Microstrip load

 

(57) Abstract:

The invention relates to the technical field of the microwave. The technical result consists in increasing the permissible power dissipation and to increase the width of the working frequency band. Microstrip load contains a dielectric substrate on one side of which is a ground based, and on the other side of the film resistor, connected at one end to korotkozamknutyh, and the other end to the series-connected sections of microstrip lines connecting film resistor with the input microstrip line sections of microstrip line made of a layer of resistive material, the step of increasing width in the direction from the input microstrip line to the film resistor. At the joints of the sections of microstrip lines between them, the connection with the input microstrip line connection with a film resistor on sections of microstrip lines printed conductors having on the outer edges of the fillet, and on the inner edges of the ledges. The width of the layer of resistive material may be made variable through a quarter wavelength, fillets can be in the form of parts of a circle, the invoice is raised for radio, and more particularly to a technique of ultra-high frequency (UHF), and can be used in radar, radio and measurement techniques, mainly as a termination.

Known high-frequency resistor containing dielectric substrate, one side of which is a ground based, and on the other side resistive film having the shape of a half-ring to the inner arc of which is connected to the input microstrip line, and to external coreconnection. The resistive film is divided into concentric arcs on plots with different specific surface resistance, the value of which increases in the direction from the inner area to the outer (see A. C. USSR N 664250, H 01 R 1/24, BI N 19, 1979).

The disadvantages of this device are: first, a small allowable power dissipation (because the specified device is focused resistor); secondly, the specified device is very difficult in production (because each concentric resistive region is necessary to form the film with its value of specific surface resistance).

Known microstrip load containing dielectric mean the PRS, connected at one end to korotkozamknutyh, and the other end to the input microstrip line. Thin-film resistor deposited additional resistive layer, the surface resistivity of which is four times less than the specific surface resistance of the thin-film resistor, and the width decreases exponentially in the direction from the input microstrip line to korotkozamknutyh (see A. C. USSR N 1156169, H 01 R 1/26, BI N 18, 1985).

The disadvantage of this device is that it is difficult to manufacture (as it is necessary to form the resistive areas with significantly (four times) with different specific surface resistances).

Known taken as a prototype microstrip load containing dielectric substrate, one side of which is a ground based, and on the other side centered film resistor connected at one end to korotkozamknutyh, and the other end to the series-connected sections of microstrip lines connecting film resistor with the input microstrip line (see A. C. USSR N 1443061, H 01 R 1/26, BI N 45, 1988).

The disadvantages of this device are: first, mA working frequency band; thirdly, the possibility of local overheating in the joints of the sections of microstrip line (due to the jumps of the width of the microstrip line that is causing the heterogeneity of the distribution of the electromagnetic field); fourthly, the possibility of electrical breakdown in the joints of the sections of microstrip line (due to the jumps of the width of the microstrip line that is causing the heterogeneity of the distribution of the electromagnetic field).

Solved technical problem of the invention is, first, the increase in allowable power dissipation; second, increase the width of the working frequency band; third, the elimination of possible local overheating at the joints of the sections of microstrip lines; fourth, the elimination of the possibility of electrical breakdown in the joints of the sections of microstrip line.

Solved the technical problem is achieved by the fact that in the known microstrip load containing dielectric substrate, one side of which is a ground based, and on the other side of the film resistor, connected at one end to korotkozamknutyh, and the other end to the series-connected sections of microstrip lines, soedinenii of the layer of resistive material, speed increasing width in the direction from the input microstrip line to the film resistor, the junction of the sections of microstrip lines between them, the connection with the input microstrip line connection with a film resistor on sections of microstrip lines printed conductors having on the outer edges of the fillet, and on the inner edges of the ledges. The width of the layer of resistive material may be made variable through a quarter wavelength, fillets can be in the form of parts of a circle, the tabs of adjacent conductors can be made contiguous.

In Fig.1 and Fig.2 depicts the design options proposed device.

Microstrip load includes a dielectric substrate 1 (for example, paligorova substrate 1 mm thick with a relative dielectric constant equal to 9.6), one side of which is a ground base (not shown), and on the other side of the film resistor 2 (for example, 35 Ohm resistor of the resistive material with a specific surface resistance of 80 Ω/), connected at one end to korotkozamknutyh 3 (for example, consisting of pads and jumpers from copper fkno United plots 4 microstrip lines (for example, two quarter-wave section of microstrip lines) connecting the film resistor 2 with the input microstrip line 5 (for example, 50 Ohm microstrip line with a width of 1 mm). Sections of microstrip line 4 is made of a layer of resistive material (for example, with a specific surface resistance of 80 Ω/), speed increasing width in the direction from the input microstrip line 5 to the film resistor 2, the connection sections 4 microstrip lines between them, the connection with the input microstrip line 5, the compounds of the film resistor 2 for plots 4 microstrip lines printed conductors 6, having on the outer edges of the fillet 7, and the inner protrusions 8. Change the width of the layer of resistive material can occur through a quarter wavelength (for example, the width of the layer of resistive material of the two quarter-wave sections 4 microstrip lines, respectively, in the direction from the input microstrip line 5 to the film resistor 2) w'=1.3 mm, w=1.6 mm such that there is formed a two-stage Chebyshev transformer, and the length of each segment is equal to, for example, 5.5 mm (center frequency 5 GHz)), fillets 7 can be in the form of parts of the device (see Fig.2) the protrusions 8 may have a trapezoidal shape, moreover, the tabs of adjacent conductors in contact (for example, vertices of the trapezoid).

Received in the input microstrip line 5 of the proposed device (see Fig.1, figs.2) the power of the microwave signal (for example, with an operating frequency of 5 GHz), the resistive material sections 4 microstrip lines and the film resistor 2 is converted into thermal power.

Compared with the prototype in the proposed device is increased allowable power dissipation is due to the fact that, firstly, the power of the microwave signal is converted into heat as the resistive material sections 4 microstrip lines, and the film resistor 2; secondly, the width of the layer of resistive material and a film resistor is increased in comparison with the width of the input microstrip line 5, which increases the area of the resistive layer, which is power dissipation; thirdly, the protrusions 8 regulate the distribution of power dissipation along the length of the device, making, for example, power dissipation is more uniform along the length of the device (the adjustment is carried out, for example, by changing the distance between the projections (Fig.1), the width of the area of contact between the protrusions (Fig.2): the smaller the distance between wystup).

Compared with the prototype in the proposed device is increased, the width of the working frequency band, so as, firstly, fillets 7 and projections 8 smoothly change, respectively, the total width of the device and the width of the conductors, almost completely eliminating the nonuniformity of the electric field, causing the reflection of microwave waves in the high frequency operating band of frequencies, the second reflected microwave waves damped resistive material sections of microstrip lines. In addition, changes in the width of the layer of resistive material through the quarter wavelength provide vsekommentarii reflected waves (coming to the input device in antiphase). As a result, provided the agreement (standing wave ratio voltage (VSWR) of less than 1.25) in a wide frequency range (from 1 to 9 GHz (with best agreement for the Central frequency of 5 GHz)).

Compared with the prototype in the proposed device is eliminated the possibility of local overheating in the joints of sections 4 microstrip line (both among themselves and in connection with the input microstrip line 5 and the film resistor 2) because, firstly, these places on the layer of resistive material deposited conductors 6 (constraints is agnosti), secondly, fillets 7 smoothly change the overall width of the device, avoiding the discontinuity of the electric field (in particular, causing local overheating of the local maxima of the electric field), thirdly, the protrusions 8 smoothly change the width of the conductors in order to avoid inhomogeneities in the electric field (in particular, causing local overheating of the local maxima of the electric field).

Compared with the prototype in the proposed device is eliminated the possibility of electrical breakdown in the joints of sections 4 microstrip line (both among themselves and in connection with the input microstrip line 5 and the film resistor 2) because, firstly, fillets 7 smoothly change the overall width of the device, avoiding the discontinuity of the electric field (in particular causing electrical breakdown of local maxima of the electric field), and secondly, the protrusions 8 smoothly change the width of the conductors in order to avoid inhomogeneities in the electric field (in particular, causing local overheating of the local maxima of the electric field).

The advantages of the proposed device should include the fact that the tabs make it easy to change the distribution of receive the jumper between adjoining protrusions; the greater the distance between the projections (Fig.1) or less than the width of the area of contact (Fig. 2), the more devoted to this phase power). You can make the maximum dispersion area, which is located near the heat sink (for example, the side wall of the metal housing).

In addition, the advantages of the proposed device should include the fact that the tabs make it easy to change the distribution of power dissipation in width (transverse axis plots) of the device (for example, by removing all the non-contiguous protrusions or cutting the jumper between adjoining protrusions; the greater the distance between the projections (Fig.1) or less than the width of the area of contact (Fig.2), the more devoted to this part of the plot device power). You can make the maximum dissipation on the part of the plot device, which is located near the heat dissipating radiator.

Also the advantages of the proposed device should include the fact that the proposed device is manufactured in a single technological cycle with the manufacture of microwave integrated circuits, as all resistive areas predlojeno is a, containing dielectric substrate, one side of which is a ground based, and on the other side of the film resistor, coreconnection, resistive and conductive areas, when this film resistor connected at one end to korotkozamknutyh, and the other end to the series-connected resistive and conductive portions, and connected so that they increase in width towards film resistor, characterized in that it contains the input microstrip line connected to series-connected resistive and conductive portions with opposite relative to the film resistor side, resistive parts are made in the form of a quarter-wave microstrip line length and constant throughout the plot width, variable speed from plot to plot, the conductive areas are on the outer edges of the fillet, and on the inner edges of the protrusions of the conductive material.

2. Microstrip load p. 1, characterized in that the fillets are in the form of parts of a circle.

3. Microstrip load under item 1 or 2, characterized in that the projections of adjacent conductive areas come in contact.

 

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FIELD: polyplexers built around pin-diodes.

SUBSTANCE: proposed polyplexer designed for alternate connection of receiver and transmitter to multielement transceiving antenna such as phased array has its pin-diodes connected in series-parallel circuit of transmission line incorporating quarter-wavelength sections for on-off operation in transmit-receive mode without feeding control currents; switching section of transmission line such as that of microstrip feeder line of phased array is connected in composite four-channel circuit where transmitter output is connected through quarter-wavelength matching transformer and common microwave power distribution point to four antenna radiators, respectively, using diode shorted out by compensating inductance coil and series-connected between common point of microwave power distribution and antenna radiator, one diode per radiator; each antenna radiator is connected, in its turn, to respective input of receiver through two quarter-wavelength microstrip sections provided with grounded diodes parallel-connected at boundary of each section, one diode per radiator, two microstrip components such as those in the form of feeder line sections of wave impedance higher by 20 - 30% than that of main feeder line being separated symmetrically with respect to point of connection of each diode to boundary of quarter-wavelength section of two microstrip components.

EFFECT: reduced mass and size, enhanced operating reliability due to simplified multichannel circuit arrangement of device, facilitated wiring of feeder with more than four switching channels.

1 cl, 1 dwg

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