The solution of the chemical copper plating dielectric

 

(57) Abstract:

The invention relates to a chemical magnesiu dielectrics and can be used in automotive, engineering and instrument-making industry and in the production of household appliances. The solution of the chemical copper plating dielectric contains, g/l: copper sulfate 2-5; complexing agents - ammonia 25% aqueous 2-5, hypophosphite sodium 50-100, trisodium phosphate 5-15; phosphonoacetate acid 50-250 and glycol 2-3. Use of the solution allows to reduce the operating temperature of the copper plating to 15-20oC. 1 table.

The invention relates to a chemical magnesiu dielectrics and can be used in automotive, engineering and instrument-making industry and in the production of household appliances.

A known solution of the chemical copper plating dielectrics using hypophosphite as a reducing agent in acidic medium using as ions of copper oxide. The working temperature of the solution 93oC, which limits the possibility of metallization of polymers.

A known solution of the chemical copper plating dielectrics containing copper sulfate, Trilon B, hypophosphite sodium, trisodium phosphate and sulfuric Ki the den for chemical copper plating thermoplastic with heat resistance, within 60 80oC.

The task of the invention is to reduce the operating temperature of the solution chemical copper plating dielectric within 15 - 25oC.

This object is achieved in that the solution containing copper sulfate, complexing agents, hypophosphite sodium, trisodium phosphate and sulfuric acid further comprises a glycol, and as complexing agents and mineral acids, respectively, ammonia and posterolateral acid in the following ratio of components, g/l:

The copper sulfate - 2-5

Ammonia 25% aqueous - 2-5

Hypophosphite sodium - 50-100

Trisodium phosphate - 5 - 15

Phosphonoacetate acid - 50-250

Glycol - 2-3

The presence of glycol in the solution promotes the formation at room temperature, the copper film on the substrate dielectric, and phosphonoacetate acid, as a strong reducing agent, is a source of protons during recovery of ions from ammonium complex copper.

Preparation of the solution lead by serial dilution in solution phosphonoacetic acid, trisodium phosphate, hypophosphite sodium and glycol, copper sulphate and ammonia is introduced into the solution immediately before beginning work in the form of a 0.4 M aqueous solution of eniu optimal solution composition for chemical copper plating plastic type ABS at room temperature (15-25oC).

From the table it follows that when the content in solution orthophosphorous acid of less than 50 g/l of copper film on the substrate is absent (example 7). When processing the substrate with a solution that does not contain a glycol, a film of copper is also missing (example 1).

Increase phosphonoacetic acid than 250 g/l, and more glycol than 3 g/l, it is not economically feasible.

Using plating solutions of examples 2 to 6, on the surface of the dielectric substrate is formed of a dense film of copper with thickness of 0.1 - 0.5 micron.

The effectiveness of the solution chemical copper plating dielectrics is that the solution works with 15-25oC and provides the opportunity metallization of dielectrics with resistance in the range 60-80oC and below, for example plastics ABS, plexiglass, vinyl plastic, paper.

The source of information

1. Salkauskas M Wincalis A. Chemical metallization of plastics. - L.: Chemistry, 1985.

2. Auth.St. N 1280043, class C 23 C 18/40. The solution of the chemical copper plating.

The solution of the chemical copper plating dielectrics containing copper sulfate, complexing agents, hypophosphite sodium, a mineral acid and trisodium phosphate, characterized in that the solution doesit ammonia and posterolateral acid with the following content of components, g/l:

The copper sulfate - 2 - 5

Ammonia water 25% - 2 - 5

Hypophosphite sodium - 50 - 100

Phosphonoacetate acid - 50 - 250

Trisodium phosphate - 5 - 15

Glycol - 2 - 3V

 

Same patents:

FIELD: technological processes.

SUBSTANCE: invention is related to technology for production of metalised woven and nonwoven materials, and may be used for production of catalysts, and also for production of decorative and finishing materials. Method includes previous chemical activation of coated material surface, using as activator glyoxal acid and/or oxalic acid. Then chemical metallisation is carried out, which is realised from solution containing bluestone. Stabiliser used is tetraethylene glycol, and reducer - glyoxal. Sodium hydroxide is used in solution to maintain required acidity.

EFFECT: invention provides for production of metalised dispersed woven and nonwoven materials using simplified technology, with simultaneous cheapening and provision of production safety due to use of proposed ingredients and their certain ratio.

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