Duplex noise generator

 

The invention relates to radio engineering microwave and can be used as a measure of the noise temperature with an accurate noise measurements: small levels of noise temperature signal sources, small losses and noise parameters of a two-port, as well as for embedded control systems for various purposes. Duplex noise generator contains emitter noise with two outputs made in the non-semiconductor device with Schottky barrier (PPBS), valve, switch, and two loads, and the first emitter output noise PPBS connected to the input of gate whose output is the output two-level noise generator, a second emitter output noise PBX connected through the switch either to the first load or the second. DGS has two stationary States with output levels of noise temperature T1(0,2...0,5)To and T2(1...3)To, switchable external command. The technical result is to increase the operational characteristics of the device. 1 Il.

The invention relates to radio engineering microwave and can be used as a measure noise temperature (PCS) with accurate noise measurement is Snykov, and for built-in test and calibration systems for various purposes.

In known two-tiered noise generator (DGS) [1] the possibility of reducing the level of T1 is limited by the losses made by a directional coupler connected between the emitter of a "cold" noise and valve, ensures the independence of the characteristics DGS from external loads.

The closest technical solution (prototype) is DGS [2], in the design which eliminated redundant circuit elements in the output circuit of the cascade radiation "cold" noise and thereby provided the conditions for the complete realization of the potential used field-effect transistor. The disadvantage of this solution is that the provision of the second (high temperature) noise level achieved by the use of additional active nodes (noise generator to spent or amplifier) that significantly affects the size, power consumption and reliability of the device.

The aim of the invention is to improve the operational characteristics of the device by eliminating unnecessary active nodes and optimize the generator mode noise while maintaining the other advantages of the prototype.

Those requirements can be met predlagayuschie noise 4, made in the non-semiconductor device with Schottky barrier (PBS) and having two outputs - one output-side shutter, and the second output-side drain valve 5, techplace switch 3 and two loads 1 and 2 are connected respectively to the first and second shoulders of the switch. The second emitter output noise PBS 4 is connected to the common (third) arm of the switch 3 and, depending on the provisions of the latter, alternately connects either to the load 1 or load 2; the first emitter output noise PBS 4 is connected to the input of gate 5 whose output serves as the output two-level noise generator.

The proposed construction of a two-tiered noise generator works as follows: when the external command control switch 3 connects the second emitter output noise PBS 4 load 1, its parameters determine the emitter noise 4 mode corresponding to the low-temperature radiation noise, and output DGS through the valve 5 receives the noise power to the noise temperature T1(0,2...0,5)To; when the switch 3 connects the second emitter output noise PBS 4 load 2, its parameters determine the emitter of the noise mode is suitable is 2(1...3)To. Excessive increase in the level of T2 leads to the shift of the mode PBS in the zone of instability.

Thus, when the maximum simplification of the circuit, DHS has two stationary States with output levels T1(0,2...0,5)To and T2(1...3)To, switchable external command.

Sources of information 1. RF patent 2127483. Topolnicki Century. N. Duplex noise generator. // Bull. 7, 1999.

2. RF patent 2168847. Kamenetz Y. A., Topolnicki C. N., Usdin R. I. Duplex noise generator. //.......

Claims

Duplex noise generator containing emitter noise with two outputs made in the non-semiconductor device with Schottky barrier (PPBS) valve, techplace switch controlled by external commands, and the first load, the parameters which determine the emitter noise mode corresponding to the low-temperature radiation noise, characterized in that in the scheme entered the second load, the parameters which determine the emitter noise mode corresponding to the high-temperature radiation noise level, and the first emitter output noise PPBS connected to the input of gate, the output of which is what recluctant or to the first load, or the second load.

 

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