Storage media for permanent storage device

 

(57) Abstract:

Usage: in computing, a storage device for storing information in digital and analog forms (together or separately). The invention is: to improve the reliability of information storage base is made of electrically conductive material, a storage layer made of a semiconductor material, on the outer surface of the protrusions corresponding to the stored information, a conductive material made of copper, the semiconductor material is made of InSb, CaAs, Cd3As2. 1 C.p. f-crystals, 1 Il.

The invention relates to the field of computer engineering and can be used in storage devices /ZU/ to store information in digital and analog forms /jointly or separately/.

Known storage media used for storing information in digital form, consisting of a base punch cards, using guns punched holes according to the content of incoming information [1]

The drawbacks of such media are punched apertures are limited in size, h is due to mechanical movement of the punch cards; mechanical movement of the punch card reduces the reliability of the memory block, because the lack of any mechanical system that moves the media is the low reliability; it is not possible to record information in analog form.

Closest to the proposed media are media for storing analog and discrete data, which contain the base glass printed photosensitive layer of the active layer changes its optical properties when the light exposure and subsequent chemical processing. Information is recorded under the influence of the light flux through the stencil onto the photosensitive layer [2]

The disadvantage of this media is that during long-term storage of information occurs physico-chemical processes in a photosensitive layer, causing distortion of information in the medium, i.e., over time the reliability of information storage is reduced.

The purpose of the invention improve the reliability of information storage.

This objective is achieved in that the substrate of the information carrier is made of dielectrophoresis material, such as copper, and the active layer Fyodorova made ledges, the potential difference which corresponds to the contents of the recorded information.

On the surface of the media using lithography and chemical etching to create the relief that meets the recorded information in digital and analog form/. Because the state of the surface topography of the medium does not change spontaneously, the recorded information for a long time is saved and can be replayed at any time.

The drawing shows the proposed site for the storage media for long-term storage of digital and analog information, which consists of a base 1, for example, copper, which is an active layer 2 made of a semiconductor, for example, InSb, GaAs, Cd3As2etc. On the outer surface 3 of the active layer 2 formed relief 4 in accordance with the content stored information. The differential elevation 4 matches the given differential voltage between the upper and lower surfaces of the projections U and depends on the material of the carrier 3 /active layer/.

The proposed media works as follows.

On the surface 1 /of Fig. 1/ is applied to the active layer 2, for example, InSb, GaAs, Cd3As2, the surface of which 3 with Out magnetic field Bo, directed parallel to the surface of the carrier, and pass a constant current, as shown in Fig. 1. Under the influence of the Lorentz force, the electrons are moved to the relief surface, charge it and create a layer of semiconductor electric field Hall Ex. In the steady state mode is the equality of electric forces Fl= Fe, i.e.

< / BR>
Here Vcthe drift velocity of electrons; Cothe speed of light in vacuum.

Hence determines the magnitude of the DC field Hall

< / BR>
Following the creation of the surface topography, its potential will vary according to the height h, i.e., from Eh1=V1to Eh2=V2and to establish potential differences that reflect the stored information.

The advantage of the media relative to the prototype is that there is no mechanical movement of the information carrier, which ensures high reliability. In addition, the proposed storage medium with a high recording density and high resolution.

1. Storage media for permanent storage device containing a base, on which is located a storage layer, otlichnikov material, on the outer surface of the protrusions corresponding to the stored information.

2. Media information under item 1, characterized in that the conductive material is made of copper, the semiconductor material is made of InSb, GaAs, Cd3As2.

 

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