The seed for growing a single crystal of quartz (options)

 

(57) Abstract:

The invention relates to a means of growing single crystals from solutions by applying pressure, in particular by the hydrothermal method, and can be used in the manufacture of bare wafers of large size. The inventive seed in the first embodiment contains a basic seed-based or XY ZY slice, mechanically attached perpendicular to the edges additional elements - sides whose length L is related to the length l of the base of the seed-base ratio L=ltg60o-h, where h is the size of the base of the seed-base on the x-axis of the Seed in the second embodiment contains a basic seed-based or XY ZY slice and mechanically attached to its edges at right angles additional elements - the sides are directed in the region of +X, and additional elements - the sides are directed in region X. the Ratio of the sizes of the following: the length of the optional elements of the lateral sides in the direction of the field +X is from 1/4 to 1/2 L, in the direction of the field-X - 1/2 to 3/4 L, and the length l of the base of the seed-base is related to the total length L of additional elements - sides in the direction of +the monolith from the base of the seed, additional elements in the region of +X and an additional element, which is a continuation of one of the additional elements in region X. the Invention allows to increase the size of the seed on the y-axis. 3 S. and 2 C.p. f-crystals, 4 Il.

The invention relates to a means of growing single crystals from solutions by applying pressure, in particular by the hydrothermal method, and can be used in the manufacture of bare wafers for growing crystals of large size.

The problem is getting a dose of rectangular shape and of large size. Crystal quartz is the most rapidly growing in the direction of the axis Z and +X, twice-three times slower in the direction of the axis X and almost not growing in the direction of the Y axis; the grown crystal has the form of a hexagonal prism faces which are inclined at an angle 30oto the axis Y. in Order to get a rectangular flat seed required length on the Y-axis for single crystal growth is necessary to use a rare natural crystals with the required dimensions.

Known seed for growing a single crystal of quartz, described in the article authors Yutaka Mikawa and other "New technique to decrease dislocations in synthetic quartz crystal" in Proceed of the 1999 IEEE International Fr. Contr. Sump. 1999, Micro ZY slice.

A disadvantage of the known seed is the shortening of the Y-dimension due to the presence of oblique m-surfaces for the sector +X quartz crystal. Because in the direction of the Y-axis of the crystal is practically not growing, and formed during the growth of the sector +X face of the hexagonal prism m inclined at an angle of 30oto the Y-axis, it is necessary to preserve the rectangular shape of shortening the seed on the y axis.

Closest to the technical nature of the first two options the performance of the proposed seed is the seed that is described in the same testimony 17043 utility model priority from 26.09.2000, CL 30 In 7/10 and has been selected as a prototype.

Known seed, made in the form of the triangular open in the direction of the field +X frame made of crystal quartz, the basis of which has or XY ZY slice is a compound of the base of the seed-base and additional elements-sides, mechanically attached at an angle 90180oto the edges of the base of the seed, and the directions of axes Y and Z basic seed and additional elements are the same.

Closest to the technical nature of the claimed in the third embodiment, its execution is the seed for as a prototype.

Known seed is made in the form of the triangular open in the direction of the field +X frame, cut one piece from a plate of crystalline quartz ZY slice so that the base-X parallel to the Y-axis, and the sides parallel to the x axis.

The disadvantage of this seed is that their sizes on the Y-axis are not large enough for the above reasons.

The purpose of the claimed invention in all three versions of the is the increase in the size of the seed on the y axis.

This goal is achieved by the fact that:

in the first embodiment, the seed for growing a single crystal of quartz, made in the form of a composite triangular open in the direction of the field +X frame made of crystal quartz, consisting of basic seed-base and additional elements - sides, mechanically attached at an angle of 90oto the edges of the base of the seed, having cut or XY ZY, and directions of axes Y and Z basic seed and additional elements are the same, according to the invention, the length l of the base of the seed-base is related to the length L of additional elements - sides ratio L= ltg60o-h, where h is the size of the base satrapy in the form of a composite triangular open in the direction of the field +X frame made of crystal quartz, consisting of basic seed - base and additional elements - sides, mechanically attached at an angle of 90oto the edges of the base of the seed, having cut or XY ZY, and directions of axes Y and Z basic seed and additional elements are the same, according to the invention, additional elements - the sides are extended in the direction of the field is X, forming with the base seed the second trilateral open in the direction of region X of the frame, the length of additional elements in the direction of the field +X is depending on the physical properties of quartz from 1/4 to 1/2 L, in the direction of the field-X - 1/2 to 3/4 L, and the length l of the base of the seed associated with the total length L of additional elements - sides in the direction of the fields +X and-X by the relation L=ltg60o-h, where h is the size of the base of the seed on the X-axis; and basic seed may be made of a composite of two parts of length 2l.

In this part of the seed, including basic seed-based and additional elements - lateral sides in the direction of the field is X, can be made monolithic;

in the third embodiment, the seed for growing a single crystal of quartz, made in the form of tripartite nezamknutoi seed-base and perpendicular thereto additional elements - sides, according to the invention one of the additional elements - sides extended in the direction of the field is X and is made as one piece with the frame, the length of additional elements - sides in the direction of the field +X is from 1/4 to 1/2 L, in the direction of the field-X - 1/2 to 3/4 L, and the length l of the base of the seed associated with the total length L of additional elements - sides in the direction of +X and-X by the relation L= ltg60o-h, where h is the size of the base of the seed on the x-axis.

As for growing a single crystal from the seed, executed in the first embodiment, the region +X grows to fill the frame for the entire length of additional elements - sides, making the cut crystal diagonally formed during crystal growth, receive elongated along the Y-axis of the seed crystal in the form of thin plates X slice, which then grow in a known manner the crystal required width.

When growing a single crystal on the seed crystal, made according to the second variant, in the same way the seed, cut diagonally formed during the growth of the rectangle-crystal filled in both frameworks, due to the selected aspect ratio while maintaining the rectangular shape has nacoleia additional element in the +X and an additional element in the field-X, it also has a considerable length in the y-axis.

Declare the seed for growing a single crystal of quartz in all variants of its implementation has novelty in comparison with the prototype, differing from him in the first embodiment, the ratio of the sizes of the basic seed-base and additional elements - sides, and the second and third options - extension, respectively, both or one of the additional elements - sides in the region X, the ratio of additional elements in the areas of +X and-X between themselves and with the size of the base of the seed, ensuring the achievement of a specified result.

The applicant did not know the technical solutions with the combination specified in each of the three variants of signs for achieving a given result, so he believes that the technical solution meets the criterion of "inventive step".

Declare the seed in all variants of its implementation can be widely used for seed, having a greater length along the Y-axis, and therefore meets the criterion of "industrial applicability".

The invention is illustrated in the drawings, which show:

in Fig.1 - run for the OI l);

in Fig.3 - run seed for the second variant (with basic seed of length 2l);

in Fig.4 - run seed for the third option.

Declare the seed for growing a single crystal of quartz in the first embodiment contains a basic seed-base 1 or XY ZY slice, mechanically attached perpendicular to the edges additional elements - sides 2' and 2", with length L is related to the length l of the base of the seed - base l ratio L=ltg60o-h, where h is the size of the base of the seed on the X-axis (Fig.1).

Declare the seed in the second embodiment contains a basic seed - base 1 or XY ZY slice and mechanically attached to its edges at right angles additional elements - sides 2 directed in the region of +X, and additional elements - lateral sides 3, aimed in region X. the Ratio of the sizes of the following: the length of the optional elements 2 in the direction of the field +X is from 1/4 to 1/2 L, in the direction of the field-X - 1/2 to 3/4 L, and the length l of the base of the seed-base is related to the total length L of additional elements - sides ratio L= ltg 60o-h, where h is the size of the base of the seed on the X-axis (Fig.2).

Basic ZAT and in both cases, in the second embodiment, additional elements - the sides 3 in the direction of the field-X can be made as one piece with the base seed-1 or as a composite with elements 2.

In the third embodiment, the seed is made from monolithic base seed 1, additional elements 2 in the +X and the additional element 3, which is a continuation of one of the additional elements 2 in the region x

Mechanical attachment of additional elements - sides to the base seed-based and basic parts of the seed to each other is, for example, using wire, clamps or other means (not shown).

When placing the seed in the autoclave in conventional hydrothermal environment under pressure during growth of the seed is filling the frame in the direction of the field +X (I), and in areas of the +X and-X (II and III). However, in the-X growth of the single crystal occurs at the expense of sectors +X.

The growth conditions can be, in particular, pressure 400-1200 ATM and the temperature difference between the area of growth and dissolution from 5 to 30oWhen the crystallization temperature of 300-400oWith alkali or soda solutions.

Due to the selected ratio of additional elements and basic satiny angle 30oto the Y-axis, but with the large size of the grown crystal, filling the frame at the height of the additional elements - sides, to obtain a rectangular plate make the cut on the diagonal of the resulting crystal and receive the seed of a great length along the Y-axis (approximately 2 times the length of the base of the seed Y-axis).

In comparison with prototypes declared seed in all variants of its implementation allows to obtain a seed crystal of a large length along the y-axis.

1. The seed for growing a single crystal of quartz, made in the form of a composite triangular open in the direction of the field +X frame made of crystal quartz, consisting of basic seed-base and additional elements - sides, mechanically attached at an angle of 90oto the edges of the base of the seed, having cut or XY ZY, and directions of axes Y and Z basic seed and additional elements are the same, characterized in that the length l of the base of the seed-base is related to the length L of additional elements ratio L= ltg60o-h, where h is the size of the base of the seed on the x-axis.

2. The seed for growing a single crystal of quartz, made in the form of a composite triangular open at ypravlenueto - sides, mechanically attached at an angle of 90oto the edges of the base of the seed, having cut or XY ZY, and directions of axes Y and Z basic seed and additional elements are the same, characterized in that additional elements - the sides are extended in the direction of the field is X, forming with the base seed at the base of the second triangular open in the direction of region X of the frame, the length of additional elements in the direction of the field +X is from 1/4 to 1/2 L, in the direction of the field-X - 1/2 to 3/4 L, and the length 1 of the basic seed is associated with a total length L of additional elements - sides in the direction of the fields +X and-X by the relation L= ltg60o-h, where h is the size of the base of the seed on the x-axis.

3. The seed for growing a single crystal of quartz under item 2, characterized in that a part of it, including basic seed-based and additional elements - lateral sides in the direction of the field is X made monolithic.

4. The seed for growing a single crystal of quartz under item 2 or 3, characterized in that the base of the seed is made of a composite of two parts and has a length of 2l.

5. The seed for growing a single crystal of quartz, made in the form of trilateral not the de basic seed-base and perpendicular thereto additional elements - lateral sides, wherein one of the additional elements extended in the direction of the field-X and made as one piece with the frame, the length of additional elements - sides in the direction of the field +X is from 1/4 to 1/2L, in the direction of the field-X - 1/2 to 3/4L, and the length 1 of the basic seed-base associated with the total length L of additional elements - sides in the direction of +X and-X by the relation L= ltg60o-h, where h is the size of the base of the seed on the x-axis.

 

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FIELD: crystal growth.

SUBSTANCE: diaphragm is made of two interconnected metallic disks arranged one above the other. The bottom disk is mounted at the top boundary of the solution zone of charge and provided with an opening at the center. The top disk is mounted at the bottom boundary of the zone of crystal growth and provided with openings distributed throughout the surface of the disk. The diameters of the openings in the bottom disk are 1-75% of the diameter of the disk.

EFFECT: enhanced quality of crystals.

6 cl, 3 dwg

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