A method of obtaining a photosensitive epitaxial layers doped solid solutions of the type a*b*996

 

(57) Abstract:

Usage: in the electronics industry to obtain a semiconductor thin film photosensitive elements, namely the technology of production of single-crystal epitaxial layers doped solid solutions of the type a4B6on insulating single crystal substrates of barium fluoride. The essence of the invention: a method of obtaining a photosensitive epitaxial layers doped solid solutions of the type A4B6includes evaporation of the material at the temperature of the evaporator 508 2oC and its deposition on single-crystal substrate made of barium fluoride, at a temperature 4572oC in close spaced sublimation technique volume in a vacuum. For evaporation to take the material composition (Pb1-xSnxTe1-y+Sey)1-z(InTe)zwhere 0,29 less than/equal to x is less than equal to 0.31 in, 0,24 less than/equal to y less than/equal 0,26, 0,012 less than/equal to z less than/equal to 0.016, 10-4less than/equal to less than/equal to 10-3. 1 Il., table 1.

The invention relates to a process for the production of single-crystal epitaxial layers doped solid solutions of the type a4B6on insulating single crystal substrates from ftory otechestvenny elements, operating at room temperature in the wavelength range of 7-8,5 ám.

A method of obtaining a photosensitive epitaxial layers of solid solutions A4B6in particular Pb1-xSnxTe (x=0,17), consisting of evaporation of the above material with subsequent condensation on the chips of barium fluoride. Epitaxial layers had a photosensitivity at a temperature of T=77 K up to wavelength = 10 µm [1]

A disadvantage of this known method of producing a photosensitive epitaxial layers absence of photosensitivity at room temperature.

As a prototype the selected method of obtaining epitaxial layers of solid solutions A4B6in particular bSxSe1-xthat is photosensitive at room temperature in the wavelength range 1-3,5 μm [2] In this method, epitaxial layers obtained in close spaced sublimation technique volume in vacuum by evaporation of materials with different content of lead sulfide with subsequent condensation on the substrate of barium fluoride.

The disadvantages of this method of obtaining a photosensitive epitaxial layers absence of photosensitivity at room tentatively fact, for evaporation to take the material composition (Pb1-xSnxTe1-y+Sey)1-z(InTe)zwhere 0,29 x 0,31, 0,24 0,26 Y, 0,012 Z IS 0.017,

The comparison of the proposed solutions from known solutions in this field of technology is not allowed to reveal in them the features distinguishing the claimed technical solution to the prototype that allows to conclude that the criterion of "substantial differences".

The technical result is achieved due to the combined action of all essential features.

The essence of the proposed method consists in the following. On the insulating substrate of barium fluoride by hot wall in close spaced sublimation technique the volume of the grown epitaxial layers of compositions (Pb1-xSnxTe1-y+Sey)1-z(InTe)zwhere 0,29 x 0,31, 0,24 0,26 Y, 0,012 Z 0,017, 10-410-3. having photosensitivity at room temperature in the wavelength range of 7-8,5 μm. The temperature of the steam source was 508 2oC, the temperature of the substrate 457 2oC. the Time of growing the epitaxial layer is not less than 10 min and depends on the need to obtain a layer of a certain thickness.

Examples. Grown epitaxial layers of the materials of the source pair (N1-xSnxTethe e with an accuracy of 0.005 V/W and wavelength with an accuracy of 0.05 μm, at which there is maximum photosensitivity shown in the table below.

The drawing shows a typical spectral dependence of the photoconductivity at room temperature for experiment # 7.

Thus, the use in a method of hot wall as evaporated material (Pb1-xSnxTe1-y+Sey)1-z(InTe)zwhere 0,29 x 0,31, 0,24 0,26 Y, 0,012 Z 0,017, 10-410-3allows to obtain epitaxial layers, photosensitive at room temperature in the wavelength range of 7-8,5 μm.

A method of obtaining a photosensitive epitaxial layers doped solid solutions of the type A4B6that includes the evaporation of the material at the temperature of the evaporator (508+2)oC and its deposition on single-crystal insulating substrate made of barium fluoride, at a temperature of (457+2)oC in close spaced sublimation technique volume in a vacuum, characterized in that for use evaporation material composition

(Pb1-xSnxTe1-y+)1-z(InTe)z< / BR>
where 0,29 x 0.31;

0,24 at 0,26;

0,012 z 0,017;

10-410-3

 

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