Functional converter unit of the crystal oscillator and method of adjustment

 

(57) Abstract:

The invention relates to the field of forming the control signal, which is used to compensate for the temperature dependence of the frequency of the output oscillation unit of the crystal oscillator. Block crystal oscillator with temperature compensation includes a voltage source of constant magnitude, independent of the ambient temperature, the circuit of the temperature sensor to generate a voltage proportional to the ambient temperature, the control circuit, which generates a control voltage used to compensate for the temperature characteristics of the crystal oscillator in the whole range of ambient temperatures by a piecewise linear approximation of the cubic characteristic continuous lines. Technical result achieved is the elimination of the jump frequency caused by controlling voltage, and the simplification of the adjustment carried out for the purpose of temperature compensation. 10 C. and 18 h.p. f-crystals, 28 ill.

The invention relates to a functional Converter, designed to provide a control signal that is applied to compensate for the temperature dependence costatolide such functional Converter and how the adjustment unit of the crystal oscillator.

Recently there has been a dramatic increase in demand for portable electronic equipment that requires a compact and high-precision quartz blocks generators that are essential for the formation of the reference clock signals. The oscillation frequency of the crystal oscillator in the unit crystal oscillator has a temperature characteristic that contains cubic and linear components, depending on the properties of the quartz crystal used in the quartz oscillator. In particular, if the x-axis to postpone the temperature Tandthe environment, and the ordinate axis to postpone the frequency f of the oscillations, as shown in Fig.26(a), the frequency f of oscillation of the crystal oscillator, temperature characteristic which is not compensated, has a view on the merits of the cubic curve 101 with the difference between the maximum and minimum values of approximately 10-10-6before 30-10-6. Here the temperature Tandthe environment is assumed to be equal to approximately -30oC to +80oC., Respectively, as shown in Fig.26 (b), where x-axis is temperature Tandthe environment, and the ordinate axis delayed control voltage is at the generator, the value of df/dtandcan be equal to zero and the frequency f of the oscillations can be essentially independent of temperature, as shown in Fig.26 (C).

The temperature dependence can be compensated, for example, as follows. Warstory diode (diode variable capacitance) that is used to tune the frequency, is connected to a quartz oscillator and to compensate for the temperature characteristics of the crystal oscillator to varaktorami the diode is applied the control voltage having a temperature characteristic with cubic and linear components. Thus, the temperature characteristic of the oscillation frequency can be stabilized.

In fact, technically it is very difficult to form the control voltage Vc having the ideal temperature characteristic, which is shown in Fig.26 (b). Therefore, in order to achieve temperature compensation of the oscillation frequency, usually in some form method control voltage having pseudorabies temperature characteristic.

Below with reference to the attached drawings will be considered a normal block of the crystal oscillator with temperature compensation described in lined with the patent application Averavage generator. When temperature compensation of this oscillator his linear-cubic temperature characteristic is divided into several intervals, temperature, and voltage, which are functions of the temperature in the respective temperature ranges, are approximated by piecewise linear approximation to obtain the straight lines of the temperature dependence.

In particular, the storage device 111 (Fig.27) stores each temperature range, the temperature coefficient (the coefficient of proportionality) for line temperature dependence in the temperature and the voltage magnitude at room temperature for the temperature dependence of each interval graph voltage. Chart data voltage corresponding to the ambient temperature, which is determined by the circuit 112 temperature sensor, selectively read from the storage device 111 and the specified control voltage is formed in the circuit 113 of the amplifier based on the read data of the control voltage. Created thus the control voltage is applied to a quartz oscillator 114, controlled by voltage, so that the oscillation frequency can be stabilized pore the tours performs piecewise linear approximation, using analog-to-digital conversion. Therefore, between the intervals of temperatures, there is the jump frequency, namely, the violation of the continuity of the curves of voltage depending on time, as shown in Fig.28 (C). To avoid this jump frequency between circuit 113 of the amplifier and a quartz oscillator 114, a voltage controlled, turns on the circuit 115 sample memory, providing a smooth change in frequency with time.

However, since such conventional unit crystal oscillator with temperature compensation uses an analog-to-digital conversion for piecewise-linear approximation to form a control voltage, which is required for temperature compensation, it inevitably creates noise and jump frequency cannot be avoided in principle. In addition, for this unit required the oscillator and, therefore, there arises a problem of interference from the clock signal. Another disadvantage is that due to the time constant circuit 115 sample-remember the time required to stabilize oscillation frequency after the generator.

In addition, in the measurement and control of temperature characteristic often is mperature environment, to compensate for this temperature characteristic. Therefore, an error may occur when the adjustment. In order to reduce the error, you need to increase the number of intervals, which is divided temperature range, which leads to another problem of increasing the capacity of the memory device 111.

The purpose of this invention is to eliminate the jump frequency caused by controlling voltage, and the simplification of the adjustment carried out for the purpose of temperature compensation.

To achieve the above objectives the control voltage for temperature compensation is formed according to the invention using only analog circuitry, in principle, free from spikes and frequency.

In accordance with this invention the functional Converter to provide a control signal as a function of temperature provides a first method of forming the analog signal to generate and supply to the output of the specified analog signal that is not dependent on the ambient temperature; a second circuit forming the analog signal to generate and supply to the analog signal, depending on the ambient temperature; and a circuit driven by the analog I signal, and for generating control signals corresponding to the five intervals of temperature, obtained by dividing the possible range of ambient temperatures on the first, second, third, fourth and fifth intervals of temperatures in the specified order with no gaps in the direction from low temperature to high temperature; and the control circuit outputs the first control signal, output the magnitude of which is proportional to the temperature increase from the first gain when the ambient temperature is within a first temperature range; a second control signal, the output value of which is continuous with the first control signal and is equal to the specified value does not depend on temperature, when the ambient temperature is the second temperature range; and the third control signal, the output value of which is inextricably with the second control signal and is proportional to the temperature increase with the second coefficient when the ambient temperature is in the third temperature range; a fourth control signal, the output value of which is continuous with the third Manager is seeking in the fourth temperature range, and the fifth control signal, the output value of which is continuous with the fourth control signal and varies proportionally with the increase in temperature with the third factor, which has the same sign as the first factor.

Thus, functional Converter in accordance with this invention includes a first method of forming the analog signal to generate and supply to the output of the specified analog signal that is not dependent on the ambient temperature, a second circuit forming the analog signal to generate and supply to the analog signal, depending on the ambient temperature, and a control circuit for receiving the signal from the first generation analog signal and the signal from the second generation of the analog signal and for generating control signals, continuous in the corresponding range of temperature from low temperature to high temperature. Accordingly, although the ambient temperature is divided into five intervals, in the border area between them does not occur variations in the frequency, which leads to providing a good approximation with a small error. In addition, since the functional Converter content is omen from the clock signal can also be avoided.

Further, when the ambient temperature is within the first temperature range, the output is a first control signal, output the magnitude of which varies proportionally with the increase in temperature with a first coefficient; when the ambient temperature is the second temperature interval, the output is the second control signal having a given value, independent of temperature; when the ambient temperature is in the third temperature range, the output is the third control signal, output the magnitude of which is proportional to temperature with a second coefficient; when the ambient temperature is within the fourth temperature range, the output is the fourth control signal, have the specified value does not depend on temperature, and when the ambient temperature is in the fifth temperature range, the output is the fifth control signal, output the magnitude of which varies proportionally to the temperature with the third factor, which has the same sign as the first factor. Accordingly, a function of temperature, with positive cubic component, you can compensate with pomoshyu, used for approximation, equal to five, i.e. relatively small, the approximation can be performed with sufficient accuracy. Therefore, the number of combinations of adjustment parameters, such as coefficients of proportionality and constants for the lines used in the piecewise-linear approximation, can be reduced and, therefore, adjustment of the respective functions of temperature, which must be compensated, can be simplified.

In the preferred case, the functional Converter analog signal is a voltage signal, the first and third coefficients are negative, and the second factor is positive. Thus, a function of temperature, with positive cubic component, can be exactly compensated by a piecewise linear approximation with five straight line segments. In addition, when the voltage signal is used as the control signal supplied to the circuit of the crystal oscillator, voltage-controlled to maintain the desired oscillation frequency by the control voltage, can be accurately obtained the desired oscillation frequency, its dependence on temperature of the environment will be minor.

In the preferred case, the functional Converter further comprises a storage device, and when the ambient temperature is within the first temperature range, the memory device outputs the control scheme, polzuemoy for the formation of the first control signal, and its output value to the coefficient of the cubic component of the temperature characteristics of the oscillation frequency of the crystal oscillator; when the ambient temperature is the second temperature range, the memory device outputs the control circuit a second value of the aspect ratio that determines the ratio of the constant relating temperature used to generate the second control signal, and its output value, the coefficient of the cubic component; when the ambient temperature is in the third temperature range, the memory device outputs the control circuit a third value of the aspect ratio that determines the ratio of the coefficient of proportionality between temperature, used to generate the third control signal, and its output value to the coefficient of the cubic component; when the ambient temperature is within the fourth temperature range, the memory device outputs the control circuit fourth value ratio, which determines the ratio of the constant relating temperature used to generate the fourth control signal s in the fifth temperature range, the memory device outputs the control circuit fifth largest proportions that defines the ratio of the coefficient of proportionality between the temperature used for forming the fifth control signal, and its output value to the coefficient of the cubic component; a storage device stores the first value of the aspect ratio, the second largest proportion, the third largest proportion, the fourth largest proportion and the fifth largest proportions. Thus, when the correction coefficient of the cubic component of the temperature characteristics of the crystal oscillator, permanent circuits corresponding to the coefficients of proportionality lines, and permanent circuits, corresponding to the constants (initial y) lines can be set by the group. Therefore, the random deviations of the coefficient of the cubic component and the coefficient of linear component of the temperature characteristics defined by the angle at-cut quartz resonator, and the random deviations of the absolute value of the oscillation frequency can be easily and accurately adjusted.

In the preferred case in functional Converter control circuit includes a first n-p-n transistor, which is actionline ambient temperature, and the emitter is connected to the input of the first current source; a second n-p-n transistor, whose collector is supplied power supply voltage, the base served a second electrical signal that retain a specified amount regardless of the ambient temperature, and the emitter is connected to the input of the first current source; a third n-p-n transistor, whose collector is supplied power supply voltage, the base served the third electrical signal, increasing in proportion to the ambient temperature, and the emitter is connected to the input of the first current source; a fourth n-p-n transistor, whose collector and base connected to the output of the second current source having a current value is two times less than the amount of current of the first current source, and the emitter is connected to the input of the first current source; a first p-n-p transistor, whose base is connected to the collector of the fourth n-p-n transistor, the emitter is connected to an output of the third current source and the collector is grounded; a second p-n-p transistor, whose base is supplied to the fourth electrical signal that retain a specified amount regardless of the ambient temperature, the emitter is connected to an output of the third current source and the collector is grounded; a third p-n-p transistor, Comedy, the emitter is connected to an output of the third current source and the collector is grounded, and the fourth p-n-p transistor, whose emitter is connected to an output of the third current source, and a collector and base connected to the input of the fourth current source having a current value is two times less than the amount of current of the third current source, and the fourth n-p-n transistor selects from among the first, second and third electrical signals, the electrical signal having the maximum voltage value, and outputs the selected electrical signal at its collector as a sixth electrical signal; the fourth p-n-p transistor selects from among the fourth, fifth and sixth electrical signal electrical signal having a minimum voltage value, and outputs the selected electrical signal at its collector as the seventh electrical signal, and the control circuit outputs the seventh electrical signal as mentioned control signal. Thus, the control signal can be accurately formed using only analog signals.

In the preferred case in functional Converter between the emitter of the first n-p-n transistor and the first current source of posledovateli and the first current source, a third resistor connected in series between the emitter of the third n-p-n transistor and the first current source, a fourth resistor connected in series between the emitter of the fourth n-p-n transistor and the first current source, a fifth resistor connected in series between the emitter of the first p-n-p transistor and the third current source, a sixth resistor connected in series between the emitter of the second p-n-p transistor and the third current source, a seventh resistor connected in series between the emitter of the third p-n-p transistor and the third current source and the eighth resistor connected in series between the emitter of the fourth p-n-p transistor and the third current source. Thus, the connecting parts between the control signals at the boundaries of the intervals of temperatures can be smoothed and therefore, even when using a piecewise linear approximation of the error of approximation in the areas of connections can be made small.

Block crystal oscillator according to this invention contains the first diagram of the formation of the analog signal to generate and supply to the output of the specified analog signal that is not dependent on the ambient temperature; a second circuit formation analy environment; a control circuit for receiving the signal from the first generation analog signal and the signal from the second generation of the analog signal, and for generating control signals corresponding to the five intervals of temperature, obtained by dividing the possible range of ambient temperature to the first temperature, second temperature, the third temperature range, the fourth range of temperatures and the fifth temperature interval in the specified order with no gaps in the direction from low temperature to high temperature; and a diagram of the crystal oscillator that receives the control signal from the control circuit and which is controlled with this signal in order to maintain a given oscillation frequency, and the control circuit compensates for the temperature dependence of the oscillation frequency supplied to the output circuit of the crystal oscillator by feeding the output of the first control signal, the output value of which decreases proportionally with the increase in temperature, when the ambient temperature is within a first temperature range; a second control signal, the output value of which is continuous with the first Manager of sIgA second temperature range; the third control signal, the output value of which is inextricably with the second control signal and increases proportionally with the increase in temperature, when the ambient temperature is in the third temperature range; a fourth control signal, the output value of which is continuous with the third control signal and has a given value, independent of temperature when the ambient temperature is within a fourth range of temperatures, and the fifth control signal, the output value of which is continuous with the fourth control signal, and decreases proportionally with the increase in temperature, when the ambient temperature is in the fifth temperature range.

Block crystal oscillator according to this invention, contains the first diagram of the formation of the analog signal to generate and supply to the output of the specified analog signal that is not dependent on the ambient temperature; a second circuit forming the analog signal to generate and supply to the analog signal, depending on the ambient temperature, and a control circuit for receiving the signal from the first circuit formation analogous, continuously corresponding integer intervals within a temperature range from low temperature to high temperature. Accordingly, even when the ambient temperature is divided into five intervals, frequency jumps at the boundaries between the intervals does not occur, which leads to achieving a good approximation. In addition, when the ambient temperature is within the first temperature range, output the first control signal, the magnitude of which decreases in proportion to the increase in temperature; when the ambient temperature is the second temperature range, output the second control signal having a given value, independent of temperature; when the ambient temperature is in the third temperature range, output the third control signal whose magnitude varies in proportion to the temperature; when the ambient temperature is within the fourth temperature range, output the fourth control signal having a given value, independent of temperature, and when the ambient temperature is in the fifth temperature range, output a fifth control signal, the output value of which umenshatesa component, can be corrected by a piecewise linear approximation with five straight line segments.

In the preferred case in quartz generator (on the graph of the first control signal, second control signal, the third control signal, the fourth control signal and the fifth control signal representing the dependence of the frequency of the crystal oscillator from the ambient temperature) of the first control signal and the fifth control signal are symmetrical about a point on the graph defined by the temperature of the inflection point of the temperature characteristics of the oscillation frequency of the crystal oscillator and the value of the third control signal when the temperature of the inflection point, the second control signal and the fourth control signal are symmetric about this point and the third control signal is symmetric about this point. Thus, the number of combinations of adjustable parameters such as coefficients and the constant of proportionality for the lines used in the piecewise-linear approximation, can be further reduced, which leads to a further simplification of the adjustment of the respective f what about the generator further comprises a storage device, moreover, when the ambient temperature is within the first temperature range, the memory device outputs the control circuit of the first size aspect ratio that determines the ratio of the coefficient of proportionality between the temperature used to generate the first control signal, and its output value to the coefficient of the cubic component of the temperature characteristics of the oscillation frequency of the crystal oscillator; when the ambient temperature is the second temperature interval, the memory device outputs the control circuit a second value of the aspect ratio that determines the ratio of the constant relating temperature used to generate the second control signal, and its output value, the coefficient of the cubic component; when the ambient temperature is in the third temperature range, the memory device outputs the control circuit a third value of the aspect ratio that determines the ratio of the coefficient of proportionality between the temperature used to generate the third control signal, and its output value to the coefficient of the cubic component; when the ambient temperature is the portion, determining the ratio of the constant relating temperature used to generate the fourth control signal, and its output value, the coefficient of the cubic component, when the ambient temperature is in the fifth temperature interval, the memory device outputs the control circuit fifth largest proportions that defines the ratio of the coefficient of proportionality between the temperature used for forming the fifth control signal, and its output value to the coefficient of the cubic component; and a storage device stores the first value of the aspect ratio, the second largest proportion, the third largest proportion, the fourth largest proportion and the fifth largest proportions. Thus, when the correction coefficient of the cubic component of the temperature characteristics of the crystal oscillator, permanent circuits corresponding to the coefficients of proportionality for lines, and permanent circuits, the corresponding constants for lines, can be set by the group. Therefore, the random deviations of the coefficient of the cubic component and the coefficient of linear component of the temperature characteristics associated with the angle of at-cut quartz is ektirovanii.

In the preferred case, the oscillator control circuit includes a first n-p-n transistor, whose collector is supplied power supply voltage, the base served first electrical signal, decreasing in proportion to the ambient temperature, and the emitter is connected to the input of the first current source; a second n-p-n transistor, whose collector is supplied power supply voltage, the base served a second electrical signal that retain a specified amount regardless of the ambient temperature, and the emitter is connected to the input of the first current source; the third n-p-n transistor, whose collector is supplied power supply voltage, the base served the third electrical signal, increasing in proportion to the ambient temperature, and the emitter is connected to the input of the first current source; a fourth n-p-n transistor whose collector and base connected to the output of the second current source having a current value is two times less than the amount of current of the first current source, and the emitter is connected to the input of the first current source; a first p-n-p transistor, whose base is connected to the collector of the fourth n-p-n transistor, the emitter is connected to an output of the third current source and the collector is nnow value regardless of the ambient temperature, the emitter is connected to an output of the third current source and the collector is grounded; a third p-n-p transistor, whose base is supplied fifth electrical signal, decreasing in proportion to the ambient temperature, the emitter is connected to an output of the third current source and the collector is grounded, and the fourth p-n-p transistor, whose emitter is connected to an output of the third current source, and a collector and base connected to the input of the fourth current source having a current value is two times less than the amount of current of the third current source, and the fourth n-p-n transistor selects from among the first, second and third electrical signals, the electrical signal having the maximum voltage value, and outputs the selected electrical signal at its collector as a sixth electrical signal; a fourth p-n-p transistor selects from among the fourth, fifth and sixth electrical signal electrical signal having a minimum voltage value, and outputs the selected electrical signal at its collector as a seventh electrical signal, and the control circuit delivers at its output a seventh electrical signal as a control signal. Thus control signal case, in the block of the crystal oscillator in series between the emitter of the first n-p-n transistor and the first current source is enabled first resistor, a second resistor connected in series between the emitter of the second n-p-n transistor and the first current source, a third resistor connected in series between the emitter of the third n-p-n transistor and the first current source, a fourth resistor connected in series between the emitter of the fourth n-p-n transistor and the first current source, a fifth resistor connected in series between the emitter of the first p-n-p transistor and the third current source, a sixth resistor connected in series between the emitter of the second p-n-p transistor and the third current source, a seventh resistor connected in series between the emitter of the third p-n-p transistor and the third current source, and the eighth resistor connected in series between the emitter of the fourth p-n-p transistor and the third current source. Thus, the connecting parts between the control signals at the boundaries of the intervals of temperatures can be smoothed and therefore, even when using a piecewise linear approximation of the error of approximation in the areas of connections can be made small.

In the main the injury parameters (which are used to compensate for the temperature dependence of the frequency of the oscillation circuit crystal oscillator) control signals, from the first to the fifth, generated by the control circuit by changing each of the parameters in relation to each of the control signals; and a programmable permanent memory for storing the optimal parameter values for each of the control signals. Thus, the control signals can be adjusted using modified appropriately input from outside the memory device, for each of these control signals, and can be determined the optimum characteristics of the control signal. In addition, we found optimal data after recording them in the programmable permanent memory can be read in real time operating conditions to confirm that the control signal can be accurately formed in accordance with the ambient temperature.

In the preferred case, the oscillator further comprises optimization tools to optimize control signals generated by the control circuit, independently from each other and in accordance with the coefficient of the cubic component of the temperature characteristics, the coefficient of linear component temperature characterise temperature characteristics of the oscillation frequency of the circuit of the crystal oscillator. Thus the temperature dependence of the oscillation frequency of each oscillator can be accurately characterized, resulting in improved characteristics of the approximation used for temperature compensation.

The method of adjustment of the block of crystal oscillator in accordance with this invention is used in the power oscillator containing a first method of forming the analog signal to generate and supply to the output of the specified analog signal that is not dependent on the ambient temperature; a second circuit forming the analog signal to generate and supply to the analog signal, depending on the ambient temperature; a control circuit for receiving the signal from the first generation analog signal and the signal from the second generation of the analog signal, and to generate and supply to the output control signals corresponding to the five intervals of temperature, obtained by dividing the possible range of ambient temperatures on the first, second, third, fourth and fifth intervals of temperatures, in the specified order with no gaps in the direction from low temperature to high temperature, and chemtob to maintain a given oscillation frequency, random access memory for storing control signals from the first to the fifth produced by the control circuit, (these parameters are used for compensation of the temperature dependence of the frequency of the oscillation circuit crystal oscillator) with the change of each parameter in relation to each of the control signals, and a programmable permanent memory for storing the optimal parameter values for each of the control signals; and the control circuit outputs the first control signal, the output value of which decreases in proportion to the increase in temperature, when the ambient temperature is within a first temperature range; a second control signal, output variable which is continuous with the first control signal and has a preset value regardless of the temperature, when the ambient temperature is the second temperature range; and the third control signal, the output value of which is inextricably with the second control signal and increases in proportion to the increase in temperature, when the ambient temperature is in the third temperature range; the fourth prannoy value does not depend on temperature, when the ambient temperature is within a fourth range of temperatures, and the fifth control signal, the output value of which is continuous with the fourth control signal, and decreases in proportion to the increase in temperature, when the ambient temperature is in the fifth temperature range.

The method includes the step of determining the individual parameters specific quartz oscillator) for definitions of these individual parameters by storage unit of the crystal oscillator at temperature, continuously changing from the first temperature to the fifth temperature range, and the parameter calculation control signals corresponding to the coefficient of the cubic component of the temperature characteristics, the coefficient of linear component of the temperature characteristics, the frequency deviation from the nominal frequency when the temperature of the inflection point and the temperature of the inflection point of the temperature characteristics of the circuit of the crystal oscillator, thus to make the temperature change of the frequency of the oscillation circuit crystal oscillator is essentially zero; the step of determining the characteristics of the control signals, generated by the control circuit, and the parameter calculation control signals corresponding to the coefficient of the cubic component of the temperature characteristics, the coefficient of linear component of the temperature characteristics, the frequency deviation from the nominal frequency when the temperature of the inflection point and the temperature of the inflection point; and a step of recording the optimal parameter for determining the quantities of changes of control signals per unit data corresponding to the parameters of the compensation temperature stored in the memory device, by measuring the value of changes in source temperature characteristics when data is changed corresponding to parameters of temperature compensation, determine the difference between the original parameters and individual parameters, determine the optimal parameters of the control signals thus in order to minimize said difference on the basis of the quantities of changes of control signals per unit data, and write the optimal parameter in a persistent storage device.

According to the method of the adjustment unit of the crystal oscillator in this invention each individual parameter of the control signal set is Imperator to the fifth temperature range, so that the temperature change of the oscillation frequency generated by the circuit of the crystal oscillator, was essentially zero. After determining each source parameter control signal, measuring the change in source temperature characteristics when data is changed corresponding to the setting temperature compensation data stored in the memory device determines the amount of change of the control signal to the data unit corresponding to the setting temperature compensation. After determining the difference between the original setting and individual parameter, the optimal setting of the control signal is determined based on the magnitude of the change control signal to the data unit in such a way as to make the difference small. Accordingly, the random deviations of the angle of at-cut quartz resonator, the random deviations of the oscillation frequency and the random deviations of the temperature of the inflection point can be easily and accurately adjusted for each block of the crystal oscillator. In addition, because the ambient temperature is divided into five intervals and uses a piecewise linear approximation using five lines, the number of parameters Krista and a permanent mass storage device can be made small and, therefore, you can easily achieve compactness of the entire block.

Fig. 1 is a functional block diagram showing the block of the crystal oscillator with temperature compensation according to the first form of embodiment of the invention.

In Fig.2 shows a diagram of the crystal oscillator, voltage-controlled block of the crystal oscillator with temperature compensation according to the first form of the invention,

In Fig. 3 shows a circuit diagram of a voltage source of constant magnitude and a temperature sensor in the unit crystal oscillator with temperature compensation according to the first form of embodiment of the invention.

In Fig.4 shows a detailed circuit diagram of the voltage source constant value in the block of the crystal oscillator with temperature compensation according to the first form of embodiment of the invention.

In Fig. 5 shows a detailed circuit diagram of the temperature sensor in the unit crystal oscillator with temperature compensation according to the first form of embodiment of the invention.

In Fig.6 shows another circuit diagram of a voltage source of constant magnitude and sensor Ambrette.

In Fig.7 shows another detailed circuit diagram of the voltage source constant value in the block of the crystal oscillator with temperature compensation according to the first form of embodiment of the invention.

In Fig. 8 shows another detailed circuit diagram of the temperature sensor in the unit crystal oscillator with temperature compensation according to the first form of embodiment of the invention.

In Fig.9 shows another detailed circuit diagram of the temperature sensor in the unit crystal oscillator with temperature compensation according to the first form of embodiment of the invention.

In Fig.10 shows the detailed electrical diagram of the control circuit for the unit crystal oscillator with temperature compensation according to the first form of embodiment of the invention.

In Fig. 11(a)-11(C) shows the compensation of the oscillation frequency of the circuit of the crystal oscillator, voltage controlled, by controlling the voltage of the crystal oscillator with temperature compensation according to the first form of the invention, and Fig.11(a) presents a graph showing the dependence of the oscillation frequency from the pace of the current dependence of the control voltage, used for temperature compensation and supplied to its output by the control circuit, and Fig. 11(C) graph showing how depends on the ambient temperature, the difference between the oscillation frequency and the nominal frequency by applying a control voltage to the circuit of the crystal oscillator voltage-controlled.

In Fig. 13 shows the detailed electrical circuit constant/random access memory in the unit crystal oscillator with temperature compensation according to the first form of embodiment of the invention.

In Fig.14 shows the timing diagram of the synchronization data entry in the constant/random access memory in the unit crystal oscillator with temperature compensation according to the first form of embodiment of the invention.

In Fig. 15 shows the electrical diagram of the control circuit for the unit crystal oscillator with temperature compensation according to the first modification of the first form of embodiment of the invention.

In Fig.16(a)-16(C) shows the compensation of the oscillation frequency of the circuit of the crystal oscillator, voltage controlled, by controlling the voltage of the crystal oscillator with the is) is a graph showing the dependence of the oscillation frequency from the ambient temperature to the implementation of temperature compensation, Fig. 16(b) is a graph showing the temperature dependence of the control voltage, which should be used for temperature compensation and which is formed by the control circuit, and Fig.16(C) is a graph showing how depends on the ambient temperature, the difference between the oscillation frequency and the nominal frequency by applying a control voltage to the circuit of the crystal oscillator voltage-controlled.

In Fig. 17(a)-17(C) shows the compensation of the oscillation frequency of the circuit of the crystal oscillator, voltage controlled, by controlling the voltage of the crystal oscillator with temperature compensation according to the third modification of the first form of the invention, and Fig. 17(a) is a graph showing the temperature dependence of the oscillation frequency to implement temperature compensation, Fig. 17(b) is a graph showing the temperature dependence of the control voltage, which should be used for temperature compensation and kotorri environment the difference between the oscillation frequency and the nominal frequency by applying a control voltage to the circuit of the crystal oscillator, voltage controlled.

In Fig.18 is a table for comparing the capacitances of the storage device required for various structures of a control circuit unit of the crystal oscillator with temperature compensation according to the first form of embodiment of the invention.

Fig. 19(a) is a graph showing the dependence of the oscillation frequency from the ambient temperature obtained by the different coefficients of the cubic component to implement temperature compensation, and Fig.19(b) is a graph showing the temperature dependence of the control voltage produced by the control circuit in the unit crystal oscillator according to the fourth modification of the first form of embodiment of the invention.

Fig. 20(a)-20(C) are graphs showing the formation of the control voltage, which is generated by the control circuit in the unit crystal oscillator according to the fourth modification of the first form of embodiment of the invention.

Fig. 21(a) is a graph showing the corresponding temperature dependence of the output control voltage of the control circuit unit of the crystal oscillator according to the fourth m ravago generator, a of Fig. 21(b) graph showing the difference between the ideal and the approximating control voltages.

In Fig.22 shows a block functional diagram of the Converter used for the temperature compensation unit of the crystal oscillator with temperature compensation according to the second form of embodiment of the invention.

In Fig. 23(a)-23(d) shows graphs intended to explain the changes of the control voltage by adjusting the parameters of temperature compensation and temperature of the inflection point in the unit crystal oscillator with temperature compensation according to the second form of embodiment of the invention.

In Fig.24 shows a block diagram illustrating the adjustment of the oscillation frequency in the unit crystal oscillator with temperature compensation according to a third form of embodiment of the invention.

In Fig.25 is a block diagram showing the adjustment unit of the crystal oscillator with temperature compensation according to a third form of embodiment of the invention.

Fig. 26(a)-26(C) are graphs illustrating the adjustment unit of the crystal oscillator with an ideal temperature compensation, and Fig. 26(a) is granai compensation Fig. 26(b) is a graph showing the temperature dependence of the control voltage used for temperature compensation, and Fig. 26(C) graph showing how depends on the ambient temperature, the difference between the oscillation frequency and the nominal frequency after implementation of temperature compensation.

In Fig. 27 shows a block diagram of a known unit of the crystal oscillator with temperature compensation.

In Fig. 28(a)-28(C) shows graphs illustrating temperature compensation in a known unit of the crystal oscillator with temperature compensation.

Below with reference to the attached drawings will be described first form of embodiment of the invention.

Fig. 1 is a functional block diagram of the unit crystal oscillator with temperature compensation according to the first form of embodiment of the invention. Unit 10 crystal oscillator with temperature compensation shown in Fig. 1 may be, for example, the generator of the reference clock signal in the mobile phone and it is required such precision stable frequency to the frequency deviation of the oscillation in the whole temperature range was within 2,510-6or Menelik 12 voltage constant value, which is the first scheme of formation of the analog signal to generate and supply to output a specified voltage that is not dependent on the ambient temperature; scheme 13 temperature sensor, which is the second method of forming the analog signal to generate and supply to the output voltage that varies in proportion to the ambient temperature; a third circuit 17 forming an analog signal for receiving the DC voltage supplied by the voltage source 12, and a voltage proportional to the temperature, with the output of the circuit 13 of the temperature sensor and to supply the output voltage that corresponds to a given temperature in each of the five intervals of temperatures, obtained by dividing the entire range of possible ambient temperature in five parts; circuit 14 control for receiving the voltage supplied from the third circuit 17 forming an analog signal, and to provide a control voltage Vc that is used for piecewise linear approximation of the cubic curve with a negative coefficient of the cubic component through the use of intrinsically straight lines to compensate for the temperature characteristics of the crystal oscillator in the whole range is vtorogo control using the control voltage Vwithtaken from the circuit 14 of the control, so that the oscillation frequency was specified value; and a constant/random access memory 16 for storing settings temperature compensation used to compensate for the temperature characteristics of the control voltage Vwithto optimize the frequency of oscillations produced by the generator 15, a voltage controlled in accordance with the control voltage Vwithgenerated by the circuit 14 of the control.

In this case, the ambient temperature may be the temperature of the crystal oscillator 15, a voltage-controlled or temperature unit 10 of the crystal oscillator.

Fig. 2 is a circuit diagram example of the crystal oscillator 15, voltage controlled, in this form of the invention and shows a known variant of this scheme. As shown in Fig.2, the input 21 for receiving the control voltage Vwithconnected with one of the conclusions of the quartz resonator 23 through resistor 22 offset established between them. Between the resistor 22 offset and the quartz resonator 23 is connected to the output of the cathode arachinovo diode 24 having a grounded output anode. The oscillation frequency kVA the order Vc. Another conclusion of the quartz resonator 23 is connected with the circuit 25 crystal oscillator with capacitive feedback, and the output signal foutthis circuit 25 is supplied to the output 26.

Below with reference to the attached drawings, the detailed description of the source 12 voltage constant magnitude and circuit 13 and the temperature sensor in this form of the invention.

Fig. 3 is a wiring diagram showing the circuit configuration 30 forming a monotonically diminishing stress, which also includes a source 12 voltage constant and the circuit 13 of the temperature sensor shown in Fig.1, and is intended for forming and feeding the output of the first control voltage y1or the fifth control voltage y5, diminishing in proportion to the increase in temperature Tandenvironment. As shown in Fig, 3, the circuit 30 forming a monotonically descending voltage contains source 31 voltage constant value, the circuit 32 of the forming zone of the reference voltage and circuit 33 current mirror acting as a temperature sensor. The reference voltage V0approximately equal to 1.25 V and does not depend on temperature Tandselect the s is generated based on the reference voltage Voin the source 31 voltage constant value.

Current IT0depending on temperature Tandthe environment is created in a similar manner in the circuit 32, and the current Itproportional to the temperature Tandthe environment is created in the schema 33 current mirror so that the current difference I0-Itbetween the constant current I0and the current Itproportional to the temperature Tandthe environment could be taken from a node between the source 31 and the voltage of constant magnitude and circuit 33 current mirrors. Differential current I0-Itwe are transforming the current/voltage using a resistor 34; thus is formed the first control voltage y1or the fifth control voltage y5which decreases in accordance with increasing temperature Tandenvironment. In this case, the absolute value of the first control voltage y1or the fifth control voltage u5is set by adjusting the resistance values of the resistor 31A to which the voltage Vccthe power source 31 voltage constant value.

Fig.4 shows another embodiment of the source 31 voltage Posa non-inverting input of which a reference voltage Vothat does not depend on temperature Tandthe environment and produced by the circuit 32 of the forming zone of the reference voltage; n-p-n transistor 312, the base of which is fed the output signal of the operational amplifier 311, and the emitter is connected to the inverting input of the operational amplifier 311 and resistor 31A; p-n-p transistor 313, the collector of which is connected to the collector of n-p-n transistor 312, and a resistor 31 and a single output which is connected to the emitter of n-p-n transistor 312, and the other lead grounded. Derived from p-n-p transistors 315 current I00through the p-n-p transistors 316 flows in the resistor 31A, so that the generated reference voltage V0that does not depend on temperature Tandthe environment, that is, the voltage Vbcon the basis of p-n-p transistor 313 helps to maintain a stable current I0that does not depend on temperature Tandenvironment.

Source 31 voltage constant value connected with the regular/random access memory device 16, shown in Fig.1, so as to adjust a few settings temperature compensation. For example, to cover changes in 5-bit signal Ti, setting the temperature of the inflection point, the input of the DC/operativnoy common base which is base voltage Vbcfive p-n-p transistors 316 for applying current in the feedback circuit to the emitter n-p-n transistor 312 and five switching n-p-n transistors 317, each of which is closed or opened in accordance with each bit 5-bit signal Ti.

In Fig. 5 shows another circuit configuration 32 of the forming zone of the reference voltage and circuit 33 current mirror depicted in Fig.3. As shown in Fig. 5, the circuit 32 comprises a pair of p-n-p transistors 321 and 322 are connected to each other by their bases; four n-p-n transistor 323, 324, 325 and 326 connected in parallel with the collector and the base of p-n-p transistor 321 and connected to each other by their bases; n-p-n transistor 328 having a common base with n-p-n transistors 323, 324, 325 and 326 and connected to the collector of p-n-p transistor 322 through resistor 327, and a resistor 329 which is connected one end with the common emitter of the four n-p-n transistors 323, 324, 325 and 326 and grounded the other end. Voltage basebta pair of p-n-p transistors 321 and 322 is the voltage used for current transfer, increasing linearly with the temperature Tandenvironment.

In addition, scheme 33 current mirror of Fig.5 is connected with a constant/random access memory device 16, shown in Fig the signal b1corresponding permanent member of the first control voltage y1or 4-bit signal b5corresponding permanent member of the fifth control voltage y5served from a constant/random access memory 16, scheme 33 current mirror includes four p-n-p transistor 331, a common database which serves a base voltage Vbcfrom source 31 voltage constant value, four p-n-p transistor 332 for transmission current I0a constant and four switching n-p-n transistor 333, included respectively parallel to the four p-n-p transistors 332 and a lockable/unlockable in accordance with 4-bit signal1or b5. In addition, scheme 33 current mirror includes four p-n-p transistor 334, on a common base which is base voltage Vbtdepending on temperature, from the circuit 32 of the forming zone of the reference voltage; eight n-p-n transistors 335, forming four circuits of the current mirror and enabled respectively parallel to the four p-n-p transistor 334 to absorb the current through the mirror inversion, and four switching n-p-n transistor 336, connected in parallel with four groups of n-p-n transistors 3 is portionality first control voltage y1or in accordance with 4-bit signal a5that matches the aspect ratio of the fifth control voltage y5. When in a group of four commuting n-p-n transistors 333 the number of transistors that are in an enabled state changes in accordance with 4-bit signal b1or b5constant current I0increases/decreases, and when in a group of four commuting n-p-n transistors 336 the number of transistors that are in an enabled state changes in accordance with 4-bit signal a1or a5increases/decreases the current Ittemperature-dependent. In the result of increases/decreases the output current I0-Itused to determine the first control voltage y1or the fifth control voltage y5.

In Fig.6 shows a detailed circuit configuration 40 forming a monotonically increasing voltage, which contains the source 12 voltage constant and the circuit 13 of the temperature sensor shown in Fig.1, and is intended for forming and feeding the output of the third control voltage u3increasing according to the increase is atragene contains the source 41 voltage constant value, scheme 42 forming zone of the reference voltage and circuit 43 current mirror is used as the circuit temperature sensor. The reference voltage V0approximately equal to 1.25 V and does not depend on temperature Tandthe environment is produced in the circuit 42 of the forming zone of the reference voltage and constant current I0created on the basis of the reference voltage V0in the source 41 voltage constant value.

Similarly, the current Ithendepending on temperature Tandthe environment is created in the circuit 42 of the forming zone of the reference voltage and the current Itproportional to the temperature Tandthe environment is created in the schema 43 current mirror so that the current It-I0the difference between the current Itproportional to the temperature Tandthe environment, and the constant current I0can be taken at the node between the source 41 voltage of constant magnitude and circuit 43 current mirrors. Differential current IT-I0we are transforming the current/voltage using a resistor 44, whereby is formed a third control voltage u3proportional to the temperature Tandenvironment. When this is through frequency when the temperature of the inflection point, when room temperature is set by adjusting the resistance of the resistor 41A in the source 41 voltage constant value.

In Fig. 7 shows a detailed diagram of the source 41 voltage constant value. In Fig.7 to denote elements similar to those shown in Fig. 4, uses the same items and their description is omitted. In this case, it goes without saying that the source 41 voltage constant value is circuit parameters other than the parameters of the source schema 31 voltage constant value.

In Fig. 8 shows a detailed circuit configuration 42 of the forming zone of the reference voltage and circuit 43 current mirrors. The circuit 42 of Fig.8 has the same configuration as the circuit 32 in Fig.5, and therefore its description is omitted and the same rank used to denote elements similar to those shown in Fig.5. In Fig.8 scheme 43 current mirror is connected with a constant/random access memory device 16 (Fig.1) in order to adjust the temperature compensation. For example, to cover changes in 4-bit signal and3corresponding to the aspect ratio of the third control voltage u3supplied from the settlement of the 1, on a common base from which circuit 42 forming the reference voltage, the base voltage Vbttemperature-dependent, four p-n-p transistor 432 to send the current Itproportional to the temperature Tandthe environment, and four switching n-p-n transistor 433, which are connected respectively in parallel to the four p-n-p transistors 432 and closed/opened in accordance with 4-bit signal and3. In addition, the circuit 43, the current mirror includes four p-n-p transistor 434, on a common base which is base voltage Vbcfrom a source 41 of the voltage constant, eight n-p-n transistors 435, forming four circuits of the current mirror, included respectively in parallel with four p-n-p transistor 434 to absorb the current through the mirror inversion, and four switching n-p-n transistor 436, included respectively in parallel with the four groups of the n-p-n transistors 435 and closed/opened in accordance with 4-bit signal3. When the number of transistors in the on state among the four switching n-p-n transistors 433 and the number of transistors in the on state among the four switching n-p-n transistors 436, ismeretek control voltage3increases or decreases.

In Fig. 9 shows part of the circuit for forming the voltage constant value that contains the source 12 voltage constant value and figure 13 temperature sensor (Fig.1) to generate and feed the output of the second control voltage u2and the fourth control voltage u4that does not depend on the ambient temperature. This scheme of formation voltage constant value contains the source voltage constant (not shown) and circuit 42A forming zone of the reference voltage, and circuit 43A of the current mirror, which serves as a temperature sensor. The voltage source constant value has the configuration similar to the source 41 voltage constant value in Fig.7. Circuit 42A forming zone of the reference voltage in Fig. 9 has the same configuration as the circuit 42 forming the reference voltage in Fig.8, so its description is omitted and the same item numbers are used to denote elements similar to those shown in Fig.8.

Similarly, the circuit of the current mirror 43A, shown in Fig.9, is connected with the constant/random access memory device 16 (Fig.1), to the treatment tip can sootvetstvuyuschego permanent member of the fourth control voltage u4supplied from a constant/random access memory 16, the circuit 43A current mirror includes four p-n-p transistor 431, on a common base which is base voltage Vbcfrom the constant voltage source, four p-n-p transistor 432 to send the current I0a constant and four switching n-p-n transistor 433, respectively connected in parallel to p-n-p transistors 432 and closed/opened in accordance with 4-bit signal 4.

In addition, the circuit 43A current mirror includes four p-n-p transistor 434, on a common base which is base voltage Vbcfrom the constant voltage source, eight n-p-n transistors 435, forming four circuits of the current mirror included respectively parallel to the four p-n-p transistor 434 to absorb the current through the mirror inversion, and four switching n-p-n transistor 436, included respectively parallel to the four groups of the n-p-n transistors 435 and closed/opened in accordance with 4-bit signal 2. When the number of transistors in the on state among the four switching n-p-n transistor 433 is changed in accordance with 4-bit signal b4uvelichenie is Nestorov in the on state among the four switching n-p-n transistor 436 is changed in accordance with 4-bit signal b2current employee to determine the second control voltage u2increases/decreases.

Below diagram 14 control for this form of the invention will be described with reference to the attached drawings.

In Fig.10 shows a detailed circuit configuration 14 of the control shown in Fig.1. As shown in Fig.10, the circuit 14 controls designed to provide a control voltage Vcused for temperature compensation of the crystal oscillator 15, a voltage-controlled contains the schema 14a highlight the maximum value for receiving the first control voltage y1the second control voltage u2and the third control voltage u3generated by the source 12 voltage constant value and figure 13 temperature sensor shown in Fig.1, and for filing a maximum output of these control voltages as the sixth control voltage u6and circuit 14b allocation minimum value for receiving the fourth control voltage u4and the fifth control voltage y5generated by the source 12 voltage constant value and figure 13 sensor temperaturee maximum value, and to supply the minimum output of these control voltages as the seventh control voltage u7. The seventh control voltage u7is used as the control voltage Vcfor temperature compensation.

Scheme 14a highlight the maximum value contains the first n-p-n transistor Q1, the collector of which is supplied the voltage Vcca power base is served first control voltage y1and the emitter is connected to the input of the first source current I1a constant value; a second n-p-n transistor Q2, the collector of which is supplied the voltage Vccpower to the base control voltage u2and the emitter is connected to the input of the first source current I1; a third n-p-n transistor Q3, the collector of which is supplied the voltage Vcca power base is served third control voltage u3and the emitter is connected to the c input of the first source current I1and the fourth n-p-n transistor Q7, the collector and base of which is connected to the output of the second source of current I2constant value intended for applying current two times smaller magnitude than the first source current I1the emitter of the fourth n-p-n-transistor control voltage u6the maximum voltage selected from the first control voltage y1the second control voltage u2and the third control voltage u3.

The allocation of the minimum value 14b contains the first p-n-p transistor Q6, the base of which is connected to the collector of the fourth n-p-n transistor Q7, the emitter is connected to an output of the third current source I3constant value, and the collector is grounded; a second p-n-p transistor Q4, the base of which a fourth control voltage u4the emitter is connected to the output of the third source of current I3and the collector is grounded; a third p-n-p transistor Q5, the base of which a fifth control voltage y5the emitter is connected to the output of the third source of current I3and the collector is grounded; and

the fourth p-n-p transistor Q8, the emitter of which is connected to the output of the third source of current I3the collector and base connected to the input of the fourth current source I4constant value intended for applying current to two times lower than that of the third source I3and from the manifold to the exit as the seventh control voltage u7receives minimum voltage, vibraimage voltage y6.

Scheme 14a selection of the maximum value and the scheme 14b allocation minimum values having the above configuration are as follows.

In the allocation of the maximum value 14a of the first n-p-n transistor Q1, the second n-p-n transistor Q2 and the third n-p-n transistor Q3 have a common collector and emitter, the current from the second current source I2flows through the fourth n-p-n transistor Q7 to the first source of current I1and the amount of current I2is set to I1/2. Consequently, the current I1/2, the remaining current I1flows in the transistor from among the first n-p-n transistor Q1, a second n-p-n transistor Q2 and the third n-p-n transistor Q3, the base of which is filed with the largest voltage. As a result, the potential difference between the base and emitter of the fourth n-p-n transistor Q7 is equal to the potential difference between the base and emitter of the transistor from among the first n-p-n transistor Q1, a second n-p-n transistor Q2 and the third n-p-n transistor Q3, which filed the largest voltage. Accordingly, the voltage common to the collector and base of the fourth n-p-n transistor Q7, equal to the maximum voltage selected from the first control voltage y1second prinimaemogo the values of the first p-n-p transistor Q6, the second p-n-p transistor Q4 and the third p-n-p transistor Q5 also have a common emitter, and all the collectors of these transistors are grounded. Consequently, the voltage common to the collector and base of the fourth p-n-p transistor Q8, equal to the minimum voltage among voltages applied to the first p-n-p transistor Q6, the second p-n-p transistor Q4 and the third p-n-p transistor Q5.

Thus, using the scheme 14 control in this form of the invention to form a seventh control voltage u7that corresponds to the control voltage Vcserving for temperature compensation of the crystal oscillator 15, a voltage-controlled piecewise linear approximation for the characteristic temperature compensation can be performed by forming groups of five continuously and linearly varying control voltages using a few simple circuits using bipolar transistors.

In addition, since the source 12 voltage constant value, the circuit 13 temperature sensor and circuit 14 controls that work together as a functional Converter that generates the control voltage Vcfor temperature compensation, contain is but the appearance of spike frequency in the area of connection between the line segments of straight lines, forming a polygonal line. In addition, because there is no need to use functional Converter clock generator, interference from the clock synchronization can be avoided.

Although in Fig.10 output circuit 14a highlight the maximum value accepted by the scheme 14b highlight the minimum value on the scheme 14a allocation maximum values and circuit 14b highlight the minimum value can be changed to reverse. Namely, in this case, the third control voltage u3the fourth control voltage u4and the fifth control voltage y5an input circuit 14b highlight the minimum value, the output of which is used as the sixth control voltage u6. The sixth control voltage u6the first control voltage y1and the second control voltage u2an input circuit 14a selection of the maximum value, the output of which is used as a seventh control voltage u7that is , as the output signal of the circuit 14 of the control.

Next, using graphs and formulas will be described the control voltage Vwithused for temperature is emnd 14 management which is shown in Fig.1 and work together as a functional Converter.

In Fig. 11(a)-11(C) shows the compensation of the frequency f of oscillation of the crystal oscillator 15, a voltage-controlled using a temperature compensating control voltage Vwith, and Fig.11(a) shows the dependence on temperature Tandenvironment frequency f of the oscillations produced by the crystal oscillator 15, a voltage controlled, without temperature compensation, and f0denotes nominal frequency determined by the technical requirements, for example, to a portable radiotelephone. In Fig.11(b) shows the dependence on temperature Tandenvironmental control voltage Vwith(that is, the seventh control voltage u7) used for temperature compensation and supplied to its output circuit 14 of the control, and Fig.11(C) shows the temperature dependence of the difference f between the frequency f of oscillation of the crystal oscillator 15 is controlled by a voltage, and rated frequency f0when the application of the control voltage Vwithto a quartz oscillator 15 is controlled by the voltage.

In Fig. 12 in more detail shows a graph of Fig.11(b) and represented groups in the first temperature range (T0Tand<T), the second control voltage u2in the second temperature range (T1Tand<T), the third control voltage u3in the third temperature range (T2Tand<T), the fourth control voltage u4in the fourth temperature range (T3Tand<Tand the fifth control voltage y5in the fifth temperature range (T4TandT5). In Fig.12 on the X axis is temperature Tandthe environment, on the Y - axis control voltage Vwith. The temperature corresponding to the center of the graph of the control voltage Vwithdesignated as Tia difference voltage from the voltage required to achieve the nominal frequency at temperature T1labeled as .

Below are the formulas for linear functions y1-y5:

y1=-a1(Tand-T1)-b1+ (1)

(where T0Tand<T, a1>0 and b1>0);

y2=-b2+ (2)

(where T1Tand<Tand b2>0);

y3=and3(Tand-Ti)+ (3)

(where T2Tand<Tand a3>0);

y4=b4+ (4)

(gde T4TandT5, a5>0, b5>0,

When the Central temperature Ticorresponds to the temperature of the inflection point of the characteristic of the crystal oscillator; it is approximately 25oFor conventional crystal oscillator.

Now consider the dependence between the sixth managing stress6and the first, second and third control voltages y1,2and I3and the dependence between the seventh controlling voltage 7i.e. controlling voltage Vwithand fourth, fifth and sixth control voltage u4, y5and I6using the scheme 14b allocation maximum values and circuit 14b highlight the minimum value shown in Fig.10.

If the schema 14a allocation maximum values of the emitter currents of the first n-p-n transistor Q1, a second n-p-n transistor Q2, the third n-p-n transistor Q3 and the fourth n-p-n transistor Q7 to designate as the IEQ1, IEQ2, IEQ4and IEQ7accordingly, we have the following dependency:

IEQ1+IEQ2+IEQ4=IEQ7=l1/2=I2. (6)

Similarly, the emitter currents of the respective n-p-n transistors are/SUB>-V1)}; (8)

IEQ3=ISNexp{(q/kT)(y3-V1)}; (9)

IEQ7=ISNexp{(q/kT)(y6-V1)}, (10)

where Isnindicates the reverse saturation current n-p-n transistor; q is the electron charge; k - Boltzmann constant; T - absolute temperature; V1the potential of the common emitter n-p-n transistor.

Accordingly, if the formula (7) (10) to substitute in the formula (6) and the resulting expression to decide on the6it can be obtained the following formula representing the relationship between the sixth managing stress6and the first, second and third control voltages y1, y2and I3:

y6=(kT/q)ln{exp(qy1/kT)+exp(qy2/kT)+exp(qy3/kT)}. (11)

Similarly, the allocation of the minimum value 14b, the emitter currents of the first p-n-p transistor Q6, the second p-n-p transistor Q4, the third p-n-p transistor Q5 and the fourth p-n-p transistor Q8 will denote by IEQ6, IEQ4IEQ5and IEQ8, respectively. We have the following dependency:

IEQ6+IEQ4+IEQ5=IEQ8=I3/2=I4. (12)

In addition, the emitter currents of the respective p-n-p transistors are represented as follows:

IEQ6=iSPexp{(q/kT)2-y5)}; (15)

IEQ8=iSPexp{(q/kT)(V2-y7)}, (16)

where ISPreverse saturation current of the p-n-p transistor; q is the electron charge; k - Boltzmann's constant; T - absolute temperature; V2the potential of the common emitter p-n-p transistor.

Accordingly, if the formula (13) (16) to substitute in the expression (12) and the resulting formula to solve relatively7can be obtained from formula (17) representing the relationship between the seventh managing stress7and fourth, fifth and sixth control voltage u4, y5and y6:

y7=(-kT/q)(ln{exp(-qy6/kT)+exp(-qy4/kT)+exp(-qy5/kT)}. (17)

Then by substitution in the formula (17) sixth control voltage u6represented by the formula (11), the required formula (18) can be obtained as follows:

y7=(-kT/q)(ln[1/exp(qy1/kT)+exp(qy2/kT)+exp(qy3/kT)+exp(-qy4/kT)+exp(-qy5/kT)]. (18)

Further, as an example will be described the configuration of the DC/RAM 16 shown in Fig.1, for this form of embodiment of the invention.

In Fig. 13 shows the configuration constant/random access memory device 16 used in Blane. As shown in Fig.13, although this is only one of the possible examples, constant/random access memory 16 contains as a unit input serial data circuit 161 data entry, performed on the memory device and containing four series-connected trigger circuit 162 programmable random-access memory containing four programmable permanent storage devices (PROM1-PROM4), each of which receives and stores a bit of the output circuit 161 of the input data on the memory device, and circuit 163 switching receiving external signal SEL to select or output circuit 161 of the input data on the memory device, or the output circuit 162 programmable permanent memory device. In this case, the output constant/random access memory device 16 serves, for example, in scheme 33, the current mirror shown in Fig.5, as a 4-bit signal1or similar signal. Although shown as an example diagram of a constant/random access memory device 16 has a configuration that enables the processing of 4-bit data, sabreen below.

The work of the standing/RAM 16 will now be described with reference to the timing diagrams of input data in random access memory device shown in Fig.14.

First to record the necessary data in the schema 162 programmable permanent memory device, a signal is generated With a/E, which matches the signal circuit 161 of the input data on the memory device to allow data input, and the signal read/write W/R for the circuit 162 programmable permanent storage device installed in the recording mode. Serial data, for example 1, 0.1 and 1, serial input from input data DAA schema 161 input on the leading edge of the clock CLK. As a result, as shown in Fig.14, the first element "1" of the output data is transmitted to the output OUT1 of the first trigger, the second element "0" of the output data is displayed on the output OUT2 of the second trigger, the third element of the "1" output appears on the output OUT3 of the third trigger, and the fourth element "1" output appears on the output OUT4 of the fourth trigger. Then in the schema 162 programmable permanent memory device (Fig.13) the first element of the output of the recordings which were introduced in the scheme 161 input data on the memory device, signal SEL of the selection scheme 163 switching is set at a level that ensures end-to-end transmission of data. In order to read data stored in the schema 162 programmable permanent memory device, the signal SEL of the selection scheme 163 switching is set to the selection level data from the programmable permanent storage device.

The first modification of the first form of embodiment of the invention

Below the first modification of the first form of embodiment of the invention will be described with reference to the attached drawings.

In Fig.15 shows the circuit configuration of the control unit of the crystal oscillator according to the first modification. In Fig.15 are the same as those positions to denote elements similar to those used in the control circuit shown in Fig.10; the description of these elements is omitted. The circuit 14 of the control shown in Fig.15, contains the schema 14C allocation maximum value for receiving the first control voltage y1the second control voltage u2and the third control voltage uz generated by the source 12 voltage constant value and figure 13 temperature sensor (Fig.1), and for filing a maximum output of these upravleniya for receiving the fourth control voltage u4and the fifth control voltage y5generated by the source 12 voltage constant value and figure 13 temperature sensor (Fig.1), and the sixth control voltage u6from the diagram 14C allocation maximum value and to supply the minimum output of these control voltages as the seventh control voltage u7.

In the scheme of 14C allocation maximum value of the first resistor R1 is connected in series between the emitter of the first n-p-n transistor Q1 and the first source of current I1a constant value, a second resistor R2 connected in series between the emitter of the second n-p-n transistor Q2 and the first source of current I1a constant value, a third resistor R3 connected in series between the emitter of the third n-p-n transistor Q3 and the first source of current I1constant value and the fourth resistor R7 connected in series between the emitter of the fourth n-p-n transistor Q7 and the first source of current I1constant values.

Similarly, in the circuit 14d highlight the minimum value of the fifth resistor R6 connected in series between the emitter of the first p-n-p transistor Q6 and a third source of current I3a constant value, the sixth 3 a constant value, the seventh resistor R5 connected in series between the emitter of the third p-n-p transistor Q5 and a third source of current I3constant value and the eighth resistor R8 is connected in series between the emitter of the fourth p-n-p transistor Q8 and a third source of current I3constant values.

Because of this modification in series with the emitters of the n-p-n transistors Q1, Q2, Q3 and Q7 in the circuit 14C allocation maximum values are included resistors and the resistors are also connected in series with the emitter p-n-p transistors Q6, Q4, Q5 and Q8 in the circuit 14d allocation minimum value, lots of connections between the respective fields of temperature in the control voltage Vwithshown on Fig.12, can be smoothed. In General, when approximating a cubic function using the polyline approximation error f, which corresponds to the difference f-f0between the frequency f of the oscillations after the implementation of temperature compensation and the nominal frequency f0the crystal oscillator is greatest in those parts, where the segments, forming a broken line, are connected. However, if lots of connections between areas of smoothed temperature, the approximation error can the th on the attached drawings will be described in the second modification of the first form of embodiment of the invention.

In Fig.16(a)-16(C) shows the temperature dependence of the oscillation frequency provided when using the control circuit unit of the crystal oscillator according to the second modification, while Fig.16(a) shows the temperature dependence of the oscillation frequency to the implementation of temperature compensation. In Fig.16(b) shows the temperature dependence of the control voltage Vwithused for temperature compensation of the crystal oscillator, voltage-controlled and generated by the control circuit in this modification, and Fig.16(C) shows the temperature dependence of the difference f between the frequency f of the oscillations after temperature compensation using the control voltage Vwithand the nominal frequency f0.

This modification is characterized by the fact that the curves of control voltages, which must be connected at the boundaries between areas of temperature, smoothly connected analog way through the gradual conversion of the line of control voltages in accordance with the temperature change. Therefore, the generated control voltage can be accurately approximated by a cubic function, which leads to the reduction of the difference frequency f UB>Tand<T, T1Tand<Tand T2TandT3and are used only straight lines y11, y12and y13three control voltages, as shown in Fig.17, can be achieved the same effect, which is provided by approximation using five straight lines y1-y5by performing the connecting parts of the smoothed analog fashion.

When the adjustment temperature compensation, the decrease in the number of straight lines used for piecewise linear approximation, can be an important factor for reducing the required capacity constant/random access memory device, as will be described below.

The third modification of the first form of embodiment of the invention

Below will be described a third modification of the first form of embodiment of the invention.

Temperature characteristic of the frequency f of oscillation of the crystal oscillator from a lower temperature from the higher temperature is symmetric about the point Tiinflection, as shown in Fig.11(a), and in this modification the symmetry is used to form groups of control voltage Vwiththat is UB>iinflection.

In particular, in the above formulas (1) to(5), representing the first to fifth control voltage y1-y5the proportionality coefficient a1in (1) is equal to the proportionality coefficient a5in (5), the constant b1in (1) equal to a constant b5in (5) and the constant b2in (2) equal to a constant b4in (4).

Thus, continuous one parameter of the internal schema element 14 control, which determines the temperature characteristic from a lower temperature or a higher temperature, can be calculated using a predetermined correlation of this parameter with a constant parameter of the other of the inner element and, consequently, the capacity of the DC/RAM 16 can be substantially reduced.

Thus the control voltage Vwithfor temperature compensation of the crystal oscillator can be represented by the following cubic function:

Vc= (T-Ti)3+(T-Ti)+, (19)

where is the negative coefficient of the cubic component of the temperature characteristics; - the coefficient of linear component temperature the nominal frequency when the temperature of the inflection point; T is the absolute temperature; i- the temperature of the inflection point corresponding to the inflection point of the cubic function.

In Fig. 18 shows a table in which the capacitance constant/random access memory required for various construction management schemes. In the case when the parameters used to adjust the temperature compensation control voltage is limited by the cubic temperature characteristic, for independent adjustment of the parameters of the first to fifth control voltages1-y5parameter (temperature compensation) and the stability of the frequency f of the oscillation 2,510-6in the required temperature range of each of the coefficients of proportionality of a1and3and a5requires 4 bits, each of the constant b1and b5requires 4 bits and each of the constant b2and b4requires 2 bits (see the above-mentioned formulas (1) to(5)). In the required d / a Converter 24 bits in total.

However, when the control voltage from a lower temperature from the higher temperature symmetrically, as in this modification, the bits for the adjustment of the constants aTate, adjustment of temperature compensation can be performed by using a digital to analogue Converter 14 bits in total.

The fourth modification of the first form of embodiment of the invention

Below with reference to the attached drawings will be described in the fourth modification of the first form of embodiment of the invention.

In Fig.19(a)-19(b) shows the temperature dependence of the control voltage produced by the control circuit unit of the crystal oscillator according to the fourth modification of the first form of the invention, while Fig.19(a) shows the cubic curves f1f2and f3obtained by the different coefficients of the cubic component of the dependence of the oscillation frequency of the quartz oscillator temperature, and Fig.19(b) shows the control voltage VC1VC2and VC3to compensate for the corresponding cubic curves.

In this modification, the temperature coefficients (the coefficients of proportionality) temperature characteristics of the group of control voltages, the first to fifth control voltage y1-y5and changing a broken line in accordance with the temperature, have Zadunaisky parameters of the circuit 14 of the control, option one internal element can be calculated using the specified ratio with the option of another element. As a result, the capacity of the DC/RAM 16 can be significantly reduced.

Below presents the relationship between the temperature coefficient of the cubic component and control voltages y1-y5optimal from the point of view of reducing approximation errors. If we assume that the control voltage having an individual value for each oscillator must be perfect controlling voltage Vcithe formula (19) is converted into the following expression:

Vci= (T-Ti)3+(T-Ti)+. (20)

When the half-width of the operating temperature range of the unit crystal oscillator equal to T0the ideal control voltage Vcican be divided into a linear function of Vcilrepresented by the formula (25), and a cubic function Vci3represented by the formula (26), both of these functions pass through three points, which represent the following formulas (21)-(23), and a cubic function of Vci3subject piecewise linear is
, ]; (22)

[T, Vci]=[(T1+T0), Vci(T1+T0)]; (23)

Vci=Vci1+Vci3; (24)

Vci1= (+T20)(T-T1)+; (25)

Vci3= (T-Ti)3-T20(T-Ti). (26)

The linear function Vci1and cubic function Vci3it is shown in Fig.20(a)-20(C). In Fig.20(a) line 1 shows a linear function of Vci1and curve 2 shows a cubic function Vci3, Fig. 20 (b) shows a linear function of Vci1, and Fig.20 (C) shows the piecewise linear approximation of a cubic function Vci3(curve 2) using groups of lines y1-y5corresponding to the five managing stress in this form of the invention.

In this case, the error of piecewise linear approximation is minimized in each interval under the following conditions. In the first temperature range (Ti-T0T<T-0,755 T0she is minimized when the first control voltage y1is:

y1= -1,46 T20(T-Ti)-1,46 T30(27)

=-a1(T-Ti)-b1. (28)

In the second temperature range (Ti-0,755 T0T<T-0,398 T0she is minimized when Wallem temperature range (Ti-0,398 T0T<T+0,398 T0she is minimized when the third control voltage uz is:

y3= 0,9 T20(T-Ti) (31)

=and3(T-T1). (32)

In the fourth temperature range (Ti+0,398 T0T<T+0,755 T0she is minimized when the fourth control voltage u4is:

y4= 0,358 T30(33)

=b4. (34)

In the fifth temperature range (Ti+0,755 T0TT1+T0she is minimized, when the fifth control voltage y5is:

y5= -1,46 T20(T-Ti)+1,46 T30(35)

=-a5(T-Ti)+b5. (36)

In Fig.21 (a) shows the cubic function Vci3(26), the first control voltage y1(27), the second control voltage u2(29), the third control voltage uz (31), the fourth control voltage u4(33) and the fifth control voltage y5(35). In Fig.21 (b) shows the dierence Vcbetween the ideal controlling voltage Vci3shown on Fig.21(a), and approximating controlling voltage Vcpobtained by piecewise linear approximation using control SUB> we group in the left part, and the coefficients of the ideal control voltage Vciin the right part. If we compare the coefficients of the formulas (27) and (28) and the coefficients of the formulas (35) and (36), we get the following:

a1= a5= 1,46 T20; (37)

b1= b5= 1,46 T30. (38)

If we compare the coefficients of the formulas (31) and (32), we get the following:

3= 0,9 T20. (39)

If we compare the coefficients of the formulas (29) and (30) and the coefficients of the formulas (33) and (34)), we get the following:

b2= b4= 0,358 T30. (40)

By converting the formulas (37)-(40) can be obtained expressions representing the necessary relation between the temperature coefficient of the cubic component and the parameters of the lines used in the piecewise-linear approximation:

a1/ = 1,46 T20; (41)

a3/ = 0,9 T20; (42)

a5/ = 1,46 T20; (43)

b1/ = 1,46 T30; (44)

b2/ = 0,358 T30; (45)

b4/ = 0,358 T30; (46)

b5/ = 1,46 T30. (47)

In this case, if the temperature at the inflection point is equal to 25oWith the width of Taboutthe operating temperature range is 60

Thus, even when each quartz oscillator has its own coefficient of the cubic component of the ideal control voltageci, aspect ratio (a1/,3/,a5/,b1/,b2/,b4/ and b5/ do not change.

Therefore, in this modification, the coefficients of proportionality1and3and a5for lines and constant parameters b1b2b4and b5lines are determined by the relations (41)-(47). Thus, when the adjustment of the temperature coefficient of the cubic component characteristics of the crystal oscillator, fixed circuit parameters corresponding to the coefficients of proportionality of a1and3and a5and constant circuit parameters corresponding constant b1b2b4and b5can be installed through group operations, and hence, the adjustment can be performed digital-to-analog Converter with a width equal to the sum of 6 bits, as shown in the table in Fig. 18. Therefore, even when the capacity of the DC/RAM 16 is small, random deviations of the coefficient of the cubic component of the temperature characteristics is avago resonator, as a random deviation of the absolute values of the oscillation frequency can be accurately adjusted.

The second form of embodiment of the invention

Below with reference to the attached drawings will be described a second form of embodiment of the invention.

In Fig. 22 shows a block functional diagram of the Converter used for the temperature compensation unit of the crystal oscillator with temperature compensation according to the second form of embodiment of the invention. As shown in Fig. 22, the functional Converter comprises a circuit 14A allocation maximum/minimum values, which has the same configuration as the circuit 14 of the control in the first form of the invention, and is for receiving the output signals from the source 12 voltage constant magnitude and circuit 13 temperature sensor and for the formation of the cubic control voltage Vccorresponding to within a predetermined temperature range parameter of the cubic component of the control voltage Vcdesigned for temperature compensation and is represented by the formula (19); scheme 17 the formation of linear temperature characteristics for receiving the output sausage within a specified temperature range parameter linear component of the control voltage Vc(19); scheme 18 forming temperature characteristics zero-order to receive the output signal of source 12 voltage constant and to provide a control voltage of zero order Vccorresponding to within a predetermined temperature range parameter at zero order in the control voltage Vc(19), i.e. does not depend on temperature within a specified temperature; and figure 19 adjusting the values of Tifor receiving the output signal of the circuit 13 temperature sensor, adjust the values of temperature Tithe inflection point (see formula (19)), and the filing of adjusted values for the circuit 14A allocation maximum/minimum values and scheme 17 the formation of linear temperature characteristics.

In this form of the invention in functional Converter that generates the control voltage Vcfor temperature compensation of the crystal oscillator, voltage controlled, this control voltage Vcis formed by summation of the output voltage Vc of the circuit 14A allocation maximum/minimum values, which performs a piecewise linear approximation using Lin five parts; the output voltage Vcscheme 17 the formation of linear temperature characteristics, which is used to adjust the linear characteristics parameter temperature compensation and output voltage Vcscheme 18 forming temperature characteristics zero order, which is used to adjust the characteristics of the zero-order parameter, temperature compensation, i.e. does not depend on temperature Tandenvironmental deflection control voltage from the voltage required to achieve the nominal frequency when the temperature of the inflection point. Thus, temperature compensation of the oscillation frequency of the crystal oscillator can be accurately performed in the whole range of temperatures Tandenvironment.

Fig. 23(a)-23(d) are graphs illustrating the change of the control voltage Vcby adjusting the parameters , and temperature compensation and temperature Tithe inflection point. In Fig.23(a) shows the change that occurs with the change of parameter / cubic component of the temperature characteristics of Fig. 23(b) shows the change that occurs with the change of the parameter of the linear part of the temperature characteristically voltage from the voltage required to achieve the nominal frequency when the temperature of the inflection point, and Fig. 23(d) shows the change that occurs with the change of temperature Tithe inflection point.

As shown in Fig. 23(a) when you change the setting temperature characteristics, the absolute values of the minimum and maximum are reduced, and as shown in Fig. 23(b) when you change the setting temperature characteristic, the temperature characteristic is rotated around the point Ti(i.e., inflection points). Also, as shown in Fig.23(C) when you change the parameter zero-order temperature characteristics, moves the point of intersection of the axis Y. in Addition, as shown in Fig.23(d) when does the temperature Tithe inflection point, the graph characteristics is shifted along the x axis.

The third form of the invention

Below with reference to the attached drawings will be described a third form of embodiment of the invention.

Fig.24 is a functional block diagram for explaining the adjustment of the oscillation frequency in the unit crystal oscillator with temperature compensation according to a third form of embodiment of the invention. In Fig.24 to denote elements similar Potocnik 12 voltage constant value, scheme 13 temperature sensor circuit 14 of the control crystal oscillator 15, a voltage controlled and constant/random access memory used as optimization tools, have a configuration equivalent to the configuration of the first form of embodiment of the invention. In addition, as shown in Fig.24, block 10A of the crystal oscillator with temperature compensation in this form of exercise includes a switch SW1 for connecting/disconnecting circuit 14 of the control to a quartz oscillator 15 is controlled by the voltage.

Generally speaking, any quartz resonator, which is part of the crystal oscillator 15, voltage-controlled, has a random angle deviation at-cut, the frequency deviation from the nominal frequency when the temperature of the inflection point and the temperature Tithe inflection point. Therefore, the oscillation frequency of the crystal oscillator 15, a voltage-controlled before sending it to the consumer must be adjusted with precision 2,510-6.

In this form of the invention, the block of the crystal oscillator is between the circuit 14 controls and a quartz oscillator 15, a voltage controlled switch SW1. Therefore, the unit of the crystal oscillator is permanent storage device as follows. When using random access memory input from outside data containing the parameters of the compensation temperature, are introduced into the scheme 161 input data on the memory device in the constant/random access memory device 16 via the input "DAA" for external data and the control voltage Vcadjusted using data from the schema 161 input data to determine the optimal characteristic voltage. When using a persistent storage device, the data selected in the mode of using the random access memory, is written to the block random-access memory circuit 16 and the data is then read into the actual operational conditions to output the control voltage Vcin accordance with the temperature Tandenvironment.

The method of adjusting the oscillation frequency of the block 10A of the crystal oscillator with temperature compensation having the above configuration will be described below with reference to the attached drawings.

In Fig. 25 shows a block diagram of the algorithm of the method of the adjustment unit of the crystal oscillator in accordance with this form of implementation of izaberete is ment for a specific crystal oscillator), the switch SW1 in Fig.24 is opened, one input circuit 51 phase-locked loop is connected with the output of the toutoscillator 15 is controlled by a voltage, and frequency fothat does not depend on the ambient temperature, is fed to another input circuit 51 phase-locked loop. External control voltage Vcextadjusted so that the frequency f of the oscillations at the output of foutwas equal to a given frequency f0. Then, after the unit 10A of the crystal oscillator, which must be adjusted, is placed in thermostat, external control voltage Vcextis measured while changing the ambient temperature from low temperature to high. Thus the individual control voltage Vc0then there is an ideal control voltage, which is caused by the temperature change of the frequency f of oscillation of a particular oscillator 15, the controlled voltage is zero.

Then, in step (ST2) of the definition of individual parameters, based on the temperature characteristics of the individual control voltage Vc0calculated parameters of the control signal corresponding to the coefficient of cubic soatlarini frequency from the nominal frequency when the temperature of the inflection point and the temperature of the inflection point, these individual parameters are defined as 0,0,0and Ti0respectively.

Next, in step (ST3) measurement characteristics of the source of control voltage, the switch SW2 is opened, the switch SW1 is closed and the unit is installed in the mode of using the random access memory device. Next, the measured temperature characteristic of the source of control voltage Vc1circuit 14 controls, and measured the change in the temperature characteristics of the source of control voltage Vc1when you change data corresponding to the parameters entered in the random access memory.

Then in step (ST4) of the definition of initial parameters on the basis of the temperature characteristics of the source of control voltage Vc1calculated parameters of the source temperature compensation for the voltage Vc1corresponding to the coefficient of the cubic component of the temperature characteristics, the coefficient of linear component of the temperature characteristics, the frequency deviation from the nominal frequency when the temperature of the inflection point and the temperature of the inflection point of the crystal oscillator equal to1,1,ncacii temperature calculated value parameter changes, the corresponding change in one bit of the corresponding parameters, presented in the form of data in random access memory device; these values changes will denote by ,, and Tirespectively.

Then in step (ST6) calculating the difference of individual option and the source parameter are calculated difference between the relevant parameters and0b0, g0Ti0and a1b1, g1Ti1.

Next, in step (ST7) determine the optimal parameters based on ,, and Ticalculated in step ST5, the optimal parameters are determined so that the difference of the parameters calculated in step ST6, could be close to zero.

Then in step (ST8) confirm the characteristics of the oscillation frequency defined in the previous step, the optimal parameters are written in scheme 162 programmable permanent memory device and the unit is installed in a mode of using a permanent storage device. After this crystal oscillator 10A, which must be adjusted, again placed in a thermostat and the measured temperature characteristic of the frequency f of the oscillations, to ensure that the temperature characteristic is less than a predetermined range, the procedure will return to the appropriate step and re-tune.

Thus, according to this form of the invention, adjustment, aimed at the suppression of the temperature dependence of the oscillation frequency in a given range can be exactly implemented taking into account the random deviations of the angle of at-cut quartz resonator, random deviations from the nominal frequency frequency when the temperature of the inflection point and the random deviations of the temperature of the inflection point.

In addition, the operation of step ST1 measuring individual control voltage, step ST2 determine the individual parameters, the step ST3 measurement characteristics of the source of control voltage, step ST4 determine the source parameters step ST5 calculate change settings temperature compensation, step ST6 calculating the difference of the individual parameter and the initial setting of step ST7 determine the optimal parameters and step ST8 confirm the characteristics of the oscillation frequency can be performed automatically using a personal computer or similar equipment. Therefore, by recording the optimal parameters for each quartz gene is the use of constant data storage device, the time required for the entire process of the adjustment unit of the crystal oscillator can be greatly reduced and the accuracy of the adjustment can be greatly improved.

1. Functional Converter comprising first circuit forming the analog signal to generate and supply to the output of the specified analog signal that is essentially independent of ambient temperature; a second circuit forming the analog signal to generate and supply to the analog signal, depending on the ambient temperature; a storage device for storing management data corresponding respectively to the first, second, third, fourth and fifth intervals of temperature, obtained by dividing the range of possible ambient temperature for five continuous parts in the above-mentioned order in the direction from low temperature to high; the third scheme of the formation of the analog signal for a reception signal from the first generation analog signal, receiving the signal from the second generation of the analog signal and receiving management data from the storage device and for forming and feeding the output of the first, second, third, chetverin to receive these control signals from the first to the fifth and forming a control signal as a function of temperature, based on each received signal, for supply to the output, while the storage device stores the following data management the first value of the aspect ratio defines the ratio of the coefficient of proportionality between the temperature used to generate the first control signal, and its output value to the coefficient of the cubic component of the temperature characteristics of the oscillation frequency of the crystal oscillator; a second value of the aspect ratio that determines the ratio of the constant relating temperature used to generate the second control signal, and its output value to a specified coefficient of the cubic component; a third value of the aspect ratio that determines the ratio of the coefficient of proportionality between temperature, used to generate the third control signal, and its output value to a specified coefficient of the cubic component; a fourth value of the aspect ratio that determines the ratio of the constant relating temperature used to generate the fourth control signal, and its output value to a specified coefficient of the cubic component, and a fifth value of the aspect ratio that determines the ratio of Nala, and its output value to a specified coefficient of the cubic component, and when the ambient temperature is in any of the first, second and third temperature ranges specified in the control signal being output from the control circuit contains any of the first, second and third control signals, which are selected by the control circuit, and the other signal is generated by changing the selected signal to obtain a smooth curve in the border region between the temperature range in which the ambient temperature, and the adjacent interval, and when the ambient temperature is in the fourth or fifth temperature range, the control signal being output from the control circuit comprises at least one from among first, second and third control signals, including the third control signal, the fourth control signal and the fifth control signal, which is selected by the control circuit, and the other signal is generated by changing the specified selected signal to obtain a smooth curve in the border region between the temperature range in which the ambient temperature is mentioned control circuit includes a first n-p-n transistor, the collector which is applied the power supply voltage, the base served first electrical signal, decreasing in proportion to the ambient temperature, and the emitter is connected to the input of the first current source; a second n-p-n transistor, the collector of which is supplied power supply voltage, the base served a second electrical signal that retain a specified amount regardless of the ambient temperature, and the emitter is connected to the input of the first current source; a third n-p-n transistor, the collector of which is supplied power supply voltage, the base served the third electrical signal, increasing in proportion to the ambient temperature, and the emitter is connected to the input of the first current source; a fourth n-p-n transistor, the collector and base of which is connected to the output of the second current source having a current value is two times less than the amount of current of the first current source and the emitter is connected to the input of the first current source; a first p-n-p transistor, the base of which is connected to the collector of the fourth n-p-n transistor, the emitter is connected to an output of the third current source and the collector is grounded; a second p-n-p transistor, on the basis of which a fourth electrical signal that preserves the given collector grounded; a third p-n-p transistor, the base of which a fifth electrical signal, decreasing in proportion to the ambient temperature, the emitter is connected to an output of the third current source and the collector is grounded, and the fourth p-n-p transistor, the emitter of which is connected to the output of the third current source, and a collector and base connected to the input of the fourth current source having a current value is two times less than the amount of current of the third current source, and referred to the fourth n-p-n transistor is designed for selecting from among the first, the second and third electrical signals, the electrical signal having the maximum voltage value, and output the selected electrical signal at its collector as a sixth electrical signal; the fourth p-n-p transistor is used to select from among the fourth, fifth and sixth electrical signal electrical signal having a minimum voltage value, and output the selected electrical signal at its collector as a seventh electrical signal, and the control circuit delivers at its output a seventh electrical signal as mentioned control signal.

3. Fun is the source current of series-connected first resistor, a second resistor connected in series between the emitter of the second n-p-n transistor and the first current source, a third resistor connected in series between the emitter of the third n-p-n transistor and the first current source, a fourth resistor connected in series between the emitter of the fourth n-p-n transistor and the first current source, a fifth resistor connected in series between the emitter of the first p-n-p transistor and the third current source, a sixth resistor connected in series between the emitter of the second p-n-p transistor and the third current source, a seventh resistor connected in series between the emitter of the third p-n-p transistor and the third current source and the eighth resistor connected in series between the emitter of the fourth p-n-p-transitory and the third current source.

4. Functional Converter according to p. 1, characterized in that the control circuit includes a selection of the maximum value for receiving the aforementioned first, second and third control signals and feed the output of these signals, which has a maximum value at a given temperature within any of the above-mentioned first, second and third temperature ranges, and the schema in which ignal from the scheme of allocation of the maximum value and feed the output of these signals, which has a minimum value at a given temperature within any of the above-mentioned fourth and fifth temperature intervals; these control signal being output from the control circuit, an output signal circuit selection the minimum value.

5. Functional Converter according to p. 1, characterized in that the control circuit includes a selection of the maximum value, which contains the first differential amplification circuitry with the first group of three inputs for receiving the aforementioned first, second and third control signals, respectively, for supplying output signals corresponding to a signal obtained by dividing each of the first, second and third control signals based on the resistance of each of the nodes, which are connected together by a transistor circuit comprising a first differential amplification circuitry, and each of the first group of inputs; and the allocation of the minimum value, which contains the second differential amplification circuitry with the second group of three inputs for receiving the aforementioned fourth and fifth control signals and the output signal from the circuit selection maximum value of control signals and the output signal from the circuit selection and maximum values, based on the resistance nodes, which are connected together by a transistor circuit comprising a second differential amplification circuitry, and each of the second group of inputs, and the aforementioned control signal being output from the control circuit, an output signal circuit selection the minimum value.

6. Functional Converter according to p. 1, characterized in that the control circuit includes a selection minimum value for the reception of the mentioned third, fourth and fifth control signals and feed the output of these control signals, which has a minimum value at a given temperature within any of the above-mentioned third, fourth and fifth temperature intervals, and circuit isolation maximum values for receiving first and second control signals and the output signal from the circuit selection minimum value and to supply the output of these signals, which has a maximum value at a given temperature within any of the first and second temperature intervals, and the aforementioned control signal being output from the control circuit, an output signal circuit selection is the exercise contains the allocation of the minimum value, containing the first differential amplification circuitry with the first group of three inputs for receiving the mentioned third, fourth and fifth control signals, respectively, and supply the output signal corresponding to a signal obtained by dividing each of the above-mentioned third, fourth and fifth control signals, based on the resistance of each of the nodes, which are connected together by a transistor circuit comprising a first differential amplification circuitry, and each of the first group of inputs, and the allocation of the maximum value, which contains the second differential amplification circuitry with the second group of three inputs for receiving the aforementioned first and second control signals and the output signal from the circuit selection minimum value, for supplying output signals corresponding to a signal obtained by dividing each of the first and second control signals and the output signal from the circuit selection minimum value based on the resistance of each of the nodes, which are connected together by a circuit transistors constituting the second differential amplification circuitry, and each of the second group of inputs, and the aforementioned control signal applied to the output of the real Converter according to p. 1, characterized in that the said storage device contains the schema of the input data on the memory device, a persistent storage device and the switching circuitry, the circuit of the data input of the operational storage device is designed to convert serial data received from outside, in the parallel data on the basis of the synchronization signal when the enable signal indicates that the operation is allowed, and for filing formed of multiple parallel data in a persistent storage device and circuit switching; programmable permanent memory is designed for recording the mentioned parallel data received from the schema of the input data on the memory device, in the data storage scheme, which is part of the programmable permanent memory device, when the control signal read-write indicates that the write operation is allowed, and for supplying parallel data in circuit switching, when the control signal read-write indicates that the read operation is allowed, and the circuit switch is used to select either parallel data supplied from the circuit input fasting device, and supply the selected parallel data output.

9. Block crystal oscillator containing a first method of forming the analog signal to generate and supply to the output of the specified analog signal that is essentially independent of ambient temperature; a second circuit forming the analog signal to generate and supply to the analog signal, depending on the ambient temperature; a storage device for storing management data corresponding respectively to the first, second, third, fourth and fifth intervals of temperature, obtained by dividing the range of possible ambient temperature for five continuous parts in the above-mentioned order in the direction from low temperature to high; the third scheme of the formation of the analog signal for a reception signal from the first generation analog signal, receiving the signal from the second generation of the analog signal and receiving management data from the storage device and for forming and feeding the output of the first, second, third, fourth and fifth control signals corresponding to five temperature intervals, respectively, a control circuit for prietary based on each received signal to supply the output of the and circuit of the crystal oscillator, intended for receiving the control signal from the control circuit and controlled by this signal so that the oscillation frequency was equal to a predetermined value, and the storage device stores as mentioned management data of the first size aspect ratio that determines the ratio of the coefficient of proportionality between the temperature used to generate the first control signal, and its output value to the coefficient of the cubic component of the temperature characteristics of the oscillation frequency of the crystal oscillator; a second value of the aspect ratio that determines the ratio of the constant relating temperature used to generate the second control signal, and its output value to a specified coefficient of the cubic component; the third largest proportion determining the ratio of the coefficient of proportionality between the temperature used to generate the third control signal, and its output value to a specified coefficient of the cubic component; a fourth value of the aspect ratio that determines the ratio of the constant relating temperature used to generate the fourth control signal, and its output Velich is efficient proportionality between temperature, used to generate the fifth control signal, and its output value to a specified coefficient of the cubic component, and when the ambient temperature is in any of the first, second and third temperature ranges specified in the control signal being output from the control circuit contains any of the first, second and third control signals, which are selected by the control circuit, and the other signal is generated by changing the selected signal to obtain a smooth curve in the border region between the temperature range in which the ambient temperature, and the adjacent interval, and when the ambient temperature is in the fourth or fifth temperature range, the control signal being output from the control circuit comprises at least one from among first, second and third control signals, including the third control signal, the fourth control signal and the fifth control signal, which is selected by the control circuit, and the other signal is generated by changing the specified selected signal to form a smooth curve in the border region between interval theblock oscillator by p. 9, characterized in that the control circuit includes a first n-p-n transistor, the collector of which is supplied power supply voltage, the base served first electrical signal, decreasing in proportion to the ambient temperature, and the emitter is connected to the input of the first current source; a second n-p-n transistor, the collector of which is supplied power supply voltage, the base served a second electrical signal that retain a specified amount regardless of the ambient temperature, and the emitter is connected to the input of the first current source; a third n-p-n transistor, the collector which is applied the power supply voltage, the base served the third electrical signal, increasing in proportion to the ambient temperature, and the emitter is connected to the input of the first current source; a fourth n-p-n transistor, the collector and base of which is connected to the output of the second current source having a current value is two times less than the amount of current of the first current source and the emitter is connected to the input of the first current source; a first p-n-p transistor, the base of which is connected to the collector of the fourth n-p-n transistor, emitter - the output of the third current source and the collector is grounded; a second p-n-p transistor, the base environment, the emitter is connected to an output of the third current source and the collector is grounded; a third p-n-p transistor, the base of which a fifth electrical signal, decreasing in proportion to the ambient temperature, the emitter is connected to an output of the third current source and the collector is grounded, and the fourth p-n-p transistor, the emitter of which is connected to the output of the third current source and the collector and the base, with the input of the fourth current source having a current value is two times less than the amount of current of the third current source, and referred to the fourth n-p-n transistor is designed for selecting from among the first, second and third electrical signals, the electrical signal having the maximum voltage value, and output the selected electrical signal at its collector as a sixth electrical signal; the fourth p-n-p transistor is used to select from among the fourth, fifth and sixth electrical signal electrical signal having a minimum voltage value, and output the selected electrical signal at its collector as a seventh electrical signal, and the control circuit delivers at its output a seventh electrical signal in cacto it between the emitter of the first n-p-n transistor and the first current source series-connected first resistor, a second resistor connected in series between the emitter of the second n-p-n transistor and the first current source, a third resistor connected in series between the emitter of the third n-p-n transistor and the first current source, a fourth resistor connected in series between the emitter of the fourth n-p-n transistor and the first current source, a fifth resistor connected in series between the emitter of the first p-n-p transistor and the third current source, a sixth resistor connected in series between the emitter of the second p-n-p transistor and the third current source, a seventh resistor connected in series between the emitter of the third p-n-p transistor and the third current source and the eighth resistor connected in series between the emitter of the fourth p-n-p transistor and the third current source.

12. Unit oscillator under item 9, characterized in that the said storage device comprises random access memory and a persistent storage device, and random access memory intended for storing the control signals from the first to the fifth produced by the control circuit by changing each of these parameters in relation to each of upravlja oscillation circuit crystal oscillator, and a persistent storage device is programmable and is designed for storing the optimal parameter from among the above-mentioned parameters for each of the control signals.

13. Unit oscillator under item 9, characterized in that it further comprises means optimization for optimization of control signals generated by the control circuit, independently from each other and in accordance with the coefficient of the cubic component of the temperature characteristics, the coefficient of linear component of the temperature characteristics, the frequency deviation from the nominal value when the temperature of the inflection point and the specified temperature of the inflection point of the temperature characteristics of the oscillation frequency of the circuit of the crystal oscillator.

14. Unit oscillator under item 9, characterized in that the control circuit includes a selection of the maximum value for receiving the aforementioned first, second and third control signals and feed the output of these control signals, which has a maximum value at a given temperature within any of the above-mentioned first, second and third temperature intervals, and circuit isolation minima selection of the maximum value and feed the output of these signals, which has a minimum value at a given temperature within any of the above-mentioned fourth and fifth intervals of temperatures, and the aforementioned control signal being output from the control circuit, an output signal circuit selection the minimum value.

15. Unit oscillator under item 9, characterized in that the control circuit includes a selection of the maximum value, which contains the first differential amplification circuitry with the first group of three inputs for receiving the aforementioned first, second and third control signals, respectively, for supplying output signals corresponding to a signal obtained by dividing each of the first, second and third control signals based on the resistance of each of the nodes, which are connected together by a transistor circuit comprising a first differential amplification circuitry, and each of the first group of inputs, and the allocation of the minimum value, which contains the second differential amplification circuitry with the second group of three inputs for receiving the aforementioned fourth and fifth control signals and the output signal from the circuit selection the maximum value for p is shining signals and the output signal from the circuit selection and maximum values, based on the resistance nodes, which are connected together by a transistor circuit comprising a second differential amplification circuitry, and each of the second group of inputs, and the aforementioned control signal being output from the control circuit, an output signal circuit selection the minimum value.

16. Unit oscillator under item 9, characterized in that the control circuit includes a selection minimum value for the reception of the mentioned third, fourth and fifth control signals and feed the output of these control signals, which has a minimum value at a given temperature within any of the above-mentioned third, fourth and fifth temperature intervals, and circuit isolation maximum values for receiving first and second control signals and the output signal from the circuit selection minimum value and to supply the output of these signals, which has a maximum value at a given temperature within any of the first and second temperature intervals; and referred to the control signal being output from the control circuit, an output signal circuit allocation maksymalnie contains the allocation of the minimum value, containing the first differential amplification circuitry with the first group of three inputs for receiving the mentioned third, fourth and fifth control signals, respectively, and supply the output signal corresponding to a signal obtained by dividing each of the above-mentioned third, fourth and fifth control signals, based on the resistance of each of the nodes, which are connected together by a transistor circuit comprising a first differential amplification circuitry, and each of the first group of inputs, and the allocation of the maximum value, which contains the second differential amplification circuitry with the second group of three inputs for receiving the aforementioned first and second control signals and the output signal from the scheme of allocation of the minimum value and the filing of the output signal corresponding to a signal obtained by dividing each of the first and second control signals and the output signal from the circuit selection minimum value based on the resistance of each of the nodes, which are connected together by a circuit transistors constituting the second differential amplification circuitry, and each of the second group of inputs, and the aforementioned control signal being output from Zhevago generator by p. 9, characterized in that the said storage device contains the schema of the input data on the memory device, a persistent storage device and the switching circuitry, the circuit of the data input of the operational storage device is designed to convert serial data received from outside, in the parallel data on the basis of the synchronization signal when the enable signal indicates that the operation is allowed, and for filing formed of multiple parallel data in a persistent storage device and circuit switching; programmable permanent memory is designed for recording the mentioned parallel data received from the schema of the input data on the memory device, in the data storage scheme, which is part of the programmable permanent memory device, when the control signal read-write indicates that the write operation is allowed to supply the parallel data to the switching circuitry when the control signal read-write indicates that the read operation is allowed, and the circuit switch is used to select either parallel data supplied from the circuit input is fasting device, and supply the selected parallel data output.

19. The method of adjustment of the block of crystal oscillator containing a first method of forming the analog signal to generate and supply to the output of the specified analog signal that is essentially independent of ambient temperature; a second circuit forming the analog signal to generate and supply to the analog signal, depending on the ambient temperature; a control circuit for receiving the signal from the first generation analog signal and the signal from the second generation of the analog signal, and to generate and supply to the output control signals corresponding to five temperature ranges obtained by dividing the possible range of ambient temperatures on the first, the second, third, fourth and fifth intervals of temperatures in the specified order with no gaps in the direction from low temperature to high temperature, the circuit of the crystal oscillator intended for receiving the control signal from the control circuit and controlled by this signal so that the oscillation frequency was equal to a predetermined value, the operational storage device for storing pariah parameters for each of the control signals, these parameters are intended to compensate the temperature dependence of the oscillation frequency of the circuit of the crystal oscillator, and programmable permanent memory for storing the optimal parameter values for each of the control signals, the control circuit outputs the first control signal, the output value of which decreases proportionally with the increase in temperature, when the ambient temperature is within a first temperature range; a second control signal, the output value of which is continuous with the first control signal and that has the specified value does not depend on temperature, when the ambient temperature is the second temperature range; and the third control signal, the output value of which is inextricably with the second control signal and increases proportionally with the increase in temperature, when the ambient temperature is in the third temperature range; a fourth control signal, the output value of which is continuous with the third control signal and has a given value, independent of temperature when the ambient temperature is in the fourth rtim control signal and decreases proportionally with the increase in temperature, when the ambient temperature is in the fifth temperature range; however, according to this method determines individual parameters by storage unit of the crystal oscillator at temperature, continuously changing from the first temperature to the fifth temperature range, and the parameter calculation control signals corresponding respectively to the coefficient of the cubic component of the temperature characteristics, the coefficient of linear component of the temperature characteristics, the frequency deviation from the nominal frequency when the temperature of the inflection point and the specified temperature of the inflection point of the temperature characteristics of the circuit of the crystal oscillator, thus to make caused by temperature change of the oscillation frequency of the circuit of the crystal oscillator is essentially equal to zero; determine the source parameters by measuring the initial temperature characteristics of control signals generated by the control circuit, and the parameter calculation control signals corresponding respectively to the coefficient of the cubic component of the temperature characteristics, the coefficient of linear component of the temperature characteristics, disturbances and implement the optimal recording parameter by determining the quantities of changes of control signals on the data unit, the relevant parameters of the compensation temperature stored in the memory device, by measuring the value of changes in source temperature characteristics when changes to the data corresponding to parameters of temperature compensation, determine the difference between the original parameters and individual parameters, determine the optimal parameter for the specified control signals in such a way as to minimize said difference on the basis of these values changes the control signals per unit of the specified data, and writes the specified optimal parameter in a persistent storage device.

20. The method of adjustment of the block of crystal oscillator containing a first method of forming the analog signal to generate and supply to the output of the specified analog signal that is essentially independent of ambient temperature; a second circuit forming the analog signal to generate and supply to the analog signal, depending on the ambient temperature; a control circuit for receiving the signal from the first generation analog signal and the signal from the second generation analog spiratory, obtained by dividing the possible range of ambient temperatures on the first, second, third, fourth and fifth intervals of temperatures in the specified order with no gaps in the direction from low temperature to high temperature, the circuit of the crystal oscillator intended for receiving the control signal from the control circuit and controlled by this signal so that the oscillation frequency was equal to a predetermined value, the operational storage device for storing control signals from the first to the fifth produced by the control circuit by changing each of these parameters in relation to each of the control signals, these parameters are intended to compensate for the temperature dependence of the frequency of the oscillation circuit crystal oscillator and programmable permanent memory for storing the optimal parameter values for each of the control signals, the control circuit outputs the first control signal, the output value of which decreases proportionally with the increase in temperature, when the ambient temperature is within a first temperature range; a second control signal, the output led is temperature, when the ambient temperature is the second temperature range; and the third control signal, the output value of which is inextricably with the second control signal and increases proportionally with the increase in temperature, when the ambient temperature is in the third temperature range; a fourth control signal, the output value of which is continuous with the third control signal and has a given value, independent of temperature when the ambient temperature is within a fourth range of temperatures, and the fifth control signal, the output value of which is continuous with the fourth control signal, and decreases proportionally with the increase in temperature, when the ambient temperature is in the fifth temperature range; however, according to this method measure the individual control voltage, which reduces the frequency change of the oscillation circuit crystal oscillator, caused by changes in temperature, to a value close to zero, by storage unit of the crystal oscillator at temperature, continuously changing from the first temperature to a fifth temperature; define ini, the coefficient of linear component of the temperature characteristics, the frequency deviation from the nominal frequency when the temperature of the inflection point and the specified temperature of the inflection point temperature characteristic of the quartz resonator in the above diagram of the crystal oscillator, on the basis of the temperature dependence of the specified individual control voltage; measure the temperature characteristic of the source of control voltage referred to the control circuit by changing parameters temperature compensation, received, and stored random access memory device; determine source parameters based on the mentioned temperature characteristics of the source of control voltage by calculating the parameters of control signals corresponding to the coefficient of the cubic component of the temperature characteristics, the coefficient of linear component of the temperature characteristics, the frequency deviation from the nominal frequency when the temperature of the inflection point and the specified temperature of the inflection point of the characteristic of the quartz resonator in the circuit of the crystal oscillator; calculate the magnitude of change one bit settings temperature compensation data stored in the above-mentioned optimal option that reduces said difference to a value close to zero, based on the aforementioned calculated value changes by one bit.

21. Functional Converter comprising first circuit forming the analog signal to generate and supply to the output of the specified analog signal that is essentially independent of ambient temperature; a second circuit forming the analog signal to generate and supply to the analog signal, depending on the ambient temperature; the third scheme of the formation of the analog signal for a reception signal from the first generation analog signal and the signal from the second generation of the analog signal, and to generate and supply to the output control signals corresponding to five temperature ranges obtained by dividing the possible range of ambient temperatures on the first, the second, third, fourth and fifth intervals of temperatures in the specified order with no gaps in the direction from low temperature to high temperature, and a control circuit for selecting any of the aforementioned control signals and the formation of the selected signal of the control signal, which is the function of the Finance first control signal to supply the first control signal, output the magnitude of which varies proportionally with the increase in temperature with the first gain when the ambient temperature is within a first temperature range; a method of forming the second control signal to supply the second control signal, the output value which is a predetermined value that does not depend on temperature, when the ambient temperature is the second temperature range; a method of forming the third control signal for supplying a third control signal, output the magnitude of which varies proportionally with the increase in temperature with the second coefficient when the ambient temperature is in the third temperature range; a method of forming a fourth control signal to supply the fourth control signal, output value which is a predetermined value that does not depend on temperature, when the ambient temperature is within a fourth range of temperatures, and a method of forming a fifth control signal for supplying a fifth control signal, output the magnitude of which varies proportionally with the increase in temperature with a third coefficient, and the said scheme upravlja control signals and supply the output signal of the maximum value of these signals, which has a maximum value, and circuit isolation signal minimum value for receiving the above-mentioned signal of the maximum value, the fourth and fifth control signals and supply the output signal of the minimum value of the received signals, which has a minimum value, and the specified minimum signal value is the above-mentioned control signal generated by the control circuit.

22. Functional Converter comprising first circuit forming the analog signal to generate and supply to the output of the specified analog signal that is essentially independent of ambient temperature; a second circuit forming the analog signal to generate and supply to the analog signal, depending on the ambient temperature; the third scheme of the formation of the analog signal for a reception signal from the first generation analog signal and the signal from the second generation of the analog signal, and to generate and supply to the output control signals corresponding to five temperature ranges obtained by dividing the possible range of ambient temperatures on the first, second, the temperature to high temperature, and a control circuit for selecting any of the aforementioned control signals and the formation of the selected signal of the control signal, which is a function of the temperature, and the aforementioned third method of forming the analog signal contains a diagram of the formation of the first control signal to supply the first control signal, output the magnitude of which varies proportionally with the increase in temperature with the first gain when the ambient temperature is within a first temperature range; a method of forming the second control signal to supply the second control signal, the output value which is a predetermined value that does not depend on temperature, when the ambient temperature is the second temperature range; a method of forming the third control signal for supplying a third control signal, output the magnitude of which varies proportionally with the increase in temperature with the second coefficient when the ambient temperature is in the third temperature range; a method of forming a fourth control signal to supply the fourth control signal, the output value of which is pre-ass the shaft temperature and a method of forming a fifth control signal for supplying a fifth control signal, output the magnitude of which varies proportionally with the increase in temperature with a third coefficient, and the said control circuit includes a selection signal minimum value for the reception of the mentioned third, fourth and fifth control signals and supply the output signal of the minimum value of these signals, which has a minimum value, and circuit isolation signal maximum value for receiving the above-mentioned signal minimum value, the first and second control signals and supply the output signal of the maximum value of the received signals, which has a maximum value, and the above-mentioned signal maximum value is referred to as a control signal, supplied to the output control circuit.

23. Crystal oscillator containing a first method of forming the analog signal to generate and supply to output a predetermined analog signal that is essentially independent of ambient temperature; a second circuit forming the analog signal to generate and supply to the analog signal, depending on the ambient temperature; a third method of forming the analog signal is an analog signal, and also for forming and feeding the output control signals corresponding to the five intervals of temperature, obtained by dividing the possible range of ambient temperatures on the first, second, third, fourth and fifth intervals of temperatures in the specified order with no gaps in the direction from low temperature to high temperature, the control circuit for selecting any of the aforementioned control signals and the formation of the selected signal of the control signal, which is a function of the temperature, and the circuit of the crystal oscillator intended for receiving the control signal from the control circuit and controlled by this signal, so that the oscillation frequency was equal to a predetermined value, and the aforementioned third method of forming the analog signal contains a diagram of the formation of the first control signal to supply the first control signal, output the magnitude of which varies proportionally with the increase in temperature with the first gain when the ambient temperature is within a first temperature range; a method of forming the second control signal to supply the second control signal, the output value of which is C the second temperature range; a method of forming the third control signal for supplying a third control signal, output the magnitude of which varies proportionally with the increase in temperature with the second coefficient when the ambient temperature is in the third temperature range; a method of forming a fourth control signal to supply the fourth control signal, the output value which is a predetermined value that does not depend on temperature, when the ambient temperature is within a fourth range of temperatures; a method of forming a fifth control signal for supplying a fifth control signal, output the magnitude of which varies proportionally with the increase in temperature with a third coefficient, and the said control circuit includes a selection signal maximum value for receiving the aforementioned first, second and third control signals and supply the output signal of the maximum value of these signals, which has a maximum value, and circuit isolation signal minimum value for receiving the above-mentioned signal of the maximum value, the fourth and fifth control signals and supply the output signal minimum the minimum value is referred to as a control signal, generated by the control circuit.

24. Crystal oscillator containing a first method of forming the analog signal to generate and supply to output a predetermined analog signal that is essentially independent of ambient temperature; a second circuit forming the analog signal to generate and supply to the analog signal, depending on the ambient temperature; the third scheme of the formation of the analog signal for a reception signal from the first generation analog signal and the signal from the second generation of the analog signal, and to generate and supply to the output control signals corresponding to the five intervals of temperature, obtained by dividing the possible range of ambient temperatures on the first, the second, third, fourth and fifth intervals of temperatures in the specified order with no gaps in the direction from low temperature to high temperature, the control circuit for selecting any of the aforementioned control signals and the formation of the selected signal of the control signal, which is a function of the temperature, and the circuit of the crystal oscillator intended for receiving the control signal Ateneo, moreover, the aforementioned third method of forming the analog signal contains a diagram of the formation of the first control signal to supply the first control signal, output the magnitude of which varies proportionally with the increase in temperature with the first gain when the ambient temperature is within a first temperature range; a method of forming the second control signal to supply the second control signal, the output value which is a predetermined value that does not depend on temperature, when the ambient temperature is the second temperature range; a method of forming the third control signal for supplying a third control signal, output the magnitude of which varies proportionally with the increase in temperature with a second coefficient, when the ambient temperature is in the third temperature range; a method of forming a fourth control signal to supply the fourth control signal, the output value which is a predetermined value that does not depend on temperature, when the ambient temperature is within a fourth range of temperatures, and a method of forming the fifth control signal is atmospheric temperature with a third coefficient, and the said control circuit includes a selection signal minimum value for the reception of the mentioned third, fourth and fifth control signals and supply the output signal of the minimum value of these signals, which has a minimum value, and circuit isolation signal maximum value for receiving the above-mentioned signal minimum value, the first and second control signals and supply the output signal of the maximum value of the received signals, which has a maximum value, and the above-mentioned signal maximum value is referred to as a control signal generated by the control circuit.

25. Functional Converter comprising first circuit forming the analog signal to generate and supply to output a predetermined analog signal that is essentially independent of ambient temperature; a storage device for storing management data corresponding respectively to the first, second and third temperature intervals obtained by dividing the range of possible ambient temperature for three continuous parts in the above-mentioned order in the direction from the first generation analog signal and data management of the said storage device and for forming and feeding the output of the first, the second and third control signals, corresponding to the mentioned three temperature ranges, respectively, and a control circuit for receiving the first, second and third control signals and provide a control signal as a function of temperature based on each received signal for supply to the output, while the storage device stores the following data management the first value of the aspect ratio defines the ratio of the coefficient of proportionality between the temperature used to generate the first control signal, and its output value to the coefficient of the cubic component of the temperature characteristics of the oscillation frequency of the crystal oscillator; a second value of the aspect ratio that determines the ratio of the coefficient of proportionality between temperature, used to generate the second control signal, and its output value to the coefficient of the cubic component and the third value of the aspect ratio that determines the ratio of the coefficient of proportionality between the temperature used to generate the third control signal, and its output value to the coefficient of the cubic component, and will mention what about the control signals and feed the output of these signals, which has a maximum value at a given temperature within any of the above-mentioned first and second temperature ranges, and the allocation of the minimum value for admission referred to the third control signal and the output signal from the circuit selection and maximum values, and feed the output from them which has a minimum value at a given temperature within the third temperature range, and the aforementioned control signal being output from the control circuit, an output signal circuit selection the minimum value.

26. Functional Converter according to p. 25, characterized in that the allocation of the maximum value includes the first differential amplification circuitry with the first group of two inputs for receiving the aforementioned first and second control signals, respectively, and supply the output signal corresponding to a signal obtained by dividing each of the said first and second control signals based on the resistance of each of the nodes, which are connected together by a transistor circuit comprising a first differential amplification circuitry, and each of the first group of inputs and the above mentioned schemes is input for receiving the aforementioned third control signal and the signal supplied from the scheme of allocation of the maximum value, for supplying output signals corresponding to a signal obtained by dividing each of the third control signal and the signal from the scheme of allocation of the maximum value based on the resistance nodes, which are connected together by a transistor circuit comprising a second differential amplification circuitry, and each of the second group of inputs.

27. Functional Converter comprising first circuit forming the analog signal to generate and supply to output a predetermined analog signal that is essentially independent of ambient temperature; a storage device for storing management data corresponding respectively to the first, second and third temperature intervals obtained by dividing the range of possible ambient temperature for three continuous parts in the above-mentioned order in the direction from low temperature to high; a second circuit forming an analog signal for receiving the above-mentioned signal from the first generation analog signal and data management of the said storage device and for forming and feeding on withoutgetting, and a control circuit for receiving the first, second and third control signals and provide a control signal as a function of temperature based on each received signal for supply to the output, while the storage device stores the following data management the first value of the aspect ratio defines the ratio of the coefficient of proportionality between the temperature used to generate the first control signal, and its output value to the coefficient of the cubic component of the temperature characteristics of the oscillation frequency of the crystal oscillator; a second value of the aspect ratio that determines the ratio of the coefficient of proportionality between the temperature used to generate the second control signal, and its output value to the coefficient of the cubic component, and the third value of the aspect ratio that determines the ratio of the coefficient of proportionality between the temperature used to generate the third control signal, and its output value to the coefficient of the cubic component, and said control circuit includes a selection minimum value for receiving the aforementioned second and third UE is any of the second and third temperature ranges and the allocation of the maximum value for the reception of the mentioned first control signal and the output signal from the circuit selection minimum value, and submit to the output of the received signals, which has a maximum value at a given temperature within the first temperature range, and the aforementioned control signal being output from the control circuit, an output signal circuit of the selection of the maximum value.

28. Functional Converter according to p. 27, characterized in that the allocation of the minimum value contains the first differential amplification circuitry with the first group of two inputs for receiving mentioned respectively the second and third control signals for forming a signal corresponding to a signal obtained by dividing each of the second and third control signals based on the resistance of each of the nodes, which are connected together by a transistor circuit comprising a first differential amplification circuitry, and each input of the said first group of inputs, as mentioned, the allocation of the maximum values of the second differential amplification circuitry with the second group of two inputs for receiving the mentioned first control signal and the output signal from the circuit selection minimum value for the filing of the output signal corresponding to a signal obtained by dividing each ostavlyaemye second differential amplification circuitry, and each input of the said second group of inputs.

 

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