A generator of electrical oscillations of sound frequencies

 

(57) Abstract:

The invention relates to semiconductor devices, particularly to generators, controlled by an electric field, and can be used in electronics, automation and information technology. The inventive generator of electrical oscillations of sound frequencies contains connected in series to the current source, a load resistance and a self-oscillating environment. Self-oscillating environment made of compensated manganese silicon p-type conductivity with a resistivity = (2,1 3,7)103Omsm. 2 Il., table 1.

The invention relates to semiconductor devices, particularly to generators, controlled by an electric field, and can be used in electronics, automation and information technology.

Known generator of sound frequencies based on the schemes of self-excitation and conversion of electrical oscillations [1]

The disadvantages of this generator are the complexity of the electrical circuits and large power requirement.

Known semiconductor generator spontaneous oscillations of relaxation form with a frequency of 10-105Hz, managed electricity is current, which is E 103In/see

Closest to the invention is a generator of electrical oscillations of sound frequencies that contain connected in series to the current source, a load resistance and a self-oscillating environment on the basis of silicon, offset by manganese p-type conductivity [2] In such a generator when electric fields E 600 V/cm at the temperature of liquid nitrogen (T=77 K) are excited injection self-oscillations of the current low frequency 2x x10-310 Hz.

The disadvantages of this generator is the inability to obtain current oscillation with a frequency greater than 10 Hz and a high threshold field excitation of these oscillations.

The aim of the invention is to increase the oscillation frequency of the current and the decrease of the threshold of electric field excitation of these oscillations.

The objective is achieved by the fact that the generator of electrical oscillations of sound frequencies that contain connected in series to the current source, a load resistance and a self-oscillating environment on the basis of silicon, offset by manganese p-type conductivity, self-oscillating medium completed with a resistivity =(2,1-3,7) 103Ω, see

The proposed generator to is in a constant electric field exceeds a certain threshold value. Performing a self-oscillating environment of crystals offset by manganese silicon p-type conductivity with a resistivity =(2,1-3,7) 103Ohm cm allows to reduce the threshold field Epvibration excitation current of audio frequency up to 16 to 36 V/cm and to increase the oscillation frequency in the range of 2.4 kHz.

In Fig. 1 presents a functional diagram of the proposed generator of Fig. 2 the dependence of the amplitude of the current oscillation Jkand the oscillation frequency fkfrom the electric field E > Fn.

The generator includes a metal casing 1. Self-oscillating medium in the form of crystal 2 through the dielectric substrate 3 is attached to the wall of the housing 1. Ohmic contacts are made by electrochemical deposition of Nickel, connected to pins 4 and 5. Conclusion 4 through a variable load resistance 6 (Rn) connects to the positive pole of the power supply with adjustable voltage in the range 0-24 Century, Output 5 is connected to the negative pole of the power source. The output AC signal of the oscillation current is removed from the load resistance 6. Self-oscillating environment as crystal 2 is made of a compensated manganese silicon is Argentum was carried out by diffusion alloying manganese industrial grade silicon KDB-10 (TU-48-4-295-74) in the temperature range 1020-1030aboutC for 2 h from the gas phase in a special quartz ampoules evacuated to 10-4mm RT.article.

The generator works as follows.

On the crystal 2 through the load resistance 6 (Rn) from the power supply adjustable voltage 0-24 Century When the electric field in the oscillatory environment reaches values greater than the threshold E< Fpin the chain of self-oscillations are excited current of audio frequency and sine wave forms, which are removed with the load resistance 6. The amplitude of the output signal can be linearly controlled by varying the magnitude of the load resistance 6 in the range of 103-104/Om.

The table shows the values of the threshold field Epand the threshold frequency fpdepending on the specific resistance of the oscillatory environment at room temperature.

From the analysis results shown in the table, it follows that the optimal values of resistivity of Si crystals < Mn > to perform self-oscillating environment, in which the threshold field Epmust be less than 50 V/cm, is (2,1-3,7) 103Ω, see

The reduction of the threshold field and the increasing frequency Kohler> The proposed generator self-oscillations of the current audio frequency excited because of the existence in crystals Si < Mn > the so-called recombination waves (PB). As you know, in semiconductors containing deep levels of asymmetric capture cross section for charge carriers can exist in PB at room temperature in the dark. The existence of PB associated with an uneven distribution of carriers along the sample and with a deep level. When electric field is greater than the threshold in the crystal, due to the deep level, mainly exciting charge carriers of one type, there are quasi-neutral fluctuations in the concentration of carriers and on the pattern of spread of a longitudinal wave electric field, i.e., PB. In the crystal are generated current self-oscillations with an amplitude of up to tens of μa and a frequency of a few kHz. This process occurs at room temperature and in the dark, because the crystal is not heated and there is no need refrigerant. As can be seen from the table, the proposed generator minimum value of Ep= 16 V/cm, which is almost 40 times smaller than the prototype, and the minimum value of fp=1,85 kHz, which is more than two orders of magnitude greater than that of the prototype.

Thus, the proposed generator during operation does not require special cooling, which helps to reduce additional costs and simplify device generator. In addition, the reduction of the threshold field to Ep< 50 V/cm allows to use small-sized power sources, and this increases the service life and the service life of the generator.

A GENERATOR of ELECTRICAL OSCILLATIONS of SOUND FREQUENCIES that contain connected in series to the current source, a load resistance and a self-oscillating environment on the basis of silicon, offset by manganese p-type conductivity, wherein, to increase the frequency of current oscillations and reduce the threshold electric field excitation of these oscillations, oscillatory medium completed with a resistivity of

= (2,1-3,7)103,Omsm.

 

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