Fabrication of contact-barrier metallisation

FIELD: process engineering.

SUBSTANCE: invention relates to semiconductor technology, particularly, to production of semiconductor structures of contact-barrier metallisation of instrument. Contact-barrier metallisation is produced by series application of W (15% Ti) 0.17-0.19 mcm deep film at cross-field spraying of alloyed target at the rate of 2.5 E/s and Al (1.5% Si) 0.35-0.45 mcm deep film with subsequent thermal annealing at 450-480°C for 30 minutes in the medium of nitrogen.

EFFECT: decreased density of defects, perfected structure parameters, higher quality and yield.

1 tbl

 

The invention relates to the field of production technology of semiconductor devices, in particular to the manufacture of the contact barrier metallization of the device.

The known method [application 2133964 Japan, MKI H01L 29/46] of manufacturing a semiconductor device by forming a TiN layer, which serves as a barrier layer, the addition of 1-10 at.% carbon C. This additive TiN protects it from the appearance of mechanical stresses and cracking after heat treatments. In such devices, the presence of the ligature leads to an increase in resistance and deterioration of the characteristics of the instrument.

The closest is a method of manufacturing a contact barrier metallization layer-forming titanium silicide on Si-wafer [U.S. patent No. 5043300, MKI H01L 21/283] by plasma cleaning of silicon wafers, followed by vacuum evaporation Ti layer in the atmosphere not containing oxygen, and annealing in the environment of N2first at 500-700°C in 20-60 seconds for the formation of a layer of titanium silicide, and then annealing at a temperature of 800-900°C for the formation of a stable phase of titanium silicide.

The disadvantages of this method are:

- increased leakage currents;

- high defectiveness;

- the formation of mechanical stresses.

The problem solved by the invention: a decrease in the density of defects, leakage currents, providing the technological�axis, improvement of the parameters of the devices, improving the quality and increasing percentage of the yield.

The problem is solved in that the contact barrier metallization is formed by the sequential deposition of the W film (15% Ti) with a thickness of 0.17 and 0.19 μm magnetron sputtering alloy target at the rate of 2.5 Å/s and the Al film (1,5% Si) with a thickness of 0.35 to 0.45 μm, followed by thermal annealing at a temperature of 450-480°C for 30 min in a nitrogen atmosphere.

Technology method is as follows: on a silicon substrate with an insulating layer of silicon oxide with a thickness of 0.6 μm by the method of magnetron sputtering alloy target on installing inflicted W film (15% Ti) with a thickness of 0.17 and 0.19 μm at the rate of 2.5 Å/s and the Al film (1,5% Si) with a thickness of 0.35 to 0.45 μm, then the resulting composition was annealed at a temperature of 450-480°C for 30 min in a nitrogen atmosphere.

According to the proposed method were investigated and manufactured semiconductor structure. The results of processing are presented in the table.

Table
The parameters of semiconductor structures fabricated using standard technologyThe parameters of semiconductor structures manufactured according to the proposed technology
The density of defects cm -2The leakage current, Ileak∗1013AThe defect density, cm-2The leakage current, Ileak∗1013A
The 2.5∗1055,84,4∗1030,4
A 2.8∗1053,14,6∗1030,6
The 2.7∗1051,24,5∗1030,7
2,2∗1052,54,1∗1030,25
The 2.9∗1058,44,1∗1030,21
2,1∗1052,4The 4.7∗1030,2
The 2.6∗1051,14,4∗1030,55
2,3∗1059,74,2∗1030,38
2,8∗10sup> 58,94,6∗1030,51
The 2.4∗1051,84,3∗1030,35
The 2.5∗1056,84,4∗1030,41
2,1∗1055,44,9∗1030,23
2,3∗1055,74,1∗1030,34

Experimental studies have shown that the yield of semiconductor structures on party plates, formed in the optimal mode, increased by 15.5%.

Technical result: reduced leakage currents, reducing the density of defects, ensuring manufacturability, improved options, improved reliability and increased yield of good devices.

The stability of the parameters throughout the operating temperature range was normal and met the requirements.

A method of manufacturing a contact barrier metallization, including the processes of sputtering and annealing in a nitrogen atmosphere, characterized in that the contact-�arenou metallization is formed by sequential deposition of the W film (15% Ti) with a thickness of 0.17 and 0.19 μm magnetron sputtering alloy target at the rate of 2.5 Å/s and the Al film (1,5% Si) with a thickness of 0.35 to 0.45 μm with subsequent thermal annealing at a temperature of 450-480°C for 30 min.



 

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