Diagram of electric control as to power, and cooling diagram

FIELD: electricity.

SUBSTANCE: in the invention there implemented is diagram of electric control as to power at least by means of one power control device (201a-201c, 202a-202c) and at least one heat removal device (101a-101c). At that, at least one heat removal device (101a-101c) has thermal contact at least to one power control device (201a-201c, 202a-202c). Heat removal device (101a-101c) is switched to the specified constant electric potential (103a-103c) and is electrically insulated at least from one power control device (201a-201c, 202a-202c).

EFFECT: improving resistance to electric breakdown.

7 cl, 3 dwg

 

The present invention relates to electronic circuits electric power regulation, and in particular, to circuits located in the heat sink from the device power control power semiconductor elements such as, for example, thyristors, bipolar transistors (IGBT) and power MOSFETs (Power FET).

The interfaces between such power semiconductor elements and the rest of the scheme or the environment include electrical interfaces for electrical connection of power semiconductor elements and thermal interfaces, designed, in particular, for effective removal of heat generated during operation of the power semiconductor elements.

In particular, the present invention relates to electrical power control using power semiconductor elements, comprising at least one device power control and at least one device of the heat sink with one thermal contact with at least one power control unit.

Device for removal of heat generated in the device power control, are designed, in particular, with regard to prevent too great a difference of voltage between the electronic components and the mouth is the main heat sink, who are able to conduct heat and electricity.

Schemes for electric power control have a difference voltage between the individual circuit components such as the power semiconductor elements, between them and between the elements and the corresponding heat sink devices such as, for example, cooling elements, which can reach large values up to voltage breakdown.

In circuits according to the prior art power semiconductor elements are arranged on the heat sink devices connected to ground, and thus grounded or connected to the ground potential. Such traditional devices power control for regulation of three-phase alternating current and alternating voltage are with modules power control in a single device heat sink attached to the voltage of 0 volts, for example, or "earth" M, as shown in figure 1. For power control of three-phase alternating current or AC voltage, the circuit in figure 1 is divided into three parts. The diagram in figure 1 consists of three parts E1, E2 and E3 switching. Separate blocks E1, E2, and E3 switching in turn collected respectively serially connected power semiconductor elements T1a, E2a and T3a, T4a.

The capacitor C1 is discharged through the serial is inoe connection of two resistances R1 and R2, In this way both other devices E2, and E3 power control figure 1. All power semiconductor elements T1a, T2a, ... T3c, T4c for cooling are located on the device W0 heat sink.

This device W0 heat sink has good thermal conductivity and high electrical conductivity. In the operation of the scheme must ensure that the voltage difference between the points of connection of power semiconductor elements on the one hand and the device W0 heat sink on the other hand does not exceed the predefined maximum value of the potential difference, i.e. the breakdown voltage.

To resolve this problem it was proposed to provide a separate device, W1, W2, W3, W4, W5 and W6 of the heat sink for each pair of power semiconductor elements, as shown in figure 2. Although such a scheme eliminates the large potential difference between all power semiconductor elements and one device W0 heat sink, as shown in figure 1, however, disadvantageously increases the number of required circuit components.

Such a scheme can only be used for one-component or two-component circuits, which is disadvantageous. Thus, the potential of the respective devices W1-W6 heat sink is closed on the Central potential between the two power semiconductor and elements which limits the load voltage is approximately % of the voltage intermediate circuit ("link voltage" is the voltage of the chord).

In addition, a significant drawback is depicted in figure 2 scheme is that such a large number of heat sink devices, in this case 18 of heat sink devices for three-phase system (figure 2 shows the components of the scheme only for one phase), a high sensitivity to interference and expensive to manufacture.

In addition, it is impractical to install such devices heat sink modules in the form of H-bridges, as they do not have a common center point potential. Thus, the proposed solution is depicted in figure 2, is able to reduce the load on the voltage of the packs are single switches or packaging of double switches, however, are not suitable for new schemes, such as the modules in the form of H-bridges.

In EP 0933867 A1 presents a typical electronic circuit for electric power control, fig.2b from UR 0933867 A1 device (14) of the heat sink is electrically connected with the device (10) power control and electrical insulation (13) offered only between the device (14) of the heat sink and fins (0) of the heat sink, but not between the device (14) of the heat sink and the device (10) to regulate the output.

Another typical electronic circuit for electric maintains the of power described in EP 0802619 A1.

Thermal interfaces between the power semiconductor elements and the rest of the scheme or the environment dissipate heat. Additionally, there are electrical interfaces for electrical connection of power semiconductor elements. As a result, between electronic components and heat sink devices may experience potential difference.

The present invention is to create an effective device heat sink for module power control or regulating devices power for electric power control, having a small number of individual components with high resistance to electrical breakdown.

This problem is solved according to the invention using a schematic electrical power control with evidence under paragraph 1 of the claims. Other variants of the invention arise from the dependent claims.

The basic idea of the present invention is that there is a minimum number of devices of the heat sink, and a separate device heat sink attached to the given constant electric potential. Preferably specified constant potential is an intermediate potential between the two devices, power control, located on the same mod who Le power control.

The basic idea of the invention lies in the fact that there are only three units of heat for each phase, symmetrically connected to a corresponding center potential between the individual control devices of the power of one module. Thus, an optimum reduction of the load on the voltage between the power semiconductor elements and the corresponding heat sink devices on the one hand, the number of used components is reduced compared with the current level of technology.

In addition, this scheme allows to calculate schemes for electric power regulation in the form of a dual H-bridges. Here for driving generators, designed to 4.16 kV, apply standard 3.3 kV, and components.

Scheme in accordance with the invention for electrical power control has at least one power control unit and at least one heat sink having a thermal contact with at least one power control unit, and the heat sink device is connected with a specified constant electric potential. Preferably, at least one heat sink is electrically isolated from the at least one device power control. the ri can achieve advantages in further reduction of the load on the voltage between the power semiconductor elements and the corresponding heat sink devices.

In accordance with a preferred improved version of the present invention device power control are implemented by connecting at least two power semiconductor elements. This pair devices power control forms module power control. To regulate one phase it is advisable to use three modules power control.

Device to regulate the output of one module in an advantageous embodiment, are electrically connected to each other through a serial enable bit of resistance.

In accordance with another preferred improved version of the present invention specified constant electric potential, which is connected, at least one heat sink device, is implemented using a bit of resistance. When this bit of resistance are voltage dividers.

In accordance with another preferred improved version of the present invention specified constant electric potential, which is connected, at least one heat sink, is 1/4 of the voltage intermediate circuit diagrams for electrical regulation in relation to the potential of the body.

In accordance with another PR is pactically improved version of the present invention device power control include first and second mated with each other device power control so what form module power control, and the discharge resistance of the first and second devices power control switches specified constant electric potential at the center potential between the points of connection of the first and second devices power control.

Preferably, when different devices of different heat sink power modules are a different set of constant electrical potential independently from each other.

In accordance with another preferred improved version of the present invention, at least one additional heat sink is electrically connected to the connecting device, which electrically connects at least two power semiconductor element device power control.

Using this scheme solves the problem of the invention, namely to provide electric power regulation effective heat removal, and requires a small number of components and simultaneously achieve a high resistance to electrical breakdown.

The drawings show a further disclosed in detail an example of the version.

In the drawings shows:

Figure 1 is a conventional circuit diagram of the power control with a single device heat sink;

On Phi is .2 - the traditional scheme of electric power control with multiple floating heat sink devices; and

Figure 3 - power control unit electrically connected with the heat sink devices in accordance with the preferred embodiment of the present invention.

The same reference to the drawings depict the same or similar in function to the components or steps.

The following describes an example of the version of the present invention according to figure 3.

Figure 3 shows the scheme for electric power control for a single phase. For three-phase electric networks require a schema, which includes three phase circuit, as shown in figure 3. To illustrate schematic cooling in accordance with the invention for the circuit for the electrical power control is sufficient to consider a single phase according to figure 3.

The principle underlying the invention is based on the fact that it doesn't provide a single device heat sink attached to the housing potential, as shown in figure 1 with reference to the first conventional scheme, nor a large number of individual heat sink devices (two pieces on the module power control), which must be at the floating potential, as shown above in figure 2 another traditional the th scheme for electric power control.

As shown in figure 3, one phase diagrams for electric power control in accordance with the invention has three devices 101a, 101b and s heat sink. These three devices 101a, 101b, 101c heat sink is not connected to the potential of the housing 102 and are not free-floating. In addition, in accordance with the scheme according to figure 3 the basic idea of the invention lies in the fact that the devices 101a-101c of the heat sink close to the specified constant potential, i.e. the electric potentials 103a, 103b and 103c devices 101a, 101b and 101c, respectively, relative to the reference potential, i.e. the potential of the housing 102.

Diagram of power control consists of three separate identifiable blocks, i.e. modules 200A, 200b and 200C power control. Each of the modules 200 power control has first and second devices 201, 202 power control, cooled by means of respective devices 101a-101c of the heat sink.

Thus, the first and second devices 201a, 202a power control is located on the first device 101a heat sink and connected to it with the ability to conduct heat, the first and second devices 20lb, 202b power control is located on the second device 101b of the heat sink and connected to it with the ability to conduct heat, while the first and second device 201c or 202c regulation soy is inany with the third device C heat sink with the ability to conduct heat. In addition, appropriate devices 101a, 101b, 101c heat sink is electrically isolated from the respective devices 201a, 202a, 20lb, 202b, 201c, 202c power control, resulting the advantage that it is possible to further reduce the load on the voltage between the power semiconductor elements T1a, T2a, T3a, T4a, T1b, T2b, T3b, T4b, T1c, T2c., T3c, T4c respective devices 201a, 202a, 20lb, 202b, 201c, 202c power control and related devices 101a, 101b, 101c heat sink.

The first and second devices 201 and 202 of regulation of the power collected from the switching power semiconductor elements such as bipolar transistors with insulated gate), with the first connection device power control electrically connected to a common point, while the first and second nodes 104a and 105a connection connected through a series connection of two resistors R1, R2.

It should be noted that references to three separate identifiable module 200a, 200b, 200c power control provided by capital letters a, b, c to indicate ownership to the appropriate module power control.

In accordance with the invention, bit of resistance R1, R2, serving to discharge the respective capacitors (devices capacitors) C1, C2 form a voltage divider, with an average allocation at the point of coupling of the two resistances R1 and R2 or R3 and R4 or R5 and R6, respectively, forms a center potential, to which are attached respective devices 101a, 101b and 101c of the heat sink.

It is further assumed that the potential of the housing 102 is 0 C. In this case, the generated voltage of the intermediate circuit +E/2, which is supplied to the first node 104a connecting the first device 201a power control of the first module 200a power control, while the negative voltage of the intermediate circuit (-S/2) is supplied to the second node 105b of the second connection device 202b power control of the second module 200b power control.

The second connection unit 107c, electrically connecting at least two power semiconductor element T3c, T4c device 202 with power control, is denoted as the center point of the potential and electrically connected with the device 101c heat sink.

Due to the respective voltage dividers formed in the preferred example, the version of the present invention with equal resistances, i.e. R1=R2 and R3=R4, it turns out that the appropriate devices 101a, 101b of the heat sink are the electric potential 103a or 103b, equal to 1/4 of the voltage intermediate circuit (E/4) relative to the potential of the housing 102 (0).

Additionally, there are devices X1, X2 and X3 of the Desk reference potential, with the FDS is the substance of the relevant reference potentials of the power module 200a relative to the electric potential 103a device 101 of the heat sink.

Due to this, the task of the invention, namely the provision of high resistance to electrical breakdown while reducing the number of necessary components (in particular, devices 101a-101c heat sink).

Shown in figure 3 the layout of the control devices of power and heat sink devices may provide particular advantages when used in circuits with the following configuration topologies:

- three-tier switched fixed neutral (3LNPC);

- three-tier switched with active neutral (ANPC);

- 5-level topology ABB (ABB5L).

In particular, described by figure 3 wiring and cooling according to the above example, the version suitable for operation at medium voltage.

Although the present invention was described above using preferred example of execution, it is not limited to this example and may be modified in various ways.

Also named purposes, not restrict the use of the present invention.

The same reference to the drawings depict the same or similar in function to the components or steps.

101a-101cThe heat sink device
102Potential housing
103a-103cThe electric potential of the heat sink device
104a-104cThe first connection node
105a-105cThe second connection node
200a, 200b, 200cModule power control
201a-201cThe first power control unit
202a-202cThe second power control unit
EThe potential voltage of the intermediate circuit
C1-C2Capacitor
R1-R6Bit resistance
T1-T6Power semiconductor element
X1-X3The device registration reference potential

1. Scheme for electric power control, having: a) at least one device (a-s, a-s) power control; and (b) at least one device (101A-s) those whom looted, having thermal contact with at least one device (a-s, a-s) power control; characterized in that C) the unit (101A-s) heat sink attached to the given constant electric potential (103a-103c) and that d) at least one device (101A-s) heat sink is electrically isolated from the at least one device (a-s, a-s) power control.

2. The circuit according to claim 1, characterized in that the device (a-s, a-s) power control is formed by connecting at least two power semiconductor elements (T1-T4).

3. The circuit according to claim 1 or 2, characterized in that the device (a-s, a-s) power control electrically connected to each other through a serial enable bit of resistors (R1-R6).

4. The circuit according to claim 3, characterized in that given a constant electric potential (103A-C), which is connected at least one device (101A-s) heat sink, is set using bit of resistors (R1-R6).

5. The circuit according to claim 3, characterized in that given a constant electric potential (103A-C), which connected the device (101A-s) heat sink, voltage equal to j (E/4) of the intermediate circuit diagram for the electrical power control relative to potential is a (102) of the housing.

6. The circuit according to claim 3, characterized in that the device (a-s, a-s) power control include first and second mated with each other device (a-s, a-s) power control, and discharge resistance (R1-R6) of the first and second devices (a-s, a-s) power control commute specified constant electric potential (103A-C) at the center potential between the connection points of the first and second devices (a-s, a-s) power control.

7. The circuit according to claim 1, characterized in that different devices (101A-s) heat sink can join different predetermined constant electric potential (103A-C) independently from each other.



 

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1 cl, 1 dwg

FIELD: integrated circuit protective circuits including those of potential type.

SUBSTANCE: proposed circuit designed for protecting switching transistor that controls electromagnet or valve in control unit of motor-car forced idle run economizer upon occurrence of short circuit through common bus or reduction of load resistance below definite value has ten resistors 2, 3, 5, 9, 23, 26, 27, 32 - 34, seven transistors 1, 4, 10, 13, 22, 28, 30, two electronic switches 19, 29, two current supplies 7, 24, one reference voltage supply 31, one dynamic D flip-flop 1`1, one multiplexer 14, two delay circuits 16, 20, two matching units 18, 21, one regulated voltage supply 25, one power supply 6, thee input buses 12, 15, and 17 for passing initial setting signal, input signal, and clock pulses, respectively, and one output bus 8.

EFFECT: reduced number of leads in protective circuit of integrated type; ability of controlling its on-operation delay time.

1 cl, 1 dwg

FIELD: metallurgy.

SUBSTANCE: procedure for control over electric mode of ore-smelting furnace consists in measuring secondary phase voltage and current of electrodes, in additional recording ratio of active and reactive constituents of phase voltage, in determination of position of maximums of useful power by electrical resistance of active losses and reactive resistance of phase, in determination of power consuming and power saving fields relative to electrical modes, and in changing current of electrodes and voltage to eliminate deviations from maximal useful power.

EFFECT: raised efficiency of electrical furnace and reduced specific consumption of electrical power.

2 dwg, 3 tbl

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