Memory element on silicon on glass thin film structure

FIELD: physics.

SUBSTANCE: in a memory element which comprises a substrate with deposited thin layers of ceric and silicon oxide and metal electrodes for recording and deleting information is made from glass which is pre-cleaned with acetone and isopropyl alcohol, on which a ceric oxide layer is deposited at temperature higher than 600°C and thickness of more than 3 nm and a silicon film with thickness of 50-100 nm.

EFFECT: invention prolongs information storage period, simplifies the manufacturing technology and reduces production expenses.

4 cl, 4 dwg

 

Description of the invention:

The invention relates to semiconductor optoelectronics devices and memory devices.

You know the memory device [1], containing nanostructure channel source-drain with silicon-on-insulator, in which the electron lithography is formed a quantum dot made of polycrystalline silicon with dimensions of 40 nm and 240 nm. The recording is done by storing one-electron charge on the capacitance of the quantum dot under the influence of the gate voltage. When this capacity is determined by the thickness of the oxide layer and the geometry of the quantum dot. The disadvantages of this device are the complexity of the technological operations of the deposition of layers and etching, large enough memory cell, resulting in a low degree of integration. Also a disadvantage is the fragility of the device, due to the degradation of the oxide layer. Also known device [2] memory made in the form of a field-effect transistor according to the scheme of arrangement silicon-on-insulator with a channel width of 30 nm and a length of 1 μm. The silicon nanocrystals with an average size of about 8 nm and a surface density of 2-4×10 cm-2was nubilalis on silicon by vacuum-plasma deposition. The gate dielectric SiO2with a thickness of 30 nm was Nepalese vacuum-plasma deposition at low pressure. The disadvantages of this is th devices are complex and expensive technology of manufacturing the memory device, consisting in the deposition of various layers and a high level of noise fluctuations at small sizes the width of the channel, due to the random distribution on the surface of the deposited silicon nanocrystals.

The following well-known device is the device [3] memory at the array of nanocrystals of silicon area up to 100 mm2with the size of one element 90 nm. The density distribution of the nanocrystals on the surface is 1012cm-2. The length of the shutter was set to 120 nm when the thickness of the silicon oxide 5 nm.

The disadvantages of this device are low speed rewriting, due to silicon oxide, and fragility associated with the degradation of the dielectric due to diffusion of impurities and defects.

The following well-known device is the memory device [4], consisting of electrodes, the drain-source, gate, control the tunneling of electrons, a layer of nanocrystalline silicon embedded in the silicon oxide SiO2and the aluminum oxide layer Al2About3deposited by pyrolysis of molecules of trimethylaluminum on the surface of silicon oxide. This device has a relatively high density of nanocrystals and high degree of integration. Control over the surface density of nanocrystals and surface distribution is achieved through the use of chemical SV is ist the aluminum oxide layer, on which are grown silicon nanocrystals.

The disadvantages of this device are significant switching time caused by layers of dielectric SiO2and Al2About3. Another disadvantage is the effect of the Coulomb blockade in the process of writing in the memory element, as it is produced by tunneling electrons in the nanocrystals. Energy potential characteristics traps electrons vary the electron emission due to the effect of Fowler-Nordheim, which affects the dispersion of the threshold potential.

Closest to the claimed is a device [5], which includes a layer of 3.5 nm cerium oxide CEO2the silicon layer thickness of 2.5 nm, a thin layer of cerium oxide thickness of 3.5 nm, deposited on a substrate of monocrystalline silicon Si (111), subjected to a preliminary chemical treatment with acetone, isopropyl alcohol and a solution of hydrofluoric acid and covered with a buffer layer of Si with a thickness of 20 nm. The conservation of charge occurs in the thin silicon layer in the tunneling of charges through the barrier created by the dielectric layer of cerium oxide.

The main disadvantage of these devices is the low retention time of the charge due to the collapse of the state through the thin walls of the potential barrier created by cerium oxide. Another drawback is that the devices are technological complexity of manufacturing of the device, expensive manufacturing techniques, a relatively low degree of integration, due to the dimensions of the device.

The technical task of the invention is to increase the retention time information, as well as the degree of integration, reducing the size of the device, reducing technical complexity and cost of production when using technology.

The technical solution of the problem is a memory device that includes electrodes for recording information, a thin-film structure of silicon deposited on a thin layer of dielectric material duchessina cerium thickness from 3 nm to 10 nm, deposited on a substrate of glass. On the reverse side of the substrate directly under the structure of the silicon-ducharse cerium caused complanata spiral aluminum with metal findings used to heat the substrate, and removing the accumulated information. Aluminum spiral is applied by thermal evaporation of aluminum and masking of the substrate and has a thickness of about 1 μm.

Figure 1 shows the Raman spectra of the structure of the silicon oxide cerium deposited on the glass surface after pre-heating to 190°C With subsequent application of an electric field with different values of the strength of the electric field that implements the account information is promotion. Figure 2 presents the diagram of a memory device that includes a glass substrate 1 subjected to a preliminary chemical treatment with acetone, isopropyl alcohol and deionized water and etched in HF acid solution, and thermal heating in vacuum to a temperature exceeding 600°C with an applied consistently thin dielectric layers of cerium oxide 2 is thicker than 3 nm, and the silicon oxide or silicon nitride 3, and the silicon film 4 with a thickness of 50 nm, the metal electrodes are made of metals such as gold, indium, Nickel, cobalt, alloy MoW for recording and erasing information 5 and 6. The record is produced by feeding an electric pulse to the electrode 5. Erasing is applied an electric potential to the electrode 6.

Figure 3 shows a diagram of the memory device with the read information and the Erasure of optical radiation. The device includes a substrate made of glass 1, a thin layer 2, made of deposited material SEO2, a thin layer 3 of dielectric material SiO2or silicon nitride, polycrystalline silicon film 4, the electrode 5 made of a thin-film material is indium-tin-oxide (ITO), transparent to the radiation, and a metal electrode 6. The electric pulse applied to the electrode 6, will make C the written information in the memory device, and erase is performed using radiation penetrating from the side of the glass substrate and the transparent ITO layer. Also reading of information can be implemented using radiation using the reception of the optical signal of the fixed spectral component of Raman scattering, as shown in figure 1.

Figure 4 presents a diagram of a device that includes a substrate 1 made of glass Corning 1737 or Corning 7059, a thin layer 2 of a material of dielectric SEO2the layer of silicon oxide 3, the silicon film 4, the thin-film coil of the heater 5, made of platinum or aluminum, a layer of doped polycrystalline silicon 6, a metal electrode 7. Recording is carried out by feeding an electric pulse to one of the electrodes 7 and erasing information by heating the active layer to 190°C [6] using the heater 5. Reading of information is performed optically using laser radiation [6]. An example of specific performance may be a device including a heater, which is implemented at the application on the reverse side of the glass substrate a thin aluminum film with a thickness of 1 μm allowing the heated substrate to a temperature of 190°C, connecting with metal findings for the implementation of heat.

Sources of information the purpose

1. The memory device includes a substrate coated with a thin layer of cerium oxide and silicon and the metal electrodes for recording and erasing information, wherein the substrate is made of glass, subjected to pre-treatment with acetone, isopropyl alcohol, which is applied to the layer of cerium oxide at a temperature exceeding 600°C., a thickness of more than 3 nm and a film of silicon of a thickness of 50-100 nm.

2. The device according to claim 1, characterized in that, to increase the degree of integration, a thin film of silicon subjected to etching method beam lithography, and the silicon Islands are separate memory cells, and metal electrodes deposited directly on silicon.

3. The device according to claim 1, characterized in that the glass substrate from the back side of deposited aluminum film with a thickness of 1 μm, allowing the heated substrate to a temperature of 190°C, connecting with metal findings for the implementation of heat.

4. The device according to claim 1, characterized in that the memory device containing structure consisting of thin silicon films deposited on a thin layer of cerium oxide, contains optically transparent film conductive layer of ITO (indium-zinc-oxide), on which a layer of transparent silicon oxide, allowing the wasp is estolate erasing information using light from the radiation source.



 

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