A device for processing semiconductor wafers
Usage: as an equipment for manufacturing semiconductor devices, for example, on the operations of cleaning semiconductor wafers. The inventive device for processing semiconductor wafers includes a tub mounted in a bath centrifuge rotor with holders for plates, orienting the device installed on the rotor shaft, the drive. The device is further provided with a mechanism for preliminary orientation, made in the form of a disk with a slot communicating with the photo sensor and is installed on the rotor shaft, and a retainer made in the form of a lever that is installed with the possibility of lateral movement in the sleeve, fixed to the rotor by means of a nut and pin, with one end of the lever provided with the axis on which the two rollers, and the second end of the lever is made in the form of a U-shaped groove, in which the possibility of lateral movement from the actuator is equipped with a roller on the bracket, in turn interacts with the walls of the above-mentioned groove, and orienting the device is made in the form of a disk with a cut part in the form of a segment. When this shear plane orientation of the disk interacts with two podsypku, in the above-mentioned rotor bushing made the hole with locking ball, respectively, in which the lock lever provided with a tapered recess, and each of the holders of the rotor provided with the annular groove with the lead-in taper. The technical result of the invention is the provision of two-way vertical machining plates, except the destruction of the plates and providing good quality cleaning while ensuring reliable operation in automatic mode. 7 Il.The invention relates to equipment for manufacturing semiconductor devices, IC, LSI, VLSI and can be used, for example, on the operations of cleaning semiconductor wafers.Widely known methods and devices of the individual processing of semiconductor wafers  installed horizontally on the vacuum table centrifuge. During rotation of the centrifuge motor exercise inkjet cleaning the surface of the plate. However, the known methods and devices make it possible to treat only one side of the plate.Also known device batch processing of wafers in a special bath . Semiconductor wafer vertically in the cassette, place the example deionized water, on a rotating plate with velocity V1rpm At a speed of V1>V2serves nitrogen for drying.The lack of batch processing of wafers is low as compared to individual treatment because of possible contamination settling on adjacent plates. In addition, there is a contamination of the solution, while the individual processing solution all the time is served fresh.The proposed device for processing semiconductor wafers is devoid of these shortcomings, provides bilateral washing plates in a vertical position, can increase the reliability and improve the quality of washing.This is achieved by the fact that the device is further provided with a mechanism for preliminary orientation, made in the form of a disk with a slot communicating with the photo sensor and is installed on the rotor shaft, and a retainer made in the form of a lever that is installed with the possibility of lateral movement in the sleeve, fixed to the rotor by means of a nut and pin, with one end of the lever provided with the axis on which the two rollers, and the second end of the lever is made in the form of a U-shaped groove, in which in the respective walls of the above-mentioned groove. Orienting the device is made in the form of a disk with a cut part in the form of a segment, while the shear plane orientation of the disk interacts with two bearings mounted on the axis of the holder with the possibility of reciprocation. In addition, in the hub of the rotor made a hole with locking ball, respectively, in which the lock lever provided with a tapered recess, and each of the holders of the rotor provided with the annular groove with the lead-in taper.Introduction disk with a slot communicating with the photosensor allows a preliminary orientation of the rotor. Why when loading a semiconductor wafer with a basic cut, the disc slot is set so that the groove is located in the work area of the photosensor. The final orientation of the rotor is performed using the proposed orienting device. This is important in the processing of semiconductor wafers with a basic slice.The execution of the lever with two movable rollers and the U-shaped groove allows you to record on base shear plate mounted vertically during rotation of the rotor and prevents the destruction of the plate.The holders, provided with the annular groove with the lead-in cone, lestini on the rotor. And the locking ball mounted in the recess of the bracket due to centrifugal forces, prevents inadvertent movement of the bracket in a horizontal plane during rotation of the plate.Thus, the proposed set of features is new and provides the possibility of two-way vertical machining plates, eliminating the destruction of the plates and providing a good quality wash.The invention is illustrated by drawings, which shows:in Fig.1 - General view of the device;in Fig.2 - section of the device along a-a;in Fig.3 - disk pre-orientation of the rotor;in Fig.4 - Turner;in Fig.5 - the device in operating position;in Fig.6 - position actuator bolt during rotation of the rotor plate;in Fig.7 - position of the orienting device when processing wafers.The proposed device (Fig.1) contains a bath with 1 outlet 2 and the load 3, the centrifuge rotor 4, provided with a holder 5 mounted on the uprights 6. The rotor 4 is mounted on bearings 7 in the housing 8 and is provided with a disk 9 having one groove 10 (Fig.3). The groove 10 communicates with the photosensor 11. The disk 9 mounted on the rotor so that when loading plates 12 on the rotor 4 pestka fixed guide disk 13 with the remote part in the form of a segment. Shear plane 14 after removal of the segment is used for orientation of the rotor with bearings 15 mounted on the axis 16 in the holder 17 with the actuator 18. Shear plane 14 of the guide disk 13 is set parallel to the base edge of the processed plate 12 when loading it on the rotor. The rotor 4 is driven by an electric motor 19 through pulleys 20, 21 and the V-belt 22.Plate loading is done using a mechanism (not shown) having a rod 23 and the carrier 24. Window 1 in the bath 3 is closed by a valve 25 having the actuator 26. To limit movement of the plate 12 during the processing of a rotor provided with rollers 27 (Fig.2) mounted on the axis 28, is pressed into the lever 29. The lever 29 can be moved in a horizontal plane in the sleeve 30 (Fig.1) fixed to the rotor 4 by a nut 31. From turning the lever 29 secured by a pin 32. Horizontal movement of the lever 29 is carried out using a roller 33 mounted in the U-shaped groove of the lever and mounted on a bracket 34 with the actuator 35. The actuators 26 and 35 secured to the tub by means of a bracket 36.The device is also equipped with nozzles 37 and 38. The nozzle 37 is fixed to the tub 1, and the nozzle 38 fixed to the body 8. Through either the 29 in the sleeve 30 has a pin 32, which moves in the groove 39 of the lever 29. In addition, in the sleeve 30 made the hole 40 with the locking ball 41, respectively, in which the lever 29 is made of the recess 42.The roller 33 has the opportunity to stay at three fixed positions:I position - right (loading and unloading plates, Fig.1);II position - left (the plates on the rotor, Fig.5);III position - secondary (processing plate 12 during its rotation, Fig.6). In this case, the roller 33 does not touch the lever 29. Between the planes of the U-shaped groove 42 and 43 of the lever 29 and the roller 33 having gapsand1(Fig.6).The holder 17 with the bearing 15 can take two positions:I - holder 17 presses the bearing 15 to the plane 14 of the disc 13. In this case, the rotor 4 is not able to rotate and set the loading position of the plates (Fig.4), and forming rollers 27 parallel to the horizontal;II - holder 17 with bearings 15 allocated from the plane 14 of the guide disk 13 by the value of L (Fig.7). The rotor 4 has a possibility of rotation.Arrows (a) in Fig.1 shows the movement of the carrier plate 24 when loading them on the centrifuge rotor and discharging after the wafer handling.For the device operates as follows.The transport plates (not shown) with the rod 23 and the carrier 24 moves the plate 12 to the position of the load, And the plate 12 on the carrier 24 is oriented so that the base shear at the top and the plane of its slice parallel to the horizontal. The rotor 4 of the centrifuge is also in oriented position, i.e., the holder 17 presses the bearing 15 to the plane 14 of the guide disk 13. The lever 29 with rollers 27 allotted to its original position by the roller 33. The carrier 24 lowers the plate 12 and puts it in the slots of the brackets 5 of the rotor 4. Further, the carrier 24 is lowered below the level of the plates is given to the left and displays up from the treatment area outside the bath 1 centrifuges. The bracket 34 with roller 33 moves to the left with the actuator 35. At the same time moves the lever 29 with the rollers 27 to the left. The rollers 27 are mounted on the base shear plate 12, and the recess 42 on the lever 29 is installed in front of the ball 41 (Fig.5), the roller 33 away from the plane of the U-shaped groove 42 of the lever 29 by the value ofbefore reaching the plane 43 by the value of1(Fig.6).Then the holder 17 with bearings 15 away from the plane of the slice 14 of the disc 13 by means of the actuator 18 (Fig.7), freeing Roto the window 3 in the bath 1.In the nozzle 37, 38 is a solution or deionized water, and a rotor 4 with plate 12 starts to rotate from the actuator 19 with the speed required for wafer handling.After processing the wafers 12 solution or deionized water supply these solutions is stopped, and the rotor 4 moves at high speed to remove moisture from the surface of the plate 12. During rotation of the rotor 4, the ball 41 due to centrifugal force is included in the recess 42 of the bracket 29, protecting against inadvertent movement of the bracket 29 in the horizontal plane.After drying, the plates 12, the actuator 19 of the rotor 4 moves at low speed and when the coincidence of the groove 10 of the disc 9 with the position of the photosensor 11, the actuator 19 stops the rotor 4. Further, the actuator 18 moves the bracket 17 by bearings 15 in the direction of the disk 13. Bearings 15 rest on the plane 14, finally orienting the rotor 4 in the desired position. The actuator 35 moves the bracket 34 with roller 33 to the right. The roller 33 in turn moves the bracket 29 to the right, moving the rollers 27 and the opening end (base shear) plate 12. Ball 41 drops into the hole of the sleeve 30, while not impeding the movement of the bracket 29. The valve 25 is moved by the actuator 26 to the right, opening the boot screen 3 baths 1.The rollers 27 and 5 is made rotatable. The roller 27 is necessary that the plate is not lost when loading, as the rollers can be rotated and the plate will remain in place. As for rollers 5 this is important when the release plate after processing, as the rollers in this case, turning, prevent damage to the plate.Sources of information1. The Japan patent No. 6056833, CL H 01 L 21/027, 1997.2. Copyright certificate № 1600856, class 08 In 3/02, 1990.3. Copyright certificate № 1314880, CL H 01 L 21/00, 1985 (prototype).
ClaimsA device for processing semiconductor wafers containing a bath set in bath centrifuge rotor with holders for plates, orienting the device installed on the rotor shaft, the actuator, characterized in that it further provided with a mechanism for preliminary orientation, made in the form of a disk with a slot communicating with the photo sensor and is installed on the rotor shaft, and a retainer made in the form of a lever, set the om one end of the lever is provided with an axis, fitted with two rollers, and the second end of the lever is made in the form of a U-shaped groove, in which the possibility of lateral movement from the actuator is equipped with a roller on the bracket, in turn interacts with the walls of the above-mentioned groove and the guide device is made in the form of a disk with a cut part in the form of a segment, while the shear plane orientation of the disk interacts with two bearings mounted on the axis of the holder with the possibility of reciprocation, in addition, in the above-mentioned rotor bushing made the hole with locking ball, respectively, in which the lock lever provided with a tapered recess, and each of the holders of the rotor provided with the annular groove with the lead-in taper.
FIELD: organic chemistry, chemical technology.
SUBSTANCE: invention relates to a method for purifying octafluorocyclobutane. Method is carried out by interaction of crude octafluorocyclobutane containing impurities with the impurity-decomposing agent at increased temperature and then with adsorbent that is able to eliminate indicated impurities up to the content less 0.0001 wt.-% from the mentioned crude octafluorocyclobutane. Impurity-decomposing agent comprises ferric (III) oxide and compound of alkaline-earth metal in the amount from 5 to 40 wt.-% of ferric oxide and from 60 to 95 wt.-% of compound of alkaline-earth metal as measured for the complete mass of the impurity-decomposing agent. Ferric (III) oxide represents γ-form of iron hydroxyoxide and/or γ-form of ferric (III) oxide. Impurity represents at least one fluorocarbon taken among the group consisting of 2-chloro-1,1,1,2,3,3,3-heptafluoropropane, 1-chloro-1,1,2,2,3,3,3-heptafluoropropane, 1-chloro-1,1,2,2,3,3,3-heptafluoropropane, 1-chloro-1,2,2,2-tetrafluoroethane, 1-chloro-1,1,2,2-tetrafluoroethane, 1,2-dichloro-1,1,2,2-tetrafluoroethane, hexafluoropropene and 1H-heptafluoropropane. Adsorbent represents at least one of representatives taken among the group including activated carbon, carbon molecular sieves and activated coal. Crude octafluorocyclobutane interacts with the mentioned impurity-decomposing agent at temperature from 250oC to 380oC. Invention proposes gas, etching gas and purifying gas including octafluorocyclobutane with purity degree 99.9999 wt.-% and above and comprising fluorocarbon impurity in the concentration less 0.0001 wt.-%. Invention provides enhancing purity of octafluorocyclobutane.
EFFECT: improved purifying method.
26 cl, 13 tbl, 10 ex
FIELD: organic chemistry, chemical technology.
SUBSTANCE: invention relates to a method for purifying octafluoropropane. Method is carried out by interaction of crude octafluoropropane comprising impurities with the impurity-decomposing agent at increased temperature and then with adsorbent that are able to remove indicated impurities up to the content less 0.0001 wt.-% from indicated crude octafluoropropane. The impurity-decomposing agent comprises ferric (III) oxide and compound of alkaline-earth metal in the amount from 5 to 40 wt.-% of ferric oxide and from 60 to 95 wt.-% of compound of alkaline-earth metal as measured for the complete mass of the impurity-decomposing agent. Ferric (III) oxide represents γ-form of iron hydroxyoxide and/or γ-form of ferric (III) oxide. Impurities represent at least one compound taken among the group consisting of chloropentafluoroethane, hexafluoropropene, chlorotrifluoromethane, dichlorodifluoromethane and chlorodifluoromethane. Adsorbent represents at least one substance taken among the group consisting of activated coal, molecular sieves and carbon molecular sieves. Crude octafluoropropane comprises indicated impurities in the amount from 10 to 10 000 mole fr. by mass. Invention proposes gas, etching gas and purifying gas comprising octafluoropropane with purity degree 99.9999 wt.-% and above and containing chlorine compound in the concentration less 0.0001 wt.-%. Invention provides enhancing purity of octafluoropropane.
EFFECT: improved purifying method.
13 cl, 11 tbl, 12 ex
FIELD: polymer materials.
SUBSTANCE: method of applying high-resolution image of functional layers, e.g. for applying lithographic mask or other functional layers, comprises polymerization of monomers from vapor phase under action of finely focused electron beam with energy 1 to 1000 keV followed by injection of monomer vapors at pressure from 10-4 to 10 torr. Electron beam is introduced into working chamber through a small opening in membrane, which enables avoiding scattering of electrons on membrane and, at the same time, maintaining monomer vapor pressure in working chamber high enough to ensure acceptable growth time for thickness (height) of image line. Preferred image applying conditions are the following: electron energy in electron beam 10 to 500 keV and monomer vapor pressure 0.001 to 10 torr. For electron beam diameter 50 nm, image width 100-150 nm can be obtained. When improving electron beam focusing, accessible electron beam diameter may be further diminished.
EFFECT: enabled high-resolution image of functional layers directly from monomer in single-step "dry" process without using any solvents.
2 cl, 2 dwg, 8 ex
FIELD: semiconductor microelectronics; high-degree surface cleaning technologies.
SUBSTANCE: proposed method can be used in resource and energy conservation environmentally friendly and safe technology for integrated circuit manufacture, removal of positive photoresist from wafer surface, electrochemical etching of silicon, and degreasing of surfaces. Si surface is cleaned by detergent NH4HF2 of 0.1 - 4 M concentration activated by ozone at anode current density of 1 - 2 kA/m2, and waste solution is cleaned and activated by sequentially passing it through electrolyzer cathode and anode chamber.
EFFECT: enhanced quality and effectiveness of photoresist removal from semiconductor surface.
2 cl, 2 dwg
FIELD: plasma-chemical treatment of wafers and integrated circuit manufacture.
SUBSTANCE: proposed device that can be used in photolithography for photoresist removal and radical etching of various semiconductor layers in integrated circuit manufacturing processes has activation chamber made in the form of insulating pipe with working gas admission branch; inductor made in the form of inductance coil wound on part of pipe outer surface length and connected to high-frequency generator; reaction chamber with gas evacuating pipe, shielding screens disposed at pipe base, and temperature-stabilized substrate holder mounted in chamber base. In addition device is provided with grounded shield made in the form of conducting nonmagnetic cylinder that has at least one notch along its generating line and is installed between inductor and pipe; shielding screens of device are made in the form of set of thin metal plates arranged in parallel at desired angle to substrate holder within cylindrical holder whose inner diameter is greater than maximal diameter of wafers being treated. Tilting angle, quantity, and parameters of wafers are chosen considering the transparency of gas flow screen and ability of each wafer to overlap another one maximum half its area. In addition substrate holder is spaced maximum four and minimum 0.6 of pipe inner diameter from last turn of inductance coil; coil turn number is chosen to ensure excitation of intensive discharge in vicinity of inductor depending on generator output voltage and on inner diameter of pipe using the following equation:
where n is inductance coil turn number; U is generator output voltage, V; Dp is inner diameter of pipe, mm.
EFFECT: enhanced speed and quality of wafer treatment; reduced cost due to reduced gas and power requirement for wafer treatment.
1 cl, 6 dwg, 1 tbl
SUBSTANCE: proposed method that can be used for photolytic etching of wafers in the course of manufacture of very large-scale integrated circuit includes etching of SiO2 surface in sulfur hexafluoride under action of vacuum ultraviolet emission of deuterium-vapor lamp. Argon is introduced in addition into etching gas.
EFFECT: enhanced selectivity of silicon dioxide etching with respect to monocrystalline and polycrystalline silicon.
3 cl, 1 tbl
FIELD: process equipment for manufacturing semiconductor devices.
SUBSTANCE: plasma treatment chamber 200 affording improvement in procedures of pressure control above semiconductor wafer 206 is, essentially, vacuum chamber 212, 214, 216 communicating with plasma exciting and holding device. Part of this device is etching-gas source 250 and outlet channel 260. Boundaries of area above semiconductor wafer are controlled by limiting ring. Pressure above semiconductor wafer depends on pressure drop within limiting ring. The latter is part of above-the-wafer pressure controller that provides for controlling more than 100% of pressure control area above semiconductor wafer. Such pressure controller can be made in the form of three adjustable limiting rings 230, 232, 234 and limiting unit 236 on holder 240 that can be used to control pressure above semiconductor wafer.
EFFECT: enhanced reliability of pressure control procedure.
15 cl, 13 dwg
FIELD: manufacture of microelectronic and nanoelectronic devices.
SUBSTANCE: selective etchant of AlAs and AlGaAs layers relative to GaAs has iodine I2 and organic solvent wherein iodine I2 is dissolved, proportion of mentioned components being as follows, mass percent: iodine, 0.1 - 4; organic solvent, 96 - 99.9. Isopropyl alcohol or acetone can be used as organic solvent. Enhanced selectivity of etching AlAs and AlGaAs layers including those with low Al content (below 40%), as well as their high selectivity relative to InAs and InGaAs are attained at room temperature.
EFFECT: ability of using proposed etchant in nanotechnology for separating upper layers in the order of several single layers.
FIELD: engineering of semiconductor devices.
SUBSTANCE: invention concerns method and device for etching dielectric, removing etching mask and cleaning etching chamber. In etching chamber 40 semiconductor plate 56 is positioned. Dielectric 58 made on semiconductor plate is subjected to etching, using local plasma, produced by special device for producing local plasma during etching process. Mask for etching 60 is removed by means of plasma from autonomous source 54, generated in device for producing plasma from autonomous source connected to etching chamber. Etching chamber after removal of semiconductor plate is subjected to cleaning, using either local plasma, or plasma from autonomous source. To achieve higher level of cleaning, it is possible to utilize a heater, providing heating for chamber wall.
EFFECT: increased efficiency.
2 cl, 4 dwg
FIELD: technology for producing semi-penetrable membranes for molecular filtration of gas flows and for division of reaction spaces in chemical reactors.
SUBSTANCE: method for producing gas-penetrable membrane includes two-sided electro-chemical etching of monocrystalline plate made of composition AIIIBV of n conductivity type or of semiconductor AIV with width of forbidden zone E≥1,0 electron volts and alloying level 1017-1020 1/cm3. Modes of aforementioned etching are set, providing for generation of simultaneously porous layers, while etching process is performed until moment of spontaneous stopping of electro-chemical process and generation of solid separating layer of stationary thickness on given part of plate area, determined using sharp bend on the curve of temporal dependence of anode current.
EFFECT: gas membrane, produced in accordance to method, has increased penetrability for molecules of light gases and increased selectivity characteristics at room temperature.
2 cl, 3 dwg, 3 ex