The seed for growing a single crystal of quartz (options)

 

(57) Abstract:

The invention relates to a means of growing single crystals from solutions by applying pressure, for example, hydrothermal method and can be used in the manufacture of bare wafers for growing crystals with a small number of dislocations. The seed for growing a single crystal of quartz contains all versions of the basic seed and additional elements that are mechanically United with her under the angle =90o90o<=180o(Option III). Basic seed may have or XY ZY slice, and additional elements ZY slice or ZX or YX for option I run YX or YZ or ZX cut for option II, or XY ZY slice for III case or to have the effect of area for all alternatives. Additional elements can be mechanically connected with the base priming butt or overlap or attached to two lateral sides at the edges. Performing the priming compound in the form of basic seed or XY ZY slice and additional elements to the above sections for the three options and angles of the mount allows regardless of the size of the base of the seed to grow the crystal along the X-axis without size limitations (OGRANICHENNOY dislocation zone in the seed. 3 C. and 35 C.p. f-crystals, 3 ill.

The invention relates to a means of growing single crystals from solutions by applying pressure, for example, hydrothermal method, and can be used in the manufacture of bare wafers for growing crystals with a small number of dislocations.

Known seed for growing a single crystal of quartz, described in the article authors Yutaka Mikawa and other "New technque to decrease dislocations in synthetic quartz crystal" Proceed of the 1999 IEEE International Fr. Contr. Sump. 1999, Micropolis Besanson, France, p. 773-776, Fig.1.

Known seed cut from the +X the field of synthetic quartz and has a ZY slice.

A disadvantage of the known seed is the shortening of the Y-dimension due to the presence of oblique m-surfaces for the sector +X quartz crystal. Because in the direction of the Y-axis of the crystal is practically not growing, and formed during the growth of the sector +X face of the hexagonal prism m inclined at an angle of 30oto the Y-axis, it is necessary to preserve the rectangular shape of shortening the seed on the y axis.

Closest to the technical nature of the claimed is the seed for growing a single crystal of quartz, described in the aforementioned article, the authors Yutaka Mikawa and others (Fig.2) and is selected as a prototype.

Using this seed sector growth +X crystal fills the cutout made in the seed, sliding on "guides to the planes of the hexagonal prism m, which allows to avoid large losses of the length of the seed on the y axis.

However, the area along the edges of the seed length from 20 to 30 mm, is used to create the "guides" planes are not cleared from the dislocations that reduces useful dislocation zone of quartz crystal.

The aim of the invention is the increase of the effective dislocation zone of the crystal.

This goal is achieved by the fact that:

in the first embodiment, the seed for growing a single crystal of quartz, made in the form of the triangular open in the direction of +X scope the scope of crystalline quartz, the base of which has a ZY slice, according to the invention the frame is made of composite of basic seed-base and additional elements - sides, mechanically attached to the edges of the base of the seed, and the directions of axes Y and Z basic seed and additional elements are the same;

in the second embodiment, vypravleni +X scope the scope of crystalline quartz, the basis of which has a longitudinal axis parallel to the Y-axis, according to the invention the frame is made of composite of basic seed-base with XY slice, and additional elements - sides, mechanically attached to the edges of the base of the seed, and the directions of axes Y and Z basic seed and additional elements are the same.

In both versions of the seed for growing a single crystal of quartz, additional elements - lateral side of the frame can be attached to the edges of the base of the seed-base angle =90oor the 90o<=90o(see Fig.2A) or the 90o<=180o(Fig.2B).

Additional elements 2' and 2" can be mechanically connected with the base 1 seed tube (Fig.1, 2) or overlap or attached to two lateral sides at the edges (Fig.3).

Basic seed 1 and additional elements 2 seed is made of crystalline quartz, additional fastening elements 2 to the base 1 seed is produced, for example, using wire, clamp or other means (not shown).

Seed basic seed 1 and additional elements 2' and 2", mechanically fastened together probolem hydrothermal method at elevated temperature and pressure to grow the single crystal of quartz. during one or more cycles depending on the required size of the crystal. Such growth conditions can be, in particular, pressure 400-1200 ATM and the temperature difference between the area of growth and dissolution from 5 to 30oWhen crystallisation temperature of 300-360oWith alkali or soda solution.

In the process of crystal growth zone +X grows without significant reduction on the Y-axis, which allows changing the slice method of rotation, to obtain multilocation seed grown to declare a seed single crystal of quartz, as well as to increase the size of the seed on the x-axis.

In comparison with the prototype of the proposed seed in all its variants allows you to get the most useful area of the crystal without dislocations.

1. The seed for growing a single crystal of quartz, made in the form of triangular, open in the direction of +X scope the scope of crystalline quartz, the base of which has a ZY slice, wherein the frame is made of composite of basic seed-base and additional elements - sides, mechanically attached to the edges of the base of the seed, and the directions of axes Y and Z basic seed and additional elements are the same.

3. The seed for growing a single crystal of quartz under item 1, characterized in that additional elements - lateral side of the frame is mechanically attached to the edges of the base of the seed-base at an angle of 90o<= 90o.

16. The seed for growing a single crystal of quartz under item 14, characterized in that additional elements - lateral side of the frame is mechanically attached to the edges of the base of the seed-base at an angle of 90o<<180 o.

17. The seed for growing a single crystal of quartz under item 14, characterized in that additional elements have YX cut.

18. The seed for growing a single crystal of quartz under item 14, wherein the additional elements are Z slice.

19. The seed for growing a single crystal of quartz under item 14, characterized in that additional elements have YZ slice.

20. The seed for growing a single crystal of quartz under item 14, characterized in that additional elements have areas of twinning.

21. The seed for growing a single crystal of quartz according to any one of paragraphs. 14, 15, 17-19, Otley is rectangular in shape.

22. The seed for growing a single crystal of quartz according to any one of paragraphs. 14-19, wherein the additional elements in the cross section perpendicular to the longitudinal axis of the base of the seed, are L-shaped.

23. The seed for growing a single crystal of quartz according to any one of paragraphs. 14-19, wherein the additional elements in the cross section perpendicular to the longitudinal axis of the base seed, have the shape of a triangle.

24. The seed for growing a single crystal of quartz under item 14, wherein the additional elements are mechanically connected with basic seed butt.

25. The seed for growing a single crystal of quartz under item 14, wherein the additional elements are mechanically connected with basic seed overlap.

26. The seed for growing a single crystal of quartz under item 14, characterized in that additional elements at number two with each edge of the base of the seed is mechanically linked to her sides.

27. The seed for growing a single crystal of quartz, made in the form of three links of crystal quartz, with the longitudinal axis of the core component parallel to the axis Y, wherein the links are made Otdelenia axes Y and Z basic seed and additional elements are the same.

28. The seed for growing a single crystal of quartz on p. 27, characterized in that the basic seed is ZY slice.

29. The seed for growing a single crystal of quartz on p. 27, characterized in that the base of the seed has an XY slice.

30. The seed for growing a single crystal of quartz under item 27, wherein the additional elements are ZY slice.

31. The seed for growing a single crystal of quartz under item 27, wherein the additional elements are XY slice.

32. The seed for growing a single crystal of quartz under item 27, wherein the additional elements have areas of twinning.

33. The seed for growing a single crystal of quartz according to any one of paragraphs. 27 to 30, characterized in that additional elements in the cross section perpendicular to the longitudinal axis of the base seed, have the shape of a rectangle.

34. The seed for growing a single crystal of quartz according to any one of paragraphs. 27 to 30, characterized in that additional elements in the cross section perpendicular to the longitudinal axis of the base of the seed, are L-shaped.

35. The seed for growing a single crystal of quartz according to any one of paragraphs. 27 to 30, characterized in that additional elements in secterian single crystal quartz on p. 27, characterized in that additional elements are mechanically connected with basic seed butt.

37. The seed for growing a single crystal of quartz under item 27, wherein the additional elements are mechanically connected with basic seed overlap.

38. The seed for growing a single crystal of quartz under item 27, wherein the additional elements at number two with each edge of the base of the seed is mechanically linked to its lateral sides.

 

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FIELD: crystal growth.

SUBSTANCE: diaphragm is made of two interconnected metallic disks arranged one above the other. The bottom disk is mounted at the top boundary of the solution zone of charge and provided with an opening at the center. The top disk is mounted at the bottom boundary of the zone of crystal growth and provided with openings distributed throughout the surface of the disk. The diameters of the openings in the bottom disk are 1-75% of the diameter of the disk.

EFFECT: enhanced quality of crystals.

6 cl, 3 dwg

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