Photoelectric conversion device and imaging system

FIELD: photography.

SUBSTANCE: photoelectric conversion device has light-receiving elements, arranged on plane of image generation. Light-receiving element include a plurality of portions of photoelectric conversion, built in a first direction parallel to plane of image formation, through insulating portion, and a light guide portion, extending along plurality of portions of photoelectric conversion. In first plane, parallel to plane of image generation and crossing light guide portion, maximum width of light guide portion in first direction is greater than maximum width of light guide portion in second direction, parallel to plane of image generation and orthogonal to first direction.

EFFECT: invention can improve accuracy of dividing light into a plurality of portions of photoelectric conversion.

11 cl, 10 dwg

 



 

Same patents:

FIELD: physics, photography.

SUBSTANCE: invention relates to a multispectral reader for reading infrared, monochromatic and colour images. The multispectral photosensitive device comprises a base layer with a plurality of macro units of composite reading pixels, at least one composite reading pixel comprises at least two base reading pixels arranged in layers along the light transmission direction, wherein each layer has one base reading pixel, and the base reading pixels are distributed on the upper side or lower side, or on the upper side and lower side of the base layer, and each side has at most two layers, wherein spectral bands read by the base reading pixels in the same composite reading pixels are orthogonal to each other, respectively.

EFFECT: invention provides improved colour reading and integration of colour reading and infrared reading.

14 cl, 28 dwg

FIELD: electricity.

SUBSTANCE: image acquisition solid-state device has the first substrate equipped with a photoelectric transducer at its primary surface, the first structure of wiring layout having the first contact area which contains a conducting material, the second substrate equipped with a part of peripheral circuit having its contact area at its primary surface and the second structure of wiring layout which contains a conducting material. Moreover the first contact area and the second contact area are connected so that the first substrate, the first structure of wiring layout, the second structure of wiring layout and the second substrate are place in the specified order. Besides, the conducting material of the first contact area and the conducting material of the second contact area are surrounded by diffusion-preventing films.

EFFECT: invention provides the image acquisition solid-state device capable to suppress generation of dark current or loss current.

14 cl, 11 dwg

FIELD: physics, optics.

SUBSTANCE: invention relates to a multispectral light-sensitive device and a method of making the said device. The multispectral light-sensitive device has at least one opaque base layer, each base layer having at least two sides provided with groups of light-sensitive pixels, each group of light-sensitive pixels being used to detect light of any spectrum emitted from the front side. Alternatively, the multispectral light-sensitive device has at least one transparent base layer, each base layer having at least two sides provided with groups of light-sensitive pixels, each group of light-sensitive pixels being used to detect light of a spectrum of interest, emitted from the front side from the front or rear side.

EFFECT: invention can be used to simultaneously detect different types of two directions or to detect the type of one direction using the same detector for detection in two directions, thereby increasing efficiency of the detector.

16 cl, 32 dwg

Display device // 2510931

FIELD: physics, optics.

SUBSTANCE: invention relates to a display device equipped with an optical sensor in a pixel region. Display device has optical sensor having a highly sensitive photosensitive element. The photosensitive element is provided with a diode (D1), reset signal wiring (RST) that supplies a reset signal, readout signal wiring (RWS) that supplies a readout signal, a storage node whose potential (VINT) changes in accordance with the amount of light received by the diode (D1) in the period from when the reset signal is supplied until when the readout signal is supplied, an amplification element (C1) that amplifies the potential (VINT) in accordance with the readout signal, and a sensor switching element (M2) for reading out the potential amplified in the output wiring. The potential of the screening film (LS), provided on the back surface of the diode, is fixed equal to a constant potential (VLS) which satisfies the following relationship: VLS≥VRST.H.

EFFECT: high sensitivity and high signal-to-noise ratio in a photosensor.

17 cl, 63 dwg

FIELD: physics.

SUBSTANCE: solid-state imaging device includes a substrate, an image sensor region and a signal processing circuit, which are electrically connected to each other, a low-heat conductivity region situated between the image sensor region and the signal processing circuit, and a through hole formed in the substrate. The low-heat conductivity region is situated in the through hole and has lower heat conductivity than the substrate.

EFFECT: easy reduction of dimensions and improved quality of the captured images.

19 cl, 25 dwg

Display device // 2507605

FIELD: physics.

SUBSTANCE: optical sensor provided on the substrate of the active matrix of a display device includes: a photodiode (D1a) for receiving incident light; a reset signal line (RSTa) for transmitting a reset signal (RST) to the optical sensor; a readout signal line (RWSa) for transmitting a readout signal (RWS) to the optical sensor; and a sensor switching element (M1a) for reading out a photoelectric current output from the photodiode (D1a), according to the readout signal, during a period from the transmission of the reset signal to the transmission of the readout signal. The potential VLS of a light shielding film (LS) provided on the back side of the photodiode (D1a) is set at a high level potential during a period which overlaps the period while the reset signal is transmitted.

EFFECT: high accuracy when capturing images by improving linearity of the sensitivity characteristics of the photodiode.

5 cl, 21 dwg

FIELD: physics, optics.

SUBSTANCE: invention relates to image capturing devices. The solid-state image capturing device includes a plurality of pixels, each having a photoelectric conversion area configured to generate charges in accordance with incident light, a charge retention area configured to include a first semiconductor region with a first conductivity type, and a transfer area configured to include a transfer gate electrode which controls potential between the charge retention area and a reading unit. The charge retention area includes a control electrode. A second semiconductor region with a second conductivity type lies on the surface of the semiconductor region between the control electrode and the transfer gate electrode. A third semiconductor region with a first conductivity type lies under the second semiconductor region. The third semiconductor region lies deeper than the first semiconductor region.

EFFECT: invention increases efficiency of charge transfer from the charge retention area to a floating diffusion region.

8 cl, 7 dwg

FIELD: physics.

SUBSTANCE: in a solid-state image capturing device, a photoelectric conversion portion, a change retention portion, a transfer portion and a reading unit are formed in a p-type pocket. The charge retention portion is configured to include an n-type semiconductor region which is a first semiconductor region which holds charges in a portion different from the photoelectric conversion portion. A p-type semiconductor region, having a higher concentration than the p-type pocket, is situated under the n-type semiconductor region.

EFFECT: enabling charge transfer at low voltage, first by preventing expansion of the depletion layer during transfer of charges from the charge retention portion to a floating diffusion region and, secondly, by preventing narrowing of the transfer channel between the charge retention portion and the floating diffusion region.

33 cl, 13 dwg

FIELD: physics.

SUBSTANCE: image-forming apparatus includes an array of sub-diffraction limit-sized light receptors formed in a substrate having a light receiving surface. Each light receptor is configured to output a scalar valued multi-bit element and change state based on absorption of at least one photon. The apparatus further includes an optical filter system disposed over the light receiving surface, the optical filter system having an array of filter pixels each having an associated pass-band spectral characteristic. A data element obtained from the array of sub-diffraction limit-sized light receptors includes a combination of a plurality of the multi-bit elements output from a plurality of light receptors that underlie filter pixels having at least two different pass-band spectral characteristics.

EFFECT: high optical sensor sensitivity and improved colour accuracy.

20 cl, 11 dwg

FIELD: physics.

SUBSTANCE: solid-state image sensor includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type in contact with the bottom surface of the first semiconductor region and operating as a charge accumulation region, a third semiconductor region, which includes side surfaces surrounded by the second semiconductor region, a fourth semiconductor region of a second conductivity type, situated away from the second semiconductor region, and a transfer gate which forms a channel for transferring charges accumulated in the second semiconductor region into the fourth semiconductor region. The third semiconductor region is a region of a first conductivity type or second conductivity type, and concentration of impurities therein is less than that in the second semiconductor region. The third semiconductor region has a top surface in contact with the second semiconductor region.

EFFECT: meeting requirements for the number of charges in saturation state, operating parameters for transfer and sensitivity of the disclosed image sensor.

3 cl, 9 dwg

FIELD: physics, optics.

SUBSTANCE: invention relates to optical-electronic devices intended for autofocusing of objective lenses. The method consists in evaluation of sharpness, at which for each pixel of the image the conversion of RGB signals of main colours into uniform colour space is performed. For this purpose the image is scanned using a sliding window with the sizes 3×3. At each iteration in the window the algorithm of recognition of the image of fine structure is performed. Binary images of fine structures are used for recognition, using which the spatial coordinates of pixels of object and background are determined. The analysis is performed for all types of fine structures, starting from the first one (point object). The average values of coloured coordinates of the background and object are calculated, the requirements of colour difference between adjacent pixels of the background and between adjacent pixels of object, noticeable for eyes are checked. The object contrast with reference to the background is calculated, at which the fine details are resolved by eyes, meanwhile the point object is considered recognized and its spatial coordinates of centre are fixed. Parameter of the image sharpness is estimated by count of total amount of the recognized blocks in percentage ration to the total number of the image pixels.

EFFECT: improvement of accuracy of focusing at shooting of small objects with low contrast.

3 dwg

FIELD: physics, optics.

SUBSTANCE: invention relates to optical-electronic devices intended for autofocusing of objective lenses. The method consists in evaluation of sharpness, at which for each pixel of the image the conversion of RGB signals of main colours into uniform colour space is performed. For this purpose the image is scanned using a sliding window with the sizes 3×3. At each iteration in the window the algorithm of recognition of the image of fine structure is performed. Binary images of fine structures are used for recognition, using which the spatial coordinates of pixels of object and background are determined. The analysis is performed for all types of fine structures, starting from the first one (point object). The average values of coloured coordinates of the background and object are calculated, the requirements of colour difference between adjacent pixels of the background and between adjacent pixels of object, noticeable for eyes are checked. The object contrast with reference to the background is calculated, at which the fine details are resolved by eyes, meanwhile the point object is considered recognized and its spatial coordinates of centre are fixed. Parameter of the image sharpness is estimated by count of total amount of the recognized blocks in percentage ration to the total number of the image pixels.

EFFECT: improvement of accuracy of focusing at shooting of small objects with low contrast.

3 dwg

FIELD: photography.

SUBSTANCE: photoelectric conversion device has light-receiving elements, arranged on plane of image generation. Light-receiving element include a plurality of portions of photoelectric conversion, built in a first direction parallel to plane of image formation, through insulating portion, and a light guide portion, extending along plurality of portions of photoelectric conversion. In first plane, parallel to plane of image generation and crossing light guide portion, maximum width of light guide portion in first direction is greater than maximum width of light guide portion in second direction, parallel to plane of image generation and orthogonal to first direction.

EFFECT: invention can improve accuracy of dividing light into a plurality of portions of photoelectric conversion.

11 cl, 10 dwg

FIELD: image forming devices.

SUBSTANCE: invention relates to a photoelectric conversion device and to an imaging system. Photoelectric conversion device according to the invention includes a pixel, which includes a photoelectric conversion unit, a reset transistor and an amplification transistor, which outputs a signal from the photoelectric conversion unit. Photoelectric conversion unit includes the first electrode, the second electrode, a photoelectric conversion layer and an insulating layer placed between the photoelectric conversion layer and the second electrode. Photoelectric conversion unit alternately performs accumulation and discharge operations in accordance with the voltage between the first electrode and the second electrode. Between two successive discharge operations of multiple discharge operations the reset operation, when the reset transistor resets voltage at the second electrode, is performed multiply.

EFFECT: invention provides improvement of the dynamic range.

20 cl, 21 dwg

FIELD: manufacture of multi-element integration photo-receivers, for example, for video cameras and digital photography.

SUBSTANCE: photo-receiving cell is made on silicon substrate of first conductivity type with non-rectifying contact and includes: first, second and third areas, which have mutual position and configuration, ensuring forming of first and second channels for diffusion of minor charge carriers, generated in areas of substrate, located below first and second potential barriers in accordance to first and third p-n barrier. Length of channels does not exceed diffusion length of minor charge carriers.

EFFECT: increased spatial resolution of image being projected, dynamic range and decreased cell area.

6 dwg

FIELD: microelectronics; multicomponent integrated photodetectors such as single-chip digital video cameras; digital photography.

SUBSTANCE: proposed color-division photodetector cell has first p-n junction partially disposed in separate first, second, and third regions of silicon substrate. These regions are isolated by insulator; second p-n junction is disposed in surface part of second and third insulated regions and is formed by inversion layer initiated when polycrystalline silicon layers disposed on silicon dioxide layer above second and third regions are placed at positive potential. Disposed in substrate under first and second regions and deepened in effective surface below first p-n junction is additional region of same polarity of conductivity as substrate that forms potential barrier for minority charge carriers generated in substrate region disposed deeper than barrier.

EFFECT: reduced noise level, ability of attaining compatibility between photocells and complementary metal-oxide-semiconductor reading components and other control circuits of photodetectors.

3 cl, 1 dwg

FIELD: microelectronics; multicomponent integrated photodetectors, such as video cameras, and digital photography.

SUBSTANCE: proposed color-division photodetector cell has first p-n junction disposed in first individual substrate region separated by insulator, second p-n junction disposed in surface part of second insulated region and formed by inversion layer initiated when polycrystalline silicon layer disposed on silicon dioxide layer above the latter is placed at positive potential. Disposed under first p-n junction is first additional region of same polarity of conductivity as that of substrate to form potential barrier for charge carriers, first additional region of polarity of conductivity reverse to that of substrate being disposed under first additional region of reverse polarity of conductivity; abutting against the latter is second insulated region of polarity of conductivity reverse to that of substrate provided with ohmic contact. Second additional region of polarity of conductivity same to that of substrate disposed under mentioned regions forms potential barrier for charge carriers generated in substrate.

EFFECT: reduced color-division noise level of integrated photodetectors; provision for compatibility between photocells and reading complementary metal-oxide-semiconductor and other control circuits of photodetectors.

1 cl, 1 dwg

FIELD: physics.

SUBSTANCE: invention refers to computer vision facilities and can be used in multispectral photodetector arrays, in particular for transformation of colour images of advanced format and high pixel density to electric signals in photo and video cameras. According to invention, photoreceiving cell with vertical colour separation is made as follows. Electrical reading circuit is connected to near-surface region of first conductivity type, while regime reading voltage is supplied to it. Charges of first polarity current carriers accumulated within exposure are formed to be carried to reading circuit from under areas of first conductivity type in areas of the second conductivity type located between all areas of first conductivity type. Vertical channel is formed through corresponding selection within channel areas, with concentration of barrier and base areas, and also their thickness, providing potential wells in areas of first conductivity type for first polarity current carriers of sufficient dimension to collect and store charges first polarity current photocarriers without interference. Note that reading circuit is designed so that it supplies regime reading voltage time-consistently to near-surface region of first conductivity type relative to reference areas at rate multiple to number of potential well representing a reading source, and respectively sufficient for successive charge flow from one potential well to another and to reading circuit from the first, second, third etc potential wells comprising the first, second, third etc areas of first conductivity type.

EFFECT: smaller cell area.

4 dwg

FIELD: information technology.

SUBSTANCE: invention relates to machine vision technology and can be used in high resolution video cameras and still cameras which use digital processing for optimising signals. The photodetecting device contains a signal processing device which corrects characteristics of colour channels based on their correlation, photodetector cells with vertical colour separation, each of which contains a reading circuit, detectors for blue, green and red components of received radiation, made in a semiconductor structure, with horizontal areas of first type of conductivity, lying on first, second and third depths with respect to the surface of the structure, respectively optimised on maximum absorption of blue, green and red radiation components, connected through p-n junctions by areas of first and/or second, opposite the first, type of conductivity with the near-surface areas of the second type of conductivity, surrounded by areas of the first type of conductivity with distribution of concentration of impurities, which creates a potential barrier for movement of minority current carriers in them. The following is proposed: a horizontal area, lying at the third depth, making a layer for all cells on the substrate with first type of conductivity, carry out correction of space-frequency characteristics for the red channel, spectral characteristics of blue, green and red colour channels in the signal processing device, suppression of specified spatial colour noise, regulate sharpness and depth taking into account technologically restricted spatial bands of the red component.

EFFECT: simpler technology, reduced cost while maintaining good characteristics of the photodetecting device due cheap digital correction of signals based on high correlation dependence of characteristics of colour components.

2 dwg

FIELD: physics; image processing.

SUBSTANCE: invention relates to systems for forming and processing image data, which are used in video cameras for recording moving images, still image electronic cameras and tracking devices. The technical outcome is achieved due to that, the device for taking images and a device for compressing images are integrally connected using a wiring layer, formed on the surface of the device for taking images, lying opposite the surface of the device for taking images on which light is incident. The device for taking images provides for image data processing modules in series, related to the image compression process. Image data of the partial region in the effective imaging region are pre-compressed for detecting code values. The data compression ratio is determined based on the code value, and image data are compressed with that image compression ratio.

EFFECT: design of a simple structure, which allows for efficient use of high degree of freedom for reading image data.

8 cl, 20 dwg

FIELD: physics; image processing.

SUBSTANCE: invention relates to a device for taking images and can be used, for instance, in video cameras, electronic still image cameras and tracking devices. A device is proposed for taking images, in which an apparatus (3) for taking images and an apparatus (6) for compressing images are connected to each other using a wiring layer, formed on the surface opposite the image taking surface of the apparatus (3) for taking images, and that way, are integrated into each other. The data compression ratio, used for compressing data of at least the next unit is varied, based on the amount of code, generated during compression of resultant data S1 from taking an image in a separate unit. The resultant data S1 from taking an image for each photovoltaic conversion module is output from apparatus (3) for taking images, such that, it corresponds to processing in a separate unit.

EFFECT: efficient use of high degree of freedom for reading taken images, which is a property of a solid-state image taking element with simplification of the general configuration and reliability of controlling.

12 cl, 16 dwg

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