Method of manufacturing multi-element ir photodetector
SUBSTANCE: multi-element photodetector based on indium antimonide includes a photosensitive element matrix (FSEM) with an antireflection coating on the illuminated side of photosensitive elements (FSE) connected by microcontacts to the readout circuit. The proposed method includes passivation of the illuminated surface of the FSE before the formation of an antireflection coating, which consists in that before removal of the antireflection coating from the FSE surface by ionic etching, the oxide layer is removed without depressurization of the vacuum chamber, which reduces the rate of surface recombination of the photogenerated carriers and thereby increases the quantum efficiency and eliminates the capture of carriers by slow states.
EFFECT: increasing the sensitivity, improving the uniformity of the photodetector array parameters in mass production by improving the quantum efficiency of the photosensitive elements.
3 cl, 1 dwg
SUBSTANCE: method of obtaining sensitive element of thermal receiver matrix based on vanadium oxide represents application of vanadium metal film and electrodes by methods of magnetron dispersion and further lift-off lithography on dielectric substrate. After that, high-density electric current is passed through vanadium metal film, which results in its heating and thermal oxidation. After structure heating and formation of oxide VOx, current isswitched off, and cooling of formedthin-filmed element takes place.
EFFECT: invention makes it possible to considerably simplify method of manufacturing sensitive element of thermal receiver matrix.
2 cl, 1 dwg
SUBSTANCE: PbSnSe substitution solid solution films are highly requested by solid-state electronics and middle and far infrared lasers. However, the current tin content in hydrochemically synthesised PbSnSe films cannot provide their far infrared light-sensitivity completely. According to the making PbSnSe substitution solid solution films by ion exchange process, -prepared PbSe films are processed in an aqueous solution of tin (II) salt solution containing soluble acetate or acetic acid in an amount of 6.0 mole/l or less at a process temperature of 353-371 K that is followed by the air treatment at a temperature from 523 to 723 K.
EFFECT: technical effect of the invention consists in a shift of the spectral light-sensitivity range of PbSnSe solid solution films prepared on an aqueous solution by ion-exchange process in the far infrared range.
SUBSTANCE: method of producing pin-photodiodes with a guard ring on high-resistivity p-silicon includes thermal oxidation of the initial p-silicon wafer or an epitaxial structure comprising a layer of high-resistivity p-silicon, opening "windows" in the thermal oxide layer, depositing phosphorus atoms into the "windows" and distillation thereof combined with oxidation to form planar n+-p junctions of the operating region and the guard ring region, forming on the reverse side of the wafer a gettering layer and performing gettering, etching the gettering layer and doping the contact region of the base with boron atoms to form a p+-p type ohmic contact, opening in the oxide layer contact "windows" to the operating region and the guard ring and probing dark currents thereof, selecting wafers which do not correspond to given dark current values, etching out the thermal oxide layer therefrom and depositing on the free silicon surface a new protective layer silicon oxide at temperature not higher than 300°C, opening contact "windows" in the deposited layer and re-probing dark currents and if the dark current corresponds to given values, depositing a metal coating, forming a contact pattern and burning in the metal, and if the dark current does not correspond to the given values, repeating the operations until the given dark current values are achieved.
EFFECT: high output of non-defective photodiodes by reducing the level of dark current of the operating region and the guard ring region to given values.
2 cl, 1 tbl
SUBSTANCE: fabrication of GaAs-based photo inverter comprises growth by liquid-phase epitaxy on n-GaAs substrate of buffer n-GaAs ply, base n-GaAs ply, emitter p-GaAs ply and p-AlGaAs ply with Al content in solid phase of 30-40 at % at the growth start and Al content in solid phase of 10-15 at % in the ply surface area. Rear contact and face contact are deposited. Anti-reflection coating is applied on substrate face surface.
EFFECT: safe process, lower costs, higher efficiency of conversion of laser radiation.
FIELD: process engineering.
SUBSTANCE: invention relates to solid-state electronics, particularly, to fabrication of photo conducting radiation-resistant structures. This process comprises pre-formation of monoply of fat acid on the surface of lead-bearing salt solution in water in concentration of 1·10-3-5·10-3 mol/l to get said monoply by Langmuir- Blodgett process. Said one lead-bearing fat acid monoply is applied on photosensitive film surface. Said film is subjected to thermal sensitization. Note here that monoply transfer on photosensitive ply is performed by Langmuir- Blodgett process after said thermal sensitization. Pre-formation of monoply of fat acid is executed on the surface of lead-bearing salt solution in water at solution pH of 8.0±0.4.
EFFECT: higher radiation-resistance at high photo sensitivity and wide spectral range of photo sensitivity.
3 cl, 5 dwg, 6 tbl, 3 ex
SUBSTANCE: offered invention relates to technology of manufacture of semiconductor devices, in particular, to methods of manufacture of planar large area pin-photo diodes based on high-resistance silicon of p-type conductivity. The method includes preparation of a plate of source p-silicon or silicon epitaxial structure of p+-p-type, formation of a mask for implantation of P+ ions into a working area and a security ring, two-phase implantation of P+ ions with the energy and the dose respectively (30÷40) keV and (3÷4)·1015 cm-2 on the first and (70÷100) keV and (8÷10)·1015 cm-2 at the second stage for formation of n+-p transitions of working area and the security ring, implantation of
EFFECT: optimum selected implantation doses, modes and conditions of post-implantation annealing and conditions of application of protective and lightening coating provide increase of current sensitivity of pin-photo diodes at high background flares with preservation of low level of dark currents at decrease of complexity, labour input and energy consumption of manufacture.
2 cl, 1 tbl
SUBSTANCE: invention relates to production of silicon p-i-n photodiodes which are sensitive to radiation with wavelength of 0.9-1.06 mcm. Said silicon p-i-n photodiodes are intended for use in different optoelectronic devices which require detection of short laser pulses (10-40 ns). After performing high-temperature thermodiffusion processes to form the photodiode structure: - thermal oxidation; - phosphorus diffusion to form n+-type regions (photosensitive areas and collar rings); - phosphorus diffusion into the back surface of the wafer to generate impurities; - boron diffusion into the back surface of the water after etching a gettering n+-type layer to form a p+-type layer, after forming ohmic contacts, the method includes etching the dielectric film from the silicon surface and etching silicon by a depth less than 1 mcm, followed by depositing a silicon dioxide film using a low-temperature technique at temperature not higher than 800°C. Ohmic contacts are then formed using known techniques.
EFFECT: reduced dark current of photosensitive areas and the collar ring, reduced values of coupling factors between the photosensitive areas of multielement photodiodes and high output of non-defective devices.
SUBSTANCE: method for hybridisation of reading LSI chips and a photosensitive element array of photodetector devices includes pressing in indium microcontacts located on chips to be interfaced. The microcontacts are in the form of stretched rectangles with side dimensions smaller than the gaps between the microcontacts, both on the vertical and the horizontal. The microcontacts on the LSI chips and the photosensitive element array are located at an angle to each other.
EFFECT: high reliability of interfacing reading LSI chips and a photosensitive element array while preventing shorting of adjacent microcontacts.
SUBSTANCE: invention relates to technology of manufacturing silicon p-i-n photodiodes (FD), sensitive to radiation with wavelengths 0.9-1.06 mcm. According to invention in method of manufacturing silicon p-i-n photodiodes, in order to reduce concentration of electrically active centres, created by contaminating admixtures with low values of diffusion coefficients, process of thermal oxidation is carried out at temperature not higher than 950°C and the following processes of diffusion (phosphorus diffusion to create n+-regions, gettering with diffusion n+- layer, boron diffusion to create p+-region) are performed at temperatures, which do not exceed the given one. In this case due to sharp reduction of diffusion coefficient of admixtures with reduction of temperature of processes (exponential dependence on temperature) mainly admixtures with high diffusion coefficients, which later are efficiently removed by means of gettering processes, penetrate into silicon volume.
EFFECT: reduced concentration of generation-recombination centres in i-region of photodiode, which results in reduction of FD dark current and increased percent of output of usable devices.
SUBSTANCE: invention relates to photodiode technologies based on epitaxial GaN/AlGaN p-i-n structures which convert ultraviolet radiation. The invention discloses a method of producing a multi-element photodetector based on epitaxial GaN/AlxGa1-xN p-i-n structures. Production is carried out using a mesa technique of ion etching to a n+-AlGaN layer, heat-treating the surface of the mesa p-i-n diodes at 450-550°C for 90-200 s to heal radiation and stoichiometric defects formed on the perimeter the p-i-n diodes under the action of an ion beam or other surface damages arising on technological operations of producing a mesa structure.
EFFECT: reducing dark current of a multi-element photodetector.
SUBSTANCE: photodetector matrix reader cell with analogue-to-digital conversion comprises an input unit, an integrating capacitor with one of the plates shorted on the earth, a counter, a Schmitt trigger and a shift register. The counter is m-bit and does not have a reset. The input unit consists of three field-effect transistors. The first transistor, designed to stop the count, is enables a potential equal in magnitude to the supply voltage of the analogue part to be applied at its source, and a count stopping signal to be transmitted at the gate. The drain of the first transistor is connected to the source of the second transistor, which is designed to charge the integrating capacitor. The drain of the second transistor is connected to the second plate of the integrating capacitor and the gate is connected to the first output of the Schmitt trigger and the second input of the m-bit counter. The third transistor is designed to set a photodiode bias and is configured to use its gate as the input for setting a subthreshold transistor mode and connect its source to the photodiode. The drain of the third transistor is connected to the drain of the second transistor, the second plate of the integrating capacitor and the input of the Schmitt trigger. The input of the Schmitt trigger is also connected to the drain of the second transistor and the second plate of the integrating capacitor. The first output of the Schmitt trigger is connected to the second input of the m-bit counter, and the second output of the Schmitt trigger is connected to the first input of the m-bit counter. The output of the m-bit counter is connected by an m-bit data bus to the m-bit input of the shift register. The shift register also has an input designed to connect to the output of the shift register of the previous cell, an input for feeding a signal for loading a number from the counter into the shift register, an input for feeding a signal for reading information from the shift register and an input for feeding an inverted signal for reading information from the shift register. The output of the shift register is designed to connect to the input of the shift register of the next cell.
EFFECT: low power consumption, fewer control signals, implementing serial, simple output of data and miniaturisation.
7 cl, 8 dwg
SUBSTANCE: method of producing an aluminium oxide-based photoconverter includes making a porous plate with nanometre-sized pores, the porous plate used being aluminium oxide, the pores of which are filled by depositing semiconductor material, wherein the pores are filled using pulsed rectangular-shaped voltage with amplitude of 650-720 V and current density of 8-10 A/cm2 in a dimethylsulphoxide electrolyte of the following composition in g/l: zinc chloride - 8.2-8.35, sulphur - 6.5-7.0.
EFFECT: high efficiency of solar energy converters, simple manufacturing technology with low cost of production and a larger light-receiving surface of the photoconverter.
FIELD: physics, optics.
SUBSTANCE: invention relates to optic-electronic instrument making and may be used in optic-electronic instruments (OEI) for celestial orientation, comprising a matrix photodetector with charge accumulation. The solution consists in projection of a stellar sky area onto a photosensitive site of a photodetector via an image lens in three or more spectral ranges and calibration marks with varied exposition time, identification of stellar objects images in all spectral ranges and generation of a multispectral image of stellar objects by selection for each stellar object of an image of that spectral range, the average value of amplitude in which is highest, measurement of linear coordinates of star image centres and calibration marks and recount of linear coordinates of star image centres into angular coordinates o stars in a basic instrument system of coordinates with account of results of measurements of linear coordinates of calibration mark image centres.
EFFECT: increased accuracy of measurement of angular coordinates of stars due to increased signal/noise ratio by processing of star images in separate spectral ranges.
5 cl, 1 dwg
FIELD: physics, computer engineering.
SUBSTANCE: invention relates to multispectral reading photosensitive devices for reading sub-sampled data of photosensitive pixels in large-scale array photosensitive chips. The multispectral photosensitive device and pixel sampling method include: a first merging process for merging and sampling two adjacent pixels in the same row and the different columns, or in different rows and the same column or different rows and different columns in a pixel array to obtain sampling data of a first merged pixel; a second merging process for merging and sampling the sampling data of the first merged pixel obtained in the first merging process to obtain sampling data of a second merged pixel; and a third merging process; sampling data of a third merged pixel are obtained in a digital space by colour changing and image zooming methods.
EFFECT: enabling sub-sampling with high output and efficient image processing.
18 cl, 26 dwg
SUBSTANCE: invention relates to production of silicon p-i-n photodiodes which are sensitive to radiation with wavelength of 0.9-1.06 mcm. The method of producing a silicon photodiode according to the invention includes a thermal oxidation operation, diffusion of phosphorus to form n+-type conductivity regions, diffusion of phosphorus for gettering of impurities, diffusion of boron to form p+-type conductivity regions, forming double-layer ohmic contacts to a photosensitive region, a collar ring region and a p+-type conductivity contact layer by depositing a gold film with a titanium or chromium sublayer. After thermodiffusion operations, before forming ohmic contacts, the plates with p-i-n structures are further annealed at temperature of about 400°C in a nitrogen or hydrogen atmosphere for two hours.
EFFECT: invention reduces the level of dark current (not less than by an order) and high percentage of non-defective devices.
FIELD: physics, photography.
SUBSTANCE: invention relates to a photoelectric converter. In a photoelectric converter which adds together signals from a plurality of photocells included in photoelectric conversion blocks, each of the plurality of photocells includes a first semiconductor region of a first conductivity type which accumulates signal carriers. The first semiconductor regions included in photocells, which are included in each of the photoelectric conversion blocks and are placed in immediate proximity to each other, accommodate a second semiconductor region of a second conductivity type between each other. The height of the potential barrier for signal carriers generated in a defined region of the second semiconductor region is less than that for signal carriers generated in a third semiconductor region located between each of the first semiconductor regions and a drain region for excess charges of the first conductivity type.
EFFECT: invention enables to obtain the necessary signal in a situation when one signal is received using signals from a plurality of photocells by creating an insulation structure between photocells.
20 cl, 14 dwg
SUBSTANCE: device includes a multichannel reading system with channels for reading a thermal imaging signal and measuring range to image objects within an m×n array of reading cells, a transimpedance amplifier, a high-pass filter, an amplifier, a comparator, counters, line control buses, column reading buses and AND logic elements.
EFFECT: high accuracy of determining range to objects in one frame while simultaneously obtaining a thermal image.
4 cl, 1 dwg
SUBSTANCE: in a photosensitive charge-coupled device, having a first type conductivity substrate in its surface portion, a first type conductivity photosensitive region is further formed within a second type conductivity bulk transfer channel region, adjacent to and having ohmic contact with a photosensitive region which facilitates charge transfer, said first type conductivity photosensitive region having a region of overlap with a stop-diffusion region to form an ohmic contact in said overlap region. The underlying second type conductivity bulk transfer channel region has a lower impurity concentration than the bulk transfer channel region under the photosensitive region which facilitates charge transfer, wherein the potential value of the bulk transfer channel under the additional photosensitive region is lower than the potential value of the bulk transfer channel under the photosensitive region which facilitates charge transfer, and the depth of the additional photosensitive region in the transfer channel region matches the penetration depth of ultraviolet radiation into said semiconductor substrate.
EFFECT: designing a photosensitive charge-coupled device with higher sensitivity to ultraviolet radiation.
2 cl, 9 dwg, 1 tbl
FIELD: physics, photography.
SUBSTANCE: invention relates to a multispectral reader for reading infrared, monochromatic and colour images. The multispectral photosensitive device comprises a base layer with a plurality of macro units of composite reading pixels, at least one composite reading pixel comprises at least two base reading pixels arranged in layers along the light transmission direction, wherein each layer has one base reading pixel, and the base reading pixels are distributed on the upper side or lower side, or on the upper side and lower side of the base layer, and each side has at most two layers, wherein spectral bands read by the base reading pixels in the same composite reading pixels are orthogonal to each other, respectively.
EFFECT: invention provides improved colour reading and integration of colour reading and infrared reading.
14 cl, 28 dwg
FIELD: information technology.
SUBSTANCE: light-sensitive device includes a pixel array and a reading circuit, wherein a transfer gate for connecting adjacent pixels and transferring charge between connected pixels is located between at least some of said pixels in the pixel array; the reading circuit is used to read pixel charge in the pixel array, said charge is at least one of an intrinsic charge of said pixel, a charge transferred from a pixel adjacent to said pixel; superimposing the intrinsic charge of said pixel and the charge transferred from one or more pixels adjacent to said pixel, and superimposing transfer charges of two or more pixels adjacent to said pixel.
EFFECT: easy processing and reading.
20 cl, 24 dwg
FIELD: information service technical aids.
SUBSTANCE: contact-free integrated circuit has to be functional analog of contact-free data descriptor working at different frequencies. The descriptors are used in software of electronic data turnover and for data protection. Peripheral part of contact-free integrated circuit that is used for contact-free communication with peripheral equipment through electromagnet radiation of central part. Peripheral equipment is responsible for data supply, data input and output according to preset protocol. Peripheral equipment has at least one photovoltaic semiconductor structure to transform incident electromagnet radiation of optical range to electric energy. The structure is connected to central part of contact-free integrated circuit at the side where power and data are applied. At the side of data output there are at least two voltage-controlled optically active structures to modulate reflected light radiation. Data exchange protocol corresponds to at least single-time scanning of photovoltaic and optically active structures by focused and modulated light beam. The structures are disposed on the path of the beam. Then radiation after being reflected by photovoltaic and optically active structures is subject to detection. Semiconductor laser of peripheral equipment can be used as light source.
EFFECT: improved design of disk drives.
4 cl, 1 dwg