The method of obtaining heteroepitaxial structures in sb/ga as


(57) Abstract:

Usage: the invention can be used in the manufacture of integrated circuits and optoelectronics devices. The inventive method comprises growing on a semiconductor substrate of GaAS buffer GaAS layer and the subsequent epitaxy layer lnSb 3 stage solid-phase epitaxy of amorphous layer deposited at room temperature, low temperature and high temperature epitaxy.

The invention relates to the technology of semiconductor devices, in particular to a method of epitaxial growing of semiconductor layers by molecular beam epitaxy.

The semiconductor epitaxial structure of indium antimonide are widely used for high-speed integrated circuits and optoelectronics devices, as InSb has high electron mobility, is a direct bandgap semiconductor.

The most promising is the use of heteroepitaxial layers of InSb grown on politology substrates of a wide gap of gallium arsenide, because in this case excluded the leakage current through the substrate and there is a possibility to carry out the illumination of known methods of epitaxial growing of semiconductor compounds AND3IN5by the MBE method (1).

However, due to significant misalignment of permanent gratings growing epitaxial layer and the substrate layer there is a high density of structural defects: of mist dislocations and twins.

Closest to the invention is a process comprising growing on a semiconductor substrate Gs GaAs buffer layer, and growing the epitaxial layer of InSb two-stage low temperature at 300oAnd the growth rate of the layer of 0.1 μm/h and the high-temperature stage (2).

But due to the large mismatch of permanent gratings film of indium antimonide and substrate of gallium arsenide in the InSb film there is a high density of dislocations and twins. While the twins play a major role in the reduction of electrical characteristics in semiconductors.

The aim of the invention is the elimination of structural defects-doubles and an increase in the rate of growth of epitaxial layers.

This goal is achieved by the fact that after growing the buffer layer is conducted additionally, the deposition of amorphous InSb layer thickness of 5-10 nm at room temperature and solid-phase epitaxy, low temperature stage grow what korostil growth layer 2 μm/hour.

The deposition of InSb layer on the bandwagon GaAs at room temperature, leads to the formation of an amorphous layer. When the temperature is crystallization (solid phase epitaxy). The process of crystallization is at the mutual orienting influence of the neighbouring make areas of small size, so the probability of formation of twins is sharply reduced. However, if you spend recrystallization of a thick layer (more than 20-50 nm) is formed epitaxial layer with a high density of structural defects and poor surface morphology, which is probably due to the reduction of the orienting influence of the substrate on the upper LUT.

At the same time, heat a thin (10-15 nm) amorphous film to high (400°C) temperatures leads to the disintegration of continuous monocrystalline film, as in the case of pseudomorphs growth, on separate Islands. Therefore, after the stages of solid-phase epitaxy, which occurs at much lower temperatures (200oC) than the collapse of the film on the Islands, conduct low-temperature stage rearing recrystallized layer to a thickness at which the tension in the film is completely responsorium (40-50 nm) due to more complete introduction disloc the global Islands and, as a consequence, the occurrence of twins in their subsequent coalescence.

This method of growing heteroepitaxial layers of InSb/ GaAs implemented as follows.

Growing heteroepitaxial structures of InSb/GaAs carried out in the plant molecular beam epitaxy. After chemical treatment of the substrate is of gallium arsenide is placed in the chamber MBE, where it is subjected to annealing in the flow of arsenic at a temperature of 600-650oC for 30 minutes

After annealing grown GaAs buffer layer at a temperature of 650oWith a growth rate of 1 μm/hour for 30 minutes and Then the temperature of the substrate was lowered to room temperature (20-40oC) precipitated at this temperature the InSb layer thickness of 10-15 nm, heat the substrate together with the InSb layer to a temperature of 300oFrom where tverdofaznaya epitaxy, conduct low-temperature epitaxy of InSb layer thickness of 40-50 nm at T 300oWith a speed of 0.1 μm/hour, heat the structure to a temperature of 400oWith, and then lead a high-temperature growth at the rate of 2 μm/hour.

Thus, using the proposed method of obtaining heteroepitaxial structures of InSb/GaAs provides in comparison with existing methods sleduushii eliminates structural defects-double.

2. In addition, the improved structure of the InSb film at the initial stage of epitaxy allows you to double the speed of its growth and to reduce the process time by 1.5 times.

The method of obtaining heteroepitaxial structures of InSb/GaAs, including growing on a semiconductor substrate of GaAs-GaAs buffer layer, and growing the epitaxial layer of InSb two-stage low-temperature phase at a temperature of 300oAnd the growth rate of the layer of 0.1 μm/h and the high-temperature phase, characterized in that, in order to eliminate the defects of the patterns of doubles and increase the speed of growth of epitaxial layers, after growing the buffer layer is conducted additionally, the deposition of amorphous InSb layer thickness of 5 to 10 nm at room temperature and solid-phase epitaxy, low temperature stage of the grown epitaxial layer thickness of 40 to 50 mm, and high-temperature stage is carried out at 400oWith a growth rate layer 2 μm/H.


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