Broadband multibeam klystron

FIELD: electricity.

SUBSTANCE: proposed klystron comprises spatially developed resonant systems, which are evenly arranged in the form of a fan in radial direction around the axis of symmetry of the klystron, with holes for electromagnet connection between active sector resonators. Each active sector resonator has through tubes that are arranged at the same distance from the klystron axis and are fixed on the central conductors, which are fixed on a "П"-shaped pedestal arranged on the inner cylindrical wall and having direct contact with two side covers. Metal pins passing through holes arranged in the inner cylindrical wall of active resonators are fixed in the lower part of the pedestal and are located at one axis with central conductors.

EFFECT: simplified system of microwave energy input and output, expansion of working frequency band, and also simplified manufacturing of active resonators tuned for various frequencies, design of which makes it possible to achieve multiplication factor of two ratios of the first higher cophased type of oscillations frequencies to the main antiphased one.

4 cl, 3 dwg

 

The invention relates to vacuum microwave devices, namely multipath mnogostanochnik broadband klystrons.

Known multibeam klystron, made in the form of a sequence of ring odnozalnyh resonators [A.S. USSR №784609, IPC: H01J 25/14]. Within each ring resonator is an additional resonator associated with the annular axially symmetric element of communication through common to both resonators wall. Part of the additional resonators connected with each other by elements of communication in General end walls. The input and output of microwave energy in the input and output ring resonators via the input and output additional resonators, respectively.

The disadvantage of this device is that its resonant system based on odnozalnyh resonators having a low characteristic impedance. This adversely affects the efficiency and weight of the device parameters. A wide band of amplified frequencies is achieved through the use of system related external passive resonators, which increases the cost and weight of the device parameters.

Closest to the proposed invention is the construction sector klystron [RF patent №2280293, IPC: H01J 25/12]containing the longitudinal napravlyennaya spatial-developed resonator systems, each of which consists of several separate active duhsasana resonators pie shape, with all active resonators separated by partitions, which are in the form of a fan in the radial direction around the axis of the device. Each sector of the resonator is equally distant from the axis of the instrument of the Central tube drift (span tube)mounted on the Central conductors. The Central conductors can be installed on the outer or on the inner cylindrical walls of the cavity and spatially separated in the longitudinal direction of the side covers.

Active (interacting with the beam) resonators, in turn, can be linked optimally selected slots of communications, located in partitions, forming the filter system. Within each of the active resonator, tuned to the frequency of the main signal, between the gaps can be placed additional duhsasana resonance system, the same design but smaller, configured on one of the frequencies of the higher harmonics of the main signal. Thus, in this design sector klystron can be made mode non-sinusoidal high-speed modulation at multiple frequencies corresponding to the main (π-type) and the first higher (2π -) fluctuations.

The disadvantages of this innovation is about the klystron are no summing of the resonator, because of what the input excitation of the resonator requires the use of either single-ended input energy, or the number of inputs equal to the number of sectors. Built-in additional duhsasana system designed to improve efficiency (non-sinusoidal high-speed modulation), greatly complicates and increases the cost of construction of the device.

The disadvantages include the difficulty of fabrication of resonators tuned to different frequencies, the low stability of the device (the appearance of spurious oscillations) when working in a wide band of frequencies.

The present invention is the simplification of the system input and output microwave energy, the expansion of the bandwidth of the klystron, and the simplification of manufacturing are configured on a different frequency active resonators, the design of which allows to achieve a ratio of two frequency ratios of the first high common-mode type of vibrations to the main phase and, thus, to make the mode non-sinusoidal high-speed modulation at multiple frequencies without the use of additional resonant system.

The problem is solved in that in the broadband the multibeam klystron, containing the input and output energy and input, intermediate and output spatial-developed resonance system, each of which consists of the edge is her least two identical active sector duhsasana resonators formed by outer and inner cylindrical walls of the spatial-developed resonance systems and are evenly distributed in the form of a fan in the radial direction around the axis of symmetry of the klystron partitions with holes for electromagnetic coupling between the active sector resonators, while in the longitudinal direction of the active resonators limited side covers with drift tubes for the passage of electron beams, each active sector of the resonator is equally distant from the axis of the klystron span tube fixed on the Central conductors of the active sector duhsasana resonators, according to the proposed technical solution of the Central conductors mounted on the U-shaped pedestal, located on the inner cylindrical the wall of the active sector of the cavity and having direct contact with the two side covers.

Change the height of the pedestal can be the difference in resonant frequencies, as well as to achieve a ratio of two frequency ratios of the first high common-mode type of vibrations to the main antiphase mind fluctuations, which is especially useful for broadband devices mnogostadiinoi structures, devices with different values of the resonant customresolution, and for devices that are configured simultaneously on the main frequency and higher harmonics.

Simplification of the system input and output signal is achieved by the fact that broadband the multibeam klystron within each spatial-developed resonance system is passive summing coaxial resonator associated with each active sector duhsasana resonator by means of a metal pin passing through the holes drilled in the inner wall of these resonators are positioned on the same axis with the Central conductors. The pins are fixed in the middle of a rectangular groove made in the lower part of the pedestal.

In turn for bandwidth expansion, at least the input and output passive summing the resonators may be associated with additional passive resonators, ending respectively the input and output energy. Thus the input and output energy can be located on the axis of the device.

The invention is illustrated by drawings, where figure 1 presents a schematic drawing of a six-variant wideband klystron, figure 2 is a cross section of the input spatial-developed resonance system, figure 3 presents a plot of the ratio of the frequency of the first higher-phase species variations, the fundamental frequency is th opposite phase species variations depending on the relative height of the pedestal.

Broadband multibeam klystron contains the input 1 and output 2 of microwave energy, and input 3, intermediate 4 and output 5 spatial-developed resonance system. Each spatial-developed resonance system consists of six identical active (designed to communicate with a separate bundle) pie duhsasana resonators formed 6 external and 7 internal cylindrical walls and are evenly distributed in the form of a fan in the radial direction around the axis of symmetry of the klystron 8 partition 9 with holes 10 for electromagnetic coupling between the resonators. In the longitudinal direction of the active sector resonators limited side covers 11 with drift tubes 12 for the passage of electron beams to the manifold 13. Each active sector of the resonator is equally distant from the axis of the instrument span tube 14 mounted on the Central conductors 15, with the axis of the drift tubes and the drift tubes are located on one straight line. The Central conductors are installed on the pedestal 16, made in the form of a rectangular parallelepiped, two opposite side faces which are in direct contact with the two side covers and parallel to them. In the lower part of the box is made equidistant from the side-covers the rectangular groove 17, proizvod the th through the pedestal in the transverse relative to the instrument axis direction so in longitudinal section, the pedestal has a U-shape. When this pedestal is installed on the inner cylindrical wall of the active sector of the resonator in the middle between the partitions.

Within each spatial-developed resonance systems are passive summing coaxial resonator 18 associated with the active sector resonators by means of metal pins 19 passing through holes 20 made in the inner wall of these resonators, and the metal pins fixed in the middle of a rectangular groove and positioned on the same axis with the Central conductors. The metal wire may be directly connected to the inner conductor 21 passive summing resonator.

The input and output passive summing the resonators associated with one or more additional series-connected passive resonators 22 using cracks connection 23 in General, end walls and end respectively of the coaxial input and output of energy, located on the axis of the device.

Broadband multibeam klystron operates as follows.

The amplified signal through the input of microwave energy 1 enters the passive summing the cavity 17 of the input spatial-developed resonance system 3, where through the hole 19 and the header is Aulnay groove 20, the signal enters the active sector duhsasana resonators input spatial-developed resonance system, where modulates the speed of e-flows generated cathode system.

Formed by time-of-flight electron bunches are sealed system with distributed interaction formed intermediate spatial-developed resonance systems 4. With sector resonators of different spatial-developed resonant systems can be tuned to different frequencies by changing the height of the pedestal 16.

Dense clumps of electrons give up their energy in the sector duhsasana resonators output spatial-developed resonance system 5, where the amplified signal through an opening 19 and a rectangular groove 20 is passed to a summing passive resonator output spatial-developed resonance system 5 and further to the output of microwave energy 2.

The unused portion of the flow energy is dissipated in the collector 13.

Thus, the use of active sector duhsasana resonators with pedestal by changing its height allows you to make customized on different frequency active sector resonators do not differ from each other by dimensions or parameters. While the selection of the height of the pedestal can be achieved ratio of the frequency ratio of the first high and the main types of oscillations (figure 3), which allows for work in nishinoshima enom mode not to use additional duhsasana resonance system, that simplifies the design of the device and reduces its cost.

Introduction passive summing coaxial resonators gives a possibility to stabilize the frequency of all of the resonators, thereby eliminating the influence of the inaccuracy of manufacturing an active sector of the resonators. Having located on one axis coaxial input / output energy allows efficient selection of microwave energy.

Since the input and output passive summing the resonators associated with one or more additional series-connected passive resonators, which are the elements of communication in General end walls, it is possible due to the formation of a single filter system (active sector duhsasana resonator passive summing the resonator and additional passive resonators) significantly (2-3 times) to expand the bandwidth of these resonators, and hence the entire device, in comparison with the prototype.

A direct connection between the metal pins in the input and output spatial-developed resonator systems allows you to get a low loaded q-factor of these systems, resulting in improved contour of the cap.

1. Broadband multibeam klystron, containing the input and output energy and input, intermediate and output prostranstve is developed resonant system, each of which consists of at least two identical active sector duhsasana resonators formed by outer and inner cylindrical walls of the spatial-developed resonance systems and are evenly distributed in the form of a fan in the radial direction around the axis of symmetry of the klystron partitions with holes for electromagnetic coupling between the active sector resonators, in the longitudinal direction of the active sector resonators limited side covers with drift tubes for the passage of the electronic beams, each active sector of the resonator is equally distant from the axis of the klystron span tube fixed on the Central conductors of the active sector of the resonators, characterized in that the Central conductors of the active sector of the resonators in each spatial-developed resonator system installed on the U-shaped pedestal, located on the inner cylindrical wall of the resonator in the middle between the walls and having direct contact with the two side covers, and inside each spatial-developed resonance systems are passive summing coaxial resonator associated with the active sector resonators by means of a metal pin passing through the holes drilled in the inner construction of the second cylindrical wall active resonators, and the metal pins fixed in the middle of a rectangular groove made in the lower part of the pedestal, and are located on the same axis with the Central conductors.

2. Broadband multibeam klystron according to claim 1, characterized in that at least one of the spatial-developed resonance systems the ratio between the length of the center conductor and the height of the podium in all active sector resonators is selected from the condition of achieving a ratio of two frequency ratios of the first high common-mode type of oscillation to the frequency of the main counter-type oscillations.

3. Broadband multibeam klystron according to claim 1, characterized in that it contains at least one passive coaxial resonator located at the side of the input and/or output spatial-developed resonance system and associated with passive summing coaxial resonator input and/or output spatial-developed resonance system, with passive coaxial resonator ends respectively coaxial input or output of energy, located on the symmetry axis of the klystron.

4. Broadband multibeam klystron according to claim 1, characterized in that the metal studs, at least in the input and output spatial-developed resonance system directly soy is inany with inner conductor passive summing coaxial resonator.



 

Same patents:

FIELD: high- and superhigh-frequency devices.

SUBSTANCE: proposed sector klystron related to O-type devices such as transit-time klystrons used for intensifying high-power electromagnetic fields in radar and communication engineering, as well and in medicine, and the like has cavities, energy inputs and outputs, electron collectors, magnetic focusing system, and electron gun generating axially symmetric electron flow from dispersed electron beams (each may incorporate one or more beams). Device also has isolating walls fanned in radial direction relative to common symmetry axis and forming therein separate spatial parts or sectors whose quantity is not greater than n, where n is integer number greater than unity, having equal or unequal radial angles α. Each sector forms in axial direction amplifier stage of several steps of sector cavities whose electric capacitive gaps pass one or more electron flow beams. A number of such klystrons can be electrodynamically integrated to form klystron complex.

EFFECT: reduced space requirement, enhanced efficiency throughout entire operating frequency band.

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Klystron // 2278439

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Multibeam klystron // 2239256
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The invention relates to the field of electronic equipment, in particular to a powerful mnogostanochnik span amplifying klystrons, and can be used in television transmitters picture and sound

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Lamp standing wave // 2163415
The invention relates to the field of electronics and is designed to generate and regenerative amplification of microwave electromagnetic waves

FIELD: microwave engineering; high-power broadband multibeam devices such as klystrons.

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FIELD: multirange microwave devices for radar stations.

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FIELD: electricity.

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FIELD: physics; radio.

SUBSTANCE: invention concerns electronic engineering, in particular to the electrovacuum microwave devices intended for reception of microwave capacity on two multiple frequencies also can be used, for example, in the accelerating technics, radar-location, radio countermeasure. The klystron-type microwave device contains the cylindrical target double-gap cavity (TDC), adjusted on an antiphase kind of fluctuations with an operating frequency co and on an inphase kind of fluctuations with an operating frequency 2ω. The device for microwave energy output contains, at least, two square-topped wave guides, connected with the TDC accordingly through the first and second coupling windows. The first coupling window is located between face walls of the target double-gap cavity equally spaced from them and allocated from a communication slot in a TDC conducting plate. The second coupling window is located from a continuous site of the conducting plate and located between the conducting plate and one of face walls of the output TDC opposite to corresponding high-frequency spacing. The sizes of wide walls of square-topped wave guides are chosen from the set conditions. The microwave device can contain a band elimination filter connected to the second square-topped wave guide.

EFFECT: increase of efficiency and expansion of functionality of the microwave device.

7 cl, 6 dwg

FIELD: electricity.

SUBSTANCE: proposed klystron comprises spatially developed resonant systems, which are evenly arranged in the form of a fan in radial direction around the axis of symmetry of the klystron, with holes for electromagnet connection between active sector resonators. Each active sector resonator has through tubes that are arranged at the same distance from the klystron axis and are fixed on the central conductors, which are fixed on a "П"-shaped pedestal arranged on the inner cylindrical wall and having direct contact with two side covers. Metal pins passing through holes arranged in the inner cylindrical wall of active resonators are fixed in the lower part of the pedestal and are located at one axis with central conductors.

EFFECT: simplified system of microwave energy input and output, expansion of working frequency band, and also simplified manufacturing of active resonators tuned for various frequencies, design of which makes it possible to achieve multiplication factor of two ratios of the first higher cophased type of oscillations frequencies to the main antiphased one.

4 cl, 3 dwg

FIELD: electricity.

SUBSTANCE: multibeam microwave device of O-type comprises an electron gun, an energy input and output, a collector and an electrodynamic system, comprising input, output and intermediate active resonators, the first output passive resonator, electromagnetically connected to the output active resonator. The input, output and intermediate active resonators are made in the form of sections of wave guides with a working type of oscillations H301, in each input, output and intermediate active resonator for passage of electronic beams there are three groups of individual drift tubes. Drift tubes of each group have axial-symmetrical placement in the form of at least one circular row, and the diameter of the circumference D, which limits the external circular row of drift tubes of each group is selected on the basis of the condition D=(0.32÷0.42)λ, where λ - wave length corresponding to the central frequency of the working band of the device.

EFFECT: higher pulse and average output capacity in wide band of frequencies with sufficient electric strength, higher efficiency factor.

8 cl, 6 dwg

FIELD: electronic equipment.

SUBSTANCE: invention relates to the field of electronic engineering. Cathode preheating unit for powerful klystron cathode contains several separate modules of a given size, each of which consists of a cathode block elementary cathode heater, holder, screen and are coaxially arranged drift tube klystron. Part of the cathode of each module to a height of (0.2-2.0) mm from the end opposite the working - emitting - a surface formed with a diameter greater than the diameter of the cathode module (0.2-10.0) mm. Warming cathode assembly is further provided with two cylinders - external and internal, with a given diameter, height - external, equal to the height of the cathode a separate module, or no more than two of its height, the inner - equal to the height of the cathode module, or - at least 0.5 of its height Each wall thickness (0.3-0.8) mm, the cylinders are arranged coaxially one inside the other in the working plane - emitting - cathode surface modules. Each individual cathode unit is additionally provided with a separate cylinder placed therein with a gap and secured by said holder part, with a separate barrel is diameter, which mate of cathode modules, height, at the height of the cathode module (1.0-5.0) mm, with a wall thickness equal to (0.2-0.6) mm, at the outer end face of each cylinder in the plane of the working - emitting - a surface formed monolithically fastening elements, each in the form of a circular segment with the length of its curve (4.0-8.0) the wall thickness of the individual cylinders in multiples of four and the individual cylinders with individual cathode modules are disposed between the inner and outer cylinders.

EFFECT: technical result - increase durability, power output and efficiency.

5 cl, 1 dwg, 1 tbl

Klystron // 2278439

FIELD: microwave engineering; heavy- and super-heavy-power floating-drift klystrons mainly used for superhigh-energy linear accelerators.

SUBSTANCE: proposed klystron incorporating provision for periodic electrostatic focusing of electron flow has vacuum enclosure accommodating electron gun, cavity resonators, and collector disposed along klystron axis, as well as diaphragms of periodic electrostatic focusing lenses disposed between adjacent cavity resonators and rigidly fixed on conducting rods. The latter are disposed in parallel with klystron axis between vacuum envelope and cavity resonators; they are fixed on electron-gun focusing electrode, electrically connected to the latter and to cathode, and electrically insulated from vacuum envelope and from cavity resonators. Output cavity resonator is enclosed by magnetic focusing system installed beyond vacuum section of klystron to form long-focus magnetic lens. Butt-end section of klystron is provided with optical window for passing laser beam to cathode that functions as photocathode.

EFFECT: enhanced electric strength at small transversal dimensions.

11 cl, 5 dwg

FIELD: high- and superhigh-frequency devices.

SUBSTANCE: proposed sector klystron related to O-type devices such as transit-time klystrons used for intensifying high-power electromagnetic fields in radar and communication engineering, as well and in medicine, and the like has cavities, energy inputs and outputs, electron collectors, magnetic focusing system, and electron gun generating axially symmetric electron flow from dispersed electron beams (each may incorporate one or more beams). Device also has isolating walls fanned in radial direction relative to common symmetry axis and forming therein separate spatial parts or sectors whose quantity is not greater than n, where n is integer number greater than unity, having equal or unequal radial angles α. Each sector forms in axial direction amplifier stage of several steps of sector cavities whose electric capacitive gaps pass one or more electron flow beams. A number of such klystrons can be electrodynamically integrated to form klystron complex.

EFFECT: reduced space requirement, enhanced efficiency throughout entire operating frequency band.

7 cl, 3 dwg

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