Method of making static random access memory and static random access memory (ram)

FIELD: physics, computer engineering.

SUBSTANCE: invention relates to computer engineering. A method of making static random access memory includes arranging data bit storage units and data read buses and data write buses in space, wherein a memory cell is structurally divided into three types of modules: a data bit storage module, a write port module and a read port module, wherein the write port module is arranged separately from the storage module and connected to the input of the data bit storage module, and the read port module is arranged separately from the storage module and connected to the output of the storage module.

EFFECT: improving noise-immunity of the RAM by reducing the capacitance of parasitic capacitors between components of the device.

3 cl, 3 dwg

 



 

Same patents:

FIELD: physics, computer engineering.

SUBSTANCE: invention relates to computer engineering. The information rewriting device comprises a first storage unit provided in a battery, storing first information with possibility of rewriting; a second storage unit provided in a battery charger which charges the battery by being electrically connected to the battery detachably therefrom, the second storage unit storing second information with possibility of rewriting; at least one rewrite unit provided in at least one of the battery and the battery charger, the at least one rewrite unit rewriting either the first information stored in the first storage unit or the second information stored in the second storage unit based on the other information out of the first information and the second information when the battery and the battery charger are electrically connected; and a protocol changing unit which changes a data transmission protocol between the battery and the battery charger from a first protocol to a second protocol when the at least one rewrite unit rewrites the either information.

EFFECT: easier rewriting of information stored in a battery or a battery charger.

13 cl, 8 dwg

FIELD: information technologies.

SUBSTANCE: removable medium comprises two modules connected to each other and equipped with a slot. One of modules comprises a contact group, and the other one - a flash memory chip. The medium is made as disposable and breaks when withdrawn, as a result of the fact that modules are connected to each other by means of a common outer circuit, which is made as flexible, at the same time the outer circuit connects the modules at one side.

EFFECT: provision of impossibility to reproduce information from a removable medium outside a system of distributed devices equipped with an appropriate slot, impossibility of repeated reproduction of information.

3 cl, 5 dwg

FIELD: information technology.

SUBSTANCE: dual voltage semiconductor memory device having a plurality of write drivers receiving low voltage data input signals; a plurality of bit lines connected to the plurality of write drivers, wherein the plurality of write drivers is configured to write low voltage data input signals in the plurality of bit lines in response to reception of low voltage data input signals; a timing tracking circuit configured to delay a high voltage number line signal in accordance with the time associated with the plurality of write drivers which write low voltage data input signals; and a plurality of memory cells which react to the high voltage number line signal and the plurality of write drivers writing the low voltage data input signals.

EFFECT: reduced power consumption.

30 cl, 6 dwg

FIELD: information technologies.

SUBSTANCE: storage device comprising many interface ports; multiple drivers of discharge busbars; multiple discharge busbars corresponding to multiple drives of discharge busbars; at least two submatrices. Each of the specified at least two submatrices comprises a copy from multiple discharge busbars of the specified storage device and a part from multiple numerical busbars of the specified storage device; a decoder connected with the specified at least two submatrices and the specified multitude input/output ports. The specified decoder is arranged as capable of controlling the specified multitude of numerical busbars; and multiple multiplexers corresponding to multiple discharge busbars; at the same time each multiplexer functions to connect with its appropriate discharge busbar only one copy from its appropriate discharge busbar on the basis of an address of a storage device cell received in one or more of the specified multitude of interface ports.

EFFECT: reduced consumption of dynamic power.

10 cl, 7 dwg

FIELD: information technologies.

SUBSTANCE: data storage device, comprising the following components: a memory layout configured for data storage; a substantially flat card comprising the first part, one or more additional parts, and a guide element, which marks a border between the first part and at least one of the specified one or more additional parts, and the specified memory layout; and an electric interface, which is electrically connected with a memory layout and arranged on the first face surface of the first part of the card; at the same time the card is made so that if the first part is arranged along the guide element in respect to at least one of additional parts so that one or more parts are directly under the electric interface, and the first part and one or more additional parts are parallel to each other, then the total thickness of the first part and one or more additional parts is sufficient to enter in contact both with the electric interface of a standard socket for telecommunications and with the body of this socket, when the folded card is inserted into a standard socket for telecommunications.

EFFECT: efficiency of device usage as a result of its ergonomics.

20 cl, 23 dwg

FIELD: information technology.

SUBSTANCE: bit cells include a source line formed in a first plane and a bit line formed in a second plane. The bit line has a longitudinal axis which is parallel to a longitudinal axis of the source line, and the source line overlaps at least a portion of the bit line.

EFFECT: reducing the area of the semiconductor substrate occupied by an STT-MRAM cell.

23 cl, 10 dwg

FIELD: information technology.

SUBSTANCE: receiving unit forms a housing and a receiving unit, the housing being detachable and the receiving unit having a rigid frame from which is suspended an assembly of an "П"-frame structure and a printed circuit board with a contact device. The rigid frame consists of a base with end supports, side panels and a front panel, all joined together. Under the inlet opening of the front panel there is a button with a spring-loaded pusher, the end plane of which slants and rests on the shelf of the "П"-frame structure depending on the angular position of its top and bottom part. Stability of the "П"-frame structure in the outermost positions (angular and horizontal) provide fixation mechanisms formed by a system of a spring-loaded P-shaped lever, a holder and a tension-compression spring, lying in corresponding grooves of each of the side panels.

EFFECT: improved manufacturability of the structure, which reduces requirements for accuracy of making elements of the structure and assembly thereof.

2 cl, 3 dwg

FIELD: physics, computer engineering.

SUBSTANCE: invention relates to computer engineering and can be used in designing parallel computer systems. The technical result is achieved due to that in an s×m rectangular matrix of readings, where: s is the number of rows, m is the number of columns, where s*m equals 2P, m equals 2q, and p and q are integers and q is greater than or equal to 1, and p is greater than q, for all columns of the rectangular matrix of readings in the same row, are placed in columns with cyclic shift relative rectangular arrangement to the right (left) by Sh positions: , where: n=[p-q+1]/q-1; si is the coefficient of the number of rows sn, given in the form sn=snmn+…+s2m2+s1m1+s0m0.

EFFECT: possibility of simultaneous access to fast Fourier transformation readings saved in memory using traditional methods.

FIELD: information technology; gambling.

SUBSTANCE: central controller contains control unit, which, in turn, contains processor unit, storage device and software. At that the control unit is programmed to receive first signal, defining the location of gambling device, transmitted by one of the transmitters; to receive second signal, defining the location of gambling device, transmitted by another transmitter; to determine the gambling device location considering the two signals, as well as to determine transmitters' location; to determine bearing angles of the transmitters relative to the receiver considering the two signals received and bearing angle determination angle, and, finally, to determine the gambling device location considering transmitters' bearing angles relative to receiver, as well as transmitters' location. Controller operation is described by versions of methods for determination of gambling device location in a casino.

EFFECT: capability to determine gambling device location in a casino automatically, while retaining standard mode of gambling device operation.

10 cl, 31 dwg

FIELD: technological processes.

SUBSTANCE: module of semi-conducting memory and receiving unit of device of record-readout for it are related to structural elements of digital memorising devices and may be used in computer input blocks. Memory module is made with the shutter, which protects contact sites on the basis of frame. Shutter is installed in the bore of frame basis and has two end thrusts that interact with springs in slots of frame walls. Receiving unit of device of record-readout for such module consists of three main elements: frame with thrusts, spring-loaded slider and module holder. Slider has inclined slots on its side walls, with which the holder latches interact, lowering the holder with module on contact group of record-readout device. Position of slider is fixed by its thrust engagement with radial shoulder of lever, which is installed in the frame basis. Slider movement is limited by slots in its basis, which interact with frame basis thrusts. Memory module shutter is opened with end thrusts of holder when pressing the shutter projections, which interact with its springs. Latches-limiters of holder are installed in vertical slots of frame walls and provide only vertical movement of holder, and thrusts in frame basis at interaction with slots in holder guides fix it in lower position.

EFFECT: increase of reliability with simultaneous simplification of devices.

2 cl, 7 dwg

FIELD: physics, computer engineering.

SUBSTANCE: magnetic random access memory (MRAM) cell comprises a magnetic tunnel junction comprising a tunnel barrier layer between a first magnetic layer having a first magnetisation direction, and a second magnetic layer having a second magnetisation direction being adjustable from a first direction to a second direction so as to vary junction resistance of the magnetic tunnel junction from a first to a second junction resistance level. Said magnetic tunnel junction further comprises a resistive switching element electrically connected to the magnetic tunnel junction and having a switching resistance which can be switched from a first to a second switching resistance level when a switching current passes through the resistive switching element. The MRAM cell resistance can have at least four different cell resistance levels depending on the resistance level of the junction resistance and the switching resistance. The tunnel barrier layer consists of a resistive switching element.

EFFECT: improved readability for a MRAM cell.

13 cl, 6 dwg, 3 ex

FIELD: physics.

SUBSTANCE: invention relates to microelectronics. An element library based on complementary metal-oxide-semiconductor (MOS) transistors, comprising a p-type substrate and an n-type pocket, n- and p-type MOS transistor active regions, p+ and n+ contacts for the zero potential and supply bus, further includes an extended n+ protection located along the outer boundary of the pocket and which fills the entire free area of the pocket, as well as an annular p+ protection around each of the n-type transistor groups with drain/gate regions of transistors with different potential, which fills the entire free area of the substrate.

EFFECT: creating a radiation-resistant element library based on complementary metal-oxide-semiconductor transistors with a smaller area of elements on the chip and faster operation.

5 dwg

FIELD: information technology.

SUBSTANCE: read signal is applied to a bit line connected to a memory array including a plurality of memory cells, each of the plurality of memory cells having a magnetic tunnel junction (MTJ) device; positive voltage is applied to a selected word line connected to a selected memory cell of the memory array; negative voltage is applied to unselected word lines connected to the memory array; and the negative voltage is applied to each word line during a standby state.

EFFECT: reduced stray current in magnetic random access memory.

25 cl, 7 dwg

FIELD: information technologies.

SUBSTANCE: nonlinear memory cell represents arbitrary geometrically shaped set of arbitrary number of memory elements of arbitrary type which are connected by data bus lines in arbitrary order. The memory elements may be distributed over arbitrary surface or in arbitrary volume.

EFFECT: increase in data processing rate.

1 dwg

FIELD: information technology, physics.

SUBSTANCE: Boolean logic function is constructed when recording the memorising information in the accomplished normal disjunctive form. The argument of this form is the address of memorised information and its value is the memorised information. After that the Boolean logic function gets converted into Zhegalkin polynomial, then the number of elementary Boolean operations, being a part of Zhegalkin polynomial, gets minimised, and then the minimised Zhegalkin polynomial gets realised on the programmed integrated circuit logic.

EFFECT: decrease of general-circuit expenditures for memorising the digital information.

2 tbl

FIELD: electric engineering, possible use in new generation of computers, informational communication systems, intelligent sensors, bio-passports, control systems.

SUBSTANCE: memory element based on planar Hall effect is made on a substrate, on which positioned serially are dielectric layer, recording ferromagnetic film, consisting of first protective layer, ferromagnetic nanostructure with light magnetization axis, directed along the length of film and second protective layer, first isolating layer, record conductor, second isolating layer, and contains a reading cross-shaped magnetic structure based on planar Hall effect on dielectric layer, which structure consists of third protective layer, magnetic nanostructure and fourth protective layer, and also of third isolating layer, positioned on record conductor, fourth isolating layer, positioned above record conductor, on top of which the reading conductor is positioned, mounted above the cross-shaped reading structure based on planar Hall effect and along recording ferromagnetic film.

EFFECT: reduced error of measurements, increased trustworthiness of accumulation and processing of information.

2 dwg

FIELD: technology for recording data, linked with other data.

SUBSTANCE: data production device has module for assigning numeric value, meant for assigning from number of multiple numeric values, stored on data carrier, of numeric value, appropriate for data file, subject for extraction, while numeric value is additional basic n value, where n - integer value higher than one. Device also has module for forming path name, meant for forming name by insertion of symbol, appropriate for numeric value, into each preset position in given formed symbols string, and receiving module, meant for extraction of data file, if in data carrier additional file is present with path name, formed by path name forming module.

EFFECT: decreased data-occupied space in memory.

4 cl, 12 dwg

The memory cell // 2224356
The invention relates to the field of pulse technique and can be used in devices of computer engineering and control systems

The memory cell // 2222100
The invention relates to the field of pulse technique and can be used in devices of computer engineering and control systems

The invention relates to programmable memory elements, to a method and device for reading, writing, and programming

FIELD: technology for recording data, linked with other data.

SUBSTANCE: data production device has module for assigning numeric value, meant for assigning from number of multiple numeric values, stored on data carrier, of numeric value, appropriate for data file, subject for extraction, while numeric value is additional basic n value, where n - integer value higher than one. Device also has module for forming path name, meant for forming name by insertion of symbol, appropriate for numeric value, into each preset position in given formed symbols string, and receiving module, meant for extraction of data file, if in data carrier additional file is present with path name, formed by path name forming module.

EFFECT: decreased data-occupied space in memory.

4 cl, 12 dwg

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