Electronic component and application contained in the protective structure


The invention relates to electrical engineering, in particular, is designed to protect electronic components, in which a significant portion is not closed the case. Electronic component includes a dielectric layer, which is made on the substrate, a conductive surface is performed on the dielectric layer, and the conductive protective structure placed in the plane above the current-carrying surfaces so that a conductive surface is not completely closed protective structure and protective structure arranged along the intermediate sections (Z), which are made between the conductive surfaces. The technical result of the invention is to enhance the protection from static discharge. 6 C.p. f-crystals, 6 ill.

The invention relates to electronic components and the application executed in the electronic component structure as protection against electrostatic discharge. Up to the present time commonly used electronic components in the housing, which are output wires for power supply and supply and/or removal of signals. Among these electronic components are particularly sensitive to electrostatic discharge those components that sstuwa at it from the outside potential difference, happen transfers charge, which then lead to overvoltage in one or more so-called switched capacitor so that there is a direct discharge between the individual plates, the so-called switched capacitor, which usually leads to destruction of the component. Such electrostatic charge, which is then discharged to the destruction may occur as a result of contact, and electronic laboratory from it are protected, for example, the fact that the components are placed on a sponge rubber. In addition, personnel who are in electronic laboratories in contact with these components is appropriate grounding strip, so that when the contact he receives no charge. For the manufacture of the mounting device, in which the components are mounted on a printed circuit Board, provided appropriate measures.

When components are built into the scheme, then, as a rule, there is only a slight danger of destruction of the component due to electrostatic discharge. But this can result in errors when switching or due to malfunction of other components. To avoid this, electronic components, usually equipped with additionally the and circuit ESD), and entered overvoltage. Typically, we are talking about the surge in the discharge schemes.

The main disadvantage of this protection scheme ESD is that it "stands square chips", which does not serve the function of the electronic component. Another disadvantage of such protection under the ESD scheme is that it often changes the function of the component without this protection scheme ESD. Often the protection circuit ESD causes the opposite effect on the sensitivity and/or dynamic component.

Currently, new electronic components do not have a closed shell, so the details of the chip are open to the outside. These new electronic components are, for example, so-called "Chip sizes packages (CSP), in which chip your contacts is connected directly to the circuit Board. In addition, various sensors are increasingly run as semiconductor components. As in CSP, and when used as a sensor component has, both in General and at least partially relatively large surface of contact with the environment.

In such cases required intensive measures for protection from static discharge. Such components are also fingerprint sensors, which consist of a matrix of large directly to the component. Especially in this case can be static, as in normal use of such a sensor is invalid, when the finger before the application was grounded for discharge. In portable devices, which provides a fingerprint sensor, for example in the device, easy to use, the danger remains that the carrying device causes electrostatic discharge.

The basis of the invention is the creation of an electronic component, in which even when a significant portion is not closed housing provides protection for ESD scheme.

Due to the fact that is provided by the conductive protective structure, which is located in a plane above the conductive surfaces and leaves a conductive surface free, provided that as a result of joining the protective structure, it has the effect of a Faraday cage. The most simple is to protect against electrostatic discharge.

Other preferred embodiments of the specified in the dependent claims.

Due to the fact that there is an intermediate area of the conductive surface is not covered with the protective structure. Perform protect skotniki, which act as a lightning conductor.

The use of tungsten for the manufacture of protective structure ensures its durability.

A protective structure width of 1-5 μm is particularly useful. In addition, a protective structure in the form of a lattice combines the ease of fabrication and high performance as a protection circuit ESD at minimum cost of material.

The invention is illustrated below with reference to the drawings with the help of examples. Shown: Fig.1 - the first exemplary embodiment in accordance with the invention, Fig.2 - the second exemplary embodiment in accordance with the invention, Fig.3 - examples of execution represented in Fig.1 and 2, a top view, Fig. 4 is a preferred embodiment of shown in Fig.1 exemplary embodiment, Fig. 5 is another preferred embodiment of the invention of example, is shown in Fig.1, and Fig. 6 is a significant technological processes of manufacturing the electronic component according to the invention.

In the following description, the same position mean the same thing.

In Fig.1 schematically shows an electronic component in accordance with the invention. It on the surface 1 of the chip is a dielectric layer 2, which predomi conductive surfaces. Such conductive surfaces 4 and 4' shown in the example is executed directly on the dielectric layer 2, and the intervals between the conductive surfaces 4 and 4' is filled with oxide 3, which separates the conductive surface from above nitride layer 5.

In the present exemplary embodiment, the conductive surface 4 are separate components dactilografierea sensor. Each conductive surface 4 is a surface condenser, while the finger forms the opposite surface of the condenser. The conductive surface 4' represents, for example, conductors, and connections are not depicted. Oxide 3 also made the nitride layer 5, which may consist of several layers. In the nitride layer 5 is made of a flute filled with tungsten. The system is designed so that the finger F, the imprint of which must be removed and which should be applied on the surface of this structure, formed with the conductive surfaces of the capacitor 4, as the structure of the tungsten 6 on the intermediate spaces Z is located between the conductive surfaces 4. If the finger is electrically charged, it will be zapolneniya dactilografiere sensor has the appropriate structure, in which the oxide surrounding the conductive surface 4 has a thickness of about 250 nm, the nitride - 1500 nanometers, the depth of the grooves tungsten structure 6 is approximately 370-700 nanometers and the width of the grooves is approximately 2 microns.

In Fig.2 shows the application of the tungsten structure 6 in the electronic component for mounting on the surface, as shown in S. In this case, the conductive surface 14 made of an oxide-free in the direction of the surface of the protective nitride 5. Formed thereby free space 7 is used to contact the conductive surfaces 14 serving as pads, when the mounting surface on the circuit Board. Free space 7 is filled with solder or conductive adhesive. And in this case, the surface is made of tungsten structure 6, which when made use of in assembled position will not approach a charged finger, but in the normal use of the component mounted as a CSP, it is possible that the PCB surface is electrostatically charged. Conductive protective structure 6 made in this case as tungsten structure, when it is Sarac, as a Faraday cage. The use of tungsten is not necessary, but compared to other currently used in semiconductor equipment connections aluminum tungsten has multiplied by a factor of 6 maximum current density, and melting point of tungsten, component 3410oWith significantly above the melting point of the received aluminium alloy (AlSiCu/660oC).

As shown in Fig.1, and in Fig.2, tungsten structure 6 provided over the conductive surfaces 4', located in one plane with the conductive surfaces 4. It is selected because the conductive surface 4' must not be accessible from the outside.

This is again shown in Fig.3 in top view. In this case, the depicted conductive surface 4 and 14. In this drawing refused mask layers. In other words, the conductive surface 4 is depicted in the form of pads 14, as described with reference to Fig.2, and the plate of the capacitor 4 with reference to Fig.1. Between the conductive surfaces 4 and 14, when viewed from above, is made conductive tungsten structure 6 in the form of a lattice, and she directed perpendicularly to the side surfaces of the conductive surfaces 4 and 14. Bugtracker formed protrusions or edges, which are very well suitable for protection against electrostatic discharge. This lattice structure is thus on the edges to the conductive surfaces 4 the same effect as lightning arresters. Between the conductive surfaces 4 and 14 are depicted as shown in Fig.1 and 2, the conductive surface 4', which is covered with a tungsten grating, since the conductive surface 4' should not be available in the upper direction.

In Fig.4 and 5 depict a preferred embodiment of the invention, in particular as dactilografierea sensor. Thus the same components are provided with identical positions. Dactilografiere sensor, shown in the cut, consists of a substrate 10, on which surface can be made active structure in the form of integrated circuits, but the present invention does not necessarily need to be present. Above it is a part of the surface of the substrate structure of the polycrystalline silicon 9, which on its part is covered with a layer of boron-phosphorus-silicon-oxide-glass 8. Above it is the first layer of metallization with unmarked more tracks metallization, which is covered with dielectric layer 2. It's the same diele is 2. The whole component is surrounded by a housing 11, which leaves a free one surface of the component, but so bent on the edge that lies on the surface.

According Fig. 4 from the surface of the completed end-to-end connection through all of the above layers to the substrate, which is connected to ground. Part of the end-to-end connection, located on the surface, electrically connected with tungsten structure 6. Thus, the implemented system, which corresponds to the Faraday cage. Surrounding the free surface of the chip frame 11 provided with a frame ground 12.

In contrast, according to Fig.5 end-to-end connection through all layers are not provided. In the example pictured here performing tungsten structure 6 is electrically connected to the frame ground 12. In the rest of the lower structure are interconnected at the regional site end-to-end connection and the ground connection through the substrate. In this depicted example, thus, the Faraday cage.

In the variant shown in Fig.5 example of connection between the frame ground and tungsten structure 6 can be implemented using a conductive adhesive. This does not require the established levels of 6. Quite like the image in Fig.4 to connect the frame ground 12 with a tungsten structure 6 through the conductive adhesive bonding (see Fig.5A).

According Fig.6 schematically shows the implementation of tungsten structure. First is planarization patterns formed from conductive surfaces 4 and 14 and 4' and surrounding the surfaces of oxide 3. This structure is applied to the nitride treated lithographic method, followed by etching of the nitride to obtain the above-described grooves. Then a CVD method (Chemical Vapor Deposition) is applied to the tungsten. Put thus on the entire surface of the tungsten again removed to the height of the layer of nitride. This is depicted in the first and second different deletion methods lead to different curl patterns. In the lower part of Fig.6 in contrast to the upper part of the original structure of the conductive surfaces and the surrounding conductive oxide surface is so flat that forms a flat layer of nitride.

For tungsten patterns depending on the applied technology can provide a width of 1-10 μm. In CSP components that are not exposed to extreme occasion, when electrostatically charged palesti fully tungsten.

However, the above invention is not limited to semiconductor components. It can be applied equally and in future technologies, such as electronic circuits polymeric switches. The invention is of particular advantage in the case when the components are freely available, as, for example, sensors, and dactilografierea sensors are only one example. This application can be predicted today, for example, for use in cards with an embedded microchip that require durable, flexible and protected from environmental influences dactilografierea sensors to ensure reliable identification of the user.


1. Electronic component containing a dielectric layer (2) made on a substrate (10), a conductive surface (4; 14), performed on the dielectric layer, and the conductive protective structure (6) is placed in a plane above the conductive surfaces (4; 14) in such a way that a conductive surface (4; 14) is not completely closed protective structure (6), and protective structure (6) is placed along the intermediate sections (Z), which are made between tocop which is oblique to the direction of extension of the intermediate segment (Z) and on the edge of the intermediate segment (Z) changes its direction so that it does not extend beyond the intermediate segment (Z), or simply changes its direction at the edge of the intermediate area (Z).

3. Electronic component under item 1 or 2, in which the protective structure (6) is made of tungsten.

4. Electronic component according to one of paragraphs.1-3, in which the protective structure (6) has a width of 1-5 mm.

5. Electronic component according to one of paragraphs.1-4, in which the protective structure (6) is made in the form of a grid.

6. Electronic component according to one of paragraphs.1-5, in which one of the conductive surfaces (4; 14) is part of a single sensing element.

7. Electronic component according to one of paragraphs.1-6, in which the protective structure (6) is arranged to use as a protective device against electrostatic discharge.


Same patents:

The invention relates to electrically-addressable non-volatile permanent memory

The invention relates to electrically-addressable non-volatile permanent memory

The invention relates to electronic devices, and more specifically concerns a powerful hybrid integrated circuit, and can be used when designing a powerful hybrid integrated circuits and enclosures of power semiconductor devices

Microwave module // 2158044

The invention relates to electronic equipment, in particular to multilayer hybrid integrated circuit microwave and millimeter-wave ranges, and can be used in semiconductor microelectronics

The invention relates to a biometric sensor, containing a chip and a housing in which is inserted the chip, and method of its manufacture

The invention relates to automation, in particular to methods of selecting objects, and can be used in expert systems for diagnostics of technical, biological, chemical and other objects

The invention relates to methods and devices for the automated accounting and control of moving objects in business

The invention relates to a device for controlling the identification of objects in text documents

The invention relates to devices and methods of identifying a genuine series of images

The invention relates to a method of identification according to the parameters of the user's palm
The invention relates to methods of identifying various objects in order to establish their authenticity

The invention relates to the identification and control of access to protected objects and relates to a method of monitoring the integrity of the optical seals, which consists in the illumination optical radiation through the transparent areas of the seal information element of the seal of registration of the image information item of a seal in the form of the distribution of illumination on the surface of the photodetector device, the formation of the reference optical image information item fillings and compare it with that obtained in the control process of the control optical image of an information item fillings

FIELD: experimental astrophysics.

SUBSTANCE: method includes producing set of images serial in time and analysis thereof. On basis of this set a dispersion map is built, vale in each point of which equals dispersion of brightness values in respective point of whole images et, on dispersion map points are found, dispersion values of which surpass average dispersion on map for given value, and on basis of these points changing objects are identified.

EFFECT: higher effectiveness.