Memory cell for complementary metal-oxide-semiconductor ram structure

FIELD: computer engineering.

SUBSTANCE: invention relates to computer engineering and can be used in units os multi-port static CMOS RAM. Memory cell for complementary microcircuit of metal-oxide-semiconductor structure RAM includes trigger, consisting of two groups of transistors, ports data recording and reading ports arranged on-chip integrated circuit, outputs of data recording ports are connected to corresponding outputs of two groups of transistors of trigger, according to the invention cell is equipped with two inverters and two inverters to third state, first outputs of first and second groups of transistors are connected to trigger input of first inverter, second outputs of first and second groups of transistors are connected to trigger input of second inverter, third output of first group of transistors of trigger and third output of second groups of transistors of trigger are connected to first inputs of first and second inverters to third state, output of first inverter is connected to second input of first and third input of second inverters to third state, output of second inverter is connected to third input of first and second input of second inverters to third state outputs of which are connected to inputs of data read ports.

EFFECT: technical result consists in improvement of reliability of reading data from memory cell at impact of single nuclear particles in conditions when trigger memory cell based on two groups of transistors is in unbalanced state.

2 cl, 3 dwg, 3 tbl

 



 

Same patents:

FIELD: physics, computer engineering.

SUBSTANCE: magnetic random access memory (MRAM) cell comprises a magnetic tunnel junction comprising a tunnel barrier layer between a first magnetic layer having a first magnetisation direction, and a second magnetic layer having a second magnetisation direction being adjustable from a first direction to a second direction so as to vary junction resistance of the magnetic tunnel junction from a first to a second junction resistance level. Said magnetic tunnel junction further comprises a resistive switching element electrically connected to the magnetic tunnel junction and having a switching resistance which can be switched from a first to a second switching resistance level when a switching current passes through the resistive switching element. The MRAM cell resistance can have at least four different cell resistance levels depending on the resistance level of the junction resistance and the switching resistance. The tunnel barrier layer consists of a resistive switching element.

EFFECT: improved readability for a MRAM cell.

13 cl, 6 dwg, 3 ex

FIELD: physics.

SUBSTANCE: invention relates to microelectronics. An element library based on complementary metal-oxide-semiconductor (MOS) transistors, comprising a p-type substrate and an n-type pocket, n- and p-type MOS transistor active regions, p+ and n+ contacts for the zero potential and supply bus, further includes an extended n+ protection located along the outer boundary of the pocket and which fills the entire free area of the pocket, as well as an annular p+ protection around each of the n-type transistor groups with drain/gate regions of transistors with different potential, which fills the entire free area of the substrate.

EFFECT: creating a radiation-resistant element library based on complementary metal-oxide-semiconductor transistors with a smaller area of elements on the chip and faster operation.

5 dwg

FIELD: information technology.

SUBSTANCE: read signal is applied to a bit line connected to a memory array including a plurality of memory cells, each of the plurality of memory cells having a magnetic tunnel junction (MTJ) device; positive voltage is applied to a selected word line connected to a selected memory cell of the memory array; negative voltage is applied to unselected word lines connected to the memory array; and the negative voltage is applied to each word line during a standby state.

EFFECT: reduced stray current in magnetic random access memory.

25 cl, 7 dwg

FIELD: information technologies.

SUBSTANCE: nonlinear memory cell represents arbitrary geometrically shaped set of arbitrary number of memory elements of arbitrary type which are connected by data bus lines in arbitrary order. The memory elements may be distributed over arbitrary surface or in arbitrary volume.

EFFECT: increase in data processing rate.

1 dwg

FIELD: information technology, physics.

SUBSTANCE: Boolean logic function is constructed when recording the memorising information in the accomplished normal disjunctive form. The argument of this form is the address of memorised information and its value is the memorised information. After that the Boolean logic function gets converted into Zhegalkin polynomial, then the number of elementary Boolean operations, being a part of Zhegalkin polynomial, gets minimised, and then the minimised Zhegalkin polynomial gets realised on the programmed integrated circuit logic.

EFFECT: decrease of general-circuit expenditures for memorising the digital information.

2 tbl

FIELD: electric engineering, possible use in new generation of computers, informational communication systems, intelligent sensors, bio-passports, control systems.

SUBSTANCE: memory element based on planar Hall effect is made on a substrate, on which positioned serially are dielectric layer, recording ferromagnetic film, consisting of first protective layer, ferromagnetic nanostructure with light magnetization axis, directed along the length of film and second protective layer, first isolating layer, record conductor, second isolating layer, and contains a reading cross-shaped magnetic structure based on planar Hall effect on dielectric layer, which structure consists of third protective layer, magnetic nanostructure and fourth protective layer, and also of third isolating layer, positioned on record conductor, fourth isolating layer, positioned above record conductor, on top of which the reading conductor is positioned, mounted above the cross-shaped reading structure based on planar Hall effect and along recording ferromagnetic film.

EFFECT: reduced error of measurements, increased trustworthiness of accumulation and processing of information.

2 dwg

FIELD: technology for recording data, linked with other data.

SUBSTANCE: data production device has module for assigning numeric value, meant for assigning from number of multiple numeric values, stored on data carrier, of numeric value, appropriate for data file, subject for extraction, while numeric value is additional basic n value, where n - integer value higher than one. Device also has module for forming path name, meant for forming name by insertion of symbol, appropriate for numeric value, into each preset position in given formed symbols string, and receiving module, meant for extraction of data file, if in data carrier additional file is present with path name, formed by path name forming module.

EFFECT: decreased data-occupied space in memory.

4 cl, 12 dwg

The memory cell // 2224356
The invention relates to the field of pulse technique and can be used in devices of computer engineering and control systems

The memory cell // 2222100
The invention relates to the field of pulse technique and can be used in devices of computer engineering and control systems

The invention relates to programmable memory elements, to a method and device for reading, writing, and programming

FIELD: technology for recording data, linked with other data.

SUBSTANCE: data production device has module for assigning numeric value, meant for assigning from number of multiple numeric values, stored on data carrier, of numeric value, appropriate for data file, subject for extraction, while numeric value is additional basic n value, where n - integer value higher than one. Device also has module for forming path name, meant for forming name by insertion of symbol, appropriate for numeric value, into each preset position in given formed symbols string, and receiving module, meant for extraction of data file, if in data carrier additional file is present with path name, formed by path name forming module.

EFFECT: decreased data-occupied space in memory.

4 cl, 12 dwg

FIELD: electric engineering, possible use in new generation of computers, informational communication systems, intelligent sensors, bio-passports, control systems.

SUBSTANCE: memory element based on planar Hall effect is made on a substrate, on which positioned serially are dielectric layer, recording ferromagnetic film, consisting of first protective layer, ferromagnetic nanostructure with light magnetization axis, directed along the length of film and second protective layer, first isolating layer, record conductor, second isolating layer, and contains a reading cross-shaped magnetic structure based on planar Hall effect on dielectric layer, which structure consists of third protective layer, magnetic nanostructure and fourth protective layer, and also of third isolating layer, positioned on record conductor, fourth isolating layer, positioned above record conductor, on top of which the reading conductor is positioned, mounted above the cross-shaped reading structure based on planar Hall effect and along recording ferromagnetic film.

EFFECT: reduced error of measurements, increased trustworthiness of accumulation and processing of information.

2 dwg

FIELD: information technology, physics.

SUBSTANCE: Boolean logic function is constructed when recording the memorising information in the accomplished normal disjunctive form. The argument of this form is the address of memorised information and its value is the memorised information. After that the Boolean logic function gets converted into Zhegalkin polynomial, then the number of elementary Boolean operations, being a part of Zhegalkin polynomial, gets minimised, and then the minimised Zhegalkin polynomial gets realised on the programmed integrated circuit logic.

EFFECT: decrease of general-circuit expenditures for memorising the digital information.

2 tbl

FIELD: information technologies.

SUBSTANCE: nonlinear memory cell represents arbitrary geometrically shaped set of arbitrary number of memory elements of arbitrary type which are connected by data bus lines in arbitrary order. The memory elements may be distributed over arbitrary surface or in arbitrary volume.

EFFECT: increase in data processing rate.

1 dwg

FIELD: information technology.

SUBSTANCE: read signal is applied to a bit line connected to a memory array including a plurality of memory cells, each of the plurality of memory cells having a magnetic tunnel junction (MTJ) device; positive voltage is applied to a selected word line connected to a selected memory cell of the memory array; negative voltage is applied to unselected word lines connected to the memory array; and the negative voltage is applied to each word line during a standby state.

EFFECT: reduced stray current in magnetic random access memory.

25 cl, 7 dwg

FIELD: physics.

SUBSTANCE: invention relates to microelectronics. An element library based on complementary metal-oxide-semiconductor (MOS) transistors, comprising a p-type substrate and an n-type pocket, n- and p-type MOS transistor active regions, p+ and n+ contacts for the zero potential and supply bus, further includes an extended n+ protection located along the outer boundary of the pocket and which fills the entire free area of the pocket, as well as an annular p+ protection around each of the n-type transistor groups with drain/gate regions of transistors with different potential, which fills the entire free area of the substrate.

EFFECT: creating a radiation-resistant element library based on complementary metal-oxide-semiconductor transistors with a smaller area of elements on the chip and faster operation.

5 dwg

FIELD: physics, computer engineering.

SUBSTANCE: magnetic random access memory (MRAM) cell comprises a magnetic tunnel junction comprising a tunnel barrier layer between a first magnetic layer having a first magnetisation direction, and a second magnetic layer having a second magnetisation direction being adjustable from a first direction to a second direction so as to vary junction resistance of the magnetic tunnel junction from a first to a second junction resistance level. Said magnetic tunnel junction further comprises a resistive switching element electrically connected to the magnetic tunnel junction and having a switching resistance which can be switched from a first to a second switching resistance level when a switching current passes through the resistive switching element. The MRAM cell resistance can have at least four different cell resistance levels depending on the resistance level of the junction resistance and the switching resistance. The tunnel barrier layer consists of a resistive switching element.

EFFECT: improved readability for a MRAM cell.

13 cl, 6 dwg, 3 ex

FIELD: physics, computer engineering.

SUBSTANCE: invention relates to computer engineering. A method of making static random access memory includes arranging data bit storage units and data read buses and data write buses in space, wherein a memory cell is structurally divided into three types of modules: a data bit storage module, a write port module and a read port module, wherein the write port module is arranged separately from the storage module and connected to the input of the data bit storage module, and the read port module is arranged separately from the storage module and connected to the output of the storage module.

EFFECT: improving noise-immunity of the RAM by reducing the capacitance of parasitic capacitors between components of the device.

3 cl, 3 dwg

FIELD: physics, computer engineering.

SUBSTANCE: invention can be used as ternary content addressable memory. A magnetic random access memory (MRAM) cell includes a first tunnel barrier layer enclosed between a soft ferromagnetic layer, having free magnetisation, and a first hard ferromagnetic layer, having a first storage magnetisation; a second tunnel barrier layer enclosed between a soft ferromagnetic layer and a second hard ferromagnetic layer having a second storage magnetisation; wherein the first storage magnetisation can be freely oriented at a first high predetermined temperature threshold and the second storage magnetisation can be freely oriented at a second predetermined high temperature threshold; wherein the first high predetermined temperature threshold is higher than the second predetermined high temperature threshold.

EFFECT: enabling use of a MRAM cell as ternary content addressable memory (TCAM) with a smaller cell size.

15 cl, 2 dwg, 2 tbl

FIELD: computer engineering.

SUBSTANCE: invention relates to computer engineering and can be used in units os multi-port static CMOS RAM. Memory cell for complementary microcircuit of metal-oxide-semiconductor structure RAM includes trigger, consisting of two groups of transistors, ports data recording and reading ports arranged on-chip integrated circuit, outputs of data recording ports are connected to corresponding outputs of two groups of transistors of trigger, according to the invention cell is equipped with two inverters and two inverters to third state, first outputs of first and second groups of transistors are connected to trigger input of first inverter, second outputs of first and second groups of transistors are connected to trigger input of second inverter, third output of first group of transistors of trigger and third output of second groups of transistors of trigger are connected to first inputs of first and second inverters to third state, output of first inverter is connected to second input of first and third input of second inverters to third state, output of second inverter is connected to third input of first and second input of second inverters to third state outputs of which are connected to inputs of data read ports.

EFFECT: technical result consists in improvement of reliability of reading data from memory cell at impact of single nuclear particles in conditions when trigger memory cell based on two groups of transistors is in unbalanced state.

2 cl, 3 dwg, 3 tbl

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