A method and apparatus for growing crystals

 

(57) Abstract:

The invention relates to the cultivation of artificial crystals (ZnO, SiO2Caso3, Al2ABOUT3). The inventive discusses a method and apparatus for hydrothermal crystal growth in the pressure vessel containing the power of crystals immersed in the mineralizing solution. The device is placed in the pressure vessel above the mineralizing solution. The device includes a restrictive casing having opposite main wall from passing through these channels. Restrictive casing completely surrounds the seed plate having opposite major surfaces. The holding device holds the seed plate in a restrictive housing so that the main surface of the bare plate are separated with an interval inside from the main walls. The invention allows to obtain crystals having a size and shape, leading to efficient industrial use. 5 C. and 33 C.p. f-crystals, 8 ill.

The invention relates to the cultivation of artificial crystals and, more particularly, to a method and apparatus for controlled hydrothermal crystal growth with the generation of crystalloid solution at high temperature and high pressure. In a typical industrial way autoclave contains nutrient material immersed in an aqueous solution. The upper part of the autoclave has a number of suspended bare wafers. The autoclave is heated to raise the temperature and pressure sufficient to dissolve the nutrient material in aqueous solution with formation in the nutrient solution. Usually the temperature in the autoclave is raised to approximately 350oC and pressure up to 69000 kPa. The temperature gradient inside the autoclave creates convection currents that carry nutrient solution up. The nutrient solution is then cooled and deposited on the seed plates, causing the growth of crystals.

Hydrothermal crystal growth is used for growing crystals, consisting of nutrient materials having very low solubility in pure water. Some of these materials include quartz (SiO2), zinc oxide (ZnO), calcite (caso3) and aluminum oxide (Al2O3). Although these materials under hydrothermal conditions are more soluble in aqueous solution is usually introduced mineralizers to get a reasonable solubility. In industrial crystal growth to minkovtsy neutral or acidic materials. The choice of mineralizers depends on growing material and impurities that are valid.

Crystals having the most important commercial value, which are grown hydrothermally are quartz crystals. Quartz crystals are commonly used in the electronics industry to obtain a quartz oscillator plates. Quartz crystals are also used in optical spectrographs and other optical devices. After growing artificial quartz crystals are sawed and cut with obtaining quartz plates. Currently, most consumers quartz plates require a quartz plate having a circular shape with a partial slice with the formation of the reference plane. The length of the plates, running perpendicular to the reference plane to the outer edge of the plate, often referred to as the height of the segment plate. Consumers usually require that all the quartz plate had a diameter of either 76/2 mm (3 inches) or one hundred (100) mm

In the crystallographic axis of the crystal is usually denoted as axis x, y and z axes, and each axis is perpendicular to each of the other two axes. Natural quartz crystal is elongated and usually Karelova crystal is in its longitudinal direction, while there are 3 x and 3 y-axis, perpendicular to the z axis. The x-axis intersect the angles formed by the sides of the crystal, whereas the y-axis are perpendicular to such parties.

In the methods of industrial production growth of the crystal in the z axis direction takes precedence over growth in the direction of the y-axis or above the growth in the direction of the axis X. In the direction of the y-axis growth is almost impossible. In the direction of the axis x of the crystal quickly come out by the end. Growth in the z axis direction, however, is fast and slowly come out. In addition, the growth in the direction of the z-axis gives a much smaller capture impurities than in other directions. The seed crystals are designed to take advantage of the preferred growth direction of the z axis.

US patent expired 3291575, which is given here as a reference, shows the seed plate having its greatest dimension in the direction of the y-axis and its smallest size in the z axis direction. Thus, the seed plate has a length in the y axis direction, the width in the direction x and the thickness in the z axis direction. This seed plate is often referred to as having a z-slice. The seed plate is z-cut has globigerinae axes x and y. This main surface and a steam room main surface on the opposite side of the bare plate z-cut are the largest area on the seed plate z-slice. Thus, the seed plate z-slice contributes to the growth of the crystal in the preferred direction of the z axis.

In many existing industrial methods of growing crystals of the bare plate freely suspended in an autoclave. As a result, the crystal growth often occurs in unwanted directions, such as the direction of the axis X. the Growth of the crystal in such undesirable directions tends to be defective and gives crystals having a size and shape that will not lead to effective industrial use.

To prevent unwanted growth of a crystal, some known methods inhibit the growth of the crystal in the direction of the x axis using the bounding plates or screens. Examples of such existing methods include the methods shown in U.S. patents 5069744, 3607108, 3013867, 2674520 and 3291575, each of which is given here as a reference.

Even if the crystal growth in unwanted directions is suppressed in the way of restrictive screens, cristoloveanu. Restrictive screens give crystals with flat sides and sharp corners. These flat sides and sharp corners should be eliminated a significant number of treatments to achieve the desired circular plate.

The technical task of the present invention is a method and device for growing crystals having the form, leading to effective use.

This technical problem is solved by a device for the formation of crystal growth from the seed crystal, which according to the invention contains restrictive housing for placement around the seed crystal, with many pass-through channels, and a holding device for holding the seed crystal in a restrictive housing.

Preferably the channels are non-linear in a direction parallel to the cross section of the bounding enclosure.

In addition, preferably restrictive casing has opposite open ends or consists of the opposite main walls and opposite first and second side walls, and these main walls are formed in channels.

Pray flat.

Also preferably the main wall and the first and second side walls are formed as a single unit from sheet metal having opposite side.

Preferably the sides of the metal sheet are fastened together by the fastening parts so as to form a second side wall, in which fasteners can be released, allowing the side parts of the sheet metal to move apart, resulting in access to the inside of the bounding enclosure.

Preferably the channels in each of the main walls are composed of many upward channels and many downward facing channels.

In addition, preferably, each of the main walls of the molded many top tabs and many of the lower flange, the upper protrusions define channels, upward, and the lower protrusions define channels directed downward.

Thus preferably the upper and lower projections are mainly semiconical.

Preferably restrictive casing has a generally elliptical cross-section or is rectangular.

The technical problem is also solved due to the fact that usterzai basket filled with a nutrient material and the mineralizing solution, and this basket is immersed in the mineralizing solution, suspension, having a carrier frame, and the specified suspension is located in the pressure vessel above the mineralizing solution, the seed plate having opposite major surfaces, and the device is suspended on a frame, and said device includes a restrictive casing surrounding the seed plate, and a holding device that holds the seed plate in a restrictive housing so that the seed plate is fully seated in restrictive housing.

Preferably the nutrient material and the seed plate are composed of quartz.

Preferably restrictive casing comprises opposite main walls and opposite first and second side walls, each of the main walls has many educated in the it channel.

Preferably restrictive casing includes opposite open ends.

Preferably the holding device holds the seed plate in a restrictive housing so that the main surface is directed to glares, while the retaining device holds the seed plate so that the axis z of the bare plate is parallel to the cross-sectional restrictive casing.

Preferably the channels are non-linear in the z axis direction of the bare plate.

In addition, preferably, the holding device holds the seed plate in a restrictive housing so that the main surface directed toward the open ends and offset from the inside of them.

Preferably the seed plate is substantially round and has a rhombohedral slice.

The technical problem is solved due to the fact that according to the invention in a method of obtaining a crystal, in which the use of the pressure vessel, the mineralizing solution, nutrient material, trash, food, seed plate having a main surface, the device having a restrictive casing to surround the bare plate, partially fill the pressure vessel of the mineralizing solution, place a basket of food in the pressure vessel so that the food basket is immersed in the mineralizing solution, set the seed plate in restrictive housing so that said pressure above the mineralizing solution, seal the pressure vessel, and heated pressure vessel to a temperature at which the seed plate is hydrothermal crystal growth.

Preferably the nutrient material and the seed plate are composed of quartz.

Preferably use restrictive casing, with many going through channels, and the channels are non-linear in the z axis direction of the bare plate.

Preferably use restrictive casing, which is formed of sheet metal having opposite lateral part, and the specified sheet metal give such a configuration that the side pieces overlap.

Preferably the cross-section of the bounding casing is mostly elliptical.

Preferably the sides of the sheet metal fasten together fasteners; and a fastener can be released, allowing the side parts of the sheet metal to move apart, resulting in access to the inside of the bounding enclosure.

Preferably the method further ensure the growth of the crystal continuously n the casing, cool the pressure vessel, open the pressure vessel, remove the device from the pressure vessel, release fasteners restrictive casing, divide the side of the metal sheet and remove the crystal from the restrictive shell.

The technical problem is also solved due to the fact that according to the invention in a method of producing mainly round crystal plates, which use a pressure vessel containing a basket filled with nutritive material and the mineralizing solution, and this basket is immersed in the mineralizing solution, the seed plate having a main surface, the device having a restrictive casing to surround the bare plate, and restrictive housing has a generally elliptical cross section with major and minor axes, set the seed plate in restrictive housing so that the main surface of the bare plate are arranged along the major axis of the cross-section, suspend the device within the pressure vessel above the mineralizing solution, seal the pressure vessel, heat the pressure vessel to a temperature at which the bare square is the Department until while the growth of the crystal on the main surface reaches the bounding casing, resulting in a mainly cylindrical crystal, remove the device from the pressure vessel, remove the crystal from the device and perform the parallel sections of the crystal across the longitudinal axis of the crystal and at an acute angle thereto.

Preferably the nutrient material and the seed plate are composed of quartz.

Preferably restrictive casing has a lot going through channels that are nonlinear in the z axis direction of the bare plate.

The technical problem is also solved due to the fact that according to the invention in a method of obtaining a crystal, in which the use of the vessel, nutrient material, the seed crystal, the device having a restrictive casing to surround the seed crystal, and restrictive housing has a lot going through channels, partially fill the vessel with nutritive material, set the seed crystal in restrictive housing so that the seed crystal is located in a fully restrictive casing, place the device inside the vessel and heat the vessel to a temperature, preal and the seed crystal are composed of quartz.

Preferably the channels are non-linear in the z axis direction of the seed crystal.

Preferably restrictive casing consists of opposite open ends, opposite main walls, opposite first and second side walls, and these main walls are arcuate and have educated them in the channels.

Preferably, the seed crystal is a plate having opposite major surfaces; and at the same time the seed crystal is set in a restrictive housing so that the main surface is directed to the main walls.

Hereinafter the invention will be explained in more detail with reference to the accompanying drawings, on which:

in Fig.1 shows a diagram of the autoclave;

in Fig. 2 shows in perspective front view of the first strucutural site;

in Fig.3 is a bottom view of the first strucutural site;

in Fig.4 is a cross section of the upper ledge;

in Fig.5 is a cross section of the lower ledge;

in Fig.6 shows in a perspective rear view of the second strucutural site;

in Fig. 7 shows in perspective front view of the third strucutural site;

in Fig.8 is a top view of the third seventy have the same numerals denote despite they are shown in different embodiments of the present invention. It should also be noted that in order to clearly and briefly review the present invention, it is not necessary that the drawings were made in the scale, and certain features of the invention can be shown somewhat in schematic form.

In Fig. 1 shows a diagram of the autoclave 10, which can be used in the method and apparatus of the present invention. The autoclave 10 is generally cylindrical and has an internal diameter of approximately 33 cm (13 inches) and an internal volume of about 296 l (78,2 gallon). The autoclave 10 has an upper opening that is sealed by the stopper 12. The tube 12 may be a Bridgman-type or Greylock-type.

The autoclave 10 has an area of dissolution of the mineral, or the camera power supply 14, and strawcovered chamber 16. Camera power supply 14 and strawcovered camera 16 are separated by a perforated partition wall 18. Heaters with electric resistance 20 is installed around the outer surface of the autoclave 10. Control system (not shown) is connected to the heaters 20 and provides independent control of the temperatures in the feed chamber 14 and strawcovered chamber 16. The system is 10, such as temperature and pressure.

It is obvious that the present invention is not limited to the above autoclave. Preferably other autoclaves can be used with equal functionality and without deviation from the scope and idea of the present invention, as set forth in the attached claims.

Basket supply 22 is filled with raw crystal power supply 24. Preferably raw crystal power supply 24 is composed of quartz. However, there may be used other types of raw crystal power, such as zinc oxide (ZnO), calcite (caso3) and aluminum oxide (Al2O3). Basket supply 22 with raw crystal power or "lascas" 24 is located in the feed chamber 14. In strawcovered chamber 16 is a container 26 having multiple vertically remote from each other of supporting frames 28, defining many vertical strawcovered tiers 30. Many staracademy nodes 32 attached to the support frame 28. Each staracademy node 32 holds the seed crystal or the seed plate 33 (shown in Fig.2).

The mother liquor or the mineralizing solution, preferably consisting of sodium carbonate sludge is predpochtitelno mineralizing solution is filled in about 78% of the free volume of the autoclave 10. Preferably used in approximately 7% solution of sodium carbonate or approximately 5% solution of sodium hydroxide.

In Fig. 2 shows in perspective front view of one of staracademy nodes 32 to partially cut to best show its interior. Staracademy node 32 constructed in accordance with the first variant of the present invention and generally includes a restrictive cover or stopper 34, the upper support 36 and the bottom support 38. Staracademy node 32 is used for growth of single quartz crystal, which can be obtained many round quartz plates.

The stopper 34 has a hollow inner portion and an open opposite ends 40, 42 at the top and bottom of the stopper 34. The limiter is preferably performed as a single unit from sheet metal of, for example, low carbon steel, having first and second side parts 44, 46 (best shown in Fig.3). However, it should be understood that the stopper 34 can be made as a single unit from a sheet made of a material other than metal. Sheet is given such a configuration that after formation to receive the stopper 34 has a cylindrical shape. Radical axis limiter 34), which has ellipsometry form with partial cutout for education direct end. Thus, the stopper 34 has an arcuate first side 52 and opposite first and second major surfaces 48, 50, which are also arcuate. The metal sheet is configured such that the first and second side parts 44, 46 are overlapped and bonded to each other with the possibility of breaking through the upper and lower fasteners 54, 55 so as to form a second flat side 53 opposite the first side wall 52. The upper and lower fasteners may be essentially U-shaped clips having a pair of legs extending from the bend.

Since the cross-section (at right angles to the longitudinal axis of the restrictor 34 is substantially elliptical, the stopper 34 has a width along the main axis of the cross section and the depth of the minor axis of the cross section. As will be shown later in more detail, the width and the depth limiter 34 depend on the size of the quartz plates that need to be obtained. If desired the plate 76.2 mm, the width of the stopper is preferably in the range from approximately 76.2 mm to 95,25 mm, more predpochtite preferably approximately 71,1 mm If desired the plate is 100 mm, the width of the stopper is preferably in the range from approximately 101,6 mm to 120,65 mm, more preferably is 108, and the depth is preferably in the range from approximately 83,8 mm to 109,2 mm, more preferably approximately 96,5 mm Stopper 34 has a length preferably in the range from about 304.8 mm to 457,2 mm, more preferably approximately 317,5 mm

Be aware that the stopper 34 can have dimensions for other plates than 76.2 mm and 100 mm plate. For example, the stopper 34 may be of a size to receive 152,4 mm plates.

In Fig.3, each of the first and second side portions 44, 46 of the stopper 34 has a pair of upper holes (not shown) and a pair of lower holes (not shown). The upper and lower openings in the first side portion 44 are respectively in line with the upper and lower holes in the second side 46. The jaws of the upper bracket 54 pass through the upper hole, while the lower legs of the bracket 55 pass through the lower holes. With respect to each of the upper and lower fasteners 54, 55 tabs bent inward towards each other to secure the first and second base decompressed, the first and second side parts 44, 46 can be moved apart with opening limiter 34 and providing a result of access to the interior of the restrictor 34. In Fig.3 the upper and lower mounting parts 54, 55 are shown open, and the second side portion 46 is shown reaching outward from the first side 44.

Many top tabs 56 and many of the lower protrusions 58 formed in the first and second major walls 48, 50 of the stopper 34. The upper protrusions 56 are located on the template, with the upper limit, spaced down from the upper end 40 of the stopper 34, and the lower boundary, located approximately halfway along the length of the restrictor 34. Lower projections 58 are located on the template, with a lower bound of spaced upward from the lower end 42 of the stopper 34, and the upper boundary located approximately halfway along the length of the restrictor 34, adjacent to the lower boundary of the upper ledges 56.

Each of the upper and lower projections 56, 58 is generally semiconical shape. The upper and lower projections 56, 58, however, are oppositely directed. Each of the upper protrusions 56 extends outward and upward from the closed bottom end to top end, defining upward opening 60, while each of the lower C hole 62 (shown in Fig.3).

In Fig. 4 and Fig.5 shows respectively the cross-section of one of the upper ledges 56 and one of the bottom tabs 58. The upper ledge 56 defines an upper channel 57, which is curved upwards through the restrictor 34 from the inside out. The lower ledge 58 defines a bottom channel 59, which is curved down through the stopper 34 from the inside out. The upper and lower channels 57, 59 are not linearly through the restrictor 34 in a direction parallel to the cross section of the restrictor 34. In contrast, growth of a crystal on the main surface 94 of the bare plate 33 is linearly in a direction parallel to the cross section of the stopper, as will be discussed in more detail later. Thus, the crystal, which grows inside the limiter 34, cannot grow through the upper and lower channels 57, 59.

Despite the fact that the crystal cannot grow through the upper and lower channels 57, 59, growing solution can flow through the upper and lower channels 57, 59. Thus, the upper and lower channels 57, 59 allow growing solution transported, or transferred through the first and second major walls 48, 50 so as to contact with the main surfaces 94 of the bare plate 33. This transfer you is radicicola 34 approaches the first and second major walls 48, 50. If growing solution is not transferred through the first and second major walls 48, 50, at this point the main surface 94 this points to the presence growing solution, and the crystal growth abruptly ends of the first and second major walls 48, 50. Thus, the upper and lower channels 57, 59 allow the crystal to grow up to, but not through the first and second major walls 48, 50.

As can be seen in Fig.2, the upper support 36 includes an elongated top beam 64 that is attached to the stop plate 34 to the upper end 40. The upper end of the beam passes through a hole provided in the first side wall 52 of the stopper 34, while the opposite end (not shown) of the upper beam passes through aligned holes in the first and second side portions 44, 46 of the stopper 34. The upper beam 64 is placed along the major axis of the cross section of the restrictor 34 and slides through the holes in the restrictor 34.

The upper bearing 36 also includes a support plate 66 and the upper clamp 68. Support plate 66 is fastened to the upper beam 64 and connects with the upper end of the spring 70. The upper clamp 68 has an elongated body with opposite end portions. The pair separated by an interval of branches 72 moves downward from each of the end plate 66. Branch 72 is clamped to the upper part of the bare plate 33.

The lower bearing 38 includes an elongated lower beam 80 that is attached to the stop plate 34 to the lower end 42. The lower end of the beam 80 passes through a hole provided in the first side wall 52 of the stopper 34, while the opposite end (not shown) lower beam 80 passes through aligned holes in the first and second side portions 44, 46 of the stopper 34. The lower beam 80 is centered with the upper beam 64 of the upper support 36 and, thus, is located along the major axis of the cross section of the restrictor 34. The lower beam 80 slides through the holes in the restrictor 34.

The lower bearing 38 includes a lower clamp 82. The lower clamp 82 has an elongated body with opposite end portions. The pair separated by spacing the lower branches 84 moves downward from each of opposite end parts. Two pairs are separated by the interval of the upper branches 86 depart upward from the body between the lower branches 84. The lower branches of the clamp 84 of the lower beam 80, while the upper branch 86 to hold the lower part of the bare plate 33.

The seed plate 33 is composed of the same material as the specified material trimmed Loadee the invention can also be used for growing crystals other than quartz crystals such as zinc oxide (ZnO), calcite (caso3) and aluminum oxide (Al2O3). Thus, the present invention involves the use of bare wafers made from these materials.

The seed plate 33 is generally rectangular and has a z-slice. As such, the seed plate has a length in the direction of its crystallographic y-axis, the width in the direction of its crystallographic x-axis, and the thickness in the direction of its crystallographic z-axis. Thus, the seed plate 33 has upper and lower faces 88, 90, perpendicular to the y-axis, the side faces 92 perpendicular to the axis x, and the opposite major surface 94 which is perpendicular to the z axis.

With the upper part of the bare plate 33 sandwiched between the branches 72 of the upper clamp 68, and the lower part of the bare plate 33 is sandwiched between the upper branches 86 of the lower clamp 82, the seed plate 33 is securely mounted inside the limiter 34. The upper face 88 of the bare plate 33 adjacent to the upper clamp body 68, while the lower edge 90 of the bare plate 33 adjacent to the body of the lower clamp 82. The width of the bare plate 33 along the main axis of Poperechnaya wall 52 in the bracket 34 and the first side 44 of the stopper 34. The main surface 94 of the bare plate 33 are perpendicular to the cross section of the restrictor 34 and are inward from the first and second major walls 48, 50 of the stopper 34. Thus, the main surface 94 of the bare plate 33 toward the upper and lower channels 57, 59 in the limiter 34 and the z-axis of the seed plate 33 is parallel to the cross section of the restrictor 34. Accordingly, the upper and lower channels 57, 59 are nonlinear in the direction of the z-axis of the seed plate 33.

As soon as the seed plate 33 are installed inside staracademy node 32 as described above, sutrakrtanga nodes 32 suspended from the supporting frames of the container 26. Sutrakrtanga nodes 32 are separated with an interval from each tier 30 and between the tiers 30 to allow fluid to flow around each strucutural node 32. If the stops 34 are sized to receive 76.2 mm plates, are preferably used five (5) strawcovered tiers 30, preferably eight (8) strawcovered node 32 is located in each layer 30 with a total number of forty (40) strawcovered nodes 32. If the stops 34 are sized to receive a 100 mm plates, prrevious node 32 is located in each layer 30 with a total number of thirty (30) strawcovered nodes 32. After all sutrakrtanga nodes 32 are on Nessim frames 28, the container 26 is introduced into the autoclave 10 through the top opening. Inside of the autoclave 10 stops 34 are its going vertically lengths.

As soon as sutrakrtanga nodes 32 are installed in the autoclave 10, he is sealed by the stopper 12, and the control system includes a heater 20. The heaters 20 to increase the temperature strawcovered camera 16 and camera power supply 14 to achieve specified temperatures. The control system then controls the heaters 20 to maintain strawcovered chamber 16 and chamber 14 power at given temperatures. Preferably, the preset temperature for camera power supply 14 is programmed at a temperature in the range of approximately 345-360oC. the desired temperature for strawcovered chamber 16 preferably is programmed to be 5 to 10oWith colder than a preset for the camera power supply 14, in order to create a temperature gradient across the wall 18. The pressure in autoclave 10 is supported in the interval from approximately 75840 to 89630 kPa, more preferably 82740 kPa.

High temperature and pressure autoclave 10 make raw Krista is Due to the temperature differential between the camera power supply 14 and strawcovered camera 16 heat flow growing solution flowing upward from the camera power supply 14 and arrive in strawcovered chamber 16. Heat flow upwards along the rising part strawcovered chamber 16 and then to the upper hole, change the direction and flow down along the descending part of strawcovered camera 16. Thus, the circular flow growing solution is continuously moving between the camera power supply 14 and strawcovered camera 16.

In relation to each of staracademy nodes 32 circular flow growing solution enters the limiter 34, in contact with the seed plate 33 and then out of the limiter 34. If staracademy node 32 is placed in the ascending part strawcovered camera 16 growing solution enters the limiter 34 through the bottom end 42 and lower channels 59 in the bracket 34, and exits the restrictor 34 through the upper end 40 and the upper channels 57 in the restrictor 34. On the contrary, if staracademy node 32 is placed in the descending part strawcovered camera 16 growing solution enters the limiter 34 through the upper end 40 and the upper channels 57 in the restrictor 34 and exits limiter 34 through the bottom end 42 and lower channels 59 in the restrictor 34. Thus, the limiter 34 provides a circular flow-growing solution Naivasha chamber 16 growing solution is cooled and becomes supersaturated with respect to dissolved silica. The result of the growing solution visadelta quartz seed plates 33, when growing solution flows over bare wafers 33, causing therefore the growth of the crystal.

In relation to each seed plate 33 crystal growth on the sidewalls 92 in the direction of the x axis is suppressed effectively the first side wall 52 of the stopper 34 and the first side 44 of the stopper 34. Growth on the upper and lower ends 88, 90 in the direction of the y-axis is negligible. Growth in the z axis direction, however, is fast. Therefore, the crystal growth takes place almost entirely on the main surface 94 in the direction of the z axis, which is perpendicular to the main surfaces 94 of the bare plate 33 and parallel to the cross section of the restrictor 34.

When a crystal grows in a negative direction, i.e., in directions other than the z axis, are formed rhombohedral surface. The crystal growth on these rhombohedral surfaces in unfavorable directions, however, is slower crystal growth on the main surface 94 in the direction of the z axis.

The growth of the crystal in the z axis direction continues until, until it reaches the limiter 34 at the point in to the emergency in the z axis direction, and the upper and lower channels 57, 59 are non-linear in the z axis direction, the crystal growth can not occur through the upper and lower channels 57, 59. Thus, the crystal growth in the direction of the z axis stops.

From the above it should be clear that the determining factor is that the upper and lower channels 57, 59 are not linearly through the restrictor 34 in the direction of the z-axis of the seed plate 33. The upper and lower channels 57, 59, however, may have a configuration different from the configurations described here. For example, the upper and lower channels 57, 59 can be serpentinejarrahdale.

Even though the growth of the crystal in the z axis direction is suppressed, the growth of rhombohedral crystal on the surfaces in an unfavorable direction continues and in fact accelerated. This growth of a crystal in an unfavorable direction continues until, until it reaches the limiter, where he also physically suppressed. Thus, the crystal fills the interior dimensions of the restrictor 34 and therefore takes cylindrically shape, having a cross section such as an ellipse with partial slice with the formation of the reference plane.

On the basis of the extensive cultivation of KRI is singing accuracy. Therefore, the time required to fill the crystal stopper 34 can be determined with a high degree of accuracy without using summagraphics dimensions of the crystal. Since the limiter 34 is completely suppresses the growth of crystal after filling the crystal stopper 34, the transformation of the crystal is not taken into account. Therefore, additional time may be added to the estimated time of growth to ensure full growth of the crystal. The growth time is approximately 4 months for crystal, which gives 76.2 mm plates, and 6 months for crystal, which gives a 100 mm plate.

As soon as the cycle of the autoclave 10 is completed, the control system turns off the heaters 20 and the autoclave 10 is allowed to cool. Then open the tube 12 and is removed from the autoclave 10 container 26. Then, the container 26 is removed sutrakrtanga nodes 32 and from them derive the crystals. In relation to each of staracademy nodes 32 crystal extracted from strucutural node 32 by separation of the upper and lower mounting parts 54, 55 and separation of the first and second side portions 44, 46 in order to reveal the limiter. Then grab the crystal from strucutural node 32 through will limit the steel can be cut into many plates. In particular, the crystal can be made of many parallel cuts across the longitudinal axis of the crystal (the crystallographic y-axis). Each of the sections is at an acute angle to the z axis. This angle is determined by the customer's specifications and usually is in the range of approximately 31-43o. Of course you can also perform cuts at angles outside this interval. Cutting the crystal at an acute angle gives mostly circular plate. More precisely, the plates are round with partial slice with the formation of the reference plane.

As you can see from the above, the depth of each of the limiter 34 is determined by the angle at which to cut the crystal, and the required diameter of the obtained plates. In particular, the depth is equal to the desired diameter (plus tolerance machining), multiplied by the cosine of the angle at which to cut crystal. In order to avoid having multiple limiters 34 of different sizes, the depth of each of the stopper 34 can be calculated using the angle of the 31obecause a large part of the crystal is cut at an angle of at least 31o. If the angle for a particular crystal exceeds the 31o, krisnan to get 76.2 mm plates, the depth is preferably approximately 71,1 mm, and if the limiter 34 is designed to receive a 100 mm wafer, the depth is preferably approximately 96,5 mm

The width of each limiter 34 is determined by the height of the segment plates. More precisely width equal to the height of the segment plus the tolerance machining. As established earlier, if the limiter 34 is designed to receive 76.2 mm plates, the width is preferably approximately 82,55 mm, and if the limiter is designed to produce 100 mm plates, the width is preferably approximately 108 mm

Once the crystal is cut, the plate temporarily glued together with re-education of the crystal. Crystal then krupitza on a lathe to remove any surface irregularities that may be present. After krupenia glue dissolves with re-obtaining the plates.

It should be clear that the present invention is not limited by the limiter with cylindrical form with mostly elliptical cross-section. Can be provided by the limiters having a different form. The desired shape of the obtained crystal ODA is about invention. In particular, in Fig.6 shows in a perspective rear view of the second strucutural node 100, which has essentially the same design as staracademy node 32 of the first version, except for the following differences. The limiter 34 is replaced by the second limiter 102. The second limiter 102 preferably consists of a sheet of low carbon steel, which is attached to a rectangular shape. The second limiter 102 includes first and second side parts 44, 46 and flat main walls 104, 106 and first and second side walls 108, 109. The upper and lower projections 56, 58 are formed on the main walls 104, 106 according to the same patterns as in the restrictor 34. The first and second side parts 44, 46 loosely fastened together in the same way as in the restrictor 34, so as to form a second side wall 109.

The seed plate 33 is securely placed inside a second limiter 102. Side faces 92 of the bare plate 33 respectively adjacent to the first side wall 108 and the first side 44 of the second limiter 102, and the main surface 94 of the bare plate 33 toward the upper and lower channels 57, 59 in the second limiter 102. The second limiter 102 is installed in the autoclave 10 its clonogenic conditions, described above for the first variant. The second crystal, however, is essentially rectangular, instead of the commonly existing cylindroiulus. The second crystal can be cut with many of rectangular plates with y-cut or multiple rectangular bare wafers. In order to get a rectangular plate with a y-cut crystal is a multitude of parallel incisions essentially perpendicular to the longitudinal axis of the crystal (the crystallographic y-axis). In order to get a rectangular bare plate, crystal runs many parallel sections parallel to the crystallographic y-axis.

It should also be noted that the present invention is not limited to the use of the bare plate with z-slice. Can be used other bare plate having different sections.

In Fig.7 and Fig 8 shows a third variant of the present invention. More specifically, in Fig. 7 and Fig.8 shows schematically the front view and top view with cut third strucutural node 110, having essentially the same design as staracademy node 32 of the first variant, with the exception of the described Dalem side clamps 114. The third limiter 112 is essentially the same design as the limiter 34, except that the upper and lower end part of the stopper 34 are cut at an angle with the receipt of the third limiter 112 with angular faces 116, which are parallel to each other. Thus, the third limiter 112 has a profile that is similar to a parallelogram.

The second seed plate 118 is installed inside the third limiter 112 with the side clamps 114. The second seed plate 118 is essentially round and cut parallel to the rhombohedral surface of the original crystal, for this reason the seed plate, such as the second seed plate 118, is called having a rhombohedral slice. The second seed plate 118 has the opposite major surface 120 and the annular edge 122. The main surface 120 cross the crystallographic z-axis of the second bare plate 118 at an angle of approximately 38,25o.

The second seed plate 118 is installed in the third limiter 112 to have a main surface 120 are parallel to the angular faces 116. The annular edge 122 is adjacent to the first and second major walls 48, 50, as well as ivaldi node 110 is suspended to one of the supporting frames 28 of the container 26 by a wire (not shown), connected with the third limiter 112 so that the width of the third limiter 112 is directed vertically. Thus, the second seed plate 118 is installed in the autoclave 10 with the major surfaces 120, directed vertically, as shown in Fig.7.

The third crystal is grown in the third limiter 112 in conditions similar to the conditions described above for the first variant. The third crystal is basically cylindrical with a reference plane and has the opposite angular faces that are parallel to each other. The third crystal is ideally suitable for receiving bezzatratnyh round plates. In order to get bezzatratnye round plate on the third crystal is many parallel sections parallel to the second seed plate 118.

Although the preferred variants of the present invention is shown and described, it should be clear that they can be made of various modifications and rearrangement of parts without departure from the scope of the invention as described and claimed here. For example, the limiter 34, the second limiter 102 and the third limiter 112 can be composed of materials other than mild steel. In addition, across which urali, different from the upper and lower channels 57, 59. In addition, the upper and lower channels 57, 59 can be located throughout the limiter 34, the second limiter 102 and the third limiter 112 instead of the location only on the front wall 48, 104 and rear walls 50, 106.

It should be clear that the present invention can be used for growing crystals other than quartz crystals such as zinc oxide (ZnO), calcite (caso3) and aluminum oxide (Al2O3).

1. Device for growing crystals from a seed crystal containing restrictive housing for placement around the seed crystal, with many passing through it channels; a holding device for holding the seed crystal in a restrictive housing.

2. The device under item 1, in which the channels are non-linear in a direction parallel to the cross section of the bounding enclosure.

3. The device under item 1, in which the restrictive casing has opposite open ends.

4. The device according to p. 3, in which the restrictive casing comprises opposite main walls and opposite first and second side walls, p. the main wall and the first side wall are curved, and the second side wall is flat.

6. The device according to p. 4, in which the main wall and the first and second side walls are formed as a single unit from sheet metal having opposite side.

7. The device according to p. 6, in which the side of the sheet metal parts are fastened together by the fastening parts so as to form a second side wall; and in which fasteners can be released, allowing the side parts of the sheet metal to move apart, resulting in access to the inside of the bounding enclosure.

8. The device according to p. 4, in which the channels in each of the main walls are composed of many upward channels and many downward facing channels.

9. The device under item 8 in which each of the main walls of the molded many top tabs and many of the lower projections; and in which the upper ledges define channels, upward, and the lower protrusions define channels directed downward.

10. The device under item 9, in which the upper and lower projections are mainly semiconical.

11. The device under item 1, in which the restrictive housing has a generally elliptical

13. Device for hydrothermal crystal growth, containing a pressure vessel containing a basket filled with nutritive material and the mineralizing solution, and this basket is immersed in the mineralizing solution; suspension having a load-carrying frame and the specified suspension is located in the pressure vessel above the mineralizing solution, the seed plate having opposite major surfaces; and a device suspended on a frame, and said device includes a restrictive casing surrounding the seed plate; and a holding device that holds the seed plate in a restrictive housing so that the seed plate is fully seated in restrictive housing.

14. The device according to p. 13, in which nutrient material and the seed plate are composed of quartz.

15. The device according to p. 13, in which the restrictive casing comprises opposite main walls and opposite first and second side walls, each of the main walls has many educated in the it channel.

16. The device according to p. 15, in which the restrictive housing includes opposite open ends.

18. The device according to p. 17, in which the seed plate is essentially rectangular and has a z-cut; and in which the retaining device holds the seed plate so that the axis z of the bare plate is parallel to the cross-sectional restrictive casing.

19. The device according to p. 18, in which the channels are non-linear in the z axis direction of the bare plate.

20. The device according to p. 16, in which the retaining device holds the seed plate in a restrictive housing so that the main surface directed toward the open ends and offset from the inside of them.

21. The device according to p. 20, in which the seed plate is substantially round and has a rhombohedral slice.

22. A method of obtaining a crystal, in which the use of the pressure vessel, the mineralizing solution, nutrient material, trash, food, seed plate having a main surface, the device having a restrictive casing to surround the bare plate, partially fill the pressure vessel of the mineralizing solution, place a basket of food in the pressure vessel so that korzenny casing so that the seed plate is located in a fully restrictive casing, suspend the device within the pressure vessel above the mineralizing solution, seal the pressure vessel, and heated pressure vessel to a temperature at which the seed plate is hydrothermal crystal growth.

23. The method according to p. 22, in which the nutrient material and the seed plate are composed of quartz.

24. The method according to p. 23, in which the restrictive casing has a lot going through his channels.

25. The method according to p. 24, in which the channels are non-linear in the z axis direction of the bare plate.

26. The method according to p. 24, in which the restrictive casing is formed of sheet metal having opposite lateral part, and the specified sheet metal give such a configuration that the side pieces overlap.

27. The method according to p. 26, in which the cross-section of the bounding casing is mostly elliptical.

28. The method according to p. 26, in which the side of the sheet metal parts are fastened together by the fastening parts; and in which fasteners can be released, allowing the side

29. The method according to p. 26, which additionally provide increased crystal continuously on the seed plate up until the growth of a crystal on the main surface reaches the bounding enclosure, cooling the pressure vessel, open the pressure vessel, remove the device from the pressure vessel, release fasteners restrictive casing, divide the side of the metal sheet, and remove the crystal from the restrictive shell.

30. A method of obtaining a mostly round crystal plates, which use a pressure vessel containing a basket filled with nutritive material and the mineralizing solution, and this basket is immersed in the mineralizing solution, the seed plate having a main surface, the device having a restrictive casing to surround the bare plate, and restrictive housing has a generally elliptical cross section with major and minor axes, set the seed plate in restrictive housing so that the main surface of the bare plate are arranged along the major axis of the cross-section, suspend the device within the pressure vessel above Mineralogy on the seed plate is hydrothermal crystal growth, provide a continuous crystal growth on the seed plate up until the growth of a crystal on the main surface reaches the bounding casing, resulting in a mainly cylindrical crystal, remove the device from the pressure vessel, remove the crystal from the device, and perform a parallel cut crystal across the longitudinal axis of the crystal and at an acute angle thereto.

31. The method according to p. 30, in which nutrient material and the seed plate are composed of quartz.

32. The method according to p. 31 in which restrictive casing has a lot going through his channels.

33. The method according to p. 32, in which the channels are non-linear in the z axis direction of the bare plate.

34. A method of obtaining a crystal, in which the use of the vessel, nutrient material, the seed crystal, the device having a restrictive casing to surround the seed crystal, and restrictive housing has the possibility of going through channels, partially fill the vessel with nutritive material, set the seed crystal in restrictive housing so that the seed crystal is located in a fully restrictive casing, placed at the East of the crystal.

35. The method according to p. 34, in which nutrient material and the seed crystal are composed of quartz.

36. The method according to p. 34, in which the channels are non-linear in the z axis direction of the seed crystal.

37. The method according to p. 36, in which the restrictive casing consists of opposite open ends, opposite main walls, opposite first and second side walls, and these main walls are arcuate and have educated them in the channels.

38. The method according to p. 37, in which the seed crystal is a plate having opposite major surfaces; and in which the seed crystal is set in a restrictive housing so that the main surface is directed to the main walls.

 

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