Semiconductor light emitting device with an axis of symmetry
SUBSTANCE: semiconductor light-emitting device comprises a white optically transparent body coated with a phosphor on the walls. Inside the housing is a laser diode having an axis of symmetry. Wherein the laser diodes are arranged in series on the axis of symmetry of the light emitting devices so that their axes of symmetry coincide. Ends of laser diodes are connected so that they are in electrical and mechanical contact and form an array of laser diodes, the radiation pattern of which has an axis of symmetry coincident with the axis of symmetry of the light emitting device.
EFFECT: technical result is to provide a semiconductor white light emitting device of high intensity light without increasing the size of light-emitting elements, thus providing uniform illumination of the phosphor.
2 cl, 9 dwg
SUBSTANCE: semiconductor infrared source includes a semiconductor substrate (1) with two optically connected and geometrically spaced-apart disc resonators (2) or annular resonators (10) in form of a heterostructure. On the surface of the semiconductor substrate (1) lying opposite the surface with the disc resonators (2) or annular resonators (10) there a first ohmic contact (3). A second ohmic contact (8) is deposited on the face of the corresponding disc resonator (2) or annular resonator (10). The distance from the outer edge of the second contact to the inner edge of the resonator is not more than 100 mcm. The disc resonators (2) or annular resonators (10) lie from each other at a distance L or overlap in the region of waveguides at a depth D, said distance and depth satisfying certain relationships.
EFFECT: simple design and reducing optical loss during single-mode oscillation in the middle infrared spectrum.
2 cl, 14 dwg
SUBSTANCE: device includes at least one multilayer interference reflector and at least one resonator. In one version of the invention implementation the reflector works as a modulating element controlled by the voltage applied thereto. The stop zone edge is subjected to adjustment using electrooptic methods due to quantum-limited Stark effect in proximity to resonant mode which creates modulation of the reflector transmission factor thus entailing indirect modulation of light intensity. In another version of the invention implementation the optic field profile in the resonator represents the stop zone wavelength shift function, the device working as adjustable wavelength light radiator. In yet another version of the invention implementation at least two periodicities of refraction factor distribution are created in the reflector which enables suppression of parasitic optical modes and promotes high-speed direct modulation of intensity of light emitted by the device.
EFFECT: vertically integrated optoelectronic device serving for high-speed data transfer by way of direct or indirect modulation of emitted light intensity.
11 cl, 34 dwg
SUBSTANCE: resonator has circular section and is made in the form of a revolution solid. The revolution solid comprises an active area, facing layers and a part of a substrate. A generatrix of the side surface of the revolution solid is inclined relative to the normal line of a heterostructures.
EFFECT: possibility to output radiation, which is wideband by wave length, in vertical direction.
SUBSTANCE: dipole nanolaser for generating coherent electromagnetic radiation includes a two-level system in form of a quantum dot and a coherent electromagnetic radiation resonator. The resonator, which has a metal or semiconductor nanoparticle and electrocontact plates, has one more nanoparticle which lies from the said nanoparticle and from the said quantum dot at distances less than wavelength of the coherent electromagnetic radiation generated by the said nanolaser. Both nanoparticles are capable of exciting dipole oscillation modes in antiphase at the frequency of the said coherent electromagnetic radiation.
EFFECT: higher Q-factor of the resonator of the dipole nanolaser.
1 dwg, 1 ex
SUBSTANCE: holder for depositing optical coatings on sets of strips of light-emitting elements has a base with a window for the support element and has guide clamping elements made in form of prismatic bars whose working planes lie on butt-ends of their cross section; a support element and a locking mechanism. The support element is at an angle (0-45)°, and dimensions of the cross profile of the clamping element are related to the thickness of the strip of the light-emitting element, the number of strips in a set and the number of sets in the holder by an expression.
EFFECT: broader technological capabilities of the holder for depositing optical coatings, higher quality of products and cost-effectiveness of production.
1 tbl, 5 dwg
FIELD: electrical engineering.
SUBSTANCE: proposed active element comprises heterostructure built around semiconductor compounds selected from groups A2B6 or A3B5. Active structure is arranged between upper and lower limiting semiconductor layers that make, together with active structure, an optical waveguide. Said active structure comprises at least two alternating superfine semiconductor layers with different refraction factors and at least one active layer arranged between aforesaid two layers that has higher refraction factor than that of alternating layers. Note here that upper and lower limiting layers have higher refraction factor compared with layers of active structure. Thickness h of upper limiting layer satisfies the condition h<x, where x is the depth of electron beam penetration into active structure. Outer surface of upper limiting layer has corrugated relief with direction of corrugations perpendicular to active element optical axis. Note here that relief spacing equals whole number of half-waves of laser radiation in active layer material. Note also that corrugation depth does not exceed height h of upper limiting layer.
EFFECT: higher output power.
3 cl, 4 dwg, 1 ex
SUBSTANCE: semiconductor structure for photo converting and light emitting devices consists of semiconductor substrate (1) with face surface misaligned from plane (100) through (0.5-10) degrees and at least one p-n junction (2) including at least one active semiconductor ply (3) arranged between two barrier plies (4) with inhibited zone width Eg0. Active semiconductor ply (3) consists of 1st and 2nd type spatial areas (5, 6) abutting of barrier plies (3) and alternating in the plane of active semiconductor ply (3). 1st type spatial areas (5) feature inhibited zone width Eg1 < Eg0, while 2nd type areas have inhibited zone width Eg2 < Eg1.
EFFECT: higher efficiency owing to increased photo flux and higher level of photo generation and charge carrier separation, higher probability of photon generation and lower probability of radiation-free recombination.
11 cl, 11 dwg, 5 ex
FIELD: physics, optics.
SUBSTANCE: invention can be used to generate a controlled sequence of high-power laser pulses. The laser-thyristor includes a cathode region (1), which includes an n-type substrate (2), a wide-band gap n-type layer (3), an anode region (4), which includes a p-type contact layer (5), a wide-band gap p-type layer (6), which is also the optical confinement layer of the laser heterostructure and the emitter, which injects holes into the active region (13), a first base region (7), a p-type layer (8), a second base region (9), an n-type layer (10), a waveguide region (12), Fabry-Perot optical resonator, formed naturally by a cleavage surface (14) coated with an antireflecting coating and naturally by a cleavage surface (15), a first ohmic contact (16), a second ohmic contact (18), a meso-channel (19), a third ohmic contact (20), wherein parameters of the materials of the layers of the first and second base regions satisfy certain expressions.
EFFECT: increasing peak output optical power and reducing the amplitude of the control signal.
4 cl, 4 dwg
SUBSTANCE: radiation source is in the form of two thin (less than 0.5 mm) plates of heat-resistant glass glued around the periphery in a vacuum-tight manner, on which film electrodes are deposited, with a transparent electrode deposited on plate and a reflecting electrode on the other. A microchannel plate is tightly bonded to the plates in between said plates, the microchannel plate having a discontinuous layer of phosphor and electron emitter nanopowders on the semiconductor surface of its channels. Electron emission, amplification of the flux thereof and cathode luminescence (radiation) occur in the microchannel plate. The plate with the transparent electrode is bonded to a detachable transparent plate on the external side of the housing, said detachable transparent plate having inside it or on its surface nanopowder of a material with a spectral radiation conversion property. Microchannels of the microchannel plate, having length L and diameter w, are inclined at an angle φ to the field lines of the dc or ac voltage V applied between the film electrodes, such that voltage acting on portions of the channel, estimated using the formula V(w/L)tgφ, is established depending on the properties of the selected phosphors and the electron emitter.
EFFECT: wider spectral range, controlling spectral characteristics, high efficiency of electron-photon and electro-optical conversions.
SUBSTANCE: invention relates to lighting engineering and can be used for manufacture of the light sources used as a part of lighting equipment for the general and local external and internal lighting. The LED lamp contains the convex lens, the board with light-emitting diodes installed from the end face side of the hollow radiator and the connector for connection to the power supply circuit placed in the radiator cavity. The technical result is achieved due to that the radiator cavity contains the thin-walled cylinder made of heat-conducting electric insulating material. Between the board and the named cylinder the metal orifice is installed with a possibility of heat exchange, meanwhile on the lower base of the thin-walled cylinder the connector for connecting to the power supply circuit is made.
EFFECT: decrease of axial dimensions of the lamp and improvement of conditions of heat exchange between the board of light-emitting diodes and environment.
3 cl, 2 dwg
SUBSTANCE: invention relates to the lighting device containing a material (2) for the initial light (4) conversion to the secondary light (5), at that the material (2) for conversion contains the converting photoluminescence material (15), that degrades to non-conversion photoluminescence material within time when the material (2) for conversion is lighted by the initial light (4). Material (2) for conversion is adapted such that when the material (2) for conversion is lighted by the initial light (4), the relative concentration decreasing of the conversion photoluminescence material (15) in the material (2) for conversion is higher then relative decreasing of the secondary light (5) intensity.
EFFECT: invention provides the lighting device with the ability to ensure slightly reduced absorbing capacity for the initial light even if major part of the photoluminescence material discolored, and hence more long service life under the same or slightly reduced intensity of the secondary light.
15 cl, 18 dwg
SUBSTANCE: light-emitting diode (LED) comprises a base, a light-emitting structure, a first electrode and a second electrode. An U-shaped electroconductive suspension for the light-emitting structure, which is transparent for the emitted light, is made on the base. The suspension lies on the base with one arm and is rigidly connected to the base. There is a series of elements rigidly connected to the arms between the arms in the direction from the base. The elements comprise an insulating layer, a first electrode, a layer which acts a mirror and a heatsink and a light-emitting structure. The LED is made as follows. A multilayer film element is formed on the base. The materials used are such that the layer geometry and intrinsic mechanical stress thereof enable to obtain a light-emitting structure and U-shaped suspension which is electroconductive and transparent for the emitted light. The step of forming the film element includes successively making a set of layers with intrinsic mechanical stress and a set of layers of the light-emitting structure. For the latter, two areas are formed, which are arranged with a gap with a depth to the last set of layers with intrinsic mechanical stress. Areas of the film element are obtained - an area which corresponds to the arm lying on the base, an area which corresponds to the arm connected to the light-emitting structure and an area corresponding to a loop. An insulating layer, on which the first electrode is made, is formed on the area of the film element which corresponds to the arm lying on the base. A layer which acts the mirror and heatsink is formed on the area of the film element which corresponds to the arm connected to the light-emitting structure. The film element is then partially separated from the base, leaving it connected on the area which corresponds to the arm lying on the base. The set of layers with intrinsic mechanical stress is transformed under the action of the intrinsic mechanical stress into U-shaped suspension with a loop and the obtained light-emitting structure between the arms. During separation, the set of layers of the light-emitting structure with the layer which acts as a mirror and a heatsink is turned over and the latter is brought into contact with the first electrode to form a rigid connection.
EFFECT: high efficiency of converting electrical energy into light energy and heat removal, reducing the dimensions of LEDs and integration with other optoelectronic devices on a single base.
21 cl, 6 dwg
FIELD: physics, optics.
SUBSTANCE: invention discloses a light-emitting device and a method of making said device. The light-emitting device comprises a first layer having top and bottom surfaces, said top surface comprising a first material of a first conductivity type and including a plurality of pits in a substantially flat surface, wherein said top and bottom surfaces are characterised by a distance in between them, which is shorter in said pits than in regions outside said pits; an active layer overlying said top surface of said first layer, wherein said active layer is capable of generating light characterised by a wavelength when holes and electrons recombine therein; a second layer comprising a second material of a second conductivity type, said second layer comprising a top coating layer having top surface and a bottom surface, said bottom surface overlying said active layer and conforming to said active layer, said top surface having depressions therein that extend into said pits; and a substrate on which said first layer is formed, said substrate having a lattice constant sufficiently different from that of the first material to give rise to dislocations in the first layer, wherein said pits are characterised by a bottom point closest to said substrate, said pits arranged such that said bottom point of each of said pits lies at a different one of said dislocations.
EFFECT: high radiation efficiency.
17 cl, 5 dwg
SUBSTANCE: light-emitting device includes a light-emitting element having a light-conducting element and a multilayered semiconductor part, electrodes located on the multilayered semiconductor part in this order. The light-emitting element includes the first area and the second area on the side of the light-conducting element. The light-conducting element includes the third area and the fourth area on the side of the light-emitting element. The first area has non-uniform location of atoms in comparison to the second area. The third area has non-uniform location of atoms in comparison to the fourth area. The first area is connected directly to the third area.
EFFECT: invention proposes a light-emitting device capable of reducing light attenuation in an element and having high light efficiency, and a manufacturing method of the light-emitting device.
16 cl, 3 dwg
FIELD: physics, optics.
SUBSTANCE: device comprises semiconductor structure with light-emitting ply, luminescent material located on the path of light emitted by light emitting ply and thermal-contact material arranged in translucent material. Note here that thermal-contact material does not convert light-emitting ply light wavelength. Thermal-contact material features higher heat conductivity than that of translucent material. Thermal-contact material is located to dissipate heat from luminescence material. Thermal-contact material features the particle median size larger than 10 mcm. Thermal-contact material refraction ratio differs from that of translucent material by less than 10%.
EFFECT: ruled out undesirable shift of colour hue and reduction in light output.
20 cl, 6 dwg
SUBSTANCE: rendering is carried out by irradiating a sample with two-micron laser radiation, the sample having a spectral absorption band close to the spectral band of the laser radiation. The sample used is powder of a ground monocrystal of CaF2:Ho. The powder is deposited using a binding material on a flat surface which reflects two-micron radiation.
EFFECT: simple method and providing high contrast and resolution in a wide range of radiation power density.
SUBSTANCE: invention relates to lighting fixtures based on solid-state semiconductor light sources. The device consists of the housing, made from heat-conducting material, and light modules. The housing has a central compartment intended for placement at least of one power supply and at least one lighting module and two peripheral compartments intended for placement of lighting modules. The mass of the lighting fixture and its power are related by the following relations: the lighting fixture mass at the lighting fixture power up to 100 W doesn't exceed 2 kg, the mass of the lighting fixture at the power up to 50 W doesn't exceed 0.9 kg.
EFFECT: improvement of efficiency of heat release which is achieved due to use of lighting support consoles or fastening arms, located outside the lighting fixture.
11 cl, 14 dwg, 2 tbl
SUBSTANCE: lighting device includes a casing containing a lower plate; a side wall; a louvre element; a light emitter installed on the lower plate; a diffusing plate and a support frame. The support frame includes the main frame element enveloping the outer side surface of the casing; an element providing a support for the casing, which projects from the inner side surface of the main frame element and serves as a support for the casing weight; and a part for attachment to a ceiling, which projects from the outer side surface of the main frame element and is attached to the ceiling.
EFFECT: improving reliable attachment and simplifying the design.
10 cl, 45 dwg