High-voltage semiconducting switching device
SUBSTANCE: high-voltage semiconducting switching device consists of selected by leakage current series connected unpackaged semiconducting elements that are centred and isolated by side surface with the help of fluoroplastic rings, housing, clamping system and current-carrying electrodes. The housing is made of isolating material with high mechanical and electrical strength. At both housing ends there are rigidly fixed metal flanges that are included in clamping system with threaded holes. At bolting of switching device cover to housing flanges with the help of clamping system elements located inside the cover there created is necessary compressive force of semiconducting devices and its transmission through the housing to semiconducting devices. Note that at the same time there performed is pressurisation of inner volume of switching unit housing by O-rings located between flanges and current-carrying electrodes.
EFFECT: increase of specific switching power of high-voltage semiconducting switching device current at simultaneous improvement of its switching characteristics.
5 cl, 1 dwg
The invention relates to the structural elements of the high voltage semiconductor switches (MIC) current based on the powerful diodes, diacs, thyristors and other power electronics devices. The invention can be used in powerful systems pulsed power supply (SIP) for various purposes (electrotechnological installations, experimental physical complexes and the like)where you want the switch to mega - and requiring gigawatts of capacity in submillisecond range monopulse operation.
Today VPK current largely determine the techno-economic characteristics of the SIP. This is due, on the one hand, the growing number of MIC current in the composition of the SIP (their number can reach tens and hundreds in one system pulse power), and on the other hand, the fact that the main characteristics of the military-industrial complex: unit switched power, size, reliability and cost, largely determine the feasibility of SIP with the required parameters. In this regard, the development of compact, reliable, relatively cheap to manufacture and convenient to operate high-voltage semiconductor switch current is extremely urgent and important task.
A characteristic value of the operating voltage of the modern m & as are tens of kV, and current - hundreds of kA. This MIC isone Assembly of series-connected semiconductor devices (PP) tablet design. Electrical and thermal contacts between paragraphs within the Assembly, and between PP and the external current-carrying electrodes are provided with compressive efforts, which are created tightening Assembly clip system. Operating voltage and switching current military-industrial complex are determined by the number of series-connected semiconductor devices with a given blocking voltage and the active area. Techno-economic performance MIC depend on the chosen design of the switch, and the parameters and characteristics used PP.
Traditionally, the semiconductor devices in high-voltage switches current SIP use thyristors. Known technical solution, the MIC on the basis of the thyristors designed for a working voltage of 24 kV, the pulse current 140 kA with a pulse duration (tp) 50 µs [High Power Semiconductors, SHORT FORM CATALOGUE 2008, ABB, No. 5SYA2018-01]. The height of the switch 60 cm, useful volume, including clamping system, is 1.2×104cm3. Structurally, the switch consists of series-connected tablet thyristors that are compressed with each other by using a clamp system, which includes: steel and plastic bearings, disc springs, hinge mechanism for aligning the compression force of the contact surfaces of the thyristors, compatmode the s electrodes. Anodic and cathodic parts of the switch are isolated from each other using plastic bearings and tightening bolts of the clamping device. The semiconductor element (PE) each tablet thyristor is enclosed in a separate sealed cermet body.
The main factor limiting the switching capability of the thyristor, is the mechanism of its activation. When applying to the control electrode of the thyristor trigger pulse current in the area of the control electrode is formed sufficiently narrow plasma channel, which slightly expands, but the speed of this process is small (0.1 to 0.005 mm/μs). Such localization of the inclusion process makes it almost impossible to create a conductive channel of a large area that does not allow you to switch with thyristors pulse current amplitude tens and hundreds of kA in submillisecond range of durations.
Currently in Russia for the first time in the world developed a promising military power on the basis of the reversal included diacs (WFD) (see, for example, U.S. Pat. EN 2107988, "high-Voltage switch, IPC6H03K 3/53, publ. 27.03.1998). WFD - two-electrode semiconductor devices tablet design, by its capabilities commutation pulse currents submillisecond duration far beyond the thyristors, p is because used for switching instead of the additional control electrode is fundamentally different way - by means of the control plasma layer. WFD switches with short-term change in the polarity of the applied voltage that provides a uniform and rapid activation of the device across the silicon structure. In the allowable slew rate dial-up current for the WFD is not less than 30 kA/μs, which is more than an order of magnitude greater than the values of di/dt, valid for high-power thyristors. Easy run consistently included the WFD common start-up current and high values of allowable slew rate current predetermine the advantages of MIC current diacs compared with the thyristor option.
With the aim of obtaining high values of providing power per unit volume (specific switched power) modern military power are performed on planar IR (see, for example, Chumakov G.D., Galakhov I.V., et al. "Switching of High-Power Current Pulses up to 250 kA and Submillisecond Duration using New Silicon Devices-Reverse Switched Dinistors" / 10th IEEE International Pulsed Power Conference, Albuguergue, NM, USA, 1995, pp.1103-1108, and B.E. Fridman and other "Capacitor cell capacitive energy accumulator switch-based reversal-include diacs". Instruments and experimental techniques, 2008, No. 6, p.51-57).
The closest technical solution, selected as a prototype, is military power is based on the powerful WFD, designed for a voltage of 25 kV and the pulse current up to 180 kA at p=450 µs [I.e Bertier, V.G. Bezuglov, I.V. et al. “On the possible use of semiconductor RSD-based switch for flashlamps drive circuits in a Nd-glass laser amplifier of LMJ facility” in Proc. XIIth IEEE International Pulsed Power Conference, Monterey, CA, USA, June 1999]. VPK current prototype contains an Assembly of 15 series-connected planar WFD tablet design with a diameter of PP 76 mm All of the WFD are enclosed in a common ceramic case. Clamping system provides the necessary force for tightening all of the WFD in the Assembly and consists of Belleville springs and tightening of the studs, as shown in figure 5 in the above article. Useful volume switch prototype is 6.5×103cm3.
The disadvantages of this switch are:
- low specific switching capacity, due to the considerable dimensions of military power;
- poor performance in terms of maintainability, namely the impossibility of replacement equipment during operation of the switch part of its semiconductor devices in connection with nerazborite corps military-industrial complex.
The objective of the invention is to increase the specific dial-up capacity and improving operational characteristics of MIC current.
The technical result of the invention is significant (not less than 1.5-2.0 times) increase in the proportion providing power MIC power while improving its operational characteristics is estik.
This technical result in the developed design of high-voltage semiconductor switch current is due to the fact that he, as well as MIC current prototype contains an Assembly of series-connected planar semiconductor devices tablet design, the body, the clamping system and the current-carrying electrodes.
New developed design of a high voltage semiconductor switch current is the fact that the switch is made from selected leakage current of semiconductor devices, which are centered and isolated on a lateral surface with a dielectric rings and placed in a sealed housing made of insulating material with high mechanical and electrical strength, thus clamping system made in the form of rigidly fixed at both ends of the metallic casing flange with threaded holes and thereby providing bolt clamp closures of switch required the effort of compression of semiconductor devices.
In the first the particular case of the implementation of the developed design of high-voltage semiconductor switch current appropriate body to perform from insulating material such as fiberglass, fiberglass reinforced, and for sealing the internal volume of the body uplo the additional rings of crasneanscki rubber locating between the metal flanges and the current-carrying electrodes.
The second particular case of the implementation of the developed design of high-voltage semiconductor switch current suitable as semiconductor devices use power diodes.
In the third special case implementation suitable as semiconductor devices use power thyristors.
In the fourth the particular case of implementation of the developed designs are suitable as semiconductor devices to use reversal-included diacs.
Additional technical result of the invention is also an improvement overall and cost characteristics developed powerful high-voltage semiconductor switch current.
The case of the proposed switch in addition to protection inside the semiconductor devices from the effects of the environment that is used in MIC current prototype performs additional functions:
insulation system providing reliable operation VPK voltage during application of high voltage between the anode and cathode of the switch (25 kV and above);
- tightening host system pressure switch that receives a compressing force up to 100 kN) for all semiconductor Assembly required for reliable switching of currents in the hundreds of kA.
The drawing shows the design of the development is spent MIC current.
In the proposed switch of a cylindrical body 1 made of insulating material with high mechanical and electrical strength, the height of the housing 1 is determined based on the desired operating voltage of the switch. Inside the housing 1 is high voltage Assembly of series-connected semiconductor devices 2. The housing 1 of the switch, on the one hand, protects the high-voltage Assembly from the external environment, on the other hand, provides the necessary air insulation distances and distances on the surface of the hull between the cathode and anode of the switch. In addition, through the housing 1, a part of the clamping system switch is transmitting compressive force to the semiconductor devices 2. On both ends of the housing 1 by the pins 3 is rigidly fixed to a metal flange 4 having threaded holes for fastening the covers 5 switch, also included in the clamping system. In the lower and upper lids 5 switch are system supports a gimbal type 7, 8, designed to provide uniform distribution of the compression force of the working surface of PP 2. These efforts are passed through the current-carrying electrodes 9.
In the top cover 5 of the switch are other elements of the system pressure, namely Belleville springs 10, the screw-bearing 11, the control washer (12) and two nuts 13. Data e the cops system clamp pre-assembled to the top cover 5, during this procedure, a calibration spring 10 by a specified compression effort. Fixing this effort is nuts 13. Assembly of the cover 5 with the flange 4 system pressure is alternately and evenly tightening the mounting bolts until the control washer 12 ceases to be compressed. In this case, the normalized compression force is transmitted to the working surfaces of the semiconductor devices 2 through the housing 1, the bottom cover 5, the pivot bearing 7, 8 and the current-carrying electrodes 9. Short paragraphs 2 are connected to each other through the copper disks 14, located between the anode of one semiconductor device 2 and the cathode of the neighboring device 2. Centering semiconductor devices 2, copper disks 14 and the current-carrying electrodes 9 a by using a dielectric, such as Teflon, rings 15, which, in addition, provide additional protection against breakdown on the surface of PP 2. The switch is sealed in the Assembly process using the sealing rings 16 of crasneanscki rubber located between the current-carrying electrodes 9 and the flanges 4 of the housing 1.
The proposed construction of a high voltage semiconductor switch current is designed for the application of power semiconductor devices of various type (diodes, thyristors, WFD)having a planar tablet design is the Ktsia with the diameter of the semiconductor elements to 100 mm
In particular, with the help of the developed MIC current (see the drawing) on the basis of the 15 series open-frame of the WFD with the diameter of the elements 76 mm and the permissible operating voltage of 2 kV is possible to switch the pulse currents up to 400 kA with a duration of 500 μs and a charging voltage of 25 kV, which is more than twice the allowable value of the amplitude of the switched current prototype MIC. This useful volume switch by eliminating a separate system pressure is not more than 4×103cm3that is 3 times less in comparison with foreign analogues and 1.5 times less compared to the prototype. Reducing the useful volume switch provides increased 1.5-2 times the unit providing power for the same technical characteristics PP.
The bolted connection of the lid 5 and the flange 4 of the housing 1 allows the operation process to quickly disassemble the switch to identify and replace the defective part of the semiconductor switch, which improves maintainability MIC and in view of reducing the overall dimensions of its performance as a whole.
Thus, the design MIC allows you to increase specific public switched power and to improve the operational characteristics of the switch, i.e. allows to solve the problem.>
Similar to the design of the switch can also be used in the manufacture of MIC for voltages up to 100 kV and pulse currents up to 1000 kA with high technical and economic characteristics.
1. High-voltage solid-state switch current, consisting of series-connected planar semiconductor devices tablet design, housing, clamp and current-carrying electrodes, wherein the switch is made from selected leakage current unpackaged semiconductor devices, which are centered and isolated on a lateral surface with a dielectric rings and placed in a sealed housing made of insulating material with high mechanical and electrical strength, thus clamping system made in the form of rigidly fixed at both ends of the metallic casing flange with threaded holes and thereby providing bolt clamp closures of switch required the effort of compression of semiconductor devices and its transmission through the body at the above-mentioned semiconductor devices.
2. High-voltage semiconductor switch current according to claim 1, characterized in that the casing is made of insulating material such as fiberglass, fiberglass reinforced, for sealing the inner volume of which is about the o-rings are made of silicon rubber is located between the metal flanges and the current-carrying electrodes.
3. High-voltage semiconductor switch current according to claim 1, characterized in that, as the semiconductor devices used in power diodes.
4. High-voltage semiconductor switch current according to claim 1, characterized in that, as the semiconductor devices used in power thyristors.
5. High-voltage semiconductor switch current according to claim 1, characterized in that, as the semiconductor devices used reversal-included diacs.
SUBSTANCE: integrated circuit device has a first chip with a plurality of via-holes running through the substrate, each containing electrocoductive material, where the first chip has a surface area; and a plurality of second chips, each having a plurality of contact points connected to the electroconductive material of the via-holes of the first chip. The plurality of second chips lies on the first chip such that they jointly form a surface area which is approximately equal to or greater than the corresponding surface area of the first chip. The invention discloses a method of making the integrated circuit device with a plurality of second chips placed on the first chip.
EFFECT: invention enables packing microcircuit chips on one another in order to improve operational characteristics without increasing surface area.
21 cl, 8 dwg
SUBSTANCE: system of power cells includes structure providing for multiple seats of power cells location. System also includes at least one regenerative power cell and at least one non-regenerative power cell. Seats of cells arrangement and power cells are maintained in size and are positioned so that each seat of cell arrangement may, on the basis of interchangeability, hold either regenerative power cell or non-regenerative power cell.
EFFECT: simplified operation.
SUBSTANCE: in a light-emitting diode radiation source having at least one or more semiconductor light emitters, monochromatic radiation emitters in the UV or optical region, a light emitter holder with connection leads, a radiator and a casing lens, in accordance with the invention, the semiconductor light emitters and monochromatic radiation emitters in the UV or optical region are coated with a luminophor. The wavelength of the radiation emitters coated with luminophor lies in the 450-455 nm range, and its chromaticity coordinates lie in the range X=(0.310, 0.315, 0.360, 0.360)±0.001, Y=(0.330, 0.310, 0.370, 0.350)±0.01.
EFFECT: invention enables design of a light-emitting diode radiation source which combines all advantages of light-emitting diode devices on one hand, and its parametres weakly depend on ambient temperature on the other hand.
9 cl, 10 dwg, 1 tbl
FIELD: information technologies.
SUBSTANCE: panel is formed of modules. Each module consists of functional unit packed in metal casing. At the ends of functional unit there are mutually engaging connectors for connecting serial modules. Functional unit is formed by multilayer package and contains metal plate, at least one polycarbonate sheet and at least one printed circuit board. The circuit board is equipped with light-emitting diodes.
EFFECT: invention makes possible to remove specks, increases contrast and improves image visibility.
7 cl, 12 dwg
SUBSTANCE: imaging device and communication device include: a data transmission unit, several signal transmission lines, a control unit, a switching unit, a data receiving unit and several signal reception lines, capable of transmitting a data signal from memory of several cartridges to the said data receiving unit. The data signal is transmitted to the said data receiving unit through a signal reception line connected to cartridge memory which can be connected to the said data transmission unit in response to connection of the said data transmission unit with one the said several signal transmission lines through the said switching units. The cartridge used in the imaging device contains: a first contact and a second contact, which can be connected to the communication device through two communication lines, a memory chip which can be connected to the first contact and the second contact.
EFFECT: design of an imaging device which communicates with several cartridges without increasing size of its circuits.
11 cl, 5 dwg
SUBSTANCE: hybrid integrated microwave circuit includes dielectric substrate on the front side of which there located is topological metallisation pattern, and on rear side - screen earthing metallisation, at least one metallised mounting platform connected to screen earthing metallisation, at least one transistor, at least two capacitors on both sides of transistor. At that, at least one of the transistor outputs is electrically connected to upper coatings of capacitors, at least two other outputs are electrically connected to topological metallisation pattern, lower coatings of capacitors are electrically connected to metallised mounting platform and through it to screen earthing metallisation. Transistor with outputs, two capacitors and electric connections of one of transistor outputs to upper coatings of capacitors are made in the form of at least one crystal of monolithic integrated circuit, which is located on one metallised mounting platform. At that, both capacitors are film-type, upper coatings of capacitors, outputs of transistor and electric connections of one of transistor outputs with upper coatings of capacitors are provided in one metallisation layer of crystal of monolithic integrated circuit. At that, in crystal of monolithic integrated circuit immediately under lower coatings of capacitors there made are through metallised holes for electric connection of lower coatings of capacitors with metallised mounting platform.
EFFECT: improving electrical and mass and dimensions characteristics, improving reliability, reducing labour input of manufacturing process.
6 cl, 3 dwg, 3 ex
SUBSTANCE: power hybrid microwave integrated circuit has transistors which are made in form of chips with flat beam leads. On the metallic heat-sinking base there is a projection whose layout coincides with the opening in the insulating substrate and enters the said opening. The height of the projection enables its top plane to lie aflush with the face of the insulating substrate. On the top plane of the projection there is a cavity running through from the side of the flat beam leads of the chip of one of the transistors connected to the topological metallisation pattern. On the top lane of the projection of the metallic heat-sinking base, at least on one side the chip of one of the transistors there is at least one mounting pad which has a metal plate which is has good electro- and heat conduction and is joined to it. In this metal plate there is at least one groove into which the chip of the other transistor is put. The groove runs through from the side of the flat beam leads of the chip which are connected to the topological metallisation pattern and is proportional to the pattern. Other flat beam leads of transistor chips are connected to the projection on the metallic heat-sinking base. The width of the transistor chip is equal to the width of the projection of the metallic heat-sinking base and the width of the good heat conducting plate. The thickness of the bottom of the groove and distance from the edge of the groove to the closest edge of the plate are selected such that there is minimal difference in maximum temperature of the chips.
EFFECT: improved heat removal from transistor chips, improved electrical and mass and size properties, as well as increased technological effectiveness of the power hybrid microwave integrated circuit.
3 cl, 2 dwg, 1 tbl, 1 ex
FIELD: technological processes.
SUBSTANCE: invention is related to microelectronics and may be used in production of three-dimensional hybrid integral module, comprising flexible board with mounted crystals of naked chips. In method for manufacture of three-dimensional hybrid integral module flexible board is made, besides at design stage all areas for bends are designed as branch fragments. When making assembly operations, branch fragments are coated with protective shock-absorbing adhesive coating along the whole length of bend semi-circle. Remaining parts of board are coated with thermal compensating coat, afterwards flexible board is folded in stack so that assembly terminals are located symmetrically relative to stack.
EFFECT: improved reliability of hybrid integral module.
FIELD: electrical engineering.
SUBSTANCE: invention relates to LED-based semi-conducting instruments production and may be used for manufacturing LED lamps in obstruction lights and signal lamps for ground lights, towers, high and long buildings and for light lamps and illumination. Method of cylindrical card with LED production includes the following steps: power unit and light-emitting diodes are placed on rectangular card work pieces. Besides, the power unit elements are placed on the end part of the card work piece. After that, it is bent at an angle to the card plane along the line parallel to the card work piece height. The next step includes bending of the card work piece around the bent end part until the hollow cylinder is formed, i.e. hollow cylindrical card with light emitting diodes being situated on its external surface and power unit elements being situated inside.
EFFECT: increase of manufacturability, reduce of assembling labour intensity and improvement of vibration stability of structure.
11 cl, 3 dwg
SUBSTANCE: device includes control unit, radiation unit encasing printed circuit with sequential intermittent rows of emission sources with LEDs of blue, red and green emission ranges, including parallel connected element branches with LEDs connected in sequence, and power unit. Control unit includes microcontroller with outputs connected to keyboard, display, digital to analog converters and impulse current stabilisers. Output of each converter is connected to stabiliser input, output of which is connected to emission source with a branch including padding resistor connected in sequence with LEDs. Each row of emission unit includes different LED number, and each emission source carries two or three intermittent LEDs with red, green or blue emission ranges.
EFFECT: simplified control of light-beam therapy device with different emission ranges.
2 cl, 2 dwg
SUBSTANCE: device for transmission of rotational movement includes movement conversion unit that includes intermediate element (3) connected with rotation axis (3a) with the possibility of rotating round it, mechanical energy accumulating unit (5) in a form of spring device, unit of stretchable/compressible spring connected with solid clamp and movable clamp and means of transmitting mechanical energy accumulated in spring device to driven element (2) via drive shaft (2a). Note that intermediate element (3) contains cam drive roller interacting with energy accumulating unit (5). Movable clamp is equipped with rolling element that contacts with drive roller periphery. Movable clamp can be performed with the possibility of moving in radial direction parallel to plane of drive roller. Method of transmission of rotational movement to element includes transmission of mechanical energy accumulated in spring device to drive shaft. Application of proposed device for rotational movement transmission is performed with the possibility of winding switch contacts' control under load in transformer or stabiliser.
EFFECT: improvement of rotational movement transmission use.
15 cl, 6 dwg
SUBSTANCE: contactor for operation on DC and AC currents is equipped with at least one contact part made of a fixed contact and a movable contact; at least one permanent magnet placed near the contact part and intended to develop a permanent magnetic arc-quenching field and at least one coil placed near the contact part and intended to develop an electromagnet arc-quenching field to suck-in the arc that originates when the contact part opens at least into one arc-quenching chamber. The contactor is also equipped with at least two contact parts, movable contacts of which are placed on the contact bridge; at least one permanent magnet placed near each contact part, besides, permanent magnets related to two contact parts are polarised in opposite directions.
EFFECT: provision of fast and reliable opening of contacts and arc-quenching, simplified design and manufacturing.
5 cl, 3 dwg
SUBSTANCE: electric appliance comprises bracket (110), equipped with mounting facilities for installation of at least one socle of mechanism of electric appliance, facing panel (120), installed on bracket, and facilities (200) of illumination arranged with the possibility to illuminate facade zone of specified instrument. According to invention, illumination facilities are installed on bracket (110) and are arranged with the possibility to illuminate section (120A) of facing panel (120).
EFFECT: creation of illumination halo around facing panel of electric instrument, for possibility of its being in the darkness or performance of indication function.
19 cl, 5 dwg
FIELD: physics, communications.
SUBSTANCE: invention relates to a unit for controlling blocked sockets. The disclosed device has a visual display device which is a ring of coloured areas and a ring of openings; a handle. The device is characterised by that the coloured areas correspond to symmetrical sectors of the ring which is concentric relative the handle. The sectors are formed on a plate which is joined to a support structure at a positioning point on the handle. The colour of the coloured areas and the colour of the plate are in contrast to each other. The visual display device has ring of openings formed on the handle. The openings interact with the coloured areas by turning the handle, which is suitable for changing the open/closed state of the rotating interrupter. The openings are formed on a circular screen which is monolithically joined to the hand, and correspond to the coloured areas. The circular screen has an outline part formed symmetrically about the indicator of the handle.
EFFECT: clear indication of the open/closed state of the rotating interrupter by rotating the handle.
2 cl, 6 dwg
SUBSTANCE: invention relates to electric switching device with the first interrupting unit for interruption and connection of electric line, in particular, to grounding switch with air insulation. Besides, invention relates to method for switching of grounding switch with air insulation, besides, on grounding switch with air insulation no electric arc is generated as a result of breakthrough in case of overvoltage. According to invention, it is provided that the second interrupting unit connected in parallel to the first interrupting unit is switched so that electric arc ignition generated in process of switching only happens in the second interrupting unit.
EFFECT: provides for arcless switching of grounding switch.
23 cl, 4 dwg
SUBSTANCE: starting device of backup power supply automatic input with mechanical interlocking (MI) includes electric contactors (1), (2) and (3), MI (4), (5), (6) and base (8). The device is equipped with additional electric contactors (3), MI (4) and (6) installed in front of electric contactor (1) and between electric contactors (2) and (3) matching unit (MU) (7). MU (7) consists of a lever (L) (13) performed with bended edges (14) and push bars (PB) (15) and (16). L (13) is fixed at the base (8) in the supports (17) with possibility of axial turning. PB (15) and (16) are hinged to bended edges (14) of L (13) on one side. The other end of PB (15) is put on a pin (11) of MI (4) yoke plate (9), and the other end of PB (16) is equipped with a pin (19) that interacts with electric contactor (3) contact system (12).
EFFECT: creating of compact starting device of backup power supply automatic input from three independent power sources with reliable mechanical interlocking of any two electric contactors with one switched on.
SUBSTANCE: invention can be used for electric circuit control in backup power supply input systems, namely for interlocking of three automatic switches that operate in switch on - switch off automatic mode. Device of mechanical interlocking of three automatic switches with electric drive consists of interlocking mechanisms (1, 2, 3) each of which is equipped with control element performed in a form of actuating pin (4) hinged at the retainer (5) and matching device (6) that includes two pairs of yoke plates (7, 8 and 9, 10). Yoke (7) plate is installed at the axis (11), yoke (8 and 9) plate is installed at the axis (12), yoke (10) plate is installed at the axis (13). At the yoke (7) pivot axis (11) there hinged is double-arm lever (14). At the yoke (13) pivot axis (10) there hinged is double-arm lever (15). The lower levers of the yoke plates (7 and 8) are connected between themselves by joint-hinge (16). The lower levers of the yoke plates (9 and 10) are connected between themselves by joint-hinge (17). The upper levers of the yoke plates (8 and 10) and double-arm lever (14) are hinged to actuating pin (4). The upper levers of the yoke plates (7, 9) and double-arm lever (15) are equipped with support (18) that interacts with actuating pin (4).
EFFECT: possibility to interlock in backup power supply input systems of three automatic switches that work in switch on - switch off automatic mode from electric drive.
2 cl, 5 dwg
SUBSTANCE: device contains magnetic core with sequential magnetic blow-out coil being installed on the first rod of magnetic core. On the second rod of magnetic core additional coil with capacitor are fixed. The said capacitor is coupled with additional coil so that they form oscillatory circuit.
EFFECT: improved operation safety and reliability and extended life cycle of switching unit.
SUBSTANCE: automatic circuit breaker comprises a guide and a locking device which accommodates a button hold piece which holds and releases a shutoff button, a working unit, a switch lock button comprising an indicator turnable in a fitting in/out section, and a switch hold element. A fitting in/out device of the guide enables to insert into a fitting in/out handle axis of the automatic circuit breaker only when the circuit breaker is disconnected.
EFFECT: ensured miniaturisation of a main body by the installation of the locking device on the guide and guaranteed user's safety and line and device protection in a power supply system.
10 cl, 11 dwg
SUBSTANCE: measurement device of partial discharges includes sensor of partial discharges, which is made in the form of inductance coil, analogue-digital and optic converters, which are all located inside electrostatic screen and having common grounding, and common power supply source of converters; at that, input of analogue-digital converter is connected to potential output of inductance coil, and its output is connected to input of optic converter to the output of which there attached is optic cable connected to external measurement device. Device is equipped with signal and magnetising windings located on electrostatic screen and having common grounding with the above elements, and with amplifier with negative amplification factor; at that, signal winding is connected to amplifier input, and magnetising winding is connected to amplifier output.
EFFECT: increasing interference immunity of measurement device of partial discharges.
3 cl, 1 dwg
FIELD: electrical engineering.
SUBSTANCE: proposed switch has movable contact, fixed contact, and arc-control chamber with external electrode and central electrode. External electrode is electrically connected to fixed contact. Chamber accommodates coil connected in series with external electrode and supplied with electric-arc discharge current to build up magnetic field and to move electric-arc discharge relative to motionless insulating gas. Central electrode is electrically connected to movable contact and passes through external electrode for shifting electric-arc discharge set up between these two electrodes. Electric field built up between these two electrodes is homogeneous to a great extent.
EFFECT: enhanced dielectric strength of switch; reduced probability of repeated initiation of electric-arc discharge.
7 cl, 3 dwg