Radical transferring unit and method
SUBSTANCE: unit includes a plasma generator and a guide body. The plasma generator includes a chamber (2), in which a plasma can be formed. The chamber has an inlet (5) for receiving the introduced gas and one or more outlets (6) for removing, at least, one of the plasma and the radicals created therein. The guide body is hollow and configured to direct the radicals formed in the plasma to a region or volume, in which the deposition of contamination is to be removed. The chamber inlet is connected to a pressure device (40) to provide pulsating pressure in the chamber so as to create a flow in the guide body.
EFFECT: increasing the removal efficiency of contaminants.
21 cl, 13 dwg
FIELD: process engineering.
SUBSTANCE: invention relates to devices for microwave plasma processing and can be used for production of solid-state devices of micro- and nanoelectronics, high-power discrete solid-state electronic devices, substrates for the latter operated under extreme conditions. Flat spiral antenna is used to feed microwave power into reaction-discharge chamber to fire the plasma to be used for processing purposes. Additionally, this device incorporates second flat spiral microwave antenna to heat the processed plate.
EFFECT: efficient feed of energy to silicon plate, efficient process control.
FIELD: technological processes.
SUBSTANCE: device for ion treatment of internal surfaces of millimetre range items is designed for application of internal electroconductive coating from expensive materials with low specific resistance, where thickness of skin layer must be 3…4 mcm. The device comprises a source of ions (2), which is placed in a tight volume created between the processed item (1) and end flanges (5, 14). In end flanges (5) and (14) there are reverse switches installed (16). Electrodes of electric arc (3) of the ion source are equipped with attachments (4) from implanted metal. In the end flange (5) there is a sliding stem (6), which moves the ion source with the help of a controlled electric drive (7) of event displacement, the control inlet of which is connected with the outlet of a comparison unit (9), one inlet of which is connected with a unit (8) of electronic processing software, its other inlet is connected with the outlet of an equivalent charge meter (10), differential inputs of which are connected with a metering resistor (12), connected between sliding contacts (11), mechanically connected with the stem (6) and a minus terminal of a power supply unit (13), the plus terminal of which is connected to one electrode (3) of electric arc and with one of AC outlets of the power supply unit, the other outlet of AC voltage via a spiral-shaped wire (15), placed in a flange (14), is connected to the other electrode of electric arc. In process of item treatment the ion source (2) reaches the reverse switch (16) on the flange (5), switches it on, as a result of which reverse of the electric drive (7) takes place, and the ion source 2 starts moving backwards from the flange (5) to the flange (14).
EFFECT: increased quality of treated surfaces due to the fact that an electric drive provides for even displacement of an ion source along treated surface.
FIELD: test engineering.
SUBSTANCE: power of the primary arc discharge, burning in the gap between the electrodes, is carried out using the voltage equal to the voltage of the on-board cable network of the spacecraft, and initiation of the discharge is carried out by electrical breakdown of the gap with high-voltage potential impulse, the duration of which does not exceed the time of passage by the plasma front of the distance from the site of initiation of discharge to the extreme point of the electrodes, facing the test element.
EFFECT: increase in reliability of testing of the elements of communications-electronics equipment to resistance to arcing when failure of electrical radio engineering product inside the communications-electronics equipment, which leads to initiation of the primary arc discharge, and can lead to secondary self-sustaining arcs when insufficient resistance of the test element of the equipment.
SUBSTANCE: in a plasma generator according to the first version of realisation, comprising a spiral coil, placed inside a conducting screen, the inner surface of which has a shape close to cylindrical one, besides, the space between turns of the coil and between the coil and the screen is filled with a dielectric, the coil is made as flat, the distance from the plane of the coil to the outer surface of the dielectric is less than the doubled thickness of the coil, and the distance from the plane of the coil to the base of the inner surface of the screen is more than the doubled distance from the plane of the coil to the outer surface of the dielectric. In the plasma generator in accordance with the second version of realisation the coil is made flat, the screen is made in the form of a ring, the axis of which is perpendicular to the plane of the coil, the edge of the ring facing the volume, in which it is required to create plasma, is closed with the dielectric. In the plasma generator according to the third version of realisation the screen is electrically connected to one of the ends of the coil, and the dielectric permeability of the dielectric is within 2.5 - 50.
EFFECT: higher efficiency of a device; higher reliability of device operation, higher purity of plasma medium and increased density of generated plasma; increased service life of a device, reduced level of noise, reduced dimensions of a device.
33 cl, 7 dwg
FIELD: machine building.
SUBSTANCE: proposed device comprises two coaxial electrodes of spark discharger arranged in encased spraying chamber. Piston with flange is aligned with said discharger. Revolving axle from current conducting material is arranged along piston axis of symmetry, spark discharger central electrode is arranged on bottom end of said axle. Shear is made on outer cylindrical surface on said electrode. It comprises also blade from dielectric material with two cutting edges arranged in plane perpendicular to rotational axis and inclined to the plate of rotation. Spark discharger second annular electrode made up of sidewalls of cup with sample and arranged on rod to vertically displace inside the case. Note here that said cup has double walls: outer wall from dielectric material and inner wall from metal with vertical slit.
EFFECT: controlled feed rate.
2 cl, 1 dwg
SUBSTANCE: specimen preparation device includes chamber on which displacement mechanisms are installed, which are made in the form of metal bellows connected to handwheels in which there installed through ceramic insulators are high-voltage current leads located in a circumferential direction in 120 degrees, and they represent cathode, high-voltage electrode and thermocouple. Chamber is equipped with thermal screen connected to high-voltage electrode. Screen is installed on specimen movement axis and holder with investigated specimen is introduced to its cavity. Besides, screen is equipped with slots for input of thermocouple.
EFFECT: improving quality of specimen preparation for investigations.
FIELD: technological processes.
SUBSTANCE: method for production of composite target for magnetron spraying includes deep vacuum refining by multiple remelting of components, manufacturing of disk, in which in sprayed zone, along two concentric circumferences holes are drilled, and cylindrical inserts are fixed in it by means of press fit, polycrystalline flat bar of molybdenum is produced, disk with holes is made from it, where cylindrical inserts are fixed made of single crystals of vanadium and rhenium. Composite target for magnetron spraying is produced by above specified method and consists of cast disk and cast cylindrical inserts arranged in sprayed zone of disk along two concentric circumferences in staggered order, disk is made of polycrystalline molybdenum and comprises cast cylindrical inserts made of monocrystalline vanadium and rhenium. In composite target ratio of areas on surface of target occupied with vanadium, rhenium, molybdenum, so that as a result of spraying films are produced with the following composition: 12-50 wt % of vanadium, 3.5-27 wt % of rhenium, the rest - molybdenum.
EFFECT: improved quality and reliability of contact-barrier films in integral circuits.
3 cl, 1 tbl, 1 ex
FIELD: technological processes.
SUBSTANCE: invention relates to the field of production of sprayed metal targets for microelectronics. Method for production of sprayed target on the basis of highly pure transition metal from the following range: titanium, vanadium, cobalt, includes serial deep vacuum refining of highly pure metal-ceramic stock by electronic beam drop remelting to produce bar of highly pure transition metal, formation of target stock in the form of bar by arc vacuum remelting with simultaneous alloying with silicon within the limits of 0.0005-0.15 wt % in vertical crystalliser in process of intense electromagnet mixing of hardening melt, and further produced stock is mechanically treated. Sprayed target of highly pure alloy on the basis of transition metal from the following range: titanium, vanadium, cobalt, contains transition metal and silicon, at the following ratio of specified components, wt %: silicon - 0.005-1.0 and metal from the following range: titanium, vanadium, cobalt - the rest.
EFFECT: improved quality and reliability of barrier and conducting films of disilicides of refractory metals.
3 cl, 1 tbl
SUBSTANCE: invention relates to nonferrous metals metallurgy field and can be used at manufacturing of sputtering metallic targets for application of thin-film metallization super large scale integration circuit of different purposes in microelectronics. Manufacturing method of sputtering target consists in usage of liquid-phase synthesis of silicon components and refractory metal for receiving of stoichiometric disilicides of refractory metals optimal structure and as-cast composition (not in the form of powders). Then it is implemented magnetron sputtering of framework-specific target, providing films formation of disilicide with required composition. Method proposes, that in disilicide ingots silicon content corresponds to eutectic concentration. Facility for method implementation contains target from silicon components and refractory metal, additionally, sputtered cylindrical or rectangular plate of target corresponds mosaic structure, gathered from ingots of high-clean disilicide of refractory metal, fixed on the copper basis by means of ultrasonic brasing. Facility also can consist of one or several disilicide ingots of refractory metal of cylindric section, if sputtering is implemented by point source (laser, electronic beam).
EFFECT: improvement and increasing of reliability of barrier and conducting films of disilicide of refractory metal (Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Ni, Co) by means of usage for sputtering high purity cast materials.
4 cl, 4 tbl, 2 dwg
SUBSTANCE: invention concerns devices for generation of emission, generation of ultraviolet photo impulses with possible amplitude and time adjustment within wide frequency band, particularly from nanosecond long impulses to continuous emission. Device includes sealed bulb with light-transparent outlet port with cathode and anode inside. UV emission sensor is installed outside the bulb close to the port. UV emission source is positioned on light-transparent port inside the deaerated bulb. Focusing electrode, accelerating electrode and turnoff electrode are positioned in sequence between anode and cathode, so that anode, and focusing and accelerating electrodes are connected to high voltage source, while turnoff electrode is connected to turnoff voltage source, cathode is earthed to device case over cathode current control circuit, and cathode heater is connected to cathode heating source. UV emission sensor, high voltage source, turnoff voltage source and cathode power source are connected to controller processor. Large-band ion crystals (such as CaF2, BaF2, BeO etc.) or heterostructures based on III-N compounds (such as AlGaN etc.) can be applied as UV emission source.
EFFECT: device for generation of ultraviolet photo impulses, enabling reproduction of signals of various physical processes and phenomena accompanied by ultraviolet irradiation.
3 cl, 1 dwg
SUBSTANCE: ion implantation method involves formation of plasma inside a working chamber and supplying pulsed acceleration voltage. According to the invention, implantation is carried out from pulsed laser plasma containing multicharged ions. Pulsed acceleration voltage is applied either across a substrate or across a target, wherein the delay between the laser pulse and the pulse of acceleration voltage is determined using a calculation formula which links the distance from the target to the substrate, the centre-of-mass velocity of components with maximum charge, temperature of the ion components with maximum charge, mass and Boltzmann constant.
EFFECT: wider range of implanted substances and selective implantation of muticharged ions.
4 cl, 2 ex
SUBSTANCE: invention relates to a device and a method of changing properties of a three-dimensional formed component (2) using electrons, having an electron accelerator (3a; 3b) for generating accelerated electrons and two electron outlet windows (5a; 5b). Both electron outlet windows (5a; 5b) are opposite each other. Both electron outlet windows (5a; 5b) and a reflector (7a1; 7a2; 7b1; 7b2) bound the process chamber in which the surface or outer layer of the formed component (2) is bombarded with electrons. Energy density distribution in the process chamber is recorded from spatial measurement using a sensor system.
EFFECT: uniform modification of the entire surface or outer layer of a formed component, increased efficiency of the installation.
25 cl, 3 dwg
SUBSTANCE: invention relates to a device for implantation of nitrogen ions into a component (5) made from aluminium alloy and a method of treating aluminium alloy. The device has an ion source (6), which supplies nitrogen ions which are accelerated by extraction voltage, and first apparatus (7-11) for regulating the initial beam of ions (fl'), emitted by said source (6), with formation of an implanting beam (fl). The source (6) is based on electron cyclotron resonance, which produces the initial beam (fl') of polyenergetic ions, which are implanted into component (5) at temperature below 120°C. Implantation of these polyenergetic ions of the implanting beam (fl), regulated using said control apparatus (7-11), takes place simultaneously at a depth which is regulated by extraction voltage of the source. Invention allows for improving mechanical properties of the component.
EFFECT: invention can be used in plastic treatment during mould construction from aluminium alloy.
16 cl, 3 dwg
FIELD: physics; engineering procedures.
SUBSTANCE: resist layer within at least separate areas is adjoined by conductor layer which when resist is electron ray exposed, scatter primary electrons and/or emits secondary electrons. During method realisation resist layer material and conductor layer material, as well as exposure parameters are matched so that resist layer is exposed out of electronic beam exposure area as well, thus relief pattern produced in such a way has relief elements with inclined side ends.
EFFECT: method allows for simple way of relief pattern formation, which elements have gently sloping surface with acute angle of 89° raise; creates gently sloping patterns of hologram-type.
22 cl, 27 dwg, 1 ex
SUBSTANCE: method includes forming a near-field mask on the surface of a dielectric substrate and irradiating the obtained structure with a femtosecond laser pulse. The laser radiation is first passed through a nonlinear optical crystal with a coefficient of transformation into a second harmonic equal to 5-7%. The dielectric substrate coated with the near-field mask is irradiated with the obtained bichromatic femtosecond pulse with energy density in the range of 25-40 mJ/cm2, which is less than the laser radiation energy density normally used in similar nanopatterning.
EFFECT: high resolution and low laser radiation energy consumption.