The method of producing ingots of silicon in the form of wide plates of different thickness

 

(57) Abstract:

Usage: the invention relates to the field of production of semiconductor materials and can be used to obtain the floating method of semiconductor silicon in the form of a wide plate. The invention is: to improve the profitability and quality of the material offered method allows to get without crucible and device for feeding molten wide silicon plates of different thickness by extrusion of the molten peaks of polycrystalline download rectangular shape with makeup melt, continuous feed load from the bottom up in the melting zone. The heater is offered a high-frequency inductor loop type, located near the top of the boot. 2 Il.

The invention relates to the field of production of semiconductor materials and can be used to produce silicon in the form of plates floating method.

Known methods for producing ingots of silicon by pulling from the melt in the crucible (Choralschola) and during floating-zone melting, including the meltdown download, Tatralandia, endurance and pulling the ingot from the fed melt. PS quite a large surface area can have large benefits at all stages of its production and manufacturing of devices and integrated circuits. These benefits are associated with a significant increase profitability by simplifying processes and devices, increasing their productivity, reducing production costs for electricity and auxiliary materials, as well as by reducing the loss of material when cutting on the stage with the specified characteristics at the stage of manufacture of various electronic equipment.

Known methods for producing ingots of silicon flat shape in the form of thin dendritic tapes and plates with various formers. However, such methods do not allow to obtain a flat material of a sufficiently large width and thickness. This prevents the realization of these benefits; because the width does not exceed 25, and the thickness 1 mm

The closest in technical essence to the present invention is a method and device for its implementation, allowing to grow large ingots of silicon in the form of slabs and plates, pulling on a seed crystal from a molten top of the load when the supply of the melt feed boot upwards (1).

The aim of the invention is to increase the profitability of production and quality Polugaevsky download a rectangular shape, a thickness of not more than 60 mm, and the width not less than 50 mm In these conditions, the supply of the molten pure silicon produced by the continuous feed of the load from the bottom up in the melting zone. This solution does not require the use of crucibles and device for feeding the melt. In the process of crystallization conditions monitoring boundary crystal-melt does not deteriorate, and when the doping from the gas phase doping connection is achieved uniformity in the distribution of impurities along the length of the crystal. The maximum thickness of the workpiece is selected taking into account the possibility of creating a stable area of the melt in the drawing process.

Thermal regime of crystallization, providing the melting downloading, seeding and creating a temperature gradient that provides the pulling of the ingot from the bottom up, establish and maintain with the help of high-frequency inductor, geometrical dimensions, shape and position of which within the working chamber crystallization apparatus determine the optimal shape of the zone of the melt during the pulling of the ingot.

thermal circuit node setup for extrusion ingot of silicon in the form of plates shown in Fig. 1, 2.

Inside an airtight working chamber installation from the wide side of the priming and loading parallel.

The inductor 5 is introduced into the working chamber with its narrow side and is located near the top of the boot. Geometrical dimensions of the working chamber depend on the thickness and length of the load 6 and the length of the pulling crystal 7.

The crystallization process starts with melting the top of the boot. The stability of the melt 8 on the download depends on the surface tension of the melt and on the magnitude of the compressive electromagnetic high frequency field generated by the inductor and depending on its design and location relative to load.

A seed crystal is dipped into the melt survive until slight melting and begin pulling. At the same time moving up the boot order of the recharge zone of the molten pure silicon instead of pulling his number. The process ends with the separation of the obtained ingot from the melt and cooled ingot and download.

Example 1. In the floating-growing silicon ingots in the form of plates receive the ingot width 300 mm, thickness 25 mm and a length of 500 mm

To do this, as the load in the lower holder rod fix the workpiece thickness 45 mm, a width of 330 mm and a length of 280 mm, and the upper holder fix satrak the rum 5 mm create a plot of the melt. In this case, applying the inductor loop type with a length of 330 mm and a width of the inner part 35 mm In the melt is lowered through the upper stem seed and maintain it in this position until the melt, and then start stretching and razresevanje seed to a predetermined thickness 25 mm After pulling plate length 500 mm, gradually reduce the thickness of the plate, increasing the speed of extrusion of 3 mm/min to 15 - 20 mm/min and reducing the power supplied to heat the melt. Then tear off the ingot from the boot. In the process of pulling produce supply load in the zone of the melt at a rate of about 1.5 mm/min

Example 2. In the same apparatus receive the silicon wafer width 300 mm, thickness of 1.5 mm and a length of 500 mm For this purpose, the holder of the lower rod is fixed load in the form of a plate of polycrystalline silicon with a thickness of 20 mm, a width of 330 mm and a length of 60 mm, Then using an inductor with a tube diameter of 5 mm on the side of the loading zone of the melt. In this case, applying the inductor loop tiputini 330 mm and a width of the inner part 22 mm. Produce seeding, endurance and stretching of a thin plate of a given length at a speed of about 20 mm/min. and the rate of rise of billets set about replays in the upper holder rod. The width of the seed of about 300 mm and a length of 45 to 50 mm

The method of producing ingots of silicon in the form of wide plates of different thickness floating crystallization pulling the seed crystal from the molten peaks of polycrystalline load when the supply of the melt by the continuous feed of the load from the bottom up in the melting zone, characterized in that the loading of the use of rectangular shape, of a thickness not exceeding 50 mm, and a width of not less than 50 mm

 

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