The method of coating by chemical means (options)

 

The invention relates to coating by chemical means, in particular on products of material, for which the chemical coating directly applicable. The method includes forming a metal film made of metal, which can be applied film chemically by immersion of the product in the tank for coating by chemical means, forming a conductive film of uniform thickness on the entire surface of a product containing metal film. The technical result is increased productivity and reliability of the products processed by the proposed method of coating. 11 C. and 33 C.p. f-crystals, 19 ill.

The present invention relates to a method of coating by chemical means for coating a product made of a constituent of his material for which the method of coating by chemical means directly applicable, and in particular to a method of coating by chemical means suitable for forming a conductive film on the end faces of the metal or semiconductor, for which the method of coating by chemical means directly applicable.

The prior art If the opposite ends of thermoelectric device hold on the contrary, by passing through it an electric current at one end is exothermic reaction, while the other end is an endothermic reaction. Accordingly, the same effect is used in the cooling device and other similar devices using endothermic phenomenon. As described thermoelectric device has a simple structure and has advantages over other generators of electricity with the miniaturization, etc., high hopes for the possibility of its application in portable electronic devices, such as electronic wrist watches.

Such thermoelectric device consists of many consecutive thermocouples, each of which consists of a semiconductor thermoelectric material with a conductivity of p-type semiconductor thermoelectric material with n-type conductance. The design of such thermoelectric devices of the General type will be described with reference to Fig.19.

thermoelectric device 10 depicted in Fig.19, includes a block 11 of thermoelectric device, which in turn are thermoelectric semiconductors 1 p-type and thermoelectricity film 3, available on the end faces on opposite sides of the respective thermoelectric semiconductors 1, is connected to the mounting electrode 6 made of copper or gold on the substrate 7 through the corresponding connection layers 5, which gives thermoelectric unit 11 electrical continuity with the substrate 7, and sequentially connects the respective thermoelectric semiconductors 1 with each other.

Before connecting thermoelectric device 10 with the substrate 7 at the ends of the respective thermoelectric semiconductors 1, on their opposite sides, forming a conductive film 3 for connection with the respective mounting electrodes 6. This is necessary for the following reasons.

The connecting layers 5 are used to provide electrical continuity between the respective thermoelectric semiconductors 1 and the corresponding mounting electrodes 6, however, if you do the connection layers 5 of the solder, it is contained in the tin diffuses into the respective thermoelectric semiconductors 1, which degrades performance of thermoelectric device 10. Therefore, it is necessary to form the conductive film 3, Chislev 5 of the conductive adhesive is necessary to form the conductive film 3 with low contact resistance relative to the conductive adhesive, as there is a high contact resistance between the respective thermoelectric semiconductors 1 and conductive adhesive.

For forming the metal film on thermoelectric semiconductor serving as a conductive film, typically used in the method of coating. However from a performance perspective, it is reasonable to use the method of coating by chemical means using an autocatalytic bath for coating by chemical means. However, it is impossible to apply the coating by chemical means on thermoelectric semiconductors made of intermetallic-based bismuth-tellurium or antimony-tellurium.

For this reason, to form a conductive film on the surface of a material, such as a thermoelectric semiconductor, for which the coating is applied by chemical means not applicable method is usually used for electrodeposition.

However, for forming a conductive film on the surface of thermoelectric semiconductor by the electroplating method, you must apply power to thermoelectric semiconductor, this raises the following problem: the thickness of a formed osajda is called significant by the resistance of thermoelectric semiconductor. As a result of fluctuations in the thickness of the deposited conductive film, and thus reduces the effect of preventing diffusion of the tin contained in the solder, and also deteriorates the wettability of the solder.

In the document JP11-186619 described method of coating by chemical means, in which thermoelectric semiconductor supply catalyst, such as platinum, palladium, etc., and which is used for forming the conductive film constituting the conductor material to which the coating is applied by chemical means not applicable.

However, in this method, the coating chemically carried out with the use of the catalyst as the seed crystals, and it is usually used for forming a conductive film on the plastic. In the described method, there is no problem of uneven thickness of the film formed by the electroplating method, but it has its problems.

Because this method is adsorption catalyst, which serves as the seed crystals, the parts that are not thermoelectric semiconductor, the selectivity plots, which must be formed in the conductive film, will be lost after immersion termoelektro who are also on unnecessary parts, for example on the surface of insulators.

Therefore, not only is there the problem of the impossibility of forming conductive films on the surface constituting the product of the material to which the coating is applied by chemical means is not applicable, but also the problem of loss of selectivity plots, which must be formed in the conductive film, even if these conductive films were formed by chemical means.

This is particularly important when thermoelectric device containing thermoelectric semiconductors are very small in size, has a petite structure in which adjacent thermoelectric semiconductors are located with a spacing from a few microns to several tens microns. The smaller the structure of thermoelectric device, the harder it is to form a conductive film selectively only on thermoelectric semiconductors. Therefore, the main problem in the manufacture of thermoelectric devices is in selective formation of the conductive films by chemical means.

The basis of the invention is to solve the above mentioned problems and to provide a method of coating by chemical means, which would have allowed the FOIA by chemical means not applicable and selectively forming the conductive film of uniform thickness on the ends of the respective thermoelectric semiconductors made from of their constituent material, the surface of which it is impossible to apply the coating by chemical means, thereby to improve the performance and reliability of the obtained thermoelectric device.

The inventive Method of coating by chemical means (i.e., coating by a chemical recovery) according to the invention is that forming a metal film made of metal, which can be applied film by chemical means, on the part of the surface covered product or cause the metal in contact with a part of the surface covered products, made from a component of its material to which the coating is applied by chemical means not applicable immerse covered product with formed thereon a metal film or in contact with the said metal in a bath for coating by chemical means and form a film by chemical means on the surface of the coated product, not containing formed therein a metal film and said metal in contact with it.

In addition to the metallic film of metal, which can be applied film by chemical means, on the part of the surface covered product or lead metal in contact with a part of the surface covered products, made from a component of its material to which the coating is applied by chemical means not applicable immerse covered product with formed thereon a metal film or in contact with the metal in a bath for coating by chemical means and form a film by chemical means on the entire surface of the coated articles containing metal film or the metal, removing the metal film or the metal part of the film caused by chemicals, covering a metal film or a metal, with the covered product and again immerse the coated product is subjected to the above-described stages in the tank for coating by chemical means.

In any of the methods described above coating by chemical covered product can be made from several kinds of constituent materials or may be a thermoelectric semiconductor.

In addition, in any of the methods described above coating chemically deposited by chemical film can be strmilov the FDS coating by chemical means according to the invention, intended for the manufacture of thermoelectric devices can be performed as follows: (1) forming a metal film made of metal, which can be applied film by chemical means, at one end of the unit thermoelectric devices are made as a single unit from a variety of thermoelectric semiconductor with an insulating layer interposed between them, respectively; (2) immerse the unit thermoelectric devices formed thereon a metal film in a bath for coating by chemical means and form a chemical film through the metal film and the other end of the respective thermoelectric semiconductors on the side opposite the ends, on which was formed a metal film; (3) remove the metal film and the part caused by chemical film covering the metal film; (4) re-immerse the unit thermoelectric devices subjected to the above-described stages in the tank for coating by chemical means and form a film by chemical means on the end of the respective thermoelectric semiconductors, which was removed metal film.

In the method of applying pacra which can be applied film by chemical means, in contact with a part of at least one of the ends of the respective thermoelectric semiconductor block thermoelectric device is made as a single unit from a variety of thermoelectric semiconductor with an insulating layer interposed between them, respectively; (6) immerse the unit thermoelectric devices with metal in contact with it in the bath for coating by chemical means and form a film by chemical means on the entire surface of the respective thermoelectric semiconductors, except for that part which is in contact with the metal; (7) separating the metal in contact with the respective thermoelectric semiconductors, from the latter, and
(8) again immerse the unit thermoelectric devices subjected to the above-described stages in the tank for coating by chemical means and form a film by chemical means on the part of end faces of the respective thermoelectric semiconductors were in contact with the metal.

In addition, in the above-described method of coating by chemical means mentioned stage (1)-(8) can be replaced by the following stages (9) and (10):
(9) forming a metal film of a metal, n is on the side of one of the ends of the unit thermoelectric devices, executed as a single unit from a variety of thermoelectric semiconductors with appropriate insulating layers located between them, so that the metal film extends on the respective insulating layers and a portion corresponding to both ends of thermoelectric semiconductors adjacent to each other through corresponding spaced alternately with insulating layers, and
(10) immerse the unit thermoelectric devices formed thereon a metal film in a bath for coating by chemical means and form a chemical film through the metal film, and both ends of the respective thermoelectric semiconductors with formed on its end face metal film.

In addition, in the above-described methods of coating the chemical by the above-mentioned steps (1) to(8) can be replaced by the following stages (11) and (12):
(11) forming a metal film made of metal, which can be applied film by chemical means, either on one or on the other end of the respective insulating layers alternately on both end sides of the unit thermoelectric devices are made as a whole from multiple thermoelectrics the second film extends on the respective insulating layers and a portion corresponding to both ends of thermoelectric semiconductors, adjacent to each other through the respective insulating layers, and
(12) immerse the unit thermoelectric devices formed thereon a metal film in a bath for coating by chemical means and form a chemical film through the metal film, and both ends of the respective thermoelectric semiconductors with metal film formed on part of one and the other of their ends.

In addition, in any of the methods of coating chemicals by containing the above-mentioned steps (1) to(12), you can use the unit thermoelectric devices having open outer surface of the side wall of the respective thermoelectric semiconductors, located at opposite ends in the direction of the layout of the respective thermoelectric semiconductors, and caused by chemical film can also be formed on exposed outer side surfaces at the stage of formation of a film by chemical means.

In addition, in the case of applying the proposed method of coating by chemical for the manufacture of thermoelectric devices, this method preferably includes a step of roughening t is who.

In addition, according to the invention a method of coating by chemical method for manufacturing thermoelectric device preferably includes a step of cleaning the unit thermoelectric devices before or after the stage of formation of a film by chemical means on the unit thermoelectric devices.

According to the invention is also a method of coating by chemical means, namely, that prepare the covered product made of metal or semiconductors, for which the coating is applied by chemical means not applicable, and insulators, and forms a metal film made of metal, which can be applied film by chemical means, on part of the surface covered product or lead metal in contact with a part of the surface of the coated product and immerse the product formed thereon a metal film or in contact with the said metal in a bath for coating by chemical means and form a film by chemical means on the entire surface of the covered product excluding insulators.

As a constituent of the product material to which the coating is applied by chemical means is not applicable, you can use metal or POI can be applied film by chemical means, you can use palladium, platinum or Nickel.

As insulators or insulating layers preferably used insulating resin.

Brief description of drawings
Fig. 1 depicts a cross section illustrating the state in which a metal film made of metal, which can be applied film by chemical means, formed on the side surface of thermoelectric semiconductor material according to the invention;
Fig.2 depicts a cross section illustrating the state in which a conductive film is formed by chemical method on the entire surface of thermoelectric semiconductor and the metal film;
Fig. 3 depicts a cross-section, schematically illustrating the unit thermoelectric devices, which must be coated by chemical means according to the invention;
Fig. 4-8 depict cross-sections, sequentially illustrating respective stages of the coating by chemical means on the unit thermoelectric devices according to the first embodiment of the invention;
Fig. 9-11 depict cross-sections, sequentially illustrating respective stages of the coating by chemical means on the unit thermoelectric devices according to the second variant of the I coating by chemical means on the unit thermoelectric devices according to the third variant of the invention;
Fig.14-16 depict cross-sections, sequentially illustrating respective stages of the coating by chemical means on the unit thermoelectric devices according to the fourth variant of the invention;
Fig. 17 depicts a cross section illustrating the state in which the pins are brought into contact with the unit thermoelectric devices in the coating by chemical means on the unit thermoelectric devices according to the first embodiment of the invention;
Fig. 18 depicts a cross section illustrating the state in which a metal film formed on another unit thermoelectric device coating by chemical means according to the fourth variant of the invention,
Fig.19 depicts a cross-section, schematically illustrating the construction of thermoelectric device of conventional type, known from the prior art.

Preferred embodiments of the invention
Hereinafter will be described the preferred embodiments of the method of coating by chemical means according to the invention with reference to the drawings. First will be described the main variant of the method of coating by chemical means according to the invention with reference to a metallic film made of metal, which can be applied film by chemical means, formed on the side surface of thermoelectric semiconductor, which is an example of covered products, made from the average of its material, for which a direct coating by chemical means not applicable.

Thermoelectric semiconductor 8 is a block shape and is usually made of the intermetallic (intermetallic compounds) selected from the group consisting of compounds of bismuth-tellurium, antimony-tellurium, bismuth-tellurium-antimony, bismuth-tellurium-selenium, etc., but it can also be made of intermetallic selected from the group consisting of compounds on the basis of lead-germanium, silicon-germanium, etc., although not limited to the listed options.

When applying the method of coating by chemical means according to the invention first forms a metal film 2 made of metal, which can be applied film by chemical means, on the part of the surface of thermoelectric semiconductor 8 by spraying in vacuum, sputtering, or similar, as shown in Fig.1. Metal film 2 formed at this stage, may be of any metal, which causes the precipitation of mrswede such metal, as palladium, platinum, Nickel, etc., in Addition to vacuum deposition or sputtering the metal film 2 can be formed by a method of deposition of a conductive resin such as a conductive paste comprising metal particles, which can precipitate film by chemical means, and insulating resin by a printing method, etc.,

After that, thermoelectric semiconductor 8 formed thereon a metal film 2 is dipped into the bath for coating by chemical means (not shown), where the first film is applied by chemical means on the surface of the metal film 2. Because at this point, the metal film 2 is in contact with thermoelectric semiconductor 8, changes the potential of thermoelectric semiconductor 8 relative to the baths for coating by chemical means (the condition that is required to transfer electrons of the metal in the bath for coating by chemical means) that allows the deposited film by chemical means on thermoelectric semiconductor 8. Accordingly, caused by chemical film on the metal film 2 extends to thermoelectric semiconductor 8, so that the entire surface of thermoelectric poluprovodnikov, having a uniform thickness, as shown in Fig.2.

If the components of the product material for which a direct coating by chemical means is not applicable, is the above-mentioned thermoelectric semiconductor, a conductive film 3 is preferably formed from Nickel (Ni), with high efficiency in preventing diffusion of tin, copper, etc. in thermoelectric semiconductor, although the choice component of the material does not limit the choice solely Nickel.

In addition, a conductive film 3 can be formed by deposition of at least two types of metal films, one on top of another. For example, a conductive film 3 can be formed by deposition of a metallic film of gold (AU) or copper (cu) on the metal film of Nickel to obtain a two-layer structure. This prevents the occurrence of cracks, which would otherwise occur on a metal film formed of Nickel, under the action of mechanical or thermal stress, due to the elasticity of gold (Au) or copper (Cu), and thereby increases the reliability of thermoelectric device.

The above method allows forming a conductive film RA is its material, which is considered impossible a direct application of the conductive film, which can improve the performance of manufacturing thermoelectric devices using thermoelectric semiconductors.

Products that can be coated by this method is not limited to thermoelectric semiconductors. This method allows you to chemically to form a conductive film made of metal having high conductivity, even in metal, such as cadmium, tungsten, zinc, tin, lead, bismuth, antimony, etc., that is considered impossible coating by chemical means.

In addition, instead of forming the metal film of the metal on which it is possible to besiege film by chemical means, on the part of the surface of the coated product, as described above, it is possible to cause the metal on which it is possible to apply coatings by chemical means, in contact with the coated chemical by product, such as a thermoelectric semiconductor and so on, and in keeping contact with any accessories, such as clamping, cover the product can be immersed in a bath for coating by chemical means getting the same effect form the opening. In this case, in direct contact with the product to be coated, can be cast clamp, made of metal, it is possible deposition of the film by chemical means. Made of metal, on which a coating film by chemical means, you can do the whole clip, but only partially in contact with the coated product.

After removal of the metal film 2 and part 3a of the conductive film 3 covering the metal film 2, as shown in Fig.2, thermoelectric semiconductor 8 can again be immersed in the bath for coating by chemical means. Thus, it is possible to form a conductive film 3 on the entire surface of thermoelectric semiconductor 8.

Hereinafter will be described in detail embodiments of the method of coating by chemical means on the unit thermoelectric devices according to the invention with reference to Fig.3-18. In these figures parts corresponding to parts in Fig.19 indicated by the same numbers of items.

First option: Fig.3-8 and Fig.17
The first variant of the invention will be described with reference to Fig.3-8 and Fig.17. This method of coating by chemical means on the unit thermoelectric devices to illustrare is .3 shows the cross section of the block 11 of thermoelectric device, which is a product for coating. In block 11 of thermoelectric device, thermoelectric semiconductors 1 with the conductivity of p-type and n-type, having the form of rods, are arranged alternately with an interval of from about 5 to 80 μm, and between them provides an insulating layer 4 of epoxy resin, which isolates adjacent thermoelectric semiconductors 1 from each other.

As thermoelectric semiconductors 8 described above, thermoelectric semiconductors 1 made from conventional intermetallic selected from the group comprising compounds of bismuth-tellurium, antimony-tellurium, bismuth-tellurium-antimony, bismuth-tellurium-selenium, or intermetallic selected from the group including compounds of lead-germanium, silicon-germanium, etc., although the invention is not limited to the above materials.

Block 11 of thermoelectric device is formed as follows. At first make a block of thermoelectric semiconductors (not shown) in the form of a comb with lots of grooves, arranged with a predetermined pitch, for thermoelectric semiconductors of p-type and n-type, respectively. Then these blocks of thermoelectric semiconductors connect dcov fit into the corresponding groove of another block of thermoelectric semiconductors pour the epoxy resin into the gap between them, and then filled epoxy resin utverjdayut method of heat treatment, resulting in a single unit. After that, unnecessary portions of the one block is removed by grinding and receiving unit 11 of thermoelectric device.

Then by spraying in vacuum, sputtering, or similar form of the metal film 2 on the entire surface of the one end 11a of the ends 11a, 11b of the block 11 of thermoelectric device containing the ends 1a, 1b of the respective thermoelectric semiconductors 1, respectively, as shown in Fig.4. The metal film 2 is formed of metal, which can be applied film by chemical means, i.e., of metal, on which the reaction occurs deposition of metal in the bath for coating by chemical means. For example, in the case of chemical deposition of Nickel metal film 2 is formed from a metal selected from the group consisting of palladium, platinum, Nickel, etc., in Addition, instead of forming the metal film 2 by spraying in a vacuum or sputtering can be formed by applying a conductive resin such as a conductive paste comprising metal particles, on which a coating film chemical pull it metal film 2 is dipped into the bath for coating by chemical means, then, on the surface of the metal film 2 reaction takes place deposition of the film by chemical means, as shown in Fig.5, and simultaneously changes the potential of the respective thermoelectric semiconductor 1 relative to the baths for coating by chemical means (the condition that is required to transfer electrons of the metal in the bath for coating by chemical means), so that the reaction of the deposition film by chemical means is also occurring at the ends 1b, on the other side of the respective thermoelectric semiconductor 1, where it is not formed of the metal film 2. Thus, it is possible directly by chemical means to form a conductive film 3 at the ends 1b of the respective thermoelectric semiconductors 1.

Then, the metal film 2 and a part of the conductive film 3 formed on top of the metal film 2 to cover her, is removed by etching, as shown in Fig.6, and then the unit 11 thermoelectric device again immersed in a bath for coating by chemical means, then it is possible to form a conductive film 3 is selectively only on the end faces 1A of the respective thermoelectric semiconductors 1, exposed after removal of the metal 3 is not formed no unnecessary parts, such as insulating layers 4, it is possible to ensure electrical insulation between the respective thermoelectric semiconductors 1, and thereby it is possible to obtain reliable thermoelectric device with the conductive film 3 formed only on both ends 1a, 1b of the respective thermoelectric semiconductors.

In addition, instead of forming the conductive films 3 in block 11 of thermoelectric device, as described above, you can also use the following process. You can first lead pin 14 of metal, on which a coating film by chemical means, in the form of needles, as shown in Fig. 17, in contact with a part of the end face 1b of the respective thermoelectric semiconductors 1, or lead plate (not shown) made of metal, on which a coating film by chemical means, in the form corresponding to the end face 11a (11b) of the block 11 of thermoelectric device in contact with the end face 1b of the respective thermoelectric semiconductors 1. After that, the block 11 of thermoelectric device with the pins in contact with him immersed in a bath for coating by chemical means, the resulting film is deposited chemically on the whole surface of the respective thermoelectric 14 from the respective thermoelectric semiconductors 1 unit 11 thermoelectric device again immersed in a bath for coating by chemical means and thereby cause deposition of the film by chemical means on part of the surface of the respective thermoelectric semiconductors 1, in contact with the probe 14. Thus, it is possible to form a conductive film 3 only at both ends 1a, 1b of the respective thermoelectric semiconductors 1.

When performing the above-described etching photoresistive material (not shown) is applied on the entire surface of the block 11 of thermoelectric device from the side of his face 11b shown in Fig.5. The reason for this is that the conductive film 3 is already formed selectively on the end face 1b on one side of the respective thermoelectric semiconductors 1, must be protected photoresistive material, and the metal film 2 and the conductive film 3 formed on the side end face 11a of the block 11 of thermoelectric device, must be carefully removed. In this regard, in addition to etching to remove unnecessary metal film 2 and the conductive film 3 is polished.

As a material for the conductive films 3 formed by chemical means, preferably Nickel is used because it is highly effective in preventing diffusion of tin, copper, etc. in the respective thermoelectric semiconductors 1, however, the choice of metal for use in the conductive film 3 is not limited to Nickel. The AOC is the national Olympic Committee, one on top the other. For example, the conductive film 3 can be formed by deposition of a metallic film of gold (Au) or copper (Cu), a metal film made of Nickel, to obtain a two-layer structure. This prevents the occurrence of cracks, which would otherwise occur on a metal film of Nickel under the action of mechanical or thermal stress, due to the elasticity of gold (Au) or copper (Cu), and thereby to improve the reliability of thermoelectric device.

Then, as shown in Fig.8, the connecting layers 9 made of connective material, such as conductive adhesive or solder, is formed by the method of print in block 11 of thermoelectric device provided with the conductive film 3 formed on the end faces 1a, 1b, respectively, on opposite sides of the respective thermoelectric semiconductors 1, shown in Fig.7. Thermoelectric semiconductors 1 p-type thermoelectric semiconductors 1 n-type serially connected to each other respectively through the corresponding connecting layers 9, and after heat treatment, the respective thermoelectric semiconductors 1 are electrically after reelections device 20 through the serial connection of the respective thermoelectric semiconductors 1, you can use the method is illustrated in Fig.19. To do this, prepare the substrate 7, each of which is provided with a mounting electrode 6 made of copper or gold, is formed thereon, and the respective thermoelectric semiconductors 1 can be sequentially connected to each other by connecting the mounting electrodes 6 with the conductive film 3, respectively, through the respective coupling layers 5 formed of solder, conductive adhesive, anisotropic conductive adhesive, or etc.

Second option: Fig.3 and Fig.9-11
Next will be described the second variant of the method of coating by chemical means on the unit thermoelectric devices according to the invention with reference to Fig.3 and Fig.9-11.

In this embodiment uses a block 11 of thermoelectric device shown in Fig.3, as in the first embodiment, as for the other parts, such as metal film, conductive film, a bath for coating by chemical means, etc. uses the same constituent materials as the corresponding parts of the first version.

First formed of the metal film 2, on which a coating film by chemical means, on the end face 11a of the block 11 of thermoelectric device, pokazaneva metal film 2 is formed using a metal mask, etc., selectively only part of the end face 1A of the respective thermoelectric semiconductors 1, on one side, necessary to connect adjacent thermoelectric semiconductors 1 p-type and n-type with an insulating layer 4 disposed between them. More specifically, each of the metal films 2 are formed on the end face 4A of the respective insulating layers 4 arranged alternately, and part of the end face 1A of the respective thermoelectric semiconductors 1, on both sides of the end face 4A, extending thermoelectric semiconductors 1, adjacent to each other through the insulating layer 4 on the end face 11a of the block 11 of thermoelectric device so that the insulating layer 4 with the metal film 2 formed thereon, and the insulating layer 4 without the metal film 2 formed thereon are alternately on the end face 11a.

After that, the block 11 of thermoelectric device with a metal film 2 formed as described above, immersed in a bath for coating by chemical means, after which the reaction takes place deposition with the formation of films by chemical method on the surface of the respective metal films 2, and also reaction takes place academies film 2, formed on its side (in contact with her), and on the end face 1b, the opposite end face 1A, as shown in Fig.10. Thus, a conductive film 3 may be formed only on the end face 1A of the respective thermoelectric semiconductors 1, containing metal film 2 and the end face 1b, the opposite end face 1A.

After that, as shown by the dotted lines in Fig.10, the connecting layer made of a connecting material such as a conductive adhesive or solder, is formed by a method of printing on the end face 1b of the respective thermoelectric semiconductors 1 with the conductive film 3 is selectively formed thereon, thereby alternately connecting the respective thermoelectric semiconductors 1 p-type with the respective thermoelectric semiconductors 1 n-type. After heat treatment, the obtained thermoelectric device, in which the respective thermoelectric semiconductors 1 sequentially electrically connected to each other.

For the manufacture of thermoelectric devices through serial connection of the respective thermoelectric semiconductors 1, you can use the substrate 7 with a mounting electrode 6 made of copper or gold, formidoni unit 11 of thermoelectric device with a mounting electrode 6 on the substrate 7 through the respective coupling layers 5, formed from solder, conductive adhesive, anisotropic conductive adhesive, or similar, as shown in Fig.11, the respective thermoelectric semiconductors 1 can be interconnected in series, to complete the fabrication of thermoelectric device 21.

Unlike the above-described first option, the second option does not require the technological stage of removal of the metal film 2 formed on the end face 11a on one side of the block 11 of thermoelectric device, which can reduce the process of getting ready thermoelectric device. This allows to improve the performance of manufacturing thermoelectric devices.

Third option: Fig.3 and Fig.12 and 13
Next will be described a third variant of the method of deposition by chemical coating on the unit thermoelectric devices according to the invention with reference to Fig.3 and Fig.12 and 13.

In this embodiment uses a block 11 of thermoelectric device shown in Fig.11, as in the first embodiment, as for the other parts, such as metal film, conductive film, a bath for coating by chemical means, etc., that uses the same components of their material is to apply a film by chemical means, formed on the ends 11a, 11b of the block 11 thermoelectric device shown in Fig.3, on its opposite sides by spraying in vacuum, sputtering, or similar, as shown in Fig.12. Using a metal mask, etc., each metal film 2 is formed selectively only on the end face 4A and the end face 4b of the respective insulating layers 4, alternate or chess sequence, i.e., where the metal film 2 for connection of the respective thermoelectric semiconductors 1 p-type and the respective thermoelectric semiconductors 1 n-type, located on opposite sides of the respective insulating layers 4, with each other, resulting in the respective thermoelectric semiconductors 1 are connected in series. More specifically, each of the metal films 2 are formed in such a manner as to cover part of the end faces 1A or ends 1b of the adjacent thermoelectric semiconductors 1 with the corresponding insulating layers 4 located between them, and also on the end face 4A and the other end 4b of the respective insulating layers 4 alternately.

After that, the block 11 of thermoelectric device with the metal films 2 poguem flows on the surface of the respective metal films 2, as shown in Fig.13, and simultaneously the reaction of the deposition with the deposition of films by chemical flows on the end face 1A or 1b thermoelectric semiconductors 1 without the metal film 2, opposite to the end face 1A or 1b with a metal film 2 formed on its side (in contact with her). Therefore, a conductive film 3 can be formed only on the end faces 1A and 1b of the respective thermoelectric semiconductors 1 and the respective metallic films 2.

Because the respective thermoelectric semiconductors 1 block 11 thermoelectric devices are connected through the respective conductive film 3, it is possible to obtain a thermoelectric device 22, in which the respective thermoelectric semiconductors 1 are connected in series, without having to stages alternately connect adjacent thermoelectric semiconductors 1 by forming the connecting layer and the use of substrates, as in the first and second embodiments. Consequently, it is possible to reduce the process of getting ready thermoelectric device in comparison with the first and second options, and thus improve the performance of manufacturing thermoelectricity method of coating by chemical means on the unit thermoelectric devices according to the invention with reference to Fig.14-16 and Fig.18.

In contrast to the first, second and third variants, this variant uses a block thermoelectric device 15, in which the outer side surface of thermoelectric semiconductors 1 of the respective thermoelectric semiconductors 1, located at opposite ends in the direction of their arrangement, is not covered with the insulating layer 4 and still naked, as shown in Fig.14, but for other parts, such as metal film, conductive film, a bath for coating by chemical means, etc., used the same constituent materials as for the corresponding parts in the first embodiment.

In this embodiment, the metal film 2 is first formed on the end face 1A or 1b of the respective thermoelectric semiconductors 1 as well as in any of the above three options. In the case of forming the metal film 2 according to the third variant, each of the metal films 2, which can be applied film by chemical means, is formed on the end face 4A and the other end 4b of the respective insulating layers 4 block thermoelectric device 15 in turn to cover part of the end face 1A or end face 1b of the adjacent thermoelectric poluprovodnikovaya metal film 2 according to the first variant, it is formed, as shown in Fig.4. In the case of forming the metal film 2 according to the second variant, they are formed, as shown in Fig.18.

Then this unit is a thermoelectric device 15, fitted with a metal film 2, are immersed in a bath for coating by chemical means, after which the reaction takes place deposition with the formation of films by chemical method on the surface of the respective metal films 2, and simultaneously flowing the deposition reaction with the formation of films by chemical means at the ends 1A and 1b of thermoelectric semiconductors 1 formed on its side (in contact with) the metal film 2, and open on the outer side surface of the respective thermoelectric semiconductors 1, located on the outer sides of the block thermoelectric device 15 in the direction of arrangement of the respective thermoelectric semiconductors. Therefore, a conductive film 3 can be formed on the respective metal films 2, the ends 1A and 1b of the respective thermoelectric semiconductors 1, on their opposite sides and open on the outer side surface of the respective thermoelectric semiconductors formirovanii on the metal film 2, that allows you to sequentially connect the respective thermoelectric semiconductors 1.

Then, after forming the connecting layer 19 of the connecting material, such as conductive adhesive, solder, or etc., the unit thermoelectric devices with 15 formed thereon conductive film 3 mounted on the substrate 7 with a mounting electrode 6, formed therein, as shown in Fig.16. Appropriate conductive film 3 block 15 thermoelectric device while electrically connected with the mounting electrode 6, and the result is a thermoelectric device 23. In this case, in block 15 of thermoelectric device (Fig.15) can be increased contact area of the connecting layer 19, as a conductive film 3 is also formed on the outside of the outer side surface of the respective thermoelectric semiconductors 1, located at opposite ends in the direction of their arrangement. In the result, you can easily connect the mounting electrode 6 with the respective conductive films 3 as provided with additional terms for the connection.

In any of the four options above the surface of the block revogada film 3, preferably provides a roughened state by various methods, such as etching, sandblasting, grinding, or so on, This practice effectively contributes to improving the reliability of thermoelectric device, as it improves the adhesion properties of conductive films and allows you to create a more reliable conductive film.

In addition, in any of the four options above, it is preferable to clean alkaline degreasing, ultrasonic cleaning, clean running water, etc., between the respective process stages. This practice effectively contributes to improving the reliability of thermoelectric device, it further improves the adhesion between the respective conductive films 3 and the respective thermoelectric semiconductors 1.

Industrial applicability
The method of coating by chemical means according to the invention allows to form a conductive film made of metal having high electrical conductivity, by direct coating by chemical means even on the average of the product material, which is considered impossible a direct application of the conductive film chemical PU is to form a conductive film of a uniform thickness only at both ends of the respective thermoelectric semiconductors even at the unit thermoelectric devices, in which insulating layers and thermoelectric semiconductors are alternately through a very small interval in the range from several microns to several tens microns.

Thus, it can easily be formed on both end faces of the respective thermoelectric semiconductor conductive film of uniform thickness, the purpose of which is the provision of a thermoelectric device with a connecting layer for the respective thermoelectric semiconductors, and prevent the diffusion of tin, copper, etc. in the respective thermoelectric semiconductors, which improves production efficiency and reliability of thermoelectric device.


Claims

1. The method of coating by chemical means, characterized in that it comprises the formation of a metal film made of metal, which can be applied film by chemical means, on the part of the surface covered products or bringing mentioned metal in contact with a part of the surface covered products, made from a component of its material to which the coating is applied by chemical means not applicable, dive cover is Yesenia coating by chemical means and forming a film by chemical means on the surface of the coated product, not containing formed therein a metal film and a metal in contact with her.

2. The method according to p. 1, characterized in that as the average of the product of the material to which the coating is applied by chemical means is not applicable, use a metal or semiconductor, for which the coating is applied by chemical means not applicable.

3. The method according to p. 1, characterized in that, as of metal, which can be applied film by chemical means, using palladium, platinum or Nickel.

4. The method of coating by chemical means, characterized in that it comprises the formation of a metal film made of metal, which can be applied film by chemical means, on the part of the surface covered products or bringing mentioned metal in contact with a part of the surface covered products, made from a component of its material to which the coating is applied by chemical means is not applicable, the immersion of the coated products are formed thereon a metal film or in contact with the said metal in a bath for coating by chemical means and forming a film by chemical means on the entire surface of the coated articles containing mentioned Metallica, covering the metal film or metal, covered products, and immersion of the coated product in the tank for coating a chemical way again.

5. The method according to p. 4, characterized in that as the average of the product of the material to which the coating is applied by chemical means is not applicable, use a metal or semiconductor, for which the coating is applied by chemical means not applicable.

6. The method according to p. 4, characterized in that caused by chemical film is formed so that it had a two-layer structure consisting of two metal films.

7. The method according to p. 4, characterized in that, as of metal, which can be applied film by chemical means, using palladium, platinum or Nickel.

8. The method of coating by chemical means, characterized in that it comprises the formation of a metal film made of metal, which can be applied film by chemical means, on the part of the surface covered products or bringing mentioned metal in contact with a part of the surface covered products, made from a component of its material to which the coating is applied by chemical means not applicable, dive cover Jenia coating by chemical means, moreover, the coated product is made of several kinds of constituent materials.

9. The method according to p. 8, characterized in that as the average of the product of the material to which the coating is applied by chemical means is not applicable, use a metal or semiconductor, for which the coating is applied by chemical means not applicable.

10. The method according to p. 8, characterized in that, as of metal, which can be applied film by chemical means, using palladium, platinum or Nickel.

11. The method of coating by chemical means, characterized in that it comprises the formation of a metal film made of metal, which can be applied film by chemical means, on the part of the surface covered products or bringing mentioned metal in contact with a part of the surface covered products, made from a component of its material to which the coating is applied by chemical means not applicable, and the immersion of the coated products are formed thereon a metal film or in contact with the said metal in a bath for coating by chemical means, and the coated product is a block of thermoelectric devices.

12. The method according to p. 10, otlichayushiesya Nickel.

13. The method of coating by chemical means, characterized in that it comprises the formation of a metal film made of metal, which can be applied film by chemical means, at one end of the unit thermoelectric devices are made as a single unit from a variety of thermoelectric semiconductor with an insulating layer interposed between them, respectively, the immersion unit thermoelectric devices formed thereon a metal film in a bath for coating by chemical means and forming a film by chemical means on the metal film and the other end of the respective thermoelectric semiconductors on the side opposite to the end face, on which was formed a metal film, removing the metal film and the part caused by chemical film covering the metal film, the immersion unit thermoelectric devices in a bath for coating by chemical means again and formation of a chemical through the film at the ends of the respective thermoelectric semiconductors, where you removed the metal film.

14. The method according to p. 13, characterized in that, as of metal, which is different to those that use an array of thermoelectric devices having open outer side surface of the respective thermoelectric semiconductors, located at opposite ends in the direction of the layout of the respective thermoelectric semiconductor, and is formed by chemical film also open the outer lateral surfaces of the respective thermoelectric semiconductors at opposite ends in coating film by chemical means.

16. The method according to p. 13, characterized in that before applying the film to chemically block thermoelectric device to the end of the block additionally give roughness.

17. The method according to p. 13, characterized in that before or after application of the film by chemical means on the unit thermoelectric devices additionally cleaned.

18. The method according to p. 13, characterized in that the insulating layer using an insulating resin.

19. The method of coating by chemical means, characterized in that it comprises a cast metal, which can be applied film by chemical means, in contact with a part of at least one of the ends of the respective thermoelectric semiconductor block thermo the insulating layer, located between them, respectively, the immersion unit thermoelectric devices with metal in contact with it in the bath for coating by chemical means, and the formation of a chemical through the film on the whole surface of the respective thermoelectric semiconductors, except the part which is in contact with the said metal, removing metal in contact with the respective thermoelectric semiconductors, with the last dive of the unit thermoelectric devices in a bath for coating by chemical means again and formation of chemical by film on the side ends of the respective thermoelectric semiconductors were in contact with the said metal.

20. The method according to p. 19, characterized in that, as of metal, which can be applied film by chemical means, using palladium, platinum or Nickel.

21. The method according to p. 19, characterized in that use an array of thermoelectric devices having open outer side surface of the respective thermoelectric semiconductors, located at opposite ends in the direction of the layout of the respective thermoelectric polyploidy thermoelectric semiconductors at opposite ends in coating film by chemical means.

22. The method according to p. 19, characterized in that before applying the film to chemically block thermoelectric device to the end of the block additionally give roughness.

23. The method according to p. 19, characterized in that before or after application of the film by chemical means on the unit thermoelectric devices additionally cleaned.

24. The method according to p. 19, characterized in that the insulating layer using an insulating resin.

25. The method of coating by chemical means, characterized in that it comprises the formation of a metal film made of metal, which can be applied film by chemical means, at the end of the respective insulating layers located on the side of one of the ends of the unit thermoelectric devices are made as a single unit from a variety of thermoelectric semiconductors with appropriate insulating layers arranged between them, and the metal film is formed so that it stretched to the corresponding insulating layers and a portion of the surface of the respective end faces of thermoelectric semiconductors adjacent to each other through corresponding spaced alternately with insulating layers, pogruzheny the coating by chemical means and forming a film by chemical means on the metal film and on both ends of the respective thermoelectric semiconductors with formed on the side surface of the metal film.

26. The method according to p. 25, characterized in that, as of metal, which can be applied film by chemical means, using palladium, platinum or Nickel.

27. The method according to p. 25, characterized in that use an array of thermoelectric devices having open outer side surface of the respective thermoelectric semiconductors, located at opposite ends in the direction of the layout of the respective thermoelectric semiconductors, and chemical form by the film and also on the open outer side surfaces of the respective thermoelectric semiconductors at opposite ends in coating film by chemical means.

28. The method according to p. 25, characterized in that before applying the film to chemically block thermoelectric device to the end of the block additionally give roughness.

29. The method according to p. 25, characterized in that before or after application of the film by chemical means on the unit thermoelectric devices additionally cleaned.

30. The method according to p. 25, characterized in that the insulating layer using an insulating resin.

31. The method of coating by chemical means, characterized in that it includes all the bottom, or on the other end of the respective insulating layers alternately on both ends of the unit thermoelectric devices are made as a single unit from a variety of thermoelectric semiconductors with appropriate insulating layers arranged between them, and the metal film is formed so that it stretched to the corresponding insulating layers and a portion of the surface of the respective ends of thermoelectric semiconductors adjacent to each other through the respective insulating layers, the immersion unit thermoelectric devices formed thereon a metal film in a bath for coating by chemical means and forming a film by chemical means on the metal film, and both ends of the respective thermoelectric semiconductors with metal film, formed on part of the surface of one and the other of the ends.

32. The method according to p. 31, characterized in that, as of metal, which can be applied film by chemical means, using palladium, platinum or Nickel.

33. The method according to p. 31, characterized in that use an array of thermoelectric devices having open outer side surface of componency respective thermoelectric semiconductors and form a chemically film also open the outer lateral surfaces of the respective thermoelectric semiconductors at opposite ends in coating film by chemical means.

34. The method according to p. 31, characterized in that before applying the film to chemically block thermoelectric device to the end of the block additionally give roughness.

35. The method according to p. 31, characterized in that before or after application of the film by chemical means on the unit thermoelectric devices additionally cleaned.

36. The method according to p. 31, characterized in that the insulating layer using an insulating resin.

37. The method of coating by chemical means, characterized in that it comprises the formation of a metal film made of metal, which can be applied film by chemical means, on the part of the surface covered products or bringing mentioned metal in contact with a part of the surface covered products, made from a component of its material to which the coating is applied by chemical means is not applicable, the immersion of the coated products are formed thereon a metal film or in contact with the said metal in the bath on the wow products containing the aforementioned metal film or the metal, removing the metal film or metal and part of the film caused by chemicals, covering the metal film or metal, covered products, and immersion of the coated product in the tank for coating by chemical means again, and covered the product is made of several kinds of constituent materials.

38. The method according to p. 37, characterized in that as the average of the product of the material to which the coating is applied by chemical means is not applicable, use a metal or semiconductor, for which the coating is applied by chemical means not applicable.

39. The method according to p. 37, characterized in that, as of metal, which can be applied film by chemical means, using palladium, platinum or Nickel.

40. The method of coating by chemical means, characterized in that it comprises the formation of a metal film made of metal, which can be applied film by chemical means, on the part of the surface covered products or bringing mentioned metal in contact with a part of the surface covered products, made from a component of its material to which the coating chemistry is whether in contact with the said metal in a bath for coating by chemical means, and the formation of a chemical through the film on the whole surface of the coated product, containing metal film or the metal, removing the metal film or metal parts caused by chemical film covering the metal film or metal, covered products, and immersion of the coated product in the tank for coating by chemical means again, and the coated product is a block of thermoelectric devices.

41. The method according to p. 40, characterized in that, as of metal, which can be applied film by chemical means, using palladium, platinum or Nickel.

42. The method of coating by chemical means, characterized in that it includes the preparation of covered products, made of metal or semiconductors, for which the coating is applied by chemical means not applicable, and insulators, forming a metal film made of metal, which can be applied film by chemical means, on the part of the surface covered products or bringing mentioned metal in contact with a part of the surface of the coated product, the immersion of the coated products are formed thereon a metal film or in contact with the said metal in a bath for coating by chemical means, and the formation of chemical by I, as insulators using an insulating resin.

44. The method according to p. 42, characterized in that, as of metal, which can be applied film by chemical means, using palladium, platinum or Nickel.

 

Same patents:

The invention relates to thermoelectric devices and is intended for use in a variety of thermoelectric cooling and heating: air conditioners, refrigerators, thermostats, devices, cooling units and components of electronic equipment, as well as in thermoelectric generators DC

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The invention relates to air-conditioning, mainly for conditioning the cabin of a vehicle

The invention relates to refrigeration devices using the Peltier effect

The invention relates to thermoelectric cooling devices that allow direct conversion of electric energy into thermal energy, operating on the Peltier effect, and specifically to the design of thermoelectric module (TAMO) and method of its manufacture

The invention relates to thermoelectricity and thermoelectric generator heat exchangers, mainly on organic liquid or gaseous fuel and operated under repeated thermal Cycling
The invention relates to the preparation of the surface of ferrites, ceramics and territoriality under the metal coating on the details of ferrites, ceramics and territoriality and can be used in the radio industry, instrumentation, aviation industry

The invention relates to the field of deposition of thin metal coatings on metal parts, specifically for the application of gold, silver, platinum, palladium, Nickel, mercury, indium, bismuth and antimony, and can be used in microelectronics, electrical and reflective devices, and also in the jewelry industry

FIELD: metallurgy.

SUBSTANCE: invention refers to electrolytic metallurgy and can be used at preparation of phosphonic complex electrolytes for electrochemical and chemical copper, zinc, nickel and cobalt coating. The method includes solution of such compounds in water, which are the source of cations of metals, and solution of a compound, which is the source of anion of nitrilotri(methylene phosphonic) acid; at that as sources of cations of metals and anion of nitrilotri(methylene phosphonic) acid crystal nitrilotri-(methylenphosphonates)(2-) of metals are used from the group containing copper, zinc, nickel and cobalt.

EFFECT: facilitates preparation of complex phosphonic electrolytes and solutions of specified composition and concentration not containing undesirable impurities, it also facilitates upgraded processibility of the method of preparation of electrolytes and solutions, and expands an arsenal of existing methods of preparation of nitrilotri-(methylenphosphonates) electrolytes and solutions for coating with metals and alloys.

5 cl, 6 ex

FIELD: chemistry.

SUBSTANCE: invention refers to methods formation of component coating by chemical conversion for dielectrics, semiconductors and electronegative metals (iron, aluminium, titanium and their alloys), as well as combined ceramic-metal materials and can be used in radio engineering industry, in instrument engineering and for manufacturing of printed-circuit boards and decoration of wax, plastisol and other products. The first version of the method involves component surface processing in sorption stabilising solution in ratio as follows, g/l: SiO2 - (35-45)×10-3, Al2O3 - (0.5-10)×10-3, MgO - (0.5-10)×10-3, HF - (0.5-1)×10-3, water - the rest. It is followed with sensitisation, activation in solution containing palladium chloride and hydrochloric acid, and metal plating. The second version of the method involves sensitisation of component surface in sorption stabilising solution in ratio as follows, g/l: SiO2 - (35-45)×10-3, Al2O3 - (0.5-10)×10-3, MgO - (0.5-10)×10-3, HF - (0.5-1)×10-3, water - the rest.

EFFECT: improved plating quality ensured with higher catalytic activity of processed surface and reduced palladium content in solution for activation.

2 cl, 8 tbl, 8 ex

FIELD: technological processes.

SUBSTANCE: invention is related to technology for production of metalised woven and nonwoven materials, and may be used for production of catalysts, and also for production of decorative and finishing materials. Method includes previous chemical activation of coated material surface, using as activator glyoxal acid and/or oxalic acid. Then chemical metallisation is carried out, which is realised from solution containing bluestone. Stabiliser used is tetraethylene glycol, and reducer - glyoxal. Sodium hydroxide is used in solution to maintain required acidity.

EFFECT: invention provides for production of metalised dispersed woven and nonwoven materials using simplified technology, with simultaneous cheapening and provision of production safety due to use of proposed ingredients and their certain ratio.

2 ex

FIELD: metallurgy.

SUBSTANCE: invention refers to chemical application of metal coating. The procedure consists in bringing substrate into contact with a bath containing a surface active substance, reducer and metal chosen from a group Ag, Cu, Pd and Co. Also temperature of the bath is higher, than temperature of dimness of solution present in the bath in form of at least two phases. The bath contains water solution of silver salt, substituted alkylene-oxide compound, boric acid, reducer and complex former. The procedure includes silicon surface etching, immersion of silicon surface into the above described bath, leaving silicon surface till silver coating forms on it and extracting silicon surface coated with silver from the bath.

EFFECT: increased visual reflex and electrical conductivity.

34 cl, 2 ex

FIELD: metallurgy.

SUBSTANCE: in the method parts of copper or its alloys are treated in a solution containing 6-10 wt % H2SO4, 4-8 wt % Na2Cr2O7 and water - balance, for 10-60 min., afterwards flushed with water. Further parts are etched in 18-25% solution of sulfuric or hydrochloric acid, after which parts without preliminary washing are treated in a working aqueous solution, containing sulfuric or hydrochloric acid, thiourea, stannum bichloride dihydrate, previously soaked at 17-30°C for 1-30 days.

EFFECT: method makes it possible to produce high-quality tin coatings with increased corrosion resistance on parts of copper or its alloys.

3 cl, 6 ex

FIELD: chemistry.

SUBSTANCE: method contains the following stages: a) physical processing to reduce the surface tension of a substrate before metallisation; b) non-electrolytic metallisation of the substrate surface, processed at stage a) by sputtering one or several redox solutions in the form of aerosol(s), and c) production of a decorative layer on the metallised surface. A device contains a module of physical processing, selected from the following types of processing: processing by flame, processing by crown discharge, processing by plasma and their combinations, to reduce the surface tension, a module of non-electric metallisation and a module of a decorative layer production. The claimed method is used to obtain such products as: vials from hollow glass, in particular, for cosmetic purposes, automobile components, components for household electronics or for the application in aviation, or components for electronics in the form of an electricity-conducting path, antennas of radio-frequency identification or a component with an electromagnetic coating for screening.

EFFECT: invention makes it possible to process a lot of substrates, provides quality adhesion of layers and makes it possible to obtain decorative coatings.

10 cl, 4 dwg, 4 ex

FIELD: chemistry.

SUBSTANCE: invention relates to application of metal layers of coating and can be used in production of semiconductors. Claimed is composition for application of metal layer, which contains source of metal ions and at least one suppressing agent, which is obtained by reaction of amine compound, containing active functional amino groups, with mixture of ethylene oxide and at least one compound, selected from C3 and C4 alkylene oxides, to obtain random copolymers of ethylene oxide and at least one more of C3 and C4 alkylene oxides, with said suppressing agent having molecular weight 6000 g/mol and higher, and content of ethylene oxide in copolymer of ethylene oxide and C3-C4 alkylene oxide being from 30 to 70%. Also claimed is method of electrolytic application of metal layer on substrate by contact of electrolytic bath for application of metal layer, containing said composition, with substrate, and creation of current density in substrate for period of time, sufficient for application of metal layer on substrate.

EFFECT: inventions make it possible to obtain coating layer providing voidless filling of surface elements of nanometer and micrometer scale.

15 cl, 12 dwg, 8 ex

FIELD: chemistry.

SUBSTANCE: invention relates to application of metal layers of coating and can be used in production of semiconductors. Claimed is composition for application of metal layer, which contains source of metal ions and at least one suppressing agent, which is obtained by reaction of amine compound, containing at least three active functional amino groups, with mixture of ethylene oxide and at least one compound, selected from C3 and C4 alkylene oxides, to obtain random copolymers of ethylene oxide and at least one more of C3 and C4 alkylene oxides, with content of ethylene oxide in copolymer of ethylene oxide and C3-C4 alkylene oxide constituting from 30 to 70%. Also claimed is method of electrolytic application of metal layer on substrate by contact of electrolytic bath for application of metal layer, containing said composition, with substrate, and creation of current density in substrate for period of time, sufficient for application of metal layer on substrate.

EFFECT: inventions make it possible to obtain coating layer providing voidless filling of surface elements of nanometer and micrometer scale.

14 cl, 15 dwg, 1 tbl, 12 ex

FIELD: process engineering.

SUBSTANCE: invention relates to sealing of micro holes in metallic coating produced by chemical reduction. This process includes the application of metallic coating ply on substrate by chemical reduction comprises defects like micro holes which allow fluid communication between substrate and ambient medium. Ply of setting epoxy sealant is sprayed over said metallic coating ply to fill aforesaid defects. Note here that said setting sealant features viscosity of 20-1200 cP at ambient temperature. Setting of applied sealant is performed and notable portion of applied sealant cover ply is removed to get the article. This article includes the metallic coating ply on substrate produced by chemical reduction with no defects like micro holes which allow fluid communication between substrate and ambient medium.

EFFECT: higher mechanical strength and protective properties, ease of processing.

10 cl, 5 dwg

FIELD: chemistry.

SUBSTANCE: invention relates to instrument-making and radio electronic industry and can be used in conditions where there is need for a top coat on a high-planarity printed-circuit board or longer period of preserving the capacity for soldering, or corrosion protection of articles made of copper and copper alloys using tin-containing coatings, or as a resistive coating in copper and copper alloy etching processes. The aqueous solution for chemical deposition of tin coatings on a copper or copper alloy surface has components in the following ratio, g/l: tin dichloride dihydrate - 2-20, thiourea - 5-85, sulphuric acid - 5-75, fluorides - 0.1-100. The solution may contain ammonium fluorides and alkali or alkali-earth metal fluorides.

EFFECT: invention enables to obtain coatings on a copper or copper alloy surface, having improved appearance, physical-chemical and functional properties.

4 cl

Lighting fixture // 2247896

FIELD: lighting fixtures with built-in energy source.

SUBSTANCE: proposed device has filament lamp and thermoelectric battery whose cold junction is provided with water reservoir. Mounted above water reservoir is reservoir filled with salt at low cryohydrate dissolving temperature; provision is made for adding salt to this reservoir.

EFFECT: increased temperature differential between junctions.

1 dwg

FIELD: thermal-to-electrical energy conversion.

SUBSTANCE: proposed generator has heat load made in the form of variable-section monolithic heat-transfer plate. Attached to heat load by means of hold-down unit are thermoelectric batteries and heat sinks mounted symmetrically on effective sides of heat load. Hold-down unit is made in the form of bent stud threaded on both ends and passed via through holes in heat-sink base and in heat-transfer plate. Base of the latter is provided with semicylinder mounted so that its longitudinal axis is perpendicular to vertical symmetry axis of heat-transfer plate. Through hole of the latter receiving bracing stud is of rectangular section. Stud is made of material whose coefficient of thermal expansion is lower than that of generator mechanical design components being braced, Flexible heat transfer between heat-transfer plate and thermoelectric battery is made in the form of lead foil plated with tin on both sides.

EFFECT: improved design.

6 cl 6 dwg

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