A method of growing a shaped crystals of refractory compounds

 

(57) Abstract:

The invention relates to a crystal growth of a given shape from the melt, in particular crystal refractory compounds, such as sapphire, ruby, allmaturewoman pomegranate, etc. that can be used in instrumentation, electronic and chemical industries. A method of growing a shaped crystals of refractory compounds from the melt at the end shaper carried out by loading the raw material in the crucible, vacuum system to a residual pressure of not more than 1 of 10-5mm RT. Art., annealing in an inert atmosphere at 1550 - 1650°C, re-evacuating the system to a residual pressure of not more than 1 of 10-3mm RT. century, the rise of temperature in an inert atmosphere to melt the feedstock, dive shaper in the melt at 0,45 - 0,60 its height, zapisywania melt capillary system shaper, are formed on the end face of the shaper film of the melt with the angle of inclination of the side of its surfaces 40 and 65° to the longitudinal axis of the crystal, creating a contact of the melt with a seed crystal, heating and melting of the seed, razresevanja and grow crystals at a speed of 0.2 - 0.8 mm/min overheating RA is Le 0,8 - 5 mm/min and the cooling of the grown crystal. The technical result - the increase of the yield on the optical characteristics of crystals. 4 C.p. f-crystals, 1 table.

The present invention relates to the field of growing crystals of a given shape from the melt, in particular crystal refractory compounds, such as sapphire, ruby, yttrium aluminium garnet, etc. that can be used in instrumentation, mechanical engineering, electronic and chemical industries.

The most important parameters of the process of growing crystals are the cost of production and yield of products, which is evaluated according to the quality of the crystals of the requirements. For example, sapphire crystals in the form of plates that are used as glasses hours, the yield is determined (except for dimensions) optical quality of the crystals, namely the absence of large pores and inclusions of a size of more than 1.0 μm, the normalized number and density of pores and inclusions smaller size, absence or allowable number of block boundaries in the workpiece.

The achievement of defined quality parameters of the grown crystals and the cost for profitable

There is a method of crystallization of the thin film of melt from the surface forming device for receiving, for example, sapphire products of a complex profile in the form of rods, tubes, tapes (ed. St. USSR N 762256, MCI 30 In 15/34, Appl. 11.04.78, publ. 30.07.86 year). In a known way in a crucible equipped with a capillary bundle, downloaded the raw material, the crucible was placed in a heating element, then raised the temperature to obtain a melt. When the melt is fed through a capillary forces capillary beam to the shaper. Upon reaching the set temperature mode of growth to the end of the shaper down the seed crystal, the end of which melts upon contact with the melt in the capillary slit shaper. After wetting of the seed crystal with the melt him begin to move vertically upwards. The disadvantage of this method is the lack of data on the optimal parameters of the individual stages of the process of growing crystals. In addition, a large total surface area of the capillaries formed by the rods capillary beam leads to the formation of a large number of large pores and inclusions, which reduces the yield on the optical parameters.

Known is supplied through the capillary system in a forming element, in which, to improve the quality of the crystals between the capillary system and formative elements create a damping layer of the melt, which carry out the control process according to the thickness of the layer that you created (ptent RF N 1131259, MCI 30 In 15/34, Appl. 17.06.83,, publ. 30.01.94 year). However, this method is quite complex in implementation, and obtaining crystals with good optical characteristics is problematic.

Also known is a method of obtaining a shaped crystals from the melt at the end of the former, taken as a prototype (ed. St. 1592414 MKI 30 In 15/34, Appl. 26.11.86,, publ. 15.09.90 g), in order to increase the yield of crystals and reduce their costs provide a crystal is grown at a programmed change of the heating power to melt crumb feedstock, optionally placed on the end face of the shaper, as well as in the optimization of technological parameters of individual stages of the process: annealing, the speed of the crystal pulling, cooling of the crystal, and so on, the Method can melt a load without overheating, to determine the exact terms of seeding, growing crystals of a given shape, which ultimately allowed us to obtain a tube of synthetic sapphire with high output is on optically transparent crystals, in particular, synthetic sapphire, which is required for the clock glasses, optical fibers, etc.

The invention is aimed at increasing the yield on the optical characteristics of crystals and decrease the cost of obtaining them.

According to the invention the task is solved in that a method of growing (shaped crystals from the melt at the end shaper carried out by loading the raw material in the crucible, vacuum system to a residual pressure of not more than 110-5mm RT.art., annealing in an inert atmosphere at a temperature of 1550-1650oC, re-evacuating the system to a residual pressure of not more than 110-3mm RT. century, the rise of temperature in an inert atmosphere to melt the feedstock, dive shaper in the melt at 0,45-0,60 its height, zapisywania melt capillary system shaper, are formed on the end face of the shaper film of the melt with the angle of inclination of the side of its surfaces 40-65oto the longitudinal axis of the crystal, creating a contact of the melt with a seed crystal, heating and melting of the seed, razresevanja and pulling of the crystal at a speed of 0.2-0.8 mm/min in the case of overheating of the melt relative to the temperature of his crystallize is. the shown result is achieved by the fact that during crystal growth of sapphire in the form of plates using a seed crystal with orientation [1010] , which is directed along the longitudinal axis of the crystal with a precision of 5owhen this plane (0001) of the seed feature perpendicular to the horizontal longitudinal axis of the shaper with a precision of 7oand the fact that the crystal growth of sapphire having the form of bodies of rotation, using a seed crystal with orientation [0001]. In addition, this result is achieved in that in the process of growing crystals from the melt surface are isolated from the surrounding atmosphere, maintaining the ratio of the cross-sectional area of the gap to the surface of the melt in the range of 0.15-0,80, and also that the seed set with a possibility of free movement in her moment of contact with the surface of the melt at the end of the shaper in the direction of crystal growth.

Distinctive features of the proposed method are the modes and conditions of annealing, vacuum, provisions shaper, shape of the film surface of the melt, the rate of cultivation and isolation of the crystal, as well as the crystallographic orientation of the seed.

Osushestvit impurity atmosphere chamber, in which the crystal growth, which leads to a decrease in the number and size of gas inclusions (pores) in crystals and increasing the yield on the optical parameters. At the first stage of degassing conduct degassing elements of thermal unit, which is the growth of the crystals, to remove the adsorbed impurities and air. In the second stage, carry out the removal of impurities released into the atmosphere chamber during thermal annealing site in the atmosphere of inert gas (like after washing with an inert gas).

The lower limit of the interval of annealing temperature (1550oC), as well as the vacuum at the first stage of vacuum (not more than 110-5mm RT. Art.) and stage II (not more than 110-3mm RT. Art.) is determined by the need of sufficient obezvozhivanija elements of thermal unit and the atmospheric chamber to remove various impurities, air and products of interaction of the annealing. At a lower temperature annealing and vacuum worse than these values have not been removed impurities and air react with elements of thermal unit, into the melt and reduce the optical characteristics of the obtained crystals and the yield. Annealing at temperatures over 1650oC is impractical, because of rezultaty growing increase due to the increase of energy consumption, i.e., increases the cost of production of crystals.

The former is dipped into the melt by 0.45 to 0.60 its height in order to supply the capillaries, as the experiments showed, the most pure melt at a specified quantitative interval height. During melting of raw materials on the surface of the melt formed slag and the surface layer of the melt enriched gas inclusions. If the shaper immersed in the melt is less than 0.45 its height, above the slag and gases are released through the capillary system shaper in the growing crystal, which negatively affects its optical characteristics, and the yield decreases. When immersed shaper in the melt on the value of more than 0.60 its height is the rapid obliteration (particles of molybdenum, accumulating in the lower part of the melt) capillary shaper in its lower part, the shaper has a small life, and this causes an increase in the cost of growing crystals.

The formation of a film of melt on the end of the shaper with the angle of inclination of the side of its surfaces 40-65 to the longitudinal axis of the crystal allows to obtain crystals, achiev is) and thus increase the yield. When you angle the film of melt is less than 40o. decreases the stability of the growth process, which leads to the appearance of areas with high density of inclusions and the yield of crystals is reduced, and the cost of obtaining them is increasing. The increase in the angle of the film of the melt to the longitudinal axis of the crystal over 65oreduce the sustainability of cultivation (lead crystal or the reduction of its cross section), as well as to increase the density of gaseous inclusions in the crystal and reduce yield.

The speed range of the growing crystal of 0.2-0.8 mm/min was determined experimentally. At a speed of about 0.8 mm/min significantly increased the density of the gas, and foreign inclusions and the yield decreases. The reduction in the rate of growing of less than 0.2 mm/min does not lead to significant improvements in the quality of the crystal, but significantly prolongs the time during the growing process and therefore increases the cost of the process.

Lead crystal is realized by increasing the speed of the cultivation in the range of 0.8-5 mm/min. If the take-off speed of 5 mm/min, the excavated part of the crystal is subjected to a thermal shock can occur blocks and even cracks in resuse the process, its cost, without receiving any benefits in the quality of the crystals.

The melt surface are isolated from the surrounding atmosphere in order for growing crystals to limit contact with the melt (due to natural convection) of atmospheric pollutants camera, which inevitably leads to an increase in the density of foreign inclusions in the crystals. Therefore, when the ratio of the cross-sectional area of the remaining gaps to the surface area of the melt more than 0.80 decreases the yield. The reduction of the specified relation is less than 0.15 does not provide any additional benefits, at the same time, difficulties arise during the process of cultivation because of the possibility of sticking closely spaced insulating melt elements of thermal node of failure and consequently to increase the cost.

Seed set with a possibility of free movement in contact with the surface of the melt at the end of the shaper in the direction of crystal growth. When the usual "hard" mounting the seed for crystallization front passed all kinds of vibrations, in addition, it is likely deformation shaper edges when seeding, cmpletely. The proposed solution allows to avoid these negative effects and to increase the yield of crystals.

For growing crystals of sapphire in the form of plates using a seed crystal with orientation [1010] and guide the latter along the longitudinal axis of the crystal with a precision of 5oand the plane (0001) of the seed feature perpendicular to the horizontal longitudinal axis of the shaper with a precision ofo. Found experimentally crystallographic orientation and the plane used the seed, and the accuracy of its installation and application allow to obtain a high yield of crystals without blocks. Other orientations and planes of the seed, and is outside the specified range of accuracy of its application the yield of crystals without blocks decreases and the cost of obtaining crystals increases.

As the experiments showed, only in this combination of features, which are reflected above, the proposed method improves the quality of the crystals. Failure to comply with the terms of the proposed method and the outside of these intervals does not give the desired result due to the deterioration of the optical characteristics of crystals, reducing yield and increasing sepratley method is implemented as follows. The parameters are within the limits specified above.

In the crucible download the raw materials and installed in the heater. Fix the former, assemble all thermal unit, including set seed with a possibility of free movement vertically in contact with the end face of the shaper. Next, the pressurized chamber of the furnace, vaccum it and serves the voltage on the heater, is heated to the annealing temperature, make the exposure at this temperature, fill the chamber of the furnace with an inert gas such as argon, at low pressure. Continued annealing at the same temperature, then vacuum chamber of the furnace to achieve maximum purity of the atmosphere. After filling the chamber with argon further rise of the temperature on the heater melted feedstock, immerse the shaper in the melt by a specified amount. Next, put the seed before contact with the end face of the shaper and upravlyaut its end. The growth of crystals of a given shape are butt shaper of the film melt with inclined side surfaces at a given speed. At the end of the growth process of the crystal lead crystal is s.

Examples of specific performance

For convenience and reduction statement (due to the large number of proposed operations method) examples of specific performance are given in the form of a table. This table shows the relative yield and relative cost values of the operation parameters of the proposed method. For relative yield (relative cost) adopted the ratio of yield (cost) at the parameter values outside the claimed range for the minimum yield (maximum cost) at the parameter values of the method in the claimed range. Optimal declare the parameter values of the method shown in the first line of the third column of the table.

Relative yield and relative cost for the values of the parameters are outside the claimed range was determined for each parameter separately in a series of 10 experiments while maintaining the values of the other parameters in the optimal range.

The experiments were conducted in the growing processes simultaneously 5 plates section of 5 x 35 mm2and a length of 300 mm for glasses hours, in which, after cutting and machining use the th node as follows: outer diameter of the heater 146 mm, the height of the heater 215 mm, the diameter of the crucible 100 mm, the height of the crucible 65 mm, the weight of the load (the battle of the crystals obtained by the method of Verneuil) tn 76850 g, height shaper 60 mm

The yield was determined by optical characteristics: permissible size of the gas and foreign inclusions and their allowable density for class II, as well as by the absence of block-structure crystals must be besplatnye. The yield on the geometry of the obtained crystals were considered separately and given in the table of values of yield were not included.

These examples show that the compliance of the claimed features of the method significantly enhances the yield on the optical parameters and lowers the cost of obtaining crystals.

In the series of 15 experiments conducted at the facility SSVN-20.800/22-II, which first used the invention of the prototype, and then by the invention, for example, receiving at the same time 5 plates section of 5 x 35 mm2it is shown that the yield in comparison with the prototype increased by 30-40%, while cost of sales decreased by 15-20%.

1. A method of growing a shaped crystals of refractory compounds from the melt at the end formoobrazovateljami raw materials, zapisywanie melt capillary system shaper, warming up the seed and created contact of the melt with her, melting the last, razresevanje and pulling the crystal at the temperature of the melt in the crucible relative to the temperature of crystallization, separation from the melt and cooling the grown crystal, characterized in that the annealing is carried out in an inert atmosphere at 1550 - 1650oC, the degassing is carried out in two stages, before annealing and additionally after annealing to a residual pressure of not more than 1 of 10-5mm RT. senior 1 and 10-3mm RT.article respectively, and a further rise of the temperature to the melting of raw materials are in the atmosphere of inert gas, the former is dipped into the melt by 0.45 to 0.60 its height, is formed on the end face of the shaper film of the melt with the angle of inclination of the side of its surfaces 40 - 65oto the longitudinal axis of the crystal, the last cultivation is carried out at a speed of 0.2 - 0.8 mm/min, and the gap is realized by the increase in the rate of growth in the range of 0.8 - 5 mm/min.

2. The method according to p. 1, characterized in that the crystal growth of sapphire in the form of plates using a seed crystal with orientation [1010] and guide the latter along the longitudinal axis of the crystal with a precision of 5o.

3. The method according to p. 1, characterized in that the crystal growth of sapphire having the form of bodies of revolution, take a seed crystal with orientation [0001].

4. The method according to p. 1, characterized in that the melt surface are isolated from the surrounding atmosphere, maintaining the ratio of the cross-sectional area of the gap to the surface of the melt in the range of 0.15 - 0,80.

5. The method according to p. 1, characterized in that the seed set with a possibility of free movement in contact with the surface of the melt at the end of the shaper in the direction of crystal growth.

 

Same patents:

The invention relates to techniques for growing shaped crystals of refractory oxides for components and products

The invention relates to the field of production of semiconductor materials and can be used to produce silicon in the form of plates floating method

The invention relates to techniques for growing shaped crystals from the melt with variable cross-sectional shape
The invention relates to techniques for growing shaped crystals from the melt with variable cross-sectional shape

The invention relates to a process for the production of single-crystal materials used in various branches of national economy

The invention relates to the turbines, in particular the production of parts for gas turbine engines directional solidification and can be used in the optical industry, semiconductor engineering and chemical technology

The invention relates to crystal growth by pulling from a melt on a seed crystal and can be used in installations for the manufacture shaped polycrystalline and monocrystalline products from various kristallizuetsya materials, metal alloys, semiconductors, insulators

The invention relates to growing the single crystal from the melt of long fibers of refractory materials

The invention relates to a method of obtaining from a melt of crystalline bodies with precisely defined dimensions of the channel and can be used in various fields pretsizionnoi equipment, in particular for the manufacture of monocrystalline capillaries and waveguides

FIELD: devices for continuous grouped growing of the orientated layers of silicon on a carbonic fabric.

SUBSTANCE: the invention is pertaining to the field of growing of polycrystallic layers from a melt of silicon and may be used in production of solar cells (photo-converters) Substance of the invention: the device consist of a crucible for a melt mounted inside a heater, a substrates connected to gears of their relocation and a capillary feeding mechanism. The substrates are made out of a carbonic reticulated fabric, and the capillary feeding mechanism consists of two horizontal sections, located to the left and to the right of the crucible, each of which has a tail swathed by harnesses out of a carbonic thread. The crucible is made with the bottom hollow elongated spout supplied with an independent heater, under the crucible there is a tank for a drain of the crucible residue, the inner surface of which is coated by a layer of a hexagonal boron nitride, and above the crucible a vibrating feeder for feeding the ground silicon is mounted.

EFFECT: the invention ensures growing of polycrystallic layers from a melt of silicon.

1 dwg

FIELD: devices for growing from a melt of polycrystalline layers of silicon used for production of solar sells.

SUBSTANCE: the invention is pertaining to the field of growing from a melt of polycrystalline layers of silicon and may find application in production of solar cells (photoconverters). The substance of the invention: the device includes a crucible for a melt, a heater, a substrate linked with the gear of its relocation and a capillary feeding mechanism. The substrate is made out of a carbon reticular fabric, the heater consists of two sections of heating: a square section, inside which the crucible is mounted, and a right-angled section located above the substrate. At that the cross-section of the heater components is selected so, that the section of heating of the crucible is overheated in respect to the section of heating of the substrate. For a capillary feeding of the melt of silicon from the crucible use harnesses made out of a carbon filament spooled on a tail-end of the feeding mechanism. For replenishment of the level of the melt in the crucible use a vibrofeeder to feed the crushed silicon. The technical result of the invention is an increased productivity of the device and formation of conditions for production of the orientated coarse-crystalline structure of a silicon layer on the substrate naturally open for making of the rear electrical contact.

EFFECT: the invention ensures an increased productivity of the device, production of the orientated coarse-crystalline structures of the silicon layers on the substrates.

1 dwg 1 o

FIELD: electronic industry; production of profiled crystals from semiconductor materials and other materials used in electronic industry.

SUBSTANCE: proposed method consists in growing profiled crystals from melt by drawing the seed holder and imparting rotation to seed holder and to molding agent with capillary zone for delivery of melt located between inner and outer curvilinear edges of working surface in form of spiral; the following relationship is satisfied: dR/dα≥0, where R and α are radius and angle of polar coordinate system with center at point of intersection of plane in which edges of working surface of molding agent and axes of its rotation lie. Molding agent may be so made that its working surface is located at angle relative to plane of its base. Molding agent may be made at gradual increase of molding surface above base. Proposed method may be used for growing crystals from rubin, sapphire, alumoyttrium garnet, composite eutectics refractory oxides, lithium niobate, molybdates of rare-earth metals and other substances of various forms, hollow parts inclusive in form of cone, sphere, rod (cylinder), ellipsoid at section in form of trochoid or any open curve at homogeneous structure.

EFFECT: possibility of obtaining constant thickness of crystal or thickness changing according to definite law.

5 cl, 10 dwg

FIELD: production of shaped crystals of refractory compounds such as leucosapphire, ruby, aluminum-yttrium garnet and other by growing from melt according to Stepanoff method.

SUBSTANCE: method comprises steps of evacuating melting chamber and warming heat zone; adding to melting chamber at least one inert gas; providing temperature of heat zone till melting temperature of initial raw material in crucible while filing capillary system of shaper with melt; flashing seed crystal and growing it on end of shaper; drawing crystal; tearing off crystal and cooling it. During those steps applying to melting chamber mixture of inert gases containing, mainly argon and at least helium; setting in melting chamber pressure of mixture that is less than atmospheric pressure and after growing crystal up to its complete section melting off grown part of crystal just till seed and again realizing growing procedure. Then crystal is finally grown. After cooling ready crystal the last may subjected to annealing outside melting chamber for two stages, at first in reducing carbon-containing gas medium including inert gases and then in vacuum.

EFFECT: possibility for producing high optical quality crystals with improved uniformity of optical properties, less loss of yield, lowered cost price of produced crystals.

8 cl, 2 tbl

FIELD: growing monocrystals of refractory oxides from melts by oriented crystallization; production of sapphire monocrystals corresponding to opto-electronics requirements.

SUBSTANCE: proposed device has vacuum chamber with crucible and molding unit, tungsten heater, shields, rod with seed holder which is provided with crystal raising mechanism mounted outside the chamber, melt make-up system made in form of bin with tube and unit for control of heating and rate of raising the crystal. Device is additionally provided with annealing vacuum chamber mounted above chamber with crucible and molding unit coaxially relative to it and system for synchronization of mass of crystal being grown and consumption of make-up material; annealing vacuum chamber is provided with self-contained heater whose height is equal to or exceeds maximum size of length of crystal obtained; diameter of annealing chamber ranges from 0.6 to 0.9 of diameter of lower chamber; mounted in between chambers is partition with holes for rod with seed holder, crystal being grown and make-up; molding unit is made in form of parallelepiped with parallel through vertical slots which is mounted in crucible at clearance and is secured on crucible walls; height of parallelepiped is equal to 20-30% of crucible height; width of slots is 0.2-0.3 mm at distance between them of 0.2-0.5 mm; in horizontal plane ends of slots are blind. Proposed device makes it possible to eliminate voids lesser than 50 mcm in diameter at obtaining the crystals whose transversal size is lesser than 100 mm at crystallographic orientation of <1010> or <1120>. Power requirements are reduced by 4-6 times. Monocrystals grown with the aid of this device have low internal stresses which is important for further mechanical treatment of crystals.

EFFECT: reduced power requirements; low internal stresses of crystals.

7 cl, 2 dwg

FIELD: growing germanium monocrystals.

SUBSTANCE: germanium monocrystals are grown from melt on seed crystal with the use of molder filled with melt; molder has holes for removal of excessive melt formed during crystallization. First, crystal is enlarged on rotating seed crystal in radial direction till it gets in contact with molder placed in crucible without melt; then, rotation of crystal is discontinued and crystallization is carried out in axial direction by lowering the temperature till complete hardening of melt; molder is provided with holes in its lower part located at equal distance from one another at radius r satisfying the condition r<K/h, where K= 0.2 cm2; h is height of melt, cm; number of holes, 12-18. Molder may be made in form of round, square or rectangular ferrule. Proposed method makes it possible to obtain germanium crystals of universal shape with no defects in structure, free from mechanical stresses and homogeneous in distribution of admixtures.

EFFECT: increased productivity; reduced technological expenses; increased yield of product.

2 cl, 2 dwg, 2 ex

FIELD: chemical industry; methods of growing of the rectangular monocrystals of sapphire.

SUBSTANCE: the invention is pertaining to the technology of growing from melts of the monocrystals of sapphire and may be used at production of the volumetric crystals with the crystallographic orientation along the axis <1010> or <1120>. The device contains the vacuum chamber with the installed in it the crucible, the rectangular shaper, the heater assembled out of the lamellas fixed on the current leads, the screens, the rod with the seed-crystal holder and the systems adjusting the hoisting speed of the seed crystal and power of the heater. The crucible, the generatrix of the lamellas and the deflector have the rectangular form, between the bottom of the crucible and the shaper there is the spacing, the altitude of the walls of the shaper exceeds the altitude of the crucible. The wall of the shaper in their upper part are made slit along the ribs and bent off along the slits in the direction of the walls of the chamber, the shaper rests on the upper edge of walls of the crucible by its slit parts. The technical result of the invention consists in the rise of the output of the single crystals up to 60 % due to reaching of integrity of the geometrical shape of the crystal with the crystallographic orientation along the axis <1010> or <1120> and acceleration of the growing process.

EFFECT: the invention ensures the increased output of the suitable single crystals up to 60 % due to reaching the integrity of the geometrical shape of the crystal with the crystallographic orientation along the axis <1010> or <1120> and acceleration of the growing process.

5 cl, 2 dwg

FIELD: crystal growth.

SUBSTANCE: device comprises vacuum chamber with melting pot and molding unit, wolfram heater, shields, rod with the holder for seed provided with a mechanism for lifting crystal and mounted outside of the chamber, and melt make-up system made of a hopper with tube and system for control of heating and rate of crystal lift. The device is additionally provided with roasting vacuum chamber that is mounted above the chamber with melting pot and molding unit coaxially to it and the system for synchronization of mass of the crystal to be grown and the flow rate of the make-up material. The roasting chamber has autonomous heater whose height is equal or exceed the maximum size of the length of the crystal to be grown. The diameter of the roasting chamber is 0.6-0.9 of the diameter of the bottom chamber. The baffle provided with openings for the rod with seed holder is interposed between the chambers.

EFFECT: enhanced quality of crystal.

6 cl, 2 dwg

FIELD: technological process.

SUBSTANCE: invention pertains to growth of monocrystalline silicon layers from a molten mass, and can be used in making solar cells (photoconverters). The device consists of a crucible for melting, a heater, consisting of two heating sections: a square one, the inside of which is fitted with a crucible, and a rectangular one, put over a substrate, a substrate, linked to its displacement mechanism, capillary feeder, bundles of carbon fibres, wound on the tail of the feeder, and a vibrating feeder for supplying crushed silicon. The substrate used is a carbon foil, covered by pyrographite layers. The capillary feeder has an opening for putting in the substrate, and the rectangular heating section is symmetrical about the substrate and has vertical incisions for letting in the substrate.

EFFECT: increased output of the device due to growth of thin silicon layers at the same time on both surfaces of the substrate, due to reduction of the specific consumption of initial silicon due to that, the substrate does not get soaked in the molten mass.

1 ex, 2 dwg

FIELD: metallurgy, crystal growth.

SUBSTANCE: invention concerns field of receiving profiled crystals of refrectory compounds, for instance, leucosapphire, ruby, yttrium aluminum garnet and others, growth from melt by method of Stepanov. Facility contains pot with installed in it form-builder with vertical capillary channels, at that it is outfitted by nozzle, fixed on bottom end of form-builder, enveloping it with forming of closed cavity, communicating to pot chamber by means of holes, implemented in nozzle. Nozzle can be fixed on bottom end of form-builder as with firm adherence to its side walls, as with formation of open between side walls of nozzle and form-builder. In nozzle chamber which is lower butt end of form-builder can be located filler with ability of passing of melt to the capillary channels. Filler can be implemented in the form of rods, or plates, or wires and located in chamber of nozzle as several layers.

EFFECT: receiving of crystals of higher quality, increasing of product yield and decreasing of cost price of receiving crystals.

11 cl, 4 dwg

Up!