ni, Mn, TA, Cr, Ti and Hf, and semiconductor materials selected from the group consisting of Pbs, Ge, InP, and Si. Preferred are Si and Ge, as they are cheap and simple to use.

The first and second layers of carbide, located on two sides of the recording layer made of a transparent material having a high enthalpy of images is okih the temperature record. Set environment to write subjected to thermal shock, i.e. sudden increase and decrease in temperature during recording, which will limit the ability to overwrite. In particular, the chemical decomposition at high temperature dielectric layers adjacent to the recording layer, and the diffusion of atoms in the recording layer affect the recording layer, resulting in deterioration in the quality of the recorded marks. This deficiency results in a lesser degree in the case where the layers adjacent to the recording layer, are carbides. Thus, a layer of carbide provides a very high ability to overwrite. In addition, the carbide layer allows to obtain a high crystallization rate of the recording layer while maintaining the power of the recording laser beam at a relatively low level. The layer of carbide must be combined with a dielectric layer of a different material, in this case, the first dielectric layer, as it is impossible to obtain the necessary thermal properties of the set with a single carbide layer between the recording layer and the substrate.

The carbide layer of a carbide of an element preferably from the group Si, ZrC, TaC, TiC, WC, which combine excellent R & d ability is pricescom, mechanical and thermal properties, as well as its relatively low price.

First, second and third dielectric layers are preferably made of a mixture of ZnS and SiO2for example, (ZnS)80(SiO2)20. Layers can also be executed from the SiO2, TiO2, ZnS, Si3N4, AlN and TA2O5.

For the metal mirror layer can be used metals such as Al, Ti, Au, Ni, cu, Ag, Rh, Pt, Pd, Ni, Co, Mn and Cr, and alloys of these metals. Examples of suitable alloys are AlTi, AlCr and AlTa.

The recording layer preferably contains a compound GeSbTe. Particularly useful are the compounds described in the international patent application WO 97/50084 (PHN 15881) filed by applicants. These compounds have the composition specified in atomic percent concentration, expressed by the formula CE50xSb40-40xTA60-10xwhere 0,166x0,444. These structures are located on the line connecting compounds GeTe and Sb2Te3in the triangular diagram of the composition of Ge-Sb-Te and include stoichiometric compounds, GE2Se2Te5(x=0,445), GSb2Te4(x=0,286) and GSb4Te7(x=0,166). These compounds show a low value of the PVA.

Other predpochtitel is I. These compounds have a composition defined by the region of the ternary diagram of the composition of Ge-Sb-Te, in atomic percent concentration, and the region has a pentagonal shape with the following vertices:

Ge14,2Sb25,8Te60,0(P)

Ge12,7Sb27,3The60,0(Q)

Ge13,4Sb29,2Te57,4(R)

Ge15,1Sb27,8Te57,1(S)

Ge13,2Sb26,4Te60,4(T)

With these connections you can reach the value of IPOs below 50 NS. Other preferred compounds have the structure

(GeSb2Te4)1-xTex,

where the molar fraction of x satisfies the inequality 0,01x0,37. These structures are located on a line connecting the GeSb2Te4and Those on the diagram of the ternary composition, but within the pentagonal area PQRST. With these connections you can get the values of the PVA is less than 45 NS.

Adding oxygen up to 3.5 atom.% in the above-mentioned compounds of Ge-Sb-Te get even lower values of PVS.

The crystallization rate and the value of the above-mentioned PVA GeSbTe compounds depend on the thickness of the recording layer. Full time erase PVA is defined as the minimum duration of the laser pulse to erase fully the layer is increased up to 10 nm. When the recording layer has a thickness of more than 25 nm, PVA essentially depends on the thickness. The thickness of the above 35 nm adversely affects the ability to overwrite the environment. The ability to overwrite the environment is measured by the relative change of optical contrast after a large number of cycles of PP, such as 105. In each cycle recorded amorphous bits are erased when the recrystallization by heating with a laser beam when recording new amorphous marks. In the ideal case, the optical contrast remains unchanged after a series of rewriting. The ability to overwrite is almost constant up to the thickness of the recording layer 35 nm. In the United requirements that apply to PVS and the ability of rewriting, the thickness of the recording layer is in the range of 10 and 35 nm, preferably between 20 and 35 nm, and more preferably within 25 and 35 nm. Medium which has a recording layer within 25 and 35 nm, has a constant low jitter during the first 105cycles PP. The presence of carbide layers on both sides of the recording layer, causes the dependence of the thickness of the PVA to shift in a more subtle layers. The value of saturation PVA then shifts to 25-30 NS.

The distance between the ethe wavelength of the laser radiation and n is the equivalent refractive index layer between the substrate and the recording layer. The equivalent refractive index is used in the case when the dielectric layers have different refractive indices. Distance equal to the total thickness of the dielectric layer located between the substrate and the recording layer, and includes the thickness of the first dielectric layer and the first layer of carbide. If the distance is less than 70 nm, the ability to overwrite significantly reduced. At a distance of more than 70+/(2n) nm does not increase the ability to overwrite, moreover, turns out to be unfavorable influence on the optical contrast and becomes more expensive manufacturing process. If, for example, the wavelength of 630 nm and the refractive index is 1.5, the range of values of thickness extends from 70 nm to 280 nm.

The distance between the recording layer and the metal mirror layer is at least 20 nm. This distance is equal to the total thickness of the dielectric layers located between the recording layer and the metal mirror layer, and includes the thickness of the second layer of carbide, the second dielectric layer, t is Eskom small thermal insulation between the recording layer and the metal mirror layer is adversely affected. As a result, the cooling rate of the recording layer is increased and, hence, is undesirable increase in the power account. The cooling rate will decrease if you increase this distance.

The thickness of the light-absorbing layer is between 5 and 100 nm in order to have the right balance between absorption and transmission of light, and depends on the ratio n/k of the selected material. For example, for a Si thickness of approximately 65 nm, whereas for W and Mo thickness is 40 nm.

The thickness of the first and second carbide layer is preferably between 2 and 8 nm. The relatively high conductivity of the carbide will have only a small effect on set when this thickness is small, thus facilitating thermal design of the set. Positive effects of carbide layers that affect the ability of rewriting, maintained within the range of thickness values.

As the reflective mirror layer, layers of carbides, and dielectric layers can be obtained by precipitation from the vapor or sputtering.

The substrate of the information environment of carbonate, polymethylmethacrylate (PMMA), amorphous polyolefin or glass. In a typical example, the substrate is disk-shaped and has a diameter of 120 mm and a thickness of 0.1 to 0.6 or 1.2 mm When used as a substrate with a thickness of 0.6 or 1.2 mm, the substrate can be applied layers, starting with the first dielectric layer, the first layer of a carbide, a recording layer and so on. The laser beam is introduced into the set through the input outer surface of the substrate. Layers that are applied on the substrate, can also be used in reverse order, i.e. starting with a metal mirror layer. The last dielectric layer then provide transparent layer of one of the aforementioned substrate materials with a thickness of 0.1 mm, the Laser beam is set through the input outer side of the transparent layer.

On the other hand, the substrate can be performed in the form of a flexible film of synthetic resin, e.g. made of polystyrene film. In this way the optical film will be obtained for use in the recording device for an optical film, which, for example, is based on a rapidly rotating polygon. In such a device the reflected laser beam is scanned in the transverse direction across the film surface.

the which can be scanned optically. This servodio often get with grooves in a spiral form in the substrate by pressing during injection molding or stamping. This groove, on the other hand, can be formed in the copying process in the layer of synthetic resin, for example in a layer of acrylate, which hardens under the action of ultraviolet (UV) radiation, which is performed separately on the substrate. When recording with a high density of such a path is, for example, a step of 0.5-0.8 μm and a width of about half a step.

Optionally, the top layer of the set of screens from environmental influences by a protective layer, for example, poly(meta)acrylate, which hardens under the action of UV radiation.

Recording with high density and erasing can be achieved using a short wavelength laser, for example, with a wavelength of 675 nm or shorter (red, blue).

The recording layer of the phase transition can be applied to the substrate using vacuum deposition, electron beam vacuum deposition, chemical vapour deposition, ion deposition or sputtering. The layer obtained in the deposition process, is amorphous and has a low reflection. For education pathbin called initialization. With this purpose, the recording layer can be heated in a furnace to a temperature above the crystallization temperature of the GeSbTe compounds, for example, up to 180C. a Substrate of synthetic resin, such as polycarbonate, can in turn be heated with a laser beam with sufficient power. This can be implemented, for example, in the recording device, in which a laser beam scans by moving the recording layer. Then, the amorphous layer is locally heated to a temperature required for crystallization of the layer without exposing the substrate to excessive heat load.

Brief description of drawings

Summary of the invention in greater detail by means of embodiments and illustrated by reference to the accompanying drawings, in which

Fig.1 depicts a schematic view in cross section of the optical information medium according to the invention, with the set having the structure I1I+PI+AI2M;

Fig.2 depicts a schematic view in cross section of the optical information medium according to the invention, with the set having the structure I1I+PI+AM;

Fig.3 depicts a schematic view in cross section of the optical

Fig.4 depicts a schematic view in cross section of the optical information medium according to the invention, with the set having the structure I1I+PI+I3AI2M;

Fig.5 depicts a schematic view in cross section of the optical information medium according to the invention, with the set having the structure I1I+PI+I2AM;

Fig.6 depicts a schematic view in cross section of the optical information medium according to the invention, with the set having the structure I1I+PI+I3AI2.

The first option of carrying out the invention

In Fig.1 schematically shows a part cross-sectional optical information disc according to the invention. Position 1 indicates the polycarbonate substrate in the form of a disc with a diameter of 120 mm and a thickness of 0.6 mm Substrate 1 is made with a set of 2 I1I+PI+AI2M with the following structure:

the first dielectric layer 3 (ZnS)80(SiO2)20with a thickness of 225 nm (I1),

the first layer 4 of silicon carbide with a thickness of 5 nm (I+),

- recording layer 5 of the GeSbTe alloy with a thickness of 27 nm (P),

- the second layer 6 carbide with a thickness of 5 nm (I+),

- light-absorbing layer 7 of 20 nm (I2),

metal mirror layer 9 of the A1 with a thickness of 100 nm (M).

All layers by sputtering. The composition of the recording layer 5 is expressed in atomic percent concentration

Geof 13.75Sb27,40Te58,85.

The initial crystalline state of the recording layer 5 receive by heating precipitated amorphous alloy by means of a focused laser beam in the recording device.

The laser light beam for recording, reproducing and erasing information is entered in set 2 through the substrate 1. This beam is schematically indicated by the arrow 10. Amorphous marks are written using a single laser pulse powerw=1,25, Pm(where Pm- power threshold melting) and a duration of 100 NS. The erase power is equal to Pw/2.

Is PVA recording layer 5 in the set 2 is approximately 28 NS, which is equal to the set without the light-absorbing layer 7. The bit rate of user data (SPPD) is up to 50 Mbit/s (baud rate data bits (SPBD) is equal to 61 Mbps), whereas SPPD set without the light-absorbing layer 7 is 35 Mbps (SPBD equal to 41 Mbps). Adding a light absorbing layer 7, which results in the GDS as PVA remains unchanged.

The number of overwrite cycles before degradation of the environment becomes visible, that is, the ability to overwrite 1.2105. The ability to overwrite measured by the number of overwrite cycles, where the jitter of the temporary provisions of the pulses is increased to 12% from the synchronization period Tc, 28 NS at a speed CD 1,2 m/s, the synchronization period 230 NS. "Shake" temporary provisions of the pulses represents the standard deviation of the difference between the front and rear fronts in the information signal and synchronizing data that is restored from the information signal.

When SPBD 61 Mbps (SPPD 50 Mbit/s) and the channel bit length of 0.3 μm becomes possible relative linear speed between the laser beam and environment 18.3 m/s, that is 15 times higher than the speed of CD 1,2 m/s

The embodiments of the invention 2-6

Other embodiments of medium for recording according to the invention shown in Fig.2-6. In these drawings the same position indicate the same elements as in Fig.1 of the first variant implementation of the invention.

In Fig.2 depicts an environment with a set that has the structure of I1I+PI+AM, that is, it differs from Fig.1 in that the lack of the layer 7 has a high melting point, such as Mo and W.

In Fig.3 depicts the environment with a set that has the structure of I1I+PI+AI2that is , it differs from the structure shown in Fig.1, in that there is no metal mirror layer 9 (M). This set can be used, if the material is a light absorbing layer 7 (A) has the smallest value k.

In Fig.4 shows the environment with a set that has the structure of I1I+PI+I3AI2M, i.e. it is different from the structure shown in Fig.1, so that the third dielectric layer 11 (I3) is placed between the second layer 6 (I+) carbide and a light absorbing layer 7 (A).

In Fig.5 shows the environment with a set that has the structure of I1I+PI+I2AM, that is, it differs from the structure shown in Fig.1, so that the reversed light-absorbing layer 7 (a) and the second dielectric layer (I2).

In Fig.6 depicts the environment with a set that has the structure of I1I+PI+I3AI2i.e. it is different from the structure shown in Fig.4, the fact that there is no metal mirror layer 9 (M).

According to the invention is made of a rewritable optical information medium with a phase transition, such as a DVD-ROM, CVUS the ability to overwrite and low "jitter" when the linear velocity of 7.2 m/s or more. The resulting bit rate of user data of 50 Mbit/s

Claims

1. Optical information medium for rewritable recording by means of a laser beam containing a substrate bearing a layer set, this set contains the first and second layers of a carbide, a recording layer made of a material with a phase transition, which is placed between the layers of carbide, and a material with a phase transition allows you to record the amorphous marks, when it is in the crystalline state, the first dielectric layer is placed between the substrate and the first layer of carbide, while the light-absorbing layer is placed between the second layer of carbide and at least one selected layer of the metal mirror layer and the second dielectric layer, causing a greater absorption of a certain amount of laser radiation in the recording layer in the crystalline state, compared to the absorption in the amorphous state.

2. Optical information medium p. 1, characterized in that the second dielectric layer is placed between the metal reflecting layer and the light-absorbing layer.

3. Optical information medium p. 1 is carried out between the light-absorbing layer and the second layer of carbide.

4. Optical information medium p. 1, characterized in that the light-absorbing layer contains a metal selected from the group consisting of Mo, W, Pd, Pt, Co, Ni, Mn, TA, Cr, Ti, and Hf, or a semiconductor material selected from the group consisting of PbS, Ge, InP, and Si.

5. Optical information medium p. 1, characterized in that the light-absorbing layer has a thickness between 5 and 100 nm.

6. Optical information medium p. 1, wherein the carbide layer of a carbide selected from the group consisting of SiC, ZrC, TaC, TiC, and WC.

7. Optical information medium p. 1, characterized in that the recording layer contains a compound GeSbTe.

8. Optical information medium p. 1, characterized in that the recording layer has a thickness of from 10 to 35 nm, preferably from 25 to 35 nm.

9. Optical information medium p. 1, characterized in that the distance between the substrate and the recording layer is in the range from 70 to [70+/(2n)3] nm, where- wavelength laser light beam and n is the equivalent refractive index layer disposed between the substrate and the recording layer.

10. Optical information medium p. 1, characterized in that the distance between zapisyvaus the food in one of the preceding paragraphs, characterized in that the specified environment is provided for high-speed recording in which the relative speed between the laser beam and the specified environment is at least 7.2 m/s

 

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6 cl, 94 dwg

FIELD: optical recording technologies, namely, engineering of two-layered optical disks with high recording density, and of devices for recording/reproducing from them.

SUBSTANCE: two-layered optical disk with high recording density contains first recording layer and second recording layer, positioned on one side of central plane, dividing the disk in half along thickness, close to surface, onto which light falls. First thickness of substrate from surface, onto which light falls, to first recording layer has minimal value over 68,5 micrometers, second thickness of substrate from surface, onto which light falls, to second recording layer has maximal value less than 110,5 micrometers, while refraction coefficient is within range 1,45-1,70.

EFFECT: minimization of distortion of wave front, provision of possibility of more precise recording of signals onto optical disk or reproduction of signals from optical disk.

8 cl, 10 dwg

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