The dc voltage converter

 

(57) Abstract:

Usage: when converting a constant voltage, for example, for a circuit of low power integrated circuits. The essence of the invention: Converter DC voltage containing two MOS transistors 1, 2, one of which 1 has the p-and the other 2 n-channel, two diodes 3, 4, three condenser 5, 6, 7, and four resistor 8-11, improved efficiency due to the introduction of an additional diode 12 and resistor 13 through which is realized a reduction in the resistance of the open MOS transistor 1, and hence the energy loss in it. 1 Il.

The invention relates to electrical engineering and can be used when converting a constant voltage, for example, for a circuit of low power integrated circuits.

Known Converter DC voltage containing two semiconductor switching element connected in series with each other, and status (open, closed) are mutually opposite. A series circuit composed of semiconductor switching elements, connected in parallel with the primary power source. In parallel to each switching items which are charged each capacitor. The main disadvantage of this Converter are large losses of output voltage, which causes a relatively small efficiency.

It is also known device containing two MOS transistors, one of which is p, and the other n-channel, two diodes, two Zener, three capacitor and two resistors, which loads the device, the first conclusions of which is connected to the source with the substrate of a MOS-transistor with n-channel, the anode of the first Zener diode, the cathode of the second Zener diode, the first plates of the second and third capacitors and the negative terminal of input voltage, the positive terminal of which is connected to the source with the substrate of a MOS-transistor with a p-channel the drain of which is connected to the drain of MOS transistor with n-channel and the first plate of the first capacitor, the second plate of which is connected to the cathode of the second diode and the anode of the first diode, the cathode of which is connected to the cathode of the first Zener diode, the second plate of the second capacitor and the second output of the first resistor and the second terminal of the second resistor is connected to the anode of the second diode and the second Zener diode and the second plate of the third capacitor. This Converter enables obtaining two output constant naprawianie efficiency and reliability.

The closest technical solution is the inverter DC voltage containing two MOS transistors, one of which is p, and the other n-channel, two diodes, three capacitor and four resistor, the first two of which are the load device, and the first conclusions is connected to the source of the MOS transistor n-channel, the first plates of the second and third capacitors, the first output of the third resistor and the negative terminal of input voltage, the positive terminal of which is connected to the source with the substrate of a MOS-transistor with a p-channel the drain of which is connected to the first plate of the first capacitor and the drain of MOS transistor n-channel substrate which is connected to the second output of the third resistor and the first output of the fourth resistor, the second terminal of which is connected to the second output of the second resistor, the second plate of the third capacitor and the anode of the second diode, the cathode of which is connected to the second plate of the first capacitor and the anode of the first diode, the cathode of which is connected to the second output of the first resistor and the second plate of the second capacitor. This Converter has good reliability, but a relatively large loss in the open MOS transistor with R the prototype.

The objective of this invention is to increase the efficiency of the device, with the required technical result is achieved by humelsine losses in the outdoor MOS transistor with a p-channel inverter DC voltage containing two MOS transistors, one of which is p, and the other n-channel, two diodes, three capacitor and four resistor, the first two of which are the load, and the first conclusions is connected to the source of the MOS transistor n-channel, the first plates of the second and third capacitors, the first output of the third resistor and the negative terminal of the source of the input voltage, the positive terminal of which is connected to the source of the MOS transistor, p-channel, the drain of which is connected to the first plate of the first capacitor and the drain of MOS transistor n-channel substrate which is connected to the second output of the third resistor and the first output of the fourth resistor, the second terminal of which is connected to the second output of the second resistor, the second plate of the third capacitor and the anode of the second diode, the cathode of which is connected to the second plate of the first capacitor and the anode of the first diode, the cathode of which is connected to the second output of the first resistor and the second plate of the second capacitor, for accounts the cash and the additional anode of the diode, the cathode of which is connected to the second terminal of the additional resistor and the substrate of a MOS-transistor with a p-channel.

By supplying the control signal not only to the gate, but also on a substrate of a MOS-transistor with a p-channel is implemented by parallel connection of the MOS transistor and the bipolar p-n-p transistor, the collector of which is the drain, emitter - source, and the base - substrate included in the structure of a MOS-transistor with a p-channel. Small residual resistance of an open bipolar transistor reduces the static losses of the Converter, which determines the increase of efficiency.

The drawing shows a schematic diagram of the inverter DC voltage, consisting of a MOS transistor with induced p-channel 1, MOS transistor with the induced n-channel 2, two diodes 3 and 4, three capacitors 5, 6 and 7, four resistors 8, 9, 10, 11, additional diode 12 and an additional resistor 13. The negative terminal of the source of input voltage connected to the source of the MOS transistor 2, the first plates of the capacitors 6 and 7, the first terminals of the resistors 8, 9 and 10. The positive terminal of a source of input voltage connected to the source of the MOS transistor 1, the drain of which is connected to the first plate to the 3, the cathode of which is connected to the second capacitor plate 6 and the second output resistor 8. The anode of diode 4 is connected to the second capacitor plate 7 and the second terminals of the resistors 9 and 11. The first of the resistor 11 is connected to the second output of the resistor 10 and the substrate MOS transistor 2. The substrate of MOS transistor 1 is connected to the cathode of diode 12 and the second output resistor 13, the first output of which is connected to the anode of diode 12 and the gate of MOS transistor 1.

The resistors 8 and 9 are loads included in the outputs of the Converter. Control signals for the device are fed to the gates of the power MOS transistors 1 and 2 (as in the second analogue and prototype).

The main part of the proposed device works the same as the prototype. When receiving an enabling signal to the gate of MOS transistor 1 and the locking signal to the gate of MOS transistor 2 is the charge of the capacitor 5 through the open MOS transistor 1, the diode 3 and the resistor 8. While also charging the capacitor 6. When opening the MOS transistor 2 and the closing of the MOS transistor 1, the voltage of the charged capacitor 5 opens the diode 4. The energy of the capacitor 5 is transmitted to the load 9 and the filter capacitor 7. After the regular opening TIR-transeat positive, and at the load 9 is a negative output voltage. To stabilize the output voltage in parallel to the load 8 and 9 can include reference diodes or other stabilizing elements (as is the case in the second analogue and prototype). The negative voltage from the load 9 through the voltage divider made on the resistors 10 and 11, is supplied to the substrate of a MOS-transistor 2, which eliminates the possibility of the development of secondary breakdown in the bipolar structure of the MOS transistor 2 and, therefore, ensures reliable operation of the device.

The main difference between the proposed device is the circuit of the diode 12 and resistor 13, which connects the gate and the substrate of a MOS-transistor 1. Since holes have a lower mobility than electrons, the field-effect transistors with p-channel resistance of the channel in the open state is always greater than that of MOS transistors with n-channel. This determines large losses on open MOS transistor 1, than MOS transistor 2. Using the circuit of diode 12 and resistor 13 is reducing the resistance of the open MOS transistor 1, and hence the energy loss on it.

When applying a negative control voltage to the gate of MOS transistor 1 he to the base (substrate) which is set using limiting resistor 13. Because bipolar transistors in an open state have a resistance substantially less than that of MOS transistors, p-n-p transistor to shunt the entire MOS transistor 1, and this will depend on the reduction of energy losses. Due to the small losses realized increased efficiency of the device.

When applying a positive control voltage to the gate of MOS transistor 1 is closed as well as its p-n-p transistor, the locking voltage to the base (substrate) which is applied through the diode 12.

Experimental verification of the inverter DC voltage was held at the MOS transistors QP, P, P, P and laboratory samples. Compared with the prototype of the proposed device, the observed increase efficiency. Thus, when the switching frequency is 200 kHz, the efficiency of this device has reached approximately to 0.92, whereas in the prototype does not exceed 0,88. (56) the Japan Patent N 49-6610, CL H 02 M 3/14, 1974.

E. M. of Romas high-Frequency transistor converters, M. : Radio and communication, 1988, S. 166, R. 5,24 century

USSR author's certificate N 1729336, CL H 02 M 3/07, 1992.

CONVERTER DC VOLTAGE containing two MOS transistors, one of which has a p-, and their first conclusions is connected to the source of the MOS transistor n-channel, the first conclusions of the second and third capacitors, the first output of the third resistor and the negative input to the output, the positive input, the output is connected to the source of the MOS transistor with a p-channel, the drain of which is connected to the first output of the first capacitor and the drain of MOS transistor n-channel substrate which is connected to the second output of the third resistor and the first output of the fourth resistor, the second terminal of which is connected to the second output of the second resistor, the second output of the third capacitor and the anode of the second diode, the cathode of which is connected to the second output of the first capacitor and the anode of the first diode, the cathode of which is connected to the second output of the first resistor and the second output of the second capacitor, characterized in that an additional diode and resistor, a first output which is connected to the gate of MOS transistor with p-channel and the additional anode of a diode, the cathode of which is connected to the second terminal of the additional resistor and the substrate of a MOS-transistor with a p-channel.

 

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