The method of recording and reproducing optical information

 

(57) Abstract:

Usage: three fototapete, technical photography, thin-film gauges dose of light radiation. The inventive film carrier of chalcogenide glasses exhibit a recordable optical radiation with different desired wavelengths. The quantum energy of the radiation is greater than or equal to the width of the forbidden zone of material media. At the same time the material of the carrier is subjected to chemical etching to the desired thickness change information sites. When the reproduction of the information record reflected from the information sections of the media playback light signals with wavelengths different from the wavelengths reproducing radiation. 1 Il.

The invention relates to fototapete and reproduction of optical information on the layer of amorphous semiconductor material that changes optical density and reflectivity under the direct action of actinic light in the image creation process, and can be used in the devices of the recording-playback of optical information, technical photography, when the thin film gauges dose of light radiation.

Closest to the invention is a method of recording information, as well as the manufacture of photomasks, which consists in the fact that the process of image formation is carried out by exposure to the medium of film XC radiation with simultaneous etching of the film, i.e., produce process photostimulated etching. This reproduction of information is performed on the transmission, in the case of manufacturing photomasks film cholesterol in the affected radiation release to the metal film [2].

The disadvantage of this method is the low sensitivity of the medium during recording, which requires the use of powerful radiation sources (lasers etc). The sensitivity of LDL is usually estimated to be about 0.1-1 j/cm2in this connection it is believed that the light of low intensity optical properties of CS does not change (see, for example, Lubin C. M. non-silver photographic processes. /Ed. by I. C. Berezina, Chemistry, 1984). For example the simulation image, when exposed to intense radiation formed surface layer veil with a thickness of 0.5 microns with substantially modified properties, which prevents the process of recording and reproduction of information. The media using this method does not allow to obtain a color image.

The purpose of the invention is the provision of recording and reproducing a color image.

To achieve the goal according to the method of recording and reproducing optical information in which the recording process exhibiting a film carrier of cholesterol information by light radiation with quantum energy greater than or equal to the width of the bandgap of the material of the carrier, which is simultaneously subjected to chemical etching to the desired thickness change information sections, and when the reproduction of the information medium is irradiated with reproducing light radiation and record the reproduced light signals, in the process of recording information media sites exhibit radiation with different desired wavelengths, and when playing a record reflected from the information sites light signals with wavelengths different from the wavelength of reproducing light beam.

where 1 corresponds to the original color film media Burgundy, 2 - color after 1 min etching - red-purple, 3 - color after 30 min of etching - yellow, 4 - bright-yellow color after 40 min of etching.

Speed photostimulated etching or photostimulated oxidation depends on the parameters of the recording radiation (quantum energy, intensity and time of exposure even when measuring (superweak) intensities). Change the speed of etching leads to the fact that in this part of the film media thickness it varies depending on the parameters of the radiation due to the nonlinear absorption of radiation in XC. When using thin films XC found that the change in thickness causes a color change on reflection, in the process photostimulated etching or oxidation of the color of the film changed from light yellow to dark yellow, crimson, green. The feature is that the color of the film changes when exposed to radiation of the order of 100 LX or more (10-5W/cm2that allows to use in the process of recording a radiation of low intensity.

P R I m e R 1. Spent etching film thickness of 0.6 μm system As-Se, deposited on the polyester in the vacuum 10-4mm RT.article To increase the sensitivity of the process snaprestore alkali (1% solution of KOH) under the action integral light 100 ml (10-5W/cm2and in the absence of exposure to the etching process has removed the spectra of transmittance and reflectance spectrometer UV-VIS.

The transmission spectra in the region of 0.5-0.8 μm have a maximum transmittance in the region of 0.65 μm. Within the first minute there is an increase in bandwidth by 10% , and during the subsequent etching is reduced by 10-15% relative to the starting value.

Much more information give the reflectance spectra of the films (see figure). As can be seen, significant changes in the spectra in the region of 0.35 to 0.5 μm, there is a reduction of signal strength. In the region of 0.5-0.6 μm increases the level of the signal. A significant change in the reflectance spectra is accompanied by a color change of the film from the initial maroon to dark red and after prolonged etching to yellow and bright yellow. Fundamental is the fact that the etching rate of the film carrier when the illumination intensity of 10-5W/cm21.2-1.3 times higher than the etching rate of the unlit area (for a given concentration of a solution).

P R I m m e R 2 . Used films of As-Se, the resulting technology example 1. Conducted simultaneous etching and the irradiation of laser radiation 0.63 (non-Azar to 1.15 μm (quantum energy less than the band gap of the material) significant differences in etching rates lighted and unlighted areas were not observed. The etching rate when illuminated by radiation with quantum energy, greater than the band gap, namely of 0.53 μm, 1.3-1.5 times the etching rate when exposed to radiation with a wavelength of 0.63 µm. When exposed to radiation 0.63 and of 0.53 μm, the reflectance spectra of the film medium was changed similarly indicated on the graph, the rate of reduction of thickness was proportional to the intensity of the radiation. When etching with simultaneous exposure to radiation from a He-Ne laser (0.63 µm) has been a change in color of the film is similar to that specified in example 1, but the etching rate in 1,5-2 times higher than the etching rate at lower intensities (example 1).

Increasing the irradiation intensity of 10-2up to 10-1W/cm2increases the speed of etching 1.2-1.3 times (at a wavelength of 0.53 μm), a similar increase in intensity 0.63 increased etching rates of 1.1-1.2 times. Thus, there is a color change film from dark red to bright yellow.

P R I m e R 3. Conducted exposure film systems As-Se and As-S-Se by radiation from a He-Ne laser (to 0.63 and 1.15 μm) and an argon laser (of 0.53 μm) in air and in argon atmosphere. The film thickness of 0.6 to 0.8 μm obtained Napili reflection). More rapid changes occurred when exposed to radiation of an argon laser at 10-2W/cm2the decrease in the rate of color change is almost 2 times observed when exposed to radiation 0.63 µm of the same intensity. There were no changes when exposed to radiation of 1.15 μm and when exposed in an argon atmosphere.

Apparently, during exposure to air occurs the oxidation reaction

As2S3+ 3/2 O2As2O3+ 3S

where h is the Planck constant;

- frequency of optical radiation, resulting in evaporation As2O3the change of the film thickness and, as a consequence, the change in its color. Transmission spectra of this change slightly, there are two competing processes: in addition to reducing the thickness and increasing bandwidth are photostructural conversion into cholesterol, which usually lead to the reduction of the bandwidth (see prototype). In this regard, the total effect is negligible. In the event of exposure on the film XC radiation in a neutral environment (in argon) was observed darkening of the film and increase absorption, but noticeable color change does not occur.

P R I m e R 4. Significant changes color (reflection) and exposed to film systems As-S-Ge, As-S-Se thickness of about 0.5 μm, which was deposited on the aluminum sublayer on the polyester, of an integral light 104Lux (direct sunlight) for 10 min was changing color from dark yellow to crimson. This method was used to create the sensor doses. When using monochromatic radiation for modifying the color of the film can be determined intensity (knowing the exposure time) or to determine the exposure time at a known intensity. Comparison with the properties of sensors based on painted glass, used for determining the dose of ionizing radiation, shows the increased sensitivity of these structures by several orders of magnitude. Apparently, the rate of change of the optical properties of CS is proportional to the energy of the impinging photon intensity and time of exposure.

As shown earlier, for XC change the absorption rate EANDTINwhere E is the intensity, T is the exposure time; a and b are coefficients that depend on the photon energy.

The purpose of the invention is the recording and reproduction of a color image is achieved through various speeds photostimulated etching or oxidation on the oxidation causes the thickness in this area, for example, upon exposure of 0.53 μm smaller than the thickness at the site, which acted radiation 0.63 µm, respectively color (reflection) on the first segment is different from the color on the second, and also from the color on the site where the radiation did not fall.

In addition, the invention reduces the cost of materials used in connection with the use of CS to create a multicolor image, which is 3-4 orders of magnitude cheaper than using materials based on silver and used chemical reagents.

In the proposed method, the fixation of the obtained image can be conducted by applying a thin transparent film, for example a polymer film from a solution.

The method can be used in photometry, technical photography, to create sensors doses.

The METHOD of RECORDING AND reproducing OPTICAL INFORMATION in which the recording process exhibiting a film carrier of the chalcogenide glass of the information recording light radiation with quantum energy greater than or equal to the width of the bandgap of the material of the carrier, which is simultaneously subjected to chemical etching to the desired IZMENENIY radiation and record the reproduced light signals, characterized in that, to ensure the recording and reproduction of a color image in the process of recording information media sites exhibit radiation with different desired wavelengths, and when playing a record reflected from the information sections of the media reproduced light signals with wavelengths different from the wavelength of reproducing light beam.

 

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