Method to apply coating for passivation of silicon plates

FIELD: electricity.

SUBSTANCE: invention relates to the field of high-voltage equipment, to power semiconductor devices, and, in particular, to the method and device for single-stage double-sided application of a coating layer from an amorphous hydrogenated carbon onto the surface of the silicon plate, and also to the holder of the substrate for support of the silicon plate. A silicon plate (4) is used, containing the first large side with the first slant along the edge of the first large side and the second large side with the central section and the second slant along the edge of the second large side surrounding the central section. Besides, the second large side is opposite to the first large side, the silicon plate (4) is placed on the support (31) for the substrate of the substrate holder (3). The support (31) for the substrate is performed with the possibility to ensure contact of only the central section of the second large side of the plate (4) with the support (31) for the substrate. Then the holder of the substrate with the plate (4) is placed into a reaction chamber (8) of a plasma reactor, in which the first and second slants are simultaneously exposed to plasma (6), to produce the deposited layer (7) from the amorphous hydrogenated carbon.

EFFECT: possibility is provided for single-stage double-sided application of a passivating layer, providing for electric inactivity of a section of a semiconductor plate.

17 cl, 5 dwg

 

The basis for the creation of inventions

The present invention relates generally to the field of high voltage engineering, power semiconductor devices and, in particular, to a method and apparatus for one-stage bilateral applying a layer of electrical passivation on silicon wafers for power semiconductor devices.

Typically, bipolar power semiconductor devices such as diodes, thyristors, the thyristors with a switched gate (GTO) and lockable thyristors (GCT), made from silicon wafers. After a silicon wafer subjected to various processes - implantation, diffusion, photolithography, and metallization, cut into round disks and high-voltage blocking p-n junction(s) polished negative or positive slant. These bevels usually must be protected by a layer of electrical passivation. One of the commonly used passivating material is amorphous hydrogenated carbon (a-C:H, also called diamond-like carbon), which is usually applied by the method of plasma chemical vapour deposition (PECVD) inside the plasma reactor with parallel plates, but which may also in General be applied in a PECVD-reactors with different geometries, or ion beam deposition, cathodic arc deposition with OSU pulsed laser or chemical vapour deposition, low pressure.

A simplified picture of the conventional PECVD process is shown in figure 1. A silicon wafer is in contact with the second lower electrode inside the reaction chamber through the substrate holder. Hydrocarbon gas is a source reagent (e.g., methane, acetylene) is supplied to the reaction chamber of the plasma reactor through the holes in the first upper electrode, Insulza radiofrequency radiation and forms the bulk plasma. Boundary of the plasma layer is the space in which plasma ions are accelerated towards the substrate and substrate holder due to the bias voltage direct current between two electrodes.

In the usual process of a silicon wafer is placed in the recess in the aluminum holder of the substrate, as shown in figure 1. This substrate holder not only plays the role of a mechanical holder for silicon wafer (substrate), but also provides thermal and electrical contact between the disc forcibly cooled with a second (lower) electrode in the reaction chamber. The bevel on the silicon plate facing the first (upper) electrode is exposed to plasma deposition of a-C:H coating, while the rest of the upper surface of a silicon wafer covered with aluminum mask. Forced cooling of the silicon wafer during the process Nan is placed coverage is necessary, in order to avoid the formation of passivating layers with poor electrical properties. Thermal decomposition of a-C:H described in J. Robertson, “Diamond-like amorphous carbon (Diamond-like amorphous carbon), Materials Science and Engineering: R: Reports, 37, (2002) 129.

Silicon wafers with two high-voltage blocking p-n junctions (e.g., thyristor) can have one negative bevel performed on each of the opposite sides. Using the above method for one-stage process covering a-C:H is deposited only on the top bevel. As a result, you must manually turning a silicon wafer and the second stage of the process of applying a-C:H coatings. Because the bevel covered in the second stage of the process, during the first stage of the process is placed in the recess and facing down in insecure and very vulnerable state, there is a great risk that the bevel will be contaminated, resulting in deterioration of the locking function.

Disclosure of inventions

The challenge which seeks the invention is a method and device for two-sided coating as a layer of electrical passivation, such as uniform a-C:H layer on both sides of the plate. An additional objective is the improvement of the existing devices for coating, in order to ensure the ecity the possibility of conducting such a process of applying a layer of electrical passivation on the semiconductor wafer.

Problems are solved by a method based on plasma-chemical vapor deposition (PECVP), in combination with improved device for fixing the substrate. According to the invention, the method of two-sided deposition of the coating layer of amorphous hydrogenated carbon on the surface of the silicon wafer includes using a silicon wafer containing the first major side of the first bevel along the edge of the first major side and a second major side with a Central portion and a second bevel on the edge of the second great side surrounding the Central area, and the second major side opposite the first major side, placing a silicon wafer on the support substrate holder of the substrate, and a support for the substrate is performed with the possibility of making contact only the Central section of the second large face plate with a support for a substrate; at this place the holder substrate plate in the reaction chamber of the plasma reactor, in which the first and second bevels simultaneously affected by the plasma, to obtain a deposited layer of amorphous hydrogenated carbon.

Due to the elevated support surface of the substrate on two opposite sides of a silicon wafer exposed to plasma and, therefore, they are covered pestiviruses layer. Passivating layer PLA is Tina provides electrical inactivity of the site, covered pestiviruses layer (passivating layer according to the invention is not completely electrically inactive, partially it is conductive).

The second object of the invention is a substrate holder for supporting a silicon wafer with double-sided deposition of the coating layer of amorphous hydrogenated carbon on the surface of the silicon wafer in the chamber of the plasma reactor; the holder comprises a support for a substrate to support a silicon wafer containing the first major side of the first bevel along the edge of the first major side and a second major side with a Central portion and a second bevel on the edge of the second great side surrounding the Central area, while a second side is opposite the first major side, and a support for a substrate made with the possibility of placing it on her plate so that in contact with the support for the substrate is only the Central part of the second large face plate.

Another object of the invention is a device for double-sided deposition of the coating layer of amorphous hydrogenated carbon on the surface of a silicon wafer containing two parallel flat electrodes within the reaction chamber of the plasma reactor, the above substrate holder at least the La one plate, placed on the support substrate, and the substrate holder is placed on one of the electrodes.

Technical result achieved in the implementation of the invention, consists in obtaining pestiviruses layer on two sides of the plate in the single-stage coating process.

In order to avoid the deterioration of heat transfer that can occur due to the increased distance between the silicon plate, located on the elevated support surface of the substrate holder of the substrate, and forcibly cooled bottom electrode, the invention features the combination of a new design of the holder substrate with improved cooling mechanism of a silicon wafer. This provides sufficient heat dissipation, which is crucial for the coating process, since the temperature of the substrate above about 200°C possible precipitation of more graphite-like carbon layers with poor electrical properties.

In the described invention emphasizes the importance pedestalling holder substrate, replacing the motherboard. In this case, the effects of plasma exposed to both sides of a silicon wafer. However, a uniform coating is not simple, especially for the lower bevel, which is adjacent to the lower electrode. Since DL is the deposition of uniform a-C:H layers, you need a uniform velocity distribution of the plasma flow and a uniform electric field, the mushroom design of raised supports for the substrate (for example, concave, having the shape of an inverted truncated cone, etc) is more preferable in comparison with a purely cylindrical structures.

Brief description of drawings

A more complete understanding of the invention can be obtained by introducing the following detailed description in conjunction with the accompanying drawings, of which:

figure 1 - schematic representation of the Assembly with silicon plate inside the reactor with parallel plates in the process of one-sided coating the current level of technology;

figure 2 - schematic representation of the Assembly with a silicon plate on an elevated support surface of the substrate according to the invention inside the reactor with parallel plates;

figure 3 is a more detailed Assembly 2 with the first embodiment (cylindrical) raised a support for a substrate according to the invention;

4 is a more detailed Assembly 2 with the second embodiment (truncated cone) raised a support for a substrate according to the invention; and

5 is a schematic representation of the Assembly with stacked stacked silicon wafers on raised supports for the substrate according to the invention inside the reactor with parallel plates.

Description prefer is lnyh options implementation

Figure 1 gives a schematic representation of a reactor with parallel plates used in the PECVD process current level of technology with a pair of parallel plate electrodes 1 and 2, the reaction chamber 8, the bulk plasma 6, the boundary of the plasma layer 7, the silicon plate 4, the mask 5 and the substrate holder 3 with the recess 33. As the activation method to ensure a-C:H deposition on the silicon wafer using electron energy (plasma). Hydrocarbon gas is a source reagent (e.g., methane, acetylene) is supplied to the reaction chamber 8 through the openings 11 in the upper electrode 1. He Insulza under the influence of radio frequencies and forms the bulk plasma 6. Edge plasma layer 7 is the space in the reaction chamber 8, in which plasma ions get accelerated in the direction of a silicon wafer or substrate holder due to the bias voltage DC, which is attached between the two electrodes 1 and 2. The substrate is a silicon wafer 4 is placed in the recess 33 on the substrate holder 3. This substrate holder 3 not only plays the role of a mechanical holder of the substrate, but also provides thermal and electrical contact between the silicon plate and the lower electrode 2 in the reaction chamber 8 of the plasma reactor. One of the bevels on ramnivas plate, which must be passivated facing the upper electrode 1. This bevel is exposed to ensuring the formation of a-C:H coatings plasma 6 and/or 7. The plots on the upper surface of a silicon wafer, which are not intended for passivation, are covered by the mask 5. In an existing method within one stage of the process a-C:H coating is formed only on the top bevel. As a result, a silicon wafer with two high-voltage blocking p-n-transitions, having one bevel on each of the opposite sides (e.g., thyristor)required the use of hand-rolling a silicon wafer and the second stage of deposition of a-C:H coatings. As noted above, the bevel covered in the second stage of the process, during the first stage of the process is facing down and placed in the recess 33 in an unprotected and, therefore, very vulnerable state), as a result there is a high risk of contamination and, consequently, deterioration of the locking action.

Figure 2 presents a schematic drawing of an improved version of the reactor with parallel plates used in one-stage bilateral PECVD-the method of the invention. This device differs from the device used in figure 1, in that it used the newly developed substrate holder 3. This plate is mainly made of electro - and heat-conductive material, such as aluminum or any other metal. In order to eliminate the limitation on unilateral application of a-C:H coating, the silicon wafer (substrate) in this case is not placed inside the depression in the substrate holder 3. Instead, the silicon wafer is put up "mushroom", or "pedestaling" ledge, called the proposal raised a support 31 to the substrate. The plate is placed on a raised support 31 to the substrate with a contact surface having a structure in which the second face side of the plate is in contact with the upright support 31 to the substrate, and the second bevel remain uncoated and covered or enclosed in the holder substrate 31.

Specified elevated bearing 31 to the substrate is located above the substrate holder 3, as either part of the substrate holder 3, or perhaps made as separate parts. This substrate holder not only plays the role of a mechanical holder for silicon wafers, but also provides thermal and electrical contact between the silicon plate and the lower electrode 2 in the reaction chamber 8. In the lifting position of the silicon wafer, the plasma flow, which as before is generated from gas - source elements supplied to the reaction chamber 8 through consisting of parallel plates e is ectrum 1, no longer is limited to the upper bevels 41 on the silicon wafer substrate. Application of a-C:H coatings is held simultaneously bevels on the top 41 and bottom bevels 42 silicon wafer. Not intended for coating areas of the upper surface of a silicon wafer, as before, cover the mask 5. To indirectly limit the temperature of the silicon wafer to below 200°C, the lower electrode 2 is subjected to forced cooling, for example using device 22 water cooling, operating at a temperature of about 15-20°C.

Figure 3 presents a more detailed view of the first variant implementation of the proposed invention "pedestalling" elevated support 31 to the substrate holder 3, the substrate is placed above the plate, for example a silicon wafer. Ions from the bulk plasma 6 acquires the acceleration in the direction of the silicon wafer 4 in the boundary layer 7 plasma near the surface, which are electrically connected with the lower electrode 2. Uniform deposition of a-C:H coatings on the silicon wafer 4 in different areas of A and B is very difficult, especially for the lower bevel on a silicon wafer. The reason for this is that for the deposition of uniform a-C:H layers required uniformly distributed speed plasma flows and homogeneous electric on who I am. However, except in the case of extremely small thickness of the boundary layer plasma density of the plasma flow, as well as accelerating electric field can be different for regions A and B, resulting in multiple heterogeneous application in these areas a-C:H coatings. Such heterogeneity can to some extent be compensated by a slight adjustment of process parameters, since the thickness of the boundary layer of the plasma is determined by the square root of the bias voltage DC, which can be reduced to a minimum of approximately 500 B. the Minimum bias voltage DC for some reactors may vary, as it depends on many different parameters.

4 shows a more detailed view of the second variant implementation of the substrate holder 3 according to the invention, in particular a raised bearing 31 to the substrate. Instead of using simple cylindrical projection as a raised support 31 to the substrate holder 3 of the substrate an additional circular cutout at the base makes the cross-section of the raised bearing 31 to the substrate concave. Taking into account this type of geometric profile such elevated standoff for the substrate is called "mushroom". Possible geometric (mushroom) profiles cut not ogran who receive straight lines. In principle can be used any geometric profile of the upright support 31 to the substrate, for example concave, having the shape of an inverted truncated cone, and so on, provided that the flow velocity of the plasma is high enough and electric/magnetic fields on the lower slopes of a silicon wafer such that they provide a more uniform speed coating. In these cases, facilitates uniform deposition of a-C:H coatings on the silicon wafer 4 for different areas A and B. the Remaining possible heterogeneity can be as previously offset by a slight adjustment of process parameters, since the thickness of the boundary layer of the plasma is determined by the square root of the bias voltage DC, which can be reduced to a minimum of approximately 500 B. Improved and more direct cooling of the silicon wafer can be achieved by forced cooling using the cooling device 32, which is located in or near the substrate holder 3 or near upright support 31 to the substrate holder of the substrate. As the cooling device may be used water cooling working, for example, at a temperature of about 15-20°C. Such optimized cooling strategy in situ in combination with possible operatingprocedures cooling the silicon wafer and/or substrate holder causes the maximum process temperature below 200°C. To further reduce the temperature of the silicon wafer in the coating process, a mask that covers the upper surface of the silicon wafer can be placed cooling medium. As mentioned above, the coating process is fundamentally important satisfactory dissipation of heat, as the temperature of the silicon wafer above 200°C may cause precipitation of graphite-like carbon layers with poor electrical properties.

To appropriately align, i.e. to align concentrically, the silicon wafer 4, and a raised support 31 to the substrate holder 3 of the substrate prior to placing the Assembly in a reaction chamber of the plasma reactor can be used for levelling or centering means.

If desired, as shown schematically in figure 5, at the top of one silicon wafer 4, which is at an elevated support surface 31 to the substrate, can be set by the stack additional plate 4'. In order to ensure uniform application of a-C:H coatings on adjacent silicon wafers, between adjacent silicon plates 4 and 4' of the stack is placed in a raised bearing 31' to the substrate. If desired, this additional raised a support for the substrate may not be installed, resulting in two kremna the s plates are stacked back to back, and each of them will have only one high-voltage blocking p-n junction, as in the case of diodes, GTO and GCT, and will need to asseverate only one bevel.

If desired, the cooling unit can be placed inside additional raised supports 31' to the substrate and/or mask 5, which is located on top of the pile. In some cases, between raised additional supports 31' for the substrate and one or several or all parts, which are electrically connected with the lower electrode 2, i.e. upright support 31 to the substrate, the substrate holder 3 and the lower electrode 2 may be installed conductive connection 34.

The list of referenced symbols

1, 2 electrodes

22 chiller

3, the substrate holder

31, 31' raised a support for a substrate

32 cooler

33 deepening

34 conductive connection

4,4' Si-disc/pad

41 upper slope

42 lower slope

5 mask

6 bulk plasma

7 boundary layer plasma

8 reaction chamber of the plasma reactor

1. The way double-sided deposition layer (7) coating of hydrogenated amorphous carbon on the surface of a silicon wafer (4), including the use of a silicon wafer (4), containing the first major side of the first bevel along the edge of the first major side and the second largest party is the Central section and the second bevel on the edge of the second major party, surrounding the Central area, and the second major side opposite the first major side, placing a silicon wafer (4) on the support (31) of the substrate holder (3) of the substrate, and a support (31) for the substrate is performed with the possibility of making contact only the Central section of the second large face plate (4) with a support (31) for the substrate, with place holder backing plate (4) in the reaction chamber (8) plasma reactor, in which the first and second bevels simultaneously affected by the plasma (6), to obtain a deposited layer (7) of amorphous hydrogenated carbon.

2. The method according to claim 1, in which the temperature of the plate in the deposition process support below 200°C.

3. The method according to claim 1, wherein the plate (4) is cooled before being placed on the holder (3) substrate, or the holder (3) the substrate is cooled before being placed in the reaction chamber (8), or plate (4) and the holder (3) the substrate is cooled before being placed in the reaction chamber (8).

4. The method according to claim 1, in which the reaction chamber (8) comprises two parallel flat electrodes (1, 2), plate (4) forcibly cooled in the deposition process by using a tool (22) cooling, located in the electrode (2) reaction chamber (8), or plate (4) forcibly cooled in the process of deposition of a layer by using (32) cooling time is EDINOGO in the holder (3) of the substrate or in the support (31) of the substrate holder (3) of the substrate.

5. The holder (3) a substrate for supporting a silicon wafer (4) the double-sided deposition layer (7) coating of hydrogenated amorphous carbon on the surface of a silicon wafer (4) in the chamber (8) plasma reactor, characterized in that it comprises a support (31) for a substrate for supporting a silicon wafer (4), containing the first major side of the first bevel along the edge of the first major side and a second major side with a Central portion and a second bevel on the edge of the second great side surrounding the Central area, while a second side is opposite the first big side, and bearing (31) for substrates made with the possibility of placing it on her plate (4) so that in contact with the support (31) of the substrate is only the Central part of the second large face plate (4).

6. The substrate holder according to claim 5, in which the bearing (31) of the substrate is cylindrical or bearing (31) of the substrate contains a plot of the surface on a plane surface, is arranged to accommodate the Central section of the plate, and the holder (3) the substrate has a sectional area decreasing with increasing distance from the plane surface, at least to some depth.

7. The substrate holder in PP. 5 or 6, which contains several supports (31) DL the substrate, each of which is designed to support plate (4).

8. The substrate holder in PP. 5 or 6, in which the bearing (31) of the substrate is a separate piece that is attached to the holder (3) of the substrate.

9. The substrate holder according to claim 5, which comprises a support (31) for substrates made with the possibility of hosting the first plate and the first plate of the stack is placed at least one additional plate.

10. The substrate holder according to claim 9, in which between adjacent plates (4, 4') of the stack is additional support (31') to the substrate, and the plates in each pair of adjacent plates are separated from one another by additional support (31') to the substrate.

11. The substrate holder of claim 10 in which the means (32) for cooling is located in the additional support (31') to the substrate.

12. The substrate holder in PP. 10 or 11, in which additional support (31') for the substrate and a support (31) for the substrate and/or the holder (3) of the substrate and/or electrode (2)supporting the holder (3) the substrate is made of conductive connection (34).

13. Device for double-sided deposition layer (7) coating of hydrogenated amorphous carbon on the surface of a silicon wafer (4) in the chamber (8) plasma reactor containing two parallel flat electrodes (1, 2) inside the reaction chamber (8), hold the l (3) substrate on PP. 5 or 6 at least one plate (4)placed on the support (31) for the substrate, and a holder (3) the substrate is placed on one of the electrodes (2).

14. The device according to item 13, containing means (22, 32) for cooling the cooling plate (4) in the process of deposition of the coating layer.

15. The device according to 14, in which means (22) cooling placed in the electrode (2)supporting the holder (3) of the substrate.

16. The device according to 14, in which means (32) cooling placed in the holder (3) of the substrate or in the support (31) of the substrate holder (3) or means (32) cooling performed in the mask (5), cover plate (4) on the surface facing the other electrode of the two flat electrodes (1).

17. The device of clause 15, which further means (32) cooling placed in the holder (3) of the substrate or in the support (31) of the substrate holder (3) or means (32) cooling performed in the mask (5), cover plate (4) on the surface facing the other electrode of the two flat electrodes (1).



 

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SUBSTANCE: metal strip contains a coating from carbon nanotubes and/or fullerenes soaked with metal chosen from the group consisting of Sn, Ni, Ag, Au, Pd, Cu, W or their alloys. Method for obtaining metal strip with the coating from carbon nanotubes and/or fullerenes and metal involves the following stages: a) application of diffusion barrier layer from transition metal Mo, Co, Fe/Ni, Cr, Ti, W or Ce onto a metal strip, b) application of a nucleation layer from metal salt containing metal chosen from the group Fe, the 9-th or the 10-th subgroup of the periodic table onto the diffusion barrier layer, c) introduction after stages a) and b) of treated metal strip to hydrocarbon atmosphere containing organic gaseous compounds, d) formation of carbon nanotubes and/or fullerenes on metal strip at temperature of 200°C to 1500°C, e) soaking of carbon nanotubes and/or fullerenes with metal chosen from the group containing Sn, Ni, Ag, Au, Pd, Cu, W or their alloys.

EFFECT: obtained metal strip with the coating has improved friction coefficient, increased transition resistance of a contact, increased resistance to friction corrosion, improved resistance to abrasion and increased ability to be deformed.

26 cl

FIELD: electricity.

SUBSTANCE: treatment is carried out in a vacuum chamber (1), in which a device is installed for generation of an electric low-voltage arc discharge (15) (LVAD), a carrier (7) of an item for reception and displacement of items (2) and at least one input (8) for an inertial and/or a reaction gas. The LVAD comprises a cathode (10) and an anode (13) electrically connected with a cathode via an arc generator. The item carrier (7) is electrically connected with a voltage shift generator (16). At least some surface of the anode (13) includes graphite lining.

EFFECT: when operating under high temperature, arc stability is provided, anode contamination is prevented in process of coating application.

41 cl, 7 dwg, 8 ex, 1 tbl

FIELD: nanotechnologies.

SUBSTANCE: invention relates to nanotechnologies and may be used to produce coatings from nanodiamonds, fullerenes and carbon nanotubes, operating under extreme conditions. Mixture with negative oxygen balance, made of carbon-containing substance and oxidant, is prepared in half-closed resonant detonation chamber 2, which is part of case 1. Carbon-containing substance is produced by ethylene bubbling in bubbler 7 through kerosene heated by means of electric heater 8 in the temperature range from 500 to 750°K. Carbon-containing substance is supplied into half-closed resonant detonation chamber 2 via porous end wall 4, and oxidant - via circular slot supersonic nozzle 3, formed by internal walls 5 and porous wall 4. Then mixture detonation is periodically initiated with frequency of 100-20000 Hz with the help of detonation initiator 6 in medium inertial towards carbon. After detonation, produced flow of carbon nanoclusters from detonation chamber 2 is sent to item 15 with processed surface 16, heated by source of radiant energy 17 to temperature of 550-1300 K. At the same time with the help of drive 13 and control system 14, processed surface 16 is periodically displaced with frequency of at least 1 Hz relative to vector of carbon nanoclusters flow speed in the range of angles from -45 to 45 degrees. Speed of detonation products cooling is maintained in the range from 5·103 to 2·106 K/s.

EFFECT: invention makes it possible to produce coats from carbon nanomaterials on surfaces of bulk products of complex shape and to do fine adjustment of coats parametres.

2 cl, 1 dwg

FIELD: physics.

SUBSTANCE: nitrogen is fed into a vacuum chamber in which there is an ion and a magnetron source until pressure increases to 0.02-0.08 Pa and igniting glow-discharge plasma. A direct voltage ion source for accelerating the stream of nitrogen ions is placed between the cathode and anode and the stream of nitrogen ions cleans the surface of a substrate which is fixed relative the stream of ions and whose temperature is not above 80°C. After cleaning, nitrogen supply is cut and a mixture of nitrogen N2 and toluene C7H8 vapour is fed into the vacuum chamber in ratio N2: C7H8 (90-70)%:(10-30)% until pressure of 0.02-0.05 Pa is established in the chamber and a 40-60 nm thick buffer adhesive layer is deposited, whose refraction index is equal to 1.5-1.8, while power of the ion source varies between 40 W and 60 W and bias voltage of the substrate varies from +50 V to +100 V. Toluene vapour is then fed into the ion source until 0.05-0.1 Pa pressure is achieved and a 80-120 nm thick protective layer is deposited, whose refraction index equals 2.1-2.4, while bias voltage of the substrate varies from -100 V to -200 V and power of the ion source varies from 60 W to 80 W. Vapour of liquid C6H12NSi2 is fed into the ion source until 0.1-0.2 Pa pressure is achieved and bias voltage ranging from -150 V to -250 V is applied across the substrate in order to deposit an anti-dirt layer of α-SiCxNy with thickness of 30-50 nm.

EFFECT: increased protection of organic substances from destructive and contaminating effects of the external medium.

2 cl, 6 dwg

FIELD: chemistry.

SUBSTANCE: invention relates to sealing porous substrates with pyrolytic carbon through chemical infiltration using an installation for realising said method. One or more porous substrates to be sealed are loaded into a furnace. A reaction gas phase is fed to the input of the furnace, where the said gas phase contains a pyrolytic carbon precursor reaction gas which contains at least one gaseous hydrocarbon CXHy, where x and y are positive integers and 1<x<6 and a carrier gas containing at least one gas selected from methane and inert gases. Flue gas is collected from the output of the furnace and at least a portion of the gas stream extracted from the flue gas and containing the pyrolytic carbon precursor reaction gas is recycled into the reaction gas phase fed into the furnace. At least the amount of pyrolytic carbon precursor gas and carrier gas contained in the gas stream extracted from the flue gas is measured. Depending on the measured amount, at least flow of the said gas stream recycled into the reaction gas phase, flow from external source of the pyrolytic carbon precursor gas and carrier gas injected into the reaction gas phase, and obtaining the required level of content of the pyrolytic carbon precursor gas in the reaction gas phase fed to the input of the furnace are controlled.

EFFECT: lower cost of sealing porous substrates with pyrolytic carbon.

13 cl, 4 dwg

FIELD: metallurgy.

SUBSTANCE: interior electrode for forming shielding film is installed inside plastic container with port and it supplies gaseous medium inside plastic container; it also supplies high frequency power to external electrode located outside plastic container, thus generating plasma of discharge on interior surface of plastic container and creating shielding film on interior surface of plastic container. The interior electrode for forming shielding film consists of a gas supplying tube containing gas propagation path and designed for supply of gas medium and of an insulating element screwed into the end part of the tube so, that it is flushed in it; the insulating element is equipped with a gas outlet communicating with the gas propagation path.

EFFECT: development of electrode for efficient forming of shielding film.

12 cl, 9 dwg

FIELD: chemistry.

SUBSTANCE: invention relates to devices for carbon nanotubes production. Device contains reaction furnace with unit for supplying and introducing of ethanol vapours, holder of padding with padding, which has catalytic surface, and heating element. Inside of reaction furnace placed is reaction chamber, which contains separable part, joint with drive of axial movement. Unit of ethanol vapours supply contains evaporating cell with ethanol, joint with ethanol vapours input. Heating element is placed inside reaction chamber in padding zone. Device is supplied with generator of particle flow, placed in reaction chamber, and made in form of at least one conductive net, connected to source of alternating or/and source of continued voltage. At least one conductive net is made of catalytic material. Reaction chamber is made of quartz ceramics. In evaporating cell heater and ethanol temperature measuring instrument are placed. Inlet of ethanol vapours is made of conductive material, and is connected to source of alternating or/and source of continued voltage. Inlet of ethanol vapours is made in form of two pipes, which are coaxially placed one in the other with ability to move relative each other.

EFFECT: increasing nanotubes quality and device reliability.

6 cl, 1 dwg

FIELD: chemistry.

SUBSTANCE: invention relates to microstructural technologies, namely to nanotechnology, in particular, to method of obtaining fibrous carbon nanomaterials which consist from carbon nano-tubes, by method of precipitation from gas phase. Reactor is filled with inert gas and its central part is heated. Then reaction mixture containing carbon source and ferrocene catalyst source is injected, which under impact of temperature turns into vapour. Vapour is kept in hot zone by ascending inert gas flow, source of padding for precipitation of catalyst nanoparticles and growth of carbon nano-tubes being introduced into reaction mixture. As padding source used are complexes of macrocyclic polyesters with salts of metals selected from line Ca, Ba, Sr, Y, Ce, which have temperature of decomposition lower than catalyst source, and serve as continuous source of padding.

EFFECT: synthesis of carbon nano-tubes is performed continuously, which results in increase of carbon nano-tubes output.

1 dwg, 3 ex

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