Storage media for permanent storage device
(57) Abstract:Usage: in computing, a storage device for storing information in digital and analog forms (together or separately). The invention is: to improve the reliability of information storage base is made of electrically conductive material, a storage layer made of a semiconductor material, on the outer surface of the protrusions corresponding to the stored information, a conductive material made of copper, the semiconductor material is made of InSb, CaAs, Cd3As2. 1 C.p. f-crystals, 1 Il. The invention relates to the field of computer engineering and can be used in storage devices /ZU/ to store information in digital and analog forms /jointly or separately/.Known storage media used for storing information in digital form, consisting of a base punch cards, using guns punched holes according to the content of incoming information 
The drawbacks of such media are punched apertures are limited in size, h is due to mechanical movement of the punch cards; mechanical movement of the punch card reduces the reliability of the memory block, because the lack of any mechanical system that moves the media is the low reliability; it is not possible to record information in analog form.Closest to the proposed media are media for storing analog and discrete data, which contain the base glass printed photosensitive layer of the active layer changes its optical properties when the light exposure and subsequent chemical processing. Information is recorded under the influence of the light flux through the stencil onto the photosensitive layer 
The disadvantage of this media is that during long-term storage of information occurs physico-chemical processes in a photosensitive layer, causing distortion of information in the medium, i.e., over time the reliability of information storage is reduced.The purpose of the invention improve the reliability of information storage.This objective is achieved in that the substrate of the information carrier is made of dielectrophoresis material, such as copper, and the active layer Fyodorova made ledges, the potential difference which corresponds to the contents of the recorded information.On the surface of the media using lithography and chemical etching to create the relief that meets the recorded information in digital and analog form/. Because the state of the surface topography of the medium does not change spontaneously, the recorded information for a long time is saved and can be replayed at any time.The drawing shows the proposed site for the storage media for long-term storage of digital and analog information, which consists of a base 1, for example, copper, which is an active layer 2 made of a semiconductor, for example, InSb, GaAs, Cd3As2etc. On the outer surface 3 of the active layer 2 formed relief 4 in accordance with the content stored information. The differential elevation 4 matches the given differential voltage between the upper and lower surfaces of the projections U and depends on the material of the carrier 3 /active layer/.The proposed media works as follows.On the surface 1 /of Fig. 1/ is applied to the active layer 2, for example, InSb, GaAs, Cd3As2, the surface of which 3 with Out magnetic field Bo, directed parallel to the surface of the carrier, and pass a constant current, as shown in Fig. 1. Under the influence of the Lorentz force, the electrons are moved to the relief surface, charge it and create a layer of semiconductor electric field Hall Ex. In the steady state mode is the equality of electric forces Fl= Fe, i.e.< / BR>Here Vcthe drift velocity of electrons; Cothe speed of light in vacuum.Hence determines the magnitude of the DC field Hall
< / BR>Following the creation of the surface topography, its potential will vary according to the height h, i.e., from Eh1=V1to Eh2=V2and to establish potential differences that reflect the stored information.The advantage of the media relative to the prototype is that there is no mechanical movement of the information carrier, which ensures high reliability. In addition, the proposed storage medium with a high recording density and high resolution. 1. Storage media for permanent storage device containing a base, on which is located a storage layer, otlichnikov material, on the outer surface of the protrusions corresponding to the stored information.2. Media information under item 1, characterized in that the conductive material is made of copper, the semiconductor material is made of InSb, GaAs, Cd3As2.
FIELD: physics; computer engineering.
SUBSTANCE: invention relates to computer engineering and automation and can be used in recording information into the memory field of read-only memory. The technical outcome of the invention is achieved by placing communication elements in a memory field by connecting address buses through communication elements to memory elements of a memory field arranged into blocks, the number of which equals K, and depends on the range D of presenting N bit code combinations, where D≥2N -1. Memory element blocks contain
P1 P2,…,Pk memory elements, where P1, P2…Pk≤D. The location place of a communication element between an address bus and one memory element is determined by the remainder from dividing the numerical value of the code combination by the number of memory elements of the Pi i-th block of memory elements. The number of the memory element in the block corresponds to this remainder and location of the communication element.
EFFECT: cutting on number of communication elements when recording and correcting information, provision for constancy of loading characteristics, increased efficiency of using read-only memory and faster operation thereof.
5 dwg, 4 tbl
FIELD: physics, computer engineering.
SUBSTANCE: invention relates to computer engineering. A single-bit non-volatile memory (NVM) cell comprises a first NVM one-time-write element directly connected to a write bit line; a first write access transistor connecting the first NVM one-time-write element to a ground, wherein the gate of the first write access transistor is connected to a write word line; and a first read access transistor directly connected to the first NVM one-time-write element and directly connected to a read bit line, wherein the gate of the first read access transistor is connected to a read word line.
EFFECT: high throughput of single-bind non-volatile memory cells by splitting bit lines.
18 cl, 9 dwg
FIELD: physics, computer engineering.
SUBSTANCE: invention relates to computer engineering. A method of forming an irreversible state in a single-bit cell, comprising applying programming voltage to a first magnetic tunnel junction (MTJ) of a single-bit cell without applying programming voltage to a second MTJ of the single-bit cell to form an irreversible state in the single-bit cell; and determining the irreversible state by comparing a first value read from the first MTJ and received at the first input of a differential amplifier with a second value read from the second MTJ and received at the second input of the differential amplifier, wherein the first value corresponds to the first voltage of a first bit line connected to the first MTJ, and the second value corresponds to the second voltage of a second bit line connected to the second MTJ.
EFFECT: enabling high-speed programming of a single-bit cell.
34 cl, 7 dwg
FIELD: computer engineering.
SUBSTANCE: invention relates to automation and computer systems and can be used for calculation of logic functions in self-synchronizing programmable logic integrated circuits. Device comprises a unit for calculating a logic function, a unit for calculating a dual logic function, a NOT-OR element, 2n inputs of inverse adjustment, n inputs of variables inversions, an inverse data output, a display output, herewith the units for calculating a logic function and a dual logic function include a group of 2n transistors of inverse conductivity, an additional inverter, the “Zero Volt” bus connection input.
EFFECT: technical result is providing the possibility of initiation of a transient process completion for the device use in self-synchronizing circuits with paraphrase variables and a zero spacer.
1 cl, 2 dwg, 2 tbl
FIELD: radio engineering, communication.
SUBSTANCE: device contains: two overlapping transmitting transistors in the first group, the first group of transistors of disable settings, the second group of transistors of disable settings, the second group of the setting inputs, the second output inverter, the second device output, wherein the second device output is connected to the second output of the output inverter, the input of which is connected to two duplicate transmitting transistor sinks in the first group, the source of the first of them is connected to the source of the second transmitting transistor of the first group of the transmitting transistors, the source of the second of them is connected to the source of the first transmitting transistor of the first group of the transmitting transistors, a gate of the first duplicate transmitting transistor of the first group of the transmitting transistors, a gate of the second duplicate transmitting transistor of the first group is connected to the gate of the second transmitting transistor of the first group of the transmitting transistors, the sources of the first group of transistors of disable settings are connected to the relevant inputs from sixteen setting inputs.
EFFECT: increasing the accuracy of data transmission.
2 dwg, 3 tbl