Thin-film transistor, matrix substrate and display panel
SUBSTANCE: thin-film transistor TFT includes a gate, a first insulating layer located above the gate, a second insulating layer located above the first insulating layer, a semiconductor layer, a source and a drain, located between the first insulating layer and the second insulating layer, an ohmic contact layer located between the semiconductor layer, the source and the drain, the ohmic contact layer including an opening passing through the ohmic contact layer by means of a gap between the source and the drain in order to open the semiconductor layer, and the second insulating layer is connected to the semiconductor layer through this opening, and a conductive layer located above the second insulating layer. The conductive layer and the gate are electrically connected to each other, so that when the TFT is in the on-state, the switching current generated in the conductive channels of the semiconductor layer is increased. When the TFT is in the off-state, the tripping current generated in the conductive channels is reduced.
EFFECT: the ratio of the making current to the tripping current is increased.
15 cl, 6 dwg
SUBSTANCE: invention relates to a p-type oxide, a p-type oxide composition, a method of producing a p-type oxide, a semiconductor device, an image reproducing apparatus and a system. The p-type oxide is an amorphous compound and has the following compositional formula: xAO∙yCu2O, where x denotes the molar fraction of AO and y denotes the molar fraction of Cu2O, x and y satisfy the following conditions: 0≤x<100 and x+y=100 and A is anyone of Mg, Ca, Sr and Ba or a mixture containing at least two elements selected from a group consisting of Mg, Ca, Sr and Ba.
EFFECT: p-type oxide is produced at a relatively low temperature and in real conditions and can exhibit excellent properties, ie sufficient specific conductivity.
11 cl, 36 dwg, 8 tbl, 52 ex
SUBSTANCE: in a tunnel field effect transistor with an insulated gate containing electrodes of source and drain made of multilayer graphene and located at an insulating substrate in the same plane, and also the gate made of a conducting material and located above the areas of source, tunnel junction and drain, electrodes of source and drain are oriented towards each other crystallographically by an even edge of a zigzag type and separated by a vacuum barrier transparent for charge carriers.
EFFECT: invention expands the inventory of tunnel transistor nanodevices; this device alongside its pronounced switching property has on the current-voltage curve of the source and drain electrodes the area with a negative differential resistance, which allows its functioning as the Gunn diode; the device requires lower voltage at the gate.
SUBSTANCE: invention relates to thin metal-oxide films used to make a field-effect transistor. A coating liquid for forming a thin metal oxide film includes an inorganic indium compound, at least one of an inorganic magnesium compound and an inorganic zinc compound, glycolic ether and a diol, wherein the diol is selected from at least one of diethylene glycol, 1,2-propanediol and 1,3-butanediol.
EFFECT: invention enables to obtain a thin-film metal oxide coating with the required resistivity using a simple method, a large area, the required shape and with high accuracy.
12 cl, 10 dwg, 4 tbl
SUBSTANCE: semiconductor device comprises a thin-film transistor comprising a gate bus, the first insulating film, an oxide-semiconductor layer in the form of an island, the second insulating film, a source bus, a drain electrode and a passivating film, and also a contact site, comprising the first connection element, made of the same conducting film as the gate bus, the second connecting element made from the same conducting film as the source bus and the drain electrode, and the third connection element formed on the second connection element. The second connection element contacts with the first connection element in the first window provided in the first and second insulating films, the third connection element contacts with the second connection element in the second window provided in the passivating film, and the second connection element covers the end surfaces of the first insulating film and the second insulating film in the first window, but does not cover the end surface of the passivating film in the second window. As a result the conical shape of the contact hole of the contact site may be controlled with high accuracy.
EFFECT: reduced damage of a mask.
17 cl, 14 dwg
FIELD: electrical engineering.
SUBSTANCE: semiconductor device includes thin-film diode and protection circuit with protective diode. Thin-film diode includes semiconductor layer with the first, second zones and channel zone, gate electrode, the first electrode connected to the first zone and gate electrode and the second electrode connected to the second zone. When conductivity type of thin-film diode is n-type then anode electrode of the protective diode is connected to the line which is connected either to gate electrode or to the first electrode of thin-film diode. When conductivity type of thin-film diode is P-type then cathodic electrode of the protective diode is connected to the line which is connected either to gate electrode or to the first electrode of thin-film diode. Protective circuit does not include other diodes which are connected to the line so that current direction is opposite to the protective diode.
EFFECT: deterioration of thin-film diode properties can be decreased when size of the circuit is minimised.
12 cl, 37 dwg
SUBSTANCE: thin-film transistor comprises the first capacitor, comprising an area, in which the first electrode of the capacitor connected with an electrode of source, and the second electrode of the capacitor are arranged one on the other in direction of thickness at opposite sides of the first layer of a dielectric, formed between them, the second capacitor, comprising an area, in which the third and fourth electrodes of the capacitor are arranged one above the other in direction of thickness at the opposite sides of the second layer of the dielectric, formed between them, four output buses, stretching from the appropriate electrode of the capacitor in a plane direction, the first connection crossing the second and fourth output buses, when looking in direction of thickness, and the second connection crossing the first and third output buses, when looking in direction of thickness, besides, the second electrode of the capacitor and the gate electrode are connected to each other via the second output bus, the third electrode of the capacitor and the source electrode are not connected to each other, the fourth electrode of the capacitor and the gate electrode are not connected to each other.
EFFECT: invention makes it possible to create a thin-film transistor, occurrence of a defect in which may be prevented even in case of leakage in a capacitor connected to a transistor body.
37 cl, 13 dwg
SUBSTANCE: method of manufacturing of an enhancement/depletion (E/D) inverter having a number of thin-film transistors on the same substrate with channel layers consisting of an oxide semiconductor containing at least one element selected from In, Ga and Zn, involves the stages to form a first transistor and a second transistor; a channel layer thickness of the first and second transistors is mutually different; at least one of the channel layers of the first and second transistors are thermally treated.
EFFECT: expansion of the facilities allowing to manufacturer an inverter with oxide semiconductor thin-film transistors of various threshold voltages, simplified method of manufacturing of the inverter with such characteristics, cost reduction.
13 cl, 18 dwg
SUBSTANCE: in a memory element which comprises a substrate with deposited thin layers of ceric and silicon oxide and metal electrodes for recording and deleting information is made from glass which is pre-cleaned with acetone and isopropyl alcohol, on which a ceric oxide layer is deposited at temperature higher than 600°C and thickness of more than 3 nm and a silicon film with thickness of 50-100 nm.
EFFECT: invention prolongs information storage period, simplifies the manufacturing technology and reduces production expenses.
4 cl, 4 dwg
SUBSTANCE: amorphous oxide the composition of which changes in direction of the thickness of layer contains the compound the composition of crystal state of which is presented with formula In2-XM3XO3(Zn1-YM2YO)m , where M2 - element of group II with atomic number which is less than that of Zn (for example Mg or Ca), M3 - element of group III with atomic number which is less than that of In (for example B, Al, Ga or Y), x is within the range of 0 to 2, y is within the range of 0 to 1 and m is 0 or natural number which his less than 6, and at that, amorphous oxide has concentration of electron carriers of not less than 1012/cm3 and less than 1018/cm3 and has electron mobility which increases with increase of concentration of electron carriers.
EFFECT: amorphous oxide operates as semi-conductor to be used in active layer of transistor.
7 cl, 10 dwg
SUBSTANCE: in a field-effect transistor which includes an oxide film as a semiconductor layer, the oxide film has a channel part, a source part and a drain part, and concentration of one of hydrogen or deuterium in the source part and in the drain part exceeds that in the channel part.
EFFECT: invention enables to establish connection between the conducting channel of a transistor and each of sources and drain electrodes, thereby reducing change in parameters of the transistor.
9 cl, 13 dwg, 6 ex
SUBSTANCE: in semiconductor instrument containing sink, source consisting of transistor cells and peripheral p-n junction, which are located under gate electrode, as well as of metal electrode of source, which is located above gate electrode, polysilicon gate electrode insulated from source areas with dielectric, which contains in middle part the matrix of transistor cells and peripheral end part overlapping above the dielectric the source peripheral p-n junction; end part of polysilicon gate electrode, which overlaps above the dielectric the source peripheral p-n junction, is topologically separated from end cell of matrix of transistor cells and not covered with source metal coating.
EFFECT: reducing the resistance of power double-diffused MOS transistors in open state, without increase in the size of crystal and deterioration of other parameters.
2 cl, 3 dwg
FIELD: optical data processing systems.
SUBSTANCE: proposed multichannel reader built on semiconductor substrate has N input units, multiple-output switching unit, common read-out bus, write bus, pre-processor signal processing unit incorporating comparator, arithmetic-logic device, and memory unit; one of two comparator inputs is designed to apply digital-code signal thereto and is connected to common read-out bus; other comparator input is designed to feed reference signal; comparator output is connected to input of arithmetic-logic device whose output is connected to input of memory unit whose output is coupled with write bus; each input unit is made in the form of amplifier that has input, output, and control input, as well as two MIS transistors; first MIS transistor gate is connected to output of respective cell of multiple-output switching unit and gate, to common read-out bus; second MIS transistor gate is connected to output of next cell of multiple-output switching unit and gate, to write bus; each input unit is provided in addition with K-capacity analog-to-digital converter and L-capacity digital-to-analog converter; first MIS transistor source is connected to output of analog-to-digital converter whose input is connected to amplifier output; second MIS transistor source is connected to input of digital-to-analog converter whose output is connected to amplifier control input; common read-out bus is assembled of K buses, K being equal to capacity of analog-to-digital converter and to number of first MIS transistors connected through their gates to respective outputs of multiple-output switching unit, through drains, to respective buses of common read-out buses, and through sources, to respective inputs of analog-to-digital converters; write bus is assembled of L buses, L being equal to digital-to-analog converter capacity and to number of second MIS transistors connected through drains to respective buses forming write bus, through gates, to output of next cell of multiple-output switching unity, and through sources, to respective inputs of digital-to-analog converter.
EFFECT: extended dynamic range, enhanced speed, enlarged functional capabilities.
1 cl, 1 dwg
FIELD: process engineering.
SUBSTANCE: invention relates to optics and lighting engineering exploiting laminar and polarizing polymer-based materials to get bright visual effects without use of dyes and monochromatic light emitters. Invention describes the production of light panel of laminar pack of polymer films for colour control in transmitted light flux. This process arrangement of two anisotropic translucent and colourless films of hard elastic polypropylene at right angle between two sheets of light polarizing film material. One of said films is intermittently stretched by 25-35% and, then, returned to its initial size. Said film is displaces relative to the panel other plies at mechanical effects applied thereto.
EFFECT: simplified process, enhanced performances, rule out application of electric power for colour variation.
3 cl, 5 dwg, 1 tbl, 12 ex
SUBSTANCE: invention relates to interior rearview mirror system. Interior rearview mirror (1) includes flat mirror glass (2), frame and support assembly (3) where the flat mirror glass (2) is accommodated to be placed in suitable location in vehicle (100), OLED (organic light emitting diodes) film (11) covering the whole surface of flat mirror glass (2), sensor (12) which determines day and night, light sensor (13) which measures light from headlights of rear vehicle (100), and two-position on/off button (14). OLED film (11) covers the whole surface of flat mirror glass (2). The interior rearview mirror (1) contains automatic antidazzle system (10) provided with processing circuit (15) made capable to activate OLED film (11) to lower reflection of flat mirror glass (2) when light sensor (13) of interior rearview mirror detects light from headlights of rear vehicle (100).
EFFECT: higher traffic safety due to driver protection against dazzling by headlights of rear vehicle.
6 cl, 4 dwg
FIELD: physics, optics.
SUBSTANCE: infrared polarisation light filter is described, installed on an emitter of infrared sync signals of a device of stereoscopic image display. The device alternately displays the right and left images by the method of time separation using polarised light in one direction. Glasses include polarising plates arranged near in the right and left fields of view. On the front surfaces of polarising plates above each other there are opening/closing fields of view and liquid crystal cells that adjust inclination. A sync signal receiver is installed on the frame of the glasses and receives a polarised infrared light sync signal. Liquid crystal cells that open/close fields of view are actuated synchronously so that the right and left fields of view alternately open/close relative to the displayed light of the device of stereoscopic light display. Voltage is applied to liquid crystal cells that adjust inclination in accordance with the angle of inclination. A detector of the inclination angle is also installed on the frame. The angle of rotation of the light polarisation plane in liquid crystal cells that adjust inclination is regulated. Maximum screened condition is always maintained during closure of fields of view.
EFFECT: prevention of crosstalk.
13 cl, 9 dwg
FIELD: physics, optics.
SUBSTANCE: invention relates to collimators which can be used to illuminate liquid crystal screens. The collimator is in the form of a wedge-like optical waveguide having a first end and a second end opposite to the first end. The first end is thinner than the second end. The collimator also has a visible surface passing at least in part between the first end and the second end, and a back surface opposite the visible surface. The visible surface has a first critical angle, and the back surface is configured to be reflective below the first critical angle. Furthermore, an end reflector, having a polyhedral (faceted) lens, is placed at the second end of the optical waveguide.
EFFECT: reduced overall dimensions of the collimator.
15 cl, 10 dwg
SUBSTANCE: disclosed is a method of making displays with a non-standard aspect ratio or shape from commercially available liquid crystal arrays with a standard aspect ratio (rectangle with aspect ratio of 3:4, 9:16, etc). The disclosed method can be used to produce liquid crystal arrays with an aspect ratio of 1:1, triangular, with circle elements or other shapes and combinations of shapes. The method includes retrieving a liquid crystal array from structural components of a liquid crystal panel; forming incisions on the front and back plates of the liquid crystal array at the boundary of the desired and removed parts of the liquid crystal array; removing the polarising film from the removed part of the liquid crystal array and unused electronic circuits (if necessary) in the desired part; mechanical breaking of the removed part of the liquid crystal array; releasing pressure arising when mounting the liquid crystal array in the equipment, and monitoring restoration of properties of the liquid crystal composition in the region of the desired part using a tool which forms polarised light flux; depositing a sealant compound on the cut region and hardening the sealant compound.
EFFECT: making a customised display with a non-standard aspect ratio or shape with high output of non-defective displays.
SUBSTANCE: invention is related to edge-lit systems. The edge-lit system comprises an emission source in the forms of at least one light-emitting diode; the lower mirror with reflective coating; the upper reflective and diffusion film placed above the lower mirror and edge mirrors at four sides thus forming an air-filled waveguide together with the lower mirror and the upper reflective and diffusion film. The upper reflective diffusion plate is made of material with volume-diffuse scattering and reflective coating applied to its lower side; it has a number of transparent or partially transparent areas.
EFFECT: improving brightness and uniformity of lighting.
4 cl, 6 dwg
SUBSTANCE: integrated vision and display system contains a layer generating display image; image detector is designed for visualisation of infrared radiation in the narrow range of angles in regard to display surface normal and it includes reflection of one or more objects at the display surface or close to it; radiator of the vision system is designed to radiate infrared radiation for the purpose of objects lighting; light waveguide passes visible and infrared radiation and has the opposite upper and/or lower surfaces designed to receive infrared radiation from the vision system radiator, to guide infrared radiation by TIR from the upper and lower surfaces and projection of infrared radiation to an object outside limits of the narrow range of angles in regard to display surface normal.
EFFECT: improving functionality and small size of the device.
14 cl, 14 dwg
FIELD: physics, optics.
SUBSTANCE: system for scanning collimated light comprises an optical waveguide, a system for inputting light into the first end of the optical waveguide and a controller for controlling position along the first end of the optical waveguide. The optical waveguide comprises a first end, a second end opposite the first end, a viewing surface which continues at least part between the first end and the second end, a back surface opposite the viewing surface, and an end reflector located at the second end of the optical waveguide. The end reflector comprises one or more polyhedral lens structures and a diffraction grating.
EFFECT: high efficiency of scanning collimated light.
13 cl, 16 dwg