A method of obtaining a thin magnetic films
(57) Abstract:Usage: the invention relates to a technology for thin ( 0.1 micron) magnetic films using the method of ion implantation of magnetic elements in the substrate material and can be used in microelectronics and computer science, in particular for the manufacture of magnetic and magneto-optical storage media. The technical result of the invention consists, first, in the improvement of the magnetic characteristics of the film by reducing the number of radiation defects and, secondly, reduce the time of implantation and cheaper process. The essence of the invention: substrate use terephthalate. Implantation of iron ions in the substrate is performed with a dose of 1016--1017ion/cm2when the flux density of ions 6X1012-1014ion/cm2c. The invention relates to a technology for thin ( 0.1 micron) magnetic films (TDM) using the method of ion implantation of magnetic elements in the substrate material and can be used in microelectronics and computer science, in particular, for the manufacture of magnetic and magneto-optical storage media. Such films are characterized by high mechanical the local method  receive TDM in the semiconductor. The method consists in the fact that in the silicon substrate implanted ions of the magnetic elements with energy E = 10 - 500 Kev; the dose (D), determined from the relation D = n d, where n is the concentration of atoms implanted elements in the material TDM, d set the thickness TMP; flux density of ions (j) lying in the range of 6 to 1012- 6 to 1013ion/cm2C. However, the resulting TDM consist of fine ferromagnetic silicides with low values of magnetization.The known method  obtain ferromagnetic film implantation in solid substrate of fast ions of transition elements of the iron group. To extend the frequency range and improve the magnetic characteristics of the ferromagnetic film as the substrate used, quartz, and irradiate it at densities of ion flux j = 6 to 1012- 9 of 1013ion/cm2with doses of D = 5 1016- 1017ion/cm2. For example, implantation of a substrate of fused quartz on the accelerator ILU-3 ions56Fe+with energy E = 40 Kev, a dose of D = 8 1016ion/cm2when the density of the ion flux j = 6 to 1013ion/cm2with were synthesized TDM with effective saturation magnetization 4000 Gauss.However polupravilnykh mechanical characteristics and the relatively high cost of the material.Now lie more promising are magnetic and magneto-optical medium, in which the substrate using a polymeric material is polymethylmethacrylate (PMMA) [3, 4].A method of obtaining TDM in PMMA . This method is the closest to the claimed and, therefore, selected as a prototype. The method consists in the following. Plane-parallel plate of PMMA with a thickness of 1 mm bombarded in a vacuum chamber of an ion-beam accelerator ILU-3 ions Fe+with energy E = 40 Kev, a dose in excess of 1017ion/cm2and the density of the ion flux j < 2,4 1013ion/cm2C. by ferromagnetic resonance, transmission electron microscopy, Auger spectroscopy was revealed the formation of a ferromagnetic film consisting of fine particles-Fe with cross-sectional dimension of from 5 to 100 nm. The effective saturation magnetization 4Meffranged from 500 to 10,000 Gauss.However, for TDM in PMMA requires a large dose of ion irradiation of Fe+(> 10 ion/cm2) and the low density of the flow of ions, which leads to a significant increase in time of implantation, i.e. the cost of the process, and to increase the number of radiation defects OI the invention, is, first, to improve the magnetic characteristics of the film by reducing the number of radiation defects and, secondly, reduce the time of implantation and the cheapening of the process.In the production method of thin magnetic films in polymers, including the implantation of iron ions in the substrate to solve the task as a substrate used polyethylene terephthalate (PET), and the implantation is performed with a dose of 1016- 1017ion/cm2when the flux density of ions 6 1012- 1014ion/cm2.We experimentally found that the energy is E = 40 Kev minimum dose formation in TDM PET is Dmin= 2 1016ion/cm2that an order of magnitude less than for the synthesis of TMP in PMMA. With increasing implantation dose dependence of the saturation magnetization in the PET has an extreme character with a maximum at D 1017ion/cm2(equal to 4Meff~ 6500 GS at the maximum). At the same time, the maximum effective saturation magnetization for TDM synthesized in PMMA, under the same conditions, can only be achieved if the dose of > 4 1017ion/cm2and equal to 4Meff~ 4500 Gauss, which is 70% lower than for PET.The flux density ionography. On the one hand, the larger j is, the less the exposure time at a given dose. On the other hand, it is known that at high j is the degradation of the polymer. So the high j the density of the ion flow is limited. The temperature of the polymer during implantation significantly depends on the quality of thermal contact with the cartridge-holder. When using the original thin PET film as a substrate thermal contact is quite bad, and we experimentally it was found that the maximum flux density of ions in this case should not exceed 3 to 1013ion/cm2C. While ensuring good thermal contact, for example, by gluing, the flux density of ions can be increased to 1014ion/cm2C.Let's look at specific examples.Example 1. As the substrate used was 3 μm PET film caused by 0.04 μm, the metallic coating. The use of such film was allowed to make a fairly good thermal contact with the sample holder in the irradiation process. Ion implantation of Fe+was performed on ion-beam accelerator ILU-3 at room temperature with energy E = 40 Kev, a dose of D = 1017ion/cm2when the raft ferromagnetic film. The effective saturation magnetization is equal to 4Meff~ 6500 GS, which is approximately three times greater than the values obtained in PMMA at the same implantation dose.Example 2. The original PET film shown in example 1, is bombarded by ions of Fe+with E = 40 Kev, a dose of D = 1017ion/cm2when the value j = 1,2 1013ion/cm2C and the temperature of the substrate, variable in the range from 20 to 150oC. the Obtained ferromagnetic film had an almost constant value of the effective saturation magnetization equal to 6000 Gauss.Example 3. The original PET film shown in example 1, is bombarded by ions of Fe+with E = 40 Kev, a dose of D = 3 1016ion/cm2and j = 2,4 1013ion/cm2c at room temperature of the substrate. The obtained film had a magnitude of the effective saturation magnetization equal to 950 Gauss.Example 4. The original PET film shown in example 1, bombard at room temperature, the substrate with ions of Fe+with E = 40 Kev, j = 2.4 to 1013ion/cm2and with a dose of D > 1017ion/cm2namely, with D = 2.4 to 1017ion/cm2. Effective saturation magnetization of the resulting films was equal to 3200 HS, both for PET and PMMA samples (the conductors// Ed.: C. Y. Petukhov, I. B. Khaibullin, M. M. Zaripov. - A. S. N 1114246 (USSR).2. A method of obtaining a ferromagnetic films on solid substrates// ABT. : A. A. Bukharev, A. C. Kazakov, I. B. Khaibullin, N. R. Yafaev. - A. S. N 1347789 (USSR).3. M. Kh. KREIDER. In the world of science. - 1987. - N 12. - S. 46 - 58.4. Magnetic completely with medium and method for making the same//Inv. Kazufumi. Ogawa. - US Patent N 4751100.5. V. Petukhov, V. Zhikharev, M. Ibragimova, E. Zheglov, V. Bazarov, I. Khaibullin. Ion synthesis of the granular ferromagnetic films in polymethyl-methacrylate. - Sol. St. Comm. - 1996. - V. 97, - N. 5. - P. 361 - 364. (Prototype). A method of obtaining a thin magnetic films, including the implantation of iron ions in the polymer substrate, wherein the substrate using a polyethylene terephthalate, and the implantation of an exercise performed with a dose of 1016-1017ion/cm2when the flux density of ions 61012-1014ion/cm2c.
FIELD: organic semiconductors.
SUBSTANCE: embossing or laminating film has at least one circuit component manufactured by using organic semiconductor technology, for instance one or more organic field-effect transistors; circuit component has several layers including electric functional layers with at least one organic semiconductor layer, at least one insulating layer, and electricity conductive layers. One or more layers of circuit component are made by way of thermal or ultraviolet replication including spatial structuring, part of at least one electric functional layer in spatial structuring region being fully separated.
EFFECT: improved circuit component production process using organic semiconductor technology.
28 cl, 9 dwg
FIELD: physics; semiconductors.
SUBSTANCE: invention relates to film with at least one electrical structural member and to method of manufacturing thereof. The method implies application of laser-cured adhesive compound onto a substrate film according to a specific pattern and/or irradiation according to a specific pattern so as to crystallise the adhesive according to a specific pattern. Onto adhesive, a decal film, which consists of substrate and electrical structural member, is applied. Substrate film is separated from the film body, which consists of base film, adhesive layer and electrical functional layer, so that in the first patterned area the electrical functional layer stays on the base film, and in the second patterned area the electric functional layer stays on the substrate and is separated from the base film together with the substrate.
EFFECT: enhanced method for manufacturing structural members using organic semiconductor technology.
30 cl, 5 dwg
FIELD: process engineering.
SUBSTANCE: invention relates to generation of electron or photon pattern on substrate, application of fluoropolymer to this end, to method of pattern generation and to electron or photon device thus made. Proposed method comprises: formation of film of said electron or photon material on said substrate and application of said fluoropolymer for protection of said electron or photon material in pattern generation.
EFFECT: ease of integration of proposed process with all common TFT architectures.
44 cl, 18 dwg
FIELD: power industry.
SUBSTANCE: invention relates to the photo-electric element consisting of electron-donating and electron-seeking layers, as a part of an electron-seeking layer containing methane fullerene where methane fullerene compounds with the generalised formula , where R = - COOCH3, - Cl, and the electron-donating layer is hydrochloric acid doped polyaniline or methane-sulphonic acid based polyaniline.
EFFECT: increase of overall performance of converters of solar energy into electric and idle voltage.
1 tbl, 4 ex
SUBSTANCE: invention relates to organic electronics, specifically to memory devices based on organic field effect transistors fabricated using photochromic compounds as part of active layer disposed at boundary between layer of semiconductor material and insulator. Invention provides formation and use of photo-switchable and electrically switchable organic field effect transistors, having in their structure a layer of photochromic molecules located on boundary between layer of semiconductor material and an insulator.
EFFECT: technical results achieved in implementation of claimed invention are a simple structure and technology of manufacturing photo-switchable and electrically switchable field effect transistors; possibility of creating multiple discrete states with different threshold voltages; achieving significant differences in currents IDS for different states (up to 10,000 times); providing spectral sensitivity of device: impact of light pulses of different wavelengths converts transistor in different states; enabling use of photo-switchable and electrically switchable FET as multibit memory cell; enabling optical and electrical programming of said memory cells; higher information recording density by implementing multibit mode.
4 cl, 10 dwg