Silicon wafer surface passivation by magnetron sputtering

FIELD: chemistry.

SUBSTANCE: silicon wafers surface passivation includes cleaning of crystalline silicon wafers, silicon sputtering using a magnetron with a silicon target. Silicon target sputtering is performed in argon (Ar) medium with addition of hydrogen (H2) or in argon (Ar) medium with addition of organosilicon compounds, or in argon (Ar) medium with addition of hydrogen (H2) and organosilicon compounds to obtain the passivation layer of hydrogenated amorphous silicon of high quality, to passivate the wafer surface and reduce the surface recombination velocity of charge carriers. At least one chemical reactant selected from the group consisting of silane (SiH4), Si2H6, Si2H4, SiF4, Si2F6 and other silicon-containing compounds is used as the organosilicon compound.

EFFECT: invention allows to reduce defects and surface recombination of charge carriers, to increase charge carriers lifetime, to improve quality, technology and safety of the passivation process.

2 cl, 1 dwg

 



 

Same patents:

FIELD: chemistry.

SUBSTANCE: method of growing an epitaxial europium monoxide EuO film on a silicon substrate includes forming, via molecular-beam epitaxy, a submonolayer of europium silicide at substrate temperature T=640-680°C and pressure of the stream of europium atoms of (1-7)∙10-8 Torr, after which europium monoxide is deposited first at substrate temperature of 340-380°C, oxygen stream pressure of (0.2-3)·10-8 Torr and pressure of the stream of europium atoms of (1-4)·10-8 Torr, and then at substrate temperature of 430-490°C, oxygen stream pressure of (0.2-3)·10-8 Torr and pressure of the stream of europium atoms of (1-7)·10-8 Torr.

EFFECT: forming epitaxial EuO films on silicon substrates without a buffer layer using molecular-beam epitaxy.

5 cl, 6 dwg, 18 ex

FIELD: instrumentation.

SUBSTANCE: method to manufacture a vacuum sensor with a 3D porous nanostructure consists in the fact that a heterostructure from various materials, in which they form a thin-film semiconductor resistor, afterwards it is fixed in the sensor body, and contact sites are connected with body leads with the help of contact conductors. A thin-film semiconductor resistor is formed as a 3D porous nanostructure (SiO2)40%(SnO2)50%(ZnO)10% by application of a sol of orthosilicic acid, containing tin and zinc hydroxide, onto a silicon substrate with the help of a centrifuge and subsequent annealing, which is prepared in two stages, at the first stage they mix tetraethoxysilane and ethyl alcohol, then at the second stage into the received solution they add distilled water, hydrochloric acid and tin chloride dihydrate (SnCl2·2H2O), and also additionally add zinc chloride (ZnCl2).

EFFECT: increased sensitivity of a produced vacuum sensor.

3 cl, 3 dwg

FIELD: chemistry.

SUBSTANCE: invention relates to microelectronics and can be used in producing epitaxial structures of semiconductor compounds A3B5 and A2B6 by chemical vapour deposition of organometallic compounds and hydrides. A method of producing an epitaxial layer of a binary semiconductor material on a monocrystalline substrate through organometallic chemical vapour deposition employs a reactor with a vertical reaction chamber which is circular relative to a central vertical axis, a horizontally mounted substrate holder, mounted in the reaction chamber to allow rotation about said axis, a circular shield mounted in said reaction chamber at a distance of about 15-40 mm over said substrate holder and having a larger diameter than said substrate holder, wherein a predetermined temperature of the uniformly rotating substrate holder is maintained, at least two reaction gases are separately fed into different radial sectors of the reaction chamber, wherein the reaction gases and a carrier gas are fed in a manner that allows flow thereof in a radial direction within the reaction chamber at the same rate at the same diameter in all sectors.

EFFECT: improved quality of heteroepitaxial structures.

7 cl, 4 dwg

FIELD: chemistry.

SUBSTANCE: method of making separate thin epitaxial layers of semiconductor chips with semiconductor device structures includes preparing the surface of a basic semiconductor substrate for homoepitaxy; depositing on the basic substrate by homoepitaxy a thin epitaxial layer of semiconductor identical to the basic substrate; treating the boundary between the basic substrate and the thin epitaxial layer with focused laser radiation to form a mechanically weak boundary; depositing an epitaxial device structure on the epitaxial layer; depositing top contacts on the epitaxial device structure; dividing the epitaxial device structure into separate chips, such that the vertical section passes through the epitaxial device structure and the epitaxial layer and ends near the mechanically weak boundary; attaching the epitaxial device structure divided into separate chips to a supporting substrate; separating the basic substrate from the epitaxial device structure; depositing lower contacts on the epitaxial device structure; polishing the separated basic substrate and transferring to the beginning of the cycle for reuse.

EFFECT: invention provides nondestructive separation of thin epitaxial layers with device structures with reuse of the basic substrate.

24 cl, 12 dwg

FIELD: chemistry.

SUBSTANCE: method is based on application of laser radiation with wavelength and power, selected in such a way that laser radiation is absorbed near one of the borders of layered crystalline structure and partially destroys group III nitride near said border, and thus weakens mechanical strength of said border and entire layered crystalline structure. Obtained by said method crystalline structures with optically weakened border can be used as substrates for growing epitaxial crystalline layers of group three nitrides and make it possible to considerably weaken mechanical stresses that arise due to mismatch of parameters of crystalline lattices and thermal expansion coefficients.

EFFECT: weakening of mechanical stresses results in reduction of curvature of epitaxial layers and reduces quantity of growth defects in epitaxial layers, application of mechanical or thermomechanical stress to epitaxial layers, grown on crystalline structures with optically weakened border makes it possible to easily separate obtained epitaxial layers from initial substrate on optically weakened border.

8 cl, 20 dwg, 7 ex

FIELD: chemistry.

SUBSTANCE: in the process of growing epitaxial film of group three nitride on growth substrate 1 used is polymorphic carbon buffer layer 4, located between substrate 1 and epitaxial film 3 and consisting of mixture of polycrystalline carbon with mainly vertically oriented basal planes 5, polycrystalline carbon with mainly horizontally oriented basal planes 6 and amorphous carbon 7.

EFFECT: application of polymorphic carbon buffer layer makes it possible, on one hand, to reduce mechanical tension, arising because of discrepancy of parameters of crystalline grids between epitaxial film and substrate, and prevent cracking of epitaxial films, and on the other hand, it does not lead to highly strong mechanical connection of substrate with grown film, which provides its easy separation from substrate.

8 cl, 4 dwg, 9 ex

FIELD: chemistry.

SUBSTANCE: method of making a silicon sensitive element for a luminescent oxygen sensor includes growing, on a substrate of monocrystalline silicon of p-type conductivity with surface crystallographic orientation (100) with resistivity of 1 to 10 mOm·cm, a layer of porous silicon nanofilaments by successively holding in the following solutions: first in an aqueous silver nitrate solution with concentration of 0.02-0.04 mol/l and hydrofluoric acid with concentration of 5 mol/l in ratio of 1:1 for 30-60 s to deposit silver nanoparticles on the surface of a silicon plate, then in a mixture of hydrofluoric acid with concentration of 5 mol/l and 30% hydrogen peroxide in ratio of 10:1 for 20-60 min to form silicon nanofilaments as a result of chemical etching of the silicon plate in places coated with silver nanoparticles, and finally in 65% nitric acid solution for 10-20 min to remove silver nanoparticles and stabilise the surface of the silicon nanofilaments, thereby obtaining porous silicon nanofilaments with length of 2-5 mcm, cross-sectional dimension of 30-300 nm, having luminescence in the range of 650-850 nm, the intensity of which depends on the presence of oxygen molecules.

EFFECT: improved properties.

4 dwg

FIELD: chemistry.

SUBSTANCE: in the method for plasma formation of cubic silicon carbide films on silicon, cleaning of the surface of a silicon wafer, formation of a layer of nanoporous silicon and deposition of a layer of 3C-SiC are carried out in a single processing procedure in multiple steps - surface cleaning and formation of the layer of nanoporous silicon are carried out using microwave plasma cleaning and etching of the surface of the silicon wafer using CF4 and O2 gases, and deposition of the layer of 3C-SiC is carried out using microwave plasma synthesis using SiF4 (SiH4), CF4 and H2 gases, all processing procedures being carried out in low-pressure microwave plasma with pressure of 1·10-4-10 Torr, object table temperature of 600-250°C and electrical bias thereof of minus 10 V to minus 300 V.

EFFECT: converting a process into a single processing procedure with variation of the process medium therefor, obtaining thick 3C-SiC layers.

FIELD: nanotechnology.

SUBSTANCE: method of forming nanoscale structures is designed to produce strips of thin films of nanoscale width with the purpose of their study and formation of elements of nanoelectromechanical systems (NEMS). In the method of forming the nanoscale structures comprising obtaining the preforms of thin films and selection of strips of thin films from them, at least one thin film preform is fixed inside the filled volume, which is mounted in a microtome holder so that the plane of the thin film preform is not parallel to the plane of cutting, after that cutting of the filled volume is carried out with the knife of at least one thin film preform and a flat fragment with a thin film strip is obtained. There are embodiments in which the filled volume is set in a microtome holder so that the plane of the thin film preform is perpendicular to the plane of cutting and perpendicular to the direction of cutting; or the filled volume is set in the microtome holder so that the plane of the thin film preform is perpendicular to the plane of cutting and parallel to the direction of cutting. There are also embodiments in which after the cutting is carried out the investigation is carried out with the probe of a scanning probe microscope of the surface of the filled volume with at least one thin film preform; or modification is carried out of the thin film preform located inside the filled volume. There are also embodiments in which the modification of the thin film preform is the mechanical exposure with a probe to it; or the electric exposure with a probe to it; or electrochemical exposure with a probe to it; or exposure to it with an electron beam; or exposure to it with an ion beam; or exposure to it with an X-ray beam; or exposure to it with a beam of alpha-particles; or exposure to it with a beam of protons; or exposure to it with beam of neutrons. There is also an embodiment in which the inside filled volume a set of thin film preforms is fixed; and the thin film preforms are located parallel to each other. There is also an embodiment in which the thin film is used as graphene.

EFFECT: all of the above embodiments of the method extend its functional capabilities.

17 cl, 5 dwg

FIELD: nanotechnology.

SUBSTANCE: use: of new products nanoelectronics for a closed cycle of production. The essence of the invention consists in that in nanotechnology complex based on ion and probe technologies, comprising a distribution chamber with pumping means, in which there is a central robot-distributor with the ability of axial rotation, comprising a grip of substrate carriers, at that the distribution chamber comprises flanges by means of which it is connected to the loading chamber and the module of ion implantation, the grip of substrate carriers has the ability of interaction with the loading chamber and the module of ion implantation, the measuring module is integrated, comprising a scanning probe microscope and a module of ion beams with a system of gas injectors, and they are connected to the flanges of the distribution chamber and have an ability to interact with the grip of substrate carriers. The technical result: providing an ability to vary the technological routes and enhance the functional capabilities of the distribution chamber and have an ability to interact with the grip of substrate carriers.

EFFECT: implementation extends the functional capabilities of the nanotechnology complex.

5 cl, 1 dwg

FIELD: metal science; protection of materials against external and corrosive attacks.

SUBSTANCE: proposed method for producing diamond-like films designed for encapsulating solar photocells to protect them against chemical, radiation, and mechanical damage includes variation of ion kinetic energy, plasma discharge current, and spatial density distribution of plasma incorporating C+, H+, N+, and Ar+ ions by acting upon ion current from radial source with electric field built up by stop-down, neutralizing, and accelerating electrodes. Spatial plasma distribution is checked for uniformity by measuring plasma current density on solar photocell surface whose temperature is maintained not to exceed 80 oC. In the process substrate holder makes complex axial movement in three directions within vacuum chamber. Diamond-like films produced in the process on solar photocell surface area over 110 cm2 are noted for uniformity, difference in their optical parameters variable within desired range is not over 5%.

EFFECT: enhanced adhesive property, microhardness, and resistance of films to corrosive attacks.

5 cl, 12 dwg, 2 tbl

FIELD: optoelectronics; manufacture of quantum-size light-emitting heterostructures including lasers operating in infrared wave band.

SUBSTANCE: proposed method includes sequential growing of following layers on GsAs substrate by GaAs molecular-beam epitaxy: GaAs buffer layer; lower emitter layer basing on AlGaAs compound; lower part of GaAs waveguide layer; active region formed at substrate temperature of 350 - 380 °C by sequential deposition of GaAsN/InGsAsN superlattice of following chemical composition: indium, 35 - 50% and nitrogen, 2 - 4%, incorporating at least one GaAsN layer and at least one InGsAsN layer, central InAs layer, 0.3 - 0.5 nm thick, GaAsN/InGaAsN superlattice incorporating at least one GaAsN later and at least one InGaAsN later of following chemical composition: indium, 35 - 50% and nitrogen, 2 - 4%, ratio of Group V element currents to group III ones being 1.5 - 5.0, upper part of GsAs waveguide layer, and upper emitter layer based on AlGaAs compound; GaAs contact layer. Proposed light-emitting structure is characterized in affording radiation wavelength of 1.30 to 1.55 μm and has GaAs substrate whereon following layers are grown: GaAs buffer layer; lower emitter layer formed of alternating AlAs and GaAs layers; GaAs waveguide layer with active region in the form of two GaAsN/InGaAsN superlattices abutting against central InAs layer; upper emitter layer based on AlGaAs compound; and GaAs contact layer; each of mentioned superlattices has at least one GaAsN layer and at least one InGaAsN layer.

EFFECT: enhanced radiation wavelength at low threshold current density, high gain, and high differential efficiency.

12 cl, 5 dwg

FIELD: microelectronics; methods of manufacture of microcircuit chips.

SUBSTANCE: the offered invention is pertaining to the field of microelectronics, in particular, to the methods of manufacture of microcircuit chips. The offered method includes a loading of semiconductor slices in a reactor having hot walls perpendicularly to a gas stream, pumping-out of the reactor air up to the ultimate vacuum, introduction of monosilane for deposition of layers of polycrystalline silicon, silane supply cutoff, pumping-out of the reactor air up to the ultimate vacuum, delivery of a noble gas into the reactor up to atmospheric air pressure, unloading of the semiconductor slices from the reactor. After introduction of the noble gas into the reactor conduct an additional thermal annealing of layers of polycrystalline silicon at the temperature of no less than 1323K, then keep the slices at this temperature during 40-60 minutes in a stream of noble gas and reduce the temperature down to the temperature of the polycrystalline silicon layers growth. The technical result of the invention is a decrease of heterogeneity of resistance of the polycrystalline silicon layers.

EFFECT: the invention ensures a decrease of heterogeneity of resistance of the polycrystalline silicon layers.

1 dwg, 2 tbl, 1 ex

FIELD: semiconductor technology; production of microelectronic devices on the basis of substrates manufactured out of III-V groups chemical element nitride boules.

SUBSTANCE: the invention is pertaining to production of microelectronic devices on the basis of substrates manufactured out of III-V groups chemical element nitride boules and may be used in semiconductor engineering. Substance of the invention: the boule of III-V groups chemical element nitride may be manufactured by growing of the material of III-V groups the chemical element nitride on the corresponding crystal seed out of the same material of nitride of the chemical element of III-V of group by epitaxy from the vapor phase at the speed of the growth exceeding 20 micrometers per hour. The boule has the quality suitable for manufacture of microelectronic devices, its diameter makes more than 1 centimeter, the length exceeds 1 millimeter, defects density on the boule upper surface is less than 107 defects·cm-2.

EFFECT: the invention ensures manufacture of the microelectronic devices of good quality and above indicated parameters.

102 cl, 9 dwg

FIELD: semiconductor technology; production of microelectronic devices on the basis of substrates manufactured out of III-V groups chemical element nitride boules.

SUBSTANCE: the invention is pertaining to production of microelectronic devices on the basis of substrates manufactured out of III-V groups chemical element nitride boules and may be used in semiconductor engineering. Substance of the invention: the boule of III-V groups chemical element nitride may be manufactured by growing of the material of III-V groups the chemical element nitride on the corresponding crystal seed out of the same material of nitride of the chemical element of III-V of group by epitaxy from the vapor phase at the speed of the growth exceeding 20 micrometers per hour. The boule has the quality suitable for manufacture of microelectronic devices, its diameter makes more than 1 centimeter, the length exceeds 1 millimeter, defects density on the boule upper surface is less than 107 defects·cm-2.

EFFECT: the invention ensures manufacture of the microelectronic devices of good quality and above indicated parameters.

102 cl, 9 dwg

FIELD: silicon compounds technology.

SUBSTANCE: tetrafluorosilane production process comprises following stages: (1) hexafluorosilicate heating; (2-1) reaction of tetrafluorosilane gas containing hexafluorodisiloxane formed in stage (1) with fluorine gas; (2-2) reaction of tetrafluorosilane gas containing hexafluorodisiloxane formed in stage (1) with fluorine-polyvalent metal compound; (2-3) reaction of tetrafluorosilane gas obtained in stage (2-1) with fluorine-polyvalent metal compound. Finally, high-purity tetrafluorosilane with 0.1 ppm by volume of hexafluorodisiloxane is obtained, which is applicable in manufacture of optical fiber, semiconductors, and sun battery elements.

EFFECT: reduced content of impurities in product.

24 cl, 1 dwg, 1 tbl, 9 ex

FIELD: engineering of microscopes.

SUBSTANCE: probes for probe microscopy are made of silicic whiskers, grown in accordance to steam-liquid-crystal mechanism on cantilevers with crystallographic orientation 111. Such cantilevers are made of silicon-on-insulator structures, which are formed by melting together silicon plates, while one of plates has orientation 111. Whiskers grown in accordance to aforementioned method, may have stepped shape, ideal for probes.

EFFECT: high resolution capacity with high anti-vibration stability.

4 cl, 4 ex, 17 dwg

FIELD: silicon technology for producing semiconductor device structure.

SUBSTANCE: proposed method for gas-phase growth of epitaxial silicon layers involves set-up of temperature gradient in each range of substrates affording temperature of top parts of substrates lower by 10 K than that of bottom parts; growth is conducted at temperature lower by 10 - 20 K than pre-etching and annealing temperature, temperature drop-and-rise cycle by 50 - 100 K being conducted in beginning of epitaxial silicon layer growth process.

EFFECT: reduced self-doping level in growing epitaxial layers, enhanced uniformity of layer surface area and thickness, enhanced yield from each wafer, reduced computer time requirement.

1 cl, 1 dwg

Carbon polymer // 2282583

FIELD: carbon materials.

SUBSTANCE: carbon polymer contains homeotropically oriented carbon atoms and is made in the form of monocrystalline structure with tightly packed carbon atoms with sp-sp3 hybridization. Distance between adjacent carbon atoms in the same chain varies from 1.21 to 1.37 Å and chains are spaced from each other by 3.97 to 5.11 Å. Carbon polymer is prepared through vaporization of graphite by impulse arc discharge in vacuum chamber provided with one principal and two auxiliary plasma sources. Plasma beam is oriented onto substrate. Angle of plasma beam relative to substrate is varied depending on impulse parity. Atomically smooth film is thus prepared having coefficient of friction 0.05-.0.6 and showing wear and score resistance. polymer is further thrombus resistant and biologically compatible.

EFFECT: achieved high performance characteristics.

2 dwg, 1 tbl

FIELD: manufacture of semiconductor materials for semiconductor devices.

SUBSTANCE: proposed method for manufacturing part incorporating silicon substrate with silicon carbide film on its surface includes synthesis of silicon carbide film on substrate surface by joint heating of substrate and carbon-containing material at temperature of 1100 to 1400 °C; used as carbon-containing material is solid material brought in mechanical contact with substrate.

EFFECT: facilitated procedure.

11 cl, 5 dwg

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