P-type oxide, producing p-type oxide composition, method of producing p-type oxide, semiconductor device, display device, image reproducing apparatus and system

FIELD: chemistry.

SUBSTANCE: invention relates to a p-type oxide, a p-type oxide composition, a method of producing a p-type oxide, a semiconductor device, an image reproducing apparatus and a system. The p-type oxide is an amorphous compound and has the following compositional formula: xAO∙yCu2O, where x denotes the molar fraction of AO and y denotes the molar fraction of Cu2O, x and y satisfy the following conditions: 0≤x<100 and x+y=100 and A is anyone of Mg, Ca, Sr and Ba or a mixture containing at least two elements selected from a group consisting of Mg, Ca, Sr and Ba.

EFFECT: p-type oxide is produced at a relatively low temperature and in real conditions and can exhibit excellent properties, ie sufficient specific conductivity.

11 cl, 36 dwg, 8 tbl, 52 ex

 

AREA of TECHNOLOGY

The present invention relates to oxide p-type, oxide composition of the p-type, the method of producing oxide p-type, semiconductor device, apparatus and reproduction system. In addition, the present invention is in particular the case of the oxide of the p-type showing specific conductance of the p-type, the production of the composition for obtaining the oxide is p-type, method of producing the oxide is p-type, semiconductor device using an oxide of the p-type active layer of a display device, comprising a semiconductor device, instrument playback image using the display device, and systems including equipment for playback.

The LEVEL of TECHNOLOGY

The development of InGaZnO4(IGZO) thin-film transistors (TFT) which are in the amorphous state have a higher mobility than Si, contributed to the acceleration of scientific-research works on obtaining of oxide semiconductors in the whole world. However, almost all of these oxide semiconductors oxide were n-type semiconductors, in which electrons serve as carriers.

If the oxide semiconductor is p-type, the properties of which are comparable with the same properties as the oxide semiconductor n-type, it becomes available, a possible Association OK�LiDE semiconductor p-type oxide with n-type semiconductor for the formation of p-n compounds, which leads, for example, the diode, optical sensor, photocell, LED and bipolar transistor.

Oxide semiconductor can be converted into a semiconductor with a wide forbidden energy zone, which allows the device including the semiconductor, to be transparent.

In an active matrix organic EL display, a main drive circuit is 2T1C circuit, as shown in Fig. 7. In this case, the control transistor (field-effect transistor (20), which is an n-type transistor, leads to the so-called stock connect repeater. Thus, associated with time change (especially increased tension) properties of the organic EL device, causes the operating mode, the control transistor, to switch to another operating mode with different gate voltage, which reduces the period of the expected life of the display. This is the reason why AM-OLED (active matrix organic EL display) could not yet be almost real, as used IGZO TFT, which had a high mobility as a backplane, and now exclusively uses a LTPS-TFT of the p-type (low temperature polysilicic thin film transistor). As a result, high-performance oxide semiconductor p-type continues to be very desirable.

Was�known, since 1950, the crystal of Cu2O shows the specific conductance of the p-type (see, for example, NPL 1). This crystal is based on O-Cu-O dumbbell structure, and the structure of the hybrid orbitals of Cu 3d and O 2p are at the top of the valence region. Excess oxygen over-stoichiometry leads to the hole in the valence of a preceding field, which leads to the conductivity of the p-type.

Examples of crystals based on the dumbbell structure include the delafossite crystal, represented by the following formula: CuMO2(where M = Al, Ga or In) and crystal SrCu2O2. Their oxides should have a high degree of crystallinity in order to show the specific conductance of the p-type. For example, CuAlO2, CuInO2and SrCu2O2,reportedly, actually show the specific conductance of the p-type (see, for example, NPL 2 to 4).

One of the reasons why it is difficult to show the specific conductance of the p-type, is that the valence of Cu and the amount of oxygen cannot easily manage. Crystalline phase containing Cu2+,for example CuO, SrCuO2and SrCu2O3often becomes polluted when you attempt the formation of a single phase film consisting of an oxide containing Cu+thathas excellent crystallinity. Such contaminated p�assessment can not show excellent electrical conductivity of the p-type and its properties cannot be managed easily. This means that properties such as carrier concentration and the carrier mobility cannot be optimized when these oxide materials of the p-type are used for the active layer in the semiconductor device.

In addition, delafosse was proposed, containing the monovalent oxide of Cu or Ag (see PTL 1). However, the above technology requires heat treatment at high temperature of 500°C or more, which is not appropriate.

Was offered a thin film with a conductivity of p-type containing crystalline SrCu2O2(see PTL 2). In the above proposed technology thin film can be formed at a relatively low temperature of 300°C. However, the thin film may show specific conductivity only to 4.8×10-2S-1that is inadequate. Moreover conductivity cannot properly manage.

Thus, the proposed above-mentioned technologies are also not able to really obtain the oxide is p-type and also not able to produce R-okienko material, allowing appropriate management of electrical conductivity and showing sufficient electrical conductivity.

Was offered a TFT using an active layer of an oxide of the material of the p-type, which�th has the crystal structure of delafossite, containing monovalent Cu or Ag (see PTL 3).

However, the proposed above-mentioned technology had not disclosed adequate information regarding, for example, material properties of the active layer, method of producing the active layer and the properties of the transistor.

Also proposed a TFT using an active layer of crystalline Cu2O (see NPL 5 and 6). However, the above technology could not reach the level of actually usable relative to, for example, electron drift mobility ratio and levels (current or voltage) in the States on / off the TFT, because the properties of the active layer can not sufficiently be controlled.

That is, the above technology is not able to easily control various properties such as carrier concentration of the oxide material of the p-type and do not provide suitable properties for use in the device.

In conclusion: neither practical nor useful oxide material of the p-type has not been found.

Accordingly, the need still exists to ensure that: the oxide is p-type, the properties of which are comparable to similar properties of the oxides are n-type; an oxide of the p-type manufacturing the composition for the oxide is p-type; a method of producing oxide p-type; a semiconductor device, and�using the oxide of the p-type active layer; display device comprising a semiconductor element; apparatus for the reproduction of the image using the display, and a system including the apparatus display the image.

List of links

Patent literature

PTL 1: Japanese Patent Application Laid pen (JP-A) No.. 11-278834

PTL 2: JP-A No. 2000-150861

PTL 3: JP-A No. 2005-183984

Non-patent literature

NPL 1: J. Bloem, a Discussion of some optical and electrical properties of Cu2O, Philips Research Reports, VOL. 13, 1958, pp. 167-193

NPL 2: H. Kawazoe, et al., The electrical conductivity of p-type transparent thin films CuAlO2, Nature, VOL. 389, 1997, pp. 939-942

NPL 3: H. Yanagi, et al., Bipolarity in the conductivity of transparent semiconducting oxides CuInO2with the delafossite structure, Applied Physics Letters, VOL. 78, 2001, pp. 1583-1585

NPL 4: A. Kudo, three others, SrCu2O2: Conductive oxide p-type wide gap, Applied Physics Letters, VOL. 73, 1998, pp. 220-222

NPL 5: E. Fortunato, eight others, Thin-layer transistors based on thin films of Cu2O p-type, obtained at room temperature, Applied Physics Letters, VOL. 96, 2010, pp. 192102

NPL 6: K. Matsuzaki, five others, Epitaxial growth of thin films of Cu2O high mobility and use in p-channel thin film transistor. Applied Physics Letters, VOL. 93, 2008, pp. 202107.

Summary of the INVENTION

Technical problem

The present invention is directed to solving the above-mentioned existing about�LEM and achieving subsequent goals of the study. In particular, the aim of the present invention is to provide: a new oxide p-type produced at a relatively low temperature and in the real world, and able to demonstrate excellent properties, i.e., sufficient electrical conductivity; management of specific electrical conductivity by adjusting the compositional ratio; oxide p-type production of the composition for obtaining the oxide is p-type; the method of producing oxide p-type; a semiconductor device using the oxide of the p-type active layer; a display device having a semiconductor element; apparatus for the reproduction of the image using the display device; and system, includes hardware for playback.

The solution to the problem

Means for solving the above-mentioned existing problems are as follows.

<1> the Oxide is p-type,

where the oxide is p-type is amorphous and is represented by the following compositional formula: xAO·yCu2O, where x denotes the mole fraction AO, y denotes the mole fraction of Cu2O, x and y satisfy the following conditions: 0≤x < 100 and x+y=100, and A is any one of Mg, Ca, Sr and Ba or mixtures containing at least one element selected from the group consisting of Mg, Ca, Sr and Ba.

<2> Composition for the production of oxide p-type, including:

solvent;

Cu-containing compound; and

compound containing at least one element selected from the group consisting of Mg, Ca, Sr and Ba,

where the industrial composition of the oxide of the p-type may be used to obtain oxide p-type in accordance with <1>.

<3> a Method of producing oxide of the p-type in accordance with <1> includes:

the application of the composition to a substrate; and

heat treatment of the composition after application,

where the composition includes a solvent, a Cu-containing compound, and a compound containing at least one element selected from the group consisting of Mg, Ca, Sr and Ba.

<4> a Semiconductor device, including:

the active layer,

where the active layer includes an oxide of the p-type in accordance with <1>.

<5> a Semiconductor device in accordance with <4> further comprising:

the first electrode; and

the second electrode,

where the semiconductor device is a diode in which the active layer is formed between the first electrode and the second electrode.

<6> a Semiconductor device in accordance with <4> further comprising:

a gate electrode formed to application of gate voltage;

the source electrode and the drain electrode, which are formed to extract electric current; and

insulating layer shutter,

where semiconductor�e device is the field-effect transistor, in which the active layer is formed between the source electrode and the drain electrode, and an insulating layer stopper is formed between the gate electrode and the active layer.

<7> a display Device, including:

the light adjusting device is formed to control the light output based on the control signal; and

a control circuit containing a semiconductor device in accordance with <4> and formed to control the light regulating device.

<8> a display Device in accordance with <7>, where the light adjusting device includes an organic electroluminescent device or an electrochromic device.

<9> a display Device in accordance with <7>, where the light control device includes a liquid crystal device, an electrophoretic device, or electromotively (based on the technology of electromachine) device.

<10> the Instrument of reproduction, including:

many display devices in accordance with <7>, which are arranged in a matrix form and each includes a field effect transistor;

lots of wiring diagrams that are generated for individual application of gate voltage, and the voltage signal to field effect transistors of the display devices; and

managing AMS�temperature display, formed to individually control the gate voltage and the signal voltage in field effect transistors using the wiring diagram on the basis of the image data,

where the apparatus of the playback image is formed, to reproduce the image based on the image data.

<11> the System, including:

instrument display the image in accordance with <10>; and

apparatus generating image data generated to create the image data based on image information to reproduce and output the video information on the screen of the equipment for playback.

The PREFERRED embodiment of the PRESENT INVENTION

The present invention can solve the aforementioned problems and to provide: a new oxide p-type, able to show excellent property, i.e., sufficient electrical conductivity produced at a relatively low temperature and in the real world, allowing to control the conductivity by adjusting the compositional ratio; industrial composition of the oxide of the p-type to obtain the oxide is p-type; a method of producing oxide p-type; a semiconductor device using the oxide of the p-type active layer; a display device that includes a semiconductor mouth�eusto, equipment playback image using the display device; and a system including the apparatus display the image.

BRIEF description of the DRAWINGS

Figure 1 shows a schematic structural view of one exemplary diode.

Figure 2 shows a schematic structural view of one exemplary field-effect transistor top contact/bottom gate.

Figure 3 presents a schematic structural view of one exemplary field-effect transistor of the bottom contact/bottom gate.

Figure 4 shows a schematic structural view of one exemplary field-effect transistor top contact/top gate.

Figure 5 presents a schematic structural view of one exemplary field-effect transistor of the bottom contact/top gate.

Figure 6 shows an explanatory view of the apparatus of the playback image on the screen.

Figure 7 shows an explanatory view of one of the display device of the present invention.

Figure 8 is a schematic structural view of one exemplary relative position between the organic EL device and the field-effect transistor in the display device, where the arrow indicates the direction in which light is emitted.

Figure 9 is a schematic structural view of another example�tion of the relative position between the organic EL device and the field-effect transistor in the display device, where the arrow indicates the direction in which light is emitted.

Figure 10 is a schematic structural view of one exemplary organic EL device, where the arrow indicates the direction in which light is emitted.

Figure 11 shows an explanatory view of control equipment, the playback device.

Figure 12 shows an explanatory view of a liquid crystal display, where Y0 ... Ym-1 are the data lines, and X0 ...Xn-1 are the scanning lines.

Figure 13 shows an explanatory view showing the device of figure 12.

Figure 14 illustrates the result of x-ray diffraction analysis of the oxide of the p-type according to example 1.

Figure 15 illustrates the result of x-ray diffraction analysis of the oxide of the p-type according to example 3.

Figure 16 illustrates the result of x-ray diffraction analysis of the oxide of the p-type according to example 7.

Figure 17 illustrates the result of x-ray diffraction analysis of the oxide of the p-type according to example 9.

Figure 18 illustrates the result of x-ray diffraction analysis of the oxide of the p-type according to example 12.

Figure 19 illustrates the result of x-ray diffraction analysis of the oxide of the p-type according to example 14.

Figure 20 illustrates the result of x-ray diffraction analysis of the oxide of the p-type according to example 15.

Figure 21 illustrates the result of x-ray diffraction analysis of the oxide of the p-type according to example 18.

Figure 22 illustrates the result of x-ray diffraction analysis of the oxide of the p-type according to example 24.

Figure 23 illustrates the result of x-ray diffraction analysis of the oxide of the p-type according to example 27.

Figure 24 illustrates the result of x-ray diffraction analysis of the oxide of the p-type according to example 30.

Figure 25 illustrates the result of x-ray diffraction analysis of the oxide of the p-type according to example 32.

Figure 26 illustrates the result of x-ray diffraction analysis of the oxide of the p-type according to example 35.

Figure 27 illustrates the result of x-ray diffraction analysis of the oxide of the p-type according to example 38.

Figure 28 illustrates the result of x-ray diffraction analysis of the oxide of the p-type according to example 40.

Figure 29 illustrates the result of x-ray diffraction analysis of the oxide of the p-type according to example 43.

Figure 30 illustrates the result of x-ray diffraction analysis of the oxide of the p-type according to example 45.

Figure 31 illustrates the volume resistivity of the oxides of p-type (xMgO·yCu2O) according to the examples 1 to 11.

Figure 32 illustrates the volume resistivity of the oxides of p-type (xMgO·yCu2O) according to examples 12 to 22.

On f�góra 33 illustrates the volume resistivity of the oxides of p-type (xMgO·yCu 2O) according to examples 23 to 34.

Figure 34 illustrates the volume resistivity of the oxides of p-type (xMgO·yCu2O) according to examples 35 to 44.

Figure 35 illustrates the TV characteristics of the diode obtained in example 50.

Figure 36 presents the micrograph of part of the channel of a field effect transistor obtained in example 52.

DESCRIPTION of embodiments of

(The oxide is p-type, manufacturing, the composition of the oxide is p-type and a method of producing oxide p-type)

<Oxide p-type>

Oxide p-type present invention is amorphous and is represented by the compositional formula: xAO·yCu2O in which x denotes the mole fraction of AO and y denotes a ratio of moles of Cu2O and satisfy the following condition : 0≤x < 100 and x+y=100, A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least one element selected from the group consisting of Mg, Ca, Sr and Ba.

Oxide p-type can show the specific conductance of the p-type, where holes are the media, despite the amorphous oxide p-type. In addition, the oxide of the p-type can be obtained with suitable properties depending on the task by continuously changing its composition ratio (x, y), allowing to operate in a wide range of specific electrical conductivity of the oxide, due to its amorphous structure.

Tr�traditionally was considered, what do oxides of monovalent Cu (or Ag) valence area, consisting of hybrid orbitals of Cu 3d and O 2p, has a strong orbital anisotropy and, thus, the oxide must be crystalline in order to show the specific conductance of the p-type. In this sense, the oxide semiconductor n-type is very different from the above-mentioned oxides of monovalent Cu (or Ag), because the conduction band of metal oxide with a high specific weight of the n-type consists of isotropic s-orbitals. However, the authors present invention have found that the Cu oxide may have a specific electrical conductivity of the p-type, despite the amorphous oxide. In the composition only SrCu2O2and BaCu2O2presented in the form of the crystalline phase. Conductivity of these crystals is difficult to manage.

Thus, the oxide of the p-type present invention can widely vary in composition, which is different from the oxide of the p-type, containing crystals of Cu. In particular, it is advantageous that the density of state d-p hybrid level and conductivity can be controlled over a wide range, because the chemical variety and amount A (Mg, CA, Sr and/or BA), which is a counterion Cu, you can freely choose.

In addition, conventional Cu-containing oxides, the p-type are crystalline, while the oxide rtype of the present invention is amorphous. Therefore, the oxide of the p-type present invention has the advantage that the variability in properties due to the unequal crystallinity will not occur, in accordance with which, a uniform film of the present invention can be obtained.

It should be noted that the oxide is p-type consists mainly of an amorphous oxide, represented by the following compositional formula: Hao·yC2O, in which x denotes the proportion of moles of AO and y denotes the mole fraction of Cu2O and satisfies the following conditions: 0≤x < 100 and x+y=100, only a small number of small crystalline particles may be present in the oxide is p-type, provided that they will not have almost any influence on

semiconductor properties. The phrase "only a small quantity" means the quantity does not lead to the percolation of fine crystalline particles comprising about 15% by volume or less.

A - includes Mg, Ca, Sr and/or Ba. That is, A - may be any one of Mg, Ca, Sr and Ba, or a mixture of any two or four from Mg, Ca, Sr and Ba.

A - in oxide p-type may be doped, for example, Rb or Cs.

The electrical properties of oxide p-type depend on the chemical species A and A molar ratio to Cu (i.e., the x and y values). Oxide film of the present invention can be applied in various semiconductor devices, but properties�about, which are required for semiconductor devices (i.e., resistivity) usually varies depending on the type and properties of the semiconductor device. Accordingly, A chemical compound and a molar ratio to Cu (i.e., the x and y values) can be suitably selected depending on the intended purpose, however, when the volume resistivity of the oxide film is more than 108Ωc, ohmic contact cannot easily be formed for connection with the electrode, which may not actually be appropriate in some cases. For volume resistivity was 108Ω or less, in the case where the compositional formula: xAO·yCu2O is xMgO·yCu2O, x should be preferably less than 80. In the case where the compositional formula: xAO·yCu2O is xCaO·yCu2O, x should be preferably less than 85. In the case where the compositional formula: xAO·yCu2O is xSrO·yCu2O, x should be preferably less than 85. In the case where the compositional formula: xAO·yCu2O is xBaO·yCu2O, x should preferably have less than 75.

The form of the oxide of the p-type is not particularly limited and may accordingly be selected depending on the intended purpose. For example, the oxide of the p-type may �be in the form of a film or grains (particles).

Oxide p-type suitable as the active layer of the p-type semiconductor device, such as a diode p-n junction, a PIN photodiode, a field effect transistor, light emitting device and a photoelectric Converter.

A method of producing oxide of the p-type is preferably a method of producing oxide of the p-type present invention using oxide production of the composition of the p-type present invention described below.

Other ways of obtaining oxide of the p-type is not particularly limited and can accordingly be selected depending on the intended purpose. Their examples include: a sputtering method, a method of pulsed laser deposition (PLD), CVD method and ALD method.

<PRODUCTION COMPOSITION of the OXIDE P-TYPE>

Production and composition of oxide of the p-type contains at least a solvent, a Cu-containing compound and a compound containing Mg, Ca, Sr and/or Ba; and if necessary may further contain other components.

Oxide p-type production composition is a composition used to obtain the oxide of the p-type present invention.

"Solvent"

The solvent is not particularly limited and may be appropriately selected depending on the intended purpose. His examples include toluene, xylene, 2-ethylhexanoyl acid, acetylacetone, etrangle�l and 2-methoxyethanol.

Solvents such as diethylene glycol and dimethylformamide, can be used to impart desired properties such as viscoelasticity and dielectric properties of oxide p-type production of the composition.

Solvents may be used alone or in combination.

The amount of solvent present in the oxide of the p-type production of the composition is not particularly limited and may be appropriately selected depending on the intended purpose.

"Cu-containing compound"

The copper in the oxide of the p-type is monovalent, but Cu in Cu-containing compound is not limited in this. Compound containing copper, may be selected depending on the intended purpose. Examples of such compounds include: organic copper carboxylates such as copper (II) neodecanoate; organic copper complexes such as copper (II) phthalocyanine and copper (I) phenylacetylene; alkoxides of copper such as copper (II) detoxed; and inorganic copper salts such as copper(II) sulfate and copper (I) acetate.

Among them, in the case where the oxide of the p-type manufacturing compositions prepared in non-polar solvents, organic carboxylates of copper are preferred, and copper (II) neodecanoate more preferable in terms of stability. In the case where the p-type oxide manufacturing compositions prepared in polar races�varicela, preferred inorganic salts of copper, and sulphate of copper (II) is more preferable in terms of solubility.

The number of Cu-containing compound contained in the oxide of the p-type production of the composition, is not particularly limited and may accordingly be selected depending on the intended purpose.

"The compound containing Mg, Ca, Sr and/or Ba"

The compound containing Mg, Ca, Sr and/or Ba, is not particularly limited and may be selected depending on the intended purpose.

Their examples include carboxylates, organic complexes of metals, alkoxides of metals and inorganic salts containing Mg, Ca, Sr and/or Ba.

Among them, in the case where oxide production composition of the p-type is obtained in nonpolar solvent, the preferred organic carboxylates; magnesium 2-ethylhexanoate, calcium 2-ethylhexanoate, strontium 2-ethylhexanoate, and barium 2-ethylhexanoate is preferred from the viewpoint of solubility. In the case where the p-type oxide manufacturing compositions prepared in polar solvents, the preferred inorganic salts; magnesium nitrate, calcium nitrate, strontium chloride, and barium chloride is preferable from the viewpoint of solubility.

Oxide p-type manufacturing the composition of the present invention is suitable as the initial solution used for�teachings oxide p-type, which has excellent conductivity. It is characterized by the fact that Cu in the oxide of the p-type monovalent, but Cu in Cu-containing compound included in oxybu industrial composition of the p-type, this is not limited and is preferably divalent. When Cu in Cu-containing divalent connecting, the Cu oxide in the p-type production of the composition is also divalent, therefore, the ratio of the number of Cu atoms to the number of oxygen atoms in the p-type oxide production of the composition is 1:1. However, Cu in oxide p-type (xAO·yCu2O) obtained from these components is monovalent, so the ratio of the number of Cu atoms to the number of oxygen atoms is 2:1 in the oxide is p-type. Oxide p-type production composition has an excess amount of the oxygen atoms relative to the Cu atoms in the production of oxide p-type. Such oxide p-type manufacturing the composition results in oxide p-type, which had a large amount of oxygen to thereby suppress the compensation of carriers due to oxygen defects. Therefore, it may be obtained oxide p-type high hole concentration, which has an excellent p-type conductivity.

In oxide p-type production of the composition the composition of the metal elements and the ratio of solvent�th in the mixture can vary widely and, consequently, it is thus possible to regulate them depending on the method of producing oxide of the p-type and intended use, as described below.

"Method of producing oxide p-type"

A method of producing oxide of the p-type present invention includes at least the stage of application and the stage of heat treatment, and, as necessary, further includes other steps.

"The stage of applying"

Stage of application is not particularly limited and may accordingly be selected depending on the intended purpose, provided that it represents a stage of applying a composition to the substrate.

The composition of an oxide of the p-type industrial composition of the present invention.

The substrate is not particularly limited and may accordingly be selected depending on the intended purpose. An example thereof includes a glass substrate.

The method of applying the composition is not particularly limited and can accordingly be selected depending on the intended purpose. For example, you can apply existing methods such as the method of coating by centrifugation, the inkjet method, slit coating method, a coating method using the print nozzles, intaglio printing and micro-contact printing method. Among them, the coating method of the centrifuge�lo g is preferable in the case when a film having a uniform thickness is required can easily be obtained on a large area. The use of appropriate printing conditions and printing methods such as an inkjet method and micro-contact printing method, allow you to choose the composition for printing in the desired shape without requiring a subsequent stage structuring.

"Stage heat treatment"

Stage heat treatment is not particularly limited and may be selected depending on the intended purpose, provided that the stage of the heat treatment is carried out after the stage of application, thereby facilitating the drying of the solvent contained in the composition, the decomposition of the Cu-containing compound, decomposition of compounds containing Mg, Ca, Sr and/or Ba, and obtaining oxide p-type.

In the stage of heat treatment drying of the solvent contained in the composition (hereinafter may be referred to as the "stage of drying"), preferably performed at a different temperature from the decomposition of Cu-containing compounds from the decomposition of the compound containing Mg, Ca, Sr and/or Ba, and from the receipt of the oxide of the p-type (hereinafter may be referred to as a "state of decomposition and receiving"). Thus, it is preferable that the temperature after drying of the solvent was increased, and then decomposed Cu-containing compound, a decomposed compound contained�ASEE Mg, Ca, Sr and/or Ba, and received the oxide is p-type.

The temperature of the drying step is not particularly limited and may accordingly be selected depending on the content of the solvent. It is, for example, from 80°C to 180°C. Can be effectively applied vacuum furnace to reduce the temperature of the drying step.

The period of the drying step is not particularly limited and can accordingly be selected depending on the intended purpose. It is, for example, from 10 minutes to 1 hour.

The temperature of the stage of decomposition and the receipt is not particularly limited and may accordingly be selected depending on the intended purpose. It is, for example, from 200°C to 400°C.

Period stage of decomposition and the receipt is not particularly limited and can accordingly be selected depending on the intended purpose. It is, for example, from 1 hour to 5 hours.

In the stage of heat treatment stage of decomposition and receiving may be performed simultaneously or may be divided into several stages.

Method for stage heat treatment is not particularly limited and can accordingly be selected depending on the intended purpose. For example, the substrate may be heated.

Atmosphere where the stage of heat treatment is not particularly limited and may be appropriately selected depending on the intended purpose, but preferred�Stateline this oxygen atmosphere. Carrying out heat treatment in the oxygen atmosphere enables quick removal of the product of decomposition from the system and allows to reduce the number of defects in the resulting oxide is p-type.

At the stage of heat treatment composition which has been dried, exposed to ultraviolet radiation having a wavelength of 400 nm or less, which is effective to activate the reactions in stage of decomposition and receiving. The conduct of exposure to ultraviolet radiation having a wavelength of 400 nm or less, provides a more efficient production of oxide p-type, because the ultraviolet radiation breaks the chemical bond between the organic substances contained in the composition and, thereby, promotes the decomposition of organic matter.

Exposure to ultraviolet radiation having a wavelength of 400 nm or less, is not particularly limited and may be selected depending on the intended purpose. An example of such involves exposure to ultraviolet radiation excimer lamp having a wavelength of 222 nm.

Instead of or in addition to UV radiation can preferably be processed by ozone. Obtaining oxide is activated when the ozone treatment composition which has been dried.

In �the benefits of obtaining the oxide of the p-type present invention, oxide p-type is obtained by means of a process carried out in a solvent. Therefore, the oxide of the p-type can be obtained easier in larger quantities and at lower costs than the oxide of the p-type obtained by a vacuum process.

In addition, using the method of producing oxide of the p-type present invention, it is possible to obtain the oxide is p-type, which has excellent conductivity p-type. In the method of producing oxide of the p-type present invention, the composition used for this purpose preferably contains a Cu-containing compound, wherein the divalent copper. In this case, the copper in the composition is divalent and the ratio of the number of Cu atoms to the number of oxygen atoms in the composition, therefore, is 1:1.

However, Cu in the oxide is p-type, obtained from the composition is monovalent, and thus the ratio of the number of Cu atoms to the number of oxygen atoms in the oxide of the p-type is 2:1. Composition has an excess of oxygen atoms relative to the Cu atoms upon receipt of the oxide is p-type. This composition leads to the oxide of the p-type, which had a large amount of oxygen to thereby suppress the occurrence of electrons due to oxygen defect. Therefore, it is possible to obtain the oxide of the p-type high hole concentration, which has an excellent specific electrical conductivity�Jo R-type.

"Semiconductor device"

A semiconductor device of the present invention includes at least the active layer, and optionally includes other elements.

"Active layer"

The active layer is not particularly limited and can accordingly be selected depending on the intended purpose, provided that it contains the oxide of the p-type present invention.

Mentioned above, the oxide is p-type present invention respectively contained in the active layer of the semiconductor device because it can provide the desired properties depending on goals by adjusting its composition. Thus, when the oxide is p-type, having optimized properties, is the active layer, the semiconductor device improves your performance.

The shape, structure and size of the active layer is not particularly limited and may be appropriately selected depending on the intended purpose. A semiconductor device includes a diode, a field effect transistor, light emitting device and a photoelectric Converter.

"Diode"

The diode is not particularly limited and may be appropriately selected depending on the intended purpose. For example, this may be a diode comprising a first electrode, a second electrode and an active layer, form fitting�shielded between the first electrode and the second electrode.

Examples include diode diode based on p-n junction and a PIN photodiode.

There are many known materials having a high transmittance of visible light, among oxide n-type semiconductors. Oxide p-type present invention may also pass visible light due to its wide forbidden zone. Thus, the oxide of the p-type present invention can lead to transparent to the diode, the diode based on p-n junction.

The p-n junction diode includes at least an active layer, and, if necessary, further includes other elements such as the anode (positive electrode) and cathode (negative electrode).

"Active layer"

The active layer includes at least a semiconductor layer of the p-type semiconductor layer is n-type, and, if necessary, further includes other elements.

The semiconductor layer of the p-type is in contact with a semiconductor layer of n-type.

"Semiconductor layer of the p- - type

The semiconductor layer of the p-type is not particularly limited and may be selected depending on the intended purpose, provided that it contains the oxide of the p-type present invention.

Composition and production conditions of the oxide of the p-type is preferably selected in such a way that it is possible to obtain such concentration and mobility of carriers that would serve as the active layer.

The average thickness of the p-type semiconductor layer is not particularly limited and may accordingly be selected depending on the intended purpose, but is preferably from 50 nm to 2000 nm.

"N-type semiconductor layer"

The material is n-type semiconductor layer is not particularly limited and can accordingly be selected depending on the intended purpose, but is preferably transparent oxide n-type semiconductor.

Transparent oxide n-type semiconductor is not particularly limited and can accordingly be selected depending on the intended purpose. Examples thereof include ZnO and IGZO (In·Ga·Zn·O).

In the case when using transparent oxide n-type semiconductor, the oxide of the p-type present invention may also pass visible light due to its wide gap, and thus can be obtained a transparent active layer.

A method of producing a semiconductor layer of n-type is not particularly limited and can accordingly be selected depending on the intended purpose. Examples thereof include a vacuum process such as sputtering method, method of pulsed laser deposition (PLD), CVD method and ALD method, the method of coating by dipping, a printing method such as an inkjet method, method of nanoimprinting.

The average thickness of the semiconductor layer of n-type �not limited especially and can respectively be selected depending on the intended purpose, but preferably ranges from 50 nm to 2000 nm.

When the semiconductor layer of the p-type and the semiconductor layer n-type both formed from a crystalline material, the following failures tend to be due to the fact that the crystals cannot be obtained due to the mismatch between the crystal lattices of the above-mentioned lamination of semiconductor layers and, thus, it is impossible to obtain a semiconductor device with excellent performance. In order to avoid failure in the work, materials, crystal lattice which are consistent among themselves, should be selected, which limits the type of materials used.

On the other hand, the use of the oxide of the p-type present invention for the semiconductor layer of the p-type, thereby, prevents the above-mentioned failure, despite the fact that the semiconductor layer is n-type crystal is. Accordingly, it is possible to form a good interface surface areas of the p-n junction. Oxide p-type present invention allows a wide range of semiconductor materials of n-type for use in diode to achieve excellent performance of the device.

The anode (positive electrode)"

The anode is in contact with the semiconductor layer p-type.

The anode material is not particularly limited and may be� accordingly selected depending on the intended purpose. Examples thereof include metals such as Mo, Al, Au, Ag and Cu, and alloys thereof; conductive transparent oxides such as ITO and ATO; organic conductors of electricity, such as polyethyleneoxide (PEDOT) and polyaniline (PANI).

The shape, structure and size of the anode is not particularly limited and can accordingly be selected depending on the intended purpose.

The anode is provided to make contact with the p-type semiconductor layer, and then between them preferably is formed by ohmic contact.

A method of manufacturing the anode is not particularly limited and can accordingly be selected depending on the intended purpose. Examples thereof include (i) the way in which a film is formed by, for example, by a sputtering method, or the method of coating by immersion with subsequent structuring of the film by a photolithography method; and (ii) the way in which a film having a desired shape, is formed by directly printing methods such as inkjet method, a method of nanoimprinting and intaglio printing.

The cathode (negative electrode)"

The cathode material is not particularly limited and can accordingly be selected depending on the intended purpose. For example, the cathode material may be the same as the one mentioned for the anode.

The shape, structure and size of the cathode is not particularly limited and mo�ut respectively be selected depending on the intended purpose.

The cathode is provided in order through the n-type semiconductor layer, and then between them preferably is formed by ohmic contact.

A method of manufacturing a cathode is not particularly limited and can accordingly be selected depending on the intended purpose. For example, the method can be the same as the one specified above for the anode.

"Method of producing a diode p-n junction "

One exemplary method of producing a diode p-n junction shown in figure 1 and will be further explained.

First, the cathode 2 is applied to the substrate 1.

The shape, structure and size of the substrate is not particularly limited and can accordingly be selected depending on the intended purpose.

The substrate material is not particularly limited and can accordingly be selected depending on the intended purpose.

Examples of the substrate include a glass substrate and a plastic substrate.

The glass substrate is not particularly limited and may accordingly be selected depending on the intended purpose. Examples thereof include a substrate alkali free glass and the quartz glass substrate.

Plastic substrate is not particularly limited and may accordingly be selected depending on the intended purpose. Examples thereof include polycarbonate (PC) substrate, polyimide (PI) substrate, polyethylenterephtalate (PET) substrate and Paul�ethylnaphthalene (PEN) substrate.

Moreover, the substrate is preferably pre-treated by washing with the use of oxygen plasma, UV ozone and UV radiation from the point of view of cleaning the surface and improve adhesion of the surface.

Then, the semiconductor layer of n-type 3 is applied to the cathode 2.

Then, the semiconductor layer of the p-type 4 is applied to the semiconductor layer of n-type 3.

Then, the anode 5 is applied to the semiconductor layer of the p-type 4.

As described above, the diode 6 is produced on the basis of the p-n junction.

"Field effect transistor"

Field-effect transistor includes at least a gate electrode, a source electrode, a drain electrode, the active layer and insulating layer, and as necessary, further contains other elements.

"A gate electrode"

The gate electrode is not particularly limited and can accordingly be selected depending on the intended purpose, provided is an electrode for voltage application to the gate.

The material of the gate electrode is not particularly limited and can accordingly be selected depending on the intended purpose. Examples thereof include metals such as Mo, Al, Au, Ag, Cu, and alloys thereof; conductive transparent oxides such as ITO and ATO; organic conductors of electric current, such as polyethyleneoxide (PEDOT) and polyaniline (PANI).

A method of manufacturing the electric�ode shutter is not particularly limited and can accordingly be selected depending on the intended purpose. Examples thereof include (i) the way in which a film is formed by, for example, by a sputtering method, or the method of coating by immersion with subsequent structuring of the film by a photolithography method; and (ii) a method in which a film having a desired shape, is formed by directly printing methods such as inkjet method, a method of nanoimprinting and intaglio printing.

The average thickness of the gate electrode is not particularly limited and may accordingly be selected depending on the intended purpose. It preferably ranges from 20 nm to 1 μm, more preferably from 50 nm to 300 nm.

The source electrode and the drain electrode"

The source electrode or the drain electrode is not particularly limited and can accordingly be selected depending on the intended purpose, provided that it is an electrode for discharging electric current from the field-effect transistor.

The material of the source electrode or the drain electrode is not particularly limited and can accordingly be selected depending on the intended purpose. Examples thereof include materials that are the same as described above for the gate electrode.

High contact resistance between the active layer and the source electrode or active layer and the drain electrode leads to the deterioration of the properties of the transistor. In order isbi�you this problem materials that lead to lower contact resistance, is preferably chosen as the source electrode and the drain electrode. In particular, it is preferable to choose materials that have a higher work function than the oxide of the p-type present invention contained in the active layer.

A method of manufacturing the source electrode and drain electrode is not particularly limited and can accordingly be selected depending on the intended purpose. For example, the method may be the same as that specified above for the gate electrode.

The average thickness of the source electrode or the drain electrode is not particularly limited and may accordingly be selected depending on the intended purpose. It preferably ranges from 20 nm to 1 μm, more preferably from 50 nm to 300 nm.

"Active layer"

The active layer contains an oxide of the p-type present invention.

The active layer is formed between the source electrode and the drain electrode. The phrase "between the source electrode and the drain electrode" as used herein means a position in which the active layer can force field-effect transistor to work in collaboration with the source electrode and the drain electrode. Until then, while the active layer is located in such a position, the position of the active layer is not particularly limited and may be ACC�tstone selected depending on the intended purpose.

The composition and conditions for obtaining oxide of the p-type is preferably selected so that it was possible to obtain a layer containing the concentration and mobility of carriers required to serve as the active layer.

The average thickness of the active layer is not particularly limited and may accordingly be selected depending on the intended purpose. It is preferably from 5 nm to 1 μm, more preferably from 10 nm to 300 nm.

"Insulating layer shutter"

The insulation layer of the gate is not particularly limited and can accordingly be selected depending on the intended purpose, provided that he is an insulating layer formed between the gate electrode and the active layer.

The material of the gate insulating layer is not particularly limited and can accordingly be selected depending on the intended purpose. Examples thereof include materials, widely used in industrial production, such as SiO2and SiNx, highly dielectric materials such as La2O3and HfO2and organic materials such as polyamide (PI) and fluorinated resin.

A method of manufacturing a gate insulating layer is not particularly limited and can accordingly be selected depending on the intended purpose. Examples thereof include a method of vacuum forming p�sister, such as a sputtering method, a method of chemical vapor deposition (CVD), molecular deposition (ALD), the method of coating by centrifugation, the coating method of punching and printing method such as an inkjet method.

The average thickness of the insulating transition layer is not particularly limited and may accordingly be selected depending on the intended purpose. It is preferably from 50 nm to 3 μm, more preferably from 100 nm to 1 micron.

The structure of a field effect transistor is not particularly limited and may accordingly be selected depending on the intended purpose. Examples thereof include a structure type top contact/bottom gate (Fig. 2), structure type bottom contact/bottom gate (Fig. 3), the structure type top contact/top gate (Fig.4) and structure type bottom contact/top gate (Fig. 5).

Figure 2 to 5, the reference position 21 denotes a substrate, 22 denotes an active layer, 23 denotes a source electrode, 24 denotes a drain electrode, 25 denotes an insulating layer shutter and 26 denotes a gate electrode.

Field-effect transistor suitable for use in the display device described below, but is not limited.

For example, field-effect transistor can be used for IC card (card key) or ID (map Udo�of tuleremia personality).

Field-effect transistor uses an oxide of the p-type present invention in the active layer, which allows the composition of the oxide of the p-type be regulated within wide limits. This leads to the active layer, which has preferable properties and, thus, improves the properties of the transistor.

In addition, the active layer is very homogeneous, since it is in the amorphous state, which reduces the non-uniformity of properties between individual transistors.

"A method of manufacturing a field-effect transistor"

Next will be explained one exemplary method of manufacturing a field-effect transistor.

First, the gate electrode is applied to a substrate.

The shape, structure and size of the substrate is not particularly limited and can accordingly be selected depending on the intended purpose.

The substrate material is not particularly limited and can accordingly be selected depending on the intended purpose.

Examples of the substrate include a glass substrate and a plastic substrate.

The glass substrate is not particularly limited and may accordingly be selected depending on the intended purpose. Examples thereof include a substrate alkali free glass and the quartz glass substrate.

Plastic substrate is not particularly limited and may accordingly be selected depending on the intended purpose. Examples thereof include�Ute: polycarbonate (PC) substrate, polyimide (PI) substrate, polyethylenterephtalate (PET) substrate and polietilentereftalatnoy (PEN) substrate.

Moreover, from the point of view of cleaning the surface and improve adhesion surface, the substrate is preferably pre-treated by washing with an oxygen plasma, ozone with UV and UV radiation.

Then, the insulation layer of the gate is applied to the surface of the electrode paddle.

Then, the active layer containing the oxide of the p-type, which is the area of the channel is applied to the surface of the insulating layer of the gate.

Then, the source electrode and the drain electrode are applied to the surface of the insulating layer of the gate so that the source electrode and the drain electrode are separated from each other by the active layer.

As described above, the produced field-effect transistor. In this method, the field effect transistor type top contact/bottom gate is manufactured, for example, as shown in figure 2.

A semiconductor device includes an oxide of the p-type present invention in the active layer. Depending on the intended purpose (specific conductance) can achieve the desired properties of the oxide p-type by adjusting its composition. That is, when the oxide is p-type, having optimized properties, is the active layer, the semiconductor device �might improve the relevant properties.

Field-effect transistor as a semiconductor device of the present invention, can lead to a TFT having excellent performance.

In addition, the active layer has a high degree of homogeneity due to its formlessness, which reduces the non-uniformity of properties between individual transistors.

"The display device"

The display device includes at least a control device and light control scheme, by which actuate the control device of light and, if necessary, may optionally include other elements.

"The light"

The light is not particularly limited provided that it represents a device that controls the light output based on the synchronization signal of the television transmitter, and can be appropriately selected depending on the goal. Examples of control devices include organic light electroluminescent (EL) device, an electrochromic (EC) devices, liquid crystal devices, electrophoretic devices, and devices based on the technology of electromachine.

"Management scheme"

The management scheme is not particularly limited, provided that it has a semiconductor device of the present image�etenia, and it may be appropriately selected depending on the goal.

"Other elements"

Other elements are not particularly limited and can be appropriately selected depending on the goal.

The display device of the present invention is a semiconductor device (e.g., field-effect transistor), which reduces the unevenness between devices. In addition, the display device can control the leading transistor at a constant gate voltage, even when the display device is exposed to time-dependent changes, which allows you to use the device for a long time.

"Hardware playback image on the screen"

Equipment playback image on the screen of the present invention includes at least a plurality of display devices, a lot of transactions, control apparatus displays and, if necessary, may further include other elements.

"The display device"

The display device is not particularly limited and may be selected depending on the intended purpose, provided that it is a display device of the present invention, combined in a matrix form.

"Transaction"

The wiring is not particularly limited�ena and can accordingly be selected depending on the intended purpose, provided that she can individually bring the gate voltage and the video signal for each field effect transistor in the display device.

"Control techniques for mapping"

The apparatus controls the display is not particularly limited and may accordingly be selected depending on the intended purpose, provided that it can individually control the gate voltage and the signal voltage in each transistor through many transactions on the basis of the image data.

"Other elements"

Other elements are not particularly limited and can accordingly be selected depending on the intended purpose.

Equipment playback image on the screen of the present invention can stably operate for a long time because it includes the display device of the present invention.

Equipment playback image on the screen of the present invention can be used as a unit indicator in portable information equipment, such as cell phones, portable music players, portable video players, e-books and PDA (Personal Digital Assistant), and in the playback devices, such as cameras and camcorders. It can also be used as various information devices� display in mobile systems, such as cars, airplanes, trains and ships. In addition, it can be used as various information display devices in the measuring instrument, analysing instruments, medical devices and means of advertisement.

"System"

The system of the present invention includes at least the apparatus of the reproduced image of the present invention and the apparatus generating the image data.

Apparatus generating image data produces image data based on image information to be shown, and outputs the video data to the playback apparatus in the image. The system of the present invention provides a video information for display with high resolution, since the system includes apparatus for playback.

Next will be explained the equipment of the reproduced image of the present invention.

Equipment playback image of the present invention can be described in paragraphs [0059] and [0060], and shown in figures 2 and 3 of the patent document JP-A No. 2010-074148.

Further in this document one exemplary embodiment of the present invention will be explained with reference to the accompanying figures.

Figure 6 shows an explanatory view of the display in which the device otobrazheni� are arranged in matrix form.

The display has n scanning lines (X0, X1, X2, X3, ..., Xn-2, Xn-1), which are located at an equal distance along the X-axis, m - bus data (Y0, Y1, Y2, Y3, ..., Ym-1), which are located at an equal distance along the Y axis direction, and m - power inlet (Y0i, Y1i, Y2i, Y3i, ..., Ym-1i), which are located at an equal distance along the Y axis direction, as shown in figure 6.

Accordingly, the display device 302 may be identified by analyzing the number line, and number of the data bus.

Figure 7 is a schematic structural view of one exemplary display device of the present invention.

The display device includes an organic EL (electroluminescent) device 350, and a control circuit 320, which allows the organic EL device 350 to emit light, as shown by example in figure 7. Thus, the display 310 is a so-called active matrix organic electroluminescent display. The display 310 is 81,28 cm (32-inch) color display. Moreover, the size of the display 310 is not limited.

The control circuit 320 shown in figure 7, will be explained.

The control circuit 320 includes two field effect transistors 10 and 20 and the capacitor 30.

Field-effect transistor 10 serves as a switching device. The gate electrode G of the field transistors�and 10 is connected to a predefined scanning line, and the source electrode S of the FET 10 is connected with a predetermined data bus. The drain electrode D of the FET 10 is connected to one contact terminal of the capacitor 30.

Field-effect transistor 20 supplies current supply to the organic EL device 350. The gate electrode G of the FET 20 is connected to the drain electrode D of the FET 10. The drain electrode D of the FET 20 is connected to a positive electrode of the organic EL device 350. The source electrode S of the FET 20 is connected to a predefined power line.

The capacitor 30 stores the energy charge of a field-effect transistor 10, i.e. data. The other terminal of the capacitor 30 is connected to a predefined current line.

Accordingly, when the field effect transistor 10 is on, the image data is stored in the capacitor 30 through the line Y2. Even after field-effect transistor l0 is turned off, the field effect transistor 20, which is set in the "on" position allows the organic EL device 350 to be in working condition.

Figure 8 illustrates one exemplary positional relationship between the organic EL device 350 and the field-effect transistor 20 serving as control circuit in the display device 302. In this figure, the organic EL device 350 is located from the side of the field-effect transistor 20 on� same basis. In addition, field-effect transistor and a capacitor (not shown) are also on the same basis.

Providing a protective layer over the active layer 22 is applicable, but not shown in the figure 8. For example, SiO2SiNx, AI2O3or fluoropolymers can be appropriately used as the material of the protective layer.

Alternatively, the organic EL device 350 may be positioned over the field-effect transistor 20, as shown in figure 9. In this case, the shutter electrode 26 should be transparent and, therefore, transparent conductive oxides are used as the material of the shutter electrode 26, for example, ITO, In2O3, SnO2, ZnO, Ga-containing ZnO, Al-containing ZnO and Sb-containing SnO2. In particular, the position number 360 denotes an interlayer insulating film (leveling film). The material of the interlayer insulating film includes a resin such as polyamide resin and acrylate resin.

Figure 10 is a diagram of one exemplary organic EL device.

Figure 10 organic EL device 350 includes a negative electrode 312, the positive electrode 314 and the organic EL thin film layer 340.

The material of the negative electrode 312 is not particularly limited and may be appropriately selected depending on the intended purpose. Examples thereof include al�mini (Al), alloy magnesium (Mg)-silver (Ag), an alloy of aluminum (Al)-lithium (Li) and ITO (indium tin oxide). It should be noted that the alloy of magnesium (Mg)-silver (Ag) leads to the electrode with high reflectivity, when the alloy Mg-Ag is thick enough.

Meanwhile, Mg·Ag alloy leads to a semi-transparent electrode, when Mg·Ag alloy is very thin (less than approximately 20 nm). In this figure, the light goes out from the positive electrode, but the light may extend from the side of the negative electrode when the negative electrode is transparent or translucent.

The material of the positive electrode 314 is not particularly limited and, accordingly, can be selected depending on the intended purpose. Examples thereof include ITO (indium-tin oxide), IZO(indium zinc oxide), and an alloy of silver (Ag)-neodymium (Nd). It should be noted that the alloy of silver leads to the electrode with high reflectance, which is suitable when the light goes out from the negative electrode.

Organic EL thin film layer 340 includes a layer of electron transport 342, a light-emitting layer 344, the layer transfer holes 346. The layer of electron transport 342 is connected to the negative electrode 312, a layer of hole transfer 346 is connected to the positive electrode 314. When a predetermined voltage is applied between the positive electrode 314 and negative electric�originating 312, a light-emitting layer 344 emits light.

The layer of electron transport 342 and a light-emitting layer 344 can be in a single layer. Layer injection of electrons can be provided between the layer of electron transport 342 and the negative electrode 312, and a layer of injection holes may be further provided between the layer of hole transfer 346 and the positive electrode 314.

The so-called type bottom emission organic EL device in which light enters from the side of the substrate has been described, but the type of "top-emission organic EL device in which light exits from the side opposite to the substrate, can also be used.

Figure 11 is a schematic structural view of another exemplary device of the reproduced image of the present invention.

In figure 11, the instrument image reproduction includes a variety of display devices 302, Postings (the scanning line, the bus data transfer and power inlet), and the equipment controlling the display 400.

Instrument control display 400 includes a processing device of the image data 402 and the bus data transfer control circuit 406.

The processing device the image data 402 determines the brightness of each of the plurality of display devices 302 on the display based on the signal output from the video output circuit.

Line ska�of debugger control circuit 404 individually applies a voltage to the n scanning lines in response to a command from the processing device the image data 402.

The bus data control circuit 406 individually energizes m tire data in response to a command from the processing device the image data 402.

Implementation option in the case where the device control light is an organic EL device has been described, but is not limited to this. For example, the light may be an electrochromic device.

In this case, the display is an electrochromic display.

In addition, the light may be a liquid crystal device, in this case, the reproducing device is an LCD playback device, and do not want to use any of the power supply line to the playback device 302', as shown in figure 12. As shown in figure 13, the control circuit 320' may be based on a field-effect transistor 40, which corresponds to the field effect transistors 10 and 20. In a field-effect transistor 40, the gate electrode G is connected to a predetermined scanning line, the source electrode S is connected to a given bus data. The drain electrode D is connected to the capacitor 361 and the pixel electrode of the liquid crystal device 370.

The light may be electrophoretic device, an organic EL device or electromotively device(the device on the basis of technology of electromachine).

An implementation option, in the case when the system of the present invention is a television apparatus, has been described, but is not limited to this. The system can be any system that has equipment that reproduces the image on the screen as a device that reproduces the image on the screen and informs. For example, the system may be a computer system in which the computer including a personal computer, is connected to the reproducing apparatus, the image on the screen.

The system of the present invention can stably operate for a long time, because it involves hardware playback image of the present invention.

Examples

Next will be explained examples of the present invention, but these examples should not be construed as limiting the scope of the present invention.

"The examples 1 to 11"

"Getting xMgO·yCu2O oxide semiconductor (amorphous)"

A solution of 2-ethylhexanoate magnesium (3,0% by mass) in toluene was mixed with a solution of neodecanoate copper (8,28% by mass) in toluene, then was diluted with toluene for the purpose of obtaining ink for xMgO·yCu2O oxide semiconductor. The attitude solution of 2-ethylhexanoate magnesium (3,0% by mass) in toluene to a solution of neodecanoate copper (8,28% by mass) in toluene was installed� so, to the molar ratio of Mg to Cu in the mixed solution would be x:2y.

Then, the ink for xMgO·yCu2O oxide semiconductor centrifugation was applied onto a glass substrate was dried for 1 hour at a temperature of 120°C and calcined for 3 hours at 250°C while irradiating with an excimer lamp (wavelength: 222 nm) in a stream of oxygen for the formation of a film of the composition of xMgO·yCu2O.

Table 1 below shows the values of each are included in the number of solution of 2-ethylhexanoate magnesium (3,0% by mass) in toluene and a solution of neodecanoate copper (8,28% by mass) in toluene, and the values "x" and "y", and the thickness of the obtained xMgO·yCu2O oxide semiconductor.

Table 1
XA solution of 2-ethylhexanoate magnesium (3,0% by mass) in tolueneSolution neodecanoate copper (8,28% by mass) in tolueneThicknessSpecific volume resistance
Included quantity [ml]The amount of Mg is included in the amount [mol] Included quantity [ml]The number of Cu included in the amount [mol][nm][Ω]
PR.19910,00861,0 E-050,1542,0 E-0465,28.48 to E-01
PR.223770,02593,0 E-050,1542,0 E-0480,24,74 E+00
PR.329710,03454,0 E-050,1542,0 E-0474,03,11 E+01
PR.438620,05176,0 E-050,1542,0 E-0489,32,15 E+02
WP5 41590,06037,0 E-050,1542,0 E-04102,32,86 E+03
PR.644560,06908,0 E-050,1542,0 E-04100,01,08 E+04
PR.750500,08621,0 E-040,1542,0 E-0483,71,31 E+05
PR.860400,1291,5 E-040,1542,0 E-0473,81,40 E+06
PR.967330,1732,0 E-040,1542,0 E-04 80,48,25 E+06
PR.1080200,3454,0 E-040,1542,0 E-04106,43,56 E+09
PR.1190100,7769,0 E-040,1542,0 E-04109,26,74 E+10

In the above table, E stands for "decimal order numbers". For example, "1.0 E-05" means "0,00001", and "1.0 E+02" means "100".

(Examples 12 to 22)

"Getting xCaO∙yCu2O oxide semiconductor (amorphous)"

A solution of 2-ethylhexanoate calcium (5.0 per cent by weight) in white spirit mixed with a solution of neodecanoate copper (8,28% by mass) in toluene, then was diluted with toluene for the purpose of obtaining ink for xCaO∙yCu2O oxide semiconductor. The attitude solution of 2-ethylhexanoate calcium (5.0 per cent by weight) in white spirit to a solution of neodecanoate copper (8,28% by mass) in toluene was determined so that the molar ratio of CA to Cu in the mixed solution would be x:2y.

Then, the ink for xCaO∙yCu2O oxide polypr�the rider is using centrifugation was applied onto a glass substrate, was dried for 1 hour at a temperature of 120°C and calcined for 3 hours at 250°C, at the same time, irradiating with an excimer lamp (wavelength: 222 nm) in a stream of oxygen for the formation of a film of the composition of xCaO∙yCu2O.

Table 2 below lists the values of each are included in the number of solution of 2-ethylhexanoate calcium (5.0 per cent by weight) in white spirit and solution neodecanoate copper (8,28% by mass) in toluene, and the values "x" and "y", and the thickness of the xCaO∙yCu2O oxide semiconductor.

5,7 E-04
Table 2
XA solution of 2-ethylhexanoate calcium (5,0% by mass) in white spiritSolution neodecanoate copper (8,28% by mass) in tolueneThicknessSpecific volume resistance
Included quantity [ml]The number of CA included in the amount [mol]Included quantity [ml]The number of Cu included in the amount [mol][nm]Ω]
PR.129910,00801,0 E-050,1542,0 E-0463,77,35 E+00
PR.1317830,01602,0 E-050,1542,0 E-0466,07,93 E+00
PR.1431690,03654,6 E-050,1542,0 E-0466,91,77 E+01
PR.1550500,08021,0 E-040,1542,0 E-0475,01,74 E+02
PR.1655450,09621,2 E-040,154 2,0 E-0490,0Of 5.81 E+03
PR.176238Of 0.1281,6 E-040,1542,0 E-0488,11,11 E+05
PR.1867330,1602,0 E-040,1542,0 E-04108,81,22 E+04
PR.1971290,1922,4 E-040,1542,0 E-0480,04,08 E+05
PR.2075250,2403,0 E-040,1542,0 E-0488,83,22 E+07
PR.2185150,4540,1542,0 E-0473,34,61 E+09
PR.2290100,7219,0 E-040,1542,0 E-0466,09,18 E+09

In the above table, E stands for "decimal order numbers". For example, "1.0 E-05" means "0,00001", and "1.0 E+02" means "100".

(Examples 23 to 34)

"Getting xSrO·yCu2O oxide semiconductor (amorphous)"

A solution of 2-ethylhexanoate strontium (2,0% by mass) in toluene was mixed with a solution of neodecanoate copper (8,28% by mass) in toluene, then was diluted with toluene to obtain an ink for xSrO·yCu2O oxide semiconductor. The attitude solution of 2-ethylhexanoate strontium (2,0% by mass) in toluene to a solution of neodecanoate copper (8,28% by mass) in toluene was determined so that the molar ratio of CA to Cu in the mixed solution would be x:2y.

Then, the ink for the oxide semiconductor xSrO·yCu2O using centrifugation was applied onto a glass substrate was dried for 1 hour at a temperature of 120°C and calcined for 3 hours at 250°C, while irradiating with the help of� excimer lamp (wavelength: 222 nm) in a stream of oxygen for the formation of a film of the composition xSrO·yCu 2O.

In table 3 below lists the values of each are included in the number of solution of 2-ethylhexanoate strontium (2,0% by mass) in toluene and a solution of neodecanoate copper (8,28% by mass) in toluene, and the values "x" and "y", and the thickness of the xSrO·yCu2O oxide semiconductor.

15
Table 3
XA solution of 2-ethylhexanoate strontium(2,0% by mass) in tolueneSolution neodecanoate copper (8,28% by mass) in tolueneThicknessSpecific volume resistance
Included quantity [ml]The number of Sr included in the amount [mol]Included quantity [ml]The number of Cu included in the amount [mol][nm][Ω cm]
PR.239910,04381,00 E-050,1542,00 E-04 80,31,26 E+00
PR.2417830,08762,00 E-050,1542,00 E-0473,21,57 E+00
PR.2523770,01313,00 E-050,1542,00 E-0475,22,37 E+00
PR.2631690,01994,60 E-050,1542,00 E-0470,71,05 E+01
PR.2750500,04381,00 E-040,1542,00 E-0457,72,06 E+03
PR.2862380,7011,60�-04 0,1542,00 E-0495,32,24 E+04
PR.2964360,7891,80 E-040,1542,00 E-04At 82.82,45 E+05
PR.3067330,8762,00 E-040,1542,00 E-04Of 57.3Of 7.88 E+03
PR.3171291,0512,40 E-040,1542,00 E-0453The 7.25 E+06
PR.3272281,1392,60 E-040,1542,00 E-0451,12,80 E+07
PR.33852,4835,70 E-040,1542,00 E-0420,22,23 E+08
PR.3490102,9459,00 E-040,1542,00 E-04The 17.31,55 E+09

In the above table, E stands for "decimal order numbers". For example, "1.0 E-05" means "0,00001", and "1.0 E+02" means "100".

Examples 35 through 44)

"Getting xBaO·yCu2O oxide semiconductor (amorphous)"

A solution of 2-ethylhexanoate barium (of 8.0% by mass) in toluene was mixed with a solution of neodecanoate copper (8,28% by mass) in toluene, then was diluted with toluene to obtain an ink for xBaO·yCu2O oxide semiconductor. The attitude solution of 2-ethylhexanoate barium (of 8.0% by mass) in toluene to a solution of neodecanoate copper (8,28% by mass) in toluene was determined so that the molar ratio of CA to Cu in the mixed solution would be x:2y.

Then, the ink for xBaO·yCu2O oxide semiconductor using centrifugation was applied onto a glass substrate was dried for 1 hour at a temperature of 120°C and calcined for 3 hours�in at 250°C, at the same time, irradiating with an excimer lamp (wavelength: 222 nm) in a stream of oxygen for the formation of a film of the composition of xBaO·yCu2O.

In table 4 below lists the values of each are included in the number of solution of 2-ethylhexanoate barium (of 8.0% by mass) in toluene and a solution of neodecanoate copper (8,28% by mass) in toluene, and the values "x" and "y", and the thickness of the obtained xBaO·yCu2O oxide semiconductor.

Table 4
XA solution of 2-ethylhexanoate barium (of 8.0% by mass) in tolueneSolution neodecanoate copper (8,28% by mass) in tolueneThicknessSpecific volume resistance
Included quantity [ml]The number of Islands included in the amount [mol]Included quantity [ml]The number of Cu included in the amount [mol][nm][Ω cm]
PR.35991 0,01721,0 E-050,1542,0 E-04For 63.12,72 E+00
PR.3617830,03432,0 E-050,1542,0 E-0473,34,29 E+00
PR.3723770,06874,0 E-050,1542,0 E-0483,55,80 E+00
PR.3850500,1721,0 E-040,1542,0 E-0466,93,77 E+01
PR.3960400,2571,5 E-040,1542,0 E-04Of 76.61,70 E+03
P�.40 66340,3432,0 E-040,1542,0 E-0450,27,14 E+02
PR.4175250,5153,0 E-040,1542,0 E-0469,81,42 E+09
PR.4280200,6874,0 E-040,1542,0 E-04109,58,01 E+09
PR.4385150,9735,7 E-040,1542,0 E-04102,82,86 E+10
PR.4490101,5459,0 E-040,1542,0 E-04 74,57,20 E+09

In the above table, E stands for "decimal order numbers" for Example, "1.0 E-05" means "0,00001", and "1.0 E+02" means "100".

(Example 45)

"Obtaining an oxide semiconductor Cu2O (amorphous)"

Solution neodecanoate copper (8,28% by mass) in toluene was diluted with toluene to obtain an ink for an oxide semiconductor Cu2O.

Then, the ink for the oxide semiconductor Cu2O using centrifugation was applied onto a glass substrate was dried for 1 hour at a temperature of 120°C and calcined for 3 hours at 250°C, at the same time, irradiating with an excimer lamp (wavelength: 222 nm) in a stream of oxygen for the formation of a film of the composition of Cu2O. In table 5 below summarizes the result of the thickness of the obtained oxide semiconductor Cu2O.

Table 5
XThicknessSpecific volume resistance
[nm][Ω cm]
Example 450100 80,41,07 E+00

In the above table, E stands for "decimal order numbers". For example, "1.0 E-05" means "0,00001", and "1.0 E+02" means "100".

(Examples 46 to 49)

"Obtaining an oxide semiconductor xAO·yCu2O (amorphous)"

(A = two or more elements selected from Mg, Ca, Sr and Ba)

A solution of 2-ethylhexanoate magnesium (3,0% by mass) in toluene, a solution of 2-ethylhexanoate calcium (5.0 per cent by weight) in white spirit, a solution of 2-ethylhexanoate strontium (2,0% by mass) in toluene and a solution of 2-ethylhexanoate barium (of 8.0% by mass) in toluene was mixed with a solution of neodecanoate copper (8,28% by mass) in toluene included according to the amounts specified in tables 6-1 and 6-2, followed by dilution with toluene to obtain an ink for an oxide semiconductor composition xAO·yCu2O.

Then, the ink for the oxide semiconductor xAO·yCu2O using centrifugation was applied onto a glass substrate was dried for 1 hour at a temperature of 120°C and calcined for 3 hours at 250°C, at the same time, irradiating with an excimer lamp (wavelength: 222 nm) in a stream of oxygen for the formation of a film of the composition xAO·yCu2O. In the film composition xAO·yCu2O, A consists of two or more elements selected from Mg, Ca, Sr and Ba. Table 7 lists the values "x" and "y" are calculated from the ratio of moles of Cu and total�th ratio of moles of Mg, Ca, Sr and Ba, as well as the percentage of each element of A, which is calculated in accordance with the percentage of Mg, Ca, Sr and Ba. In the following table 7 shows the result of thicknesses obtained xAO·yCu2O oxide semiconductor.

Table 6-1
A solution of 2-ethylhexanoate magnesium (3,0% by mass) in tolueneA solution of 2-ethylhexanoate calcium (5,0% by mass) in white spiritA solution of 2-ethylhexanoate strontium (2,0% by mass) in toluene
Included quantity [ml]The amount of Mg is included in the amount [mol]Included quantity [ml]The amount of Ca is included in the amount [mol]Included quantity [ml]The number of Sr included in the amount [mol]
PR.46000,00445,5 E-060,00962,2 E-06
PR.472,3 E-050000
PR.480,01001,2 E-050,00556.8 E-06Of 0.01182,7 E-06
PR.49000,010914,0 E-050,02375.4 E-06

Table 6-2
A solution of 2-ethylhexanoate barium (of 8.0% by mass) in tolueneSolution neodecanoate copper (8,28% by mass) in toluene
Included quantity [ml]The number of Islands included in the amount [mol]Included quantity [ml]The number of Cu included in the amount [mol]
PR.460,00311,8 E-060,0391 5,1 E-05
PR.470,00774,5 E-060,06879,0 E-05
PR.48Of 0.00382,2 E-060,04906,4 E-05
PR.49000,02923.8 E-05

In the above table, E stands for "decimal order numbers" for Example, "1.0 E-05" means "0,00001", and "1.0 E+02" means "100".

Table 7
XThe percentage of each element constituting And xAO·yCu2OThicknessSpecific volume resistance
Sa%Mg%Sr%VA%[nm]
PR.462773 580231943,02,27 E+01
PR.473862084016Of 64.07,24 E+02
PR.484242295012958,36,91 E+02
PR.49505072028087,31,09 E+04

In the above table, E stands for "decimal order numbers". For example, "1.0 E-05" means "0,00001", and "1.0 E+02" means "100".

(Comparative example 1)

"Getting Sr-Cu oxide (crystalline)"

The oxide film thickness of 100 nm was formed on a glass substrate by the method of RF magnetron sputtering using a sintered SrCu2 O2(diameter: 10.16 cm (4 inches)) as a target. Argon and oxygen were used as sputtering gas. The method of RF magnetron sputtering was performed under the following conditions: the total pressure of 1.1 PA, oxygen concentration: 80% and RF power: 100 watts. The substrate temperature during formation of the film was maintained using a heater at a temperature of 300°C and slowly cooled to room temperature at a rate of 2°C per minute after the formation of the film.(Comparative example 2)

"Obtaining oxide Sr-Cu (crystal)"

The oxide thickness of 100 nm was formed on a glass substrate using the same method as in comparative example 1 and then heated for 1 hour at 500°C in a nitrogen atmosphere.

(Analysis)

"X-ray diffraction"

Studies of x-ray diffraction (X' PertPro; product from Royal Philips Electronics) were performed for each of the examples. Figures 14 through 30 illustrate the results of a study of x-ray diffraction for the samples of examples 1, 3, 7, 9, 12, 14, 15, 18, 24, 27, 30, 32, 35, 38, 40, 43 45, respectively.

In the figures 14 to 30, no diffraction peaks were observed, which confirm the amorphous state of these oxide films. Similarly, no diffraction peaks were observed in studies performed for other pieces�. Thus, it was found that the samples of examples were in the amorphous state.

As a result of x-ray diffraction analysis of the sample of comparative example 1 was observed many diffraction peaks. The measurement of the diffraction angle (20) itself has confirmed that the oxide SrCu2O3comparative example 1 was crystalline.

As a result of x-ray diffraction analysis of the sample of comparative example 2, a diffraction peak was observed when the angle of diffraction corresponding to metallic copper. From the above result, it was found that during heat treatment of the oxide of Cu was recovered to Cu metal.

"Thickness"

The thickness was determined with the help of the device Spectral Film Thickness Monitor FE-3000, a product from the company Otsuka Electronics Co., Ltd.), analyzing the reflection spectrum in the wavelength range from about 300 nm to about 700 nm.

"Volume resistivity"

Volume resistivity was measured for the oxide films obtained in the above examples. The results are shown in tables 1 through 5 and 7, and figures 31 to 34. In cases where the sample has an electrical resistivity of 1×103Ω or less, the volume resistivity was measured by the device for measuring low electrical resistivity LORESTA GP (product by Mitsubishi Chemical Analytech Co., Ltd.) Meanwhile, when the sample has an electrical resistivity of over 1×103Ω, the volume resistivity was calculated based on PV characteristics between a pair of electrodes, which are linear Au electrodes formed on the oxide film.

As can be seen from tables 1 through 5 and 7, and figures 31 to 34, all samples of the above examples have conductivity. In addition, it was found that the volume resistivity tends to increase with increasing x value, volume resistivity varies in a very wide range from about 1 Ω to about 1011Ω.

Oxide p-type film of the present invention can be used in various semiconductor devices, but the property that is required for semiconductor devices (i.e., resistivity) usually varies depending on the type and properties of the semiconductor device. Thus, the x value may appropriately be selected depending on the purpose, provided that, when the volume resistivity of the oxide film is more than 108Ω, ohmic contact cannot easily be formed when connecting to the electrode, which is actually not preferred. To surround with specific�rotellini was 10 8Ω or less, in the case of xMgO·yCu2O, x should preferably be less than 80. In the case of xCaO·yCu2O, x should preferably be less than 85. In the case of xSrO·yCu2O, x should preferably be less than 85. In the case of xBaO·yCu2O, x should preferably be less than 75.

I-V characteristics were also determined for the samples of comparative examples 1 and 2 in the same manner as in the examples of the present invention. That is, a pair of electrodes which are linear Au electrodes were formed on the oxide film and then measured I-V characteristics between the electrodes. It was found that the crystals SrCu2O3comparative example 1 showed linear I-V characteristic and had a volume resistivity of 1012Ω or more. This result suggests that the specific conductance of the p-type was not detected, because Cu was bivalent in crystals SrCu2O3. Volume resistivity of the sample of comparative example 2 was found to be 3×107Ω. This suggests that heat treatment reduced the resistivity. In fact, the decrease was due to the production of metallic Cu. That is, the specific conductance of the p-type cannot be controlled in crystalline Sr-Cu oxide.

(Example 50)

"Getting the p-n junction di�Yes"

Preparation of basis

Glass non-alkali plate (thickness: 0.7 mm) was used as substrate. The glass substrate was cleaned by ultrasound, with a neutral detergent, distilled water and isopropyl alcohol. After drying, the substrate is further treated with UV ozone for 10 minutes at 90°C.

"Forming a cathode electrode"

The cathode electrode was formed by depositing Al using a metallic mask on a glass substrate so as to obtain a thickness of 100 nm.

"The formation of the n-type semiconductor layer"

Oxide film on the basis of the Mg-In formed by the RF sputtering method using a metallic mask on the cathode electrode. As a target used sintered polycrystals, the composition of which was In2MgO4(diameter: 10.16 cm (4 inches)). Ultimate vacuum within the chamber deposition was 2×10-5PA. Costs gas of argon and oxygen during the deposition were adjusted so that the total pressure was 1.0 PA and the partial pressure of oxygen was of 6.0×10-2PA.

The substrate temperature was not controlled during sputtering. Oxide film on the basis of the Mg-In, having a thickness of 160 nm is formed by sputtering with a power of 150 W and the time of spraying 15 minutes.

"The formation of the p-type semiconductor�new layer"

Film composition 41MgO·59Cu2O having a thickness of 109 nm, was formed on a semiconductor layer of n-type in the same manner as in example 5.

"The formation of anode electrode"

The anode electrode is formed by depositing Al using metallized photomask to the semiconductor layer of the p-type so that the thickness was 100 nm.

As stated above, there was obtained a p-n junction diode.

"Appraisal"

The diode of example 50 was determined I-V characteristic. The result is shown in figure 35. Observed typical curve rectification of electric current.

That is, it is found that the p-n junction diode can be obtained through use of the oxide of the p-type present invention as the active layer.

(Example 51)

"The fabrication of field-effect transistor"

Preparation of the substrate (the electrode with the gate insulating layer of the gate)

Si wafer with a thermal oxide film (thickness: 200 nm) was used as substrate. Si substrates were cleaned by ultrasound, with a neutral detergent, distilled water and isopropyl alcohol. After drying, the substrate is further treated with UV ozone for 10 minutes at 90°C. In this case, thermal oxide film was used as a gate insulating layer, and the Si wafer functioned as the gate electrode.

"Formirovaniyabrenda layer"

Ink for 9MgO·91Cu2O oxide semiconductor spin deposited on a Si substrate was dried for 1 hour at a temperature of 120°C and calcined for 3 hours at 250°C, at the same time irradiating with an excimer lamp (wavelength: 222 nm) in a stream of oxygen for the formation of a film of the composition 9MgO·91Cu2O, having an average thickness of 71 nm.

Thereafter, the active layer is formed by applying photoresist on the film, with subsequent preliminary zadovolenyam, exposure of the exposing device and the manifestation of the resulting coating film photoresist to form a pattern in the photoresist layer corresponding to that which will be formed on the active layer. Furthermore, the film composition 9MgO·91Cu2O existing in the area where the pattern in the photoresist layer was not formed, was removed by using an etching method, and then the photoresist is patterned in the layer is also removed to form the active layer.

"The formation of the source electrode and the drain electrode"

The source electrode and the drain electrode formed by applying a Cr thickness of 1 nm and Al with a thickness of 100 nm in this order by using metallized mask to the active layer. The length and width of the conducting channel was 50 μm and 0.4 mm, respectively.

Finally, the obtained electrode of the source electrode runoff was annealed for 1 hour at 300°C in a stream of oxygen to produce a field-effect transistor.

"Appraisal"

Field-effect transistor obtained in example 51, was determined for the transfer characteristics (Vds=-20 V) and is, in normal operation, the field-effect transistor model, which shows excellent properties of the transistor of the p-type.

(Comparative example 3)

"The fabrication of field-effect transistor"

Field-effect transistor was manufactured in the same way as in example 51, except that the active layer was formed as follows:

"The formation of the active layer"

Crystal SrCu2O3film having an average thickness of 65 nm, was created in the same way as in comparative example 1.

Thereafter, the active layer is formed by applying photoresist on the film, with subsequent preliminary zadovolenyam, exposure of the exposing device and the manifestation of the resulting coating film photoresist to form a pattern in the photoresist layer corresponding to that which will be formed on the active layer. In addition, the film SrCu2O3existing in the area where the pattern in the photoresist layer was not formed, was removed by using an etching method, and then the photoresist is patterned in the layer is also removed to form the active layer.

"Appraisal"

Field-effect transistor of comparative Primera determined for the transfer characteristics (Vds=-20 V) and found the active layer has a too high resistance in order to show the characteristics of the transistor.

(Example 52)

"The fabrication of field-effect transistor"

Preparation of basis (the electrode with the gate insulating layer of the gate).

Si wafer with a thermal oxide film (thickness: 200 nm) was used as the substrate. Si substrates were cleaned by ultrasound, with a neutral detergent, distilled water and isopropyl alcohol. After drying, the substrate is further treated with UV ozone for 10 minutes at 90°C. In this case, thermal oxide film was used as a gate insulating layer, and the Si wafer functioned as the gate electrode.

"The formation of the source electrode and the drain electrode"

HMDS (hexamethyldisilazane) was applied by centrifugation at will enclose Si with thermal oxide film and dried. The obtained substrate was subjected to hydrophobization. Then, for the method of the explosive photolithography the basic protective layer produced by the method of centrifugation, followed by drying. In addition, the photosensitive layer of photoresist was applied over a base protective layer by the method of centrifugation, followed by drying. The obtained laminate was applied, the image is exposed through a photomask with a subsequent manifestation, �before formation of the layer, consisting of the electrode material Pt, a DC sputtering method on the laminate. In was used as the target Pt (diameter: 10.16 cm (4 inches)). Ultimate vacuum in the sputtering chamber was 1×10-3PA. After deposition, the pressure was adjusted to 0.35 PA using a gas stream of argon. The substrate temperature was not controlled during sputtering. A Pt film having a thickness of 50 nm formed with a sputtering DC 200 W and time of spraying 6 minutes and 15 seconds.

Then, the substrate with the Pt film was immersed in N-methylpyrrolidone for removing unwanted areas of a Pt film with a photoresist so as to obtain a Pt source electrode and Pt electrode runoff, both of which have the desired shape.

"The manufacture of semiconductor inks for inkjet printing"

The nitrate trihydrate copper (2.42 g, equivalent to 10 mmol) was dissolved in 2-methoxyethanol (10 ml) to obtain a stock solution of copper. The hexahydrate magnesium nitrate (2,56 g, equivalent to 10 mmol) was dissolved in 2-methoxyethanol (10 ml) to obtain a stock solution of magnesium.

Ethylene glycol (24 ml) was mixed with 2-methoxyethanol (12 ml), the initial solution of copper (10 ml) and the original solution of magnesium (2 ml), the mixture was mixed to obtain a semiconductor ink for inkjet printing. The molar ratio of Cu to Mg in the ink was 5:1. This ink had a composition 29MgO·71Cu2Oh, and why�WMD referred to as "29MgO·71Cu 2O semiconductor ink".

"The formation of the active layer"

29MgO·71Cu2O semiconductor ink is applied using an inkjet pictoimage device to desired areas of the substrate, where after that the electrodes were formed of source and drain. The resulting substrate coated ink was dried for 1 hour at a temperature of 120°C and calcined for 3 hours at 250°C, being irradiated at the same time excimer lamp (wavelength:222 nm) for the formation of 29MgO·71Cu2O film having a thickness of 44 nm.

Finally, the resulting product was annealed for 1 hour at a temperature of 300°C to obtain a field-effect transistor.

Figure 36 presents the micrograph of part of the channel of the FET. The interval between the source electrode 23 and drain electrode 24 is called the channel length, which in this case is 50 μm. Channel width is determined by the width of the active layer 22 that is applied by a vertical line. In this photomicrograph, field-effect transistor has a channel width of 36 μm.

"Appraisal"

First, in order to estimate the electrical resistivity of the obtained semiconductor film 29MgO·71Cu2O, the current value between the source electrode and the drain electrode was measured under the following conditions: 1) voltage to the gate electrode is not applied�; 2) the voltage of 20 V was applied to the source electrode; and 3) the drain electrode was grounded. It is established that the current value was $ 2.85 mA. Volume resistivity semiconductor films 29MgO·71Cu2O was calculated from the above current value, and it was 22.2 Ω. On the other hand was computed volume resistivity 29MgO·71Cu2O semiconductor films of example 3, which was 31.1 Ω. The finished semiconductor film 29MgO·71Cu2O example 3 were confirmed to have an electrical resistivity similar to that of example 52, regardless of the type of raw ink (solvent, Cu-containing compounds and Mg-containing compound and method of applying ink.

Then, the field-effect transistor of example 52 was calculated transfer characteristics (Vds=-20 V) and, as found, it was atypical of the transistor, which shows an excellent property of a transistor is p-type. In example 51 semiconductor film 29MgO·71Cu2O formed by the method of depositing a layer by centrifugation before received the boundary contour method, wet etching. Meanwhile, in example 52 semiconductor film 29MgO·71Cu2O formed only on a desired region of the inkjet method, which eliminated the subsequent stage of copying, and thus, did Bo�it easy fabrication of a field effect transistor.

"Industrial applicability"

Oxide p-type present invention can possess a lovely property, i.e., sufficient conductivity, which can be obtained at a relatively low temperature and in practical terms, the specific conductivity can be controlled by adjusting the ratio of its composition. Therefore, the oxide of the p-type may accordingly be used for the active layer of the semiconductor device, such as a diode and a field effect transistor.

List of reference symbols

1 - basis

2 - cathode

3 is a semiconductor layer of n-type

4 is a semiconductor layer of p-type

5 - anode

6 - p-n junction diode

10 - field-effect transistor

20 - field-effect transistor

21 - substrate

22 is an active layer

23 - electrode of the source

24 - electrode flow

25 - insulating layer shutter

26 - shutter electrode

30 - condenser

40 - FET

302, 302' - a display device

310 - display

312 - negative electrode

314 - positive electrode

320, 320' - managing schema

340 - organic thin-film EL layer

342 - layer electron transport

344 - light-emitting layer

346 - layer transfer holes

350 - organic EL device

360 - interlayer insulating film

361 - condenser

370 - liquid crystal device

400 - display of the control equipment

402 - processing device, the video information

404 - scanning line drive circuit

406 - bus data transfer control circuit

1. The oxide is p-type, where the oxide is p-type is amorphous and is represented by the following compositional formula: Hao·yCu2O, where x denotes the proportion of moles of AO and y denotes the mole fraction of Cu2O, and x and y satisfy the following conditions: 0≤x < 100 and x+y=100, and A is any one of Mg, CA, Sr and BA, or a mixture containing at least two elements selected from the group consisting of Mg, CA, Sr and BA.

2. Composition for producing oxide p-type, containing:
solvent;
Cu-containing compound; and
compound containing at least one element selected from the group consisting of Mg, CA, Sr and BA,
where the composition for oxide p-type according to claim 1.

3. A method of producing oxide of the p-type according to claim 1, including:
applying the composition to the substrate and
heat treatment of the composition after application,
where the composition includes a solvent, a Cu-containing compound and a compound containing at least one element selected from the group consisting of Mg, CA, Sr and BA.

4. A semiconductor device comprising an active layer where the active layer includes an oxide of the p-type according to claim 1.

5. A semiconductor device according to claim 4, further blends�: the first electrode and the second electrode,
where the semiconductor device is a diode in which the active layer is formed between the first electrode and the second electrode.

6. A semiconductor device according to claim 4, further comprising:
a gate electrode arranged to supply the voltage of the gate;
the source electrode and the drain electrode, which is arranged for discharging electric current; and
the insulation layer of the gate
where the semiconductor device is a field effect transistor where the active layer is formed between the source electrode and the drain electrode and the insulating layer stopper is formed between the gate electrode and the active layer.

7. A display device, including:
device light control, designed to control the light output based on the control signal, and
a control circuit containing a semiconductor device according to claim 4 and arranged to drive movement of the device light control.

8. The display device according to claim 7, where the control device includes light organic electroluminescent device or an electrochromic device.

9. The display device according to claim 7, where the control device includes light liquid crystal device, an electrophoretic device, or electromotive device.

10. Apparatus, reproducing the image on the screen�, including:
a variety of display devices according to claim 7, which are arranged in a matrix form and each includes a field effect transistor;
many of the transactions that are linked to individual supply of gate voltage, and the voltage signal to field effect transistors of the display devices; and
the equipment controlling the display, arranged to individually control the gate voltage and the signal voltage in field effect transistors using schemes based on the image data,
where the apparatus of the playback image on the screen is arranged to display an image based on the image data.

11. Comprising:
apparatus that reproduces an image according to claim 10, and apparatus generating image data, which produces image data based on image information to be shown, and outputs the video data to the instrument, reproducing the image on the screen.



 

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6 cl, 1 tbl, 6 ex

FIELD: physics.

SUBSTANCE: invention relates to protein photoelectric converters. The non-wettable all-solid protein photoelectric converter is configured to be operated without existence of a liquid such as water inside and outside of the device and has a structure in which a solid protein layer consisting of an electron transfer protein is sandwiched between a first electrode and a second electrode, wherein the solid protein layer is directly immobilised on both electrodes.

EFFECT: invention enables to make a non-wettable, all-solid protein photoelectric converter with improved characteristics.

11 cl, 21 dwg

FIELD: chemistry.

SUBSTANCE: invention relates to application of conformal coating on electronic device and comprises the steps that follow. (A) Heating of conformal coating bond including parylene bond of conformal coating for components sensitive to moisture for formation of gaseous monomer of conformal coating compound. (B) Integration of boron nitride with gaseous monomers. (C) Brining the electronic device surface in contact with gaseous monomers and boron nitride at conditions whereat conformal coating is formed on, at least a part of the surface including the compound of conformal coating and nitride boron to add water resistance to said surface.

EFFECT: expanded applications.

7 cl, 3 dwg, 1 tbl

FIELD: physics.

SUBSTANCE: described is an optoelectronic device, having a light-emitting field-effect transistor (LEFET) with an active layer of an organic semiconductor and a waveguide formed in the channel of the LEFET. The active layer is on top of the waveguide and the source and drain electrodes. The crest of the waveguide contains material having a higher refraction index than the organic semiconductor. The LEFET is biased to control the recombination position of charge carriers of opposite polarity in the channel. The crest is levelled with the recombination position such that light enters the crest of the waveguide in a controlled manner.

EFFECT: improved efficiency of inputting light into a waveguide.

30 cl, 14 dwg

FIELD: electricity.

SUBSTANCE: invention is related to an electroluminescent device (10) comprising an organic light-emitting layer (50) and a sealing component (70) with closed circuit which seals a lateral side of a stack (59) of electroluminescent layers for the purpose of electrical connection of an opposing electrode (40) to the power supply source. The invention is also related to the usage method of such device with the adjoining circuit as a sealing component and a coated substrate to be used in this device.

EFFECT: the invention provides electroluminescent device that excludes formation of a gap between the substrate and its rear side and is fit for easy and safe short-circuiting connection.

12 cl, 5 dwg

FIELD: radio engineering, communication.

SUBSTANCE: invention relates to microwave monolithic integrated circuits and is intended for use as protective circuits, e.g. in devices containing low-noise amplifiers. The reflection-type ultra-wideband microwave power limiter according to the invention is designed not as a low-pass filter, but as a section of a coplanar transmission line (or a coplanar transmission line with a grounding plane), linked to planar distribution pin-structures connected antiparallel to corresponding conductors of the coplanar line (or coplanar transmission line with a grounding plane).

EFFECT: high value of the upper operating frequency and higher peak input power of the limiter.

1 dwg

FIELD: electricity.

SUBSTANCE: in design of a crystal of an arsenide-gallium diode in epitaxial anode and cathode areas of a structure the profile of concentration of an alloying admixture is distinct stepped with sharp-smooth-sharp decrease and increase of differential concentration of donor and acceptor admixtures. The crystal of the ultrafast powerful high-voltage arsenide-gallium diode comprises a highly alloyed single-crystal substrate of the first type of conductivity with concentration of the alloying admixture of at least 1019 cm-3; the epitaxial layer of the first type of conductivity with areas of sharp, smooth, sharp reduction of differential concentration of donor and acceptor admixtures from the level of concentration in a substrate of 1019 cm-3 to less than 1011 cm-3; the epitaxial layer with differential concentration of donor and acceptor admixtures of 1011 cm-3; the epitaxial layer of the second type of conductivity with areas with sharp, smooth, sharp increase of differential concentration of donor and acceptor admixtures from 1011 cm-3 to 1018 cm-3 and higher.

EFFECT: improved dynamic properties, expanded range of working voltages, increased density of currents, higher thermodynamic resistance of high-voltage ultrafast arsenide-gallium diodes.

2 cl, 1 dwg

FIELD: electricity.

SUBSTANCE: high-power UHF field transistor contains a semiconductor substrate with a structure of layers designed in the form of a direct sequence of a semi-insulating layer, a layer of n+ type conductivity, a stop layer, a buffer layer and an active layer; the thickness of the semi-insulating and the buffer layers is at least 30.0 and 1.0-20.0 mcm respectively; a part of the metallised hole for the common source electrode grounding, on the semiconductor substrate face side and at a depth equal to the sum total of the active, buffer and stop layers thicknesses, is designed as having a metallised bottom while the other part of the metallised hole for the common source electrode grounding, on the semiconductor substrate reverse side and at a depth equal to the sum total of the semi-insulating and the n+ type conductance layers thicknesses, is designed as blind in the form of a blanket layer of a highly thermally and electrically conductive material; the said parts of the metallised hole are completely or partly overlapped within the horizontal plane of their point of contact, asymmetrically towards the common drain electrode relative to the vertical axis of the metallised hole with cross section size equal to that of the field transistor active area elements topology; the integrated heat sink is simultaneously represented by the blanket layer of the highly thermally and electrically conductive material of the other part of the metallised hole.

EFFECT: increased output capacity and amplification factor, decreased weight and dimension characteristics, reduced cost, increased yield ratio and, accordingly, performance.

4 cl, 1 dwg, 1 tbl

FIELD: electricity.

SUBSTANCE: high-performance UHF field transistor with Schottky barrier includes semi-insulating gallium arsenide substrate with active layer, rake out of at least one alternating sequence of single source, gate and drain electrodes. Semi-insulating gallium arsenide areas are positioned between single source and drain electrode couples, and channels with grooves carrying single gate electrodes are made inside single source and drain electrode couples. Single gate electrodes are positioned asymmetrically towards single source electrodes, same-name single source, gate and drain electrodes are connected electrically. According to invention, field transistor with Schottky barrier includes additionally 0.15-0.25 mcm thick dielectric layer of low inductive capacity in the channel of each single source and drain electrode couple at single drain electrode side, and each single gate electrode is long at top and short at bottom adjoining channel groove surface, compared to the side surface of single drain electrode, with different cross-section size towards single source electrode. Cross-section size of long top part exceeds cross-section size of short bottom part by 0.5-0.8 mcm, with height of the latter equal to additional dielectric layer thickness. At one side, two additional dielectric layer surfaces mutually perpendicular against layer depth adjoin directly vertical surface of short bottom part and larger horizontal surface of long top part of single gate electrode respectively along the electrode width, and at the opposite side the same surfaces are positioned either at one level with the edge of long top part of single gate electrode or overlap single source electrode channel not more than for 4 mcm from that edge.

EFFECT: increased output power, power amplification coefficient and efficiency.

4 cl, 2 dwg, 1 tbl, 7 ex

FIELD: physics; computer engineering.

SUBSTANCE: invention relates to computer engineering and integrated electronics, more specifically to VLSI logical circuits. The integrated inverter circuit includes third and fourth channel regions with intrinsic conduction, additional ALGaAs regions of first and second conduction type, which form a control p-n junction, an additional metallic input bus, additional output regions of first and second conduction types, an additional output metallic bus, amorphisation regions, where the channel regions for a type II superlattice.

EFFECT: faster operation and smaller occupied area.

7 dwg

FIELD: computer engineering and integrated electronics.

SUBSTANCE: proposed integrated logic NOT gate depending for its operation on tunnel effect with paraphase outputs makes use of charge carrier tunneling effect between regions of first main and first additional channels separated by AlGaAs region of first tunnel barrier and between regions of second main and second additional channels separated by AlGaAs region of second tunnel barrier; use is also made of two input buses and additional power and zero potential regions, spacers, and additional AlGaAs regions of first and second polarities of conductivity. This provides for changing state of proposed integrated logic NOT gate from logic zero to logic one and vice versa under impact of input control voltages within time interval dependent on sluggishness of charge carrier drift and tunneling processes through AlGaAs regions of first and second tunnel barriers and independent of charge carrier transit time in channel GaAs regions as total number of charge carriers in channel separated by tunnel barrier regions in the course of change-over of integrated logic NOT gate does not actually change.

EFFECT: enhanced speed.

1 cl, 4 dwg

The invention relates to the field of computational engineering and integrated electronics, and more particularly to integral field transistor structures VLSI

The invention relates to electronic devices, and in particular to semiconductor transistors

FIELD: electricity.

SUBSTANCE: in a tunnel field effect transistor with an insulated gate containing electrodes of source and drain made of multilayer graphene and located at an insulating substrate in the same plane, and also the gate made of a conducting material and located above the areas of source, tunnel junction and drain, electrodes of source and drain are oriented towards each other crystallographically by an even edge of a zigzag type and separated by a vacuum barrier transparent for charge carriers.

EFFECT: invention expands the inventory of tunnel transistor nanodevices; this device alongside its pronounced switching property has on the current-voltage curve of the source and drain electrodes the area with a negative differential resistance, which allows its functioning as the Gunn diode; the device requires lower voltage at the gate.

2 dwg

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