The device group for pulling single-crystal fibers of refractory materials
(57) Abstract:The invention relates to growing the single crystal from the melt of long fibers of refractory materials. The proposed device consists of a high-temperature growth chamber and the secondary camera installed on its cover. Growth chamber vacuum. It installed heater-boat to melt the block of formers and fridge-lock. In the lid of the growth chamber are made the holes for the output fiber. Roller pull mechanism placed in the additional chamber, with the upper rollers of the pulling mechanism mounted vacuum-tight in the output gap secondary camera. The holes for the output fiber from the growth chamber shielded cooler-clamp having a slit of variable cross-section. Fridge-latch mounted in the growth chamber, provided with an outer vacuum-tight by the arm. 1 C.p. f-crystals, 2 Il. The invention relates to growing the single crystal from the melt of long fibers of refractory materials, in particular oxides, for example, sapphire, ruby, YAG garnet and otherKnown device for pulling from respektowania  the Installation includes a vertically moving horizontal surface, which supports the furnace, consisting of two concentric quartz tubes attached with the sleeve and flange to the horizontal surface. The upper ends of the tubes are fixed in the head. The head is constructed so as to provide input in the furnace space of a long rod extrusion, which is attached to it. The lower end of the pull rod has an extension in the form of a rod, which acts as the holder for the seed crystal. Between the walls of the tube is continuously fed cold water. Furnace space surrounded by the coil of the heater. Mechanism design crystal pulling may be different, but it is preferable to use a pulling mechanism with hydraulic drive. Group pulling in the installation provides a compilation of several individual capillaries of the formers in the group.However, the winding of the yarn on the drum is carried out in this facility within the crystallization chamber, which is several times increases the size of your camera and allows you to correct defects in the winding, making it difficult to extract the group of long fibers.Closest to the invention is an installation for group cultivation fibers by capillaceum, block formers and fridge-lock. In the cover of the camera made the crack to output fiber with block sealing. Above the growth chamber installed roller pull mechanism.However, poor sealing chamber growth does not ensure receipt of vacuum in it, i.e. not provided with the vacuum output fibers from the growth chamber and vacuum seal the outer movements fridge-release. Therefore, the process of obtaining single-crystal fibers produced in the cell growth in the flow of argon pressurized last. This process requires a large consumption of expensive highly pure argon, which is a very costly process.The invention consists in that the installation comprises a high-temperature growth chamber in which is installed a heater-boat to melt the block of formers and fridge-lock, and additional camera installed on the lid of the growth chamber in which is placed a roller pull mechanism. Roller pull mechanism consists of two rows of upper and lower rollers, and the rollers of the upper row set vacuumpack in the output gap secondary camera and are continuous in the / establishment, which screened cooler-lock, with the gap variable section.Fridge-latch mounted in the growth chamber may be provided with an outer vacuum-tight by the arm.Due to the fact that the upper rollers are installed in the secondary camera vacuumpack, and refrigerator-latch equipped with a vacuum-tight manipulator, in cavities of growth and additional cameras is provided by the vacuum.In Fig.1 shows the proposed device; Fig.2 extra Luggage.The device group for pulling single-crystal fibers of refractory material consists of a high temperature growth chamber 1 and the secondary camera 2. In the camera 1 set the heater-boat 3 with the melt, block 4 of the formers and fridge-latch 5. In the cover 6 the growth chamber 1 has an opening 7 for the output fiber, which is shielded by the cooler 8 having a slot 9 variable cross-section. Secondary camera 2 mounted on the cover 6 the growth chamber 1. Additional camera 2 has a roller pull mechanism 10, consisting of the top 11 to 14 and the bottom 15 and 16 of the rollers. The upper rollers 12 and 13 are made of rubber vacuum, and the rollers 11 and 14 of the metal. The upper rollers 11-14 simultaneously is the art of transport. They are equipped with a device that allows you to raise the rollers during drawing of the fiber. The slit 9 variable cross-section formed by two converging copper screens 17 and 18 of the cooler 8, one of which is mounted on a spring. The upper rollers 11 to 14 are installed in the output gap 19 secondary camera 2 vacuumpack, providing vacuum.net total cavity formed jointly by the buildings of the growth chamber 1 and the secondary camera 2, with continuous output fiber from cameras 1 and 2. Fridge-latch 5 is equipped with a vacuum-tight high-frequency external pointing device 20, which allows the alignment slits of the refrigerator latch 5, without breaking the vacuum in the growth chamber 1.In Fig.1, 2 are depicted as molybdenum screens 21 with stand. the tokovodov 22 with a vacuum seal 23, the vacuum seal 24 the Foundation of the secondary camera, the group pulling fibers 25, structurally 26, vacuum seal 27 of the rollers and a device 28 for distributing rollers 15 and 16.The device operates as follows.In high temperature (2300about(C) the growth of the vacuum chamber 1 from the melt, is placed in the heater-boat 3, with the help of block 4 of the formers produce continuous vytyagivaya group of fibers is fixed fridge-latch 5. Using this same refrigerator-latch 5 is set to the supercooling of the melt to the crystallization front. Then the group of fibers through the hole 7 is fed to the secondary camera 2 through a variable slit 9 of the cooler 8. Continuous stretching of the fibers is carried out roller mechanism (11-16), which is both a transport and a vacuum output fiber from the installation. The lower rollers 15 and 16 are divorced. This device makes it possible to smoothly without damaging the fiber during the drawing, continuously go from Kristallografiya to the seed, and then to the group of fibers. Next, the first crystallochemical with seed, and then a group of fibers is fed to the rollers 13 and 14 and sequentially outputted from the device. Derived from the device, the fiber wound on the drum. The outer arm 20 allows centering shifts slit fridge-latch 5 with the passage of the fiber.Due to the fact that the upper rollers 11-14 installed vacuumpack in the output gap 19 secondary camera 2, and refrigerator-latch 5 is equipped with a vacuum-tight manipulator 20 in the cavity height of the camera 1 and the secondary camera 2 is provided a vacuum. Therefore, the proposed device provides fibers, what is important in the manufacture of optical fibers. Growing fiber in the chamber 1 is carried out in vacuum with a residual pressure of 10-5tor or in the atmosphere of Ar pressure of 1.2 kg/cm2.The use of rollers of rubber vacuum with a small amount of high temperature camera 1 (the distance from the secondary chamber to the heater-shaper 350 mm) is possible due to the shielding holes 7 cooler 8. The cooler 8 is simultaneously an additional retainer of the fiber, reducing the vibration of the fiber.The proposed device allows for a process of growing single-crystal high-temperature fiber (temperature 2100aboutC and above) in vacuum at continuous output fiber and winding it on the drum outside of the device. 1. The DEVICE GROUP FOR PULLING single-crystal FIBERS OF REFRACTORY MATERIALS, including high temperature growth chamber with a lid and pull roller mechanism, consisting of upper and lower rollers are driven, the camera is in the heater-boat to melt the block of the shaper and refrigerator-holder, and cap the growth chamber are made the holes for the output fiber, the balance of the optimum camera mounted on the lid of the growth chamber, the upper rollers of the pulling mechanism mounted vacuum-tight in the output gap secondary camera and the hole for the output fiber from the growth chamber shielded cooler-clamp having a slit of variable cross-section.2. The device under item 1, characterized in that the refrigerator is a latch mounted in the growth chamber equipped with a manipulator.
FIELD: devices for continuous grouped growing of the orientated layers of silicon on a carbonic fabric.
SUBSTANCE: the invention is pertaining to the field of growing of polycrystallic layers from a melt of silicon and may be used in production of solar cells (photo-converters) Substance of the invention: the device consist of a crucible for a melt mounted inside a heater, a substrates connected to gears of their relocation and a capillary feeding mechanism. The substrates are made out of a carbonic reticulated fabric, and the capillary feeding mechanism consists of two horizontal sections, located to the left and to the right of the crucible, each of which has a tail swathed by harnesses out of a carbonic thread. The crucible is made with the bottom hollow elongated spout supplied with an independent heater, under the crucible there is a tank for a drain of the crucible residue, the inner surface of which is coated by a layer of a hexagonal boron nitride, and above the crucible a vibrating feeder for feeding the ground silicon is mounted.
EFFECT: the invention ensures growing of polycrystallic layers from a melt of silicon.
FIELD: devices for growing from a melt of polycrystalline layers of silicon used for production of solar sells.
SUBSTANCE: the invention is pertaining to the field of growing from a melt of polycrystalline layers of silicon and may find application in production of solar cells (photoconverters). The substance of the invention: the device includes a crucible for a melt, a heater, a substrate linked with the gear of its relocation and a capillary feeding mechanism. The substrate is made out of a carbon reticular fabric, the heater consists of two sections of heating: a square section, inside which the crucible is mounted, and a right-angled section located above the substrate. At that the cross-section of the heater components is selected so, that the section of heating of the crucible is overheated in respect to the section of heating of the substrate. For a capillary feeding of the melt of silicon from the crucible use harnesses made out of a carbon filament spooled on a tail-end of the feeding mechanism. For replenishment of the level of the melt in the crucible use a vibrofeeder to feed the crushed silicon. The technical result of the invention is an increased productivity of the device and formation of conditions for production of the orientated coarse-crystalline structure of a silicon layer on the substrate naturally open for making of the rear electrical contact.
EFFECT: the invention ensures an increased productivity of the device, production of the orientated coarse-crystalline structures of the silicon layers on the substrates.
1 dwg 1 o
FIELD: electronic industry; production of profiled crystals from semiconductor materials and other materials used in electronic industry.
SUBSTANCE: proposed method consists in growing profiled crystals from melt by drawing the seed holder and imparting rotation to seed holder and to molding agent with capillary zone for delivery of melt located between inner and outer curvilinear edges of working surface in form of spiral; the following relationship is satisfied: dR/dα≥0, where R and α are radius and angle of polar coordinate system with center at point of intersection of plane in which edges of working surface of molding agent and axes of its rotation lie. Molding agent may be so made that its working surface is located at angle relative to plane of its base. Molding agent may be made at gradual increase of molding surface above base. Proposed method may be used for growing crystals from rubin, sapphire, alumoyttrium garnet, composite eutectics refractory oxides, lithium niobate, molybdates of rare-earth metals and other substances of various forms, hollow parts inclusive in form of cone, sphere, rod (cylinder), ellipsoid at section in form of trochoid or any open curve at homogeneous structure.
EFFECT: possibility of obtaining constant thickness of crystal or thickness changing according to definite law.
5 cl, 10 dwg
FIELD: production of shaped crystals of refractory compounds such as leucosapphire, ruby, aluminum-yttrium garnet and other by growing from melt according to Stepanoff method.
SUBSTANCE: method comprises steps of evacuating melting chamber and warming heat zone; adding to melting chamber at least one inert gas; providing temperature of heat zone till melting temperature of initial raw material in crucible while filing capillary system of shaper with melt; flashing seed crystal and growing it on end of shaper; drawing crystal; tearing off crystal and cooling it. During those steps applying to melting chamber mixture of inert gases containing, mainly argon and at least helium; setting in melting chamber pressure of mixture that is less than atmospheric pressure and after growing crystal up to its complete section melting off grown part of crystal just till seed and again realizing growing procedure. Then crystal is finally grown. After cooling ready crystal the last may subjected to annealing outside melting chamber for two stages, at first in reducing carbon-containing gas medium including inert gases and then in vacuum.
EFFECT: possibility for producing high optical quality crystals with improved uniformity of optical properties, less loss of yield, lowered cost price of produced crystals.
8 cl, 2 tbl
FIELD: growing monocrystals of refractory oxides from melts by oriented crystallization; production of sapphire monocrystals corresponding to opto-electronics requirements.
SUBSTANCE: proposed device has vacuum chamber with crucible and molding unit, tungsten heater, shields, rod with seed holder which is provided with crystal raising mechanism mounted outside the chamber, melt make-up system made in form of bin with tube and unit for control of heating and rate of raising the crystal. Device is additionally provided with annealing vacuum chamber mounted above chamber with crucible and molding unit coaxially relative to it and system for synchronization of mass of crystal being grown and consumption of make-up material; annealing vacuum chamber is provided with self-contained heater whose height is equal to or exceeds maximum size of length of crystal obtained; diameter of annealing chamber ranges from 0.6 to 0.9 of diameter of lower chamber; mounted in between chambers is partition with holes for rod with seed holder, crystal being grown and make-up; molding unit is made in form of parallelepiped with parallel through vertical slots which is mounted in crucible at clearance and is secured on crucible walls; height of parallelepiped is equal to 20-30% of crucible height; width of slots is 0.2-0.3 mm at distance between them of 0.2-0.5 mm; in horizontal plane ends of slots are blind. Proposed device makes it possible to eliminate voids lesser than 50 mcm in diameter at obtaining the crystals whose transversal size is lesser than 100 mm at crystallographic orientation of <1010> or <1120>. Power requirements are reduced by 4-6 times. Monocrystals grown with the aid of this device have low internal stresses which is important for further mechanical treatment of crystals.
EFFECT: reduced power requirements; low internal stresses of crystals.
7 cl, 2 dwg
FIELD: growing germanium monocrystals.
SUBSTANCE: germanium monocrystals are grown from melt on seed crystal with the use of molder filled with melt; molder has holes for removal of excessive melt formed during crystallization. First, crystal is enlarged on rotating seed crystal in radial direction till it gets in contact with molder placed in crucible without melt; then, rotation of crystal is discontinued and crystallization is carried out in axial direction by lowering the temperature till complete hardening of melt; molder is provided with holes in its lower part located at equal distance from one another at radius r satisfying the condition r<K/h, where K= 0.2 cm2; h is height of melt, cm; number of holes, 12-18. Molder may be made in form of round, square or rectangular ferrule. Proposed method makes it possible to obtain germanium crystals of universal shape with no defects in structure, free from mechanical stresses and homogeneous in distribution of admixtures.
EFFECT: increased productivity; reduced technological expenses; increased yield of product.
2 cl, 2 dwg, 2 ex
FIELD: chemical industry; methods of growing of the rectangular monocrystals of sapphire.
SUBSTANCE: the invention is pertaining to the technology of growing from melts of the monocrystals of sapphire and may be used at production of the volumetric crystals with the crystallographic orientation along the axis <1010> or <1120>. The device contains the vacuum chamber with the installed in it the crucible, the rectangular shaper, the heater assembled out of the lamellas fixed on the current leads, the screens, the rod with the seed-crystal holder and the systems adjusting the hoisting speed of the seed crystal and power of the heater. The crucible, the generatrix of the lamellas and the deflector have the rectangular form, between the bottom of the crucible and the shaper there is the spacing, the altitude of the walls of the shaper exceeds the altitude of the crucible. The wall of the shaper in their upper part are made slit along the ribs and bent off along the slits in the direction of the walls of the chamber, the shaper rests on the upper edge of walls of the crucible by its slit parts. The technical result of the invention consists in the rise of the output of the single crystals up to 60 % due to reaching of integrity of the geometrical shape of the crystal with the crystallographic orientation along the axis <1010> or <1120> and acceleration of the growing process.
EFFECT: the invention ensures the increased output of the suitable single crystals up to 60 % due to reaching the integrity of the geometrical shape of the crystal with the crystallographic orientation along the axis <1010> or <1120> and acceleration of the growing process.
5 cl, 2 dwg
FIELD: crystal growth.
SUBSTANCE: device comprises vacuum chamber with melting pot and molding unit, wolfram heater, shields, rod with the holder for seed provided with a mechanism for lifting crystal and mounted outside of the chamber, and melt make-up system made of a hopper with tube and system for control of heating and rate of crystal lift. The device is additionally provided with roasting vacuum chamber that is mounted above the chamber with melting pot and molding unit coaxially to it and the system for synchronization of mass of the crystal to be grown and the flow rate of the make-up material. The roasting chamber has autonomous heater whose height is equal or exceed the maximum size of the length of the crystal to be grown. The diameter of the roasting chamber is 0.6-0.9 of the diameter of the bottom chamber. The baffle provided with openings for the rod with seed holder is interposed between the chambers.
EFFECT: enhanced quality of crystal.
6 cl, 2 dwg
FIELD: technological process.
SUBSTANCE: invention pertains to growth of monocrystalline silicon layers from a molten mass, and can be used in making solar cells (photoconverters). The device consists of a crucible for melting, a heater, consisting of two heating sections: a square one, the inside of which is fitted with a crucible, and a rectangular one, put over a substrate, a substrate, linked to its displacement mechanism, capillary feeder, bundles of carbon fibres, wound on the tail of the feeder, and a vibrating feeder for supplying crushed silicon. The substrate used is a carbon foil, covered by pyrographite layers. The capillary feeder has an opening for putting in the substrate, and the rectangular heating section is symmetrical about the substrate and has vertical incisions for letting in the substrate.
EFFECT: increased output of the device due to growth of thin silicon layers at the same time on both surfaces of the substrate, due to reduction of the specific consumption of initial silicon due to that, the substrate does not get soaked in the molten mass.
1 ex, 2 dwg
FIELD: metallurgy, crystal growth.
SUBSTANCE: invention concerns field of receiving profiled crystals of refrectory compounds, for instance, leucosapphire, ruby, yttrium aluminum garnet and others, growth from melt by method of Stepanov. Facility contains pot with installed in it form-builder with vertical capillary channels, at that it is outfitted by nozzle, fixed on bottom end of form-builder, enveloping it with forming of closed cavity, communicating to pot chamber by means of holes, implemented in nozzle. Nozzle can be fixed on bottom end of form-builder as with firm adherence to its side walls, as with formation of open between side walls of nozzle and form-builder. In nozzle chamber which is lower butt end of form-builder can be located filler with ability of passing of melt to the capillary channels. Filler can be implemented in the form of rods, or plates, or wires and located in chamber of nozzle as several layers.
EFFECT: receiving of crystals of higher quality, increasing of product yield and decreasing of cost price of receiving crystals.
11 cl, 4 dwg