Production plant for material deposition and electrode for use

FIELD: electricity.

SUBSTANCE: bearing substrate has the first end and the second end located at the distance from each other. A contact seat is arranged on each end of the bearing substrate. The production plant comprises a body, which forms a chamber. At least one electrode is arranged as stretching through the body, besides, the electrode is at least partially arranged inside the chamber for connection with the contact seat. The electrode has outer surface that has an area of contact, which is adapted for contact with the contact seat. The contact area coating is arranged on the contact area of the outer surface of the electrode. The coating of the contact area has electric conductivity, at least, 9×106 Siemens/metre and corrosion resistance higher than of silver in the row of electrode potentials, which is based on using marine water of room temperature as electrolyte.

EFFECT: invention makes it possible to reduce problem of electrode clogging and to increase efficiency and service life of an electrode.

29 cl, 7 dwg

 

Related applications

[0001] This application claims priority to and all advantages of a preliminary application for U.S. patent No. 61/044703, which was filed on April 14, 2008.

The scope of the invention

[0002] This invention relates to a production installation. In particular, this invention relates to electrode used inside the production plant.

Background of the invention

[0003] Production plant for the deposition of material on the carrier substrate known in the art. Such production units include a housing that forms a chamber. Typically, the carrier substrate is almost U-shaped and has spaced apart first end and a second end. Usually at each end of the carrier substrate is a contact socket. Usually inside the chamber there are two or more electrode for receiving a corresponding pin socket located on the first end and the second end of the carrier substrate. The electrode also includes a contact area, which supports the contact socket and, eventually, a carrier substrate, to prevent movement of the carrier substrate relative to the housing. The contact area is a part of the electrode adapted to be in direct contact with the contact socket and providing the second main current path from the electrode to the contact socket and the carrier substrate.

[0004] With the electrode connected to the power source to supply electric current carrier substrate. The electric current heats both the electrode and the carrier substrate. The electrode and the supporting substrate each has a certain temperature, and the temperature of the supporting substrate is heated to the deposition temperature. The treated carrier substrate is formed by deposition of material on the carrier substrate.

[0005] As is known in the art, there are variations in the shape of the electrode and the contact socket to accommodate thermal expansion precipitated on the carrier substrate material by heating the carrier substrate prior to deposition temperature. One such method involves the use of an electrode with a flat head and a contact socket in the form of graphite slide block. Graphite slide block acts as a bridge between the carrier substrate and the electrode with a flat head. The weight of the carrier substrate and graphite slide block acting on the contact area, reduces the contact resistance between the graphite slide block and the electrode with a flat head. Another such method involves the use of electrodes of two parts. The electrode of the two parts includes a first half and second half of the compression of the contact socket. With the first half and the second half of the electrode is C two parts is connected to the spring element to provide power for compression of the contact socket. Another such method involves the use of forming a glass electrode contact area located inside of the glass electrode. Pin receptacle adapted to sit in a glass electrode and to contact with a contact area located inside of the glass electrode. Alternatively, the electrode may form a contact area on its outer surface without obrazovaniya of the glass and the pin can be made in the form of a cap that sits on top of the electrode for contact with a contact area located on the outer surface of the electrode.

[0006] On the contact area is the "obliteration" of the electrode due to sediment accumulation. Deposits over time lead to improper landing between the contact socket and the electrode. Improper landing causes a small electrical arc between the contact area and the contact socket, resulting in the contamination of a metal material deposited on the carrier substrate. Contamination of the metal reduces the value of the carrier substrate as deposited material is less pure. In addition, the occlusion reduces the heat transfer between the electrode and the contact socket in which the electrode reaches a higher temperature for efficient heating of the contact socket and, in the end, the carrier substrate. the more the high temperature of the electrode lead to rapid deposition of material on the electrode. This is especially true in the case of electrodes that contain silver or copper as the sole or primary present in the metal.

[0007] the Electrode must be replaced when one or more of the following conditions: first, when the contamination of the metal material deposited on the carrier substrate, exceeds a threshold level; secondly, when the growth of the contact area of the electrode causes the deterioration of the connection between the electrode and the contact socket; and, thirdly, when you need too big operating temperature of the electrode due to overgrowing of the contact area of the electrode. The electrode has a life determined by the number of load-bearing substrate, the electrode can handle before something happens to one of the above.

[0008] In connection with the above-mentioned problems related to occlusion of the electrode, there remains a need for at least slowing the overgrowth of the electrode for maintaining a connection between the electrode and the contact socket in order to improve performance and increase the service life of the electrode.

The invention and advantages

[0009] the present invention relates to a production plant for deposition of material on the carrier substrate and the electrode for use in such manufacturing facility. The carrier substrate has akademiese at a distance from each other, the first end and the second end. At each end of the carrier substrate is a contact socket.

[0010] Production unit includes a housing that forms a chamber. The housing also forms an inlet for introducing gas into the chamber and release for discharge of the gas from the chamber. At least one electrode is passing through the body, and this electrode is at least partially located inside the chamber for connection with the contact socket. The electrode has an outer surface having a contact area, which is adapted to contact with the contact socket. On the area of contact with the external surface of the electrode is plated contact area. Covering the contact region has a conductivity of at least 9×106Siemens/meter and corrosion resistance, which is greater than that of silver in the range of electrode potentials, which is based on the use of sea water at room temperature as the electrolyte. With the electrode connected to the power source to supply electric current to the electrode.

[0011] There are many advantages of regulation type and location of the coverage area of contact on the outer surface of the electrode. One advantage is that it is possible to slow down the spread of the electrode by the selection of the coating of the contact area on the outer surface of the electrode with different what materials depending on the source of eutrophication. By slowing down the overgrown extended service life of the electrode, which leads to lower production costs and reduce the length of the production of the processed load-bearing substrates. In addition, considerations of electrical conductivity are of greater importance within the contact area on the outer surface compared to the area outside the contact area, thereby providing the advantages of using materials that meet the requirements for corrosion resistance and conductivity in surface contact area.

Brief description of drawings

[0012] Other advantages of this invention will be easily appreciated, and will be best understood by reference to the following detailed description when considered together with the attached drawings, on which:

[0013] Figure 1 is a view in section of a production plant for the deposition of material on a carrier substrate including the electrode;

[0014] Figure 2A is the first view in perspective of the electrode used with the production installation according to Figure 1, showing the inner surface of;

[0015] Figure 2B is a second view in perspective of the electrode on the Figure 2A, forming a Cup with a contact surface located on the inside part of the glass;

[0016] Figure 3 is a view in cross section of the electrode Figo is e 2, made along the line 3-3;

[0017] Figure 4 is an enlarged view in cross section of the electrode on the Figure 3, showing the pin located inside the Cup;

[0018] Figure 5 is a view in cross section of the electrode on the Figure 3 with a part connected to the circulation system;

[0019] Figure 6 is a view in cross section of another variant of realization of the electrode on Figures 2 through 5 located on the electrode coating of the contact area, the outer coating and the coating of the channel; and

[0020] Figure 7 is a view in cross section of the production installation according to Figure 1 during the deposition of material on the carrier substrate.

Detailed description of the invention

[0021] Referring to the Figures, in which similar numbers indicate similar or corresponding parts in the several views, a production unit 20 for the deposition of material 22 on the carrier substrate 24 is depicted in Figures 1 and 7. In one embodiment, the implementation is subject to deposition of material 22 is silicon; however, it should be understood that the production unit 20 can be used for deposition of other materials on the carrier substrate 24 without departing from the scope of the proposed invention.

[0022] Typically, when the methods of chemical vapor deposition known in the art, such as the way Siemens, carrier substrate 24 will the girl almost U-shaped and has a first end 54 and second end 56, at a distance and parallel to each other. Each of the first end 54 and second end 56 of the carrier substrate 24 is pin 57.

[0023] Production unit 20 includes a housing 28, which forms the chamber 30. Typically, the housing 28 includes an inner cylinder 32, the outer cylinder 34 and the plate base 36. The inner cylinder 32 has an open end 38 and the closed end 40 spaced from each other. The outer cylinder 34 is located around the inner cylinder 32, forming a cavity 42 between the inner cylinder 32 and the outer cylinder 34, typically serves as the shirt containing a circulating coolant (not shown). Experts in the art should understand that the cavity 42 may be a traditional shirt vessel, jacket with reflectors or shirt from polutropos, but not limited to.

[0024] the Plate base 36 is located at the open end 38 of the inner cylinder 32 forming chamber 30. Plate base 36 includes a seal (not shown)located in alignment with the inner cylinder 32 to seal the chamber 30 when the inner cylinder 32 is located on the plate-the base 36. In one embodiment, the implementation of the production unit 20 is a reactor of a chemical vapor deposition type Siemens.

[0025] the Housing 8 forms an inlet 44 for introducing gas 45 in the chamber 30 and 46 for discharge of the gas 45 from the chamber 30. Typically, the inlet pipe 48 is connected to the inlet 44 to the gas supply 45 in the housing 28 and the outlet pipe 50 is connected with the release of 46 for removing gas 45 from the housing 28. The outlet 50 may be enclosed in a shirt with a cooling liquid, such as water or a commercially available heat transfer fluid.

[0026] At least one electrode 52 is passing through the housing 28 for connection with the contact socket 57. In one implementation, as shown in Figures 1 and 7, this at least one electrode 52 includes the first electrode 52 located through the housing 28, to receive the pin 57 of the first end 54 of the carrier substrate 24, and the second electrode 52 located through the housing 28, to receive the pin 57 of the second end 56 of the carrier substrate 24. It should be understood that the electrode 52 may be any type of electrode known in the art, such as, for example, an electrode with a flat head, the electrode of the two parts or electrode with glass. In addition, this at least one electrode 52 is at least partially located inside the chamber 30. In one implementation, the electrode 52 is passing through the plate base 36.

[0027] the Electrode 52 contains a conductive material having a minimum electrical conductivity at room temperature is about at least 14×10 6Siemens/meter or Cm/m for Example, the electrode 52 may include at least one material from copper, silver, Nickel, Inconel and gold, each of which satisfies the above parameters conductivity. In addition, the electrode 52 may contain an alloy that satisfies the above parameters conductivity. Typically, the electrode 52 contains a conductive material having a minimum electrical conductivity at room temperature of about 58×106Cm/m Typically, the electrode 52 contains copper, and copper is typically present in an amount of about 100% by weight based on the weight of the electrode 52. Copper can be oxygen-free electrolytic copper grade UNS 10100.

[0028] Referring to Figures 2A, 2B and 3, the electrode 52 has an outer surface 60. The outer surface 60 of the electrode 52 has an area 66 of the contact. In particular, the region 66 of the contact, as defined here, is a part of the outer surface 60 of the electrode 52, which is adapted to be in direct contact with the contact socket 57 and which provides the main current path from the electrode 52 through the pin 57 and the carrier substrate 24. As such, during normal operation of the production plant 20 region 66 of the contact is shielded from material 22, which is then precipitated onto the carrier substrate 24. Since the area is 66 contact the lighting is Blin to be in direct contact with the contact socket 57 and usually not exposed to material 22 in the process of deposition on the carrier substrate 24, to the area 66 of the contact apply a different design considerations than to other parts of the electrode 52, and these considerations are described in more detail below.

[0029] In one implementation, the electrode 52 includes a shaft 58 having a first end 61 and second end 62. When he is, the shaft 58 also forms the outer surface 60 of the electrode 52. In General, the first end 61 is the open end of the electrode 52. In one embodiment, the implementation of the stem 58 has a circular cross-sectional shape that leads to the trunk in the form of a cylinder, which forms the diameter D1. However, it should be understood that the shaft 58 may have a rectangular, triangular or elliptical cross-sectional shape without departing from the scope of the proposed invention.

[0030] the Electrode 52 may also include a head 64 that is located on one of the ends 61, 62 of the shaft 58. It should be understood that the head 64 may be integral with the barrel 58. Usually when there is a head 64, the region 66 of the contact is placed on the head 64. Experts in the art should understand that the method of connection of the contact slot 57 with the electrode 52 may vary depending on the application without departing from the scope of the proposed invention. For example, in one implementation, such as in the case of electrodes with flat head (not shown), the contact area may be only the top of the her flat surface on the head 64 of the electrode 52, and the pin 57 may form a hood pin socket (not shown), which sits on the head 64 of the electrode 52 for contact with the contact area. Alternatively, although not shown, the head 64 may be missing at the ends 61, 62 of the shaft 58. In this implementation, the electrode 52 may form a contact area on the outer surface 60 of the shaft 58, and the pin 57 may be made in the form of a cap, which sits on the shaft 58 of the electrode 52 for contact with a contact area located on the outer surface 60 of the shaft 58. In another implementation, as shown in Figures 2A, 2B, 3 and 4, the electrode 52 forms a Cup 68 for receiving the contact socket 57. When the electrode 52 forms a Cup 68, the region 66 of the contact is on the inside part of the glass 68. Pin 57 and the Cup 68 may be constructed so that the pin 57 can be removed from the electrode 52 when the carrier substrate 24 is pulled out of the production plant 20. Usually, the head 64 forms a diameter of D2that is larger than the diameter D1shaft 58. Plate base 36 forms a hole (not numbered) for receiving the shaft 58 of the electrode 52, so that the head 64 of the electrode 52 remains inside the chamber 30 to seal the chamber 30.

[0031] On the outer surface 60 of the electrode is 52 may be located first thread 70. Again referring to Figure 1, around the electrode 52 is typically a dielectric sleeve 72 to isolate the electrode 52. The dielectric sleeve 72 may contain ceramics. At first the thread 70 is a nut 74 for clamping the dielectric sleeve 72 between the plate base 36 and a nut 74 to attach the electrode 52 to the housing 28. It should be understood that the electrode 52 can be attached to the housing 28 in other ways, such as, for example, with flange, without departing from the scope of the proposed invention.

[0032] Typically, at least one of the shaft 58 and the head 64 includes an inner surface 76 forming the channel 78. The inner surface 76 includes a contact end 80 located at a distance from the first end 61 of the stem 58. Contact end 80 is generally flat and parallel to the first end 61 of the electrode 52. It should be understood that can be used and other configurations of the contact end 80, such as a configuration in the form of a cone, the configuration in the form of an ellipse or a configuration in the shape of an inverted cone (none of which are shown). Channel 78 has a length L that extends from the first end 61 of the electrode 52 to the contact end 80. It should be understood that the contact end 80 may be located inside the barrel 58 of the electrode 52, or contact end 80 may be located inside the head 6 of the electrode 52, if it is there, without departing from the scope of the proposed invention.

[0033] Production unit 20 additionally includes a source 82 of the power supply connected to the electrode 52 for the supply of electric current. Usually, an electric wire or cable 84 connects the source 82 of the power supply electrode 52. In one embodiment, the implementation of the electric wire 84 is connected to the electrode 52 by passing electrical wires 84 between the first threads 70 and a nut 74. It should be understood that the connection of the electric wire 84 with the electrode 52 can be implemented in different ways.

[0034] the Electrode 52 has a temperature that varies with the passage through it of an electric current, which leads to heating of the electrode 52 and thereby setting the operating temperature of the electrode 52. This heat is known to specialists in this field of technology as dzhoulevo heat. In particular, the electric current passes through the electrode 52, the pin through the slot 57 and the carrier substrate 24, which leads to jouleva heat carrier substrate 24. In addition, dzhoulevo heat carrier substrate 24 leads to radiation/convection heating chamber 30. The passage of electric current through the carrier substrate 24 sets the operating temperature of the supporting substrate 24.

[0035] Referring to Figure 5 and again to Figures 1 and 7, the manufacturing condition is the time 20 may also include a circulation system 86, at least partially located within the channel 78 of the electrode 52. When available, the circulation system 86 may be at least partially located within the channel 78. It should be understood that part of the circulating system 86 may be located outside of the channel 78. On the inner surface 76 of the electrode 52 may be located a second thread 88 to connect the circulation system 86 with the electrode 52. However, specialists in the art should understand that the connection of the circulation system 86 with the electrode 52 can be used and other methods of fastening, such as the use of flanges or couplings.

[0036] the Circulation system 86 includes a cooler in flow communication with the channel 78 of the electrode 52 to reduce the temperature of the electrode 52. In one embodiment, the implementation of the cooler is water; however, it should be understood that the cooling fluid can be any fluid that is designed to reduce heat by circulation without departing from the scope of the proposed invention. Moreover, the circulation system 86 also includes a hose 90 is connected between the electrode 52 and the reservoir (not shown). Referring only to the Figure 5, the hose 90 includes an inner tube 92 and the outer tube 94. It should be understood that the inner tube 92 and the outer tube 94 can be integral with SHL is the Ngoma 90, or, alternatively, the inner tube 92 and the outer tube 94 can be attached to hose 90 using couplings (not shown). The inner tube 92 is located within the channel 78 and extends most of the length L of the channel 78 for the circulation of coolant within the electrode 52.

[0037] the Coolant inside the coolant circulation system 86 is under pressure to push the coolant through the inner tube 92 and the outer tube 94. Usually, the coolant leaves the inner tube 92 and forcibly confronted with the contact end 80 of the inner surface 76 of the electrode 52, and then leaves the channel 78 through the outer tube 94 of the hose 90. It should be understood that it is also possible configuration change threads on the back so that the coolant enters the channel 78 through the outer tube 94, and leaves the channel 78 through the inner tube 92. Experts in the field of heat transfer should be understood that the configuration of the contact end 80 affects the rate of heat transfer due to surface area and proximity to the head 64 of the electrode 52. As indicated above, various geometrical contours of the contact end 80 lead to different coefficients of convective heat transfer at the same speed of circulation.

[0038] Referring to Figures 3, 4 and 6, the electrode 52 includes a floor 96 of the contact area, located at region 66 contactlastname 52. Floor 96 of the contact region has a conductivity of at least 9×106Siemens/meter, more often at least 20, most often at least 40, and corrosion resistance greater than that of silver in a series of electrical potentials, based on the use of sea water at room temperature as the electrolyte. Such experiments on determination of the number of electrode potentials is well known in the art. In connection with the greater importance of electrical conductivity to cover 96 of the contact area than other parts of the electrode 52, which is not involved in the main current path between the electrode 52 and the carrier substrate 24, and because the floor 96 of the contact area is in contact with the contact socket 57 in the deposition process and to some extent shielded from the material 22 deposited on the carrier substrate, for use in coating 96 of the contact area choose special materials that satisfy the above properties of electrical conductivity. In addition, it is advantageous to choose a material that has a maximum resistance to corrosion and, thus, decreases more slowly than the material used for the electrode 52. Slow growth provides benefits to increase the service life of the electrode 52.

[0039] the Choice of a special type of materials, selection is selected for the cover 96 of the contact area, may depend on the conditions surrounding the electrode environment and, in particular, from thermal conditions near the electrode 52 due to the combined temperature of the supporting substrate 24, the current flowing through the electrode 52 of the electric current, flow of coolant and coolant temperature.

[0040] In a variant of realization of the electrode 52, shown in Figures 2A, 2B, 3, 4 and 5, which includes a glass of 68, corrosion reduces the tolerance of the Cup 68 and leads to a poor fit between the contact socket 57, located on the carrier substrate 24, and the region 66 of the contact located inside part of the glass electrode 68 52. Bad landing leads to the formation of small electric arcs between the region 66 of the contact and the contact slot 57 as the electric current is conducted from the electrode 52 to the carrier substrate 24. Small electrical arc can cause the metal electrode 52 is deposited on the carrier substrate 24, thereby causing contamination of the metal material 22 deposited on the carrier substrate 24. As an example, in the manufacture of silicon high frequency, it is desirable to maintain the minimum metal contaminants treated carrier substrate after deposition, as the metal contaminants bring impurities in silicon ingots and wafers, made of treated carrier substrate. These metal for razziali on the plates can diffuse from bulk wafers in the active region made from these plates microelectronic devices during subsequent processing of microelectronic devices. Copper, for example, extremely prone to diffusion inside the plates, if the concentration of copper in the treated carrier substrate is too great. In General, the electrode 52 should be replaced as soon as the contamination of the metal exceeds the limit level in polycrystalline silicon, or as soon as the material 22 is deposited on the electrode 52 and prevents the deletion of a contact socket 57 of the Cup 68 of the electrode 52 after processing. To illustrate this situation, the pollution of copper polycrystalline silicon due to the electrodes on the basis of copper is usually lower limit of 0.01 atomic billions of shares (ppba). However, experts in the field of production of semiconductor materials of high purity is recognized that the requirements for the pollution of transition metals vary depending on the particular application. For example, it is known that the silicon used in the production of ingots and wafers for photovoltaic cells, can tolerate much higher levels of contamination copper relative to the semiconductor silicon, for example, 100-10000 multiples, without any significant loss in service life and performance elements. As such, each presented for purity polycrystalline silicon requirement can be estimated separately, with respect to a replacement power is A.

[0041] in Addition, the corrosion reduces the efficiency of the electric conductivity between the electrode 52 and the carrier substrate 24, in particular, between a region 66 of the contact electrode 52 and the contact socket 57. The decrease in the efficiency of electrical conductivity requires an increase in the electric current required to raise the operating temperature of the carrier substrate 24 to a temperature of deposition. The decrease in the efficiency of electrical conductivity also increases the operating temperature of the electrode 52. When the operating temperature of the electrode 52 is close to the temperature of the deposition material 22 is deposited on the electrode 52.

[0042] the Floor 96 of the contact area extends the service life of the electrode by providing a higher corrosion resistance than those materials that are typically used for the formation of the electrode 52. In addition, since the corrosion of the electrode 52 in the area 66 of the contact is one factor that regulates whether or not to replace the electrode 52, the choice of materials for coating 96 of the contact area based on the corrosion resistance, may be more effective to extend the service life of the electrode 52, than the choice of materials for other parts of the electrode, where corrosion may be less of an issue. Thus, a special type of material used to cover 96 of the contact area should prot is prevented corrosion, while maintaining the electrical conductivity of the electrode 52.

[0043] Suitable materials that can be used to cover 96 of the contact area include gold, platinum and palladium. Usually, the floor 96 of the contact area contains gold due to the excellent combination of electrical conductivity and resistance to corrosion caused by various sources. Floor 96 of the contact area may include other metals, with the proviso that at least one element made of gold, platinum and palladium is included in the floor 96 of the contact area. For example, in one implementation the floor 96 of the contact area may additionally include at least one element made of silver, Nickel and chromium, such as an alloy of Nickel/silver. Usually, the floor 96 of the contact area includes almost only gold, platinum and/or palladium. However, when there are one or more of the other metals, the total number of gold, platinum and palladium is usually at least 50% by weight calculated on the total weight of the coating 96 of the contact area.

[0044] the Floor 96 of the contact region has a thickness of from 0,00254 to 0,254 mm, more often from 0,00508 mm to 0.127 mm, and most often from 0,00508 mm to 0,0254 mm

[0045] without going into theory, slow healing, attributed to the presence of the cover 96 of the contact area, extends the services of the electrode 52. More specifically, the floor 96 of the contact area stores the electrical conductivity between the electrode 52 and the contact slot 57, which reduces the operating temperature of the electrode 52 and prevents the deposition of material 22 to the electrode 52. In addition, the coating 96 of the contact area provides corrosion resistance for maintaining a connection between the contact socket 57 and the region 66 of the contact to prevent contamination of the deposited material 22 of the metal of the electrode 52. Increase service life of the electrode 52 reduces the cost of production, since the electrode 52 need to be replaced less frequently compared with the electrodes 52 without cover 96 of the contact area. In addition, the duration of production by the deposition of material 22 on the carrier substrate 24 also decreases as the replacement of the electrodes 52 is less compared to the situation when using the electrodes 52 without cover 96 of the contact area. Therefore, the floor 96 of the contact area leads to reduced downtime, production plant 20.

[0046] the Electrode 52 may be covered in other places other than the area 66 of the contact to extend the service life of the electrode 52. Referring to Figure 6, in one implementation, the electrode 52 includes an exterior coating 98, located on its outer surface 60 out of the region 66 of the contact. In particular, external pokr is ment 98 may be located on at least one of the head 64 out of the region 66 of the contact and the shaft 58 of the electrode 52. In other words, the outer layer 98 may be positioned on the head 64 out of the region 66 of the contact on the shaft 58 or the like on the head 64 out of the region 66 of the contact and the shaft 58.

[0047] When placed on the shaft 58 of the external coating 98 may extend from the head 64 to the first threads 70 on the shaft 58. Exterior coating 98 has a conductivity of at least 9×106Cm/m, more often at least 20, most often at least 40, and corrosion resistance greater than that of silver in the range of electrode potentials, based on the use of sea water at room temperature as the electrolyte. In connection with the lower value of the conductivity to the outer cover 98 than for the electrode 52, and since the external coating 98 is not intended to be in contact with the contact socket 57 in the deposition process, a wider range of materials can be used for the exterior coating 98 than the one that can be used for those parts of the electrode 52, which are intended to be in contact with the carrier substrate 24. In addition, because the requirements for conductivity to the outer surface 98 satisfies a wider range of materials than for parts of the electrode 52, which are intended to be in contact with the carrier substrate 24 may be selected from materials that are more resistant to the Orosei and thus, overgrown slower than the materials used for the electrode 52. Slow growth provides benefits related to the extension of the service life of the electrode 52.

[0048] a Special type of material used for the exterior coating 98 may depend on the specific location of the outer cover 98. For example, the source of corrosion and, therefore, revegetation may be different depending on the specific location of the outer cover 98. When the exterior coating 98 is located on the outer surface 60 of the head 64 out of the region 66 of the contact, the outer layer 98 is at least partially located inside the chamber 30 and, thus, exposed to material 22, which is used for deposition on the carrier substrate 24. In such circumstances, external coating 98 may be desirable to provide corrosion resistance in a chloride environment in the process of polycrystalline silicon and additional collateral resistance to chemical attack by chlorination and/or sililirovanie as a result of exposure of the material 22, which is used during the deposition process. Suitable metals that can be used for the exterior coating 98 on the head 64 of the electrode 52 out of the region 66 of the contact, include gold, platinum and palladium. Friend the e suitable metals, which can be used for the exterior coating 98 include silver, Nickel and chromium. When the exterior coating 98 is located on the outer surface 60 of the shaft 58, the outer layer 98 may include the same or other metals from those included in the exterior coating 98 on the head 64 out of the region 66 of the contact. In another variant of realization of the shaft 58 may not have a cover, located on its outer surface 60. In yet another embodiment, one implementation of the external surface 60 of the head may not have coverage, with the outer surface 98 that is located only on the outer surface 60 of the shaft 58.

[0049] the External coating 98 typically has a thickness of from 0,0254 mm to 0,254 mm, more often from 0,0508 mm to 0,254 mm, and most often from 0.127 mm to 0,254 mm

[0050] in Addition, on the inner surface 76 of the electrode 52 may be positioned on the floor 100 of the channel to maintain conductivity between the electrode 52 and the cooler. In General, the coating 100 channel has a higher resistance to corrosion, which is caused by the interaction of the cooler with the inner surface 76, as compared with the corrosion resistance of the electrode 52. Floor 100 channel typically includes a metal that resists corrosion and which prevents the accumulation of sediments. For example, the coating 100 of the channel may contain at least one element from silver, gold or the El and chromium. Typically, the coating 100 of the channel is Nickel. Floor 100 channel has a thermal conductivity of from 70,3 to 427 W/m * K, more often from 70,3 to 405 W/m * K, and most often from 70,3 to 90,5 W/m∙K. Floor 100 channel also has a thickness of from 0,0025 mm to 0.026 mm, more often from 0,0025 mm to 0,0127 mm, and most often from 0,0051 mm to 0,0127 mm

[0051] it Should be understood that the electrode 52 may include preventing tarnish layer (not shown)located on the floor 100 of the channel. Preventing tarnish layer is a protective organic thin-film layer, which is deposited on top of the cover 100 of the channel. Protective systems, such as Tarniban™ firm Technic Inc., can be used after the formation of the coating 100 channel electrode 52 in order to reduce oxidation of the metal electrode 52 and the floor 100 of the channel without creating excessive thermal resistance. For example, in one implementation, the electrode 52 may contain silver, and the floor 100 of the channel may contain silver to prevent tarnish layer, present to provide improved resistance to the formation of deposits in comparison with pure silver. Typically, the electrode 52 contains copper, and the floor 100 of the channel contains Nickel to maximize heat conductivity and resistance to Deposit formation, preventing tarnish layer, located on the floor 100 of the channel is.

[0052] it Should be understood that in addition to the floor 96 of the contact area of the electrode 52 may have at least one exterior coating 98 and the cover 100 of the channel in any combination. Floor 100 of the channel, the outer layer 98 and the floor 96 of the contact area can be formed by deposition (galvanothermy). However, it should be understood that each of these coatings can be formed in various ways without departing from the scope of the proposed invention. Also, experts in the field of production of semiconductor materials of high purity, such as polycrystalline silicon, need to understand that some processes involving use materials that are doped with impurities, for example, elements of group III and group-V (with the exception of nitrogen for the case of the production of polycrystalline silicon), and the choice of suitable coating can minimize potential contamination of the carrier substrate 24. For example, it is desirable that the area of the electrode, usually located inside the chamber 30, such as the floor 108 of the head and the floor 96 of the contact area, had minimal inclusion of boron and phosphorus in their respective electrode coating.

[0053] a Typical method of deposition material 22 on the carrier substrate 24 is discussed below with reference to Figure 7. The carrier substrate 24 is placed NR is try camera 30 so that to contact the socket 57, located on the first end 54 and second end 56 of the carrier substrate 24, were located inside the Cup 68 of the electrode 52, and the chamber 30 is pressurized. Electric current is passed from a source 82 of the power supply to the electrode 52. The temperature of deposition is calculated from subject to deposition of material 22. The working temperature of the supporting substrate 24 is increased by direct passage of electric current in the carrier substrate 24, so that the working temperature of the supporting substrate 24 is greater than the temperature of deposition. Gas 45 is injected into the chamber 30, as only the carrier substrate 24 reaches the deposition temperature. In one embodiment, the implementation of gas 45 is introduced into the chamber 30 contains galoisian, such as chlorosilane or bromelain. The gas may further comprise hydrogen. However, it should be understood that this invention is not limited to those present in the gas components and that the gas may contain other precursors to the deposition, in particular containing silicon molecules, such as silane, silicon tetrachloride and tribromsalan. In one embodiment, the implement carrier substrate 24 is a thin rod of silicon, and production unit 20 can be used for the deposition of silicon on it. In particular, in this embodiment, a gas composition generally includes trichlorosilane, and silicon precipitated carried on the next substrate 24 in thermal decomposition of trichlorosilane. The cooler is used to prevent reaching the operating temperature of the electrode 52 of the deposition temperature, to ensure the absence of deposition of silicon on the electrode 52. The material 22 uniformly precipitated on the carrier substrate 24 until, until you reach the desired diameter of the material 22 on the carrier substrate 24.

[0054] once the carrier substrate 24 is processed, the electric current is interrupted, so that the electrode 52 and the supporting substrate 24 is deprived of electric current. Gas 45 divert through 46 of the housing 28 and the carrier substrate 24 is allowed to cool. As soon as the working temperature of the treated carrier substrate 24 is decreased, the treated carrier substrate 24 may be removed from the chamber 30. Processed carrier wafer 24 is then removed, and in the production plant 20 is placed a new carrier substrate 24.

[0055] Obviously, in light of the above indications of possible numerous modifications and variations of the present invention. The above invention has been described in accordance with the relevant requirements of the legislation; therefore, the description is in fact rather rough than restrictive. Variations and modifications of the disclosed embodiments may become apparent to experts in the art and are within the scope of the invention. Accordingly, the scope of legal protection provided for the Tim invention, can be determined only by studying the following claims.

1. A production plant for the deposition of material on a carrier substrate having spaced apart first end and a second end, with the contact socket located on each end of the carrier substrate, and said apparatus comprises:
a housing forming a chamber;
an inlet formed through the said casing, for introducing gas into the chamber;
the issue formed through the said casing for the discharge of gas from the chamber;
at least one electrode having an external surface having a contact area, which is adapted to contact with the contact socket and the said electrode is passing through the said casing and the said electrode at least partially located inside the chamber for connection with the contact socket;
a power source connected to the said electrode for supplying electric current to the above-mentioned electrode; and
floor contact area, located at the above-mentioned contact area of the above-mentioned electrode to maintain the conductivity between the electrode and the contact socket and the said floor contact area has a conductivity of at least 9·106Cm/m and corrosion resistance greater than cerebra in the range of electrode potentials, based on the use of sea water at room temperature as the electrolyte.

2. Production installation according to claim 1, with the above-mentioned electrode additionally includes:
the barrel having a first end and a second end; and
head, located on one of the above all of the above-mentioned trunk.

3. Production installation according to claim 2, in fact the head of the above-mentioned electrode includes mentioned the external surface having the above-mentioned contact area.

4. Production installation according to claim 2, with said head contains copper.

5. Production installation according to claim 3, at least one of the said head and said stem above-mentioned electrode includes an outer coating that is different from the above-mentioned coating of the contact area and located on his/her mentioned outer surface outside of said contact region.

6. Production installation according to claim 3, at least one of the said head and said stem has no cover, located on his/her mentioned outer surface outside of said contact region.

7. Production installation according to claim 1, in fact the external coating of the above-mentioned electrode including the above-mentioned coating the contact area is at least partially located inside the chambers is.

8. Production installation according to any preceding paragraph, in fact the floor of the contact area contains at least one element made of gold, platinum and palladium.

9. Production installation according to claim 8, in fact the floor contact area further comprises at least one element made of silver, Nickel and chromium.

10. Production plant of any one of claims 1 to 7, with the above-mentioned coating the contact region has a thickness of from 0,00254 to 0,254 mm

11. Production plant of any one of claims 1 to 7, with the above-mentioned coating the contact region has a thickness of from 0,00508 mm up to 0.127 mm

12. Production plant of any one of claims 1 to 7, with the above-mentioned coating the contact region has a thickness of from 0,00508 mm to 0,0254 mm

13. Production plant of any one of claims 1 to 7, with the aforementioned at least one electrode includes a first electrode for receiving pin socket at the first end of the carrier substrate and the second electrode for receiving pin socket on the second end of the carrier substrate.

14. Electrode for use with a production plant for deposition of material on a carrier substrate having spaced apart first end and a second end, with the contact socket located on each end of the carrier substrate, and the above-mentioned electrode will contain:
the barrel having a first end and a second end;
head, located on one of the above all mentioned shaft for connection with the contact socket;
and said head has an outer surface having a contact area, which is adapted to contact with the contact socket; and
floor contact area, located at the above-mentioned contact area of the above-mentioned electrode, to maintain electrical conductivity between the electrode and the contact socket and the said floor contact area has a conductivity of at least 9·106Cm/m and corrosion resistance greater than that of silver in the range of electrode potentials, based on the use of sea water at room temperature as the electrolyte.

15. The electrode 14, while said head is integral with the said shaft.

16. The electrode according to any one of p or 15, these floor contact area contains at least one element made of gold, platinum and palladium.

17. The electrode P16, these floor contact area further comprises at least one element made of silver, Nickel and chromium.

18. The electrode according to any one of p or 15, with said head contains copper.

19. The electrode according to any one of p or 15, these trunk mention the second electrode includes a plating barrel, other than the above-mentioned coating of the contact area and located on the outer surface of the above-mentioned trunk.

20. The electrode according to any one of p and 15, these trunk does not cover the trunk, located on its outer surface.

21. The electrode according to any one of p or 15, these cover the contact region has a thickness of from 0,00254 to 0,254 mm

22. The electrode according to any one of p or 15, these cover the contact region has a thickness of from 0,00508 mm up to 0.127 mm

23. The electrode according to any one of p or 15, these cover the contact region has a thickness of from 0,00508 mm to 0,0254 mm

24. Production installation according to claim 8, with the above-mentioned coating the contact region has a thickness of from 0,00254 to 0,254 mm

25. Production installation according to claim 8, with the above-mentioned coating the contact region has a thickness of from 0,00508 mm up to 0.127 mm

26. Production installation according to claim 8, with the above-mentioned coating the contact region has a thickness of from 0,00508 mm to 0,0254 mm

27. The electrode P16, these cover the contact region has a thickness of from 0,00254 to 0,254 mm

28. The electrode P16, these cover the contact region has a thickness of from 0,00508 mm up to 0.127 mm

29. The electrode P16, these cover the contact region has a thickness of from 0,00508 mm to 0,0254 mm



 

Same patents:

FIELD: metallurgy.

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EFFECT: improving electrode stability and increasing heating device life time.

4 cl, 5 dwg

FIELD: electric heating devices based on heating resistors, possible use as component in various heating devices.

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1 dwg

FIELD: electrode system for glassmaking furnaces equipped with glassmaking pool.

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9 cl, 2 dwg, 1 ex

The invention relates to electrode industry, in particular to methods of management processes for graphite at the stage of the graphitization in the graphitization furnace direct heating

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FIELD: chemistry.

SUBSTANCE: invention relates to chemical industry and can be used in producing nanopowder by a plasma-chemical method. The composite nanopowder contains particles consisting of a core, which consists of layers of titanium carbonitride and titanium nitrate, and a cladding which consists of a layer of nickel, with the following ratio of layers of the core and cladding, wt %: TiCxNy, where 0.28≤x≤0.70; 0.27≤y≤0.63; - 24-66; TiN0.6 - 30-67; Ni - 4-9. The method involves feeding a precursor containing titanium nickelide and titanium carbide into a reactor-evaporator, treating in a current of nitrogen plasma at plasma flow rate of 60-100 m/s and at precursor feeding rate of 100-140 g/h, subsequent cooling in a current of nitrogen and trapping the evaporation product on a filter surface. The precursor contains said components in the following ratio TiNi:TiC=25-50:50-75.

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2 cl, 3 dwg, 2 ex

FIELD: metallurgy.

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4 tbl, 1 ex

FIELD: chemistry.

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2 cl, 4 dwg, 1 ex

FIELD: metallurgy.

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11 cl, 10 dwg

FIELD: machine building.

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2 cl, 1 dwg

FIELD: machine building.

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10 cl, 29 dwg, 4 tbl, 4 ex

FIELD: chemistry.

SUBSTANCE: the invention relates to production of polysilicon, in particular, to the reactor for chemical deposition of polysilicon from steam phase. = The reactor includes a support system fitted with supports for heating elements and the hull attached to the said support system, forming the deposition chamber. The device comprises at least one silicone heating element positioned in the chamber on the supports, and a power source connectable with both ends of the heating element through lead-ins in the support system, used to heat the heating element. The support system has a gas inlet connected with the silicon-containing gas source and a gas outlet. Furthermore, the heating element is U-shaped and has at least one tubular section with the outer diameter of at least 20 mm and the ratio of wall width to the outer diameter less than 1/4.

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7 cl, 6 dwg

Heat source // 2439196

FIELD: power engineering.

SUBSTANCE: heat source (1) comprises a container (2) for an initial substance and a cavity (4). The container (2) for the initial substance is made as detachable with the possibility of attachment to the cover (6), having the first heating device (8) to heat the cover (6) so that heat due to heat conductivity is sent to the container (2) and further to the initial substance in the cavity (4). The cover (6) additionally comprises a heated supply channel (14), being in a liquid connection with the cavity (4), to supply the initial substance from the cavity (4) into the reactor so that between the container (2) for the initial substance and the reactor an increasing temperature gradient is achieved.

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19 cl, 2 dwg

Coated articles // 2413746

FIELD: chemistry.

SUBSTANCE: invention relates to a method of coating articles made from valve metals which are used as component parts of turbomolecular pumps. An article made from a valve metal selected from aluminium, magnesium, titanium, niobium and/or zirconium and alloys thereof, is coated with an oxide ceramic layer formed from metal using a plasma-chemical method. The ceramic layer has a barrier inter-phase layer adjoining the metal, whose surface is coated with a polymer formed from monomers in form of dimers or halogenated dimers of general formula I where R1 denotes one or more hydrogens or halogens; each R2 denotes hydrogen or halogen; and each R3 denotes a xylylene residue with formation of a dimeric structure. Said monomers are incorporated into a capillary system and then polymerised on the surface of the oxide ceramic layer in a vacuum.

EFFECT: invention enables to obtain coatings with uniform surface porosity and high resistance to aggressive and corrosive media.

10 cl, 1 ex

FIELD: metallurgy.

SUBSTANCE: method for obtaining oriented fluoride coatings by method of chemical deposition from vapour phase involves arrangement of bottom layer in deposition zone of chemical deposition reactor at temperature of 250-400°C, deposition of fluoride coating on the bottom layer by mixing the flow of metal-organic compounds which are evaporated within temperature range of 150-300°C and pressure of 1-20 mbar, and fluoride-forming flow. As metal-organic compounds there used are volatile metal-organic compounds not containing fluor. Fluoride-forming flow is generated from solid precursor as a result of its evaporation directly in chemical deposition reactor at temperature of 50-120°C from solid precursor, and acid nonorganic bifluoride is used as precursor. Flow of metal-organic compounds and fluoride-forming flow is supplied to deposition zone either with counter-flow, or by coaxial introduction of flows in the inert gas flow.

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6 cl, 2 dwg, 4 ex

FIELD: radio and electric engineering.

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EFFECT: higher efficiency.

4 cl, 4 ex

FIELD: luminescent materials.

SUBSTANCE: nitride coating precursor, in particular aluminum-, gallium-, or tin-containing metalloorganic nitride, is charged into reaction vessel 10a filled with electroluminescent phosphor, e.g. ZuS-Cu, and surrounded by heating means 30a using nitrogen as inert gas carrier. Precursor is passed through pipeline 32 open all over its length. Co-reagent, e.g. anhydrous ammonia is fed into lower part of vessel 12a through porous glass disk 12a. When vessel 10a is heated to 150-225°C, nitride coating precipitates on phosphor particles being in fluidized state. Phosphor bearing nonoxide coating is characterized by high brightness after 100 h use at high humidity.

EFFECT: enabled large-scale manufacture of phosphors.

3 cl, 2 dwg

FIELD: microelectronics; methods of manufacture of microcircuit chips.

SUBSTANCE: the offered invention is pertaining to the field of microelectronics, in particular, to the methods of manufacture of microcircuit chips. The offered method includes a loading of semiconductor slices in a reactor having hot walls perpendicularly to a gas stream, pumping-out of the reactor air up to the ultimate vacuum, introduction of monosilane for deposition of layers of polycrystalline silicon, silane supply cutoff, pumping-out of the reactor air up to the ultimate vacuum, delivery of a noble gas into the reactor up to atmospheric air pressure, unloading of the semiconductor slices from the reactor. After introduction of the noble gas into the reactor conduct an additional thermal annealing of layers of polycrystalline silicon at the temperature of no less than 1323K, then keep the slices at this temperature during 40-60 minutes in a stream of noble gas and reduce the temperature down to the temperature of the polycrystalline silicon layers growth. The technical result of the invention is a decrease of heterogeneity of resistance of the polycrystalline silicon layers.

EFFECT: the invention ensures a decrease of heterogeneity of resistance of the polycrystalline silicon layers.

1 dwg, 2 tbl, 1 ex

FIELD: processes of chemical infiltration or chemical deposition from vapor phase, case hardening in furnace.

SUBSTANCE: method is used for monitoring process realized in furnace with use of gas reagent containing at least one gaseous hydrocarbon. Method comprises steps of adjusting working parameters of furnace; adding into furnace gas-reagent containing at least one gaseous hydrocarbon; discharging from furnace exhaust gases that contain by-products of gas-reagent reaction; washing out exhaust gases by means of oil that absorbs resins present in exhaust gases; receiving information related to process according to measured quantity of resins absorbed by oil. It is possible to change working parameters of furnace such as temperature, pressure in furnace, gas-reagent consumption and composition.

EFFECT: possibility for monitoring process in furnace without special apparatus of infiltration furnace.

14 cl, 1 dwg, 1 ex

FIELD: evaporation of liquid reagents used as precursors at application of coats by chemical deposition from vapor phase.

SUBSTANCE: liquid precursors of coat are continuously injected into evaporation chamber for forming the vapor. Evaporation chamber is provided with unit for distribution of liquid precursors of coat and is set in rotation by drive magnetic clutch not provided with seals. According to one version, gas forming the barrier before evaporation chamber is injected into zone located near evaporation chamber; velocity of this gas exceeds velocity of coat precursor vapor escaping from evaporation chamber, thus excluding penetration of vapor into drive magnetic clutch. According to another version, first member of drive magnetic clutch is connected with liquid precursor distributing unit located in evaporation chamber. Second member of drive magnetic clutch located near first member outside the evaporation chamber is set in rotation by first member of clutch which is connected with it by magnetic field.

EFFECT: possibility of obtaining pure flow of vapor used for chemical deposition of coats.

56 cl, 5 dwg

FIELD: technological processes.

SUBSTANCE: invention is related to metal coatings that are applied by means of chemical-thermal deposition from steam phase, and also to products and methods. Metal-containing precursor is transported in transport medium via chamber to base at temperature in transport volume that is less than temperature of metal-containing precursor decomposition. Deposition of metal layer onto base is carried out by means of decomposition of metal-containing precursor on base. Temperature at base is higher than decomposition temperature of metal-containing precursor. Temperature of base and temperature of metal-containing precursor in transport volume are measured directly. Rate of deposition and quality of mentioned metal layer on specified base is controlled by means of regulation of specified base temperature and temperature of metal-containing precursor in transport volume with application of transport mediums that are saturated with precursor. Temperature is regulated between transport mediums and base and during maintenance of conditions for transport mediums that are at least close to saturation.

EFFECT: improves quality of thin film from deposited material and significantly reduces formation of metal dust.

44 cl, 10 dwg, 2 tbl, 12 ex

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