Active element of semiconductor laser with transverse pumping by electron beam

FIELD: laser engineering.

SUBSTANCE: active element of semiconductor laser with transverse pumping by electron beam comprises rectangular plate from semiconductor material, having first surface, irradiated with electrons, second surface parallel to first, by which it is fixed on substrate, and two side surfaces, forming optical resonator. Plate is multilayer semiconductor heterostructure, having wave-guiding layer, located next to first surface, and passive wave-guiding layer with low coefficient of absorption of radiation generated in optical resonator, arranged between active wave-guiding layer and substrate, wherein passive wave-guiding layer has optical connection with active wave-guiding layer.

EFFECT: technical result consists in increasing of radiation output power with pumping electrons energy reduction.

6 cl, 3 dwg

 



 

Same patents:

FIELD: physics, optics.

SUBSTANCE: disclosed group of inventions relates to semiconductor lasers. The semiconductor laser includes a heterostructure grown on a substrate having a buffer layer, a coating layer, a contact layer, an active region with an active quantum well or active quantum wells, made in a p-n and/or p-i-n junction, formed in the surrounding semiconductor layers, with the refraction index of the active quantum well or refraction indices of the active quantum wells greater than the refraction index of the surrounding semiconductor layers. A waveguide is formed by all layers of the heterostructure owing to difference in the refraction indices of the active quantum well or active quantum wells and the surrounding semiconductor layers, wherein the substrate is doped more than the region with the quantum well or the region with the quantum wells, the doping level of the substrate is 1018-3*1018 cm-3, the buffer layer has the same doping level as the substrate, the coating layer is less doped than the substrate, the doping level of the coating layer is 1017-5*1017 cm-3, the contact layer is heavily doped, the doping level of the contact layer is 1019-5*1019 cm-3.

EFFECT: reduced transverse divergence of radiation, reduced internal optical losses, cheaper and easier manufacturing.

4 cl, 5 dwg

FIELD: physics, optics.

SUBSTANCE: invention relates to quantum electronic engineering. The integrated injection laser includes an upper control region of second conductivity type which adjoins an upper waveguide layer, a lower control region of second conductivity type which adjoins a lower waveguide layer, a lower control region of first conductivity type which adjoins a substrate at the top and the lower control region of second conductivity type at the bottom to form a p-n junction, an ohmic contact to the lower control region of first conductivity type, a control metal contact adjoining the upper control region of second conductivity type at the top to form a Schottky junction. The lower boundary of the conduction band of the lower waveguide layer lies below the lower boundary of the conduction band of the quantum-size active region and higher than the lower boundary of the conduction band of the upper waveguide layer. The upper boundary of the valence band of the lower waveguide layer lies below the upper boundary of the valence band of the active region and higher than the upper boundary of the valence band of the upper waveguide layer.

EFFECT: faster operation of the device.

3 dwg

FIELD: electricity.

SUBSTANCE: in a multibarrier heterostructure for generation of powerful electromagnet radiation of subterahertz and terahertz frequency ranges, representing a multilayer heterostructure from alternating layers of narrow-zone and wide-zone semiconductors, where the layer of the wide-zone semiconductor is an energy barrier ΔEC for electrons from the narrow-zone layer, according to the invention, thicknesses d of heterolayers are selected from the condition Dτ>d>30,nm where D - coefficient of electron diffusion, and τ - time of relaxation of excessive thermal energy of electrons into a lattice; wide-zone (barrier) layers are not alloyed, and concentration of donors Nd in narrow-zone layers meets the condition of 1017 cm-3≤Nd≤1018 cm-3; height of energy barrier ΔEC>6kT; quantity of alternating pairs of narrow-zone and wide-zone layers is n>4. Besides, the material of the wide-zone barrier layer in the first pair differs from all other, subsequent ones, and providing for lower height of the first energy barrier compared to the subsequent ones.

EFFECT: increased capacity and expanded frequency range of compact generators of terahertz radiation.

2 cl, 3 dwg

FIELD: physics.

SUBSTANCE: frequency-tuned terahertz and far-infrared coherent source is based on a semiconductor nanoheterostructure and is excited by middle infrared band pulses. Between the source of exciting pulses and the semiconductor nanoheterostructure there is a filter in form of a plate with periodically alternating transparent and opaque strips to achieve spatial periodicity of polarisation, which is excited in the active region of the semiconductor nanoheterostructure.

EFFECT: high radiation power.

3 dwg

FIELD: physics.

SUBSTANCE: invention relates to semiconductor frequency-tuned infrared sources based on a disc resonator laser working on whispering gallery modes (WGM). Such infrared sources can be used in spectrometry, medicine, optical communication and information transmission systems, in optical ultrahigh speed computer and switching systems and when designing medical equipment. The semiconductor frequency-tuned infrared source has a semiconductor frequency-tuned disc laser for the wavelength range 1.8-4.5 mcm and two voltage sources. The laser has GaSb substrate, a quantum-dimensional heterostructure grown on the substrate, a resonator and top and bottom ohmic contacts. The heterostructure consists of an active region, boundary layers of GaAISbAs and a GaSb contact layer. The active region contains waveguide layers of GaAIAsSb, at least one quantum well of Ga1-XInXASYSb1-Y with the dominant mode of composition and wavelength ranging from 2 nm to 30 nm selected according to the required wavelength range of 1.8-4.5 mcm. The resonator is in form of a disc or a sector of a disc. The bottom ohmic contact is deposited on the substrate and the top ohmic contact is deposited on the front surface of the resonator and consists of two parts electrically insulated from each other. The voltage sources are such that constant or phase-synchronised pulsed voltage of opposite polarity to that of the bottom contact can be applied across the two parts of the said top ohmic contact.

EFFECT: invention increases the range of frequency-tuning the dominant mode of the source.

4 ex, 2 dwg

FIELD: information technology.

SUBSTANCE: active zone is superlattice made in form of a heterostructure from AIIIBV type compounds and provides periodic variation of energy of the bottom of the conduction band of the structure. The superlattice has a lattice constant d, consisting of one potential quantum well and a narrow potential barrier whose width is 3-20 times less than the width of the potential quantum well. The working transition in the active zone when voltage is applied is the transition between the Wannier-Stark ground level in one potential quantum well and the first Wannier-Stark excited level in the well, lying at a distance of two or more superlattice constants d.

EFFECT: possibility of frequency tuning in a wide range owing to change in the applied voltage.

4 dwg

FIELD: physics.

SUBSTANCE: process of semiconductor device manufacturing in semiconductor structure provides improved quantum well intermixing in the desired parts of the device by forming of high-quality epitaxial layer on substrate, the layer featuring a quantum well; forming of second, low-quality flawed epitaxial layer over the high-quality layer; and thermal processing of the structure for obtaining of at least partial diffusion of flaws to the high-quality layer for intermixing of quantum wells in the structure. At that, flawed epitaxial layer is formed by change of original element ratio during growth beyond ideal or stoichiometrical conditions for obtaining crystal lattice flaws. Also a device manufactured by this process is offered.

EFFECT: quantum well intermixing at lower temperatures and improvement of the device characteristics.

22 cl, 12 dwg

FIELD: semiconductor light-emitting devices such as diodes.

SUBSTANCE: proposed invention relates, in particular, to light-emitting diodes built around broadband compounds of AIIIBV type that function to emit light in blue region of visible spectrum whose wavelength is 450 - 500 nm. Element structure incorporates substrate, buffer layer made of nitride material, n-contact layer made of Si-doped GaN, active layer with two or more quantum wells made of InxGa1 - xN, and barriers separating these wells and made of Si-doped nitride material, emitter layer made of Mg-doped AlYGa1 - yN, and p-contact layer made of Mg-doped nitride material. Molar fraction of indium X linearly reduces in InxGa1 - xN through thickness of quantum wells from 0.35 to 0.1 toward n-contact layer. Molar fraction of aluminum Y in emitter layer composition linearly reduces from its maximum value of 0.3 + Z on emitter layer surface bordering the active layer to Z on emitter layer surface bordering p-contact layer, where Z is molar fraction of aluminum in p-contact layer composition using AlZGa1 - ZN as nitride material, where 0 ≤ Z ≤ 0.1. Active layer is doped with Si, where Si concentration is minimum 5 x 1018cm-1; thickness "h1" of active-layer quantum wells is 1.5 ≤ h1 ≤ 3 nm; thickness "h2" of barriers separating quantum wells is 5 ≤ h2 ≤ 15 nm, and thickness "hc" of emitter layer is 10 ≤ hc ≤ 30 nm.

EFFECT: enhanced efficiency of light-emitting diodes.

1 cl, 1 dwg, 1 tbl

FIELD: optoelectronics; manufacture of quantum-size light-emitting heterostructures including lasers operating in infrared wave band.

SUBSTANCE: proposed method includes sequential growing of following layers on GsAs substrate by GaAs molecular-beam epitaxy: GaAs buffer layer; lower emitter layer basing on AlGaAs compound; lower part of GaAs waveguide layer; active region formed at substrate temperature of 350 - 380 °C by sequential deposition of GaAsN/InGsAsN superlattice of following chemical composition: indium, 35 - 50% and nitrogen, 2 - 4%, incorporating at least one GaAsN layer and at least one InGsAsN layer, central InAs layer, 0.3 - 0.5 nm thick, GaAsN/InGaAsN superlattice incorporating at least one GaAsN later and at least one InGaAsN later of following chemical composition: indium, 35 - 50% and nitrogen, 2 - 4%, ratio of Group V element currents to group III ones being 1.5 - 5.0, upper part of GsAs waveguide layer, and upper emitter layer based on AlGaAs compound; GaAs contact layer. Proposed light-emitting structure is characterized in affording radiation wavelength of 1.30 to 1.55 μm and has GaAs substrate whereon following layers are grown: GaAs buffer layer; lower emitter layer formed of alternating AlAs and GaAs layers; GaAs waveguide layer with active region in the form of two GaAsN/InGaAsN superlattices abutting against central InAs layer; upper emitter layer based on AlGaAs compound; and GaAs contact layer; each of mentioned superlattices has at least one GaAsN layer and at least one InGaAsN layer.

EFFECT: enhanced radiation wavelength at low threshold current density, high gain, and high differential efficiency.

12 cl, 5 dwg

Injection laser // 2230411

FIELD: physics.

SUBSTANCE: semiconductor infrared source includes a semiconductor substrate (1) with two optically connected and geometrically spaced-apart disc resonators (2) or annular resonators (10) in form of a heterostructure. On the surface of the semiconductor substrate (1) lying opposite the surface with the disc resonators (2) or annular resonators (10) there a first ohmic contact (3). A second ohmic contact (8) is deposited on the face of the corresponding disc resonator (2) or annular resonator (10). The distance from the outer edge of the second contact to the inner edge of the resonator is not more than 100 mcm. The disc resonators (2) or annular resonators (10) lie from each other at a distance L or overlap in the region of waveguides at a depth D, said distance and depth satisfying certain relationships.

EFFECT: simple design and reducing optical loss during single-mode oscillation in the middle infrared spectrum.

2 cl, 14 dwg

FIELD: electricity.

SUBSTANCE: device includes at least one multilayer interference reflector and at least one resonator. In one version of the invention implementation the reflector works as a modulating element controlled by the voltage applied thereto. The stop zone edge is subjected to adjustment using electrooptic methods due to quantum-limited Stark effect in proximity to resonant mode which creates modulation of the reflector transmission factor thus entailing indirect modulation of light intensity. In another version of the invention implementation the optic field profile in the resonator represents the stop zone wavelength shift function, the device working as adjustable wavelength light radiator. In yet another version of the invention implementation at least two periodicities of refraction factor distribution are created in the reflector which enables suppression of parasitic optical modes and promotes high-speed direct modulation of intensity of light emitted by the device.

EFFECT: vertically integrated optoelectronic device serving for high-speed data transfer by way of direct or indirect modulation of emitted light intensity.

11 cl, 34 dwg

FIELD: electricity.

SUBSTANCE: resonator has circular section and is made in the form of a revolution solid. The revolution solid comprises an active area, facing layers and a part of a substrate. A generatrix of the side surface of the revolution solid is inclined relative to the normal line of a heterostructures.

EFFECT: possibility to output radiation, which is wideband by wave length, in vertical direction.

2 dwg

Dipole nanolaser // 2391755

FIELD: physics.

SUBSTANCE: dipole nanolaser for generating coherent electromagnetic radiation includes a two-level system in form of a quantum dot and a coherent electromagnetic radiation resonator. The resonator, which has a metal or semiconductor nanoparticle and electrocontact plates, has one more nanoparticle which lies from the said nanoparticle and from the said quantum dot at distances less than wavelength of the coherent electromagnetic radiation generated by the said nanolaser. Both nanoparticles are capable of exciting dipole oscillation modes in antiphase at the frequency of the said coherent electromagnetic radiation.

EFFECT: higher Q-factor of the resonator of the dipole nanolaser.

1 dwg, 1 ex

FIELD: physics.

SUBSTANCE: holder for depositing optical coatings on sets of strips of light-emitting elements has a base with a window for the support element and has guide clamping elements made in form of prismatic bars whose working planes lie on butt-ends of their cross section; a support element and a locking mechanism. The support element is at an angle (0-45)°, and dimensions of the cross profile of the clamping element are related to the thickness of the strip of the light-emitting element, the number of strips in a set and the number of sets in the holder by an expression.

EFFECT: broader technological capabilities of the holder for depositing optical coatings, higher quality of products and cost-effectiveness of production.

1 tbl, 5 dwg

FIELD: electrical engineering.

SUBSTANCE: proposed active element comprises heterostructure built around semiconductor compounds selected from groups A2B6 or A3B5. Active structure is arranged between upper and lower limiting semiconductor layers that make, together with active structure, an optical waveguide. Said active structure comprises at least two alternating superfine semiconductor layers with different refraction factors and at least one active layer arranged between aforesaid two layers that has higher refraction factor than that of alternating layers. Note here that upper and lower limiting layers have higher refraction factor compared with layers of active structure. Thickness h of upper limiting layer satisfies the condition h<x, where x is the depth of electron beam penetration into active structure. Outer surface of upper limiting layer has corrugated relief with direction of corrugations perpendicular to active element optical axis. Note here that relief spacing equals whole number of half-waves of laser radiation in active layer material. Note also that corrugation depth does not exceed height h of upper limiting layer.

EFFECT: higher output power.

3 cl, 4 dwg, 1 ex

The invention relates to the field of laser technology, in particular to systems diode pumping, medical lasers, and laser systems used in computers, office equipment and entertainment industry

The invention relates to the field of quantum electronics, semiconductor lasers with transverse pumping excitation beam

Optical device // 2153746

FIELD: electrical engineering.

SUBSTANCE: proposed active element comprises heterostructure built around semiconductor compounds selected from groups A2B6 or A3B5. Active structure is arranged between upper and lower limiting semiconductor layers that make, together with active structure, an optical waveguide. Said active structure comprises at least two alternating superfine semiconductor layers with different refraction factors and at least one active layer arranged between aforesaid two layers that has higher refraction factor than that of alternating layers. Note here that upper and lower limiting layers have higher refraction factor compared with layers of active structure. Thickness h of upper limiting layer satisfies the condition h<x, where x is the depth of electron beam penetration into active structure. Outer surface of upper limiting layer has corrugated relief with direction of corrugations perpendicular to active element optical axis. Note here that relief spacing equals whole number of half-waves of laser radiation in active layer material. Note also that corrugation depth does not exceed height h of upper limiting layer.

EFFECT: higher output power.

3 cl, 4 dwg, 1 ex

FIELD: physics.

SUBSTANCE: holder for depositing optical coatings on sets of strips of light-emitting elements has a base with a window for the support element and has guide clamping elements made in form of prismatic bars whose working planes lie on butt-ends of their cross section; a support element and a locking mechanism. The support element is at an angle (0-45)°, and dimensions of the cross profile of the clamping element are related to the thickness of the strip of the light-emitting element, the number of strips in a set and the number of sets in the holder by an expression.

EFFECT: broader technological capabilities of the holder for depositing optical coatings, higher quality of products and cost-effectiveness of production.

1 tbl, 5 dwg

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