Manufacturing method of cast target from molybdenum-based alloy for magnetron sputtering

FIELD: metallurgy.

SUBSTANCE: manufacturing method of cast target for magnetron sputtering from molybdenum-based alloy and target obtained using the above method is proposed. Method involves obtaining of an ingot of alloy on the basis of molybdenum. First, high-purity polycrystalline molybdenum ingot is obtained by means of deep vacuum refining by electron-beam drip re-melting of a workpiece made from high-purity molybdenum; after that, arc vacuum remelting of high-purity polycrystalline molybdenum ingot is performed with strips from high-purity monocrystalline silicon; at that, the number of strips is chosen from the condition for obtaining polycrystalline alloy ingot with composition of molybdenum - 0.005-1.0 wt % of silicon, which is subject to machining.

EFFECT: improving the quality of semiconductor devices and integral circuits due to improvement of chemical resistance of films, as wells as stability of value of transient resistance of contacts at heat treatment.

2 cl, 2 tbl, 1 ex

 

The invention relates to the field of metallurgical production of sprayed metal targets for microelectronics, and materials science conductive systems, semiconductor systems and integrated circuits. Molybdenum is of considerable interest due to its unique capabilities as a material of the low resistance contact to silicon and conductive systems. Molybdenum has a low electrical resistance and is closest to the silicon the value of the coefficient of thermal expansion. However, the use of molybdenum even high purity is complicated by the difficulties of obtaining films with the physical properties of bulk samples. Currently, the main industrial technology for deposition of thin films in the industry is magnetron sputtering targets.

Known electrode material including molybdenum containing more than 50 wt.% silicon, which is a complex chemical compound of molybdenum and silicon non-stoichiometric composition [Japan Patent No. 4926463]. This alloy is characterized by high resistivity and instability properties, due to the highly non-equilibrium state and is a significant drawback, especially in the case of high-temperature treatment (900°C) in the production of CMOS technology with camooweal is the amount of the shutter. Known material containing molybdenum, silicon and a metal of the platinum group [A.S. USSR №611520]. In this material during thermal treatment of thin film structures are formed chemical compounds and solid solutions, which in turn changes the electrical properties of films and especially contacts molybdenum-silicon. When this uncontrolled changes the resistivity of the film, the work function of electrons, a potential barrier contacts and other

Known methods adopted for the prototype, get cast targets of high purity molybdenum [RU NO. 2349657, RU # 2356964], sputtering which allows you to apply thin-film metallization on silicon structures. With all the undeniable physical and technological advantages of cast targets of high purity molybdenum when applying metallization problems of adhesion of the molybdenum to silicon and uncontrolled formation of non-stoichiometric compounds at the interface of the molybdenum-silicon. Another disadvantage is the increased oxidation films of molybdenum during the heat treatment in an inert atmosphere and in chemical processing solution monoethanolamine + dimethylformamide (1:3), which affects the stability of, for example, the threshold voltage in MOS-structures (MOS - metal-oxide-semiconductor). The best way to address this shortcoming had the ü alloying of molybdenum silicon while preserving high purity molybdenum on all other impurities. The presence of molybdenum silicon in the case of the use of this material as a contact to the semiconductor increases the stability of hidden contacts during high-temperature treatments (up to 900°C) due to the restricted diffusion of silicon atoms from the substrate during the formation phase of molybdenum silicide at the interface of the molybdenum-silicon.

The objective of the invention is to improve the quality of semiconductor Microdevices by improving the chemical resistance of molybdenum, is used as the conductive material systems, as well as the stability of the value of the contact resistance during thermal treatment.

DISCLOSURE of INVENTIONS

This is achieved by the use of a method of manufacturing a molded targets for magnetron sputtering from an alloy based on molybdenum, including the production of an ingot of the alloy on the basis of molybdenum, wherein the pre-receive a polycrystalline ingot of high purity molybdenum by deep vacuum refining electron beam drip melting of the workpiece made of high purity molybdenum, followed by vacuum arc remelting polycrystalline ingot of high purity molybdenum with strips of monocrystalline silicon of high purity, and the number of bands choose from a condition of obtaining poly is kristallicheskogo ingot of the alloy with the composition of the molybdenum - of 0.005 to 1.0 wt.% silicon, which is subjected to mechanical processing. Cast target for magnetron sputtering from an alloy based on molybdenum receive the specified method.

The lower limit of the selected ratio is limited by the low resistance of the material to oxidation during the heat treatment and chemical processing, when the content of silica in high-purity molybdenum is less than 0.005 wt.%.

The upper limit of the silicon content in the molybdenum is limited by the need to have a low electric resistivity of the material, as well as the ability to obtain reproducible thin-film elements during photolithographic processing. In case of excess silicon content of 1.0 wt.% in molybdenum significantly increases the resistivity of the material, which may degrade the performance of integrated circuits, as well as to impede the process of etching thin films of the proposed alloy.

The IMPLEMENTATION of the INVENTION

The method is as follows. The original piece of molybdenum is placed in the melting chamber of the electron beam furnace, producing the pumping chamber to create a vacuum and gradually melt the workpiece, bringing them under an electron beam generated axial gun. Then polycrystalline ingot of molybdenum with the addition of the silicon melt in e is introducao vacuum unit with intense electromagnetic stirring of the melt. To create longitudinal electromagnetic field using a solenoid DC wound on the cooling jacket of the vertical mold. The rotation of the melt contributes to the averaging of the chemical composition on silicon, eliminating temperature gradients and obtaining fine-grained cast structure due to the destruction of the crystallites and the emergence of additional crystallization centers.

An example implementation of the method

The implementation of the method implemented in the manufacture of cast targets based alloy of molybdenum. As the source material for the production of ingots of molybdenum used billet, made by pressing powders of high purity molybdenum. Refining produced by electron beam melting in high vacuum for installation in a vertical mold, resulting in a received polycrystalline ingots of high purity molybdenum with a diameter of 80 mm, Speed electron beam melting was 0.5-0.6 kg/min Along a polycrystalline ingot of high-purity molybdenum every 90-100 mm fastened a strip of high-purity monocrystalline silicon, for which we used a thin molybdenum wire. The number of pinned strips of silicon depended on the selected concentration of silicon in the alloy in the range of 0.005 to 1.0 wt.%. The second vacuum remelting p is likestilling ingot of high purity molybdenum with a fixed bands of silica produced in electric arc vacuum unit, equipped with a device for the electromagnetic stirring of the melt. The result has been a polycrystalline ingot of an alloy based on molybdenum with a given silicon content. The ingot diameter up to 200 mm at a length of 1000 mm, the Ingot was cut into a tape electrospark machine on a flat blanks for the manufacture of targets. Machining of workpieces made to obtain a sputtering targets specified geometry. The silicon content in the samples was controlled using mass spectrometry. Produced three ingot-based alloy of molybdenum with silicon content 0,008, 0.1 and 0.8 wt.%, and one ingot of high purity molybdenum (without doping with silicon). The diameter of the ingot 200 mm Made two spray targets from each ingot 8 round sputtering targets with a diameter of up to 190 mm for installation "Oratorio-5". Conducted a detailed study of processes of magnetron sputtering targets of high purity molybdenum and thin films obtained by sputtering targets all four alloys. Thin-film layers of alloy molybdenum-silicon (0,008 wt.%) thickness of 0.15 μm on the test structures were obtained by sputtering the targets of the corresponding composition. Then there was photolithographic etching of the obtained films by etching in a 50%solution of a NGO3, and then at a temperature of 140°C was applied the interlayer dielectric, in which was revealed the contact window to the surface of the molybdenum by plasma-chemical etching through a mask of photoresist, which is then removed in a solution of monoethanolamine+dimethylformamide (1:3). The formation of the second level conductive layer is carried out by applying a film of aluminum with a thickness of 1.2 μm with subsequent photolithographic engraving. Annealing the obtained test structures produced in nitrogen atmosphere at a temperature of 430°C for 15 min Degradation test structures were determined on the microscope by the presence of dark areas on the outer part of the contact, indicating that the oxidation of the material of the lower level conductive system. The test results of test structures are shown in Table 1.

Table 1
Degradation of test structures
Heat treatment conditionsDegradation of the test structures %
The material of the lower level conductive system
Mo RFMo+Si (0,008%)Mo+Si(0,8%)Mo+Si(0,8%)
T=430°C, t=15 min, Nitrogen 115,543

To assess thermal stability of the contacts molybdenum-silicon produced test structure for measuring contact resistance of the contact four-point method. Annealing test structures with a film thickness of 0.2 μm was carried out in an argon atmosphere at temperatures of 800°C and 900°C for 15 minutes. The test results of test structures on the increase of contact resistance are shown in Table 2.

Table 2
The increase of contact resistance
Heat treatment conditionsThe increase of contact resistance, %
Contact material
Mo RFMo+Si(0,008%)Mo+Si(0,1%)Mo+Si(0,8%)
T=800°C t=15 min, argon40201410
T=900°C t=15 min, argon53 1713

Thus, using the proposed method to obtain cast targets of molybdenum-doped silicon, can significantly improve the quality of integrated circuits by improving the chemical resistance of the conductive material systems and the stability of the value of the contact resistance during heat treatment. Given listed above set of advantages, this allows you to get a higher technical and economic effect, which manifests itself in improving the quality of integrated circuits and increasing the yield of products.

1. Method of manufacturing molded targets for magnetron sputtering from an alloy based on molybdenum, including the production of an ingot of the alloy on the basis of molybdenum, wherein the pre-receive a polycrystalline ingot of high purity molybdenum by deep vacuum refining electron beam drip melting of the workpiece made of high purity molybdenum, followed by vacuum arc remelting polycrystalline ingot of high purity molybdenum with strips of monocrystalline silicon of high purity, and the number of bands chosen from the condition of the polycrystalline ingot of the alloy with the composition of the molybdenum - of 0.005 to 1.0 wt.% silicon to the second machine.

2. Cast target for magnetron sputtering from an alloy based on molybdenum, characterized in that it is obtained by the method according to claim 1.



 

Same patents:

FIELD: metallurgy.

SUBSTANCE: manufacturing method of cast target for magnetron sputtering from tantalum-based alloy and target obtained using the above method is proposed. Method involves obtaining of an ingot of alloy on the basis of tantalum. First, tantalum ingot of high purity degree is obtained by means of deep vacuum refining by electron-beam drip re-melting of a workpiece made by pressing of high-purity tantalum powders; besides, ingots of intermetallic compounds TaFe2 and YFe3 are obtained by melting of tantalum with iron and yttrium with iron; after that, arc vacuum remelting of high-purity tantalum ingot with ingots of intermetallic compounds TaFe2 and YFe3 is performed at their ratio, wt %: TaFe2 3.0-10.0, YFe3 0.3-3.0, Ta - the rest; ingot of tantalum-based alloy with composition of Ta + 1 wt % Fe + 0.1 wt % Y is obtained and subject to machining.

EFFECT: improving the quality of sputtered targets in order to increase the yield ratio of thin-film capacitors.

2 cl, 1 tbl, 1 ex

FIELD: metallurgy.

SUBSTANCE: manufacturing method of composite target for obtaining films by magnetron sputtering and target obtained using the above method is proposed. Method involves manufacture of disc from polycrystalline titanium ingot obtained by multiple vacuum titanium re-melting, drilling of holes in staggered order in sputtered zone of titanium disc along two concentric circles and fixture of cylindrical inserts in them. Cylindrical inserts are made by cutting of ingots of monocrystalline tungsten and monocrystalline rhenium, which have been obtained by multiple vacuum remelting of tungsten and rhenium. Inserts attachment is performed by press fitting to drilled holes at the ratio of surface areas occupied with tungsten and rhenium inserts on surface of target in titanium disc providing the production of films consisting of the following, wt %: titanium 2.5-37.0, rhenium 0.04-9.78, and tungsten is the rest.

EFFECT: improving reliability and process barrier layers due to decreasing mechanical stresses and improving homogeneity of metal coating.

2 cl, 1 tbl, 1 ex

FIELD: metallurgy.

SUBSTANCE: manufacturing method of composite target for obtaining films by magnetron sputtering and target obtained using the above method is proposed. Method involves manufacture of disc from polycrystalline titanium ingot obtained by multiple vacuum titanium re-melting, drilling of holes in staggered order in sputtered zone of titanium disc along two concentric circles and fixture of cylindrical inserts in them. Cylindrical inserts are made by cutting of ingots of monocrystalline tungsten and monocrystalline silicon, which have been obtained by multiple vacuum remelting of tungsten and silicon. Inserts attachment is performed by press fitting to drilled holes at the ratio of surface areas occupied with tungsten and silicon inserts on surface of target in titanium disc providing the production of films consisting of the following, wt %: silicon 0.1-1.3, titanium 11-33, and tungsten is the rest.

EFFECT: increasing thermal stability of metal coating and reproducibility of its formation process.

2 cl, 1 tbl, 1 ex

FIELD: physics.

SUBSTANCE: invention relates to electronic engineering, particularly delay-line structures for O-type microwave devices with given filter properties. The delay-line structure has coil sections and an outer cylindrical metal housing. The outer cylindrical metal housing is placed coaxially with windings of the coil sections. The ends of the coil sections are closed by a support on the outer cylindrical metal housing. The ends of neighbouring coil sections are displaced from each other clockwise by an angle α whose value is selected using the relationship: where N=1, 2, 3… is the number of coil sections per period of the structure.

EFFECT: wider operating frequency band and functional capabilities.

2 dwg

FIELD: electricity.

SUBSTANCE: device to transmit microwave capacity at the E11 wave comprises coaxially arranged section of a round wave guide with a vacuum-tight soldered-in dielectric disc (DD) and two sections of rectangular wave guides connected to the section of the round wave guide at its opposite ends, and also one or two metal tubes (MT) for a cooling liquid. Each MT is placed in an appropriate slot arranged in DD along its diameter at one DD side. Each MT is installed along the appropriate slot and is soldered with its walls along the entire length. Ends of each MT are soldered to the wall of the round waveguide section in a vacuum-tight manner. The longitudinal axis of each MT lies in the place of the axial section of the round waveguide section arranged in parallel to wide walls of the rectangular waveguide sections.

EFFECT: improved heat removal from a dielectric disc of a jar window and higher level of average microwave capacity sent via a jar window.

4 cl, 2 dwg

FIELD: electricity.

SUBSTANCE: delay-line structure of spiral type contains metal frame with at least one spiral located at ends of dielectric supports. At least one metal ring with grooves with rigidly fixed free ends of dielectric supports is installed at frame concentrically in regard to spiral; the ring has possibility of translational movement along the system axis. At the ring there is also a tool for ring translation in the form of protrusion with threaded hole for connection with pin which ends are installed at grooves of housing flanges. In result of pins rotation metal rings are translated with spirals along longitudinal axis of delay-line structure. During spirals movement distance between them is changed and it leads to changes in operating frequency and delay coefficient of the structure. It allows adjustment of delay-line structure.

EFFECT: provision of structure adjustment.

2 cl, 1 dwg

FIELD: physics.

SUBSTANCE: in the disclosed method, lamellae are made from monolithic copper material, where said lamellae have width and working gaps in between of up to 50 mcm, for which a fine-grained structure is formed from copper through equal channel angular pressing at a deformation rate of 0.4 mm/s at room temperature and with total number of pressing cycles equal to 8, with subsequent annealing at temperature of up to 150°C and holding for up to 1 hour to remove stress. Miniature high-precision periodic systems, having lamella thickness and working gaps in between of up to 50 mcm are made from spent copper through a combination of lathe machining and spark cutting.

EFFECT: high manufacturability of periodic systems of travelling-wave and backward-wave tubes, magnetrons and similar electrovacuum microwave devices in the millimetre and submillimetre wavelength range, while ensuring good output and operational parametres of the devices owing to reduction of wave loss increase in stability of their functioning.

2 cl, 3 dwg

FIELD: physics.

SUBSTANCE: collector rocking method for controlling an electron beam (1) in a beam collector (230), particularly of a magnetic gyrotron device, includes steps for exposing the electron beam (1) to the effect of a transverse rocking field, having a field component which is perpendicular to the longitudinal direction (z) of the beam collector (230) and provides an inclined, rotating region (3) of intersection of the electron beam (1) in the beam collector (230), and variation of at least one of the longitudinal position and angle of inclination of the region (3) of intersection for modulation of the transverse rocking field. The invention also describes a collector rocking device (100) and a microwave oscillator (200).

EFFECT: reduced formation of maximum power.

14 cl, 7 dwg

FIELD: electricity.

SUBSTANCE: microwave energy output is proposed with a window of can type for high-capacity electronic instruments, comprising sections of rectangular wave guides, connected to coaxially-installed section of circular wave guide between them, having different internal and external diametres, cross section of which comprises a dielectric disc, tightly connected to its internal surface and isolating vacuum part, compensator element arranged on external surface of circular wave guide section and connected to it, conducting element for suppression of parasite resonances in the form of hollow cylinder, at least of two solid parts, differing by external diametre, arranged coaxially to section of circular wave guide, element for cooling, connected to section of circular wave guide, connecting flange directly adjacent to end surface of round wave guide section at non-vacuum side, at the same time geometric dimensions of round wave guide section, dielectric disc and conducting element for suppression of parasite resonances are set on the basis of specified parametres of microwave energy output.

EFFECT: increased output capacity, thermal-mechanical and electric strength of connections of microwave energy output elements.

4 cl, 1 dwg, 1 tbl, 10 ex

Slow-wave system // 2395131

FIELD: electricity.

SUBSTANCE: system includes coaxial external and internal housings in the last one of which there installed is wave-guide structure, quarter-wave stubs each of which is formed with the conductor located between external and internal housings, and one end of which is connected through the pin to wave-guide structure, and the other one - to connection strap installed between external and internal housings. Wave-guide structure is made in the form of spiral; at that, each next place of connection of stubs to spiral relative to the previous one is offset through angle α clockwise and at the distance d along the spiral axis, and angle α and distance d shall be chosen from ratios: ; where N=1, 2, 3…, λ0 - length of wave in free space at central frequency of the specified working range.

EFFECT: enlarging the range of working frequencies of slow-wave system owing to coupling of several pass bands the number of which is determined with N number, and enlarging functional capabilities.

1 dwg

FIELD: metallurgy.

SUBSTANCE: manufacturing method of cast target for magnetron sputtering from tantalum-based alloy and target obtained using the above method is proposed. Method involves obtaining of an ingot of alloy on the basis of tantalum. First, tantalum ingot of high purity degree is obtained by means of deep vacuum refining by electron-beam drip re-melting of a workpiece made by pressing of high-purity tantalum powders; besides, ingots of intermetallic compounds TaFe2 and YFe3 are obtained by melting of tantalum with iron and yttrium with iron; after that, arc vacuum remelting of high-purity tantalum ingot with ingots of intermetallic compounds TaFe2 and YFe3 is performed at their ratio, wt %: TaFe2 3.0-10.0, YFe3 0.3-3.0, Ta - the rest; ingot of tantalum-based alloy with composition of Ta + 1 wt % Fe + 0.1 wt % Y is obtained and subject to machining.

EFFECT: improving the quality of sputtered targets in order to increase the yield ratio of thin-film capacitors.

2 cl, 1 tbl, 1 ex

FIELD: metallurgy.

SUBSTANCE: manufacturing method of composite target for obtaining films by magnetron sputtering and target obtained using the above method is proposed. Method involves manufacture of disc from polycrystalline titanium ingot obtained by multiple vacuum titanium re-melting, drilling of holes in staggered order in sputtered zone of titanium disc along two concentric circles and fixture of cylindrical inserts in them. Cylindrical inserts are made by cutting of ingots of monocrystalline tungsten and monocrystalline rhenium, which have been obtained by multiple vacuum remelting of tungsten and rhenium. Inserts attachment is performed by press fitting to drilled holes at the ratio of surface areas occupied with tungsten and rhenium inserts on surface of target in titanium disc providing the production of films consisting of the following, wt %: titanium 2.5-37.0, rhenium 0.04-9.78, and tungsten is the rest.

EFFECT: improving reliability and process barrier layers due to decreasing mechanical stresses and improving homogeneity of metal coating.

2 cl, 1 tbl, 1 ex

FIELD: metallurgy.

SUBSTANCE: manufacturing method of composite target for obtaining films by magnetron sputtering and target obtained using the above method is proposed. Method involves manufacture of disc from polycrystalline titanium ingot obtained by multiple vacuum titanium re-melting, drilling of holes in staggered order in sputtered zone of titanium disc along two concentric circles and fixture of cylindrical inserts in them. Cylindrical inserts are made by cutting of ingots of monocrystalline tungsten and monocrystalline silicon, which have been obtained by multiple vacuum remelting of tungsten and silicon. Inserts attachment is performed by press fitting to drilled holes at the ratio of surface areas occupied with tungsten and silicon inserts on surface of target in titanium disc providing the production of films consisting of the following, wt %: silicon 0.1-1.3, titanium 11-33, and tungsten is the rest.

EFFECT: increasing thermal stability of metal coating and reproducibility of its formation process.

2 cl, 1 tbl, 1 ex

FIELD: metallurgy.

SUBSTANCE: invention relates to production of thin films, particularly, to vacuum application of transparent conductive coatings by magnetron sputtering. Method for production of transparent conductive coatings of zinc oxide alloyed with helium on glass or polymeric substrate includes magnetron sputtering of cathode material consisting of zinc oxide alloyed with helium, sputtered material deposition on heated substrate with film forming on cathode material. Cathode sputtering is conducted in direct current argot atmosphere with unbalanced magnetic field of magnetron, which provides ion current density of 1 mA/cm2 and more on the substrate, with deposition performed on the substrate heated to the temperature of no more than 110°C. Unbalanced magnetic field of magnetron sputtering system is used.

EFFECT: electrophysical properties and homogeneity of distribution of coating electrophysical properties on a substrate at the temperature no more than 110°C.

9 dwg

FIELD: metallurgy.

SUBSTANCE: method includes installing at least one flat part on a carousel holder in a vacuum chamber, rotating the carousel and formation of a nanocomposite coating on a flat part with the help of sources of a sprayed material installed in the vacuum chamber. When the part passes in front of the source of the sprayed material, it is aligned with arrangement of a processed flat surface perpendicularly to the plane drawn via axes of carousel and holder rotation parallel to each other, and the part is fixed relative to the holder's axis. At the same time outside the area of the sprayed material deposition the part is turned by 180° relative to the holder's axis.

EFFECT: increased quality of a coating and homogeneity of its properties on the entire area of the processed surface of the flat part.

8 cl, 3 dwg

Vacuum-arc device // 2449513

FIELD: electricity.

SUBSTANCE: in vacuum-arc device, analog control unit, switching device and additional ballast resistances the value of which determines cathode clearance current and heating current respectively are included.

EFFECT: providing stable fault-free operation of extended structure plasma source, thickness uniformity of coating formed on treated products, accelerated cathode entering into operational mode.

3 dwg

FIELD: metallurgy.

SUBSTANCE: method involves reactive magnetron sputtering of metal target from alloy of indium with stannum and deposition in working chamber of coating on dielectric substrate in atmosphere of mixture of gases, which contains inert gas and oxygen with ion enhancement of coating deposition process with ion flow; coating is deposited on polymer film at value of average density of current of magnetron discharge on sputtered target surface of 180-200 A/m2 and ion enhancement of coating deposition process with ion flow with energy of 20-40 eV in two stages: first in mixture of gases, which contains 20-22 vol. % of oxygen; then, in mixture of gases, which contains oxygen of not less than 60 vol. %, provided that t1:t2=2-3 ratio is fulfilled, where t1 - time for carrying out the first stage of coating deposition, t2 - time for carrying out the second stage of coating deposition.

EFFECT: use of the proposed method allows increasing service life of transparent electrodes in composition of electrochromic material, as well as improving reliability and life of optically active electrochromic glasing material.

1 tbl, 7 ex

FIELD: chemistry.

SUBSTANCE: method includes application of a coating from titanium dioxide onto an item by the method of magnetron reactive DC sputtering of a titanium magnet in a mixture of argon and oxygen. Target sputtering is carried out under the total partial pressure of the mixture of 0.8-1.2 Pa, at the ratio of argon and oxygen in the mixture of 2/1, current density of 1.7-3.5 A/mm2 at the titanium target and the distance from the target to the substrate of 30-80 mm.

EFFECT: production of a coating with super-hydrophilic properties.

8 cl, 1 tbl, 1 ex

FIELD: process engineering.

SUBSTANCE: invention relates to method of razor blade formation. Proposed method comprises the following stages: fabricating substrate, producing wedge-like sharp edge on substrate with internal angle smaller than 30° and radius of rounding smaller than 1000 Å, placing said substrate into vacuum chamber, fitting first solid target into said chamber, feeding gas therein to ionise and generate ion flow from said first solid target by applying pulses of negative voltage to first solid target. This makes ions make thin-film coat of aforesaid sharp edges.

EFFECT: higher quality and durability.

17 cl, 6 dwg

FIELD: machine building.

SUBSTANCE: substrate holder consists of at least one module containing at least one head with elements of substrates fixation connected with drive and set by means of carriers on base. Carriers are transferred into one of fixed positions of waiting or processing. Treated surfaces of substrates are arranged along normal to vector of sputtered material flow. A platform of the installation is made in form of a hollow circular cylinder which under automatic mode facilitates cyclic setting travels of the substrate holders by means of mechanisms of their drive from one position of processing to another at angle α=2π/n, where n is number of processing positions. The cases of the substrate holders with mechanisms of their transfer and time control sensors are arranged on a special stage inside the platform under an aperture. The stages have guides rigidly secured beneath plane of overlap along boundaries of apertures in the direction from periphery to centre of the platform and two stops. A stationary stop is mounted on an internal surrounding frame of the platform. A flap stop is mounted on the internal surrounding frame of the platform with a lock.

EFFECT: raised efficiency, flexibility, resource saving, serviceability and quality of settled layer.

10 cl, 9 dwg

FIELD: metallurgy.

SUBSTANCE: manufacturing method of composite target for obtaining films by magnetron sputtering and target obtained using the above method is proposed. Method involves manufacture of disc from polycrystalline titanium ingot obtained by multiple vacuum titanium re-melting, drilling of holes in staggered order in sputtered zone of titanium disc along two concentric circles and fixture of cylindrical inserts in them. Cylindrical inserts are made by cutting of ingots of monocrystalline tungsten and monocrystalline rhenium, which have been obtained by multiple vacuum remelting of tungsten and rhenium. Inserts attachment is performed by press fitting to drilled holes at the ratio of surface areas occupied with tungsten and rhenium inserts on surface of target in titanium disc providing the production of films consisting of the following, wt %: titanium 2.5-37.0, rhenium 0.04-9.78, and tungsten is the rest.

EFFECT: improving reliability and process barrier layers due to decreasing mechanical stresses and improving homogeneity of metal coating.

2 cl, 1 tbl, 1 ex

Up!