A generator of electrical oscillations of sound frequencies
(57) Abstract:The invention relates to semiconductor devices, particularly to generators, controlled by an electric field, and can be used in electronics, automation and information technology. The inventive generator of electrical oscillations of sound frequencies contains connected in series to the current source, a load resistance and a self-oscillating environment. Self-oscillating environment made of compensated manganese silicon p-type conductivity with a resistivity = (2,1 3,7)103Omsm. 2 Il., table 1. The invention relates to semiconductor devices, particularly to generators, controlled by an electric field, and can be used in electronics, automation and information technology.Known generator of sound frequencies based on the schemes of self-excitation and conversion of electrical oscillations 
The disadvantages of this generator are the complexity of the electrical circuits and large power requirement.Known semiconductor generator spontaneous oscillations of relaxation form with a frequency of 10-105Hz, managed electricity is current, which is E 103In/seeClosest to the invention is a generator of electrical oscillations of sound frequencies that contain connected in series to the current source, a load resistance and a self-oscillating environment on the basis of silicon, offset by manganese p-type conductivity  In such a generator when electric fields E 600 V/cm at the temperature of liquid nitrogen (T=77 K) are excited injection self-oscillations of the current low frequency 2x x10-310 Hz.The disadvantages of this generator is the inability to obtain current oscillation with a frequency greater than 10 Hz and a high threshold field excitation of these oscillations.The aim of the invention is to increase the oscillation frequency of the current and the decrease of the threshold of electric field excitation of these oscillations.The objective is achieved by the fact that the generator of electrical oscillations of sound frequencies that contain connected in series to the current source, a load resistance and a self-oscillating environment on the basis of silicon, offset by manganese p-type conductivity, self-oscillating medium completed with a resistivity =(2,1-3,7) 103Ω, seeThe proposed generator to is in a constant electric field exceeds a certain threshold value. Performing a self-oscillating environment of crystals offset by manganese silicon p-type conductivity with a resistivity =(2,1-3,7) 103Ohm cm allows to reduce the threshold field Epvibration excitation current of audio frequency up to 16 to 36 V/cm and to increase the oscillation frequency in the range of 2.4 kHz.In Fig. 1 presents a functional diagram of the proposed generator of Fig. 2 the dependence of the amplitude of the current oscillation Jkand the oscillation frequency fkfrom the electric field E > Fn.The generator includes a metal casing 1. Self-oscillating medium in the form of crystal 2 through the dielectric substrate 3 is attached to the wall of the housing 1. Ohmic contacts are made by electrochemical deposition of Nickel, connected to pins 4 and 5. Conclusion 4 through a variable load resistance 6 (Rn) connects to the positive pole of the power supply with adjustable voltage in the range 0-24 Century, Output 5 is connected to the negative pole of the power source. The output AC signal of the oscillation current is removed from the load resistance 6. Self-oscillating environment as crystal 2 is made of a compensated manganese silicon is Argentum was carried out by diffusion alloying manganese industrial grade silicon KDB-10 (TU-48-4-295-74) in the temperature range 1020-1030aboutC for 2 h from the gas phase in a special quartz ampoules evacuated to 10-4mm RT.article.The generator works as follows.On the crystal 2 through the load resistance 6 (Rn) from the power supply adjustable voltage 0-24 Century When the electric field in the oscillatory environment reaches values greater than the threshold E< Fpin the chain of self-oscillations are excited current of audio frequency and sine wave forms, which are removed with the load resistance 6. The amplitude of the output signal can be linearly controlled by varying the magnitude of the load resistance 6 in the range of 103-104/Om.The table shows the values of the threshold field Epand the threshold frequency fpdepending on the specific resistance of the oscillatory environment at room temperature.From the analysis results shown in the table, it follows that the optimal values of resistivity of Si crystals < Mn > to perform self-oscillating environment, in which the threshold field Epmust be less than 50 V/cm, is (2,1-3,7) 103Ω, seeThe reduction of the threshold field and the increasing frequency Kohler> The proposed generator self-oscillations of the current audio frequency excited because of the existence in crystals Si < Mn > the so-called recombination waves (PB). As you know, in semiconductors containing deep levels of asymmetric capture cross section for charge carriers can exist in PB at room temperature in the dark. The existence of PB associated with an uneven distribution of carriers along the sample and with a deep level. When electric field is greater than the threshold in the crystal, due to the deep level, mainly exciting charge carriers of one type, there are quasi-neutral fluctuations in the concentration of carriers and on the pattern of spread of a longitudinal wave electric field, i.e., PB. In the crystal are generated current self-oscillations with an amplitude of up to tens of μa and a frequency of a few kHz. This process occurs at room temperature and in the dark, because the crystal is not heated and there is no need refrigerant. As can be seen from the table, the proposed generator minimum value of Ep= 16 V/cm, which is almost 40 times smaller than the prototype, and the minimum value of fp=1,85 kHz, which is more than two orders of magnitude greater than that of the prototype.Thus, the proposed generator during operation does not require special cooling, which helps to reduce additional costs and simplify device generator. In addition, the reduction of the threshold field to Ep< 50 V/cm allows to use small-sized power sources, and this increases the service life and the service life of the generator. A GENERATOR of ELECTRICAL OSCILLATIONS of SOUND FREQUENCIES that contain connected in series to the current source, a load resistance and a self-oscillating environment on the basis of silicon, offset by manganese p-type conductivity, wherein, to increase the frequency of current oscillations and reduce the threshold electric field excitation of these oscillations, oscillatory medium completed with a resistivity of
FIELD: computer engineering and integrated electronics; integrated logic gates of very large-scale integrated circuits.
SUBSTANCE: newly introduced in integrated logic gate that has semi-insulating GaAs substrate, first input metal bus, first AlGaAs region of second polarity of conductivity disposed under the latter to form common Schottky barrier junction, first inherent-conductivity AlGaAs spacer region disposed under the latter, first GaAs region of inherent-conductivity channel disposed under the latter, second AlGaAs region of second polarity of conductivity, second AlGaAs spacer region of inherent conductivity, second input metal bus, output region of second polarity of conductivity, output metal bus, power metal bus, zero-potential metal bus, and isolating dielectric regions are inherent-conductivity AlGaAs tunnel-barrier region, InGaAs region of inherent-conductivity channel, AlGaAs region of second inherent-conductivity barrier, L-section power region of second polarity of conductivity, and Г-section zero-potential region of second polarity of conductivity; first GaAs region of inherent-conductivity channel and InGaAs region of inherent-conductivity channel are disposed in relatively vertical position and separated by AlGaAs region of inherent-conductivity tunnel barrier; output region of second polarity of conductivity is ┘-shaped and ┘-section region.
EFFECT: enhanced efficiency of using chip area, enhanced speed and reduced power requirement for integrated logic gate switching.
1 cl, 3 dwg
FIELD: computer science and integral electronics, in particular - engineering of VLSI integral logical elements.
SUBSTANCE: integral logical element contains semi-insulated GaAs substrate, first input metallic bus, first AlGaAs area of second conductivity type, positioned above aforementioned bus and forming Schottky transition together with it, below it first AlGaAs area of native conductivity spacer is positioned, below it, first GaAs area of native conductivity channel is positioned, second AlGaAs area of second conductivity type, second AlGaAs area of native conductivity spacer, second input metallic bus, output area of second conductivity type, output metallic bus, zero potential metallic bus, metallic power bus, areas of separating dielectric. Integral logical element additionally contains AlGaAs area of native conductivity tunnel barrier, InGaAs area of native conductivity channel, AlGaAs area of second conductivity barrier, zero potential area of second conductivity type with transverse cross-section in form of symbol L, while first GaAs area of native conductivity channel and InGaAs area of native conductivity channel have vertical mutual position and are divided by AlGaAs area of native conductivity tunnel barrier, output area of second conductivity type is L-shaped and has L-shaped cross-section.
EFFECT: decreased efficiency of crystal area usage, increased speed of operation and decreased energy consumed by switching integral logical element.
FIELD: power semiconductor microelectronics.
SUBSTANCE: newly introduced in central part of semiconductor structure that has substrate, semiconductor material with depleted area in its central part enclosed by depleted area in peripheral part of structure, and relevant current-conducting contacts are recessed components of reverse polarity of conductivity with spherical depleted area whose electric field strength is higher than that of depleted areas in gap between recessed components and in peripheral part of structure.
EFFECT: improved power characteristics, enhanced resistance to pulse overcurrents.
7 cl, 1 dwg
SUBSTANCE: invention relates to design and technology of manufacturing semiconductor integrated circuits (IC) and can be used in digital, analogue and memory units in microelectronics. The semiconductor IC has a high-resistance monocrystalline silicon layer grown in form of a hollow cylinder in which there are regions with different conduction type, which form bipolar transistors, resistors and capacitors. On the outer surface of the high-resistance monocrystalline silicon layer there are emitter and base contacts adjacent to corresponding regions of corresponding transistors connected to resistors and capacitors by conductive paths formed on the surface of a dielectric placed on the outer surface of the high-resistance monocrystalline silicon layer, and on the inner surface of the high-resistance monocrystalline silicon layer there is a collector contact in form of a hollow cylinder adjacent to the collector regions of the transistors or the adjacent silicon layer.
EFFECT: higher degree of integration of the IC, reduced feature size of the element, lower level of inter-electrode connections, reduction of power consumption by one switching, increased reliability.
3 cl, 1 dwg
SUBSTANCE: semiconductor structure of the logical element AND-NOT comprising the first and second logical transistors, the first and second injecting transistors and a substrate is made as nanosized with a stepped profile and comprises four collectors, four bases and at least four emitters on the substrate of the first type of conductivity.
EFFECT: reduced consumed power and increased efficiency.
SUBSTANCE: in the integral logical AND-NOT element based on a layered three dimensional nanostructure (the element containing the first and the second logical transistors, the first and the second injecting transistors and a substrate) the logical structure is designed to be nanosized with a stepped profile.
EFFECT: increased response speed and reduced power consumption.
SUBSTANCE: multifunctional microwave monolithic integrated circuit board based on a multilayer semiconductor structure combines functions of several monolithic integrated circuit boards and comprises field-effect Schottky transistors and quasivertical Schottky barrier diodes with high values of boundary frequencies, which are integrated at the same chip and used as active and non-linear elements. Active areas of the field-effect transistors and basic areas of the quasivertical diodes are placed in different epitaxial layers with a low-ohmic contact layer placed between them and ohmic source and drain contacts of the transistors and ohmic cathodic contacts of the diodes are attached to it.
EFFECT: increased degree of integration for the microwave multifunctional integrated circuit board, reduced weight and dimensions for receiving and transmitting modules of antenna arrays, reduced losses related to signals passage between the schemes of functional units, increased boundary frequencies for the Schottky barrier diodes.
SUBSTANCE: in a semiconductor device a diode area and IGBT area are formed at the same semiconductor substrate. The diode area includes a multitude of anode layers with the first type of conductivity open at the surface of the semiconductor substrate and separated from each other. The IGBT area includes a multitude of contact layers of the body with the first type of conductivity open at the surface of the semiconductor substrate and separated from each other. An anode layer includes at least one or more first anode layers. The first anode layer is formed close to the IGBT area at least, and the square area in each of the first anode layers in the direction of the semiconductor substrate plane is more than the square area in each contact layer of the body in direct vicinity from the diode area in the direction of the semiconductor substrate plane.
EFFECT: invention prevents direct voltage growth in the diode area and increased heat losses.
2 cl, 5 dwg
FIELD: process engineering.
SUBSTANCE: invention relates to microelectronics, particularly, to production of solid-state devices by evaporation of metal coating on the substrate back surface. Claimed process consists in that the substrate is flexed in reverse direction before evaporation of metal coating. It differs from known processes in that said coating is evaporated on substrate back surface through stencil with through holes shaped and sized to crystals. Jumpers between said holes in stencil are comparable with the width of division webs made between crystals on substrate face surface.
EFFECT: reduced residual thermomechanical strains at said boundary.
FIELD: manufacturing technology.
SUBSTANCE: invention relates to production of integrated microcircuits in part of interposer forming for 3D assembly of several chips in single micro-system and process of its production. Invention is aimed at reducing effect of temperature gradients and associated mechanical stresses arising in body of interposer during operation of integrated microelectronic system. For this purpose, in body of interposer around through holes (TSV) filled with conducting material to create electric connection of metallized electric wiring working side with metallized layout of interposer reverse side formed holes, one of topological dimensions considerably smaller than minimum feature size TSV.
EFFECT: formed holes for reducing effect of temperature gradients are filled with material with heat conductivity higher than that of silicon, for compensation of mechanical stresses are not filled or are filled partially with formation of cavities inside hole.
18 cl, 11 dwg