A method of obtaining a photosensitive epitaxial layers doped solid solutions of the type a*b*996
(57) Abstract:Usage: in the electronics industry to obtain a semiconductor thin film photosensitive elements, namely the technology of production of single-crystal epitaxial layers doped solid solutions of the type a4B6on insulating single crystal substrates of barium fluoride. The essence of the invention: a method of obtaining a photosensitive epitaxial layers doped solid solutions of the type A4B6includes evaporation of the material at the temperature of the evaporator 508 2oC and its deposition on single-crystal substrate made of barium fluoride, at a temperature 4572oC in close spaced sublimation technique volume in a vacuum. For evaporation to take the material composition (Pb1-xSnxTe1-y+Sey)1-z(InTe)zwhere 0,29 less than/equal to x is less than equal to 0.31 in, 0,24 less than/equal to y less than/equal 0,26, 0,012 less than/equal to z less than/equal to 0.016, 10-4less than/equal to less than/equal to 10-3. 1 Il., table 1. The invention relates to a process for the production of single-crystal epitaxial layers doped solid solutions of the type a4B6on insulating single crystal substrates from ftory otechestvenny elements, operating at room temperature in the wavelength range of 7-8,5 ám.A method of obtaining a photosensitive epitaxial layers of solid solutions A4B6in particular Pb1-xSnxTe (x=0,17), consisting of evaporation of the above material with subsequent condensation on the chips of barium fluoride. Epitaxial layers had a photosensitivity at a temperature of T=77 K up to wavelength = 10 µm 
A disadvantage of this known method of producing a photosensitive epitaxial layers absence of photosensitivity at room temperature.As a prototype the selected method of obtaining epitaxial layers of solid solutions A4B6in particular bSxSe1-xthat is photosensitive at room temperature in the wavelength range 1-3,5 μm  In this method, epitaxial layers obtained in close spaced sublimation technique volume in vacuum by evaporation of materials with different content of lead sulfide with subsequent condensation on the substrate of barium fluoride.The disadvantages of this method of obtaining a photosensitive epitaxial layers absence of photosensitivity at room tentatively fact, for evaporation to take the material composition (Pb1-xSnxTe1-y+Sey)1-z(InTe)zwhere 0,29 x 0,31, 0,24 0,26 Y, 0,012 Z IS 0.017,
The comparison of the proposed solutions from known solutions in this field of technology is not allowed to reveal in them the features distinguishing the claimed technical solution to the prototype that allows to conclude that the criterion of "substantial differences".The technical result is achieved due to the combined action of all essential features.The essence of the proposed method consists in the following. On the insulating substrate of barium fluoride by hot wall in close spaced sublimation technique the volume of the grown epitaxial layers of compositions (Pb1-xSnxTe1-y+Sey)1-z(InTe)zwhere 0,29 x 0,31, 0,24 0,26 Y, 0,012 Z 0,017, 10-410-3. having photosensitivity at room temperature in the wavelength range of 7-8,5 μm. The temperature of the steam source was 508 2oC, the temperature of the substrate 457 2oC. the Time of growing the epitaxial layer is not less than 10 min and depends on the need to obtain a layer of a certain thickness.Examples. Grown epitaxial layers of the materials of the source pair (N1-xSnxTethe e with an accuracy of 0.005 V/W and wavelength with an accuracy of 0.05 μm, at which there is maximum photosensitivity shown in the table below.The drawing shows a typical spectral dependence of the photoconductivity at room temperature for experiment # 7.Thus, the use in a method of hot wall as evaporated material (Pb1-xSnxTe1-y+Sey)1-z(InTe)zwhere 0,29 x 0,31, 0,24 0,26 Y, 0,012 Z 0,017, 10-410-3allows to obtain epitaxial layers, photosensitive at room temperature in the wavelength range of 7-8,5 μm. A method of obtaining a photosensitive epitaxial layers doped solid solutions of the type A4B6that includes the evaporation of the material at the temperature of the evaporator (508+2)oC and its deposition on single-crystal insulating substrate made of barium fluoride, at a temperature of (457+2)oC in close spaced sublimation technique volume in a vacuum, characterized in that for use evaporation material composition
(Pb1-xSnxTe1-y+)1-z(InTe)z< / BR>where 0,29 x 0.31;
0,24 at 0,26;
0,012 z 0,017;
FIELD: semiconductor technology; production of microelectronic devices on the basis of substrates manufactured out of III-V groups chemical element nitride boules.
SUBSTANCE: the invention is pertaining to production of microelectronic devices on the basis of substrates manufactured out of III-V groups chemical element nitride boules and may be used in semiconductor engineering. Substance of the invention: the boule of III-V groups chemical element nitride may be manufactured by growing of the material of III-V groups the chemical element nitride on the corresponding crystal seed out of the same material of nitride of the chemical element of III-V of group by epitaxy from the vapor phase at the speed of the growth exceeding 20 micrometers per hour. The boule has the quality suitable for manufacture of microelectronic devices, its diameter makes more than 1 centimeter, the length exceeds 1 millimeter, defects density on the boule upper surface is less than 107 defects·cm-2.
EFFECT: the invention ensures manufacture of the microelectronic devices of good quality and above indicated parameters.
102 cl, 9 dwg
FIELD: non-organic chemistry, namely triple compound of manganese-alloyed arsenide of silicon and zinc arranged on monocrystalline silicon substrate, possibly in spintronics devices for injection of electrons with predetermined spin state.
SUBSTANCE: electronic spin is used in spintronics devices as active member for storing and transmitting information, for forming integrated and functional micro-circuits, designing new magneto-optical instruments. Ferromagnetic semiconductor hetero-structure containing zinc, silicon, arsenic and manganese and being triple compound of zinc and silicon arsenide alloyed with manganese in quantity 1 - 6 mass % is synthesized on substrate of monocrystalline silicon and has formula ZnSiAs2 : Mn/Si. Such hetero-structure is produced by deposition of film of manganese and diarsenide of zinc onto silicon substrate and further heat treatment of it.
EFFECT: possibility for producing perspective product for wide usage due to combining semiconductor and ferromagnetic properties of hetero-structure with Curie temperature significantly exceeding 20°C and due to its compatibility with silicon technique.
3 ex, 2 dwg
FIELD: electronic engineering; materials for miscellaneous semiconductor devices using gallium arsenide epitaxial layers.
SUBSTANCE: intermetallic compounds chosen from group incorporating tin arsenide SnAs, palladium antimonide PdSb, manganese polyantimonide Mn2Sb, nickel stannate Ni3Sn2, nickel aluminate Ni2Al3, nickel germanate Ni2Ge, and cobalt germanate Co2Ge are used as materials of substrates for growing gallium arsenide epitaxial layers.
EFFECT: enhanced structural heterogeneity of gallium arsenide layers being grown.
SUBSTANCE: invention relates to vacuum technology and the technology of making carbon nanotubes, such as carbon nanotubes at ends of probes, which are used in probe microscopy for precision scanning. The method of making probes with carbon nanotubes is realised by depositing carbon films with nanotubes through magnetron sputtering in a vacuum at direct current of 100-140 mA using a carbon target with a nanotube growth catalyst. Work pieces of the probes are put into a vacuum installation. A carbon film with nanotubes is then sputtered in a residual atmosphere of inert gas.
EFFECT: invention allows for obtaining probes with carbon nanotubes, lying perpendicular the surface of the probe, in required amounts without using explosive substances and complex devices.
SUBSTANCE: invention can be used in manufacturing organic light-emitting diodes, liquid-crystal displays, plasma display panel, thin-film solar cell and other electronic and semi-conductor devices. Claimed is element, including target of ionic dispersion, where said target includes processed MoO2 plate of high purity. Method of such plate manufacturing includes isostatic pressing of component consisting of more than 99% of stoichiometric MoO2 powder into workpiece, sintering of said workpiece under conditions of supporting more than 99% of MoO2 stoichiometry and formation of plate which includes more than 99% of stoichiometric MoO2. In other version of said plate manufacturing component, consisting of powder, which contains more than 99% of stoichiometric MoO2, is processed under conditions of hot pressing with formation of plate. Method of thin film manufacturing includes stages of sputtering of plate, which contains more than 99% of stoichiometric MoO2, removal of MoO2 molecules from plate and application of MoO2 molecules on substrate. Also claimed is MoO2 powder and method of said plate sputtering with application of magnetron sputtering, pulse laser sputtering, ionic-beam sputtering, triode sputtering and their combination.
EFFECT: invention allows to increase work of output of electron of ionic sputtering target material in organic light-emitting diodes.
16 cl, 5 ex
SUBSTANCE: in method for growing of silicon-germanium heterostructures by method of molecular-beam epitaxy of specified structures due to silicon and germanium evaporation from separate crucible molecular sources on the basis of electronic-beam evaporators, silicon evaporation is done in automatic crucible mode from silicon melt in solid silicon shell, and germanium is evaporated from germanium melt in silicon insert, which represents a previously spent hollow residue, produced as a result of silicon evaporation in automatic crucible mode, and arranged in crucible cavity of cooled case of crucible unit of electron-beam evaporator used to develop molecular flow of germanium. At the same time process of epitaxy is controlled with account of germanium deposition speed selection, determined from given dependence.
EFFECT: increased stability and expansion of assortment of generated high-quality silicon-germanium heterostructures as a result of improved control of molecular-beam epitaxy of heterostructures due to accurate control of silicon and germanium deposition mode in the optimal range of speed values, reduction of concentration of uncontrolled admixtures in heterostructures produced by proposed method, and reduction of resource expenditures for preparation of process equipment.
2 cl, 3 dwg
SUBSTANCE: invention relates to the field of nanotechnologies and may be used to form nanostructures from evaporated microdrop by exposure to acoustic fields. Complex for formation of nanostructures comprises a nanostructures shaper, an optical microscope, a data display facility and information processing and complex control facility. The nanostructures shaper comprises a foundation and a source of shaping action, at the same time the foundation is formed as piezoelectric with the possibility to apply initial substrate on its surface, and the source of nanostructure-shaping action is represented by surface acoustic waves (SAW), besides, to develop a SAW line, a pair of interdigital transducers (IT) is located on the piezoelectric foundation with the possibility to excite the acoustic field between them, and the shaper is installed in the object area of the optical microscope, at the same time the axis of the microscope sighting is aligned relative to the foundation at the angle φ, besides, the complex also includes a generator of high-frequency oscillations and a wideband amplifier connected to it and to IT.
EFFECT: provision of universality as regards a class of objects exposed to nanostructuring.
12 cl, 1 dwg, 1 tbl
SUBSTANCE: invention relates to the field of nanotechnologies and may be used to make ordered nanostructures, used in micro- and nanoelectronics, optics, nanophotonics, biology and medicine. The proposed method may be used to manufacture single-layer and multilayer nanostructures, also the ones containing layers of different composition, and also two-dimensional, three-dimensional ordered structures of various materials. According to the method, the substrate and the initial substrate, containing nanoparticles, are arranged to form a space between them. The substrate is sprayed in the specified space in the form of a cloud of drops, every of which contains at least one nanoparticles. Creation of a substrate in the form of a sprayed cloud of drops is done by means of ultrasound exposure, when the source of ultrasound effect is located relative to the substrate with the possibility to arrange a sprayed cloud of drops in the specified space. Control of motion in the specified space and drops deposition onto the substrate is carried out through their exposure to external electric and/or magnetic fields.
EFFECT: wider class of materials, which could be used to form ordered nanostructures, higher accuracy of nanoobjects reproduction, stability of nanostructures formation process in one technological space.
FIELD: power engineering.
SUBSTANCE: films and layers of tellurium with single-crystal structure are produced on crystal faces by means of tellurium conversion into a monatomic steam and growth of single-structure specimens from it, at the same time the process of deposition is carried out in atmosphere of hydrogen at PH2=1.8 atm, temperature of initial tellurium T2=600°C and temperature of substrate zone T1=400°C.
EFFECT: production of films and layers of tellurium of single-crystal structure at orienting substrates.
SUBSTANCE: vacuum sputtering plant comprises a resistive source of an evaporated material connected to a power supply unit, and facing with the first side towards the substrate, on which a semiconductor structure is generated, and with the second one - to a receiver of charged particles connected to a negative terminal of a source of accelerating voltage, to a positive terminal of which voltage is connected. The receiver of charged particles may be arranged in the form of a plate of a refractory metal.
EFFECT: higher stabilisation of an evaporation speed, reproducibility of sputtered material layers by thickness and higher quality of manufactured structures.
4 cl, 1 dwg