A method of producing silicon multicrystalline
(57) Abstract:The invention relates to semiconductor technology and may find application in industry for the production of a number of discrete semiconductor devices (for example, load cells, field-effect transistors, switches, sensors, small movements and other devices). The proposed method includes the composition of the plate-substrate and the plate-source oriented in the direction of 100 and are arranged with a gap between them of 10 to 40 μm and the misorientation angles of the planes perpendicular to their working surfaces, equal to 1 20°, the formation of the liquid in the gap zone, creating a temperature gradient and subsequent local recrystallization plate - source by scanning the laser beam to exit at the surface of the fragmented zone. Before scanning the laser beam near the surface of the plate - source-side input beam has a filter of IrTran representing a circular plate with a diameter equal to the diameter of the plate - source, effective filter surface equal to the area of a square inscribed in the circumference of the filter, are made through the cracks. The invention relative to aamah for the manufacture of a number of discrete semiconductor devices (for example, load cells, field-effect transistors, switches, sensors, small movements, and others).The closest technical solution of the invention is a method of obtaining multicrystalline silicon, comprising a composition of two silicon wafers with a specified gap between them, capillary retraction into the gap of the melt, the formation of a zone of melt and moving it to the temperature gradient through one of the plates to the exit to the surface.In a known method of producing multicrystalline comprising heating the composition of the plate-substrate and the plate-source oriented in the direction <100> and arranged with a gap between them 10-40 μm and an angle of misorientation of the planes perpendicular to their working surfaces, equal 1-20aboutthe formation of the liquid zone in the gap, creating a temperature gradient and subsequent local recrystallization plate-source by scanning the laser beam to exit at the surface of the fragmented zone (set linear zones) before laser heating plate source near the surface have a filter of istrana (fluoride magnesium - MgF2), which is a round plate with a diameter of, recruiment filter, made through the cracks with the following geometrical parameters: width - h = 100-300 μm, length l = d/, the distance between them is b = 500-1000 μm, and the width of the gap (h) is related to the diameter of the laser beam D ratio h = k D, where k = 0,45-0,63.The essence of the proposed method of obtaining multicrystalline consists in the following.The plate-substrate representing a monocrystalline silicon wafer oriented in certain crystallographic directions, combined with single-crystal plate source so that the crystallographic directions of the substrate is <100> be deployed relatively directions <100> plane of the plate-source angle 1-20about; Liquid aluminum area formed by capillary retraction during isothermal aging composition: substrate-source with a capillary gap between the plates. Liquid zone produces a flat with a thickness in the range of 10-40 μm. The fragmentation of the flat zone is carried out by scanning a laser beam along a linear slits in the filter, oriented in the direction of the plate-source scan rate of 200-300 Hz. The need to use the filter absorbing radiation is in the distribution, i.e., on the peripheral regions of the beam energy density is much less than in the center of the beam. And this leads to uneven area to the heating area of the flat zone from which is formed a linear area, creating a migration pathway elements multicrystal. As a result of such heating parallel to the main line area formed by a set of micro-watersheds satellites, migrating through the plate-source and distorting forming region boundaries multicrystal, and subsequently impair their electrophysical properties. The filter containing the slit width h which is less than the diameter of the laser beam D by a specified amount, you can select only the part of the radiation, in which the intensity area of the beam is practically constant, and thereby to eliminate the conditions for mass education microzone satellites. When creating multicrystalline silicon is applied laser radiation in the infrared region with a wavelength of 1060 nm and the oscillation mode of THE00because in this area the silicon is transparent to radiation and all its energy is absorbed by the area. The choice of filter material - IrTran associated with work in this range of the spectrum.IrTran at the wavelength of 1060 nm passes only 5-7% of the radiation. In addition the program areas of the laser beam with an almost uniform over the area of the radiation intensity with a diameter of 100-300 μm you must use the original laser beam with a diameter of about 200-600 μm.The topology of the slots on the filter due to: firstly, the need to use the maximum square plate-source as the element base of multicrystal (hence the use of the area of a square inscribed in a circle coinciding with the diameter of the plate-source); secondly, the dimensions between the deformation boundaries multicrystal. The side of the square (a) inscribed in a circle of diameter d, is determined by the ratio a = d/. The length of the slits (l) is set equal to the side of the square (a). The thickness of the filter of IrTran ranged between 1.5-2 mm. However, given the physico-mechanical properties of the material of the filter is the optimal value of its thickness was 1.7 mmThus, after receiving the laser beam with a uniform area distribution of the energy of radiation and falling to the flat area is formed of a linear area that stands out from the flat and migrates through the temperature gradient from the plate-substrate through a plate-source to the surface of the latter.Obtained recrystallized layer inherits the crystallographic properties of the substrate, which allows you to create items multicrystal. Series scopes multicrystal obtained by ora is a filter, with the appropriate topology cracks. After forming the desired number of regions multicrystal stop heating, the workpiece is cooled and the surface of the plate-source zashlifovyvajut post it metal-solvent, and from the opposite side of the composition zashlifovyvajut plate-substrate and remains flat area.Thus, improving the uniformity of heating across the width of the formed linear zones is achieved by using the filter of IrTran having a linear slit, the topology of which corresponds to the topology generated multicrystal.Improving the quality of the obtained structures is provided to improve the uniformity of heating that can virtually get rid of the microzone satellites and reduce 3-5 times the density of the inclusions of the second phase.The temperature and time of process of formation of the flat zone of the solution-melt are typical when working with the system silicon-aluminum. To obtain a flat area can be used a method of introducing a metal-solvent from the end of the song.The range of the numerical values of the coefficient (k) in the formula connecting the width of the slit in the filter (h) and the diameter of the laser beam (D) is selected on the basis of the former is 100) 60 mm in diameter oriented in the direction <100> and combine them, leaving between them a capillary gap of 10 μm. Put the composition in bigradient furnace, where the temperature of 900-1000aboutWith capillary retraction form liquid aluminum zone. Then the composition is set in a special cassette that contains the filter of istrana, the thickness of 1.76 mm Filter is a circular plate of diameter d = 60 mm In this plate is inscribed a square of side a = d/ = 43 mm = 43 .On the effective area of filter (h) mm2made a slit along one side of a square with a length of 43 mm, a width of 100 μm, located through 500 μm. The filter is oriented so that the direction <100>wafer-source coincided with the direction of the slits. After that, the cassette is placed in a vacuum chamber and a side plate of the source lead of the laser beam, the diameter of which is determined from the formula D = . In this case, h = 100 ám, k = 0.45 and D220 μm. Orient it exactly in the center of the first slit filter and scan with a frequency of 200 Hz along the linear slit oriented along the direction of <100> wafer-source to output a linear area on the surface. Then the laser beam is moved along the surface of the filter until the next slot, which is located from the previous 500 μm, and repeat the operations in the crystal with a diameter of 60 mm is formed 65 working elements forming multicrystal (because really involved area h mm2). Then zashlifovyvajut plate-substrate with the remnants of the flat zone, as well as those on the plate surface of the source metal-solvent and receive the actual multicrystal silicon.P R I m m e R 2. As the plate-substrate take the silicon wafer with a diameter of 60 mm and a thickness of 300 μm. As the plate-source take the silicon wafer with the same diameter, but the thickness of 1000 μm. Prepare a portion of the aluminum 420 mg. Substrate is disposed on a plate-the source so that the angle between the directions <100> substrate and the source was 20about. The side have a portion of the aluminum. Put the composition in bigradient oven and maintained at a temperature of 1000aboutWith over 10 min, where the capillary is formed by drawing the liquid zone. Then, the resulting composition is placed in the cartridge, where is the filter of IrTran thickness of 1.7 mm, with a linear slit width of 200 μm and located through 800 μm from each other. Moreover, the direction of the slits coincide with the directions <100>wafer-source. Then the cartridge is placed in a vacuum chamber, to lectromagnetic the scanner scans the laser beam along the direction of <100> from the filter, to output liquid line area on the surface. The scanning frequency of 250 Hz. Then move the laser beam at a distance of 800 μm to the next slot on the filter, repeat the scan and get multicrystal containing 40 work items.P R I m e R 3. The difference of this example from the previous is that the filter has a slit 300 microns, located over 1000 microns.The filter diameter as the diameter of the compositions 76 mm Therefore, the effective area is h mm2. The diameter of the laser beam in this case D 476 μm (because k = 0,63). In this example, it turns out 41 work item multicrystal.The use of mutual orientation of the silicon wafer (substrate and source), the filter of IrTran absorbing radiation in the IR range, and the laser radiation received multicrystal containing the required number of work items that can be used in the manufacture of load cells, field-effect transistors, switches, etc. Metallographic examination of the samples showed that the amount of multicrystal completely no large inclusions ( 5 μm) of the second phase, and the density of small inclusions (< 5 μm) reduced in 3-5 Cristallo SILICON, comprising heating the composition of the plate-substrate and the plate-source oriented in the direction <100> and arranged with a gap between them, forming in the gap of the liquid zone and the recrystallization of the plate-source by moving zone in the temperature gradient across the plate source to output on its surface, characterized in that sets the gap between the plates the size of 10-40 μm, and the misorientation angles of the planes perpendicular to the working surfaces of the plates 1-20oliquid zone is moved by the scanning laser beam before crystallization at the surface of the plate-source-side of the laser beam is placed round the plate filter of IrTran MgFr diameter equal to the diameter of the plate-source, and with an effective surface equal to the square inscribed in a circle of filter square, on this surface izgotovlivajut through slit a length and width equal to kD , of the interval 100-300 μm, with the distance between 500-1000 μm, where d is the diameter of the filter, D is the diameter of the laser beam, K= 0,46-0,63 - factor, taking into account the uniformity of the energy density by the area of the laser beam.
FIELD: electrical engineering.
SUBSTANCE: according to the method, charge stock containing a gallium source and flux components is heated and maintained at the specified temperature or, alternatively, heated and slowly cooled down from the specified temperature inside a container, with a temperature gradient maintained between the upper and the lower parts of the container under a nitrogen-containing gas pressure. The flux, by way of core components, contains cyanides or cyanamides or dicyanamides of alkaline and/or alkaline-earth metals and modifying additives enhancing gallium nitride solubility and/or increasing growth rate and/or enabling control of physical properties of crystals obtained.
EFFECT: reduced rate of corrosion of the latter, improved quality of monocrystals obtained.
16 cl, 2 tbl
SUBSTANCE: charge is fused in a platinum crucible, the components are taken at a ratio, wt %: Fe2O3 - 5.37, B2O3 - 51.23, PbO - 29.31, PbF2 - 13.73. Thereinafter, the crucible with the melt-solution is placed in a growth furnace, heated to 900-950°C and maintained with stirring at said temperature for a day. Then the temperature is quickly reduced to 820-830°C, the diamagnetic crystal GaBO3 is dipped into the melt-solution fixed on the chip carrier and maintained for 0.5-3 hours with stirring. Then the temperature is lowered slowly at a speed of 3-40°C/h to 800°C, and the chip carrier is removed from the furnace.
EFFECT: invention allows to obtain a single-crystal film FeBO3 on the diamagnetic substrate GaBO3.
3 dwg, 3 ex
FIELD: production of solar batteries, integrated circuits and other semiconducting devices.
SUBSTANCE: the invention presents a method of production of alloyed monocrystals or polycrystals of silicon and may be used in production of solar batteries, integrated circuits and other semiconductor devices. The substance of the invention: the method of SUBSTANCE: the invention presents a method of production of alloyed monocrystals or polycrystals of silicon includes preparation of the initial charge consisting of 50 % of silicon alloyed with phosphorus with a specific electrical resistance of 0.8-3.0 Ohm·cm or boron with specific electrical resistance of 1-7 Ohm·cm, its melting-down and consequent growing of crystals from the melt, in which additionally enter elements of IV group from the periodic table by Mendeleyev, in the capacity of which use germanium, titanium, zirconium or hafnium use in concentrations of 1017-7·1019 cm-3. The invention allows to produce chips with high values of life time of minority carrier (LTMC), high homogeneity of electric resistivity (ER) and high concentration of oxygen, with a low concentration of defects and increased thermostability and radiation resistance.
EFFECT: the invention ensures production of chips with high values of LTMC, high homogeneity of ER and high concentration of oxygen, with a low concentration of defects and increased thermostability and radiation resistance.
2 cl, 4 ex, 1 tbl
FIELD: devices for continuous grouped growing of the orientated layers of silicon on a carbonic fabric.
SUBSTANCE: the invention is pertaining to the field of growing of polycrystallic layers from a melt of silicon and may be used in production of solar cells (photo-converters) Substance of the invention: the device consist of a crucible for a melt mounted inside a heater, a substrates connected to gears of their relocation and a capillary feeding mechanism. The substrates are made out of a carbonic reticulated fabric, and the capillary feeding mechanism consists of two horizontal sections, located to the left and to the right of the crucible, each of which has a tail swathed by harnesses out of a carbonic thread. The crucible is made with the bottom hollow elongated spout supplied with an independent heater, under the crucible there is a tank for a drain of the crucible residue, the inner surface of which is coated by a layer of a hexagonal boron nitride, and above the crucible a vibrating feeder for feeding the ground silicon is mounted.
EFFECT: the invention ensures growing of polycrystallic layers from a melt of silicon.
FIELD: devices for growing from a melt of polycrystalline layers of silicon used for production of solar sells.
SUBSTANCE: the invention is pertaining to the field of growing from a melt of polycrystalline layers of silicon and may find application in production of solar cells (photoconverters). The substance of the invention: the device includes a crucible for a melt, a heater, a substrate linked with the gear of its relocation and a capillary feeding mechanism. The substrate is made out of a carbon reticular fabric, the heater consists of two sections of heating: a square section, inside which the crucible is mounted, and a right-angled section located above the substrate. At that the cross-section of the heater components is selected so, that the section of heating of the crucible is overheated in respect to the section of heating of the substrate. For a capillary feeding of the melt of silicon from the crucible use harnesses made out of a carbon filament spooled on a tail-end of the feeding mechanism. For replenishment of the level of the melt in the crucible use a vibrofeeder to feed the crushed silicon. The technical result of the invention is an increased productivity of the device and formation of conditions for production of the orientated coarse-crystalline structure of a silicon layer on the substrate naturally open for making of the rear electrical contact.
EFFECT: the invention ensures an increased productivity of the device, production of the orientated coarse-crystalline structures of the silicon layers on the substrates.
1 dwg 1 o
FIELD: chemical industry; methods of production of the semiconductive materials.
SUBSTANCE: the invention is pertaining to chemical industry, in particular, to the method of production of the single-crystal silicon and may be used at growing the single-crystal silicon by Czochralski method. The method provides for smelting-down of the source silicon in the crucible, injection of the crystalline seed, the crystal drawing out from the melt in the rotating crucible onto the rotating seed at the coincidence of the direction of rotations of the crucible and the crystal. At that in compliance with the growth of the crystal in process of its production the speed of rotation of the crucible and the speed of rotation of the crystal is a step-by-step increasing at keeping approximately constant the ratio of the speeds of rotation of the crucible and the crystal. The method ensures production of silicon monocrystals with the homogeneous radial distribution of the dopant impurity and oxygen and with the uniform distribution of the required amount of oxygen along the length of the crystal.
EFFECT: the invention ensures production of silicon monocrystals with the homogeneous radial distribution of the dopant impurity and oxygen and with the uniform distribution of the required amount of oxygen along the length of the crystal.
6 cl, 2 ex, 2 dwg
FIELD: production of semiconductor material monocrystals.
SUBSTANCE: method involves formation of barium-containing coating of barium hydroxide on inner and/or outer surface of heated quartz crucible, said coating being formed by spraying suspension of barium hydroxide in air atmosphere on surface of quartz crucible heated to temperature of 100-150 C.
EFFECT: improved uniformity and homogeneity of coating to thereby increase yield of product and reduce discard in production of monocrystalline silicon ingots.
FIELD: treatment of silicon mono-crystals grown by Czochralski method, possibly manufacture of mono-crystalline silicon chips- members of solar batteries and integrated circuits.
SUBSTANCE: method comprises steps of pseudo-squaring of silicon mono-crystal for further grinding ribs of pseudo-squared ingot; cutting mono-crystals by chips. Ribs are ground alternatively; each rib is ground layer by layer in motion direction of tool and in parallel relative to lengthwise axis of ingot.
EFFECT: improved quality of mono-crystalline silicon chips due to safety of near-contour region of worked zone of ingot, lowered material (silicon) losses at working ingots.
3 cl, 1 ex, 1 tbl, 3 dwg
FIELD: chemistry; profiled silicon monocrystals manufacturing.
SUBSTANCE: silicon monocrystals are produced by crucible-free vertical float-zone method, which implies induction generation of a melt drip on initial vertical silicon ingot, seeding of monocrystal being grown on a seed  oriented silicon monocrystal, building-up of crystal conical portion to specified diameter, while moving initial ingot and coil in horizontal plane, under conditions, which provide for convex crystallisation front, and emergence of face (111) at melt centre surface at the moment the monocrystal specified diameter is reached. This is followed by hollow monocrystal growing, melt column, which connects the melt ring resting on the growing monocrystal with the drip on initial ingot, being positioned between edge of (111) face and cylindrical surface of the growing monocrystal.
EFFECT: production of silicon hollow (tubular) dislocation-free high-purity perfectly structured monocrystals with  orientation.
FIELD: technological process.
SUBSTANCE: invention pertains to growth of monocrystalline silicon layers from a molten mass, and can be used in making solar cells (photoconverters). The device consists of a crucible for melting, a heater, consisting of two heating sections: a square one, the inside of which is fitted with a crucible, and a rectangular one, put over a substrate, a substrate, linked to its displacement mechanism, capillary feeder, bundles of carbon fibres, wound on the tail of the feeder, and a vibrating feeder for supplying crushed silicon. The substrate used is a carbon foil, covered by pyrographite layers. The capillary feeder has an opening for putting in the substrate, and the rectangular heating section is symmetrical about the substrate and has vertical incisions for letting in the substrate.
EFFECT: increased output of the device due to growth of thin silicon layers at the same time on both surfaces of the substrate, due to reduction of the specific consumption of initial silicon due to that, the substrate does not get soaked in the molten mass.
1 ex, 2 dwg
FIELD: technological processes.
SUBSTANCE: method of production of regular systems of nano-size silicon whiskers includes preparation of silicon plate by masking of its surface with photoresist, making holes in it, electrochemical deposition of metal islets into photoresist holes from electrolyte solution, and installation of prepared plate into growth furnace with further growing of silicon whiskers on it, at that cylindrical openings in photoresist are created with diameter of less than 250 nm by means of imprint-lithography, metal islets are deposited with thickness of less than 12.5 nm, after that photoresist is removed in 5% solution of hydrofluoric acid.
EFFECT: method makes it possible to considerably facilitate creation of nano-technological instruments on nano-crystals.
FIELD: metallurgy, crystals.
SUBSTANCE: invention concerns field of semiconducting materials metallurgy and can be used mainly at receiving of substances crystals with fusion temperature, increasing quartz softening temperature, for instance at growing of single-crystal silicon by means of Czochralski growth technique. Method includes location of quartz crucible in compound support, formed by cylinder course and disk, feed stock charging into quartz crucible, mounting of crucible with support into furnace, charging melting, single-crystal seed introduction and single crystal withdrawal from the melt. In particular technique cylinder course is implemented in the form of glass, bottom of which is formed by means of location at support disk layer of the same material, from which it is made cylinder part of course, crucible is located in course with ability of sliding, crucible is installed into furnace in a way that crucible bottom is in area of maximal heating. Melting mode is specified, providing reliable softening of spherical bottom-most part of quartz crucible, crucible is held till melting of charging material, then it is pulled down inside of furnace in position of growing process start and there is fixed single crystal growing mode.
EFFECT: decreasing of cost price of single-crystal silicon at the expense of crucible durability increasing and ability of it multiple additional charging by initial raw materials.
4 cl, 3 dwg