Installation for growing epitaxial semiconductor structures on single crystal substrates

 

(57) Abstract:

Usage: the equipment for manufacture of semiconductor elements techniques. The inventive installation for growing epitaxial semiconductor structures on single crystal substrates includes a vacuum chamber, which houses the Executive body of the manipulator in the form of rotating about its longitudinal axis rod with removable podarkticules, heater, comprising a housing holds the heating element and the heat shield with the cavities in the walls to the coolant. The heater is mounted on the free end of the rotary rod, and removable polictial placed on the heater with a gap relative to the heating element. The heat shield heater with cavities in the walls made in the form of two glasses, covering all sides of the heater with podarkticules and provided with rods, swivel relative to the axis perpendicular to the longitudinal axis of the rod manipulator. The rods are provided with channels for the supply and removal of cooling fluid, which communicates with the cavities in the walls of the cups of thermal screen, in the bottom of the glass, the location is the query result of the invention is to improve the quality of semiconductor compounds by reducing the decomposition of ammonia in a vacuum chamber. 3 Il.

The invention relates to equipment for the production of elements of semiconductor technology and, in particular, is intended for creation of semiconductor compounds of nitrogen with metals group A3.

Known installation for growing epitaxial semiconductor structures on single crystal substrates, comprising a vacuum chamber, which houses the Executive body of the manipulator in the form of mechanism gear. At the end of the working body of the mechanism is placed polictial for securing single-crystal substrates. In the housing wall of the vacuum chamber mounted effusion cell from which the delivery of the components of growth in a vacuum chamber. In effusion cells evaporation of the metals of group A3and solid sources of impurities (Mg, Si). Installation is carried out radiation (infrared) heating the substrate, see "Molecular beam epitaxy and heterostructures," edited by L. Cheung and K. Raft, M.: Mir, 1989, S. 170 (reference copy attached).

Inside the vacuum chamber near its case, there are screens with nitrogen-cooled role of cryogenic pumps that serve to reduce the pressure of the OS is SUP>. Most effectively it is used to create A connection3As. However, with its growing use of new, extremely important for modern semiconductor technology connections A3N from ammonia fraught with considerable difficulties. When carrying out the heating of the heated substrate and other surfaces inside the vacuum chamber: the elements of the manipulator, polictial, the surface of the heater's housing and others On these heated to temperatures above 900oC surfaces is an intensive decomposition of ammonia into hydrogen and nitrogen, which dramatically increases the pressure in the vacuum chamber. This is because high-vacuum turbomolecular pumps used in such units, pumping hydrogen is significantly worse than other gases (the compression ratio of these pumps hydrogen is a thousand times lower than for other gases, for example nitrogen). The increase in pressure in the vacuum chamber leads to the violation of the conditions necessary for growing semiconductor compounds.

Also known installation for growing epitaxial semiconductor structures on single crystal substrates, comprising a vacuum chamber, which houses the Executive body manipulation is wumei camera is also placed another rod, at the end of which is placed a heater; a rod heater is equipped with a mechanism for translational movement of the heater in the direction of the substrate, is fixed in polictial; heater includes a housing, which houses a heating element; a heater provided with a heat shield in the form of a cylindrical ring member with open ends, the walls of which are annular cavity for supplying coolant; see "Installing molecular epitaxy EP 12036; Technical conditions", the Academy of Sciences of the USSR, Leningrad, 1990, 3 sheets, 12 and "Technical description and operating instructions", Leningrad, 1991, page 12.

This solution is taken as the prototype of the present invention.

For the cultivation of compounds A3N nitrogen enters the vacuum chamber in a stream of ammonia. Supply of other components in the vacuum chamber by using effusion cells. In the vacuum chamber are cryogenic pumps.

The presence of a heat shield heater with water cooling system allows to reduce the decomposition of ammonia in a vacuum chamber outside of the substrate. However, due to the fact that most of the elements inside the vacuum chamber proishodit intensive decomposition of ammonia on the surfaces of these elements, heated to high temperatures during operation. As a result of this increases the pressure in the vacuum chamber, which violates the conditions for growing epitaxial semiconductor structure and leads, as a consequence, a sharp deterioration of its quality.

The present invention laid the task of creating such systems for growing epitaxial semiconductor structures on single crystal substrates, which would improve the quality of semiconductor compounds by reducing the decomposition of ammonia in a vacuum chamber.

According to the invention this is achieved due to the fact that the apparatus for growing epitaxial semiconductor structures on single crystal substrates, comprising a vacuum chamber, which houses the Executive body of the manipulator in the form of rotating about its longitudinal axis rod with removable podarkticules, heater, comprising a housing holds the heating element and the heat shield with the cavities in the walls to the coolant heater is installed on the free end of the rotary rod, and removable polictial placed on the body of agrevate Olsen in the form of two glasses, covering all sides of the heater with podarkticules and provided with rods, swivel relative to the axis perpendicular to the longitudinal axis of the rod manipulator, rods provided with channels for the supply and removal of cooling fluid, which communicates with the cavities in the walls of the cups of thermal screen, in the bottom of the glass located on the side of podarkticules made a window containing the substrate from the vacuum chamber.

The applicant has not detected any technical solution that is identical to the claimed invention, which allows, in his opinion, to conclude that according to the invention, the criterion of "novelty."

Implementation characteristics of the invention (in conjunction with evidence contained in the restrictive part of the claims) suggest an important new property (technical effect) of an object, consisting in almost complete insulation elements are heated during operation, relative to the cavity of the vacuum chamber containing ammonia, while ensuring the possibility of maneuvering podarkticules in water and removing it from the vacuum chamber outside of the process of growing the semiconductor structure. That is, the heat shield with the IC on the decomposition of ammonia outside of the substrate in a vacuum chamber. This limit ensures the increase of pressure in the vacuum chamber and is provided with the required quality of the grown semiconductor structures. These considerations allow, according to the applicant, to conclude that under the present technical solutions to the criterion of "inventive step".

The invention is illustrated by drawings, which shows:

in Fig. 1 - General view of the installation in the context;

in Fig. 2 is a kinematic diagram illustrating the operation of the movable elements of the unit, in the situation when the appointment is made or withdrawal of podarkticules from the body of the heating element;

in Fig. 3 is the same as in Fig. 2; rod rotated 90oto bring the installation into a position in which the cultivation of the semiconductor structure.

Installation for growing epitaxial semiconductor structures on single crystal substrates 1 includes a vacuum chamber 2 in which is placed the Executive body of the manipulator in the form of rotating about its longitudinal axis of the rod 3, the removable polictial 4 and the heater, which includes a housing 5 and placed in it the heating element 6. The heater 6 is rigidly soy is a slight gap relative to the heating element 6. In a specific example, the release of podarkticules 4 relative to the housing 5 of the heater is provided with the known plug-type connections of type "mount". The heat shield heater is made in the form of two cups 7 and 8, facing open ends to each other and covering all sides of the heater with the installed podarkticules. In the walls of the Cup 7 has a cavity 9, and walls of glass 8 - cavity 10. Cavity 9 and 10 are used to supply cooling fluid, in this example water. The Cup 7 is rigidly connected with the rod 11, and the glass 8 with the rod 12. The rods 11 and 12 have the capability of rotation about axes perpendicular to the longitudinal axis of the rod 3. Rotation of the rods 11 and 12 with glasses 7 and 8 at the lower ends by using separate and independent from each other of tilting mechanisms of conventional type, sealed relative to the vacuum chamber 2 (in the drawings conventionally not shown). The rod 11 has longitudinal channels 13 and 14, respectively, for supply and drainage of water from the cavity 9 of the Cup 7. In the rod 12 provided with channels 15 and 16 for supply and drainage of water from the cavity 10 of the Cup 8. In the bottom of the glass 7 is a window 17, which tells the substrate 1 with the vacuum chamber 2. In the vacuum chamber 2 size of the tov for the cultivation of compounds of the type A3N - through effusion cell 18. In the vacuum chamber 2 are cryogenic pumps 20 and 21, which represents a capacity in which served liquid nitrogen. The turning rod 3 relative to its longitudinal axis is effected through the mechanism 22.

The device operates as follows.

A substrate 1 made in the specific example of the single crystal Al2O3strengthen polictial 4. Through the vacuum gateway associated with the vacuum chamber 2 (in the drawings, the gateway conventionally not shown) polictial 4 to the substrate 1 is injected with the help of external manipulator (not shown) in the vacuum chamber 2. When the rod 3 is rotated to the position according to Fig.2, and the rods 11 and 12 with glasses 7 and 8 diluted in different directions. Then polictial 4 is placed on the housing 5 of the heater, matching it to the body 5 by means of a connection type "mount"; the rod 3 rotates about the longitudinal axis through the mechanism 22 and is forced into the position shown in Fig.3. Then turn the rods 11 and 12 with glasses 7 and 8 and lead the installation position of Fig.1; however, the cups 7 and 8 cover the heater with podarkticules from all sides. Open only on the air traffic management epitaxial semiconductor structure in the specific example GaN, through a gas input 19 in the vacuum chamber 2 serves ammonia. When the substrate 1 is heated to a predetermined temperature using a heater. From effusion cells 18 in the vacuum chamber 2 serves Ga in the gas phase. On the heated substrate 1, the ammonia is decomposed into nitrogen and hydrogen. Part of the nitrogen reacts with Ga, forming a GaN layer on a monocrystalline substrate of Al2O3. Cryogenic pumps 20 and 21 provide the desired vacuum in the chamber 2 by numerazione on their surface part of the ammonia is not decomposed on the surface of the substrate 1.

For cooling glasses 7 and 8 in their cavity 9 and 10 serves cold water through the channels 13 and 15, and to divert the heated water through the channels 14 and 16, made in the rods 11 and 12, respectively. Thus, the heater and polictial shielded relative to the cavity of the vacuum chamber 2. Thanks to this decomposition of ammonia occurs mainly on the surface of the substrate 1, which significantly reduces the amount of hydrogen and nitrogen in the chamber 2 and, accordingly, the pressure in this chamber.

The mount is made mostly of stainless steel in normal factory conditions. Thanks to its use increases significantly the quality pressurizat is a series of "industrial applicability".

Installation for growing epitaxial semiconductor structures on single crystal substrates, comprising a vacuum chamber, which houses the Executive body of the manipulator in the form of rotating about its longitudinal axis rod with removable podarkticules, heater, comprising a housing holds the heating element and the heat shield with the cavities in the walls for cooling fluid, characterized in that the heater is installed on the free end of the rotary rod, and removable polictial placed on the heater with a gap relative to the heating element, the heat shield heater with cavities in the walls made in the form of two glasses, covering all sides of the heater with podarkticules and provided with rods, swivel relative to the axis perpendicular to the longitudinal axis of the rod manipulator, rods provided with channels for the supply and removal of cooling fluid, which communicates with the cavities in the walls of the cups of thermal screen, in the bottom of the glass located on the side of podarkticules made a window containing the substrate from the vacuum chamber.

 

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