(57) Abstract:The invention relates to computing, and in particular to a magnetic storage device with random access. The aim of the invention is to reduce current control with the same size of magnetoresistive memory cells, which will increase the density of information due to the decreasing size of semiconductor control circuits located on the same substrate, reduction of technological difficulties and reducing power consumption. This goal is achieved by the installation of a permanent magnet on the back side of the silicon substrate, creating a uniform magnetic field along the axis of hard magnetization of the magnetoresistive film, the value of which is selected in the range of 0.2-0.5 field anisotropy of magnetic films. 3 Il. The invention relates to computing, and in particular to a magnetic thin film storage devices with random access.Known magnetoresistive memory (see U.S. patent N 4751677, CL G 11 11/15, published. 1988) based on the two-layer magnetic films FeNiCO with solid state control circuits on the same substrate.To the N. is the technology of manufacture and reduces the density of information.Also known (see K. T. M. Ranmouthu et al. 10-35 nanosecond magneto-resistive memories. IEEE Trans. Magn. 1990, v.26, N 5, pp. 2837-2839) the magnetoresistive memory cell, adopted as a prototype of the proposed technical solutions, designed as a multi-layer strips, which in the reading mode is included in the circuit of the bridge. The number of keys on one magnetoresistive memory cell is reduced to 1.5, but the magnitude of the signal read is reduced by half with the same drive currents. Another direction of increasing density of information, and facilitate technology is the reduction of the currents control, which leads to reduction of the sizes of the key requirements for their production and power consumption.The objective of the invention is to increase the density of information by reducing the current control.This technical result is achieved that, in the magnetoresistive memory cell containing a silicon wafer with formed therein a semiconductor control circuits and contact pads on the outer surface, sequentially located on the silicon substrate with the external surface of the first insulating layer with contact holes, the first protective layer to astronamy ends, United switching conductors through the contact holes of the first insulating and protective layers of semiconductors control schemes and consisting of three layers of the high-resistance thin film material, separated by two thin-film layers of magnetoresistive material with the axis of easy magnetization across the multilayer strips, the second insulating layer with contact holes, located on the magnetoresistive storage element conductor and the second protective layers formed on the second insulating layer, on the reverse side of the silicon substrate has a permanent magnet is located so that its uniform magnetic field whose magnitude is selected in the range of 0.2-0.5 field anisotropy of the magnetoresistive film, directed along the longitudinal axis of the multilayer strips.Salient features of the claimed device is a permanent magnet on the back side of the silicon substrate, creating a uniform magnetic field along the multilayer strips in the range of 0.2-0.5 field anisotropy magnetoresistive films.The combination of the above characteristics are provided by the solution of the problem, zamorasantiago storage element, reducing sizes of control circuits, simplification of the manufacturing technologies and the lowering of the power consumption.In Fig. 1 shows the structure of a magnetoresistive memory cell in the context of Fig. 2 a top view of the same cell, spring to the bridge circuit of Fig. 3 theoretical sustainable work magnetoresistive storage element without a permanent magnetic field and with the field along the REL.Magnetoresistive memory contains (Fig. 1) permanent magnet 1, the silicon substrate 2 formed with her semiconductors schemes 3 and the pads 4, the first insulating layer 5, the first protective layer 6, the magnetoresistive storage element 7 in the form of laminated strips with pointed ends, which consists of three layers of titanium 8-10 and two layers of magnetoresistive magnetic films 11 and 12. The sharp ends of the strips are connected to communication conductors 13 with the contact pads 4 and between themselves. On top of the magnetoresistive storage element 7 and the communication conductors 13 are sequentially second insulating layer 14, conductive layer 15 and the second protective layer 16. When reading magnetoresistive storage element 17 th element, while the layered strips 19 and 20 reference magnetoresistive elements, which contains permanent information, such as "0". On top of the layered strips 17-20 are conductors 21 and 22.The device operates as follows.When the permanent magnet is not, in the absence of current through the magnetoresistive memory element (strip 17 and the conductor 21) the magnetization in the two magnetic films directed antiparallel to each other, but the direction depends on the recorded information. In the recording mode in the strip 17 is fed pulsed touch current desired polarity, and the conductor 21 a pulse of the same polarity to "0" and "1". Touch current creates a magnetic field acting on each of the magnetic tape, but in the opposite direction. These magnetic fields depending on the previously recorded information will either be pressed magnetization in the film to the axis of easy magnetization (ALN) when a match is recorded and the recorded information, or reject them from an if there is a mismatch. The current through the conductor creates a magnetic field along the axis of difficult magnetization (REL), which rejects the magnetization from an. The current values are selected in such a manner that one field nedostate Inusa strip 18 and the two support strips 19 and 20, which are written "0". In the bridge circuit is supplied touch current in conductor 21 a current pulse with a polarity corresponding to "0". When the strip 17 is "0", the deviation of the magnetization in the strip 17 does not occur and the signal read not; if the strip 17 is "1", will be the deviation of the magnetization to the REL, which will lead to the change of the resistance strip and a signal will appear reading.The introduction of the permanent magnet will lead to permanent reversal of the magnetization in both films in the direction created by this permanent magnet magnetic field. This leads to a decrease in the values of touch and conduction currents. Calculations show (Fig. 3) the strong dependence of sustainability (ESD) from the constant external field. When a constant field is less than 0,2 field anisotropy of the magnetoresistive film, its influence on the magnitude of the currents control is virtually absent, with the value of the field is greater than 0,5 field anisotropy ESD missing due soon coming of magnetization reversal films. The curves 1 shows the recording area (a) read (b) of the magnetoresistive storage element in the absence of a constant external field, and the crooked shall antolino: at constant currents control the introduction of a constant field along the REL increases the signal read up to a maximum value, i.e. it is as if the increase in current control.Thus, with the same size of the magnetoresistive storage element is reduced currents control, which leads to an increase in the density of information, reduction of technological difficulties and lower power consumption. Magnetoresistive memory containing silicon wafer with formed therein a semiconductor control circuits and contact pads on the outer surface, sequentially located on the silicon substrate on the outer surface of the first insulating layer with contact holes, the first protective layer with contact holes, the magnetoresistive storage element made in the form of multi-layer strips with pointed ends connected switching conductors through the contact holes of the first insulating and protective layers with semiconductor control circuits, and consisting of three layers of the high-resistance thin film material, separated by two thin-film layers of magnetoresistive material with the axis of easy magnetization across the multilayer strips, the second insulating layer with contact holes, Ronnie on the second protective layer, characterized in that the reverse side of the silicon substrate has a permanent magnet with a uniform magnetic field directed along the longitudinal axis of laminated strips of magnetoresistive storage element size of 0.2 to 0.5 field anisotropy magnetoresistive films.
FIELD: technology for magnetization reversal of magnetic layer with planar magnetization.
SUBSTANCE: external magnetic field is applied to magnetic layer in such a way, that magnetization vector performs precessions around this external magnetic field. Effect from external magnetic field is stopped until magnetization orientation coincides with direction of external magnetic field. Magnetization reversal is finalized as a result of fading precession of magnetization around de-magnetizing layer and field of magnetic anisotropy of subject magnetic layer.
EFFECT: accelerated process of magnetization reversal, possible use in device for magnetization reversal of magnetic carrier, magnetic recording system and in memorizing device on magnetic carrier.
5 cl, 5 dwg
FIELD: improved multi-bit magnetic memorizing device with arbitrary selection and methods for functioning and manufacture of such a device.
SUBSTANCE: magnetic memory includes one or more paired cells, each one of which has multilayer magnetic structure. Structure contains magnetic-changeable ferromagnetic layer, ferromagnetic basic layer, having non-changeable magnetization state, and corresponding separating layer which divides ferromagnetic layers. Memory cells are ordered in such a way, that effective remaining magnetization of each cell is not parallel to cell axis which is parallel to its long side. Methods describe functioning process of such a device.
EFFECT: increased data recording density, reduced energy consumption and simplified manufacturing process of memorizing device.
3 cl, 30 dwg
SUBSTANCE: invention refers to sphere of semiconductor nanotechnology and can be used for sensitive producing of thin and ultrathin semiconductor films and dielectrics in micro- and optoelectronics, in technologies of computer memory element formation. In memory device with dielectric layer based on dielectric films containing semiconductor base, dielectric layer, conductor layer and current-conducting electrodes, the dielectric layer consists of the first film of a wide-band dielectric spread on the surface of the semiconductor base, a film of the narrow-band dielectric and the second film of the wide-band dielectric. There is also a method of producing of the memory device offered.
EFFECT: increase of operation speed, reliability and creation of the structure with controllable characteristics of capture and storage of charge information, increase of its volume and density.
13 cl, 6 dwg
SUBSTANCE: method of producing polymer nanocomposites in form of thin films for superdense information recording involves producing a precursor consisting of polyvinyl alcohol, water and a mixture of water-soluble salts of ferric and ferrous iron, followed by treatment with at least one water-soluble dialdehyde at pH 0-3 in the presence of an acid as an acidifying agent, obtaining a thin film on a dielectric nonmagnetic substrate depositing the precursor on a substrate rotating on a centrifuge to form a gel film, treating the obtained gel film with an alkali, the alkali being added in an amount allows complete alkaline hydrolysis of the mixture of iron salts to form a mixture of magnetite or maghemite. The obtained gel film is treated with the alkali in ammonia vapour which is formed from aqueous ammonia solution (NH4OH) or hydrazine hydrate (N2H4ĚH2O) for 5.0-15.0 hours.
EFFECT: reduced particle size dispersion of magnetite and maghemite nanoparticles, obtaining a nanocomposite with a uniform structure, the obtained structure can be used as storage medium for superdense magnetic information recording.
2 dwg, 1 ex
SUBSTANCE: magnetoelectric memory comprises a magnetic element, having two directions of stable equilibrium of its magnetisation, wherein said directions are not opposite to each other; an piezoelectric or electrostrictive substrate which is mechanically linked to said magnetic element; and at least a first and a second electrode, configured to apply an electric field to the piezoelectric or electrostrictive substrate such that said substrate acts on said magnetic element with non-isotropic mechanical stress which causes transition of the magnetisation state of said magnetic element due to magnetostrictive coupling.
EFFECT: eliminating the energy barrier between two stable states during transition.
19 cl, 23 dwg
SUBSTANCE: structure contains thin film metal ferromagnetic layers, each of them is separated from the adjacent layer by a nonmagnetic dielectric layer. All the thin film metal ferromagnetic layers are divided to multiple electrically insulated areas, their dimensions are below one eighth of the length of the electromagnetic wave in the layer of the nonmagnetic dielectric.
EFFECT: increased activity of the film magnetic structure, ie its ability to change its HF effective magnetic permeability under the action of an external control magnetic field.
3 cl, 5 dwg