Broadband multiport klystron with a multilink filter system
SUBSTANCE: invention relates to multipath klystrons used as power amplifiers of electromagnetic waves of centimeter and millimeter wavelength ranges. Design of low-voltage multipath broadband klystron contains n (n = 1, 2, 3, …, n) passive frequency tunable resonators, located outside the vacuum part of the klystron in the output of microwave energy or in the input and output of microwave energy and containing: passive resonator from a vacuum-dense dielectric microwave window, made in the form of a waveguide-dielectric resonator, which is formed by a section of a waveguide with dielectric filling in the form of a dielectric rod sealed in the waveguide channel, dimensions of the waveguide-dielectric resonator correspond to the condition of approximate equality of its resonant frequency to the upper frequency of the klystron gain band ƒB; passive resonator from a rectangular waveguide with dielectric inhomogeneity in the form of a dielectric rod exciting the waveguide and being extension of the dielectric rod sealed in the waveguide channel; passive resonators from tuning pins, one of which is installed in the middle of a wide wall of a rectangular waveguide in the immediate vicinity of the end part of the dielectric rod, and at least one more resonant pin, which is set at a distance S from the axis of the first not less than a quarter of the wavelength at the frequency ƒB, pins being configured to change their length, allowing the rectangular waveguide with a dielectric discontinuity to be tuned and tuning pins at the resonant frequency of the active resonator or with a specified detuning from this frequency, which provides a predetermined difference in the transmission power of the microwave power in the operating band of the klystron frequencies from the input path to the active resonator input and from the output active resonator to the output path.
EFFECT: expansion of the amplification band without increasing the size and weight of the input and output resonator systems of the low-voltage multipath broadband klystron.
6 cl, 4 dwg
SUBSTANCE: multibeam microwave device of O-type comprises an electron gun, an energy input and output, a collector and an electrodynamic system, comprising input, output and intermediate active resonators, the first output passive resonator, electromagnetically connected to the output active resonator. The input, output and intermediate active resonators are made in the form of sections of wave guides with a working type of oscillations H301, in each input, output and intermediate active resonator for passage of electronic beams there are three groups of individual drift tubes. Drift tubes of each group have axial-symmetrical placement in the form of at least one circular row, and the diameter of the circumference D, which limits the external circular row of drift tubes of each group is selected on the basis of the condition D=(0.32÷0.42)λ, where λ - wave length corresponding to the central frequency of the working band of the device.
EFFECT: higher pulse and average output capacity in wide band of frequencies with sufficient electric strength, higher efficiency factor.
8 cl, 6 dwg
SUBSTANCE: proposed klystron comprises spatially developed resonant systems, which are evenly arranged in the form of a fan in radial direction around the axis of symmetry of the klystron, with holes for electromagnet connection between active sector resonators. Each active sector resonator has through tubes that are arranged at the same distance from the klystron axis and are fixed on the central conductors, which are fixed on a "П"-shaped pedestal arranged on the inner cylindrical wall and having direct contact with two side covers. Metal pins passing through holes arranged in the inner cylindrical wall of active resonators are fixed in the lower part of the pedestal and are located at one axis with central conductors.
EFFECT: simplified system of microwave energy input and output, expansion of working frequency band, and also simplified manufacturing of active resonators tuned for various frequencies, design of which makes it possible to achieve multiplication factor of two ratios of the first higher cophased type of oscillations frequencies to the main antiphased one.
4 cl, 3 dwg
FIELD: physics; radio.
SUBSTANCE: invention concerns electronic engineering, in particular to the electrovacuum microwave devices intended for reception of microwave capacity on two multiple frequencies also can be used, for example, in the accelerating technics, radar-location, radio countermeasure. The klystron-type microwave device contains the cylindrical target double-gap cavity (TDC), adjusted on an antiphase kind of fluctuations with an operating frequency co and on an inphase kind of fluctuations with an operating frequency 2ω. The device for microwave energy output contains, at least, two square-topped wave guides, connected with the TDC accordingly through the first and second coupling windows. The first coupling window is located between face walls of the target double-gap cavity equally spaced from them and allocated from a communication slot in a TDC conducting plate. The second coupling window is located from a continuous site of the conducting plate and located between the conducting plate and one of face walls of the output TDC opposite to corresponding high-frequency spacing. The sizes of wide walls of square-topped wave guides are chosen from the set conditions. The microwave device can contain a band elimination filter connected to the second square-topped wave guide.
EFFECT: increase of efficiency and expansion of functionality of the microwave device.
7 cl, 6 dwg
SUBSTANCE: invention is related to electronic microwave equipment, namely to powerful wide band microwave devices of O-type, for instance, to multiple-beam klystrons that mostly operate in medium and short-wave part of centimeter range of waves length. Microwave device of O-type consists of sequentially installed along its axis electron gun, active resonators in the form of wave conductors segment and collector. Active resonators are made as stepwise changing in height, where height is the distance along microwave device axis between end walls of active resonator. In active resonator floating-drift tubes are installed linearly in rows and are fixed in its opposite end walls, and ends of coaxially installed floating-drift tubes are separated by permanent high-frequency gap. Central rows of floating-drift tubes are installed in sections of active resonators with the least height, and subsequent rows of floating-drift tubes that are installed along both sides of central rows, are installed in sections of active resonators with higher heights. It is also suggested to use inlet and outlet active resonator with non-symmetric installation of floating-drift tubes relative to opposite side walls of these resonators. Inlet active resonator may be connected to energy input directly through inlet wave conductor or through inlet passive resonator and inlet wave conductor. Outlet active resonator may be connected with energy output directly through outlet wave conductor or through one or several outlet passive resonators and outlet wave conductor.
EFFECT: increase of efficiency factor at the account of improvement of electric field distribution uniformity in the sphere of electronic flow interaction with microwave field.
12 cl, 5 dwg
FIELD: multirange microwave devices for radar stations.
SUBSTANCE: proposed multirange O-type device used for radar stations to replace separate devices for each range thereby simplifying station design and reducing its cost is assembled of electrodynamic systems disposed along electron beam and isolated from each other by conducting disks with drift tubes. Each electrodynamic system is provided with energy input and output. Operating-range wavelength of electrodynamic system rises in direction of electron beam motion and ratio of electrodynamic system diameter to this wave reduces in same direction. Transit-time channel diameter remains constant or increases from system to system in direction of electron beam motion.
EFFECT: enhanced self-excitation resistance, reduced probability of current lowering, minimized size and mass.
1 cl, 1 dwg
FIELD: microwave engineering; high-power broadband multibeam devices such as klystrons.
SUBSTANCE: proposed O-type device has two multibeam floating-drift tubes in each active resonator with operating wave mode H201, diameter D of each tube being chosen from condition D = (0.4 0.45)λ, where λ is wavelength corresponding to center frequency of device operating band. Input and output active resonators with floating-drift tubes asymmetrically disposed relative to opposite walls of these resonators are proposed for use. Input active resonator can be connected to energy input directly or through input waveguide, or through input passive resonator and input waveguide. Output active resonator can be connected to energy output through one output passive resonator and output waveguide or through two output passive resonators and input waveguide. Two multibeam floating-drift tubes are disposed in each active resonator including intermediate ones.
EFFECT: enhanced output power, efficiency, and practical feasibility, simplified design, facilitated manufacture, assembly, and adjustment of device.
11 cl, 4 dwg
SUBSTANCE: invention relates to cooling systems, in particular, for cooling of lights. A cooling plant (100) is proposed, which comprises a source electrode (102), the first and second electrodes-targets (104, 106), arranged at the distance from the source electrode (102), and a control circuit for control of voltage applied between the source electrode (102) and at least one of the first and second electrodes-targets (104, 106). Voltage is controlled in such a manner that they adjust air flow produced as a result of potential difference between the source electrode (102) and at least one of the first and second electrodes-targets (104, 106), so that their direction changes in turns. With the help of invention one may provide for cooling of a device, having similar or better operating characteristics compared to a regular system with heat release and a fan, but with smaller dimensions and weight, and also with absence of noise.
EFFECT: higher compactness and elimination of noise during work.
15 cl, 4 dwg
SUBSTANCE: accelerating structure (AS) comprises coaxially arranged accelerating resonators not connected to each other, besides, each resonator has a linkage diaphragm for input of microwave capacity, a throughput resonator with high internal Q, having output diaphragms by number of accelerating resonators included into the AS, every of which is combined with a linkage diaphragm of an appropriate accelerating resonator, and an input diaphragm for input of microwave capacity from a generator, besides, coefficients of transfer of specified diaphragms meet the following ratios: T1=[1+(T0/T-T/T0)2/4]-1/2; T<T0, where T and T1 - coefficients of transfer of accordingly output and input diaphragms of a throughput resonator. T0 - coefficient of transfer of a linkage diaphragm of an accelerating resonator, when no throughput resonator is available.
EFFECT: reduced size of a hole in linkage diaphragms of accelerating resonators of an accelerating structure and thus their reduced impact at a structure of an accelerating field, critical connection with a supply wave guide remains.
3 cl, 2 dwg, 1 tbl
SUBSTANCE: manufacturing method of cast target for magnetron sputtering from molybdenum-based alloy and target obtained using the above method is proposed. Method involves obtaining of an ingot of alloy on the basis of molybdenum. First, high-purity polycrystalline molybdenum ingot is obtained by means of deep vacuum refining by electron-beam drip re-melting of a workpiece made from high-purity molybdenum; after that, arc vacuum remelting of high-purity polycrystalline molybdenum ingot is performed with strips from high-purity monocrystalline silicon; at that, the number of strips is chosen from the condition for obtaining polycrystalline alloy ingot with composition of molybdenum - 0.005-1.0 wt % of silicon, which is subject to machining.
EFFECT: improving the quality of semiconductor devices and integral circuits due to improvement of chemical resistance of films, as wells as stability of value of transient resistance of contacts at heat treatment.
2 cl, 2 tbl, 1 ex
SUBSTANCE: manufacturing method of cast target for magnetron sputtering from tantalum-based alloy and target obtained using the above method is proposed. Method involves obtaining of an ingot of alloy on the basis of tantalum. First, tantalum ingot of high purity degree is obtained by means of deep vacuum refining by electron-beam drip re-melting of a workpiece made by pressing of high-purity tantalum powders; besides, ingots of intermetallic compounds TaFe2 and YFe3 are obtained by melting of tantalum with iron and yttrium with iron; after that, arc vacuum remelting of high-purity tantalum ingot with ingots of intermetallic compounds TaFe2 and YFe3 is performed at their ratio, wt %: TaFe2 3.0-10.0, YFe3 0.3-3.0, Ta - the rest; ingot of tantalum-based alloy with composition of Ta + 1 wt % Fe + 0.1 wt % Y is obtained and subject to machining.
EFFECT: improving the quality of sputtered targets in order to increase the yield ratio of thin-film capacitors.
2 cl, 1 tbl, 1 ex
SUBSTANCE: manufacturing method of composite target for obtaining films by magnetron sputtering and target obtained using the above method is proposed. Method involves manufacture of disc from polycrystalline titanium ingot obtained by multiple vacuum titanium re-melting, drilling of holes in staggered order in sputtered zone of titanium disc along two concentric circles and fixture of cylindrical inserts in them. Cylindrical inserts are made by cutting of ingots of monocrystalline tungsten and monocrystalline rhenium, which have been obtained by multiple vacuum remelting of tungsten and rhenium. Inserts attachment is performed by press fitting to drilled holes at the ratio of surface areas occupied with tungsten and rhenium inserts on surface of target in titanium disc providing the production of films consisting of the following, wt %: titanium 2.5-37.0, rhenium 0.04-9.78, and tungsten is the rest.
EFFECT: improving reliability and process barrier layers due to decreasing mechanical stresses and improving homogeneity of metal coating.
2 cl, 1 tbl, 1 ex
SUBSTANCE: manufacturing method of composite target for obtaining films by magnetron sputtering and target obtained using the above method is proposed. Method involves manufacture of disc from polycrystalline titanium ingot obtained by multiple vacuum titanium re-melting, drilling of holes in staggered order in sputtered zone of titanium disc along two concentric circles and fixture of cylindrical inserts in them. Cylindrical inserts are made by cutting of ingots of monocrystalline tungsten and monocrystalline silicon, which have been obtained by multiple vacuum remelting of tungsten and silicon. Inserts attachment is performed by press fitting to drilled holes at the ratio of surface areas occupied with tungsten and silicon inserts on surface of target in titanium disc providing the production of films consisting of the following, wt %: silicon 0.1-1.3, titanium 11-33, and tungsten is the rest.
EFFECT: increasing thermal stability of metal coating and reproducibility of its formation process.
2 cl, 1 tbl, 1 ex
SUBSTANCE: invention relates to non-ferrous metallurgy, namely to production of sputtering molybdenum targets and can be used in microelectronics to apply coatings by thin-film metallisation. The method involves a consistent deep vacuum refining by electron-beam remelting of a high-purity metal-ceramic bar obtaining monocrystalline or polycrystalline molybdenum. Whereupon a semi-finished target shaped as a monocrystalline or polycrystalline ingot is formed from the obtained product using electron-beam remelting in the horizontal or vertical mold. The ingot produced is then machined.
EFFECT: improved quality and reliability of the barrier and conducting films when sputtering cast high-purity molybdenum targets.
3 cl, 1 dwg, 1 ex
SUBSTANCE: it is implemented deep vacuum refinement by multiple remelting of tungsten and titanium with receiving of polycrystalline ingots of titanium and tungsten monocrystal. Then from the polycrystalline ingot of titanium it is manufactured disk, in which in diffusing area per two concentric circles alternate there are bored holes and by press fit there are fixed in it cast cylindrical inserts from tungsten monocrystal, preliminarily subject to grinding and cutting per exact lengths. Target, recived by mentioned method, consists of cast disk made of high-clean titanium and cast cylindrical inserts made of high-clean monocrystalline tungsten, located in diffusing area of disk by two concentric circles alternate. Additionally area ratio on surface of target, taken up by tungsten and titanium, provides receiving of films at magnetron sputtering composition 35-40 wt % of titanium, tungsten is the rest.
EFFECT: improving and reliability growth of applied films of barrier plate tungsten - titanic alloy.
3 cl, 4 dwg, 1 ex
SUBSTANCE: tight block switching fixtures represent welded components with separate tight leadouts incorporating rigid conducting terminal extenders with a flat flange while coaxial tight leadouts incorporate flexible terminal extenders fitted on the rods arranged on the surface of ceramic plates in rows with the difference in height of top points of the flexible conducting terminal extenders between the first and every subsequent row h defined from the formula h=l·sinα, where l is the distance between the first and each subsequent row and α is the angle of inclination of a plane of the contact between the top points of the aforesaid flexible conducting terminal extenders to the ceramic plate plane. The terminal block comprises also cylindrical extender sleeves with tabs arranged on both end faces. Note that the said tabs of the lower end face are bent along the radius by the angle of 90° outward from the sleeve axis of symmetry. Note also that, at the top end face, the said tabs are vent two times by 90° towards the aforesaid axis of symmetry of the sleeve. To weld the aforesaid fixtures, a pulsed laser radiation makes a heating source.
EFFECT: high level of technological and operational properties of proposed tight block.
2 cl, 1 dwg
FIELD: thin-film technology; electronic, atomic, and other fields of science and technology.
SUBSTANCE: proposed mosaic target designed for applying multicomponent film coatings has matrix and fusible components disposed in its depressions. Fusible components are placed in matrix in the form of powders having different density and surface area, dependencies between them being governed by properties of elements and stoichiometric coefficients or percentage of film material components. Method for manufacturing claimed target is also proposed.
EFFECT: enhanced quality of composite coatings.
2 cl, 2 dwg, 2 tbl
FIELD: magnetron anodes.
SUBSTANCE: anode 6 is surrounded by central cathode 1 and is has segmental mechanical design using plurality of circular segments 9 stacked together over its length. Each circular segment 9 has binder 10, all these binders being actually distributed along entire axial length of anode blades 8. Such mechanical design provides for dividing oscillation modes even in case of long anode and, consequently, enables operation in applications responsible for high power. In addition, segmental design of anode makes it possible to obtain mechanically ribbed structure resistant to mechanical impacts.
EFFECT: enlarged functional capabilities.
19 cl, 11 dwg