A method of manufacturing a solid-state device

 

(57) Abstract:

The invention relates to semiconductor electronics and can be used in the manufacture of solid-state devices and their electrodes. The method includes forming contact pads (CP) on the substrate (P), coating the resulting structure of the dielectric layer (D), delete D over KP and attaching to the CP of the conductor. Additionally, the method provides for abandonment is not filled with the material of the Windows in KP during its formation and abandonment On Windows if you remove it over KP. The several conditions on the square Windows in the CP and specific friction materials with each other, allows increasing the mechanical strength of the structure "CP - P" due to the interaction of the material with KP D in Windows. The invention allows to increase the breakout pads attached to the conductor from the substrate, which increases the reliability of the device. 2 Il.

The invention relates to semiconductor electronics and can be used in the manufacture of solid-state devices and their electrodes.

A known method of manufacturing a solid-state device, comprising forming on the surface of the substrate contact pads of the conductive materialand to passivate the surface of the substrate [1].

Significant viscosity of the compound when filling, deformation during solidification, is different from the substrate material and guides thermal expansion coefficient lead to additional mechanical stress on the contact and the conductor pads, which reduces the reliability of the device. Maintaining reliability characteristics by increasing the area of contact of the conductor with ground forces to use conductors of large cross-sectional area. This leads to increase the area of contact pads and its parasitic capacitance. These factors limit the application of this method.

The closest set of features is a method of manufacturing a solid-state device [2], which also form the contact area of conductive material on part of the substrate surface, then cover the surface of the substrate and contact pads pestiviruses dielectric layer, the specific (per unit area) adhesive force with which the substrate is greater specific force of adhesion with the substrate contact pads, then remove the insulator on the contact pad and attach to the pad conditioner, breakout which is rebora choice of cross-sectional area of the conductor is determined only by the density flowing through it current, to reduce the cross-sectional area of the conductor and, therefore, the area of the contact pads and its parasitic electric capacity.

Small adhesive force contact area with the substrate often leads to exfoliation that removes the device from the system.

The claimed invention is intended to increase the efforts of the separation pad from the substrate, and in its implementation may be improved in reliability of the device.

The above task is solved in that in the known method of manufacturing a solid-state device, comprising forming on part of the surface of the substrate contact pads of conductive material, coating the surface of the substrate and the pad dielectric layer, the specific strength of adhesion with the substrate more specific force of adhesion with the substrate contact pads PL-premoving dielectric over the contact pad and attach to the ground conductor, the specific adhesive force with which the material sitemmorePL-paccording to the invention during the formation of contact pads within its area leave at least one window, empty conductive material, and when in the AMI area pads inside the external borders of the SPLsatisfy the conditions

SoPP-p<PdPLPL-d; (1)

SPLPL-p<Sm+Smod, (2)

where Rabout- the perimeter of the window; dPLthe thickness of the pad;PL-d- the specific strength of coupling pads with dielectric; Smoand Sm- contact area of the conductor, respectively, with the dielectric in the Windows to the material of the contact pads;d- the specific strength of coupling a conductor with the dielectric Windows.

Obtained by carrying out the invention the technical result, namely improving the reliability of the solid-state device, is achieved due to the fact that the presence of pad boxes filled with a dielectric having a relatively large specific bond strength with the substrate material and the material of the pad, under the conditions (1) and (2) leads to an increase in the efforts of the separation pad from the substrate.

Thus, in the method prototype force of the separation pad from the backing sheet

F1= SPLPL-p. (3)

In the proposed method the force of the separation pad from the backing sheet

F2= (SPL-S0)PL-p+SbPL-d, (4)

where

the nd with the dielectric. To achieve a positive effect should be condition

F2> F1,

which is ensured by the inequality (1) is the first condition of the claims.

In the proposed method window in the pad can get into the area of the contact pad with a conductor that causes compared with the prototype breakout forces f1of the conductor to the contact area because of less, in most cases, the specific strength of coupling a conductor with dielectricdin the window compared to the percentage cohesive strength of the conductor material padsm. To this decrease did not hinder the achievement of positive effect obtained in the proposed method the power of separation of the conductor from the contact pads with Windows

f2= Smm+Sdd(6)

must be greater than the force of the separation pad from the substrate in the prototype, i.e.

F1< f2.

This condition is ensured by the inequality (2) is the second condition of the claims.

In Fig.1 shows a General top view of the solid-state device, the manufacture of which implemented the proposed method, Fig.2 - section ecogeochemistry in boxes 3, Explorer 5.

When the implementation of the proposed way leave the window 3 in the area 2 and the dielectric fill them with implementation of the conditions (1) and (2), the reduction of the friction pad with the substrate 1 due to losses in the area of their grip on the amount of square Windows abundantly compensated by the force of adhesion sites with the dielectric, with whom she is in contact with the side surfaces of the 3 Windows. The breakout pads 2 from the substrate 1 increases and approaches the breakout of the conductor 5 from the platform 2. Despite a possible reduction in the strength of coupling a conductor with ground, this power is subject to the condition (2) exceeds the force of adhesion sites with the substrate in the device manufactured by the method of the prototype. All this leads to an increase efforts fracture patterns "background - space - Explorer" and ultimately, to improving the reliability of the solid-state device.

Example. When implementing the invention in the process of manufacturing the solid-state device on the surface of silicon oxide, thermally grown on a silicon substrate, an aluminum layer thickness of 2.5 μm was formed on 8 identical pads rectangular shape with dimensions of h μm2. Within each square with the distance between adjacent edges of the Windows in rows of 4 μm and inter-row distance of 4 μm. In another implementation of the invention within each site was formed 96 such as Windows, arranged in 12 rows and 8 boxes in a row with a distance between adjacent edges of the window 6 μm. Surface of the substrate together with the grounds were covered with pyrolytic silicon oxide, which after removing it from the sites remained in boxes. For each site method thermocompression joined guidewire diameter of 50 μm. The average pullout force platform measured by highly sensitive dynamometer, was for the first implementation 15,1110-3N, for the second - 13,4510-3N when the slew rate pull force of no more than 10-3N/S. For comparison, the average force of the separation pad in the form of a solid rectangle of the same size was 11,3710-3H under the same conditions of measurement.

LITERATURE

1. The design and technology of integrated circuits. / Koledov L. A., Volkov, C. A., N. Dokuchaev.And. and other edited Kolegova L. A. - M.: the High. HQ., 1984, S. 183.

2. Ibid - S. 170 and 171 prototype.

A method of manufacturing a solid-state device, comprising forming on part of the surface of the substrate contact pads of conductive material, the surface coating sing friction with the substrate contact padsPL-premoving dielectric over the contact pad and attach to the ground conductor, the specific adhesive force with which the material sitemmorePL-p, characterized in that when forming the contact pads within its area leave at least one window, not filled with a conductive material, and deleting dielectric over the contact pad leave it in the box, with a square window Saboutand in common with Windows square pads inside the external borders of the SPLsatisfy the conditions

SoPP-p<PdPLPL-d;

SPLPL-p<Sm+Smod,

where Rabout- the perimeter of the window;

dPLthe thickness of the ground;

PL-d- the specific strength of coupling pads with dielectric;

Smoand Sm- contact area of the conductor, respectively, with the dielectric in the Windows to the material of the contact pads;

d- the specific strength of coupling a conductor with the dielectric Windows.

 

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