The optical memory element

 

(57) Abstract:

The invention relates to devices used in electronic devices as storage devices. The optical memory element includes a heterostructure n-InSb-SiO2-P-Si, obtained by deposition of polycrystalline films of n-InSb substrate of oxidized silicon at 300oWith subsequent thermal recrystallization. The effect of the optical memory is in it ~ 40-50% at the temperature of liquid nitrogen in the near IR region of the spectrum.

The invention relates to the field of devices used in electronic devices as storage devices.

Existing elements of the optical memory based heterojunctions ANDIIBVIandIIIBVgive the effect of an optical memory up to 30-40% in the visible region of the spectrum [1] .

The optical memory element based heterostructures n-InSb-SiO2-P-Si, obtained by thermal recrystallization film n-InSb substrate of oxidized silicon is in the near IR spectral region 27 μm, the effect of optical memory ~ 4050% at the temperature of liquid nitrogen. The ratio of the optical memory is ~ 104105.

The optical memory element izhota n-InSb substrate of oxidized silicon at a temperature of ~300oWith subsequent thermal recrystallization. For P-Si and the film n-InSb you solder eutectic alloy In-Sn thin copper wire to measure current memory after turning off the lights at the temperature of liquid nitrogen. Measurements provide the current value memory ~4050% after turning off the light in the near IR region of the spectrum.

Literature

[1] A. C. Simashkevich. Physical properties of heterojunctions on the basis of compounds AIIBVI. Chisinau. Stoica, 1980, 162 C.

The optical memory element containing a hetero n-InSb--SiO2-P-Si, wherein the heterostructure obtained by deposition of polycrystalline films of n-InSb substrate, which is made of oxidized silicon at 300oWith subsequent thermal recrystallization.

 

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