The modulation of electromagnetic radiation and the electromagnetic radiation modulator

 

(57) Abstract:

Usage: the invention relates to optoelectronics, namely modulators of electromagnetic radiation. Essence: in the way of modulation of the electromagnetic radiation based on the change in carrier mobility that is managed in the change of transmittance with the passage of the radiation through the high-resistance semiconductor material when the temperature of the charge carriers in the semiconductor material by an external impact and temperature stabilization of a semiconductor material, and the device for containing the wafer of high resistivity semiconductor material, means external influences on the plate, and means for stabilizing the temperature of the plate, as a high-resistance semiconductor material wafer of gallium arsenide or indium antimonide. 2 S. and 4 C. p. F.-ly, 1 Il. table 1.

The invention relates to optoelectronics.

There is a method of modulation of electromagnetic radiation, including managed the change of transmittance with the passage of the radiation through the plate from the high-resistance semiconductor material, in which current carriers excite by the creation of the external exposure to heat of carriers [1]

The disadvantage of this method and modulator, providing a deep modulation of the microwave radiation is limiting the modulation frequency of the inertia of the process of excitation of carriers.

The closest to the proposed method and the modulator are methods of modulating the electromagnetic radiation based on the change in carrier mobility, comprising a controlled change in transmittance with the passage of the radiation through the plate from the high-resistance semiconductor material by temperature change of carriers in the semiconductor material and temperature stabilization plate, and a modulator of electromagnetic radiation containing a plate of high resistivity semiconductor material, means external influence to change the temperature of the carriers in the semiconductor material and means for stabilizing the temperature of the plate [2]

The disadvantage of this method and modulator, providing a deep modulation at frequencies of about 11 GHz, is to limit the spectral range due to changes in mobility in the redistribution of the carriers along the branches of the zone (intervalley transitions).

The invention is directed to rossilli due to a change in carrier mobility in the process of intraband transitions within the same branch areas (valleys).

The extension of the spectral range of the modulation is achieved by the fact that in the known method the modulation of electromagnetic radiation, including managed the change of transmittance with the passage of the radiation through the plate from the high-resistance semiconductor material by temperature change of carriers in the semiconductor material and temperature stabilization plate, as a semiconductor material using gallium arsenide or indium antimonide, and in a known modulator containing a plate of high resistivity semiconductor material, means external influence to change the temperature of the carriers in the semiconductor material and means for stabilizing the temperature of the plate, the plate is made of gallium arsenide or indium antimonide.

The drawing shows a schematic diagram of the proposed modulator.

Radiation 1 falls on plate 2 of gallium arsenide, temperature (lattice) which is stabilized by known means (thermostat) 3, which plate is in thermal contact.

The essence of the invention enables the achievement of the technical result of the modulation of the THz radiation and Milli is changing mobility in the transitions of carriers within the same branch areas (valleys).

Temperature control of carriers Tiis carried out by external impact. There are various methods of heating media. In the invention for temperature changes can be used either heating in the Annex to the plate voltage from an external source, or photorazor, which consists in the exposure of the plate radiation source with the energy of a quantum is greater than the width of the forbidden zone.

At millimeter wavelengths the main contribution to the absorption of gallium arsenide (indium antimonide) makes the interaction of radiation with gas free media (semiconductor plasma generated in the process of intraband transitions within the same branch (valley) area. The amount of absorption is determined by the following ratio:

5,2610 N where bugarovsky absorption, cm-1,

wavelength, microns;

n the refractive index;

N is the carrier concentration, cm-3;

m*/m is the ratio of the effective mass to the electron mass;

mobility, cm2/Sun.

Because mobility is

where e is the electron charge;

the relaxation time of the pulse, the assumption was made about the decisive influence on the absorption ve is associated with a temperature value:

=kTiwhere K is Boltzmann's constant.

The relaxation time is determined by the ratio of the probabilities of scattering media, corresponding to different mechanisms, and can be represented in General form () A where a and r parameters, corresponding to different scattering mechanisms, and specified for gallium arsenide electronic conductivity type 9000 for indium antimonide electronic conductivity type 77000

In the temperature range of 5-70 To mobility is determined by the ratio At3/2.

The table below shows the calculation results of the transmission exp l} on the wavelength modulated radiation 1.4 mm when using wafers of gallium arsenide with a carrier concentration 2,51011cm-3thickness of 35 microns.

When temperature stabilization plate of gallium arsenide to a temperature close to the temperature of liquid nitrogen and the heating media up to 300 K, the depth of modulation at a frequency of about 10 GHz is equal to 94%

1. The modulation of electromagnetic radiation, including managed the change of transmittance with the passage of the radiation through the plate from the high-resistance semiconductor material by temperature change of carriers in semiconductor materialswith gallium arsenide or indium antimonide.

2. The method according to p. 1, characterized in that the temperature change carriers on the plate serves voltage from an external source.

3. The method according to p. 1, characterized in that for changing the temperature current carrier plate is irradiated with optical radiation with quantum energy greater than the width of bandgap semiconductor material.

4. Modulator electromagnetic radiation containing a plate of high resistivity semiconductor material, means external influence to change the temperature of the media in poluprovodnikov material and means for stabilizing the temperature of the plate, wherein the plate is made of gallium arsenide or indium antimonide.

5. The modulator under item 4, characterized in that as a means for changing the temperature of carriers used a current source, connected through an ohmic contact with the plate.

6. The modulator under item 4, characterized in that as a means for changing the temperature of carriers used radiation source optically connected to the plate.

 

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