Analog-to-digital basic matrix crystal

 

(57) Abstract:

Usage: in microelectronics to create analog-digital ICS. The inventive analog-to-digital basic matrix crystal contains a substrate, bipolar transistors, valves integrated injection logic, resistors, forming isolated analog and digital part of the cell input and output, as well as capacitors and p-channel MOSFETs with a gate in the form of a p-n junction. The analog part is made in the form of a matrix of cells, which are located symmetrically relative to the longitudinal axis of the crystal along its short side, and each cell is surrounded by a set of resistors. Between the contact pads are bipolar transistors and capacitors. The cell input and output are located symmetrically relative to the longitudinal axis of the crystal around three sides of the digital part. Bipolar transistors and pinch resistors in these cells are located between the contact pads, each of which is placed a field-effect transistor and p-n-p transistors, field-effect transistor and resistors placed between the digital part and the area of the pads. 2 C.p. f-crystals, 6 ill.

The invention relates to microelectronics and potehnichnee, television and electronic measuring equipment.

Known base matrix crystal (BMC) BN-4, consisting of basic cells, within which and between which are the areas to trace in-circuit connections [1]

The disadvantages of this BMC are low density layout BMC and, consequently, a large area of the crystal, large cost and low yield IC, low functionality BMC due to the uniformity of components used, the length of the tire interconnects, optimal electrical parameters of transistors and other elements.

Closest to the invention from the known analog-to-digital BMC (AC BMC) is AC BMC XR-400-containing substrate, bipolar transistors, valves integrated injection logic (PII), resistors, forming isolated analog and digital part of the cell input and output, and the digital part is made in the form of a rectangular matrix of cells, surrounded by a set of diffusion bridges, each of which contains valves PII, arranged in two rows, the area for placement of metallized pads on the periphery of the crystal, and areas for strip m is , it contains 38 pads, 140 resistors with a total resistivity of 2.9 Mω, 104 n-p-n and 19 p-n-p transistors, including 3 n-p-n transistor high power, 256 valves PII, and the total number of items BMC is 751. The density of the composition BMC prototype 94 of element per square millimeter square.

Disadvantages BMC prototype are limited functionality due to the small number of components, sub-optimal electrical parameters of the transistors and other elements (inefficient valve PII with high power consumption and large switching time, and the horizontal p-n-p transistors), and the inability to apply methods of automated wiring tire connecting metallization. This makes it difficult to use BMC when designing IP for radio and television equipment, where necessary elements with different areas, the active elements with low noise and a wide range of operating currents, a large number of resistors of different part types with a large total resistivity, capacitors and field-effect transistors.

The technical result of the invention is to expand the functional volny valve PII (valve vertical injection logic) vertical p-n-p transistor), the possibility of applying methods of automated wiring tire connecting metallization with the placement of elements in an orthogonal grid.

For this AC BMC containing substrate, bipolar transistors, valves PII, resistors, forming isolated analog, digital part of the cell input and output, and the digital part is made in the form of a rectangular matrix of cells containing valves PII, arranged in two rows, each of which is surrounded by a set of diffusion bridges, the area for placement of metallized pads on the periphery of the crystal, and areas for laying metallic tire interconnection and placement of contacts to the substrate, added capacitors and p-channel MOSFETs with a gate in the form of a p-n junction, the analog part is made in the form of a matrix of cells forming rows, which are located symmetrically relative to the longitudinal axis of symmetry of the crystal, and each cell is surrounded by a set of resistors, connected in the resistive region of the n-type contact region, and between the contact pads surrounding on three sides the analog part of the AC BMC, each of which posted by p-channel field-effect transistor with a gate the market, p-n-p transistors and the capacitors of the cell input and output are located symmetrically relative to the longitudinal axis of the crystal around three sides of the digital part of the AC BMC and made in the form of a set of bipolar transistors, pinch resistors, resistors and p-channel field-effect transistors with a gate as the p-n junction, and n-p-n transistors and pinch resistors in these cells are located between the contact pads, each of which posted by p-channel field-effect transistor with a gate in the form of a p-n junction and p-n-p transistors, p-channel field-effect transistor with a gate in the form of a p-n junction and the resistor placed between the digital part of the AC BMC and area of the pads, all the resistors cells I/o United in one common resistive region of n-type contacts to the field.

To apply methods of automated wiring metallized tyres, it is advisable to contact all of the elements of AC BMC placed at the nodes of an orthogonal grid with the possibility of placing metallic tire between, and in contact Windows on the lines of this grid.

The technical result of the invention is achieved most fully, if the cell analog part to perform in the form of a rectangular Matri the investors metallic sheen.

In the proposed AC BMC n-p-n transistor contains an isolated area of n-type rectangular inside its rectangular concentric area contact to the collector n+-type contacts which are arranged in concentric contact area of the collector, and inside the area of the collector contact is a rectangular area of the base p-type with two contacts, the center of which is formed a rectangular area of the emitter of the n+-type contact, with the possibility of placing between the contacts to the collector and contacts to the base and the emitter of the metallized tires p-n-p transistor contains an isolated area of n-type rectangular inside its rectangular concentric region of the collector p-type contacts which are arranged in concentric contact area to the collector inside the base region of n-type formed in it a rectangular emitter p-type and the two n+-type contacts to the base, located on the sides of the field emitter, with the possibility of placing between the contacts to the collector and contacts to the base and the emitter of the metallized tires p-channel field-effect transistor with a gate in the form of a p-n junction stergiou placement between the contact region of p-type and the gate metallic sheen, resistors, diffusion jumpers and pinch resistors made with the possibility of accommodation between the contact Windows of these elements metallized tires connection metallization, the integral capacitor contains an isolated area of n-type rectangular shape with contacts to it, and this area is the lower capacitor plate, the upper plate which serves as the metal layer.

Additionally, the valve PII contains an isolated area of the n-type located beneath the rectangular area of the injector p+-type contact to which is the area of the p+-type, as well as the rectangular area of the base p-type, in which is formed a rectangular collector region of n-type contacts, and the contact to the base is located between the two contacts to collectors or on the edge of the base area.

The proposed design of AC BMC, as shown by tests, allows to increase the percentage yield of the IC, to reduce their costs, increase the density of the layout elements of the BMC, to optimize their required parameters and at the same time to ensure conflict-free trace interconnects, to apply automated tracing methods and to extend the functionality BH">

In Fig.1 shows the topology for AC BMC for design of analog-digital ICS; Fig.2 cell analog AC BMC; Fig.3 cell digital part of the AC BMC; Fig.4 cell I/o AC BMC; Fig.5 transistors AC BMC; Fig.6 valve PII.

AC BMC contains the analog part 1, cell 2 analog part digital part 3, cell 4 digital part of the cell 5 I/o, metallized contact pads 6, the bipolar transistor 7, a capacitor 8, p-channel MOSFETs 9 shutter in the form of a p-n junction, a resistor 10, a diffusion jumper 11, area 12 for placement of the contacts to the substrate.

Cell 2 analog AC BMC (Fig.2) contains n-p-n and p-n-p transistors 13 and 14, respectively, with the indicated aggregate is permitted to pass tyres connecting metallization, represents an orthogonal grid 15.

Cell 4 digital part of the AC BMC (Fig.3) contains valves PII 16.

Cell 5 I/o AC BMC (Fig.4) contains n-p-n and p-n-p transistors 17 and 18, respectively, p-channel MOSFETs 19, the pinch resistor 20 and the resistor 21.

n-p-n transistor 13 includes an isolated region 22 of n-type region 23 of the contact to the collector, the base region 24 and strihavka in Fig.5).

p-n-p transistor 14 includes an isolated region 26 of the n-type region 27 of the collector, the base region 28 with two areas 29 of the contacts to the base and the emitter region 30 with the specified options in the passing tire connecting metallization (shown by hatching in Fig.5).

Valve PII, contains an isolated area of 31 n-type region 32 of the injector region 33 of the contact to the injector region 34 of the base and the area 35 of the collector (Fig.6).

The proposed AC BMC has an area of 3,8x3,1 mm2contains 32 pads, 650 resistors with a total resistivity of 2.6 Mω 4 capacitor 10 pF each, 144 n-p-n and 94 p-n-p transistor, including 12 n-p-n and 8 p-n-p transistors high power, 66 p-channel field-effect transistors with a gate as the p-n junction, 320 valves PII, and the total number of items BMC is 1470. The density of the composition BMC 125 elements per square millimeter square. Thus, the proposed AC BMC exceeds BMC-the prototype of the number of transistors is almost 2 times, contains two times more elements, and the density of the layout exceeds the prototype 25%

The proposed AC BMC can be fabricated using bipolar technology.

1. ANALOG-to-DIGITAL BASIC Ministory, forming isolated analog, digital part of the cell input and output, and the digital part is made in the form of a rectangular matrix of cells containing valves integrated injection logic, arranged in two rows, each of which is surrounded by a set of diffusion bridges, the area for placement of metallized pads on the periphery of the crystal, and areas for laying metallic tire interconnection and placement of contacts to the substrate, characterized in that the crystal is additionally introduced capacitors and p-channel MOSFETs with a gate in the form of a p-n junction, the analog part is made in the form of a matrix of cells, forming rows, which are located symmetrically relative to the longitudinal axis of symmetry of the crystal along its short side, and each cell is surrounded by a set of resistors combined into one resistive region of the n-type contact region, and between the contact pads surrounding on three sides the analog part, for each of which there is a p-channel field-effect transistor with a gate in the form of a p-n junction, symmetrically relative to the longitudinal axis of symmetry of the crystal, there are n-p-n transistors, p-n-p transistors and capacitors, the cell is STI and made in the form of a set of bipolar transistors, pinch resistors, resistors and p-channel field-effect transistors with a gate as the p-n junction, and n-p-n transistors and pinch resistors in these cells are located between the contact pads, each of which posted by p-channel field-effect transistor with a gate in the form of a p-n junction and p-n-p transistors, p-channel field-effect transistor with a gate in the form of a p-n junction and the resistor placed between the digital part and the area of the pads, all resistors cells I / o United in one common resistive region of n-type contacts to the field.

2. The crystal under item 1, characterized in that the contact window all matrix elements of the crystal are located at the nodes of an orthogonal grid with the possibility of placing metallic tire between, and in contact Windows on the lines of this grid.

3. Crystal on PP.1 and 2, characterized in that the cell analog part is made in the form of a rectangular matrix of bipolar transistors with the possibility of placing between the contact Windows to the active areas of the transistors metallic sheen.

 

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