Energy storage device

FIELD: power engineering.

SUBSTANCE: invention relates to an energy storage device and can be used in electric vehicles. Energy storage device (100) comprises porous conductive substrate (110); insulating layer (120) in contact with inner surfaces (112) of porous conductive substrate (110); and conductive layer (130) in contact with outer surfaces (122) of insulating layer (120), wherein the insulating layer comprises the first electric power storage layer used to store energy in a polarized configuration by supplying voltage to the porous conductive substrate and the conductive layer, besides, the insulating layer comprises the second electric power storage layer configured able to vary between an electrical insulating configuration and an electrically conductive configuration, wherein the transition from the electrical insulating configuration to the electrically conductive configuration occurs in response to supplying a voltage greater than the threshold voltage to the porous conductive substrate and the conductive layer, herewith the second electric power storage layer is an ionized fluid medium, and the electrically conductive configuration is an ionized configuration formed by supplying a voltage equal to or greater than the breakdown voltage of the second electric power storage layer to the second electric power storage layer.

EFFECT: increasing the capacity of the energy storage device by increasing the contact area of the porous conductive substrate with the insulating layer is the technical result of the invention.

44 cl, 7 dwg

 



 

Same patents:

FIELD: physics.

SUBSTANCE: invention relates to microelectronics. An element library based on complementary metal-oxide-semiconductor (MOS) transistors, comprising a p-type substrate and an n-type pocket, n- and p-type MOS transistor active regions, p+ and n+ contacts for the zero potential and supply bus, further includes an extended n+ protection located along the outer boundary of the pocket and which fills the entire free area of the pocket, as well as an annular p+ protection around each of the n-type transistor groups with drain/gate regions of transistors with different potential, which fills the entire free area of the substrate.

EFFECT: creating a radiation-resistant element library based on complementary metal-oxide-semiconductor transistors with a smaller area of elements on the chip and faster operation.

5 dwg

FIELD: physics.

SUBSTANCE: semiconductor infrared source includes a semiconductor substrate (1) with two optically connected and geometrically spaced-apart disc resonators (2) or annular resonators (10) in form of a heterostructure. On the surface of the semiconductor substrate (1) lying opposite the surface with the disc resonators (2) or annular resonators (10) there a first ohmic contact (3). A second ohmic contact (8) is deposited on the face of the corresponding disc resonator (2) or annular resonator (10). The distance from the outer edge of the second contact to the inner edge of the resonator is not more than 100 mcm. The disc resonators (2) or annular resonators (10) lie from each other at a distance L or overlap in the region of waveguides at a depth D, said distance and depth satisfying certain relationships.

EFFECT: simple design and reducing optical loss during single-mode oscillation in the middle infrared spectrum.

2 cl, 14 dwg

FIELD: electricity.

SUBSTANCE: in semiconductor instrument containing sink, source consisting of transistor cells and peripheral p-n junction, which are located under gate electrode, as well as of metal electrode of source, which is located above gate electrode, polysilicon gate electrode insulated from source areas with dielectric, which contains in middle part the matrix of transistor cells and peripheral end part overlapping above the dielectric the source peripheral p-n junction; end part of polysilicon gate electrode, which overlaps above the dielectric the source peripheral p-n junction, is topologically separated from end cell of matrix of transistor cells and not covered with source metal coating.

EFFECT: reducing the resistance of power double-diffused MOS transistors in open state, without increase in the size of crystal and deterioration of other parameters.

2 cl, 3 dwg

Multichannel reader // 2282269

FIELD: optical data processing systems.

SUBSTANCE: proposed multichannel reader built on semiconductor substrate has N input units, multiple-output switching unit, common read-out bus, write bus, pre-processor signal processing unit incorporating comparator, arithmetic-logic device, and memory unit; one of two comparator inputs is designed to apply digital-code signal thereto and is connected to common read-out bus; other comparator input is designed to feed reference signal; comparator output is connected to input of arithmetic-logic device whose output is connected to input of memory unit whose output is coupled with write bus; each input unit is made in the form of amplifier that has input, output, and control input, as well as two MIS transistors; first MIS transistor gate is connected to output of respective cell of multiple-output switching unit and gate, to common read-out bus; second MIS transistor gate is connected to output of next cell of multiple-output switching unit and gate, to write bus; each input unit is provided in addition with K-capacity analog-to-digital converter and L-capacity digital-to-analog converter; first MIS transistor source is connected to output of analog-to-digital converter whose input is connected to amplifier output; second MIS transistor source is connected to input of digital-to-analog converter whose output is connected to amplifier control input; common read-out bus is assembled of K buses, K being equal to capacity of analog-to-digital converter and to number of first MIS transistors connected through their gates to respective outputs of multiple-output switching unit, through drains, to respective buses of common read-out buses, and through sources, to respective inputs of analog-to-digital converters; write bus is assembled of L buses, L being equal to digital-to-analog converter capacity and to number of second MIS transistors connected through drains to respective buses forming write bus, through gates, to output of next cell of multiple-output switching unity, and through sources, to respective inputs of digital-to-analog converter.

EFFECT: extended dynamic range, enhanced speed, enlarged functional capabilities.

1 cl, 1 dwg

The invention relates to a structure oriented on the radio, in particular, to the structure of the CMOS circuits for digital radio transceiver

The invention relates to microelectronics, and more specifically to the development of a complementary bipolar transistor structures in the manufacture of integrated circuits

FIELD: power engineering.

SUBSTANCE: invention relates to an energy storage device and can be used in electric vehicles. Energy storage device (100) comprises porous conductive substrate (110); insulating layer (120) in contact with inner surfaces (112) of porous conductive substrate (110); and conductive layer (130) in contact with outer surfaces (122) of insulating layer (120), wherein the insulating layer comprises the first electric power storage layer used to store energy in a polarized configuration by supplying voltage to the porous conductive substrate and the conductive layer, besides, the insulating layer comprises the second electric power storage layer configured able to vary between an electrical insulating configuration and an electrically conductive configuration, wherein the transition from the electrical insulating configuration to the electrically conductive configuration occurs in response to supplying a voltage greater than the threshold voltage to the porous conductive substrate and the conductive layer, herewith the second electric power storage layer is an ionized fluid medium, and the electrically conductive configuration is an ionized configuration formed by supplying a voltage equal to or greater than the breakdown voltage of the second electric power storage layer to the second electric power storage layer.

EFFECT: increasing the capacity of the energy storage device by increasing the contact area of the porous conductive substrate with the insulating layer is the technical result of the invention.

44 cl, 7 dwg

Multichannel reader // 2282269

FIELD: optical data processing systems.

SUBSTANCE: proposed multichannel reader built on semiconductor substrate has N input units, multiple-output switching unit, common read-out bus, write bus, pre-processor signal processing unit incorporating comparator, arithmetic-logic device, and memory unit; one of two comparator inputs is designed to apply digital-code signal thereto and is connected to common read-out bus; other comparator input is designed to feed reference signal; comparator output is connected to input of arithmetic-logic device whose output is connected to input of memory unit whose output is coupled with write bus; each input unit is made in the form of amplifier that has input, output, and control input, as well as two MIS transistors; first MIS transistor gate is connected to output of respective cell of multiple-output switching unit and gate, to common read-out bus; second MIS transistor gate is connected to output of next cell of multiple-output switching unit and gate, to write bus; each input unit is provided in addition with K-capacity analog-to-digital converter and L-capacity digital-to-analog converter; first MIS transistor source is connected to output of analog-to-digital converter whose input is connected to amplifier output; second MIS transistor source is connected to input of digital-to-analog converter whose output is connected to amplifier control input; common read-out bus is assembled of K buses, K being equal to capacity of analog-to-digital converter and to number of first MIS transistors connected through their gates to respective outputs of multiple-output switching unit, through drains, to respective buses of common read-out buses, and through sources, to respective inputs of analog-to-digital converters; write bus is assembled of L buses, L being equal to digital-to-analog converter capacity and to number of second MIS transistors connected through drains to respective buses forming write bus, through gates, to output of next cell of multiple-output switching unity, and through sources, to respective inputs of digital-to-analog converter.

EFFECT: extended dynamic range, enhanced speed, enlarged functional capabilities.

1 cl, 1 dwg

FIELD: electricity.

SUBSTANCE: in semiconductor instrument containing sink, source consisting of transistor cells and peripheral p-n junction, which are located under gate electrode, as well as of metal electrode of source, which is located above gate electrode, polysilicon gate electrode insulated from source areas with dielectric, which contains in middle part the matrix of transistor cells and peripheral end part overlapping above the dielectric the source peripheral p-n junction; end part of polysilicon gate electrode, which overlaps above the dielectric the source peripheral p-n junction, is topologically separated from end cell of matrix of transistor cells and not covered with source metal coating.

EFFECT: reducing the resistance of power double-diffused MOS transistors in open state, without increase in the size of crystal and deterioration of other parameters.

2 cl, 3 dwg

FIELD: physics.

SUBSTANCE: semiconductor infrared source includes a semiconductor substrate (1) with two optically connected and geometrically spaced-apart disc resonators (2) or annular resonators (10) in form of a heterostructure. On the surface of the semiconductor substrate (1) lying opposite the surface with the disc resonators (2) or annular resonators (10) there a first ohmic contact (3). A second ohmic contact (8) is deposited on the face of the corresponding disc resonator (2) or annular resonator (10). The distance from the outer edge of the second contact to the inner edge of the resonator is not more than 100 mcm. The disc resonators (2) or annular resonators (10) lie from each other at a distance L or overlap in the region of waveguides at a depth D, said distance and depth satisfying certain relationships.

EFFECT: simple design and reducing optical loss during single-mode oscillation in the middle infrared spectrum.

2 cl, 14 dwg

FIELD: physics.

SUBSTANCE: invention relates to microelectronics. An element library based on complementary metal-oxide-semiconductor (MOS) transistors, comprising a p-type substrate and an n-type pocket, n- and p-type MOS transistor active regions, p+ and n+ contacts for the zero potential and supply bus, further includes an extended n+ protection located along the outer boundary of the pocket and which fills the entire free area of the pocket, as well as an annular p+ protection around each of the n-type transistor groups with drain/gate regions of transistors with different potential, which fills the entire free area of the substrate.

EFFECT: creating a radiation-resistant element library based on complementary metal-oxide-semiconductor transistors with a smaller area of elements on the chip and faster operation.

5 dwg

FIELD: electricity.

SUBSTANCE: thin-film transistor TFT includes a gate, a first insulating layer located above the gate, a second insulating layer located above the first insulating layer, a semiconductor layer, a source and a drain, located between the first insulating layer and the second insulating layer, an ohmic contact layer located between the semiconductor layer, the source and the drain, the ohmic contact layer including an opening passing through the ohmic contact layer by means of a gap between the source and the drain in order to open the semiconductor layer, and the second insulating layer is connected to the semiconductor layer through this opening, and a conductive layer located above the second insulating layer. The conductive layer and the gate are electrically connected to each other, so that when the TFT is in the on-state, the switching current generated in the conductive channels of the semiconductor layer is increased. When the TFT is in the off-state, the tripping current generated in the conductive channels is reduced.

EFFECT: the ratio of the making current to the tripping current is increased.

15 cl, 6 dwg

FIELD: power engineering.

SUBSTANCE: invention relates to an energy storage device and can be used in electric vehicles. Energy storage device (100) comprises porous conductive substrate (110); insulating layer (120) in contact with inner surfaces (112) of porous conductive substrate (110); and conductive layer (130) in contact with outer surfaces (122) of insulating layer (120), wherein the insulating layer comprises the first electric power storage layer used to store energy in a polarized configuration by supplying voltage to the porous conductive substrate and the conductive layer, besides, the insulating layer comprises the second electric power storage layer configured able to vary between an electrical insulating configuration and an electrically conductive configuration, wherein the transition from the electrical insulating configuration to the electrically conductive configuration occurs in response to supplying a voltage greater than the threshold voltage to the porous conductive substrate and the conductive layer, herewith the second electric power storage layer is an ionized fluid medium, and the electrically conductive configuration is an ionized configuration formed by supplying a voltage equal to or greater than the breakdown voltage of the second electric power storage layer to the second electric power storage layer.

EFFECT: increasing the capacity of the energy storage device by increasing the contact area of the porous conductive substrate with the insulating layer is the technical result of the invention.

44 cl, 7 dwg

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