The method of obtaining heteroepitaxial structures in sb/ga as
(57) Abstract:Usage: the invention can be used in the manufacture of integrated circuits and optoelectronics devices. The inventive method comprises growing on a semiconductor substrate of GaAS buffer GaAS layer and the subsequent epitaxy layer lnSb 3 stage solid-phase epitaxy of amorphous layer deposited at room temperature, low temperature and high temperature epitaxy. The invention relates to the technology of semiconductor devices, in particular to a method of epitaxial growing of semiconductor layers by molecular beam epitaxy.The semiconductor epitaxial structure of indium antimonide are widely used for high-speed integrated circuits and optoelectronics devices, as InSb has high electron mobility, is a direct bandgap semiconductor.The most promising is the use of heteroepitaxial layers of InSb grown on politology substrates of a wide gap of gallium arsenide, because in this case excluded the leakage current through the substrate and there is a possibility to carry out the illumination of sitecustomize.so known methods of epitaxial growing of semiconductor compounds AND3IN5by the MBE method (1).However, due to significant misalignment of permanent gratings growing epitaxial layer and the substrate layer there is a high density of structural defects: of mist dislocations and twins.Closest to the invention is a process comprising growing on a semiconductor substrate Gs GaAs buffer layer, and growing the epitaxial layer of InSb two-stage low temperature at 300oAnd the growth rate of the layer of 0.1 μm/h and the high-temperature stage (2).But due to the large mismatch of permanent gratings film of indium antimonide and substrate of gallium arsenide in the InSb film there is a high density of dislocations and twins. While the twins play a major role in the reduction of electrical characteristics in semiconductors.The aim of the invention is the elimination of structural defects-doubles and an increase in the rate of growth of epitaxial layers.This goal is achieved by the fact that after growing the buffer layer is conducted additionally, the deposition of amorphous InSb layer thickness of 5-10 nm at room temperature and solid-phase epitaxy, low temperature stage grow what korostil growth layer 2 μm/hour.The deposition of InSb layer on the bandwagon GaAs at room temperature, leads to the formation of an amorphous layer. When the temperature is crystallization (solid phase epitaxy). The process of crystallization is at the mutual orienting influence of the neighbouring make areas of small size, so the probability of formation of twins is sharply reduced. However, if you spend recrystallization of a thick layer (more than 20-50 nm) is formed epitaxial layer with a high density of structural defects and poor surface morphology, which is probably due to the reduction of the orienting influence of the substrate on the upper LUT.At the same time, heat a thin (10-15 nm) amorphous film to high (400°C) temperatures leads to the disintegration of continuous monocrystalline film, as in the case of pseudomorphs growth, on separate Islands. Therefore, after the stages of solid-phase epitaxy, which occurs at much lower temperatures (200oC) than the collapse of the film on the Islands, conduct low-temperature stage rearing recrystallized layer to a thickness at which the tension in the film is completely responsorium (40-50 nm) due to more complete introduction disloc the global Islands and, as a consequence, the occurrence of twins in their subsequent coalescence.This method of growing heteroepitaxial layers of InSb/ GaAs implemented as follows.Growing heteroepitaxial structures of InSb/GaAs carried out in the plant molecular beam epitaxy. After chemical treatment of the substrate is of gallium arsenide is placed in the chamber MBE, where it is subjected to annealing in the flow of arsenic at a temperature of 600-650oC for 30 minutesAfter annealing grown GaAs buffer layer at a temperature of 650oWith a growth rate of 1 μm/hour for 30 minutes and Then the temperature of the substrate was lowered to room temperature (20-40oC) precipitated at this temperature the InSb layer thickness of 10-15 nm, heat the substrate together with the InSb layer to a temperature of 300oFrom where tverdofaznaya epitaxy, conduct low-temperature epitaxy of InSb layer thickness of 40-50 nm at T 300oWith a speed of 0.1 μm/hour, heat the structure to a temperature of 400oWith, and then lead a high-temperature growth at the rate of 2 μm/hour.Thus, using the proposed method of obtaining heteroepitaxial structures of InSb/GaAs provides in comparison with existing methods sleduushii eliminates structural defects-double.2. In addition, the improved structure of the InSb film at the initial stage of epitaxy allows you to double the speed of its growth and to reduce the process time by 1.5 times. The method of obtaining heteroepitaxial structures of InSb/GaAs, including growing on a semiconductor substrate of GaAs-GaAs buffer layer, and growing the epitaxial layer of InSb two-stage low-temperature phase at a temperature of 300oAnd the growth rate of the layer of 0.1 μm/h and the high-temperature phase, characterized in that, in order to eliminate the defects of the patterns of doubles and increase the speed of growth of epitaxial layers, after growing the buffer layer is conducted additionally, the deposition of amorphous InSb layer thickness of 5 to 10 nm at room temperature and solid-phase epitaxy, low temperature stage of the grown epitaxial layer thickness of 40 to 50 mm, and high-temperature stage is carried out at 400oWith a growth rate layer 2 μm/H.
FIELD: semiconductor technology; production of microelectronic devices on the basis of substrates manufactured out of III-V groups chemical element nitride boules.
SUBSTANCE: the invention is pertaining to production of microelectronic devices on the basis of substrates manufactured out of III-V groups chemical element nitride boules and may be used in semiconductor engineering. Substance of the invention: the boule of III-V groups chemical element nitride may be manufactured by growing of the material of III-V groups the chemical element nitride on the corresponding crystal seed out of the same material of nitride of the chemical element of III-V of group by epitaxy from the vapor phase at the speed of the growth exceeding 20 micrometers per hour. The boule has the quality suitable for manufacture of microelectronic devices, its diameter makes more than 1 centimeter, the length exceeds 1 millimeter, defects density on the boule upper surface is less than 107 defects·cm-2.
EFFECT: the invention ensures manufacture of the microelectronic devices of good quality and above indicated parameters.
102 cl, 9 dwg
FIELD: non-organic chemistry, namely triple compound of manganese-alloyed arsenide of silicon and zinc arranged on monocrystalline silicon substrate, possibly in spintronics devices for injection of electrons with predetermined spin state.
SUBSTANCE: electronic spin is used in spintronics devices as active member for storing and transmitting information, for forming integrated and functional micro-circuits, designing new magneto-optical instruments. Ferromagnetic semiconductor hetero-structure containing zinc, silicon, arsenic and manganese and being triple compound of zinc and silicon arsenide alloyed with manganese in quantity 1 - 6 mass % is synthesized on substrate of monocrystalline silicon and has formula ZnSiAs2 : Mn/Si. Such hetero-structure is produced by deposition of film of manganese and diarsenide of zinc onto silicon substrate and further heat treatment of it.
EFFECT: possibility for producing perspective product for wide usage due to combining semiconductor and ferromagnetic properties of hetero-structure with Curie temperature significantly exceeding 20°C and due to its compatibility with silicon technique.
3 ex, 2 dwg
FIELD: electronic engineering; materials for miscellaneous semiconductor devices using gallium arsenide epitaxial layers.
SUBSTANCE: intermetallic compounds chosen from group incorporating tin arsenide SnAs, palladium antimonide PdSb, manganese polyantimonide Mn2Sb, nickel stannate Ni3Sn2, nickel aluminate Ni2Al3, nickel germanate Ni2Ge, and cobalt germanate Co2Ge are used as materials of substrates for growing gallium arsenide epitaxial layers.
EFFECT: enhanced structural heterogeneity of gallium arsenide layers being grown.
SUBSTANCE: invention relates to vacuum technology and the technology of making carbon nanotubes, such as carbon nanotubes at ends of probes, which are used in probe microscopy for precision scanning. The method of making probes with carbon nanotubes is realised by depositing carbon films with nanotubes through magnetron sputtering in a vacuum at direct current of 100-140 mA using a carbon target with a nanotube growth catalyst. Work pieces of the probes are put into a vacuum installation. A carbon film with nanotubes is then sputtered in a residual atmosphere of inert gas.
EFFECT: invention allows for obtaining probes with carbon nanotubes, lying perpendicular the surface of the probe, in required amounts without using explosive substances and complex devices.
SUBSTANCE: invention can be used in manufacturing organic light-emitting diodes, liquid-crystal displays, plasma display panel, thin-film solar cell and other electronic and semi-conductor devices. Claimed is element, including target of ionic dispersion, where said target includes processed MoO2 plate of high purity. Method of such plate manufacturing includes isostatic pressing of component consisting of more than 99% of stoichiometric MoO2 powder into workpiece, sintering of said workpiece under conditions of supporting more than 99% of MoO2 stoichiometry and formation of plate which includes more than 99% of stoichiometric MoO2. In other version of said plate manufacturing component, consisting of powder, which contains more than 99% of stoichiometric MoO2, is processed under conditions of hot pressing with formation of plate. Method of thin film manufacturing includes stages of sputtering of plate, which contains more than 99% of stoichiometric MoO2, removal of MoO2 molecules from plate and application of MoO2 molecules on substrate. Also claimed is MoO2 powder and method of said plate sputtering with application of magnetron sputtering, pulse laser sputtering, ionic-beam sputtering, triode sputtering and their combination.
EFFECT: invention allows to increase work of output of electron of ionic sputtering target material in organic light-emitting diodes.
16 cl, 5 ex
SUBSTANCE: in method for growing of silicon-germanium heterostructures by method of molecular-beam epitaxy of specified structures due to silicon and germanium evaporation from separate crucible molecular sources on the basis of electronic-beam evaporators, silicon evaporation is done in automatic crucible mode from silicon melt in solid silicon shell, and germanium is evaporated from germanium melt in silicon insert, which represents a previously spent hollow residue, produced as a result of silicon evaporation in automatic crucible mode, and arranged in crucible cavity of cooled case of crucible unit of electron-beam evaporator used to develop molecular flow of germanium. At the same time process of epitaxy is controlled with account of germanium deposition speed selection, determined from given dependence.
EFFECT: increased stability and expansion of assortment of generated high-quality silicon-germanium heterostructures as a result of improved control of molecular-beam epitaxy of heterostructures due to accurate control of silicon and germanium deposition mode in the optimal range of speed values, reduction of concentration of uncontrolled admixtures in heterostructures produced by proposed method, and reduction of resource expenditures for preparation of process equipment.
2 cl, 3 dwg
SUBSTANCE: invention relates to the field of nanotechnologies and may be used to form nanostructures from evaporated microdrop by exposure to acoustic fields. Complex for formation of nanostructures comprises a nanostructures shaper, an optical microscope, a data display facility and information processing and complex control facility. The nanostructures shaper comprises a foundation and a source of shaping action, at the same time the foundation is formed as piezoelectric with the possibility to apply initial substrate on its surface, and the source of nanostructure-shaping action is represented by surface acoustic waves (SAW), besides, to develop a SAW line, a pair of interdigital transducers (IT) is located on the piezoelectric foundation with the possibility to excite the acoustic field between them, and the shaper is installed in the object area of the optical microscope, at the same time the axis of the microscope sighting is aligned relative to the foundation at the angle φ, besides, the complex also includes a generator of high-frequency oscillations and a wideband amplifier connected to it and to IT.
EFFECT: provision of universality as regards a class of objects exposed to nanostructuring.
12 cl, 1 dwg, 1 tbl
SUBSTANCE: invention relates to the field of nanotechnologies and may be used to make ordered nanostructures, used in micro- and nanoelectronics, optics, nanophotonics, biology and medicine. The proposed method may be used to manufacture single-layer and multilayer nanostructures, also the ones containing layers of different composition, and also two-dimensional, three-dimensional ordered structures of various materials. According to the method, the substrate and the initial substrate, containing nanoparticles, are arranged to form a space between them. The substrate is sprayed in the specified space in the form of a cloud of drops, every of which contains at least one nanoparticles. Creation of a substrate in the form of a sprayed cloud of drops is done by means of ultrasound exposure, when the source of ultrasound effect is located relative to the substrate with the possibility to arrange a sprayed cloud of drops in the specified space. Control of motion in the specified space and drops deposition onto the substrate is carried out through their exposure to external electric and/or magnetic fields.
EFFECT: wider class of materials, which could be used to form ordered nanostructures, higher accuracy of nanoobjects reproduction, stability of nanostructures formation process in one technological space.
FIELD: power engineering.
SUBSTANCE: films and layers of tellurium with single-crystal structure are produced on crystal faces by means of tellurium conversion into a monatomic steam and growth of single-structure specimens from it, at the same time the process of deposition is carried out in atmosphere of hydrogen at PH2=1.8 atm, temperature of initial tellurium T2=600°C and temperature of substrate zone T1=400°C.
EFFECT: production of films and layers of tellurium of single-crystal structure at orienting substrates.
SUBSTANCE: vacuum sputtering plant comprises a resistive source of an evaporated material connected to a power supply unit, and facing with the first side towards the substrate, on which a semiconductor structure is generated, and with the second one - to a receiver of charged particles connected to a negative terminal of a source of accelerating voltage, to a positive terminal of which voltage is connected. The receiver of charged particles may be arranged in the form of a plate of a refractory metal.
EFFECT: higher stabilisation of an evaporation speed, reproducibility of sputtered material layers by thickness and higher quality of manufactured structures.
4 cl, 1 dwg